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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor j 13009-2 Datasheets Context Search

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fc1a-cla

Abstract: PFA-1A54A PF2-CLA PFA-1A51 cable PFA-1A11 PFA-1A51 FC1A-C1A1E relay 12v 220v i/o FC1A-C2A1E relay 12v dc
Text: , Transistor Outputs 1. WindLDR programming software- see page J -86 for details. With 4 Timers 8 Time , replaces hard-wired systems · 8 inputs, 6 outputs · DC inputs, relay or transistor outputs · Expansion , Approved File No. E951113332321 J The CPU base unit supplies power to the micro-expansion units , or (408) 747-0550, Western Canada: (888) 578-9988 or Eastern Canada (888) 317-4332 J , Transistor Output Source Input Sink Input Source Input/Sink Output Sink Input/Source Output Source


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PDF CP11T CP12/13 fc1a-cla PFA-1A54A PF2-CLA PFA-1A51 cable PFA-1A11 PFA-1A51 FC1A-C1A1E relay 12v 220v i/o FC1A-C2A1E relay 12v dc
transistor K52

Abstract: germanium transistor pnp pnp germanium transistor GERMANIUM SMALL SIGNAL PNP TRANSISTORS mullard germanium mullard 160 germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS mazda 3 germanium Power Transistor
Text: Resistance [V( j (rms)/I| j (rms)] of high Transistor Pair (ohms) 1400 Maximum Base to Base Input Drive Power of , Power Output Common Emitter Circuits. High lb Transistor Pair i j 1 , Transistor Pair j , XCIOI AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type E D I S W A N MAZDA TENTATIVE GENERAL The XCIOI is a germanium pnp junction type transistor suitable for use in Audio Output stages. The element


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cpm1-cif11

Abstract: omron CPM1-CIF01 rs 232 manual omron srt2-id16 SRT2-ROC16 OMRON MANUAL CPM1-CIF01 transistor C3306 omron SRT2-OD16-1 SRT2-ID16T-1 CPM1-CIF01 PIN OUT 16 to 4 encoder
Text: SRM1-C02-V2 J COMPOBUS/S I/O SLAVE TERMINALS Product Transistor remote I/O terminal blocks SRT2 , Slave 32 Slaves max. 1 SRM1 SRM1 Ordering Information J CPU/MASTER UNITS Product , supply (See Note 1.) Standards (See Note 2.) Part number 4 transistor input (NPN) 4 transistor inputs (PNP) 8 transistor inputs (NPN) 8 transistor inputs (PNP) 16 transistor inputs (NPN) 16 transistor inputs (PNP) Multiple UL, CSA, CE SRT2-ID04 SRT2-ID04-1 SRT2-ID08 SRT2-ID08


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PDF RS-232C 1-800-55-OMRON cpm1-cif11 omron CPM1-CIF01 rs 232 manual omron srt2-id16 SRT2-ROC16 OMRON MANUAL CPM1-CIF01 transistor C3306 omron SRT2-OD16-1 SRT2-ID16T-1 CPM1-CIF01 PIN OUT 16 to 4 encoder
A-69J

Abstract: A69J
Text: 500 J Leads 1% 1% % .35 A-78J 100MW 1 or 2 Transistor to Balanced Line , Audio Transformers TR JAMagneTek.Ine R A D O -U T A Division of J SERIES / low le v e l h ig h fid e lity ¡SKe The flexibility of Triad J Series transformers permits amplifiers to exceed , -15J 10MW Balanced Line or Mike A-52J 10OMW Line or Transistor to Line or Transistor A-56J 100MW Line or Transistor to Voice Coil A-79J 200MW A-58J 100MW D.C. Resistance


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PDF CT/150Â 100MW A-69J A69J
TRANSISTOR 3F z

Abstract: germanium transistor pnp crt 1700 OC 44 germanium transistor pnp germanium transistor mazda 3 TRANSISTOR C-111 Germanium Transistor Germanium power Germanium Amplifier
Text: E D I S W A N MAZDA XAIOI I.F. TRANSISTOR Germanium PNP Junction Type _TENTATIVE GENERAL The XAIOI is a pnp junction type transistor suitable for use as an I.F. Amplifier at frequencies between 250 and 500 Kc/s. The element of the transistor is hermetically sealed in a small can. RATINGS—Absolute , , 1958 VALVE & CRT DIVISION Issue 2/4 SIEMENS EDISON SWAN LIMITED EDIS WAN MAZDA XAIOI I.F. TRANSISTOR , applicable over the useful frequency range of the transistor . TYPICAL OPERATION (at 25°C. Ambient)—I.F


