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Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TK2R4A08QM TK2R4A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
XPN1300ANC XPN1300ANC ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
TK155U65Z TK155U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.155 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
TK6R9P08QM TK6R9P08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
XPW4R10ANB XPW4R10ANB ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L Visit Toshiba Electronic Devices & Storage Corporation
TK5R1A08QM TK5R1A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

transistor kc 2026 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor kc 2026

Abstract: LDL8 sms ic 1SV50 kc 2026 mboc 2N916 N429
Text: (See 6.2) MILITARY 8PECIFICATKJN SEMICONDUCTOR DEVICE, TRANSISTOR TYPE 2N916 I. SCOPE 1.1 This i , Small-signal forward -cur rent transfer ratio 3206 IC ■1 mA Vet * 5V f » 1 kc hie 40 200 ! Iç ■5 mA VcE * 5V f - 1 kc IC - 10 mA VCE - 15 V f « 100 mc ►10 5 >»fe bf. SO 3.0 250 I Small -signal short-1 circuit input | impedance 3201 IC - 5.0 mA VCE ' 5-° v f - 1 kc i i hie 2000 ohms ! , 5.0 V i - 1 kc hoc —— 125 mboc Subgroup 4 Output capacitano* -3296 VCB-5,0V Cob â


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PDF MIL-S-19500/27U KEL-S-19500/271 2N916 MIL-S-19500, transistor kc 2026 LDL8 sms ic 1SV50 kc 2026 mboc 2N916 N429
transistor kc 2026

Abstract: 2N665 kc 2026 MIL-T-195 Germanium itt
Text: DEVICE, TRANSISTOR , PNP, GERMANIUM, HIGH-POWER TYPE 2N665 This specification is mandatory for use by all , detailed requirements for a high-power, germanium, PNP, Transistor . 1.2 Physical dimensions. See figure 1 , Ade IB = -220 mAdc IC = -3 Ade VCE = -2 Vdc Ic^= -2 Ade Min Max 40 80 20 kc 20 Vdc -0.9 Vdc -1.5 2 , specified in MIL-S-19500 may be omitted from the body of the transistor at the option of the manufacturer , Ic = -300 mAdc R u Small-signal short-circuit 3301 VCE = -14 Vdc fhfe 20 — kc


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PDF MIL-S-19500/58D MIL-T-195 00/58C 2N665 MIL-S-19500, MIL-S-19500/58D MIL-S-19500 transistor kc 2026 2N665 kc 2026 Germanium itt
transistor kc 2026

Abstract: RNS-D Germanium Transistor M/transistor kc 2026
Text: SPECIFICATION SEMICONDUCTOR DEVICE; TRANSISTOR , PNP, GERMANIUM, SWITCHING ' TYPE 2NÏÎ20 This specification , transistor . 1. 2 Physical dimensions. See figure 1 (TO-41). 1. 3 Maximum ratings. • PP 1/ - v — TQ = , ) IC = -10 Ade U . 1 A J. fhfe vce » -2 vdc T«. _ e A = - J .n.Qu Vdc Vdc kc Min - 20 - â , . Transistor shall be of the design, construction, and physical dimensions shown on figure 1, 3.4 Performance , following markings specified in MÏL-S-195Ô0 may be omitted from the body of the transistor at the option


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PDF MIL-S-19500/68A MIL-T-19500/68 MIL-STD-750 MlL-S-iS500/68A MIL-S-19500. MIL-S-19500 transistor kc 2026 RNS-D Germanium Transistor M/transistor kc 2026
transistor kc 2026

Abstract: No abstract text available
Text: OUTLINES OF LEAD FORMED SMALL SIGNAL TRANSISTORS #A11 of Sanyo lead formed small signal transistor case , . Emitter B. Base Case Outline-[ 2026 ] unit: mm Gate II s Si Sourse D* Drain Case Outline-[2005A] unit , -51 S A N Y O îHP 14.0- 3.0 0.5 « r - k-c if, k-4.7D: Drain G: Gate Ss Source J.M IS


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PDF SC-43 transistor kc 2026
2N1016B

Abstract: 2N1016D 2N1016C transistor kc 2026 102A MC 3041 2N1016 kc 2026
Text: requirements for a high-power, NPN, silicon transistor . 1.2 Physical dimensions. See figure 1. 1.3 Maximum , = 5.0 Adc IB = 1.0 Adc fhfe ^ = 5.0 Adc VCE =4.0 Vdc eJ-C Vdc kc °c/w Min. 20 10 5 _ _ _ 20 , following marking specified in MIL-S-19500 may be omitted from the body of the transistor at the option of , connected to the mounting base. FIGURE 1. Outline dimensions of transistor types 2N1016B, 2N1016C and , cutoff frequency 3301 VCE = 4 Vdc; Iq = 5 Adc fhfe 20 . kc Subgroup 3 5 Collector to emitter


