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Part Manufacturer Description Datasheet Download Buy Part
LT1991AIDD#TR Linear Technology LT1991 - Precision, 100µA Gain Selectable Amplifier; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT1991IDD#TR Linear Technology LT1991 - Precision, 100µA Gain Selectable Amplifier; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT1991CDD#TRPBF Linear Technology LT1991 - Precision, 100µA Gain Selectable Amplifier; Package: DFN; Pins: 10; Temperature Range: 0°C to 70°C
LT1991IMS#TRPBF Linear Technology LT1991 - Precision, 100µA Gain Selectable Amplifier; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C
LT1991ACDD Linear Technology LT1991 - Precision, 100µA Gain Selectable Amplifier; Package: DFN; Pins: 10; Temperature Range: 0°C to 70°C
LT1991ACDD#PBF Linear Technology LT1991 - Precision, 100µA Gain Selectable Amplifier; Package: DFN; Pins: 10; Temperature Range: 0°C to 70°C

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transistor d 1991 ar

Abstract: No abstract text available
Text: bbS3T31 QD3T73S flfl3 « A P X Product specincation VHF power transistor September 1991 m , VHF power transistor BLY91C/01 N AUER PHILIPS/DISCRETE b'iE D APPLICATION INFORMATION RF , b'lE D N AUER P H ILIP S / D IS C R E TE ■b b S B 'm 00 2T 7 22 074 H A P X Product specification Philips Semiconductors BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile


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PDF BLY91C/01 T122F1 OT122F bb53131 transistor d 1991 ar
Philips 4312 020

Abstract: ferroxcube wideband hf choke transistor 4312 BLT53 UHF POWER UHF POWER TRANSISTOR philips transistor philips capacitor 470 philips Trimmer 60 pf transistor d 1991 ar
Text: load mismatch. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-iead SOT122 D , INTERNATIONAL bSE D UHF power transistor BLT53 'T (GHz) y , PHILIPS INTERNATIONAL UHF power transistor 7110fl2b 00b2b4S 757 bSE D IPHIN Product specification , Philips Semiconductors 711002b PHILIPS INTERNATIONAL UHF power transistor □□bEbm bSE , domestic waste. PIN CONFIGURATION F.ÍEB012 e Fig.1 Simplified outline and symbol. May 1991 89 This


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PDF 711002b BLT53 OT122 OT122D MCD200 MCD20 Philips 4312 020 ferroxcube wideband hf choke transistor 4312 BLT53 UHF POWER UHF POWER TRANSISTOR philips transistor philips capacitor 470 philips Trimmer 60 pf transistor d 1991 ar
Not Available

Abstract: No abstract text available
Text: values. Fig 11 Definition of transistor impedanoe. September 1991 *7 003Slbfi TIE Philips , Product specification Ph ilip * S em iconductors BLU86 UHF power transistor F EA T U R ES • SM D encapsulation Q U ICK R E F E R E N C E DATA R F performance at Ts S 60 “C in a , temperature profile • Gold metallization ensures excellent reliability. M O D E OF OPERATION f , temperature at soldering point of collector tab. NPN silicon planar epitaxial transistor encapsulated in a


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PDF BLU86 OT223 bbS333 003SlbT
capacitor 104 PF disc

Abstract: transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331
Text: Material Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE UHF power transistor blE D â , Manufacturer N AMER PHILIPS/DISCRETE UHF power transistor LIE D ■bbS3*i31 0020038 4S5 MAPX BLU30/28 ri , TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the , toxic. The device is entirely safe provided that the internal BeO disc is not damaged. January 1991 , D bb53T31 00HÛÛ33 T43 ■APX A RATINGS Limiting values in accordance with the Absolute


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PDF BLU30/28 BLU30/28 OT119) capacitor 104 PF disc transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331
transistor d 1991 ar

Abstract: BLY87 BLY87C
Text: N AMER PHILIPS/DISCRETE LTE D bbsa^i GüSTb?4 STI «APX BLY87C/01 I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile and military transmitters with a supply voltage of 13,5 V, The transistor is resistance stabilized and is guaranteed to , . power transistor bTE D ■bbSBTBl 00ETb7b 3bM HIAPX BLY87C/01 CHARACTERISTICS Tj = 25°C unless , . power transistor LIE D m bb53'ì31 DOE^bfiO 0=13 HIAPX BLY87Ü/01 X OPERATING NOTE Below 70 MHz a


