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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
SCT3030AR SCT3030AR ECAD Model ROHM Semiconductor 650V, 70A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3060AR SCT3060AR ECAD Model ROHM Semiconductor 650V, 39A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3105KL SCT3105KL ECAD Model ROHM Semiconductor 1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3017AL SCT3017AL ECAD Model ROHM Semiconductor 650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3030KL SCT3030KL ECAD Model ROHM Semiconductor 1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3080AL SCT3080AL ECAD Model ROHM Semiconductor 650V, 30A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

transistor itt BC212 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - BC214C

Abstract: Transistor BC212A BC212A BC214B Transistor BC212 BC214 pin out Transistor BC214c BC214C equivalent BC213A transistor bc212 sheet
Text: Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC212 , BC212A, BC212B BC213, BC213A , Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL BC212 , Sheet Page 1 of 4 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC212 , BC212A, BC212B BC213 , Emitter Voltage BC212 50 BC213, BC214 30 VCBO IC=10µA.IE=0 Collector Base Voltage BC212 60 BC213 , IEBO VEB=4V, IC=0 BC212 , BC213 BC214 BC212 BC213 BC214 BC212 , BC214 BC213 Collector


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PDF BC212, BC212A, BC212B BC213, BC213A, BC213B, BC213C BC214, BC214B, BC214C BC214C Transistor BC212A BC212A BC214B Transistor BC212 BC214 pin out Transistor BC214c BC214C equivalent BC213A transistor bc212 sheet
2001 - equivalent of transistor bc212

Abstract: bc213 equivalent bc212 replacement equivalent of transistor bc214 transistor bc214 2n441 BC237 BC212 FR4 dielectric constant 4.6 BC214 alternative
Text: BASE 1 EMITTER BC212 ,B BC213 BC214 MAXIMUM RATINGS Rating Collector ­ Emitter Voltage Collector , Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC212 ­50 ­60 BC213 ­30 ­45 , ) Emitter­Base Leakage Current (VEB = ­4.0 V, IC = 0) BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 Symbol V(BR)CEO Min ­50 ­30 ­30 ­60 ­45 ­45 ­5 ­5 ­5 - - - - - - Typ , Small­Signal Transistors, FETs and Diodes Device Data BC212 ,B BC213 BC214 ELECTRICAL CHARACTERISTICS (TA


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PDF BC212 BC213 BC214 BC212 BC213 226AA) Ju218A MSC1621T1 MSC2404 equivalent of transistor bc212 bc213 equivalent bc212 replacement equivalent of transistor bc214 transistor bc214 2n441 BC237 FR4 dielectric constant 4.6 BC214 alternative
transistor Comparison Tables

Abstract: pin configuration npn transistor BC557 BC647 BC548 or BC558B TRANSISTOR To92 transistor motorola BC647B BC319 BC182 BC547 pin configuration NPN transistor BC548B pin configuration NPN transistor BC548
Text: . In each of the following tables, the major specifications of the TO-92 transistor are given for easy , . BC182* BC212 * 50 625 100 120 460 200 10 CBE BC237 BC307 45 625 100 120 460 200 10 CBE BC238 BC308 25


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PDF BC556 BC546A BC556A BC546B BC556B BC547 BC557 BC547A BC557A BC647B transistor Comparison Tables pin configuration npn transistor BC557 BC647 BC548 or BC558B TRANSISTOR To92 transistor motorola BC319 BC182 BC547 pin configuration NPN transistor BC548B pin configuration NPN transistor BC548
BC212

Abstract: TRANSISTOR BC 413 Transistor BC212 TRANSISTOR BC 212
Text: DISCRETE POWER & SIGNAL TECHNOLOGIES BC212 SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO . . . . 50V (Min) hFE . . . . . . 60 (Min) @ VCE=5V, IC= 2mA 1 TEMPERATURES Storage Temperature Operating Junction Temperature E 3 2 Leadformed to TO-18 configuration -55 Degrees C to 150 Degrees C 150 Degrees C POWER DISSIPATION (NOTES 2 & 3) Total Device Dissipation at Ta = 25 Deg C B 0.135 - 0.145 (3.429 - 3.683) 3 C ABSOLUTE MAXIMUM RATINGS (NOTE 1) 2 1