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PDF MIL-S-19500/102A MIL-S-19500/102 2N1016B, 2N1016C, 2N1016D 2N1016B 2N1016C 2N1016D MIL-S-19500, transistor kc 2026 102A MC 3041 2N1016 kc 2026
smd transistor marking EY

Abstract: SMD TRANSISTOR MARKING 3211 ahr TRANSISTOR smd transistor SMD S33 ahr11 SMD Transistor 1lm SMD TRANSISTOR MARKING 2Nx SMD TRANSISTOR MARKING 2D transistor kc 2026 dw11
Text: m&s.lTio2/16E U November 1964 WPFR5S7XNG MIL-B-195C+6D 27 Eecember 1*1 MILITASY SPECITICAT20N TRANSISTOR , GVN, SILICON TTPES 2N3.42, 2NX% , A:lD 2N343 i, mandatory for "8. of the DePart.mnt of Defame , 2026 Te.mperetwa noitltum - - - - - - lozl - - - . - , Physical 9.9i - 5 dimensions of transistor types 2N342, 2N342A, ond 2N343. % , vsig=0.2 (rms) f=l 22A VOC )i)oA f? ,Q :$TK.; 1~ + Kc SK t~ Figure3


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PDF lTio2/16E MIL-B-195C SPECITICAT20N 2N343 NIL-S-195Cr2 qF02ifi+ 2N342 411wII. 2N342 2N342A, smd transistor marking EY SMD TRANSISTOR MARKING 3211 ahr TRANSISTOR smd transistor SMD S33 ahr11 SMD Transistor 1lm SMD TRANSISTOR MARKING 2Nx SMD TRANSISTOR MARKING 2D transistor kc 2026 dw11
transistor kc 2026

Abstract: 2n2079 2N1099 GERMANIUM* 2n1099 2N2082 transistor sec 621 2n173 2N2079A MIL-S-19500 FOR POWER LINE TRANSISTOR kc 2026
Text: MIL-S-19500/340 17 December 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR , PNP , requirements for a high-power, germanium, PNP, transistor (see 6.3), 1.2 Physical dimensions. See figure 1 (TO , -12 Adc VCE = "6Vdc Iq = -5 Adc *B = -2 Adc Ic = -12 Adc VCB = -2Vdc Iç = -5 Adc kc Vdc Vdc Min , emitter voltage (static) base shorted. 3. 3 Design and construction. Transistor shall be of the design , MIL-S-19500 may be omitted from the body of the transistor at the option of the manufacturer; (a


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PDF MIL-S-19500/340 2N2079A Adc-19500/340 2N2079A 2N173 2N2079 2N277 2N2080, 2N2080A 2N278 transistor kc 2026 2n2079 2N1099 GERMANIUM* 2n1099 2N2082 transistor sec 621 MIL-S-19500 FOR POWER LINE TRANSISTOR kc 2026
OC 74 germanium transistor

Abstract: OC 140 germanium transistor pnp germanium transistor UJ33 2N396A Germanium Transistor kc 2026 TRANSISTOR SUBSTITUTION MIL-S-1950P
Text: SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR , PNP, GERMANIUM, LOW-POWER TYPE 2N39GA This specification 1b , specification covers the detail requirements for a low-power, PNP, germanium, transistor . 1.2 Physical , MIL-S-1950P. 3.3 Design, construction, and physical dimensions. Transistor shall be of the design , MIL-S-Î95ÔÔ may be omitted from the body of the transistor at the option of the manufacturer: (a , the seating piane of the transistor max dia ieads shaii be within ,007 (.18 mm) of their true iocotion


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PDF MEL-S-19500/64D MIL-S-19500/64C 2N39GA -i-100 MIL-S-19500 MIL-S-19500/64C. OC 74 germanium transistor OC 140 germanium transistor pnp germanium transistor UJ33 2N396A Germanium Transistor kc 2026 TRANSISTOR SUBSTITUTION MIL-S-1950P
TRANSISTOR 2n65s

Abstract: 2N65S 2N498 2N657 transistor 2N656 ad 303 transistor 2N856 2N497 2N656 transistor afr 22
Text: 20 March 1964 (See 6.3) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR , NPN, SILICON , dimensions. shown on figure 1. Transistor symbols, ad herein. definitions shall be of the , characteristics. Per formmce 3.5 fkfarki~. The follou'tng mwking specified the transistor at the option , upan 1 inch = 25.4 MM, FIGURE 2. Gage for lead and lab location for transistor types 2f1491, 214498 , 3011 Btas comi. D; Kc = 30 mAdc pulsed (see 4.4. 1) 2N497, 2N656 2N498, 2N657 Breakdown


