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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor j239 Datasheets Context Search

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2007 - transistor A113

Abstract: a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
Text: RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET Designed for , Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain , - Source Voltage Gate- Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage Temperature , , Junction to Case, Single Transistor Symbol RJC Value 12 Unit °C/W Table 3. Moisture Sensitivity Level , Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system) Gps IRL P1dB No Degradation In


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PDF MRF9002NT1 MRF9002R2 MRF9002R2 transistor A113 a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
2004 - J133 mosfet transistor

Abstract: transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor RO4350 MRF9002R2 A113 mosfet j133 MOTOROLA TRANSISTOR 935
Text: TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array , Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain and Insertion , Transistor @ TC = 25°C PD 4 Watts Storage Temperature Range Tstg - 65 to +150 °C , CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case, Single Transistor NOTE - CAUTION - MOS , dBm ON CHARACTERISTICS Freescale Semiconductor, Inc. FUNCTIONAL TESTS (Per Transistor in


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PDF MRF9002R2/D MRF9002R2 J133 mosfet transistor transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor RO4350 MRF9002R2 A113 mosfet j133 MOTOROLA TRANSISTOR 935
2006 - MRF9002NR2

Abstract: RO4350 J104 J158
Text: Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial , Transistor Power Gain - 18 dB Efficiency - 50% · Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 , -0.5, +65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Dissipation Per Transistor , . Thermal Characteristics Characteristic Thermal Resistance, Junction to Case, Single Transistor Table , Semiconductor ARCHIVE INFORMATION Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm


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PDF MRF9002NR2 PFP-16 MRF9002NR2 RO4350 J104 J158
2006 - MRF9002NR2

Abstract: No abstract text available
Text: Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial , Transistor Power Gain — 18 dB Efficiency — 50% • Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 , Per Transistor @ TC = 25°C PD 4 W Storage Temperature Range Tstg -ā65 to +150 , , Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 , Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system) VGS1 + C7 Z1 Z4 Z5


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PDF MRF9002NR2 PFP-16 MRF9002NR2
2001 - J133 mosfet transistor

Abstract: transistor 955 MOTOROLA
Text: MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL , equipment. · Guaranteed Performance at 960 MHz, 26 Volts Output Power ­ 2 Watts Per Transistor Power Gain ­ , . MAXIMUM RATINGS Rating Drain­Source Voltage Gate­Source Voltage Total Dissipation Per Transistor @ TC = , Resistance, Junction to Case, Single Transistor Symbol RJC Max 12 Unit °C/W NOTE ­ CAUTION ­ MOS devices , ) VDS(on) 2.4 3 - - - 0.3 4 5 - Vdc Vdc Vdc FUNCTIONAL TESTS (Per Transistor in Motorola Test


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PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D J133 mosfet transistor transistor 955 MOTOROLA
2005 - power transistor unit j122

Abstract: MRF9002NR2
Text: Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET MRF9002NR2 1000 MHz, 2 W , Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain and Insertion Phase Flatness · , Rating Drain-Source Voltage Gate-Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage , Resistance, Junction to Case, Single Transistor Symbol RJC Value 12 Unit °C/W Table 3. Moisture , - - 0.3 4 5 - Vdc Vdc Vdc Symbol Min Typ Max Unit Functional Tests (Per Transistor in Freescale


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PDF MRF9002NR2 MRF9002NR2 power transistor unit j122
2006 - MRF9002NR2

Abstract: A113 RO4350 mosfet j133 j239 J122 MARKING
Text: Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET MRF9002NR2 Designed , 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · , Voltage VGS - 0.5, + 15 Vdc Total Dissipation Per Transistor @ TC = 25°C PD 4 W , Characteristic Thermal Resistance, Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level , Characteristic On Characteristics Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system


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PDF MRF9002NR2 MRF9002NR2 A113 RO4350 mosfet j133 j239 J122 MARKING
2005 - J133 mosfet transistor

Abstract: transistor j239 J122 MARKING ON SEMICONDUCTOR J122 J133 transistor MRF9002NR2 transistor marking z9 z14 b marking J239 TRANSISTOR J239 marking
Text: lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array N , Performance at 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - , Gate-Source Voltage VGS - 0.5, + 15 Vdc Total Dissipation Per Transistor @ TC = 25°C PD 4 , Characteristic Thermal Resistance, Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level , dBm Characteristic On Characteristics Functional Tests (Per Transistor in Freescale Test


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PDF MRF9002R2 MRF9002NR2 PFP-16 J133 mosfet transistor transistor j239 J122 MARKING ON SEMICONDUCTOR J122 J133 transistor transistor marking z9 z14 b marking J239 TRANSISTOR J239 marking
2005 - MRF9002NR2