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PDF BC212 200uA, 200Hz Pr6897 BC212 TRANSISTOR BC 413 Transistor BC212 TRANSISTOR BC 212
cv 2663

Abstract: transistor k 3728 u2403 tact switch 6-pin SI 3105 A 4 pin TACT SWITCH BC212 BD135 TLHR5400 U2403B
Text: high current requirement, an external transistor is recommended in series with the battery. To protect , > 250 mA To fulfill requirements of higher charge current an external booster transistor can be used , level is reached, the transistor , t3, is switched on. If t3 is switched on and there is current flow , , R, I T < BC212 lx^j mounted on heatsink T D, I R, BC212 R„ LEDI red TLHR5400 i


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PDF u2403b U2403B 1N4148, BZX85C10, 08-NOV-99 cv 2663 transistor k 3728 u2403 tact switch 6-pin SI 3105 A 4 pin TACT SWITCH BC212 BD135 TLHR5400
110 3cg motorola

Abstract: pin configuration transistor 110 3CG BC647 110 3CG transistor 110 3CG bc459c pin configuration transistor BC549 transistor bc237 - bc337 bc459 pin configuration NPN transistor BC560
Text: . In each of the following tables, the major specifications of the TO-92 transistor are given for easy , . BC182* BC212 * 50 625 100 120 460 200 10 CBE BC237 BC307 45 625 100 120 460 200 10 CBE BC238 BC308 25


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PDF BC337 BC327 BC338 BC328 BC445 BC446 BC447 BC448 BC449 BC450 110 3cg motorola pin configuration transistor 110 3CG BC647 110 3CG transistor 110 3CG bc459c pin configuration transistor BC549 transistor bc237 - bc337 bc459 pin configuration NPN transistor BC560
2001 - transistor k 3728

Abstract: 2663 transistor 1N4148 BC212 BD135 BYW52 BZX85C10 TLHG5400 TLHR5400 U2403B
Text: requirement, an external transistor is recommended in series with the battery. To protect the IC against , booster transistor can be used (see figure 8). As the temperature cannot be monitored in this case a heat , + + reached, the transistor , T3, is switched on. If T3 is switched on and there is current , BC212 ­ ­ D1 R1 green TLHG5400 R2 Ich R8 LED2 D2 8 BC212 mounted T1


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PDF U2403B U2403B D-74025 12-Jan-01 transistor k 3728 2663 transistor 1N4148 BC212 BD135 BYW52 BZX85C10 TLHG5400 TLHR5400
telefunken U 226 B phase control ic

Abstract: telefunken ha 680 SI 3105 A CIRCUIT DIAGRAM OF BD135 1N4148 BC212 BD135 BZX85C10 TLHG5400 TLHR5400
Text: high current requirement, an external transistor is recommended in series with the battery. To protect , requirements of higher charge current an external booster transistor can be used (see figure 7). As the , temperature monitoring function. When the temperature level is reached, the transistor , T3, is switched on , DC-Supply 30 V 1 ^ R, R, 96 11707 "1=1- < BC212 L^J V I mounted on heatsink T D, I R, ch BC212 R, LEDI red ^ TLHR5400 £ R. BD135 R R, LED2 Ï N D2Ï I green TLHG5400 Ro


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PDF u2403b U2403B D-74025 20-Mar-96 telefunken U 226 B phase control ic telefunken ha 680 SI 3105 A CIRCUIT DIAGRAM OF BD135 1N4148 BC212 BD135 BZX85C10 TLHG5400 TLHR5400
telefunken ta 750

Abstract: telefunken ha 680 4 pin TACT SWITCH SI 3105 A 1N4148 BC212 BZX85C10 TLHG5400 TLHR5400 U2403B
Text: high current requirement, an external transistor is recommended in series with the battery. To protect , of higher charge current an external booster transistor can be used (see figure 7). As the , temperature level is V reached, the transistor , T3, is switched on. If T3 is switched on and there is , —— NTC I I ! rVT I R, R, I- I mounted on heatsink T Ri !ch BC212 R„ LEDI red ^ , ^^ BC212 Figure 8. U2403B for higher supply voltage up to 30 V with integrated temperature monitoring No


