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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor f422 equivalent Datasheets Context Search

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1993 - transistor equivalent table chart

Abstract: 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941
Text: equivalent circuit for the transistor . Early attempts to adapt these techniques to power amplifier design , state power amplifier design through the use of large signal transistor input and output impedances , parameters to power amplifier design, the 2N3948 transistor was considered. A performance comparison was , pF Transistor output resistance 199 Ohms 92 Ohms 4.6 pF 5.0 pF 12.4 dB 8.2 dB , reactance. Note also that the transistor 's output resistances and power gains are considerably different


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PDF AN282A/D AN282A mid-1960 transistor equivalent table chart 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941
1998 - Philips high frequency bipolar transistor with Ft

Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bipolar transistor die layout RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Philips high frequency bipolar transistor NPN planar RF transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR
Text: power amplifier fundamentals 1.1.3 Transmitting transistor design width'). And, an equivalent to , , is published in data sheets as Cre: Transistor equivalent circuit At this point, it is useful to introduce a basic equivalent circuit of a bipolar RF transmitting transistor , and a few simple , CBE. Figure 1-12 shows a simple equivalent circuit of an RF transistor with load circuit. Note , . Fig.1-12 Simple equivalent circuit of a bipolar RF transmitting transistor . 1998 Mar 23


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PDF MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bipolar transistor die layout RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Philips high frequency bipolar transistor NPN planar RF transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR
1993 - motorola rf Power Transistor

Abstract: transistor equivalent table chart 2N6256 AN282A AN548A transistor equivalent table 2N5849 motorola 2N3948 transistor for RF amplifier 2N5849
Text: equivalent circuit for the transistor . Early attempts to adapt these techniques to power amplifier design , state power amplifier design through the use of large signal transistor input and output impedances , parameters to power amplifier design, the 2N3948 transistor was considered. A performance comparison was , transistor 's output resistances and power gains are considerably different for the two modes of operation , input and output impedance data for the transistor . The design method described in this report hinges


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PDF AN282A/D AN282A mid-1960 motorola rf Power Transistor transistor equivalent table chart 2N6256 AN282A AN548A transistor equivalent table 2N5849 motorola 2N3948 transistor for RF amplifier 2N5849
2N5995

Abstract: transistor ac 125 equivalent Arco 424 rca 632 92CS-17399 ARCO 0.1 Z VK 200-09 50N050
Text: Overlay Transistor For 12.5-Volt Applications in VHF Communications Equipment Features: â , n-p-n planar transistor featuring overlay emitter-electrode construction. This type features a hermetic , type is designed for stripline as well as lumped-constant circuits. This transistor is completely , derating. Li 1/2 turn No. 14 wire, 1/4 in. I.D. RFC - Z - 450 ii, Ferroxcube VK-200-09/3B or equivalent Ci 7-100pF, Arco 423 or equivalent C2 - 4-40 pF, Arco 422 or equivalent C3 ■0.1 /iF ceramic C4


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PDF 2N5995 175-MHz 92SS-3763R3 2N5995 transistor ac 125 equivalent Arco 424 rca 632 92CS-17399 ARCO 0.1 Z VK 200-09 50N050
h1208

Abstract: equivalent transistor c 495 92CS-223S5 radiosonde TA8340 NYTRONICS choke Nytronics relay 92CM-22389 transistor C4 168 H-1208
Text: RFC: choke, 0.12 ¿iH, Nytronics or equivalent L: 0.150-in. (3.8 mm) transistor lead length R1: 0.82 , -1208 750-mW, 1.68-GHz Oscillator Transistor Features: ■Emitter-ballasting resistors ■750 , lumped-element circuits Type 41038* is an epitaxial silicon n-p-n planar transistor with overlay multiple-emitter-site construction and emitter-ballasting resistors. Intended applications for this transistor include , . VCE0 21 V EMITTER-TO-BASE VOLTAGE .VEB0 3.5 V TRANSISTOR


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PDF H-1208 750-mW, 68-GHz 750-rnW TA8340. h1208 equivalent transistor c 495 92CS-223S5 radiosonde TA8340 NYTRONICS choke Nytronics relay 92CM-22389 transistor C4 168 H-1208
Narda 904N