Abstract: No abstract text available
Text: lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array N , Performance at 960 MHz, 26 Volts Output Power — 2 Watts Per Transistor Power Gain — 18 dB Efficiency  , Transistor @ TC = 25°C PD 4 W Storage Temperature Range Tstg - 65 to +150 °C , Transistor Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22-A113, IPC/JEDEC J-STD , Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system) Common-Source Amplifier Power


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PDF MRF9002R2 MRF9002NR2 PFP-16
2005 - ON SEMICONDUCTOR J122

Abstract: MRF9002NR2
Text: POWER MOSFET RF Power Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET , Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for , Drain-Source Voltage Gate-Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage Temperature Range , to Case, Single Transistor Symbol RJC Value 12 Unit °C/W Table 3. Moisture Sensitivity Level Test , Vdc Vdc Vdc Symbol Min Typ Max Unit Functional Tests (Per Transistor in Freescale Test Fixture, 50


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PDF MRF9002NR2 PFP-16 MRF9002R2 MRF9002R2 ON SEMICONDUCTOR J122
2002 - motorola MOSFET 935

Abstract: J133 mosfet transistor transistor 955 MOTOROLA sps transistor
Text: MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL , station equipment. · Guaranteed Performance at 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor , . MAXIMUM RATINGS Rating Drain­Source Voltage Gate­Source Voltage Total Dissipation Per Transistor @ TC = , Resistance, Junction to Case, Single Transistor Symbol RJC Max 12 Unit °C/W NOTE ­ CAUTION ­ MOS devices , ) VDS(on) 2.4 3 - - - 0.3 4 5 - Vdc Vdc Vdc FUNCTIONAL TESTS (Per Transistor in Motorola Test


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PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola MOSFET 935 J133 mosfet transistor transistor 955 MOTOROLA sps transistor
2006 - MRF9002NR2

Abstract: marking us capacitor pf l1 marking Z4 A113 RO4350 transistor A113
Text: Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Capable of Handling 10 , VGS - 0.5, + 15 Vdc Total Dissipation Per Transistor @ TC = 25°C PD 4 W Storage , Resistance, Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level Test Methodology Per , Freescale Semiconductor LAST ORDER 4 APR 09 LAST SHIP 3 OCT 09 RF Power Field Effect Transistor Array , 37 - dBm Characteristic Functional Tests (Per Transistor in Freescale Test Fixture, 50


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PDF MRF9002NR2 MRF9002NR2 marking us capacitor pf l1 marking Z4 A113 RO4350 transistor A113
2005 - J133 mosfet transistor

Abstract: ON SEMICONDUCTOR J122 MRF9002R2 transistor a113 a113 transistor marking transistor RF
Text: POWER MOSFET RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET , Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for , Drain- Source Voltage Gate- Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage , Resistance, Junction to Case, Single Transistor Symbol RJC Value 12 Unit °C/W Table 3. Moisture , Vdc Symbol Min Typ Max Unit Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm


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PDF MRF9002NT1 MRF9002R2 MRF9002R2 J133 mosfet transistor ON SEMICONDUCTOR J122 transistor a113 a113 transistor marking transistor RF
2004 - motorola rf Power Transistor

Abstract: No abstract text available
Text: Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N - , Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain , Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Characteristic Thermal Resistance, Junction to Case, Single Transistor , (th) VGS(Q) VDS(on) 2.4 3 - - - 0.3 4 5 - Vdc Vdc Vdc FUNCTIONAL TESTS (Per Transistor in


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PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola rf Power Transistor
2002 - J239

Abstract: motorola J122 J104 MOSFET j122 mosfet A113 motorola rf Power Transistor mosfet j133 RO4350 MRF9002R2 J239 mosfet transistor
Text: Sub­Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N­Channel Enhancement­Mode , Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain and Insertion Phase Flatness , Vdc Gate­Source Voltage VGS ­0.5, +15 Vdc Total Dissipation Per Transistor @ TC = 25 , Characteristic Thermal Resistance, Junction to Case, Single Transistor MOISTURE SENSITIVITY LEVEL Test , CHARACTERISTICS FUNCTIONAL TESTS (Per Transistor in Motorola Test Fixture, 50 ohm system) Common­Source


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PDF MRF9002R2/D MRF9002R2 J239 motorola J122 J104 MOSFET j122 mosfet A113 motorola rf Power Transistor mosfet j133 RO4350 MRF9002R2 J239 mosfet transistor
2008 - AN1955

Abstract: MRF6V10250HSR3 CRCW251220R NI-780S
Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 NOT RECOMMENDED FOR NEW DESIGN N-Channel Enhancement-Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle , NOT RECOMMENDED FOR NEW DESIGN RF Power Field Effect Transistor MRF6V10250HSR3 1 Table 3 , .04 4.3 - j2.72 1030 2.39 - j2.23 5.66 - j2.42 1090 3.26 - j3.72 5.85 - j2.39