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PDF u2403b U2403B D-74025 20-Mar-96 telefunken ta 750 telefunken ha 680 4 pin TACT SWITCH SI 3105 A 1N4148 BC212 BZX85C10 TLHG5400 TLHR5400
1998 - transistor k 3728

Abstract: 4 pin TACT SWITCH 9639 max CIRCUIT DIAGRAM OF BD135 TACT Switch with LED "Temperature Switch" 1n4148 v4 BYW52 equivalent of transistor bc212 ICH 8
Text: requirement, an external transistor is recommended in series with the battery. To protect the IC against , charge current an external booster transistor can be used (see figure 7). As the temperature cannot be , monitoring function. When the temperature level is + + reached, the transistor , T3, is switched on , 96 11707 R 11 DC-Supply 30 V R 10 NTC T3 BC212 ­ ­ D1 R1 green TLHG5400 R2 Ich R8 LED2 D2 8 BC212 mounted T1 on T2 heatsink 7 6 5


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PDF U2403B U2403B D-74025 transistor k 3728 4 pin TACT SWITCH 9639 max CIRCUIT DIAGRAM OF BD135 TACT Switch with LED "Temperature Switch" 1n4148 v4 BYW52 equivalent of transistor bc212 ICH 8
Not Available

Abstract: No abstract text available
Text: at Pins 2, 3 and 4. For high current requirement, an external transistor is recommended in series , an exter­ nal booster transistor can be used (see figure 7). As the temperature cannot be , reached, the transistor , T 3 , is switched on. If T 3 is switched on and there is current flow into Pin 5 , < / I T T I D, R, ? i BC212 green TLHG5400 R0 LED2 D0 mounted on heatsink T LEDI i Rt red TLHR5400 BC212 U2403B BD135 R R, T L ED I normal


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PDF U2403B U2403B D-74025 l-Jun-99
1N4148 D-2

Abstract: No abstract text available
Text: . For high current requirement, an external transistor is recommended in series with the battery. To , , reduced trickle charge To fulfill requirements of higher charge current an exter nal booster transistor , level is o - W IRELESS « fiC reached, the transistor , T 3, is switched on. If T 3 is switched on and there is current flow into Pin 5, normal charge is terminated. + Battery T3 BC212 DC-Supply 30 V 1 green TLHG5400 LED2 < I V I, R, i BC212 mounted on heatsink T. 5 'J


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PDF U2403B U2403B 1N4148, BZX85C10. 12-Jan-01 1N4148 D-2
kq 330

Abstract: transistor k 3728 1N4148 D-2
Text: Pins 2, 3 and 4. For high current requirement, an external transistor is recommended in series with the , higher charge current an exter nal booster transistor can be used (see figure 7). As the temperature , n d u c t o r s reached, the transistor , T3, is switched on. If T 3 is switched on and there is , -1 I I iC r < D, BC212 I I LXjj R, Rch I R0 r -* LED2 D, green TLHG5400 I U2403B BC212 mounted on heatsink T. BD135 LEDI red TLHR5400 l J > R, R, ) f R


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PDF U2403B U2403B D-74025 29-Apr-98 kq 330 transistor k 3728 1N4148 D-2
telefunken 2663

Abstract: BC212 CIRCUIT DIAGRAM OF BD135 U2403B 1N4148 STM 6 pin TACT SWITCH 1N4148 BD135 Transistor BC212 BZX85C10
Text: requirement, an external transistor is recommended in series with the battery. To protect the IC against , Ich C1 R1 To fulfill requirements of higher charge current an external booster transistor can , reached, the transistor , T3, is switched on. If T3 is switched on and there is current flow into Pin 5 , BC212 ­ ­ D1 R1 green TLHG5400 R2 Ich R8 LED2 D2 8 BC212 mounted T1


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PDF U2403B U2403B D-74025 20-Mar-96 telefunken 2663 BC212 CIRCUIT DIAGRAM OF BD135 1N4148 STM 6 pin TACT SWITCH 1N4148 BD135 Transistor BC212 BZX85C10
1999 - transistor k 3728