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smd dual darlington transistor

Abstract: TRANSISTOR SMD 10p Theta-J theta-j solid Transistor z1 smd smd ss 5 transistor DARLINGTON SMD TRANSISTOR LDA201 LDA210 LDA211
Text: t!j'tp|?|>ubsystems Watt|ourJâëters f. I" - ì i,'"! I «-—»J H i I! :> j PrO^ess^C.ùntraj , % 50 1.0 J General Ratings: (at 25° C.) Input: Power Dissipation per stage Forward Current (Cont , Transistor Output Vce = 10V;f= 1 MHz. Vcc=10V; If= 0 mA. Pkg. Coupled Characteristics: Min Max Units Notes , LDA211 Pkg. H 3 3 z: 3 3 LDA411 z: : Pkg. J CLARE (C P) / SOLID STATE BSE D ■2144^04 0000110 3 , -25 0 25 50 °c Normalized Current Ratio vs. Temperature Single Transistor Output 2.0 1.5 ■o a


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PDF 21M4TQ4 E76270 681-73Q0 DSCS881115/25K smd dual darlington transistor TRANSISTOR SMD 10p Theta-J theta-j solid Transistor z1 smd smd ss 5 transistor DARLINGTON SMD TRANSISTOR LDA201 LDA210 LDA211
Not Available

Abstract: No abstract text available
Text: transistor LLE16350X X J * o 4 50 mA p|Nw 0 9 10 20 30 Po ut W VCE= 24 V , transistor Preliminary specification File under Discrete Semiconductors, SC15 October 1992 Philips , NPN silicon planar epitaxial microwave power transistor LLE16350X FEATURES DESCRIPTION , emitter efficiency NPN silicon planar epitaxial microwave power transistor in a FO-229 glued cap , transistor LIMITING VALUES (n accordance with the Absolute Maximum System (IE C 134). MIN. CONDITIONS


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PDF LLE16350X bbS3T31 003301b 33Q2M
transistor C711

Abstract: BY239 LLE16350X diode BY239 c711 BDT91 SC15 LTSB
Text: transistor L (W) A J * X>" 0 mA— mA mA_ y VCE = 24V;f = 1.65 GHz Fig.6 Load , power transistor Preliminary specification File under Discrete Semiconductors, SC15 October 1992 , transistor LLE16350X FEATURES • Diffused emitter ballasting resistors providing excellent current , NPN silicon planar epitaxial microwave power transistor in a FO-229 glued cap metal ceramic flange , planar epitaxial ^^^ 6350X microwave power transistor LIMITING VALUES In accordance with the Absolute


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PDF LLE16350X 003301b 0D33G214 transistor C711 BY239 LLE16350X diode BY239 c711 BDT91 SC15 LTSB
built R TRANSISTOR N2

Abstract: No abstract text available
Text: output transistor capable of producing 10mA of output current. With an external boost transistor , uses an external output transistor . Any desired current limiter value can be set using an external a r lii i f + i r t n iy r A r ir + r k r i Im j u w v i For a system reset, it has a low-voltage , transistor )/300 mA (when urrent boost transistor connected) 400mA +0.15V -0.18V 600mA (External transistor , current boost transistor , connect the base of a PNP transistor to this pin. No external transistor is


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PDF TA8044F 400mA 4700pF 2200pF 6-P-225-1 built R TRANSISTOR N2
C200HS-CN220-EU pinout

Abstract: pinout CS1W-CN118 omron plc CQM1H CPU 51 troubleshooting PLC to pc Communication cables pin diagram omron CS1W-CN118 c200h-cn320-eu cs1w-cn226 CPM2C-20CDR-D omron plc CPU 41 rs232 pin configuration CIF01
Text: COM OUT COM 11 CPM2C CPM2C J TRANSISTOR OUTPUTS (NPN OR PNP) For CPU Units and , ) J CPM2C MODULES WITH CONNECTORS ATTACHED Modules with Relay Outputs Modules with Transistor , CPM2C CPM2C J PULSE OUTPUTS ( TRANSISTOR OUTPUT MODELS ONLY) The CPM2C has two pulse outputs. You , Modules 1 CPM2C CPM2C Ordering Information J CPU UNITS Internal clock Part number PNP , -20CDT1C-D Yes CPU Units with transistor outputs Output points 12 points CPU Units with relay


