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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor da 307 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor BC 308

Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Text: MPN SILICON TRANSISTOR , EPITAXIAL PLANAR rRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL * BC 307 BC , Collector-emitter breakdown voltage Tension da claquage collecteur-émetteur lç =-2 mA lB =0 V(BR)CEO BC 307 BC 308 , voltage Tension basa-émetteur Iq =-2 mA VCE =-5V VBE -0,55 0,62 -0,7 \ *The transistor BC 307 is grouped in two classes of OC gain VI - A La transistor BC 307 est subdivisé en deux classes de gain , 308 ast subdivisé en trois classes da gain statique V! - A - B The transistor BC 309 is grouped in


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PDF BC307 CB-76 307ast 308ast transistor BC 308 transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
2001 - T03A

Abstract: TO-202 transistor mkt 344 Cu50 MTL 728 TRANSISTOR BC 136 V84A BD 669 M03A MS-026-bcd
Text: Package Type Small Outline Transistor (SOT-223) Mkt Dwg JEDEC Spec Wide Nom. (mils) Long , ) Small Outline Transistor (SOT-23) MA04A TO-261-AA 140 256 CU 90 287 264 MA05C , Pitch (mils) Board Area Max. (mils) (X) Max. (mils) (Y) None 208 244 25 307 , 244 197 MSA16 None 208 244 25 307 249 MSC16 None 173 196 25.6 , None 220 307 25.6 307 311 MTC24 MO-153-AD 173 307 25.6 252 311


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2000 - MS-026-bcd

Abstract: vjp44a MO-16B-AB ad 153 transistor cu50 transistor BC 185 TF11B TA11B mkt 344 transistor bd 905
Text: Data TABLE 1. Plastic Package Dimensional Data Body Size Package Type Small Outline Transistor , Pitch (mils) Board Area Max. (mils) (X) Max. (mils) (Y) Small Outline Transistor (SOT , None 433 626 25.6 563 630 MSA14 None 208 244 25 307 249 MSC14 , None 208 244 25 307 249 MSC16 None 173 196 25.6 264 205 MQA20 , MO-153-ACT 173 256 25.6 252 260 MTB24 None 220 307 25.6 307 311


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PDF MS011798 MS-026-bcd vjp44a MO-16B-AB ad 153 transistor cu50 transistor BC 185 TF11B TA11B mkt 344 transistor bd 905
ANA 618

Abstract: voltage regulator ana 618 MZ2360 mz2361 IN4830 IN4157 MZ-2361 IN4453 IN4829 IN5179
Text: Micro semi Corp. The diode ci perls SANTA ANA, CA SC OTTS DA LE, AZ For more information call: (602) 941-6300 IN4156, IN4157, IN4453, IN4829, IN4830, IN5179 STABISTORS Also, Tight Tolerance , , level shifters in transistor logic, meter protectors, and low voltage regulators. For computer circuit , 2.14 2.36 2.47 2.71 2.80 3.07 3.16 3.52 60 300 30 4 MPD400A 30 50 30 90 1.82 2.01 2.14 2.36 2.47 2.71 2.80 3.07 3.16 3.52 800* - 40 4 •«MZ2360 lO^A - 5.0 - - - - - - - 0.63 0.71 - - - - - 1 *MZ2361


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PDF IN4156, IN4157, IN4453, IN4829, IN4830, IN5179 MPD100 MPD400A MZ2360 MZ2361 ANA 618 voltage regulator ana 618 mz2361 IN4830 IN4157 MZ-2361 IN4453 IN4829
ir9331

Abstract: simple 19v power supply IR9331N NOKA
Text: , longterm intergration, linear frequency modulation or ©modulation, and many other functions. ■Features , performed on test circuit 2. *2 Non-linearity error is defined as the ©viation from VLn X (10kHz/â , transistor (Tout), while the Q turns off the reset transistor (TrE). From this moment on Cr will continue to , -i—!-—r 1 1 i i ii ri ri i i i i i U-l i r Vr/c Fout n n ! ' I ! i_ i SHARP- Ti_Ti 307 SHARP ELEK