Abstract: transistor et 455 sealectro AN3764 equivalent transistor rf 2N5470 TA7003 Narda Microwave narda rf 0/Narda 904N
Text: silicon n-p-n planar transistor employing the overlay emitter-electrode construction. It is intended for , operation in the common-base amplifier configuration. This transistor can be used in both large and , 2N5470 Power Transistor ," by G. Hodowanec, O.P. Hart, and H.C. Lee. »Formerly RCA Dev. Type No. TA7003 , TRANSISTOR DISSIPATION:.PT At case temperatures up to 25 °C . 3.5 W At case temperatures above , SILICON N-P-N "overlay" TRANSISTOR - T JEDEC TO-215AA For UHF/Microwave Power Amplifiers, Microwave


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PDF 2N5470 RCA-2N5470* 2N5470 2N5470, AN3764, 16-Detail Narda 904N transistor et 455 sealectro AN3764 equivalent transistor rf TA7003 Narda Microwave narda rf 0/Narda 904N
56-590-65/4A

Abstract: ferroxcube 56-590-65/4a rca 632 Arco 423 arco 404 2N5996 i7356 RCA Power Transistor 4 225 VK20009-3B
Text: -MHz Emitter-Ballasted Overlay Transistor Silicon N-P-N Device for 12.5-Volt Applications in VHF Communications , JS-6 RDF-3/JS-9 RDF-7. RCA type 2N59963 is an epitaxial silicon n-p-n planar transistor featuring , individual ballast resistance in each of the emitter sites for stabilization. The transistor is completely , equivalent Ci - 7-1 OOpF, Arco 423 or equivalent C2 - 4-40 pF, Aorco 422 or equivalent C3 -0.1 /jF ceramic C4 - 0.001 jiF feedthrough C5 - 62 pF silver mica Cq - 14-150pF, Arco 424 or equivalent C7 - 24-200pF


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PDF 2N5996 175-MHz 15-watt COLLECTOR50 V61R3 2N5996 56-590-65/4A ferroxcube 56-590-65/4a rca 632 Arco 423 arco 404 i7356 RCA Power Transistor 4 225 VK20009-3B
1994 - motorola transistor

Abstract: Using Linvill Techniques for R. F. Amplifiers 2N2221 MM1941 an238 motorola Using Linvill Techniques transistor for RF amplifier and mixer 2N3308 AN238 RF Transistor Selection
Text: where L = 43.5 µH. In this case CT = 25 pF. From the y­parameter equivalent of the transistor the , the products referenced may be discontinued. Transistor Mixer Design Using 2-Port Parameters , determine the potential stability of the transistor . The Linvill stability factor C is computed from the , is less than 1, the transistor is unconditionally stable. If C is greater than 1, the transistor is , is with both input and output terminals of the transistor open circuited. With no external feedback


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PDF AN238/D AN238 motorola transistor Using Linvill Techniques for R. F. Amplifiers 2N2221 MM1941 an238 motorola Using Linvill Techniques transistor for RF amplifier and mixer 2N3308 AN238 RF Transistor Selection
d 331 TRANSISTOR equivalent

Abstract: RCA-40934 rca transistor RCA 40934 transistor rca 40934 100 watt hf transistor 12 volt 7470 ic 300 watt hf transistor 12 volt VK20009-3B TO216
Text: N-P-N VHF/UHF Transistor 12.5-Volt Type For Class C Amplifier Applications Features: â , at 470 MHz RCA-40934* is an epitaxial silicon n-p-n planar transistor that features overlay , . COLLECTOR CURRENT: Continuous . TRANSISTOR DISSIPATION: At case temperatures up , €”Large-signal parallel equivalent input resistance vs. frequency. COLLECTOR SUPPLY VOLTAGE (Vcc)s'2 5 V CASE TEMPERATURE (TC)«25°C r4498RI Fig. 5—Large-signal parallel equivalent output


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PDF RCA-40934* d 331 TRANSISTOR equivalent RCA-40934 rca transistor RCA 40934 transistor rca 40934 100 watt hf transistor 12 volt 7470 ic 300 watt hf transistor 12 volt VK20009-3B TO216
1994 - Y11E