Abstract: S4660 BZX85 BC212
Text: requirement, an external transistor is recommended in series with the battery. To protect the IC against high , external booster transistor can be used (see figure 8). As the temperature cannot be monitored in this case , . When the temperature level is reached, the transistor , T3, is switched on. If T3 is switched on and , NTC R 10 T3 BC212 ­ ­ R1 Ich R2 LED2 D2 BC212 mounted T1 on T heatsink 2 BD135 LED1 red


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PDF U2403B U2403B D-74025 08-Nov-99 transistor k 3728 S4660 BZX85 BC212
1997 - telefunken stm

Abstract: TRANSISTOR BC 136 4 pin TACT SWITCH TACT Switch with LED U2403B 1n4148 v4 NTC 6,8K 1N4148 BC 1098 BD135
Text: requirement, an external transistor is recommended in series with the battery. To protect the IC against , Ich C1 R1 To fulfill requirements of higher charge current an external booster transistor can , reached, the transistor , T3, is switched on. If T3 is switched on and there is current flow into Pin 5 , BC212 ­ ­ D1 R1 green TLHG5400 R2 Ich R8 LED2 D2 8 BC212 mounted T1


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PDF U2403B U2403B D-74025 20-Mar-96 telefunken stm TRANSISTOR BC 136 4 pin TACT SWITCH TACT Switch with LED 1n4148 v4 NTC 6,8K 1N4148 BC 1098 BD135
1999 - transistor BD 240

Abstract: No abstract text available
Text: requirement, an external transistor is recommended in series with the battery. To protect the IC against high , fulfill requirements of higher charge current an external booster transistor can be used (see figure 7). , contains a simple temperature monitoring function. When the temperature level is reached, the transistor , terminated. + DC-Supply 30 V + Battery R 11 NTC R 10 T3 BC212 96 11707 ­ ­ R1 Ich R2 LED2 D2 BC212 mounted T1 on T heatsink 2 BD135 LED1 red TLHR5400 R5 R7 R6 C2 1 8 D1 green TLHG5400 6 5


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PDF U2403B U2403B D-74025 transistor BD 240
4 pin TACT SWITCH

Abstract: stm cl 120 BZX85 6 pin pulse transformer 111 charge regulator nicd SI 3105 A 1N4148 BC212 NF 430 n a3 BZX85C10
Text: high current requirement, an external transistor is recommended in series with the battery. To protect , of higher charge current an external booster transistor can be used (see figure 8). As the , transistor , T3, is switched on. If T3 is switched on and there is current flow into Pin 5, normal charge is , BC212 LXTJ mounted on heatsink T D, I R, ch T—T-T—I—^—0 1 ▼ green R,n TLHG5400 BC212 LEDI f P i-P red TLHR5400 BD135 R R, D„ LED2 I R» U2403B LEDI normal charge


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PDF U2403B U2403B typicC10, 06-Aug-99 4 pin TACT SWITCH stm cl 120 BZX85 6 pin pulse transformer 111 charge regulator nicd SI 3105 A 1N4148 BC212 NF 430 n a3 BZX85C10
TRANSISTOR BC337 SMD

Abstract: transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139
Text: BF495 CSA965 2N3703 BC184L BC550 BF496 CSA970 2N3704 BC212 BC556 BF959 , Transistor CSA1301 TIP2955 C5198 CSC3280 TIP3055 TO-3 Metal Can Package 2N3055 IRF820


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PDF MPSA45 P2N2369 PN2222 MPSA05 MPSA55 P2N2369A PN2222A MPS2907A MPSA06 MPSA56 TRANSISTOR BC337 SMD transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139
yr yf transistor

Abstract: ITT Intermetall
Text: saturation voltage Ic e s 6 ITT INTERMETALL V(br)cbo Collector-base breakdown voltage (open , ) ITT INTERMETALL Technical Information Characteristics and Maximum Ratings The electrical , are data on collector current. The collector current, quoted as one of the critical transistor values , gain etc.) when selecting a transistor . In certain cases, the quoted collector current may be exceeded without the transistor being destroyed. The absolute limit for the collector current is determined by the


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PDF
Magnetic Field Sensor FLC 100

