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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor equivalent table Datasheets Context Search

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2007 - SSTL18I

Abstract: FF1136 thevenin hyperlynx XAPP863 UG199 UG190 ML561 ML461 magic eye
Text: time t = 0, the upper transistor turns on and the lower transistor turns off. Also at this time, the voltage across the capacitor is V1. 2. Current flows from the VCCO supply through the upper transistor , transistor turns off and the lower transistor turns on. 4. Current now flows out of the capacitor through the lower transistor into ground, discharging the capacitor to voltage V1 at time t = T, at which , any time, t, the voltage across the upper transistor is given by Equation 2. Equation 2 V DS ( t


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PDF XAPP863 org/download/search/JESD8-15a UG190, com/bvdocs/userguides/ug190 UG079, ML461 com/bvdocs/userguides/ug079 UG199, ML561 com/bvdocs/userguides/ug199 SSTL18I FF1136 thevenin hyperlynx XAPP863 UG199 UG190 magic eye
2013 - BLF6G38S-25

Abstract: transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
Text: -25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = , LDMOS transistor Table 9. L1 R1, R2 R3 List of components (see Figure 10) .continued Description , LDMOS transistor 10. Abbreviations Table 11. Acronym CCDF CW ESD EVM FCH FFT IBW IS-95 LDMOS N-CDMA , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 - 11 March 2013 Product data sheet


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
2008 - smd transistor equivalent table

Abstract: smd transistor 3400 J412 - TRANSISTOR SMD BLF6G38S-25 RF35 cdma QPSK modulation Walsh pilot C5750X7R1H106M C4532X7R1H475M BLF6G38-25 BDS3/3/4.6-4S2-Z
Text: Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise , power LDMOS transistor 10. Abbreviations Table 11. Abbreviations Acronym Description , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 - 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 smd transistor equivalent table smd transistor 3400 J412 - TRANSISTOR SMD RF35 cdma QPSK modulation Walsh pilot C5750X7R1H106M C4532X7R1H475M BDS3/3/4.6-4S2-Z
2008 - TRANSISTOR j412

Abstract: J412 - TRANSISTOR SMD BLF6G38S-25
Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 , 14 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Table 10. L1 R1 , Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 10. Abbreviations Table 11. Acronym , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 TRANSISTOR j412 J412 - TRANSISTOR SMD
1997 - 7447 BCD to Seven Segment display

Abstract: SDA2014 common anode 7-segment display 7 segment with 7447 7448 7 SEGMENT DISPLAY COMMON CATHODE 7 segment display lm3915 7448 bcd to seven segment decoder 4-DIGIT 7-SEGMENT LED DISPLAY MULTIPLEX 7447 7-segment display 7447 BCD to Seven Segment display common cathode
Text: -If Figure 3. Circuits for TTL or transistor and darlington transistor Background V cc LED , Darlington Transistor TTL or Transistor The partitioning of these elements are dependent on the , . Therefore a darlington versus a single output transistor will have different current limiting resistor , . Open collector type driver with common anode display Data Input Vcc VCC 7448 or Equivalent , 7447 or equivalent Figure 7. Common anode display with driver Vcc Figure 9. Open collector


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PDF XR-2201 XR-2202 XR-2203 XR-2204 CA3081 CA3082 UAA180 LM3914 LM3915 7447 BCD to Seven Segment display SDA2014 common anode 7-segment display 7 segment with 7447 7448 7 SEGMENT DISPLAY COMMON CATHODE 7 segment display lm3915 7448 bcd to seven segment decoder 4-DIGIT 7-SEGMENT LED DISPLAY MULTIPLEX 7447 7-segment display 7447 BCD to Seven Segment display common cathode
2008 - 30RF35

Abstract: VJ1206Y104KXB smd transistor equivalent table
Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics , BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 - 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF , frequency range NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 2


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PDF BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 30RF35 VJ1206Y104KXB smd transistor equivalent table
MDB Resistor

Abstract: 2N1224 2N1225 transistor equivalent table IRC MMC carbon marking "3AA" 410B
Text: 26 April 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR , PNP, GERMANIUM, LOW-POWER , , germanium, high-frequency, low-power transistor . 1. 2 Physical dimensions. See figure 1 (TO-33). 1. 3 , -19500 may be omitted from the body of the transistor at the option of the manufacturer: (a) Country of , corners of tab. FIGURE 1. Physical dimensions of transistor types 2N1224 and 2N1225 (TO-33). 3 MIL-S , angle. FIGURE 2. Gage for lead and tab location for transistor types 2N1224 and 2N1225. 4 aoecixiea