Abstract: Using Linvill Techniques MM1941 transistor for RF amplifier and mixer small signal transistor MOTOROLA RF Transistor Selection NPN transistor 2n2221a AN238 power AN238 2N3308
Text: Transistor Mixer Design Using 2­Port Parameters Prepared by: Ernest Klein Applications Engineering , may be used to determine the potential stability of the transistor . The Linvill stability factor C , than 1, the transistor is unconditionally stable. If C is greater than 1, the transistor is , is with both input and output terminals of the transistor open circuited. With no external feedback, an unconditionally stable transistor will not oscillate under any combination of load and source


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PDF AN238/D AN238 Y11E Using Linvill Techniques MM1941 transistor for RF amplifier and mixer small signal transistor MOTOROLA RF Transistor Selection NPN transistor 2n2221a AN238 power AN238 2N3308
1999 - transistor x1

Abstract: SMD led spice model list of P channel power mosfet buz siemens motor starter wiring schematic infineon cool MOSFET dynamic characteristic test siemens datenbuch Siemens 3TH 80 Siemens 3TH 20-22 siemens profet datenbuch
Text: equivalent circuit diagrams is a description of the implementation of a dynamic temperature-dependent model , . Ignoring this effect can lead to an undesired ­ even catastrophic ­ turn-on of the transistor when it , cannot cool itself, this can be described formally by L and G The equation of =0 =0. an equivalent , ) heat conduction processes can therefore be modeled by a transmission line equivalent circuit diagram , Table 1: Corresponding physical variables Related to a power transistor , the heat path from the chip


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PDF com/products/36/36 115ff. BTS550P transistor x1 SMD led spice model list of P channel power mosfet buz siemens motor starter wiring schematic infineon cool MOSFET dynamic characteristic test siemens datenbuch Siemens 3TH 80 Siemens 3TH 20-22 siemens profet datenbuch
2001 - voltage divider rule

Abstract: norton theorem voltage divider "current divider rule" SLOD006A SLOA074 norton amplifier transistor circuit thevenin theorem Mancini
Text: the output resistor, the equivalent parallel value comprised of the output resistor and loading , simple series equivalent circuit, thus Thevenin's theorem simplifies the analysis. There are two , these terminals. The final step is to substitute the Thevenin equivalent circuit for the part you , 's Equivalent Circuit for Figure 2­7 The Thevenin equivalent circuit is a simple series circuit, thus further , VOUT (a) The Original Circuit VTH R3 X Y R4 VOUT (b) The Thevenin Equivalent


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PDF SLOA074 SLOD006A voltage divider rule norton theorem voltage divider "current divider rule" SLOD006A SLOA074 norton amplifier transistor circuit thevenin theorem Mancini
equivalent transistor rf "30 mhz"

Abstract: MRF392 NPN TRANSISTOR Z4 lx125 motorola rf Power Transistor mrf392 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor , MRF392 125 W, 30 to 500 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON MAXIMUM , : 1. Each transistor chip measured separately. 2. Both transistor chips operating in push-pull amplifier. 0 + 28V C1, C2 — 240 pF, 100 Mil Chip Cap (ATC) or Equivalent C3 — 3.6 pF, 100 Mil Chip Cap (ATC) or Equivalent C4, C8 — 8.2 pF, 100 Mil Chip Cap (ATC) or Equivalent . C5, C6 — 20 pF


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PDF MRF392 equivalent transistor rf "30 mhz" NPN TRANSISTOR Z4 lx125 motorola rf Power Transistor mrf392 motorola
1999 - MB3780A

Abstract: MB3773 equivalent mb3780 replacement of MB3771 MB3790 MB3773 MB3771 3.3V MB3793 MB3793-42 MB3771
Text: transistor at pin 7. In this case, the Figure 1.1-8 and Figure 1.1-14 circuits are equivalent . Figure , ) because the internal transistor at pin (2) shown in Figure 1.2-1 is off. This is equivalent to the Figure , equivalent circuit is given in Figure 1.2-5 . When the internal output transistor at pin (6) is turned on , . 49 Equivalent Circuits for MB3771 Input/output Unit , . 72 Equivalent Circuits for MB3773 Input/output Unit


