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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor j8 Datasheets Context Search

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2012 - GaN hemt

Abstract: Gan hemt transistor
Text: MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Features GaN depletion mode HEMT microwave transistor Common source configuration , Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed , =250mA (pulsed), F=2.7-3.5 GHz, Pulse=300us, Duty=10%. 40W GaN Power Transistor Evaluation Fixture · North , Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Absolute Maximum Ratings Table (1


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PDF MAGX-002735-040L00 300us MAGX-002735-040L00 GaN hemt Gan hemt transistor
2014 - Not Available

Abstract: No abstract text available
Text: BLC8G27LS-160AV Power LDMOS transistor Rev. 2 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base , LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain1 , BLC8G27LS-160AV NXP Semiconductors Power LDMOS transistor Table 5. Thermal characteristics , reserved. 3 of 14 BLC8G27LS-160AV NXP Semiconductors Power LDMOS transistor Table 8. RF


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PDF BLC8G27LS-160AV
2009 - PH2729-65M

Abstract: No abstract text available
Text: PH2729-65M Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features · · · · · · · · · NPN silicon , contained herein without notice. PH2729-65M Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs , j8 .3 9.3 - j8 .9 2.8 7.3 - j6.7 9.0 - j8 .4 2.9 7.2 - j5.0 8.6 - j8 .0 2 , ) or information contained herein without notice. PH2729-65M Radar Pulsed Power Transistor 65W


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PDF PH2729-65M PH2729-65M
2007 - Not Available

Abstract: No abstract text available
Text: PH2729-65M Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features · · · · · · · · · NPN silicon microwave power transistors Common base configuration Broadband Class C , -65M Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun , () 7.8 - j8 .3 7.3 - j6.7 7.2 - j5.0 ZOF () 9.3 - j8 .9 9.0 - j8 .4 8.6 - j8 .0 2 ADVANCED: Data , -65M Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Test Fixture Circuit Dimensions


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PDF PH2729-65M
2002 - SMD TRANSISTOR j8

Abstract: transistor SMD J9 transistor smd j6 smd transistor J6 transistor SMD wm j13 SMD Transistor transistor wm WM8762-EV1M WM8762EV1 SMD Transistor PNP 3pin
Text: from the WM8762EV1 evaluation board, a transistor clamp circuit arrangement has been added to the , evaluation board, PNP transistor Q1 of the trigger circuit is held on until capacitor C9 is fully charged. With transistor Q1 held `on', NPN transistors Q3 and Q4 of the clamp circuits are also switched on , evaluation board, PNP transistor Q2 of the trigger circuit is switched on. In turn, transistors Q3 and Q4 of , 1 J7 J8 1 2 3 4 5 6 LNK1 H1 J10 1 3 5 7 9 11 1 2 4 6


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PDF WM8762 WM8762 24-bit, 192kHz WM8762. WM8762-EV1B WM8762-EV1M SMD TRANSISTOR j8 transistor SMD J9 transistor smd j6 smd transistor J6 transistor SMD wm j13 SMD Transistor transistor wm WM8762EV1 SMD Transistor PNP 3pin
2011 - 20 watts transistor s-band

Abstract: j948
Text: DESCRIPTION The 3135GN-170M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable , across the 3100 to 3500 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for S-Band Radar applications. It utilizes gold metallization and , , 300 s, 10% 3100 - 3500 MHz Transistor Impedance Information Impedance Data Freq (GHz) 3.1 3.2 3.3 3.4 3.5 Zs 5.02 ­ j9.48 4.48 ­ j9.28 3.92 ­ j8 .98 3.42 ­ j8 .64 3.00 ­ j8 .28 Zl 5.04 ­ j4.88 4.56 ­ j5


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PDF 3135GN-170M 3135GN 55-QP 20 watts transistor s-band j948
2007 - Not Available

Abstract: No abstract text available
Text: PH3134-11S Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty Features · · · · · · · · · NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization , -11S Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty RF Test Fixture Impedance F (GHz) 3.10 3.25 3.40 ZIF () 17.5 - j8 .5 15.0 - j8 .2 13.0 - j8 .0 ZOF () 90 + j37 58 + j7.0 30 + j14.5 M