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PDF 07cia IR9331/IR9331N T-13-13-03 30ppm/Â 10kHz 100kHz IR9331) IR9331N) ir9331 simple 19v power supply IR9331N NOKA
catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente equivalent of transistor bc212 bc 214 transistor A2222 SESCOSEM transistor BFw-11 terminals Brochage BCW91 equivalente transistor BC 141
Text: 75 ►BC 109 297 ►BC 556 409 BD 138 TPu 75 ►BC 140 307 ►BC 557 409 BD 142 TPu 75 ►BC141 307 ►BC 558 409 BD 157 TPu 75 ►BC 160 313 ►BC 559 409 BD 158 TPu 75 ►BC 161 313 ►BC , , B, C TPu 75 ►BC 307 367 ►BCW 92 A, B 433 BD 301, A, B TPu 75 ►BC 308 367 ►BCW 93 A, B , -39 750 40 40-100 100 1 1000/100 50 307 BC 140 cl.10 TO-39 750 40 60-160 100 1 1000/100 50 307 BC 140 cl. 16 TO-39 750 40 100-250 100 1 1000/100 50 307 BC 141 cl .6 TO-39 750 60 40-100 100 1 1000/100 50


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2004 - SmD TRANSISTOR a42

Abstract: TRANSISTOR BC 136 TRANSISTOR BC 157 transistor BC 945 TRANSISTOR BC 187 TRANSISTOR BC 413 SNA10A MO-220-WGGD-2 MO-220-WKKD-2 pdf on BC 187 TRANSISTOR
Text: Transistor (SOT-223) MA04A JEDEC Spec Wide Nom. (mils) Long Nom. (mils) Lead Frame Mt'l , 818 49 Small Outline Transistor (SOT-23) Super-SOT 140 264 SC70 MAA05A None , Board Area Max. (mils) (X) 307 Max. (mils) (Y) MSA14 None 208 249 MSC14 None , 208 244 25 307 249 MSC16 None 173 196 25.6 264 205 MQA20 MO , -153-ACT173 256 25.6 252 260 MTB24 None 220 307 25.6 307 311 MTC24 MO


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Not Available

Abstract: No abstract text available
Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES HIGH OUTPUT POWER: 0.7 W 2.0 W LOW IM DISTORTION HIGH LINEAR GAIN: HIGH EFFICIENCY: Class A Class AB N E L 2 0 0 1 0 1 -2 4 OUTLINE , _ NEL200101-24 is an NPN Silicon Epitaxial Microwave Power Transistor designed for 1.93 to 1.99 GHz, 24 Volt , 1.31 1.34 1.34 1.35 1.39 1.39 1.42 1.44 1.46 1.51 1.51 1.58 1.63 K MAG1 (dB) 30.7 28.3 25.0 21.1 19.1 , : M A G« -Iplj- (k ±VK 2- 1 ). W h enKs 1, M A Gis u n d e fin e da n dM SGvalu es areu sed .M SG, K


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PDF NEL200101-24 NEL2001 1N4153
Not Available

Abstract: No abstract text available
Text: ERICSSON í PTB 20245 35 Watts, 2 . 1 - 2 . 2 GHz P C N / P C S P o w e r Transistor Description T h e 20 24 5 is a cla ss AB, NPN com m on em itter RF p o w e r tra n sisto r in tended for 26 V dc operation from 2.1 to 2.2 G H z fre q u e n cy band. Rated at 35 w a tts m inim um ou tput po w e r for PEP , of test) w - - I m p e d a n c e Da t a Frequency GHz R Z Source ]X R Z Load jx -5.60 -5.07 -4.10 2.10 2.15 2.20 3.36 3.62 3.9 4 -5.56 -4.22 - 3.07 4.0 0 3.60 3.25


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PDF
Not Available

Abstract: No abstract text available
Text: , differential amplifier, output control transistor and voltage setting resistor of high accuracy and low , 3.50 3.90 4.00 4.50 5.00 6.00 Max. 2.25 2.67 2.87 3.07 3.27 3.37 3.57 4.00 4.10 4.60 5.10 6.25 Output , Supply voltage fluctuation elimination ratio PSRR - -4 0 - dB 5 EPSON · SCI7810Y da , 3.07 5.0 0.46 +100 Unit V V pA V ppm/ °C Input stability - 0.1 - % /V Load stability