Abstract: transistor ITT
Text: – ITT INTERMETALL • ITT Semiconductors HAL628, HAL638 ADVANCE INFORMATION Functional , transistor is switched on when the magnetic field becomes larger than the operating point Bq N' It remains , magnetic field falls below Bqfr the transistor is switched off until the magnetic field once again , switches to the appropriate state. 4bô2711 ITT INTERMETALL ■ITT Semiconductors Comparator , top view 1.5 tu iu k L . max. 0.05 _o o5 Fig. 3: Plastic Small Outline Transistor Package


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PDF HAL628, HAL638 628UA, HAL628S HAL638UA, HAL638S 170ch Magnetic Field Sensor FLC 100 transistor ITT
1997 - LM393 battery charging indicator

Abstract: charge battery lm339 TIC226 Series application notes u2400 pikatron transformer CMOS 4060 thyristor battery charging U2400B thyristor tic226 U2402B
Text: control application, shown in figure 9, is to limit the charge current. A PNP transistor is required , as battery charging is concerned. However, the transistor switch Battery Contact Monitoring with , , transistor T switches the circuit of input 4 to ground by withdrawing the battery when the charging voltage , Semiconductors 11.96 In this case, the power MOS transistor used is operated actively via clamp voltage by , directly to the MOS transistor . This means that heat can be dissipated via a heat sink due to the simple


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PDF U240xB U2400B BC237 BYW52 BD649 1N4148 1/2LM393 U2407B LM393 battery charging indicator charge battery lm339 TIC226 Series application notes u2400 pikatron transformer CMOS 4060 thyristor battery charging U2400B thyristor tic226 U2402B
16 pin diagram of uln 2003

Abstract: ULM2002 pin diagram of UlN2004 ic. uln 2003 uln 2003 pin diagram uln series 14 PIN IC ULN 2003 pin of ULN 2003 ULN2003 features ULN2001
Text: Sigrietics Interface - Transistor Arrays ULN 2001/2/3/4 High Voltage/ Current Darlington Transistor Arrays GENERAL DESCRIPTION These high-voltage, high-current Darlirgton transistor arrays are , to facilitate ease of circuit board layout and is priced to compete directly with discrete transistor , GE 41 Signetics Interface - Transistor Arrays EQUIVALENT CIRCUITS TYPE ULN2001 (each driver) v , '5 Si 1 IT" PLEASE QUOTE STOCK NO. AND MANUFACTURERS PART NO. WHEN ORDERING ITT GEMINI 265


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PDF 600mA ULN-2001 16 pin diagram of uln 2003 ULM2002 pin diagram of UlN2004 ic. uln 2003 uln 2003 pin diagram uln series 14 PIN IC ULN 2003 pin of ULN 2003 ULN2003 features ULN2001
Not Available

Abstract: No abstract text available
Text: □□□SfiSb 2T1 ■- ITT INTERMETALL • ITT Semiconductors HAL556 , Small Outline Transistor Package (SOT-89A) Weight approximately 0.04 g Dimensions in mm 4 , Lr*|~ Fig. 5: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm 4b02?]il 0 0 0 5 0 5 7 ITT INTERMETALL • ITT Semiconductors 1 3fl HAL556, HAL566 , ) Mbfl2711 4 0005Ô5Û 074 ITT INTERMETALL • ITT Semiconductors HAL556, HAL566 PRELIMINARY


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PDF HAL556, HAL566 O-92UA, OT-89A HAL566UA-E O-92UA OT-89A: O-92UA: 4bA2711 00Q5flfc
ITT DIODE

Abstract: transistor ITT DIODE ITT pnp low power fast switching transistor Solitron Transistor
Text: CONTACT EM ITT ER CONTACT -EM ITTER i- B A S E The epitaxial planar transistor construction , PLA N A R POWER TRANSISTO R Contran De/ices. Inc. BASE CONTACT - ! EM ITT ER CONTACT \ EM ITT ER BASE a A Solitron's triple diffused planar construction provides excellent features , reliability and ruggedness are integral parts of the design. EPITAXIAL PLA N A R DARLINGTON TRANSISTOR E , configuration combines a driver and an output transistor which are interconnected on the surface by aluminum or


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