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PDF RS-232C/peripheral 1-800-55-OMRON C200HS-CN220-EU pinout pinout CS1W-CN118 omron plc CQM1H CPU 51 troubleshooting PLC to pc Communication cables pin diagram omron CS1W-CN118 c200h-cn320-eu cs1w-cn226 CPM2C-20CDR-D omron plc CPU 41 rs232 pin configuration CIF01
1995 - 11040-3

Abstract: lm78s40 2N6051 AN-711 C1995 LM741 lm741 application
Text: Inductor Design Y Transistor and Diode Selection Y Capacitor Selection Y EMI Y Design Equations , transistor by varying its operating point within the linear region or between the two operating extremes cutoff and saturation When the pass transistor is operated at a point between cutoff and saturation the regulator circuit is referred to as linear voltage regulator When the pass transistor is operated only at , efficient modes of operation In the cutoff mode there is a large voltage across the transistor but little


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PDF 20-3A 11040-3 lm78s40 2N6051 AN-711 C1995 LM741 lm741 application
d421

Abstract: XS2F-D421-GC0-A XS2F-D421-DC0-A E3S-CD68
Text: E3S-CD68/CD63 J WIRING DIAGRAM Label Sensor Output configuration Mode selector Output transistor , Operation J TIMING CHART Output configuration Mode selector Output transistor NPN Light-ON , Ordering Information J E3S-CD68/CD63 LABEL DETECTION SENSOR Connections Supply voltage pp y g , , screwdriver and M4 hex bolts. Cable must be ordered separately. J ACCESSORIES (ORDER SEPARATELY , E3S-CD68/CD63 E3S-CD68/CD63 Engineering Data J OPERATING RANGE (TYPICAL) Operating position Y (mm


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PDF E3S-CD68/63 E3S-CD68/CD63 1-800-55-OMRON E000-E3-0 d421 XS2F-D421-GC0-A XS2F-D421-DC0-A E3S-CD68
rt 108 power transistor

Abstract: phonograph preamplifiers transistor j 108 transistor outline X packing transistor arrays 5v pa3046 low noise Darlington Transistor UA3026HM MA3036 jA3018
Text: | or J = 1 mA, 'C3 + 'C4 ) 10 1000 12.6 4540 - V hfe hie hoe hre For Each Input Transistor (Q-| or Q3 , €¢ |jA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS GENERAL DESCRIPTION — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed on a , maximum flexibility in circuit design for applications from dc to 120 MHz. Excellent transistor and diode , FAIRCHILD LIC TRANSISTOR AND DIODE ARRAYS • juA30XX SERIES MA3036 • MATCHED TRANSISTOR


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PDF jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 rt 108 power transistor phonograph preamplifiers transistor j 108 transistor outline X packing transistor arrays 5v pa3046 low noise Darlington Transistor UA3026HM jA3018
STK6100

Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP b3E ]> ■7c ?D7b n 0010*^2 4^5 M T S A J Ordering , transistor is M O SFET for low power loss (h alf that of a bipolar transistor ) and reliable handling of high-output current (lash current). • Variation in V refl level causes the driver transistor to switch to , No 4290-1/11 SANYO SEMICONDUCTOR CORP b3E » ■7^^707^ QGIOISB 321 « T S A J , Vref, “ H " voltage v ,u V ref,„ GND side transistor not in PW M Vref, “ L ” voltige


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PDF EN4290 STK6103 STK6103 STK6100
STK6100

Abstract: tJ01 STK6103 transistor CD 910 MOSFET for low power 6v DC motor 1000 rpm
Text: Hall input ° _ J " 1 L "L Drive transistor gate signal _ J L "1 L_ F J-L J-L START/STOP T H J CW/CCWT L J BRAKE fHJ Hall input 12 11 ^ 7 Drive transistor gate signal — A I— F J Fig , motors • Air conditioner fan motors Features • The output driver transistor is MOSFET for low power loss (half that of a bipolar transistor ) and reliable handling of high-output current (rush current). • Variation in Vrefj level causes the driver transistor to switch to PWM drive for


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PDF EN4290A STK6103 STK6103 STK6100 tJ01 transistor CD 910 MOSFET for low power 6v DC motor 1000 rpm
OMRON H7ec manual