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PDF PF849-01 SCI781OY
transistor DA3 307

Abstract: DA3 307
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-28500-5E AD/ DA CONVERTER MB40166/M B40176 1-CHANNEL 6-BIT AD/ DA CONVERTER WITH CLAMP CIRCUIT The Fujitsu MB40166 and MB40176 are low power 6-bit AD/ DA , 12 17 d A.GND d 13 16 d VCCD ADCK d 14 15 d D .G N D Da i 1 19 , (LSB) Ddi DD2 (MSB) DACK d 28 d l D.GND d 12 17 Da i d 13 16 ADCK , x V cca (V). Da i to DA6 0 Digital signal outputs. ( Da i : MSB, Da6: LSB) Clamp voltage


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PDF DS04-28500-5E MB40166/M B40176 MB40166 MB40176 MB40176 DG2S71S transistor DA3 307 DA3 307
1997 - of mosfet BUZ 384

Abstract: BUZ MOSFET thyristor capacitive discharge ignition transistor CF leistungstransistoren BUZ 338 tig welding siemens igbt GS Dioden SIEMENS MOSFET BUZ
Text: , überschritten werden, da sonst eine Beschädigung auftreten kann, und der Transistor dann nicht mehr steuerbar , . In the case of an N-channel transistor the n+ substrate serves as the carrier with the drain , region. The source plating covers the entire structure and connects individual transistor cells of the , Aufbau eines N-Kanal-SIPMOSTransistors Figure 4 Structure of an N Channel SIPMOS Transistor Die , base-emitter junction of the parasitic vertical n+pnbipolar transistor . This is essential in order to prevent


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PDF MIL-STD-883, MIL-STD-883; of mosfet BUZ 384 BUZ MOSFET thyristor capacitive discharge ignition transistor CF leistungstransistoren BUZ 338 tig welding siemens igbt GS Dioden SIEMENS MOSFET BUZ
npn 1000V 100a

Abstract: D7ST1008 1S697 D7ST100805 D7ST1010 D7ST1012 50c020
Text: part number you desire from thé table—i.e. a D7ST100805 describes, a disc package transistor rated , . B .121 .171 3.07 4.34 4>Bi .097 .122 .246 3.10 , 307 .317 7.80 8.05 D 1.824 1.99 46.3 50.55 , , lc, (AMPERES) -pOülERfc-X INI . ~ ~ Tfl £~|72T4b21 DOOEböM Q mumrex Tentative Powerex, Inc


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PDF 7214t21 T-33-15 D7ST100& D7ST1010, D7ST1012 Amperes/1000 D7ST1008/1010/1012, D7ST1008/1010/1012 D7ST1012 npn 1000V 100a D7ST1008 1S697 D7ST100805 D7ST1010 50c020
MA6216

Abstract: MA6116
Text: uses a 6 transistor cell and has full static operation with no clockortimingstrobe required. Address , , orafter, the WE b w transifon, the output remains in the higfi impedance state. 5. DA TA O U T is in the active state, so DATA IN m u stn o tb e in opposing state. 6. DA TA O U T is Ihe write data of the current cycle, if selected. 7. DA TA O U T is Ihe read data of the next address,if selected. 8. T e lw l must be met to prevent memory corruptbn. 9. O E is low. (If OE is high Ihe DA TA O U Trem ainsin Ihe


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PDF DS3582-2 MA6116 MA6216 110ns MA6116) MA6216) 37bflS22 MA6116 MA6216 x6116xxxxx
2008 - simulink model for kalman filter in matlab

Abstract: matlab code source of extended kalman filter multimedia projects based on matlab extended kalman filter matlab codes driver assistance system altera fpga da altera estimation with extended kalman filter EXM32 PC MOTHERBOARD SERVICE MANUAL Park transformation
Text: disk drive (HDD) interface, two thin-film transistor (TFT) LCD connections (one for the DA subsystem , development environment for all driver assistance ( DA ) requirements using Altera® FPGA and HardCopy® ASIC , Development Platform The DA development environment (Figure 2 ) is based on the Altera platform ASSP , Template DA projects usually start with algorithm development on PCs and use test videos to evaluate the , subsystem and the DA processing subsystem. Each subsystem has its own independent DDR2 memory interface