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PDF MIL-s-19500/74E MIL-S-19500/74D 2N497, 2N498, 2N656, 2N657 2N656 TRANSISTOR 2n65s 2N65S 2N498 2N657 transistor 2N656 ad 303 transistor 2N856 2N497 2N656 transistor afr 22
2005 - ADP3338

Abstract: ADP3338AKCZ-5-R7 ADP3338AKCZ-5 ADP3338AKC capacitor 223
Text: TO JEDEC STANDARDS TO-261-AA Figure 23. 3-Lead Small Outline Transistor Package [SOT-223] ( KC , unique noninverting driver that drives the pass transistor , Q1. The use of this special noninverting , limiting the pass transistor 's base drive current. The maximum output current is limited to approximately , Option KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 Package Description 3-Lead SOT-223 3


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PDF ADP3338 OT-223 ADP3338 ADP3338AKCZ-5-R7 ADP3338AKCZ-5 ADP3338AKC capacitor 223
2N2586

Abstract: transistor KC 2
Text: TYPE 2N2S86 N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 6 5 2 9 8 7 , A U G U S T 1 9 6 , X S 0L2 · D A L L A S . T E X A S 7 S 22 2 TYPES 2N2586 N-P-N SILICON TRANSISTOR "electrical , - S 5 ° C na 80 120 40 150 600 0.7 0.9 0.5 f = 1 kc 4.5 18 V » kohm 360 h» Static , Output Capacitance h, h,. w Vc e = 5v, lc = = = = 1 mo, f = = = = 1 kc 100 /¿mho VCe = 5 v. lc 1 ma, f 1 kc 150 600 VC E = 5». lc 500 fj.a, f


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PDF 2N2S86 2N2586 transistor KC 2
transistor kc 2026

Abstract: 2N10160 2N1016C 2N1016B 2N1016D 2n1019
Text: , NPN, silicon transistor . 1.2 Physical dimensions. See figure 1. 1.3 Maximum ratings. Type pc y Tc  , 35 Vdc 2.5 kc 20 °-C/W 0.7 2. APPLICABLE DOCUMENTS 2,1 TTie following documentai — Issue in , of the transistor at the option of the manufacturer: (a) Country of origin. (b) Mamrfaeturer !s , shal! be intent!!* cofy.ectid to the mounting base. FIGURE 1. Outline dimensions of transistor types , €” — Subgroup 2 15 Solderability 2026 ftmlf acHncr icao a a = — -— Thermal shock


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PDF MIL-S-19500/102A MIL-S-19500/102 2N1016B, 2N1016C, 2N1016D 2N1016B -I-150 2N1016C 2N1016D MIL-S-19500/102A transistor kc 2026 2N10160 2n1019
2SC 9012

Abstract: 2N243 2N244 1961 30 TRANSISTOR lc 5012 m ScansUX7 9012 transistor transistor 2sc 9012
Text: Oval Welded Package mechanical data The transistor is in an oval welded package with glass-to-metal , supplied with the transistor . 4 All LEADS ARE INSULATED FROM THE CASE 0.020_Î - 0.545 ± 0.015t - 0.430  , kc Ie = —5 ma 2N243 2N244 -0.9 -0.961 -0.94 -0.97 -0.968 -0.989 hit AC Common-fas« Input Impedance V« = 10 v, f = 1 kc Ie = —5 ma AH 12 30 ohm hrb AC Common-Bos« Imrsi Voltage Transfer Ratio *c. = 10», f ~ 1 kc Ie = —5 ma AN 60x10' 300x10-* nal tests at 25"C case temparature Gp


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PDF 2N243, 2N244 60x10' 300x10-* 2SC 9012 2N243 1961 30 TRANSISTOR lc 5012 m ScansUX7 9012 transistor transistor 2sc 9012
germanium transistor pnp

Abstract: Germanium germanium pnp XAI02 pnp germanium transistor germanium pnp transistor siemens crt EDISON transistor germanium
Text: E D I S W A N \tr MAZDA XAI02 V R.F. TRANSISTOR Germanium PNP Junction Type _TENTATIVE_ GENERAL The XAI02 is a pnp junction type transistor suitable for use as a frequency changer and/or oscillator on the medium and long wave bands. The element of the transistor is hermetically sealed in a small can , A N \tr MAZDA XAI02 V R.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE Static Current , transistor . TYPICAL OPERATION (at 25°C. Ambient)—Self Oscillating Frequency Changer Battery Supply Voltage