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PDF BLY87C/01 transistor d 1991 ar BLY87 BLY87C
transistor d 1991 ar

Abstract: D 1991 AR BUK439-60A CMS transistor 9T TRANSISTOR BUK439
Text: 0 ta d ( t; .5 P 7U ar rr ai et 77 It 9t March 1991 494 , Philips Components Data sheet status Preliminary specification date of issue March 1991 BUK439-60A PowerMOS transistor T- 39-/5 PHILIPS INTERNATIONAL SbE D ?llGfl2b QDM4SS4 flb? «PHIN GENERAL DESCRIPTION , €”39—15 Preliminary specification PowerMOS transistor PHILIPS INTERNATIONAL SbE D BUK439-60A 711002b 004455b b3T â , March 1991 492 Philips Components T—39—15 Preliminary specification PowerMOS transistor PHILIPS


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PDF BUK439-60A 711002b Q044SSÃ transistor d 1991 ar D 1991 AR CMS transistor 9T TRANSISTOR BUK439
BU508A

Abstract: BU508D transistor d 1991 ar T1185 philips bu508a transistor Bu508A
Text: N AMER PHILIPS/DISCRETE blE D ■D02A2b4 DEI BU508A BU508D SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection , half-sinewave voltage (curve tracer). 74 December 1991 Ar This Material Copyrighted By Its Respective Manufacturer N AUER PHILIPS/DISCRETE Silicon diffused power transistor LIE D ■^53^31 DDEÖEbb ITH BU508A , December 1991 73 This Material Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE


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PDF D02A2b4 BU508A BU508D OT93A BU508D BU508D) transistor d 1991 ar T1185 philips bu508a transistor Bu508A
TDA8380

Abstract: tda8380 power supply
Text: connected to pin 12 (R 12) ar | d is defined by the ratio R g /R l2 - The minimum supply voltage (pin 5) set , transistor d V / d t is internally limited to reduce interference. Care should be taken w ith the external , 1.4 > 6/6 28.5 100 I6/6.3 100 30 - V V mA kHz kHz 10` 6 /K f0 'O I d f/ d T March 1991 849 , Protected against damage as a result o f a short-circuited high-voltage transistor RC oscillator w ith synchronization input QUICK REFERENCE D ATA - parameter Supply voltage Supply current O utput pulse


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PDF TDA8380 TDA8380 tda8380 power supply
BA570

Abstract: agc diode 734
Text: TEA1065 control transistor (see Fig.4; rds = 3V gs/3 I d at V gs = Vos). Current regulator mode The , DC resistance of the subscriber line (Rune) ar | d the DC voltage on the subscriber set (see Fig-4). If , control transistor and I d o c is the current sunk by pin DOC (I d o c = 0 in the voltage regulator m ode , tap R13 Fig.13 Internal current lim iting transistor . June 1991 744 ps oem iconcuc:ors , amplifier. Voltage gain is defined as Gv = 20 Log h V Vi I. June 1991 750 June 1991 fr o m d ia l


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PDF TEA1065 TheTEA1065 theTEA1065, BA570 agc diode 734
smd transistor 331

Abstract: TRANSISTOR SMD m3a philips capacitor 16v smd transistor w J 3 58 smd transistor 54 JI SMD Transistor 1f ptfe trimmer philips 100 pf smd transistor ats I5 smd transistor 4312 020 36640
Text: specification date of issue January 1991 ■bb53T31 002ÖÖM7 M3Ö MARX UHF power transistor FEATURES â , metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated , specification UHF power transistor BLU56 LIMITING VALUES In accordance with the Absolute Maximum System (IEC , (DC) from junction to soldering point 35 K/W January 1991 200 This Material Copyrighted By Its , power transistor N A HEP PHILIPS/DISCRETE blE ]> BLU56 CHARACTERISTICS SYMBOL PARAMETER CONDITIONS


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PDF BLU56 bb53T31 OT223 OT223 MC3027 smd transistor 331 TRANSISTOR SMD m3a philips capacitor 16v smd transistor w J 3 58 smd transistor 54 JI SMD Transistor 1f ptfe trimmer philips 100 pf smd transistor ats I5 smd transistor 4312 020 36640
voltage stabilizer winding data

