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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor equivalent mtp2955v Datasheets Context Search

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2955v

Abstract: No abstract text available
Text: versus Voltage Motorola TMOS Power MOSFET Transistor Device Data 3 MTP2955V POWER MOSFET , Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTP2955V Rg , GATE RESISTANCE , Recovery Waveform 6 Motorola TMOS Power MOSFET Transistor Device Data MTP2955V PACKAGE , MOSFET Transistor Device Data 7 MTP2955V Motorola reserves the right to make changes without , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2955V /D Designer's TM Data


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PDF MTP2955V/D 2955v
2000 - MTP2955

Abstract: MTP2955V/SSP35n03 25c1815 MTP2955V AN569 Power MOSFET 12 Amps, 60 Volts p-Channel
Text: MTP2955V Preferred Device Power MOSFET 12 Amps, 60 Volts P­Channel TO­220 This Power MOSFET , 221A STYLE 5 1 °C/W RJC RJA 260 2 MTP2955V LLYWW 1 Gate 3 2.5 62.5 TL 4 Drain 4 3 Source 2 Drain °C MTP2955V LL Y WW = Device Code = Location Code = Year = Work Week ORDERING INFORMATION Device MTP2955V Package Shipping TO­220AB 50 , : MTP2955V /D MTP2955V ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic


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PDF MTP2955V r14525 MTP2955V/D MTP2955 MTP2955V/SSP35n03 25c1815 MTP2955V AN569 Power MOSFET 12 Amps, 60 Volts p-Channel
1999 - Not Available

Abstract: No abstract text available
Text: MTP2955V May 1999 DISTRIBUTION GROUP* MTP2955V P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster , Fairchild Semiconductor Corporation MTP2955V Rev. A MTP2955V (OHFWULFDO &KDUDFWHULVWLFV 6\PERO '66 , % MTP2955V Rev. A TO-220 Tape and Reel Data and Package Dimensions TO-220 Tube Packing Configuration


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PDF MTP2955V
1999 - IR 9852

Abstract: 7w66 MTP2955V/SSP35n03
Text: MTP2955V May 1999 MTP2955V * P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower , Semiconductor Corporation MTP2955V Rev. A MTP2955V (OHFWULFDO &KDUDFWHULVWLFV 6\PERO '66 U Ã2Ã , % MTP2955V Rev. A TO-220 Tube Packing Data TO-220 Tube Packing Configuration: Figur e 1.0 Packaging


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PDF MTP2955V MTP2955V* IR 9852 7w66 MTP2955V/SSP35n03
2006 - Not Available

Abstract: No abstract text available
Text: MTP2955V Preferred Device Power MOSFET 12 Amps, 60 Volts P-Channel TO-220 This Power MOSFET , /W RqJC RqJA TL 2.5 62.5 260 °C MTP2955V A Y WW G = Device Code = Location Code = Year = Work , . ORDERING INFORMATION Device MTP2955V MTP2955VG Package TO-220AB TO-220AB (Pb-Free) Shipping 50 Units/Rail , best overall value. 1 June, 2006 - Rev. 6 Publication Order Number: MTP2955V /D MTP2955V , Typ Max Unit Reverse Recovery Time http://onsemi.com 2 MTP2955V TYPICAL ELECTRICAL


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PDF MTP2955V O-220 MTP2955V/D
1997 - 25c1815

Abstract: ad 152 transistor AN569 MTP2955V
Text: VTM MTP2955V Designer's TMOS Power Field Effect Transistor P­Channel Enhancement­Mode , SIGMA 2 Motorola TMOS Power MOSFET Transistor Device Data MTP2955V TYPICAL ELECTRICAL , Waveform 6 Motorola TMOS Power MOSFET Transistor Device Data MTP2955V PACKAGE DIMENSIONS ­T­ , Z Motorola TMOS Power MOSFET Transistor Device Data 7 MTP2955V Motorola reserves the , MTP2955V /D Motorola TMOS Power MOSFET Transistor Device Data Motorola


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PDF MTP2955V/D MTP2955V 25c1815 ad 152 transistor AN569 MTP2955V
Not Available

Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP2955V /D SEMICONDUCTOR TECHNICAL DATA Designer’ ™ Data Sheet s TM OS V™ Power Field Effect Transistor MTP2955V P-Channel Enhancement-Mode , b3b?2SS D 0 tì 4 b b 7 04T Motorola TMOS Power MOSFET Transistor Device Data MTP2955V , S7D Motorola TMOS Power MOSFET Transistor Device Data MTP2955V PACKAGE DIMENSIONS NOTES , MTP2955V ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise noted) Characteristic Symbol Min


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PDF MTP2955V/D MTP2955V 21A-09
2006 - Not Available

Abstract: No abstract text available
Text: MTP2955V Preferred Device Power MOSFET 12 Amps, 60 Volts P-Channel TO-220 This Power MOSFET , PIN ASSIGNMENT 4 4 Drain IDM PD TJ, Tstg EAS TO-220AB CASE 221A STYLE 5 MTP2955V LLYWW 3 Source 2 Drain 1 Gate RJC RJA TL 2.5 62.5 260 °C/W °C MTP2955V LL Y WW = Device Code = Location Code = Year = Work Week ORDERING INFORMATION Device MTP2955V Package TO , : MTP2955V /D MTP2955V ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF


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PDF MTP2955V O-220 MTP2955V/D
1999 - MTP2955V

Abstract: transistor W66 WD62 7w66 D665 fairchild mosfets MTP2955V/SSP35n03
Text: MTP2955V * P-Channel Enhancement Mode Field Effect Transistor Features General Description -12 A, -60 V. RDS(ON) = 0.230 @ VGS = -10 V This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls , 9vrÃhqÃhshpvtÃprÃiwrpÃÃpuhtrÃvuÃvÃvsvphv ©1999 Fairchild Semiconductor Corporation MTP2955V Rev. A MTP2955V May 1999 6\PERO , : Pulse Width 300 µs, Duty Cycle 2.0% MTP2955V Rev. A MTP2955V (OHFWULFDO &KDUDFWHULVWLFV


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PDF MTP2955V* MTP2955V transistor W66 WD62 7w66 D665 fairchild mosfets MTP2955V/SSP35n03
2006 - Power MOSFET 12 Amps, 60 Volts p-Channel

Abstract: FET marking code AN569 MTP2955V MTP2955VG
Text: MTP2955V Preferred Device Power MOSFET 12 Amps, 60 Volts P-Channel TO-220 This Power MOSFET , . 1 2 MTP2955VG AYWW 3 1 Gate MTP2955V A Y WW G 2 Drain 3 Source = , Industries, LLC, 2006 Package MTP2955V *For additional information on our Pb-Free strategy and , for future use and best overall value. Publication Order Number: MTP2955V /D MTP2955V , MTP2955V TYPICAL ELECTRICAL CHARACTERISTICS TJ = 25°C 24 VGS = 10 V 9V 8V 20 7V 15


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PDF MTP2955V O-220 MTP2955V/D Power MOSFET 12 Amps, 60 Volts p-Channel FET marking code AN569 MTP2955V MTP2955VG
1999 - FDP7060

Abstract: NDP4060L da2aa CBVK741B019 EO70 MTP2955V TO220 Semiconductor Packaging 9852
Text: MTP2955V P-Channel Enhancement Mode Field Effect Transistor Features General Description -12 A, -60 V. RDS(ON) = 0.230 @ VGS = -10 V This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls , 9vrÃhqÃhshpvtÃprÃiwrpÃÃpuhtrÃvuÃvÃvsvphv ©1999 Fairchild Semiconductor Corporation MTP2955V Rev. A MTP2955V May 1999 , : Pulse Width 300 µs, Duty Cycle 2.0% MTP2955V Rev. A MTP2955V (OHFWULFDO &KDUDFWHULVWLFV


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PDF MTP2955V FDP7060 NDP4060L da2aa CBVK741B019 EO70 MTP2955V TO220 Semiconductor Packaging 9852
1996 - mgb20n40cl

Abstract: 340G Motorola Master Selection Guide MGP20N60 TO-220AB footprint MTP75N06HD MTB75n05hd MTD20N06HDL motorola bipolar transistor GUIDE 221A-06
Text: SINGLE FET (SO­8) FT - FET TRANSISTOR (SOT­223) MTSF - SINGLE FET (Micro8) MTDF - DUAL FET (Micro8 , in the low voltage TMOS transistor family. This new generation technology is currently referred to , MTD5P06V (4) 0.450 2.5 MTP5P06V 5 0.300 6 MTD2955V (4) 12 0.300 6 MTP2955V , (Insulated Gate Bipolar Transistor ) with integral active collector clamp and ESD gate protection and are , count and improved reliability by replacing resistors, diodes, a bipolar transistor and a MOSFET with