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1999 - blw 64 transistor

Abstract: bhw 49 transistor P20P2 5P47 0-P107 M37902FJMHP M37902FHMHP M37902FGMHP M37902FEMHP M37902FCMHP
Text: converter . 8-channel inputs 8-bit D-A converter , D-A1 converter (8) UART1 (9) MD1 Data Address Register DA (24) Bus Interface Unit (BIU , -bit successive approximation method ! 1 (8 channels) D-A converter 8-bit ! 3 Watchdog timer 12-bit ! , Analog power supply input - Power supply input pins for the A-D converter and the D-A converter , the reference voltage input pin for the A-D converter and the D-A converter. P00­P0 7 I/O port


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PDF M37902F8MHP, M37902FCMHP, M37902FEMHP M37902FGMHP, M37902FHMHP, M37902FJMHP 16-bit M37902FxM 00FFC016 blw 64 transistor bhw 49 transistor P20P2 5P47 0-P107 M37902FJMHP M37902FHMHP M37902FGMHP M37902FEMHP M37902FCMHP
1999 - 9 BJE 53

Abstract: No abstract text available
Text: converter . 8-channel inputs 8-bit D-A converter , Interface Unit (BIU) Program Address Register PA (24) MD1 Data Address Register DA (24 , timers P0­P2, P4­P8, P10, P11 P3 TA0­TA4 TB0­TB2 Serial I/O A-D converter D-A converter Watchdog timer , be left open. Power supply input pins for the A-D converter and the D-A converter. Connect AVcc to , D-A converter. s In single-chip mode Port P0 is an 8-bit I/O port. This port has an I/O direction


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PDF M37902F8MHP, M37902FCMHP, M37902FEMHP M37902FGMHP, M37902FHMHP, M37902FJMHP 16-BIT M37902FxM 00FFC016 9 BJE 53
BLX14

Abstract: vhf power transistor 50W "class AB Linear" hf philips Fxc 3 b hf amplifier 3h1 4322-020 SOT-55 50w CLASS D amplifier 75W HI FI AMPLIFIER 0/vhf power transistor 50W
Text: TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, AB and B operated transmitting , Material Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE H.F./V.H.F. power transistor , Respective Manufacturer N AMER PHILIPS/DISCRETE H.F./V.H.F. power transistor SB blE D ■Q02^SbS bTfl , relative to that at 25 °C is diminished by -40 mW/K. The transistor is designed to withstand a full load , Its Respective Manufacturer N AMER PHILIPS/DISCRETE bTE D H.F./V.H.F, power transistor 5E bbsa^i


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PDF BLX14 70ues BLX14 vhf power transistor 50W "class AB Linear" hf philips Fxc 3 b hf amplifier 3h1 4322-020 SOT-55 50w CLASS D amplifier 75W HI FI AMPLIFIER 0/vhf power transistor 50W
current mirror

Abstract: rtd i2c transistor da philips shunt trip datasheet AM79489
Text: the voltage on DA . This results in no current flowing in transistor C and the device appearing to , still indicates `ON HOOK'. From this point, if DA swings sufficiently negative, then transistor A turns , Applications of the Zarlink SLIC Devices SLIC DA /DB Internal Circuit Application Note APPLICATION NOTE Several of Zarlink's SLIC products offer DA /DB pins that allow external input signals to be , B (RING) - CRT2 R3 A (TIP) DA VBAT or VCC (RINGX) RF2 BGND KR DP


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PDF 90VAC current mirror rtd i2c transistor da philips shunt trip datasheet AM79489
2013 - Not Available

Abstract: No abstract text available
Text: equipment FUNCTIONAL BLOCK DIAGRAM €“/AIN2 LDAC/AIN3 ANALOG MUX ADC THIGH LIMIT , transistor = 2N3906 TA = 0°C to 85°C TA = 0°C to 85°C Equivalent to 0.25°C High level Low level , AIN1 and AIN2 are selected on Pad 8 and Pad 9 D+ and ˆ’ are selected on Pad 8 and Pad 9 D+ and ˆ’ are selected on Pad 8 and Pad 9 6.41 400.84 21.77 3.07 Internal Temperature ms µs ms , Pad 8 and Pad 9 AIN1 and AIN2 are selected on Pad 8 and Pad 9 D+ and ˆ’ are selected on Pad 8 and


