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Part Manufacturer Description Datasheet Download Buy Part
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16

transistor code 458 055 Datasheets Context Search

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2002 - transistor BC 458

Abstract: BC 458 transistor transistor code 458 055 184LC transistor code 458
Text: BC184LC BC184LC Silicon NPN Small Signal Transistor (Note 1) · BVCEO = 30V (Min.) · hFE = 250 , 100MHz VCE = 5V, IC = 2mA f = 1KHz VCE = 5V, IC = 200mA RG = 2K, f = 1KHz 150 450 900 4 dB 0.55 100 250 , Package Dimensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP , Signal Transistor Contents ·Features ·Product status/pricing/packaging ·Order Samples ·Qualification Support Features Silicon NPN Small Signal Transistor z z BVCEO = 30V (Min.) hFE = 250 (Min.) @VCE =


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PDF BC184LC BC184LC transistor BC 458 BC 458 transistor transistor code 458 055 184LC transistor code 458
2002 - transistor BC 458

Abstract: BC184l transistor code 458 055 BC 458 transistor transistor bc184l 184L transistor bc icbo nA npn bc184L npn 3184L BC184* transistor
Text: BC184L BC184L Silicon NPN Small Signal Transistor (Note 1) · BVCEO = 30V (Min.) · hFE = 130 , VCE = 5V, IC = 2mA f = 1KHz VCE = 5V, IC = 200mA RG = 2K, f = 1KHz 150 450 900 4 dB 0.55 100 130 0.6 , -92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 , Quality and reliability e-mail this datasheet Design center Silicon NPN Small Signal Transistor , Silicon NPN Small Signal Transistor z z BVCEO = 30V (Min.) hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA


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PDF BC184L 100mA BC184L transistor BC 458 transistor code 458 055 BC 458 transistor transistor bc184l 184L transistor bc icbo nA npn bc184L npn 3184L BC184* transistor
microwave oscillator

Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 NEC 1357 bd 743 transistor transistor code 2sc2342 NE56855 transistor NEC 1357
Text: TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES • HIGH fS 4.2 GHz • HIGH MAXIMUM AVAILABLE , Series takes advantage of NEC's advanced Stepped Electrode Transistor (SET) technology. SET devices , NE56854 is designed for ultra linear Class A amplifiers. The transistor is also available in chip form (NE56800). PERFORMANCE SPECIFICATIONS (T„-2TC) NE PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE CODE , ELECTRICAL CHARACTERISTICS(Ta= 25C) ne part number eiaj1 registered number package code ne56800 Chip


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PDF 3/w23 NE568 200mW NE568 NE56855 NES6851 microwave oscillator transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 NEC 1357 bd 743 transistor transistor code 2sc2342 transistor NEC 1357
2002 - BC308A

Abstract: Transistor BC 308C BC307 Bc308
Text: -92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta , =1MHz VEB= -0.5V, IC=0, f=1MHz 12 - 0.55 120 -0.5 -0.7 -0.85 -0.62 130 6 -0.7 -5 -2 -2 -15 -15 800 -0.3 V V V , Corporation Rev. A2, August 2002 BC307/308/309 Package Dimensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20 , INVESTORS | Sitema MY FA Home >> Find products >> PNP Epitaxial Silicon Transistor Contents


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PDF BC307/308/309 BC309 BC307 BC308/309 BC308 BC308A Transistor BC 308C BC307
2002 - TRANSISTOR 237b

Abstract: BC237 237B TRANSISTOR 2bc237 bc237a BC237CTA BC238
Text: Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO VEBO , : BC237/238 : BC239 : BC239 Test Condition IC=2mA, IB=0 Min. 45 25 6 5 0.2 0.2 120 0.07 0.2 0.73 0.87 0.55 , . A2, August 2002 BC237/238/239 Package Dimensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 ­0.05 , INVESTORS | Sitema MY FA Home >> Find products >> NPN Epitaxial Silicon Transistor Contents


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PDF BC237/238/239 BC239 BC237 BC238/239 TRANSISTOR 237b BC237 237B TRANSISTOR 2bc237 bc237a BC237CTA BC238
2002 - BC238