Abstract: TRANSISTOR 12 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ EN50082-2 transistor npn high speed switching transistor CR NPN H7EC-N-B omron H7EC 7-segment diagram and application note push switch
Text: -segment LCD without backlight H: 7-segment LCD with backlight 3. Case Color B: Black J ACCESSORIES , DC voltage input models (-H models) are available with a backlight. J RATINGS Item H7EC-NV-B , max. Minimum open impedance: 750 k min. 30 Hz or 1 kHz (Selectable) H7EC H7EC J , panel mounting bracket. 3 Approx. 60 g H7EC H7EC Nomenclature J TOTAL COUNTER Front , panel. Operation J OPERATING MODES H7EC Total Counter Incrementing Operation (Up) Reset Count


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PDF 4/IP66 1-800-55-OMRON OMRON H7ec manual TRANSISTOR 12 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ EN50082-2 transistor npn high speed switching transistor CR NPN H7EC-N-B omron H7EC 7-segment diagram and application note push switch
1999 - Not Available

Abstract: No abstract text available
Text: Ordering Information J E3S-CD68/CD63 LABEL DETECTION SENSOR Connections Supply voltage y g , , screwdriver and M4 hex bolts. Cable must be ordered separately. J ACCESSORIES (ORDER SEPARATELY , interference. 2 E3S-CD68/CD63 E3S-CD68/CD63 Engineering Data J OPERATING RANGE (TYPICAL , Sensing distance (mm) J EXCESS GAIN VS. SET DISTANCE (TYPICAL) E3S-CD68/CD63 (Horizontal) Excess , E3S-CD68/CD63 E3S-CD68/CD63 Dimensions Unit: mm (inch) J E3S-CD68 75 (2.95) 57 (2.24) (A


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PDF E3S-CD68/63 E3S-CD68/CD63 E3S-CD68/CD63 1-800-55-OMRON
transistor w1d

Abstract: W1D TRANSISTOR 40/W1D TRANSISTOR
Text: interrii RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data S h eet J u ly 1999 F ile N u m b e r , MOSFETs These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor , resistors, zener diodes and a power MOS transistor . The current limiting of these devices allow it to be , . VGS . PD .ESD - T j , T s tg . t l . , . T j = 2 5 °C to 1 5 0 °C . Electrical Specifications PARAMETER Tc = 25°C, Unless Otherwise


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PDF RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE transistor w1d W1D TRANSISTOR 40/W1D TRANSISTOR
OMRON H7et manual

Abstract: H7ET-N-B two digit 7-segment display with decimal 7-segment diagram and application note GHz PNP transistor omron proximity sensor single digit 7 Segment Display diagram POWER SUPPLY WITH 7 SEGMENT DISPLAY circuit diagram water level sensor EN50082-2
Text: Replaceable battery H New black case H H H H H H Ordering Information J TIME COUNTERS Time range , H7ET-NFV-B H7ET-NFV1-B No-voltage input 7-segment LCD H7ET-N-B H7ET-N1-B J MODEL NUMBER , -segment LCD with backlight J ACCESSORIES (ORDER SEPARATELY) Item Part number Replacement battery , 45 mm Y92F-75 24.8 mm × 48.8 mm Y92F-77B 1 H7ET H7ET Specifications J GENERAL , -37) can be ordered separately. J RATINGS Item H7ET-NVj-B, H7ET-NVj-BH H7ET-NFVj-B Supply


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PDF 3999d23 999h59m59s 9999h59 4/IP66 1-800-55-OMRON OMRON H7et manual H7ET-N-B two digit 7-segment display with decimal 7-segment diagram and application note GHz PNP transistor omron proximity sensor single digit 7 Segment Display diagram POWER SUPPLY WITH 7 SEGMENT DISPLAY circuit diagram water level sensor EN50082-2
K3NX-VD1A

Abstract: Z4LA-D1030 z4la-l10 omron z4la K3NX-VD1C K3TS-SD11B K3TS-SD12B equivalent Z4LA-1030-05 omron k3ts CQM1-LSE01
Text: distance 10 mm beam width Ordering Information J SENSOR Sensing method Sensing distance , -1030 Z4LA-1030-05 J ACCESSORIES (ORDER SEPARATELY) Description Part number 90 degrees side-view adapter for emitter or receiver Z4LA-F1 J LINEAR OUTPUT VS. LIGHT INTERRUPTION SQUARE Z4LA , generates a 1 VDC output. Light interruption square (mm2) 145 Z4LA Z4LA Specifications J , (red LED) (self-diagnostic output) Receiver: Discrimination output indicator (red LED) J