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PDF smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl 340G Motorola Master Selection Guide MGP20N60 TO-220AB footprint MTP75N06HD MTB75n05hd MTD20N06HDL motorola bipolar transistor GUIDE 221A-06
1996 - mgb20n40cl

Abstract: MGB20N40 MGB20N35CL motorola automotive transistor coil ignition MTD1N60E1 MGW12N120 MTSF3N03HD Motorola Master Selection Guide mgy30n60d MTD20N06HDL
Text: SINGLE FET (SO­8) FT - FET TRANSISTOR (SOT­223) MTSF - SINGLE FET (Micro8) MTDF - DUAL FET (Micro8 , in the low voltage TMOS transistor family. This new generation technology is currently referred to , MTD5P06V (4) 0.450 2.5 MTP5P06V 5 0.300 6 MTD2955V (4) 12 0.300 6 MTP2955V , (Insulated Gate Bipolar Transistor ) with integral active collector clamp and ESD gate protection and are , count and improved reliability by replacing resistors, diodes, a bipolar transistor and a MOSFET with


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PDF smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL motorola automotive transistor coil ignition MTD1N60E1 MGW12N120 MTSF3N03HD Motorola Master Selection Guide mgy30n60d MTD20N06HDL
2002 - NTD18N06

Abstract: BSS84L BSS138L mtd3055et4 transistor equivalent mtp2955v amplifier, sot-89, H1 ngb15n41 DL135 sot 223 marking code AH MMBF0202PL
Text: Dual FET (SO­8) · SF = Single FET (SO­8) · FT = FET Transistor (SOT­223) · MTSF = Single FET , (SO­8) · SF = Single FET (SO­8) · FT = FET Transistor (SOT­223) · MTSF = Single FET (Micro8) · , 125 MTP50P03HDL Single P­Channel 0.200 12 60 MTP2955V Single P­Channel 0.120 , Single N­Channel 0.081 30 178 NTP30N20 Single N­Channel 0.200 12 60 MTP2955V


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PDF SGD507/D Feb-2002 r14525 NTD18N06 BSS84L BSS138L mtd3055et4 transistor equivalent mtp2955v amplifier, sot-89, H1 ngb15n41 DL135 sot 223 marking code AH MMBF0202PL
1996 - mgb20n40cl

Abstract: MOTOROLA 136 DPAK MPIC2131FN MPIC2112DW MPIC2151D MTP75N06 mtd1p50e MMDF4N02 mc6530 MTB3N120E
Text: SINGLE FET (SO­ 8) MMFT - FET TRANSISTOR (SOT ­ 223) MTSF - SINGLE FET (Micro8) MTDF - DUAL FET , MTP3N50E 500 1 6 MTP2955V 30 0.5 16 C = 25°C 5 MTP4N50E 125 0.30 2.5 , °C TO­220 Package IGBT - Insulated Gate Bipolar Transistor Device 30 66 600 1200


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PDF MTD/MTP3055E MTD/MTP2955E MTP75N06HD O-220 O-220 O-247 O-264 OT-227B MMSF4P01HDR1 SG265/D mgb20n40cl MOTOROLA 136 DPAK MPIC2131FN MPIC2112DW MPIC2151D MTP75N06 mtd1p50e MMDF4N02 mc6530 MTB3N120E
1993 - transistor equivalent table chart

Abstract: 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941
Text: equivalent circuit for the transistor . Early attempts to adapt these techniques to power amplifier design , state power amplifier design through the use of large signal transistor input and output impedances , parameters to power amplifier design, the 2N3948 transistor was considered. A performance comparison was , pF Transistor output resistance 199 Ohms 92 Ohms 4.6 pF 5.0 pF 12.4 dB 8.2 dB , reactance. Note also that the transistor 's output resistances and power gains are considerably different


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PDF AN282A/D AN282A mid-1960 transistor equivalent table chart 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941
1998 - Philips high frequency bipolar transistor with Ft

Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bipolar transistor die layout RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Philips high frequency bipolar transistor NPN planar RF transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR
Text: power amplifier fundamentals 1.1.3 Transmitting transistor design width'). And, an equivalent to , , is published in data sheets as Cre: Transistor equivalent circuit At this point, it is useful to introduce a basic equivalent circuit of a bipolar RF transmitting transistor , and a few simple , CBE. Figure 1-12 shows a simple equivalent circuit of an RF transistor with load circuit. Note , . Fig.1-12 Simple equivalent circuit of a bipolar RF transmitting transistor . 1998 Mar 23


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PDF MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bipolar transistor die layout RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Philips high frequency bipolar transistor NPN planar RF transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR
1993 - motorola rf Power Transistor

Abstract: transistor equivalent table chart 2N6256 AN282A AN548A transistor equivalent table 2N5849 motorola 2N3948 transistor for RF amplifier 2N5849
Text: equivalent circuit for the transistor . Early attempts to adapt these techniques to power amplifier design , state power amplifier design through the use of large signal transistor input and output impedances , parameters to power amplifier design, the 2N3948 transistor was considered. A performance comparison was , transistor 's output resistances and power gains are considerably different for the two modes of operation , input and output impedance data for the transistor . The design method described in this report hinges


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PDF AN282A/D AN282A mid-1960 motorola rf Power Transistor transistor equivalent table chart 2N6256 AN282A AN548A transistor equivalent table 2N5849 motorola 2N3948 transistor for RF amplifier 2N5849
2N5995

Abstract: transistor ac 125 equivalent Arco 424 rca 632 92CS-17399 ARCO 0.1 Z VK 200-09 50N050
Text: Overlay Transistor For 12.5-Volt Applications in VHF Communications Equipment Features: â , n-p-n planar transistor featuring overlay emitter-electrode construction. This type features a hermetic , type is designed for stripline as well as lumped-constant circuits. This transistor is completely , derating. Li 1/2 turn No. 14 wire, 1/4 in. I.D. RFC - Z - 450 ii, Ferroxcube VK-200-09/3B or equivalent Ci 7-100pF, Arco 423 or equivalent C2 - 4-40 pF, Arco 422 or equivalent C3 ■0.1 /iF ceramic C4


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PDF 2N5995 175-MHz 92SS-3763R3 2N5995 transistor ac 125 equivalent Arco 424 rca 632 92CS-17399 ARCO 0.1 Z VK 200-09 50N050
h1208

Abstract: equivalent transistor c 495 92CS-223S5 radiosonde TA8340 NYTRONICS choke Nytronics relay 92CM-22389 transistor C4 168 H-1208
Text: RFC: choke, 0.12 ¿iH, Nytronics or equivalent L: 0.150-in. (3.8 mm) transistor lead length R1: 0.82 , -1208 750-mW, 1.68-GHz Oscillator Transistor Features: ■Emitter-ballasting resistors ■750 , lumped-element circuits Type 41038* is an epitaxial silicon n-p-n planar transistor with overlay multiple-emitter-site construction and emitter-ballasting resistors. Intended applications for this transistor include , . VCE0 21 V EMITTER-TO-BASE VOLTAGE .VEB0 3.5 V TRANSISTOR


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PDF H-1208 750-mW, 68-GHz 750-rnW TA8340. h1208 equivalent transistor c 495 92CS-223S5 radiosonde TA8340 NYTRONICS choke Nytronics relay 92CM-22389 transistor C4 168 H-1208
Narda 904N

Abstract: transistor et 455 sealectro AN3764 equivalent transistor rf 2N5470 TA7003 Narda Microwave narda rf 0/Narda 904N
Text: silicon n-p-n planar transistor employing the overlay emitter-electrode construction. It is intended for , operation in the common-base amplifier configuration. This transistor can be used in both large and , 2N5470 Power Transistor ," by G. Hodowanec, O.P. Hart, and H.C. Lee. »Formerly RCA Dev. Type No. TA7003 , TRANSISTOR DISSIPATION:.PT At case temperatures up to 25 °C . 3.5 W At case temperatures above , SILICON N-P-N "overlay" TRANSISTOR - T JEDEC TO-215AA For UHF/Microwave Power Amplifiers, Microwave