Abstract: bc238a BC239 NPN transistor BC237
Text: Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO VEBO , : BC237/238 : BC239 : BC239 Test Condition IC=2mA, IB=0 Min. 45 25 6 5 0.2 0.2 120 0.07 0.2 0.73 0.87 0.55 , . A2, August 2002 BC237/238/239 Package Dimensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 ­0.05 , INVESTORS | Sitema MY FA Home >> Find products >> NPN Epitaxial Silicon Transistor Contents


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PDF BC237/238/239 BC239 BC237 BC238/239 BC238 bc238a BC239 NPN transistor BC237
2002 - bc307bta

Abstract: BC307
Text: -92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta , =1MHz VEB= -0.5V, IC=0, f=1MHz 12 - 0.55 120 -0.5 -0.7 -0.85 -0.62 130 6 -0.7 -5 -2 -2 -15 -15 800 -0.3 V V V , Corporation Rev. A2, August 2002 BC307/308/309 Package Dimensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20 , INVESTORS | Sitema MY FA Home >> Find products >> PNP Epitaxial Silicon Transistor Contents


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PDF BC307/308/309 BC309 BC307 BC308/309 BC307 bc307bta
bfr96s

Abstract: No abstract text available
Text: SIEMENS BFR 96S NPN Silicon RF Transistor • For low-noise, low-distortion broadband , Ordering Code BFR 96S BFR 96S Q68000-A5689 Pin Configuration 1 2 3 E C Package1 , 0.44 0.45 0.46 0.47 0.49 0.49 0.51 0.51 0.53 0.54 0.55 0.57 Ic = 10 mA, 0.1 0.2 0.3 , 0.63 0.51 0.48 0.47 0.47 0.48 0.48 0.48 0.49 0.50 0.51 0.52 0.53 0.54 0.55 0.56 0.57 , 0.46 0.47 0.48 0.49 0.51 0.52 0.53 0.55 V ce 0.42 0.37 0.37 0.37 0.38 0.39 0.40 0.40


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PDF Q68000-A5689 bfr96s
2013 - FMMT458

Abstract: fmmt458ta 400V 100MA NPN SOT23
Text: 458 = Product Type Marking Code FMMT458 Document number: DS33088 Rev. 6 - 2 1 of 7 , A Product Line of Diodes Incorporated FMMT458 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Features · · · · · · · · · · BVCEO > 400V IC = 225mA high Continuous Collector Current ICM = 1A Peak Pulse , Notes: Compliance AEC-Q101 Automotive Marking 458 458 Reel size (inches) 7 7 Tape width (mm , 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° All


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PDF FMMT458 225mA 500mW 100mA FMMT558 AEC-Q101 J-STD-020 MILSTD-202, DS33088 FMMT458 fmmt458ta 400V 100MA NPN SOT23
2012 - FMMT458TA

Abstract: fmmt458 marking 458
Text: A Product Line of Diodes Incorporated FMMT458 400V NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR , : Compliance AEC-Q101 Automotive Marking 458 458 Reel size (inches) 7 7 Tape width (mm) 8 8 , packaging details, go to our website at http://www.diodes.com. Marking Information 458 = Product Type Marking Code FMMT458 Document number: DS33088 Rev. 5 - 2 1 of 6 www.diodes.com August 2012 , 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° All Dimensions in mm


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PDF FMMT458 500mW 225mA 100mA FMMT558 AEC-Q101 J-STD-020 MILSTD-202, DS33088 FMMT458TA fmmt458 marking 458
2001 - FAIRCHILD ksc1845

Abstract: KSC1845 equivalent KSC1845
Text: . Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless , =0, f=1MHz 50 150 200 0.55 580 600 0.59 0.07 110 1.6 25 2.5 40 Min. Typ. Max. 50 50 1200 0.65 0.3 V V , Demensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20 , Rev. H1 Product Folder - Fairchild P/N KSC1845 - NPN Epitaxial Silicon Transistor SEARCH , products >> Home find products space space space KSC1845 Products groups NPN Epitaxial Silicon Transistor


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PDF KSC1845 KSA992 KSC1845 FAIRCHILD ksc1845 KSC1845 equivalent
1997 - package 20223