Abstract: No abstract text available
Text: April 1991 946 Philip s S e m ico n du cto rs L in e a r P ro d u cts P ro d uct specification , -2 30 -2 2 1.4 4.0 1.33 39 4.3 - April 1991 947 P h ilip s S e m ico n d u cto rs L in e , .1 Block diagram. April 1991 948 P h ilip s Se m ico n du cto rs L in e a r Pro d ucts Product , example. April 1991 949 P h ilip s S e m ico n du cto rs L in e a r Pro d ucts P ro d uct , transistor switch directly at its emitter to ensure a large reverse bias SO AR and fast switching. The base


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PDF TEA1088T ULA331 voltage stabilizer winding data
transistor A968

Abstract: a968 BLV101B JBC223 capacitor philips ll BLV101A Philips MBB power transistor 00L3117 101B
Text: D IPHIN Product specification BLV101A/BLV101B FEATURES • High input and output impedances , !.!3B0!2 e Top view MSB053-1 Fig.1 Simplified outline and symbol. November 1991 587 This Material Copyrighted By Its Respective Manufacturer Philips Serniconductorsbi E D □ 7110fl2t. 0Ob31OR OTI ■P HIN , junction to mounting base (DC) 1.75 K/W Riti mfa-h from mounting base to heatsink 0.3 K/W November 1991 588 This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors^ SE D O 711D85b


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PDF 3b310fi BLV101A/BLV101B OT273 OT273 BLV101B MCA973 BLV101B KCA97Ã transistor A968 a968 JBC223 capacitor philips ll BLV101A Philips MBB power transistor 00L3117 101B
westlake capacitors

Abstract: No abstract text available
Text: data sheet M AR g 1991 CTO-565 High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz June, 1991 Features Applications • • • • • • • • • • • • 1 Watt Output Power Low Current: 450 mA High Gain: 19.5 dB Typ 18 Volt Bias Unconditionally , . 300 400 Frequency, MHz 45°C/W Active Transistor Power D is s ip a tio n , D 5 7 9 0 A 50 CL 40 Ä 60 (L 1 50 T> 30 100 200 300 400 500 600


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PDF CTO-565 ADS-1758/6-91 westlake capacitors
computer smps circuit diagram

Abstract: SMPS CIRCUIT DIAGRAM AC to DC smps circuit diagram lg LED monitor circuit diagram computer smps repairing circuit diagram LG monitor circuit diagram computer smps repairing TEA1088T computer AC to DC smps circuit diagram 6 pin ic for lg direct drive smps
Text: stabilizer/ slow start April 1991 3 PHILIPS INTERNATIONAL MIE D 711005b 00212b? T E3PHIN T , circuit. Figure 8 gives an application example. April 1991 4 PHILIPS INTERNATIONAL 41E D El 711002b , ratio) April 1991 6 PHILIPS INTERNATIONAL MIE D ' D 7HDfl2t 0021270 T SPHIN T-5Ô-U-31 Product , required frequency is set with R = 36 k£2 and C = 560 pF. April 1991 7 PHILIPS INTERNATIONAL MIE D H , i-L. —r J— vLOW VREG ill Fig.5 Operational cycles of the SMPS charger system. April 1991 9


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PDF 0G212b4 computer smps circuit diagram SMPS CIRCUIT DIAGRAM AC to DC smps circuit diagram lg LED monitor circuit diagram computer smps repairing circuit diagram LG monitor circuit diagram computer smps repairing TEA1088T computer AC to DC smps circuit diagram 6 pin ic for lg direct drive smps
LM139

Abstract: LM139A LM139 APPLICATIONS LM139A/LM139
Text: LM139 A/LM139 FEATURES • Wide single supply voltage range 2.0Vdc to 36VDO °r dual supplies  , , DTL, ECL, MOS and CMOS logic systems APPLICATIONS • A/ D converters • Wide range VCO • MOS , 0005245 bTl December 3, 1991 EQUIVALENT CIRCUIT (One Comparator Only) 444 853-0280 04848 This , parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the , table may impair the useful life of the device. December 3, 1991 445 7110fl2b 0D6524b 530 This


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PDF LM139 /LM139 36VDO 18Vdc 250mV LM139A LM139 APPLICATIONS LM139A/LM139
Philips SPA 1100