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PDF MIL-S-19500/189B 2N1224 2N1225 MDB Resistor 2N1225 transistor equivalent table IRC MMC carbon marking "3AA" 410B
transistor equivalent table

Abstract: IC FP103 sot-26 pwm controller Transistor AND DIODE Equivalent list FP103 Device Name 23 330 LDO 3.3V RSX101M-30 MMBT589LT1 ccd camera module ta701
Text: schottky barrier diode having equivalent specification in the Table A. Table A : Selection guide for , components · Externally composed LDO pass transistor · 500kHz fixed frequency internal oscillator · Over , Component Description Type Value Composite type with a PNP transistor and schottky barrier diode IC FP103 Q1 PNP transistor Chip transistor MMBT589LT1 L1 Output filter , transistor and a schottky barrier diode. In this case, you make use the discrete components with proper


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PDF 350mA) ADT7220 ADT7220 350mA 500kHz 300mA transistor equivalent table IC FP103 sot-26 pwm controller Transistor AND DIODE Equivalent list FP103 Device Name 23 330 LDO 3.3V RSX101M-30 MMBT589LT1 ccd camera module ta701
mp4001

Abstract: MP4001 equivalent transistor equivalent table bipolar transistor NEC MP4501 mp4001 tran
Text: necessary to check the Tj (peak) o f each transistor using the DC thermal resistance given in Table 2 and , Rth 3 = Rth 4 = thermal resistance for each transistor from Table 2 is as follows. U . 0 W - 4 2 , radiation equivalent circuit without heat sink Table 3 0i and 0m list for using single units Package , external heat sinks Figure 9 Simple radiation equivalent circuit using external heat sink Table 4 0i , Power Transistor M odule and Power MOS-FET M odule As the density of electronic part mounting


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PDF 700cm1 300cmJ mp4001 MP4001 equivalent transistor equivalent table bipolar transistor NEC MP4501 mp4001 tran
transistor equivalent table

Abstract: sot-26 pwm controller SOT-26 301 PWM controller sot-26 Transistor Equivalent list RSX101M-30 MMBT589LT1 FP103 ADT7221 Transistor AND DIODE Equivalent list
Text: schottky barrier diode having equivalent specification in the Table A. Table A : Selection guide for , components · Externally composed LDO pass transistor · 500kHz fixed frequency internal oscillator · Over , Component Description Type Value Composite type with a PNP transistor and schottky barrier diode IC FP103 Q1 PNP transistor Chip transistor MMBT589LT1 L1 Output filter , transistor and a schottky barrier diode. In this case, you make use the discrete components with proper


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PDF 350mA) ADT7221 ADT7221 350mA 500kHz 300mA transistor equivalent table sot-26 pwm controller SOT-26 301 PWM controller sot-26 Transistor Equivalent list RSX101M-30 MMBT589LT1 FP103 Transistor AND DIODE Equivalent list
1997 - laser diode spice modeling

Abstract: laser diode spice model simulation spice ATF 10136 ATF13136 atf-10136 spice MSA-09 mmic a20 MSA-0311 S parameters for ATF 10136 AT-41500
Text: transistor or MMIC can suffer permanent electrical damage if any of its breakdown voltages are exceeded , and reliability. Transistor Chip Use This is an abstract from Application Note AN-A005: Transistor Chip Use. Packaging, Shipment, and Storage Hewlett-Packard chips are supplied in two inch , COMMON Figure 1. MSA Equivalent Circuit Schematic. 10-8 pad on the device to a circuit trace , using a resistively-biased PNP transistor as a current source is shown in Figure 3. In this circuit


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PDF 42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 ATF13136 atf-10136 spice MSA-09 mmic a20 MSA-0311 S parameters for ATF 10136 AT-41500
1998 - Y parameters of transistors

Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B y1 marking code transistor transistor marking pl similar 2N2219 transistor
Text: TYPE NUMBER microwave transistor TR DIMENSIONS 1/4 MC3403 or equivalent note 1 2N2219 , power MOS transistors are marked with a code that indicates their gate-source voltage range (see Table , trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking codes may be used for identification (see Table 9). Table 8 Marking codes for RF power transistors CODE VGS CODE VGS 0 1.00