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PDF 2N5470 RCA-2N5470* 2N5470 2N5470, AN3764, 16-Detail Narda 904N transistor et 455 sealectro AN3764 equivalent transistor rf TA7003 Narda Microwave narda rf 0/Narda 904N
56-590-65/4A

Abstract: ferroxcube 56-590-65/4a rca 632 Arco 423 arco 404 2N5996 i7356 RCA Power Transistor 4 225 VK20009-3B
Text: -MHz Emitter-Ballasted Overlay Transistor Silicon N-P-N Device for 12.5-Volt Applications in VHF Communications , JS-6 RDF-3/JS-9 RDF-7. RCA type 2N59963 is an epitaxial silicon n-p-n planar transistor featuring , individual ballast resistance in each of the emitter sites for stabilization. The transistor is completely , equivalent Ci - 7-1 OOpF, Arco 423 or equivalent C2 - 4-40 pF, Aorco 422 or equivalent C3 -0.1 /jF ceramic C4 - 0.001 jiF feedthrough C5 - 62 pF silver mica Cq - 14-150pF, Arco 424 or equivalent C7 - 24-200pF


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PDF 2N5996 175-MHz 15-watt COLLECTOR50 V61R3 2N5996 56-590-65/4A ferroxcube 56-590-65/4a rca 632 Arco 423 arco 404 i7356 RCA Power Transistor 4 225 VK20009-3B
1994 - motorola transistor

Abstract: Using Linvill Techniques for R. F. Amplifiers 2N2221 MM1941 an238 motorola Using Linvill Techniques transistor for RF amplifier and mixer 2N3308 AN238 RF Transistor Selection
Text: where L = 43.5 µH. In this case CT = 25 pF. From the y­parameter equivalent of the transistor the , the products referenced may be discontinued. Transistor Mixer Design Using 2-Port Parameters , determine the potential stability of the transistor . The Linvill stability factor C is computed from the , is less than 1, the transistor is unconditionally stable. If C is greater than 1, the transistor is , is with both input and output terminals of the transistor open circuited. With no external feedback


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PDF AN238/D AN238 motorola transistor Using Linvill Techniques for R. F. Amplifiers 2N2221 MM1941 an238 motorola Using Linvill Techniques transistor for RF amplifier and mixer 2N3308 AN238 RF Transistor Selection
d 331 TRANSISTOR equivalent

Abstract: RCA-40934 rca transistor RCA 40934 transistor rca 40934 100 watt hf transistor 12 volt 7470 ic 300 watt hf transistor 12 volt VK20009-3B TO216
Text: N-P-N VHF/UHF Transistor 12.5-Volt Type For Class C Amplifier Applications Features: â , at 470 MHz RCA-40934* is an epitaxial silicon n-p-n planar transistor that features overlay , . COLLECTOR CURRENT: Continuous . TRANSISTOR DISSIPATION: At case temperatures up , €”Large-signal parallel equivalent input resistance vs. frequency. COLLECTOR SUPPLY VOLTAGE (Vcc)s'2 5 V CASE TEMPERATURE (TC)«25°C r4498RI Fig. 5—Large-signal parallel equivalent output


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PDF RCA-40934* d 331 TRANSISTOR equivalent RCA-40934 rca transistor RCA 40934 transistor rca 40934 100 watt hf transistor 12 volt 7470 ic 300 watt hf transistor 12 volt VK20009-3B TO216
1994 - Y11E

Abstract: Using Linvill Techniques MM1941 transistor for RF amplifier and mixer small signal transistor MOTOROLA RF Transistor Selection NPN transistor 2n2221a AN238 power AN238 2N3308
Text: Transistor Mixer Design Using 2­Port Parameters Prepared by: Ernest Klein Applications Engineering , may be used to determine the potential stability of the transistor . The Linvill stability factor C , than 1, the transistor is unconditionally stable. If C is greater than 1, the transistor is , is with both input and output terminals of the transistor open circuited. With no external feedback, an unconditionally stable transistor will not oscillate under any combination of load and source


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PDF AN238/D AN238 Y11E Using Linvill Techniques MM1941 transistor for RF amplifier and mixer small signal transistor MOTOROLA RF Transistor Selection NPN transistor 2n2221a AN238 power AN238 2N3308
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