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PDF ADT7517-KGD 10-bit 10-bit, ADT7517-KGD-DF C-19-1 4-18-2012-A D10686-0-8/13
Not Available

Abstract: No abstract text available
Text: Order this data sheet MOTOROLA TECHNICAL DATA by M R F10120H/D SEMICONDUCTOR MRF10120H* MHz Microwave Power Transistor 120 Watts NPN 960-1215 MHz .ill! Designed for long pulsed common base amplifiers. Guaranteed Performance at 1215 MHz - Output Power = 120 Watts Peak - Gain = 8.0 dB Min 100 , - 36 V f MHz 960 1025 1090 1150 1215 ZOL* OHMS 5 .3 3 -j1 .37 4.59 - j0. 307 3.74 - J0.612 2.43 - j0 , TOLERANCING PER A M C IY 1 dA MI0 ft9 2. CONTROLUNG DIMENSION: INCH. 3. 366001 OBSOLETE, NEW STANDARD


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PDF F10120H/D MRF10120H* MRF10120HX MRF10120HXV MRF10120HS MRF10120HC 355C-02 1PHX31251-1 MRF10120H/D
ATQ203

Abstract: 4076B Q252T
Text: Ptot Total power dissipation (per package) Dissipation per output transistor 200 mW for T0p= full , dual in-line ceramic package, frit-seal HCF 4076 BM for plastic micropackage 307 - 2/82 1802 Câ , SEMICONDUCTOR CORP 2112 €”07 630 lowered by ICminer.com Electronic-Library Service 'GopyRight 2003


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PDF 0014S70 f-i-b-09-os 4076B ATQ203 4076B Q252T
4076B

Abstract: 4076 14016b HCC4076BD cmos 4076 HCF4076BF
Text: (per package) 200 mW Dissipation per output transistor 100 mW for Top= full package-temperature , in-line ceramic package, frit-seal HCF 4076 BM for plastic micropackage 307 2/82 This Material , 100 50 15 80 40 tw Reset pulse width 5 120 60 ns 10 50 25 15 40 20 tsetup Da ,a


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PDF 407BB 4076B 16-lead 4076B 4076 14016b HCC4076BD cmos 4076 HCF4076BF
8050 transistor

Abstract: SNC80000 NPN transistor 8050 SNC82000 200PF capacitor free transistor y2 16.384MHZ SNC88000 p0/p1 connectors SNC80
Text: , Power Down Mode. 5. D3(Flash), D4(ON) : With Power, Operating Mode. (Download or Free Run Mode) DA Output: DA Q1, R8, SPK1 Q2, R9, SPK2 (1). Connect Q1, Q2 to NPN transistor . (ex: 8050) (2). , High Clock RC, Low Clock Crystal and DA Output .13 Example3: 4.5V with High Clock RC, Low Clock RC and DA Output .14 FLASH BOARD PLUS KEYBOARD , USB ICE BOARD DA Output Power Select LED Status DC7.5V Adapter I/O BUS RESET


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PDF SNC80000 8050 transistor NPN transistor 8050 SNC82000 200PF capacitor free transistor y2 16.384MHZ SNC88000 p0/p1 connectors SNC80
2009 - 6R190C6

Abstract: smd TRANSISTOR code marking PR smd transistor marking da IPP60R190C6 EL series SMD transistor TRANSISTOR marking ar code 6r190 smd transistor marking 1 da
Text: el im in ar y da ta e sh et 14 Rev. 1.0, 2009-06-19 600V CoolMOSTM C6 Power Transistor , /inches el im in ar y da ta e sh et 15 Rev. 1.0, 2009-06-19 600V CoolMOSTM C6 Power Transistor , MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOSTM C6 Power Transistor IPx60R190C6 Data Sheet Rev. 1.0, 2009-06-19 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOSTM C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6


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PDF IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 6R190C6 smd TRANSISTOR code marking PR smd transistor marking da EL series SMD transistor TRANSISTOR marking ar code 6r190 smd transistor marking 1 da
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