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PDF AM41-10101-1E MB3780A MB3773 equivalent mb3780 replacement of MB3771 MB3790 MB3773 MB3771 3.3V MB3793 MB3793-42 MB3771
1999 - MB3780A

Abstract: mb3780 MB3790 MB3773 equivalent 12v to 230v inverters circuit diagrams MB3771 3.3V MB3773 MB3771 MB3771 equivalent 100MW
Text: transistor at pin 7. In this case, the Figure 1.1-8 and Figure 1.1-14 circuits are equivalent . Figure , ) because the internal transistor at pin (2) shown in Figure 1.2-1 is off. This is equivalent to the Figure , equivalent circuit is given in Figure 1.2-5 . When the internal output transistor at pin (6) is turned on , . 49 Equivalent Circuits for MB3771 Input/output Unit , . 72 Equivalent Circuits for MB3773 Input/output Unit


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PDF AM41-10101-1E MB3780A mb3780 MB3790 MB3773 equivalent 12v to 230v inverters circuit diagrams MB3771 3.3V MB3773 MB3771 MB3771 equivalent 100MW
Not Available

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Pow er Transistor , RF POWER TRANSISTOR NPN SILICON < 2 6> j- 5,8> h !" < 1.4 < 3 _I The MRF392 , , VSWR = 30:1, all phase angles) NOTES: 1. Each transistor chip measured separately. 2. Both transistor , Degradation in Output Power C1, C2 - 240 pF, 100 Mil Chip Cap (ATC) or Equivalent C3 - 3.6 pF, 100 Mil Chip Cap (ATC) or Equivalent C4, C8 - 8.2 pF, 100 Mil Chip Cap (ATC) or Equivalent C5, C6 - 20 pF


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PDF MRF392
Not Available

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor , BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON I_I The MRF392 is two transistors in a , phase angles) NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in , £! Semi-Rigid Coaxial Cable 86 Mil OD, 2 " L C1, C2 - 240 pF, 100 Mil Chip Cap (ATC) or Equivalent , Equivalent C4, C8 - 8.2 pF, 100 Mil Chip Cap (ATC) or Equivalent Z1 - Microstrip Line 270 Mil L x 125 Mil W


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PDF MRF392
1997 - 7447 BCD to Seven Segment display

Abstract: SDA2014 common anode 7-segment display 7 segment with 7447 7448 7 SEGMENT DISPLAY COMMON CATHODE 7 segment display lm3915 7448 bcd to seven segment decoder 4-DIGIT 7-SEGMENT LED DISPLAY MULTIPLEX 7447 7-segment display 7447 BCD to Seven Segment display common cathode
Text: -If Figure 3. Circuits for TTL or transistor and darlington transistor Background V cc LED , Darlington Transistor TTL or Transistor The partitioning of these elements are dependent on the , . Therefore a darlington versus a single output transistor will have different current limiting resistor , . Open collector type driver with common anode display Data Input Vcc VCC 7448 or Equivalent , 7447 or equivalent Figure 7. Common anode display with driver Vcc Figure 9. Open collector


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PDF XR-2201 XR-2202 XR-2203 XR-2204 CA3081 CA3082 UAA180 LM3914 LM3915 7447 BCD to Seven Segment display SDA2014 common anode 7-segment display 7 segment with 7447 7448 7 SEGMENT DISPLAY COMMON CATHODE 7 segment display lm3915 7448 bcd to seven segment decoder 4-DIGIT 7-SEGMENT LED DISPLAY MULTIPLEX 7447 7-segment display 7447 BCD to Seven Segment display common cathode
2000 - SLOA025

Abstract: sloa025a voltage divider rule
Text: . . . . . . . . . . . . . . . . 7 Calculation of a Saturated Transistor Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Transistor Amplifier . , . . . . . . . . . . . . . . . . . 5 8 Thevenin's Equivalent Circuit for Figure 7 . . . . . . . . . , Thevenin's Equivalent Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . 8 14 Saturated Transistor Circuit . . . . . . . . . .