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PDF Z49-SF1 1-800-55-OMRON K3NX-VD1A Z4LA-D1030 z4la-l10 omron z4la K3NX-VD1C K3TS-SD11B K3TS-SD12B equivalent Z4LA-1030-05 omron k3ts CQM1-LSE01
Not Available

Abstract: No abstract text available
Text: output transistor capable of producing 10mA of output current. W ith an external boost transistor , uses an external output transistor . Any desired current limiter value can be set using an external , 10mA (built-in transistor ) /300 mA (when urrent boost transistor connected) • • Output , 5.1V • Output current 600mA (External transistor ) • Current limiter Variable , current boost 3 4 OUT1 transistor , connect the base of a PNP transistor to this pin. No


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PDF TA8044F 400mA SSOP16-P-225-1
2003 - all transistor book

Abstract: mcd760 free transistor equivalent book free transistor equivalent book download MCD761 all transistor data sheet book download free download transistor and ic equivalent data transistor data book free transistor number code book FREE BLS3135-50
Text: transistor Product specification Supersedes data of 1999 Aug 16 2003 Apr 15 Philips Semiconductors Product specification Microwave power transistor FEATURES · Suitable for short and medium pulse , applications in the 3.1 to 3.5 GHz band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in , transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO , Product specification Microwave power transistor Typical impedance FREQUENCY (GHZ) 3.1 3.2 3.3 3.4 3.5


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PDF M3D259 BLS3135-50 BLS3135-50 OT422A BLS313550 all transistor book mcd760 free transistor equivalent book free transistor equivalent book download MCD761 all transistor data sheet book download free download transistor and ic equivalent data transistor data book free transistor number code book FREE
1998 - Widlar

Abstract: lm12 op amp 150W TRANSISTOR AUDIO AMPLIFIER 800W TRANSISTOR npn AN-446B Three-Five 446B Widlar AN-21 sourcing darlington array 600W TRANSISTOR AUDIO AMPLIFIER
Text: National Semiconductor Application Note 446B April 1998 Robert J . Widlar Apartado Postal 541 , regulators, amplifiers cannot use three-terminal transistor packages. But limited output power and the , transistor structures used for regulators [8]­[10] are not suited topologically or structurally for , develop a linear power transistor that uses polysilicon resistors for ballasting, avoiding problems due , transistor to operate near its theoretical safe-area limits for both transient and r1987 IEEE. Reprinted


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10C1

Abstract: d 331 TRANSISTOR equivalent copper permittivity VC60 LLE18300X IEC134 BY239 BDT91 330E 229 transistor npn
Text: microwave power transistor Preliminary specification File under Discrete Semiconductors, SC 15 October , specification NPN silicon planar epitaxial LLE18300X microwave power transistor FEATURES • Diffused , transistor in a FO-229 glued cap metal ceramic flange package, wflh emitter connected to flange , epitaxial . F1 microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum System , epitaxial microwave power transistor THERMAL CHARACTERISTICS LLE18300X SYMBOL PARAMETER CONDITIONS MAX


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PDF LLE18300X DD3f033 10C1 d 331 TRANSISTOR equivalent copper permittivity VC60 LLE18300X IEC134 BY239 BDT91 330E 229 transistor npn
2007 - marking A06

Abstract: marking A06 amplifier KTMC1060SC MMBT3904T MMBT3906T transistor j25
Text: MMBT3906T PNP Epitaxial Silicon Transistor Features C · General purpose amplifier transistor . E · Ultra-Small Surface Mount Package for all types. B · Suitable for general switching & , Corporation MMBT3906T Rev. 1.0.0 www.fairchildsemi.com 1 MMBT3906T - PNP Epitaxial Silicon Transistor , T J =125 C o T J =75 C Ic=10*Ib Collector-Emitter Voltage,[mV] Vce=1V o T J =25 C Current Gain o T J =-25 C 100 o T J =125 C o T J =75 C o T J =25 C 100 o T J


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PDF MMBT3906T OT-523F MMBT3904T MMBT3906T marking A06 marking A06 amplifier KTMC1060SC transistor j25
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