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PDF PH3134-11S
2009 - fec 1140932

Abstract: SMD TRANSISTOR j8 AD5422 SMD TRANSISTOR j8 BLOCK DIAGRAM AD7321 ad5422brez OP27GSZ R25 3 pin smd transistor LK11 CY7C68013A
Text: controlled by two means: via the on-board connector ( J8 ) or via the USB port of a Windows® 2000, NT®, XP , VOUT IOUT INPUT/ OUTPUT CY7C68013A PIN HEADER ( J8 ) REFOUT AD5422 SELECT ADC I , by an external source via J8 . The link options on the evaluation board should be set for the , A A Inserted Inserted Inserted Inserted Inserted C A Inserted Inserted Connector J8 Pin Descriptions Table 2. Connector J8 Pin Configuration1 2 1 1 4 3 6 5 8 7 LK7 must be in


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PDF 16-Bit, EVAL-AD5422 AD5422 AD5422 16-bit outp88255 Devices/OP27GSZ EVAL-AD5422EBZ1 fec 1140932 SMD TRANSISTOR j8 SMD TRANSISTOR j8 BLOCK DIAGRAM AD7321 ad5422brez OP27GSZ R25 3 pin smd transistor LK11 CY7C68013A
2009 - PH2729-25M

Abstract: No abstract text available
Text: PH2729-25M Radar Pulsed Power Transistor 25W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features · · · · · · · · · NPN silicon , contained herein without notice. PH2729-25M Radar Pulsed Power Transistor 25W, 2.7-2.9 GHz, 100µs , j14.4 17.1 - j8 .7 2.8 35.0 - j16.3 15.0 - j8 .7 2.9 33.0 - j17.8 13.3 - j8 .3 2 , ) or information contained herein without notice. PH2729-25M Radar Pulsed Power Transistor 25W


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PDF PH2729-25M PH2729-25M
PH3134-9L

Abstract: No abstract text available
Text: PH3134-9L Radar Pulsed Power Transistor 9W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features · · · · · · · · · NPN silicon , . PH3134-9L Radar Pulsed Power Transistor 9W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 RF Test Fixture Impedance F (GHz) ZIF () ZOF () 3.10 17.5 - j8 .5 90 + j37 3.25 15.0 - j8 .2 58 + j7.0 3.40 13.0 - j8 .0 30 + j14.5 Test Fixture


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PDF PH3134-9L PH3134-9L
2007 - PH2731

Abstract: No abstract text available
Text: PH2731-20M Radar Pulsed Power Transistor 25W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features · · · · · · · · · NPN silicon microwave power transistors Common base configuration Broadband Class C , -20M Radar Pulsed Power Transistor 25W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun , ZIF () 38.0 - j14.4 35.0 - j16.3 33.0 - j17.8 ZOF () 17.1 - j8 .7 15.0 - j8 .7 13.3 - j8 .3 2 , -20M Radar Pulsed Power Transistor 25W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Test Fixture Circuit Dimensions


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PDF PH2731-20M PH2731
2007 - PH3134

Abstract: No abstract text available
Text: PH3134-10M Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty Features · · · · · · · · · NPN silicon microwave power transistors Common base configuration Broadband Class C , -10M Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul , () 17.5 - j8 .5 15.0 - j8 .2 13.0 - j8 .0 ZOF () 90 + j37 58 + j7.0 30 + j14.5 2 ADVANCED: Data Sheets , Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty Test Fixture Circuit Dimensions M/A-COM Products


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PDF PH3134-10M PH3134
2007 - Not Available

Abstract: No abstract text available
Text: PH3134-9L Radar Pulsed Power Transistor 9W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty Features · · · · · · · · · NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization , Transistor 9W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty RF Test Fixture Impedance F (GHz) 3.10 3.25 3.40 ZIF () 17.5 - j8 .5 15.0 - j8 .2 13.0 - j8 .0 ZOF () 90 + j37 58 + j7.0 30 + j14.5 M/A-COM Products Released


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PDF PH3134-9L
Electronic ballast 11W