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PDF XAI02 germanium transistor pnp Germanium germanium pnp pnp germanium transistor germanium pnp transistor siemens crt EDISON transistor germanium
2004 - ADP3338

Abstract: CODE KC SOT-223 ADP3338AKC-3-RL ADP3338AKC-3-RL7 ADP3338AKC-5-RL ADP3338AKC-5-RL7 ADP3338AKC
Text: Transistor Package [SOT-223] ( KC -3) Dimensions shown in millimeters ORDERING GUIDE Model ADP3338AKC , noninverting driver that drives the pass transistor , Q1. The use of this special noninverting driver enables , . OUTPUT CURRENT LIMIT The ADP3338 is short-circuit protected by limiting the pass transistor 's base , 12 Package Option KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 Package Description 3-Lead SOT-223 3-Lead SOT-223 3-Lead SOT-223 3-Lead SOT-223 3


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PDF ADP3338 C02050 OT-223 ADP3338 CODE KC SOT-223 ADP3338AKC-3-RL ADP3338AKC-3-RL7 ADP3338AKC-5-RL ADP3338AKC-5-RL7 ADP3338AKC
2001 - ADP3339AKCZ-5-R7

Abstract: ADP3339 ADP3339AKCZ-3-RL7 ADP33xx
Text: -Lead Small Outline Transistor Package [SOT-223] ( KC -3) Dimensions shown in millimeters ORDERING GUIDE , patented amplifier controls a new and unique noninverting driver that drives the pass transistor , Q1. The , the pass transistor 's base drive current. The maximum output current is limited to about 3 A. See , -Lead SOT-223 3-Lead SOT-223 3-Lead SOT-223 3-Lead SOT-223 Package Option 2 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 ADP3339 NOTES ©2001­2011 Analog Devices


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PDF ADP3339 OT-223 ADP3339AKCZ-5-R7 ADP3339 ADP3339AKCZ-3-RL7 ADP33xx
2001 - l1a sot-223

Abstract: ADP3339AKCZ-5-R7 TRANSISTOR 1f
Text: unique noninverting driver that drives the pass transistor , Q1. The use of this special noninverting , short-circuit protected by limiting the pass transistor 's base drive current. The maximum output current is , -261-AA WITH THE EXCEPTION TO LEAD WIDTH. 16° 10° Figure 23. 3-Lead Small Outline Transistor Package [SOT-223] ( KC -3) Dimensions shown in millimeters ORDERING GUIDE Model 1 ADP3339AKC-1.5-RL ADP3339AKCZ , -223 3-Lead SOT-223 3-Lead SOT-223 3-Lead SOT-223 3-Lead SOT-223 3-Lead SOT-223 Package Option 2 KC


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PDF OT-223 ADP3339 l1a sot-223 ADP3339AKCZ-5-R7 TRANSISTOR 1f
2n243

Abstract: 2N244 transistor all
Text: , D E C E M B E R 1 9 6 1 Oval Welded Package mechanical data The transistor is in an oval w , ately 1 gram. The mounting clip is hardw are supplied with the transistor . ALL LEADS ARE INSULATED , 10 v, f = 1 kc V V Va rcE(nt) h«, ohm hib Nrb Vc , = 10 v, f = 1 kc V c. = 10 v, f = 1 kc Ie = -5 n a lE = - 5 mo ohm fu n ctio n a l tests a t 2 5 °C case te m p e ra tu re Gp . Common-Emltfer Power Gain (See Circuit Below) Vc , = 28 v R, = loo a, f = 1 kc . lc = 20


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PDF 2N243, 2N244 2n243 transistor all
2004 - ADP3339AKC-5-RL7

Abstract: CODE KC SOT-223 ADP3339 ADP3339AKC-3-RL ADP3339AKC-3-RL7 ADP3339AKC-5-RL
Text: -261-AA Figure 23. 3-Lead Small Outline Transistor Package [SOT-223] ( KC -3) Dimensions shown in millimeters , The patented amplifier controls a new and unique noninverting driver that drives the pass transistor , limiting the pass transistor 's base drive current. The maximum output current is limited to about 3 A , respective owners. C02191­0­6/04(A) Rev. A | Page 12 of 12 Package Option KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 Package Description 3-Lead SOT-223 3


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PDF ADP3339 C02191 OT-223 ADP3339AKC-5-RL7 CODE KC SOT-223 ADP3339 ADP3339AKC-3-RL ADP3339AKC-3-RL7 ADP3339AKC-5-RL
2005 - Not Available