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PDF MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B y1 marking code transistor transistor marking pl similar 2N2219 transistor
2009 - smd transistor 6g

Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 radar circuit component sot975c transistor equivalent table TAJD106K035R BLS6G2731-6G J656
Text: radar power transistor 2. Pinning information Table 2. Pinning Pin Description 1 , Semiconductors LDMOS S-Band radar power transistor 6. Characteristics Table 6. Characteristics Tj = 25 , BLS6G2731-6G NXP Semiconductors LDMOS S-Band radar power transistor Table 8. Typical impedance , radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym Description , BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 - 19 February 2009 Product data


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PDF BLS6G2731-6G BLS6G2731-6G smd transistor 6g 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 radar circuit component sot975c transistor equivalent table TAJD106K035R J656
2009 - PBSS9110Y

Abstract: No abstract text available
Text: , 1 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance , Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal , Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics , ) transistor 9. Revision history Table 8. Revision history Document ID Release date Data sheet , · · Modifications: Table 2 "Discrete pinning": amended Figure 10 " Equivalent on-resistance


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PDF PBSS9110Y OT363 SC-88) OT363 PBSS9110Y
K 3699 transistor

Abstract: two transistor flyback D 400 F 6 F BIPOLAR TRANSISTOR bipolar transistor td tr ts tf k 2445 transistor Tektronix AM503
Text: Breakdown - V(BR)CES - 650 V S ta te -o f-A rt Bipolar Power Transistor Design Fast Inductive Switching , are given to facilitate "worst case" design. REV 1 3-696 Motorola Bipolar Power Transistor , OFF CHARACTERISTICS (1) Colledor-Emitter Sustaining Voltage ( Table 1) (Iq » 20 mAdc, lg - 0 , Inductive Load ( Table 1) Storage Crossover Fall Time Storage Crossover Fall Time iC - 5.0 A, Iß! - 0.5 A , 2000 150 75 2600 200 125 ns Resistive Load ( Table 2) Delay Time Rise Time Storage Time Fall Time


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PDF MJE16106 AN875) MUR105 MUR170 UR405 MUR470 AR131) K 3699 transistor two transistor flyback D 400 F 6 F BIPOLAR TRANSISTOR bipolar transistor td tr ts tf k 2445 transistor Tektronix AM503
2009 - S9110S

Abstract: PBSS9110S SC-43A s9110
Text: Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values , , 1 A PNP low VCEsat (BISS) transistor 9. Revision history Table 8. Revision history , PBSS9110S 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 - 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT54 (SC-43/TO , . relays, buzzers and motors) DC-to-DC converter 1.4 Quick reference data Table 1. Quick reference


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PDF PBSS9110S SC-43/TO-92) PBSS9110S S9110S SC-43A s9110
2004 - pbss4160dpn

Abstract: PNP TRANSISTOR SOT457 SOT457 MARKING CODE B4
Text: 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 2. Pinning information Table 2: Discrete , Semiconductors 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 5. Limiting values Table 5: Limiting values , , 1 A NPN/PNP low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tj = 25 , Philips Semiconductors 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 9. Revision history Table 8 , PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Rev. 01 - 3 June 2004 Objective


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PDF PBSS4160DPN OT457 SC-74) pbss4160dpn PNP TRANSISTOR SOT457 SOT457 MARKING CODE B4
2009 - PBSS9110AS

Abstract: 9110as PBSS9110S SC-43A
Text: Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values , low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless , , 1 A PNP low VCEsat (BISS) transistor 9. Revision history Table 8. Revision history , PBSS9110AS 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 - 21 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat (BISS) transistor in a SOT54


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PDF PBSS9110AS SC-43/TO-92) PBSS9110AS 9110as PBSS9110S SC-43A
2009 - MFRC52x

Abstract: AN166510 - Amplifier antenna matching calculation RFSim99 antenna matching 13,56 mhz calculation AN10893 13.56MHZ RFID nxp nxp proximity antenna design antenna matching calculation NXP antenna design guide 13.56 power amplifier nxp
Text: equivalent equipment. The example antenna has following values: Table 3. Measured Values of Sample , Rext, for a quality factor of 25 (refer to Table 1: Mathematical deduction to calculate the equivalent , environmental influences to be taken into consideration. The equivalent circuits and the relevant formulas are , uses a transistor circuit to amplify the digital signal of the NXP Semiconductors contactless reader , consists of a resistor Rb which is connected to the base of the transistor . The resistor limits the