Abstract: PH3134-11S
Text: PH3134-11S Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features · · · · · · · · · NPN silicon , . PH3134-11S Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 RF Test Fixture Impedance F (GHz) ZIF () ZOF () 3.10 17.5 - j8 .5 90 + j37 3.25 15.0 - j8 .2 58 + j7.0 3.40 13.0 - j8 .0 30 + j14.5 Test Fixture


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PDF PH3134-11S Electronic ballast 11W PH3134-11S
2009 - TRANSISTOR S1A 64 smd

Abstract: No abstract text available
Text: connection. The board can be controlled by two means, via the on-board connector ( J8 ) or via the USB port , PIN HEADER ( J8 ) REFOUT AD5422 Rev. C | Page 1 of 16 I TO V 08230-001 USB CONNECTOR , (default setup) or for control by an external source via J8 . Set the link options on the evaluation board , Connector J8 Pin Descriptions Table 2. Connector J8 Pin Configuration1 2 1 1 4 3 6 5 8 7 LK7 must be in Position B to enable the use of J8 . Table 3. Connector J8 Pin Descriptions


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PDF UG-442 AD5422 16-Bit, AD5422 16-bit UG08230-0-10/13 TRANSISTOR S1A 64 smd
2009 - PH3134-10M

Abstract: RF NPN POWER TRANSISTOR 3 GHZ 10W RF NPN POWER TRANSISTOR 3 GHZ J14-5 J-145
Text: PH3134-10M Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M/A-COM , contained herein without notice. PH3134-10M Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs , (GHz) RF Test Fixture Impedance F (GHz) ZIF () ZOF () 3.10 17.5 - j8 .5 90 + j37 3.25 15.0 - j8 .2 58 + j7.0 3.40 13.0 - j8 .0 30 + j14.5 2 ADVANCED: Data Sheets , information contained herein without notice. PH3134-10M Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz


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PDF PH3134-10M PH3134-10M RF NPN POWER TRANSISTOR 3 GHZ 10W RF NPN POWER TRANSISTOR 3 GHZ J14-5 J-145
2013 - j521

Abstract: No abstract text available
Text: , class AB GaN on SiC transistor capable of providing 11dB gain, 170 Watts of pulsed RF output power at , is a general purpose power transistor which can be used for any of the following applications , 170 Watts - 60 Volts, 300 s, 10% 3100 - 3500 MHz Transistor Impedance Information Impedance , .28 4.56 – j5.21 3.3 3.92 – j8 .98 4.08 – j5.36 3.4 3.42 – j8 .64 3.52 – j5.36 3.5 3.00 – j8 .28 3.02 – j5.24 Note: Z in is looking into the input circuit; Z Load is


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PDF 3135GN-170M 3135GN 55-QP 55-QP j521
1998 - 500 watts amplifier schematic diagram pcb layout

Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor smd transistor JJ m30 smd TRANSISTOR PCB Rogers RO4003 substrate SMD Transistor transistor RF 98 smd MRF184
Text: ) with an efficiency as high as possible, and a gain in the range of 30 dB. The final transistor chosen is the MRF184, a second generation LDMOS transistor from Motorola. The MRF184 is able to deliver 60 , overall efficiency) the MRF6522­10, a 10 W SMD transistor was chosen. This device is also a second generation LDMOS transistor from Motorola. Matching networks are done on an epoxy substrate (GI180 from , j2.20 6.05 ­ j8 .50 920 2.55 ­ j2.25 6.85 ­ j8 .96 2.18 ­ j1.89 5.76 ­ j8 .09 940


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PDF AN1670/D AN1670 500 watts amplifier schematic diagram pcb layout 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor smd transistor JJ m30 smd TRANSISTOR PCB Rogers RO4003 substrate SMD Transistor transistor RF 98 smd MRF184
1998 - MRF184

Abstract: transistor 955 MOTOROLA smd-transistor DATA BOOK MRF6522-10 AN1670 RO4003 SMD TRANSISTOR smd J225 Nippon capacitors
Text: as high as possible, and a gain in the range of 30 dB. The final transistor chosen is the MRF184, a second generation LDMOS transistor from Motorola. The MRF184 is able to deliver 60 W with more than 10 , ) the MRF6522­10, a 10 W SMD transistor was chosen. This device is also a second generation LDMOS transistor from Motorola. Matching networks are done on an epoxy substrate (GI180 from The first step in , j2.44 7.08 ­ j9.21 2.20 ­ j2.20 6.05 ­ j8 .50 920 2.55 ­ j2.25 6.85 ­ j8 .96 2.18