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PDF MRF6V10250HS MRF6V10250HSR3 AN1955 MRF6V10250HSR3 CRCW251220R NI-780S
2008 - A114

Abstract: A115 AN1955 C101 JESD22 MRF6V10250HSR3 C1447-0 nh TRANSISTOR
Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 1, 6/2008 NOT RECOMMENDED FOR NEW DESIGN N - Channel Enhancement - Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty , Transistor MRF6V10250HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class B , .23 5.66 - j2.42 1090 3.26 - j3.72 5.85 - j2.39 Zsource = Test circuit impedance as measured


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PDF MRF6V10250HS MRF6V10250HSR3 A114 A115 AN1955 C101 JESD22 MRF6V10250HSR3 C1447-0 nh TRANSISTOR
2008 - ATC100B3R3

Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 N-Channel Enhancement-Mode Lateral MOSFET RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed , 11 LAST SHIP 30 JUN 12 RF Power Field Effect Transistor LIFETIME BUY Table 3. ESD , j2.42 5.85 - j2.39 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test


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PDF MRF6V10250HS MRF6V10250HSR3 MRF6V10250HS ATC100B3R3
2008 - ATC100B4R7CT500XT

Abstract: j239 transistor equivalent table c101 mosfet mttf transistor j239 A115 C101 JESD22 ATC100B241JT500XT MRF6V10250HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 0, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications. · Typical Pulsed Performance: VDD , .42 1090 3.26 - j3.72 5.85 - j2.39 Zsource = Test circuit impedance as measured from gate to


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PDF MRF6V10250HS MRF6V10250HSR3 ATC100B4R7CT500XT j239 transistor equivalent table c101 mosfet mttf transistor j239 A115 C101 JESD22 ATC100B241JT500XT MRF6V10250HSR3
Not Available

Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications. ! Typical Pulsed Performance: VDD = 50 Volts, IDQ = 250 mA, Pout = 250 Watts Peak , - j2.42 1090 3.26 - j3.72 5.85 - j2.39 Zsource = Test circuit impedance as measured


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PDF MRF6V10250HS MRF6V10250HSR3
2012 - RO6006

Abstract: TRANSISTOR c105 capacitor 6800 uf r812 R809 PTVA101K02EV 011022 1030-1090MHz SK101M100ST
Text: .49 ZSource [W] 1.41 ­ j1.62 1.76 ­ j2.12 2.34 ­ j2.39 3.21 ­ j1.47 2.37 ­ j0.84 58.10 645.65 61.90 16.46 , Ohm Resistor, 2000 Ohm Transistor Voltage regulator Potentiometer, 2k ohm TDK Corporation ATC TDK


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PDF PTVA101K02EV PTVA101K02EV H-36275-4 RO6006 TRANSISTOR c105 capacitor 6800 uf r812 R809 011022 1030-1090MHz SK101M100ST
transistor j241

Abstract: transistor j239 J241 transistor
Text: BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev. 2 - 10 December 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video , frequency range NXP Semiconductors BLF8G22LS-200(G)V Power LDMOS transistor 2. Pinning , BLF8G22LS-200(G)V Power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Rth(j-c) Thermal , BLF8G22LS-200(G)V Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance


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PDF BLF8G22LS-200V; BLF8G22LS-200GV BLF8G22LS-200V 8G22LS-200GV transistor j241 transistor j239 J241 transistor
2006 - 100WPEP

Abstract: MRF374A MRF374 J352 j310 vishay C14A C13B C12B C12A RO3010
Text: Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications , PEP f MHz Zsource Zload 845 3.33 - j2.42 4.56 - j2.86 860 3.03 - j2.39


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PDF MRF374A 100WPEP MRF374A MRF374 J352 j310 vishay C14A C13B C12B C12A RO3010
2011 - CGHV1J006D

Abstract: transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor
Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree's CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown , + j13.2 7.28 + j9.64 6.25 + j7.2 5.4 + j5.2 4.9 + j3.54 4.67 + j2.39 4 + j1.21 3.56 + j0.155 3.2 ­


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PDF CGHV1J006D CGHV1J006D 18GHz E7703 transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor
2010 - transistor j241

Abstract: ATC100B2R7BT500XT mrf8s9120 AN1955 J239 mosfet transistor J181 j353 j239 transistor ATC100B0R8BT500XT ATC100B390J
Text: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. · Typical Single-Carrier W-CDMA , P1dB 1.45 - j2.02 1.28 - j2.39 940 P1dB 1.78 - j1.81 1.35 - j2.74 960 P1dB


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PDF MRF8S9120N MRF8S9120NR3 transistor j241 ATC100B2R7BT500XT mrf8s9120 AN1955 J239 mosfet transistor J181 j353 j239 transistor ATC100B0R8BT500XT ATC100B390J
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