Abstract: contactless Functional Specification
Text: state instabilities of RES, VC0M P has a hysteresis. The hysteresis Is expressed by VcOMP(HIGH) ar | d V , under Integrated circuits, IC18 July 1991 Philips Semiconductors PHILIPS PHILIPS Philips , n-channel MOS transistor is conducting current. The peak-to-peak amplitude of the input voltages VA _ B , transistor Typical values for forward voltages of the individual rectifiers, referring to a forward current of I = 10 mA, are: V fd ,de = 0 .7 V 0 2 V V ¥,f transistor = Current values: limited by


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PDF UBB1000 UBB1000 83C852) Telex35000 ADS89 Philips SPA 1100 contactless Functional Specification
Ferroxcube 3C8

Abstract: sawtooth generator Ferroxcube 4229 core 3c8 Current-Fed Push-Pull Converter EC35 bobbin Philips 150C1 S333 S332 S331
Text: Voltage forced mode +18 V Is Current fed mode 30 mA Output transistor (at 20 - 30V max) tc Output , Storage temperature range -65 to+150 °C 711Qfl2b 00Ô533D 051 June 11, 1991 533 853-0297 02838 Philips , _TL 711002t. 00fi5331 TTfl June 11, 1991 534 Philips Semiconductors Military Linear Products Product , = -7mA 7.8 8.4 8.8 V av2/at Temperature coefficient 200 ppm/°C Oscillator Section ír , 0.400 0.480 0.560 V 711002b 00ÖS332 T24 June 11, 1991 535 Philips Semiconductors Military Linear


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PDF 7110fl2b 711002b Ferroxcube 3C8 sawtooth generator Ferroxcube 4229 core 3c8 Current-Fed Push-Pull Converter EC35 bobbin Philips 150C1 S333 S332 S331
l165

Abstract: L165 motor operational amplifier l165 amplifier l165 SGS-Thomson L165V 12v DC SERVO MOTOR CONTROL circuit 2A L291 L165V SGS power amplifier bidirectional speed control of dc motor
Text: Parameter Supply voltage Upper power transistor VCE Lower power transistor VCE Value Unit ± 18 , Figure 1. Gain > 10. October 1991 Figure 2. Unity gain configuration. 1/9 L165 PIN , ig ur e 5. L ar ge si g nal fre quenc y response. Figure 6. Maximum output current vs. vo lta ge [VCE ] a cross each output transistor . Figure 7. Safe operating area and collector characteristics of the protected power transistor . Figure 8. Maximum allowable power dissipation vs. ambient


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PDF L165V l165 L165 motor operational amplifier l165 amplifier l165 SGS-Thomson L165V 12v DC SERVO MOTOR CONTROL circuit 2A L291 L165V SGS power amplifier bidirectional speed control of dc motor
1994 - L165

Abstract: L165V operational amplifier l165 amplifier l165 12v DC SERVO MOTOR CONTROL circuit 2A L165 equivalent speed control of dc motor L165 motor GE 047 TRANSISTOR SGS-Thomson L165V
Text: Parameter Supply voltage Upper power transistor VCE Lower power transistor VCE Value Unit ± 18 , Figure 1. Gain > 10. October 1991 Figure 2. Unity gain configuration. 1/9 L165 PIN , ig ur e 5. L ar ge si g nal fre quenc y response. Figure 6. Maximum output current vs. vo lta ge [VCE ] a cross each output transistor . Figure 7. Safe operating area and collector characteristics of the protected power transistor . Figure 8. Maximum allowable power dissipation vs. ambient


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PDF L165V L165 L165V operational amplifier l165 amplifier l165 12v DC SERVO MOTOR CONTROL circuit 2A L165 equivalent speed control of dc motor L165 motor GE 047 TRANSISTOR SGS-Thomson L165V
Not Available

Abstract: No abstract text available
Text: LI NE AR T E C H N O L O G Y CORP um S3E D SSlflMbfl D G D 7 4 b 3 TflT « L T C , Temperature Range Control S e c tio n . -55°C to 150°C Power Transistor , MIL-STD-883, para 1.2.1. XT I irif= A D U j^ I J jJ f c Information furnished by Linear , described herein will not infringe on existing patent rights. LT1084M/883 LI NE AR T E C H N O L O G Y CO RP 53E D SSlflMbfl G Ü Ü 7 M b M 81b LTC - TABLET: ELECTRICAL CHARACTERISTICS


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PDF LT1084M/883 -55cC 1084M MIL-STD-883
F2D transistor