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PDF AN1670/D AN1670 MRF184 transistor 955 MOTOROLA smd-transistor DATA BOOK MRF6522-10 AN1670 RO4003 SMD TRANSISTOR smd J225 Nippon capacitors
2002 - transistor J11

Abstract: PH3135-65M J11 transistor radar 77 ghz
Text: Radar Pulsed Power Transistor , 65 Watts, 3.10-3.50 GHz, 100 µs Pulse, 10% Duty 8/9/02 PH3135-65M Rev. 1 Features Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Gold Metalization System , Test Conditions Radar Pulsed Power Transistor , 65 Watts, 3.10-3.50 GHz, 100µs Pulse, 10% Duty , ­ j8 .6 4.2 ­ j8 .8 3.50 TEST FIXTURE INPUT CIRCUIT 8.6 ­j6.0 4.7 ­j7.0 Test Fixture


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PDF PH3135-65M transistor J11 PH3135-65M J11 transistor radar 77 ghz
2011 - SMD transistor package code A64

Abstract: No abstract text available
Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 3 — 28 February 2011 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , reserved. 2 of 15 BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor 5 , reserved. 3 of 15 BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor


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PDF BLF6G27-10; BLF6G27-10G IS-95 ACPR885k ACPR1980k BLF6G27-10 SMD transistor package code A64
2010 - 10G SMD Transistor

Abstract: No abstract text available
Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 2 - 2 December 2010 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station , -10; BLF6G27-10G WiMAX power LDMOS transistor 1.3 Applications RF power amplifiers for base stations and , -10G WiMAX power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the , of 16 NXP Semiconductors BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor 7


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PDF BLF6G27-10; BLF6G27-10G ACPR885k ACPR1980k BLF6G27-10 10G SMD Transistor
2011 - RF35

Abstract: 10G SMD Transistor transistor 123
Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 3 - 28 February 2011 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station , MHz frequency range. BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor , -10G NXP Semiconductors WiMAX power LDMOS transistor 5. Thermal characteristics Table 5. Thermal , Semiconductors WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame


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PDF BLF6G27-10; BLF6G27-10G IS-95 ACPR885k ACPR1980k BLF6G27-10 RF35 10G SMD Transistor transistor 123
2009 - Tantalum Capacitor smd

Abstract: SMD TRANSISTOR j8 CY7C68013-56LFXC 1022247
Text: controlled by two means, via the on-board connector ( J8 ) or via the USB port of a Windows® 2000, NT®, XP , CONTROLLER CY7C68013 INPUT/ OUTPUT IOUT AD5420 SELECT PIN HEADER ( J8 ) ADC I TO V 08160-001 Figure 1 , , in Figure 5). Connector J81 Pin Descriptions Table 2. Connector J8 Pin Configuration 2 1 1 , (default setup) or for control by an external source via J8 . The link options on the evaluation board , of J8 . Table 3. Connector J8 Pin Descriptions Pin No. 1 2 3 4 5 6 7 8 9 10 Description SDO Not


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PDF 16-Bit, EVAL-AD5420 AD5420 16-bit PBSS8110Z Devices/OP27GSZ EVAL-AD5420EBZ1 Tantalum Capacitor smd SMD TRANSISTOR j8 CY7C68013-56LFXC 1022247
2004 - mosfet d408

Abstract: transistor d407 TRANSISTOR D405 mosfet D403 transistor tp122 D408 mosfet tp122 transistor D408 transistor D303-1 TRANSISTOR D400
Text: . . . . . . . . . . . . . . . . . . . . . . . . . . . 40-Pin Connector J8 . . . . . . . . . . . . . , . . . UNI-3 Connector J8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . Connector J8 Signal Descriptions. . . . . . . . . . . . . . . . . . , J8 . The other end of this cable goes to the embedded motion control board's 40-pin output connector , brake J4 40-Pin Ribbon Cable J8 140 - 325 Vdc 115 - 230 Vac J9 J6 Phase_C Phase_B 1 2


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