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PDF AN10893 MFRC52x MFRC52x. AN10893 MFRC52x AN166510 - Amplifier antenna matching calculation RFSim99 antenna matching 13,56 mhz calculation 13.56MHZ RFID nxp nxp proximity antenna design antenna matching calculation NXP antenna design guide 13.56 power amplifier nxp
2009 - Not Available

Abstract: No abstract text available
Text: of 13 PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor Table 5 , PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor Table 7. Characteristics , ) transistor 9. Revision history Table 8. Revision history Document ID Release date Data sheet , PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 — 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC


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PDF PBSS8110Y OT363 SC-88) OT363 PBSS8110Y
2008 - transistor K 1352

Abstract: C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB RF35 C4532X7R1H475M BLF6G27LS-135 BLF6G27-135 30RF35 722 smd transistor
Text: Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless , Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Table 10. Measured test circuit , BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 - 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station


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PDF BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 transistor K 1352 C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB RF35 C4532X7R1H475M 30RF35 722 smd transistor
transistor equivalent table

Abstract: 3155 power transistor P6042 transistor crossover
Text: desired VgEfoff) at Point A. 3-156 Motorola Bipolar Power Transistor Device Data 2N6836 Table 2 , Saturation Voltages Leakage Currents 15 AMPERE NPN SILICON POWER TRANSISTOR 450 VOLTS 175 WATTS o- · , Rejc Tl °c/w °c Motorola Bipolar Power Transistor Device Data 3-151 2N6836 ELECTRICAL , (1) Collector-Emitter Sustaining Voltage ( Table 2) (lc = 100 mA, lB - 0 ) Collector Cutoff Current , . ftest - 1-0 kHz) SWITCHING CHARACTERISTICS Resistive Load ( Table 1) Delay Time Rise Time Storage Time


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PDF 2N6836 P-6042 transistor equivalent table 3155 power transistor P6042 transistor crossover
2009 - C 102 transistor equivalent table

Abstract: PBSS8110Y PPBSS8110Y
Text: Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Discrete , Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor Table 5. Limiting values .continued In , Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor Table 7. Characteristics .continued Tj = 25 , Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 9. Revision history Table 8. Revision , PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 - 21 November 2009 Product data


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PDF PBSS8110Y OT363 SC-88) OT363 PBSS8110Y C 102 transistor equivalent table PPBSS8110Y
2004 - PBSS8110Y

Abstract: PPBSS8110Y
Text: Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor Table 5: Limiting values , 100 V, 1 A NPN low VCEsat (BISS) transistor Table 7: Characteristics .continued Tj = 25 °C , PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 - 2 June 2004 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC , Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit


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PDF PBSS8110Y OT363 SC-88) OT363 PBSS8110Y PPBSS8110Y
2000 - Basic principle of AC to DC conversion using SCR

Abstract: SCR TRANSISTOR 6NTP2A high power Triode for induction heating Semiconductor Devices, Diode, and SCR Catalog SCR gate Control IC ericsson telecom catalog asymmetrical SCR SCR 214 A101 TRANSISTOR
Text: the bottom contact. Also shown are the equivalent circuit elements created by the semiconductor , stopper diffusion. Transistor TR1 Although the is formed by the double sided glass n+pn- layers. Similarly, mesa gives the transistor TR2 is formed by smallest chip size, the pn-p layers. Avalanche , resistor R1, Figure 4. wafer size that can be processed shunt the base-emitter junction of transistor , give a higher breakdown voltage than required, and diffuse Transistor Junctions, 1000 hours, 720 V at


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PDF 8200M, 8201M 40xxL1BJ, 40xxH1BJ 3700F3, 4700F3 4360H3BJ Basic principle of AC to DC conversion using SCR SCR TRANSISTOR 6NTP2A high power Triode for induction heating Semiconductor Devices, Diode, and SCR Catalog SCR gate Control IC ericsson telecom catalog asymmetrical SCR SCR 214 A101 TRANSISTOR
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