Abstract: No abstract text available
Text: -261-AA Figure 23. 3-Lead Small Outline Transistor Package [SOT-223] ( KC -3) Dimensions shown in millimeters , unique noninverting driver that drives the pass transistor , Q1. The use of this special noninverting , 3.3 3.3 3.3 3.3 5 5 5 5 Z = Pb-free part. Rev. B | Page 13 of 16 Package Option KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 Package Description 3-Lead SOT-223 3-Lead SOT


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PDF ADP3338 OT-223
TRANSISTOR 3F z

Abstract: germanium transistor pnp crt 1700 OC 44 germanium transistor Germanium Amplifier Germanium power Germanium Transistor TRANSISTOR C-111 mazda 3 pnp germanium transistor
Text: E D I S W A N MAZDA XAIOI I.F. TRANSISTOR Germanium PNP Junction Type _TENTATIVE GENERAL The XAIOI is a pnp junction type transistor suitable for use as an I.F. Amplifier at frequencies between 250 and 500 Kc /s. The element of the transistor is hermetically sealed in a small can. RATINGS—Absolute , , 1958 VALVE & CRT DIVISION Issue 2/4 SIEMENS EDISON SWAN LIMITED EDIS WAN MAZDA XAIOI I.F. TRANSISTOR , applicable over the useful frequency range of the transistor . TYPICAL OPERATION (at 25°C. Ambient)—I.F


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PDF
westinghouse transistors

Abstract: westinghouse power transistor westinghouse semiconductor WESTINGHOUSE transistor WESTINGHOUSE ELECTRIC 2N2228 westinghouse 2N3470 2N3470-73 2N2226
Text: the maximum rated power dissipation of the transistor with the base emitter forward biased. The , . BVcer and the am=l curve in the sustaining region. Vceo (sus). Each transistor is power tested within , kc rce (sat) 0.22 0.35 ohms hfe 100 360 Vbe (sat) 3.0 4.0 ' Vd c " fhfe 10 kc td+t, 4.5 , kc td+tr 5 jusec ts+tf 29 (i sec Typical Characteristics, 2N2226-29/2N3470-73 Series , €¢0?0 Terminal Lug) Terminol Lua (16-14 A WG H-.75DIO-H_ Wire) 2N2226-33 Power Transistor 2N3470-77 Power


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PDF Tcss75' 2N2226 2N3470 2N2226-29/2N3470-73 2N2230-33/2N3474-77 24UNF-2AThreads 2N2226-33 75DIO-H_ 2N3470-77 westinghouse transistors westinghouse power transistor westinghouse semiconductor WESTINGHOUSE transistor WESTINGHOUSE ELECTRIC 2N2228 westinghouse 2N3470-73
SN7501

Abstract: SN1220 SN7500 SN7510L SN7510 hearing aid amplifiers loop SN7502 hearing aid differential operational amplifier hearing-aid
Text: Solid Circuit* Semiconductor Networks1 Series 55 and Series 75 High-frequency Amplifiers High level of complexity — up to seven stages per bar ■Transistor fr of over 1Gc. ■Standard TO , (3 db from 1 Kc ref), Lower cut-off 20 cps Upper cut-off 10 kc Voltage gain at min volume , harmonic distor- tion, 1 kc 21% SNX1304 Optoelectronic Pulse Amplifier The SNX1304 consists of a , , 1 kc 5-0% 6


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PDF SN5500 SN7500 SN5500, SN7501 SN7502 SN7510 SN5510. SN7510L SN1220 SN1220 SN7501 SN7500 SN7510L SN7510 hearing aid amplifiers loop SN7502 hearing aid differential operational amplifier hearing-aid
2001 - transistor KC 2

Abstract: No abstract text available
Text: -Lead Small Outline Transistor Package [SOT-223] ( KC -3) Dimensions shown in millimeters ORDERING GUIDE , the pass transistor , Q1. The use of this special noninverting driver enables the frequency , of 12 Package Option 2 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC


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PDF ADP3339 OT-223 OT-223 transistor KC 2
2004 - ADP33xx

Abstract: C0219
Text: Transistor Package [SOT-223] ( KC -3) Dimensions shown in millimeters ORDERING GUIDE Model ADP3339AKC , unique noninverting driver that drives the pass transistor , Q1. The use of this special noninverting , short-circuit protected by limiting the pass transistor 's base drive current. The maximum output current is , Package Option KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 KC -3 Package Description 3


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PDF ADP3339 OT-223 t/linear-regulators/adp3339/products/prod 15-Sep-2010 ADP33xx C0219
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