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PDF SLOA025A SLOA025 voltage divider rule
2000 - voltage divider rule

Abstract: sloa025a "current divider rule" SLOA025
Text: . . . . . . . . . . . . . . . . 7 Calculation of a Saturated Transistor Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Transistor Amplifier . , . . . . . . . . . . . . . . . . . 5 8 Thevenin's Equivalent Circuit for Figure 7 . . . . . . . . . , Thevenin's Equivalent Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . 8 14 Saturated Transistor Circuit . . . . . . . . . .


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PDF SLOA025A voltage divider rule "current divider rule" SLOA025
2N6985

Abstract: lg system ic transistor ac 125 equivalent
Text: DATA The RF Line NPN Silicon Push-Pull RF Power Transistor . designed primarily for wideband , 125 W, 30 to 400 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON 4> <1 , , VSWR = 30:1, all phase angles) V No Degradation in Output Power NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in push-pull amplifier. * Indicates JEDEC Registered Data. 0 + 28v C1, C2 — 240 pF, 100 Mil Chip Cap (ATC) or Equivalent C3 — 4.7 pF, 100 Mil


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PDF b3b72SM 2N6985 G1GD123 2N6985 lg system ic transistor ac 125 equivalent
2009 - Not Available

Abstract: No abstract text available
Text: transistor Product data sheet 2001 Dec 13 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN QUICK REFERENCE DATA FEATURES • 600 mW total power , equivalent on-resistance <500 mΩ PINNING PIN APPLICATIONS DESCRIPTION 1, 4 • Supply , 4 DESCRIPTION TR2 NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package , Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN LIMITING VALUES In


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PDF M3D302 PBSS4140DPN 613514/01/pp11
equivalent transistor n 4212

Abstract: Indiana general ferrite core 2N5071 CF-108-Q2 arco 427 TA2827 CF-111 ferrite core TRANSISTOR J 4310 EQUIVALENT indiana general CF-111
Text: -MHz Emitter-Ballasted Overlay Transistor Silicon N-P-N Device for 24-Volt Applications in VHF Communications Equipment , silicon n-p-n planar transistor featuring overlay emitter electrode construction. This device utilizes , -MHz frequency range. The transistor can be operated under a wide range of mismatched load conditions. All units , . IB " TRANSISTOR DISSIPATION: P-p At case temperatures up to 25°C . At case , , ARCO 427, or equivalent C3, C4 : 32-250 pF trimmer capacitor, ARCO 426, or equivalent Cg: 1000 pF


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PDF 2N5071 76-MHz 24-Volt 2N50713 equivalent transistor n 4212 Indiana general ferrite core 2N5071 CF-108-Q2 arco 427 TA2827 CF-111 ferrite core TRANSISTOR J 4310 EQUIVALENT indiana general CF-111
2009 - PBSS4140DPN

Abstract: SC74 SOT457 MARKING CODE M2
Text: NPN/PNP transistor Product data sheet 2001 Dec 13 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor FEATURES PBSS4140DPN QUICK REFERENCE DATA · 600 mW total , - - RCEsat equivalent on-resistance <500 m · High current capability · Reduces , 4 DESCRIPTION TR2 NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package , Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN LIMITING VALUES In


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PDF M3D302 PBSS4140DPN 613514/01/pp11 PBSS4140DPN SC74 SOT457 MARKING CODE M2
1997 - static characteristics of mosfet and igbt

Abstract: IGBT tail time 2A mosfet igbt driver stage mosfet, igbt, transistor driver igbt SIEMENS Semiconductor Group igbt main disadvantages of mosfet comparison of IGBT and MOSFET SIEMENS thyristor transistor igbt
Text: bipolar transistor has a lower saturation voltage (VCE sat VDSon) and is cheaper. In comparison with a bipolar transistor (assuming the same chip dimensions), a power MOSFET with a reverse voltage of VDS = , transistor . It combines the characteristics of the power MOSFET with those of the bipolar transistor . The , equivalent circuits and ON-resistance for both power MOSFET and IGBT. As can be seen from the semiconductor , ) Output Characteristic Curve Range ID = f (VDS) for the MOSFET d) Electrical Equivalent Circuit for the


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