Abstract: Ferroxcube 3C8 forward converter Ferroxcube 3C8 core 3c8 EC35 bobbin Ferroxcube 3C8 4229 Ferroxcube 3C8 flyback EC35 TRANSFORMER ferroxcube bobbin ferroxcube core 3c8
Text: Current fed mode +18 30 V mA tc vc VE Output transistor (at 20 - 30V max) Output current Collector , to+150 °C I 7110fl2b 0GÔ533D 051 June 11, 1991 533 853-0297 02838 This Material Copyrighted By , remote on off VCC vcc ■7110fl2b 0035331 TIB ■June 11, 1991 534 This Material Copyrighted By Its , Temperature coefficient ection 200 ppm/°C ír Frequency range 50 100k 50 100k Hz Af„ Initial , > 0085332 *i24 ■June 11, 1991 535 This Material Copyrighted By Its Respective Manufacturer Philips


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PDF 16-Pin 5560/BEA GDIP1-T16 18Secondaries F2D transistor Ferroxcube 3C8 forward converter Ferroxcube 3C8 core 3c8 EC35 bobbin Ferroxcube 3C8 4229 Ferroxcube 3C8 flyback EC35 TRANSFORMER ferroxcube bobbin ferroxcube core 3c8
D45 TRANSISTOR

Abstract: MARKING d45 2SD2228
Text: DATA SHEET SILICON TRANSISTOR ELECTRON DEVICE NPN SILICON EPTAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER DESCRIPTION The 2SD2228 is designed for general-purpose applications requiring High DC Current and Low Collector Saturation Voltage. This is suitable for appliances including VCR cameras and , -2354 (O.D.No. TC—7675) Date Published July 1991 M Printed in Japan © NEC Corporation 1991 SEC 2SD2228 , : h /M r-— — — i sCsjjfi^ y ¿/ ¡r >


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PDF 2SD2228 IEI-1209) D45 TRANSISTOR MARKING d45
TIP2955T

Abstract: A4S2 TIP3055T T-23-Z
Text: extension for repetitive pulse operation. (1) Ptot max ar | d Ppeak max lines. (2) Second-breakdown limits , change without notice. TIP2955T PHILIPS INTERNATIONAL SbE D ■711005b 0043b04 225 HPHIN T-23-Z 1 SILICON EPITAXIAL-BASE POWER TRANSISTOR P-N-P transistor in a plastic envelope. With its n-p-n complement , €”0.6 -2.4 MSA060-1 See also chapters Mounting instructions and Accessories. August 1991 891 This Material Copyrighted By Its Respective Manufacturer TIP2955T INTERNATIONAL 5bE D 711002b 0DM3b0S


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PDF TIP2955T 711005b 0043b04 T-23-Z TIP3055T T0-220. 711002h T-33-21 TIP2955T A4S2
2SK1590

Abstract: No abstract text available
Text: from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SK1590 N-CHANNEL , £ Marking Gate(G) O—t Drain( D ) O iT« Source(S) (Diode in the figure is the parasitic diode , Source Voltage VDSS 60 V VGS = 0 Gate to Source Voltage VGSS ±20 V vDS = o Drain Current ' D (DC) ±200 mA Drain Current 1 D (pulse) ±400 mA PW ¿10 ms, Duty Cycle ^ 50 % Total Power Dissipation PT 200 , -2299A (O.D.No. TC-7732A) Date Published July 1991 M Printed in Japan © NEC Corporation 1990 NEC 2SK1590


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PDF 2SK1590 2SK1590, 2SK1590
1999 - IGBT DRIVE 500V 300A

Abstract: BJT 300A, 500V BJT Gate Drive circuit K.S. Terminals NATIONAL IGBT OF IGBT 300A 500V lgbt Drive Base BJT Switching Behaviour of IGBT Transistors
Text: Transistor (IGBT). A.R . Hefner, IEEE Transactions on Power Electronics. Vol. 6. no 2. April 1991 , pp , the PNP transistor with open base. This tail, responsible for major losses, is strongly related to , . Lorenz, Conf. Rec. PCIM, Norimberga, 1991 , pp. 475489. [3] Gate Charge Leads to Easy Drive Design For , , Conf. Rec. PCIM, Norimberga, 1991 , pp. 465474. [6] Optimization of the Turn-On and Turn-Off Behavior of IGBT Modules. P. Mourick, Conf. Rec. PCIM, Nuremburg, 1991 , pp. 460465. [7] Safe Behavior of


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