Abstract: No abstract text available
Text: e PTB 20245 35 Watts, 2.1­2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz , Load Frequency GHz 2.05 2.10 2.15 2.20 2.25 R 3.09 3.79 4.38 4.58 3.98 Z Source jX ­3.35 ­3.45 , 20245 NPN RF Transistor l1, l9 Microstrip 50 W l2 .1 l 2 GHz Microstrip 75 W l3 .065 l 2 GHz Microstrip 16 W l4 .095 l 2 GHz Microstrip 12.5 W l5 . 055 l 2 GHz Microstrip 9.7 W l6 . 055 l 2 GHz Microstrip


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PDF G-200 1-877-GOLDMOS 1301-PTB package 20223
1997 - PTB 20245

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ
Text: e PTB 20245 35 Watts, 2.1­2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz , 2.20 4.58 ­2.40 2.50 ­1.50 2.25 3.98 ­1.80 2.40 ­1.30 3 4/3/98 Z0 = , Q1 PTB 20245 NPN RF Transistor l1, l9 Microstrip 50 l2 .1 2 GHz Microstrip 75 l3 .065 2 GHz Microstrip 16 l4 .095 2 GHz Microstrip 12.5 l5 . 055 2 GHz Microstrip 9.7 l6 . 055 2


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PDF G-200 1-877-GOLDMOS 1301-PTB PTB 20245 RF NPN POWER TRANSISTOR C 10-12 GHZ
RF NPN POWER TRANSISTOR C 10-12 GHZ

Abstract: No abstract text available
Text: ERICSSON ^ PTB 20245 35 Watts, 2.1-2.2 GHz PCN/PCS Power Transistor Description The 20245 is a class AB, NPN com mon em itter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz , 2.15 2.20 ysöMi · Z Source R 3.09 3.79 4.38 4.58 3.98 ZLoad JX R 3.20 2.95 2.75 2.50 2.40 , . Schem atic fo r f = 2.2 GHz Q1 n , (.9 PTB 20245 .1 X 2 GHz .065 X 2 GHz .095 1 2 GHz . 055 X 2 GHz . 055 X 2 GHz .065 X 2 GHz 0.1 ixF C6 C7 10 M -F , C4, C8, C10 20 pF 0 - 4 pf C9 (2 f3 f4 P.5 m n


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PDF ATC-100 G-200 BCP56 RF NPN POWER TRANSISTOR C 10-12 GHZ
BF547

Abstract: HS11 MSB003 PHE0 PHILIPS bf547
Text: cost NPN transistor in a plastic SOT23 package. MSB003 Top view Marking code : E16. Fig. 1 SOT23 , transistor BF547 PACKAGE OUTLINE 0.55 0.45 0.150 0.090 10° max J J3-ì 0.1 max 10° max 1.1 max , Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES â , Manufacturer Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 THERMAL , Philips Semiconductors Product specification NPN 1 GHz wideband transistor MBB474 1.6


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PDF BF547 MSB003 BF547 HS11 MSB003 PHE0 PHILIPS bf547
MBB400

Abstract: vqb 201 BF747 HS11 TRANSISTOR K 314 marking code 604 SOT23 top 256 yn
Text: Semiconductors Product specification NPN 1 GHz wideband transistor BF747 PACKAGE OUTLINE 0.55 0.45 0.150 , Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES â , DESCRIPTION Low cost NPN transistor in a plastic SOT23 package. PIN DESCRIPTION 1 base 2 emitter 3 collector Top view Marking code : E15. Fig. 1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP , specification NPN 1 GHz wideband transistor BF747 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE


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PDF BF747 MBB400 vqb 201 BF747 HS11 TRANSISTOR K 314 marking code 604 SOT23 top 256 yn
2006 - LM12458CIVX

Abstract: AN-906 AN-947 AN-949 LM12 LM12454 LM12458 LM12H458 LM12H458CIV
Text: -word RAM can store the conversion sequence for up to eight acquisitions through the LM12(H) 458 , output, and a differential S/H input. The LM12(H) 458 can also operate with 8-bit + sign resolution and , an 8-bit or 16-bit data bus. The LM12(H) 458 includes a direct memory access (DMA) interface for , Diagrams LM12454 01126401 The LM12(H)454 is obsolete LM12(H) 458 01126421 3 , VA+ VREFCM 0.6 VA+ TJ(MAX) 150°C Reliability Information Transistor Count +300°C


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PDF LM12454/LM12458/LM12H458 12-Bit LM12458, LM12H458 13-bit 32-word 16-bit CSP-9-111S2) CSP-9-111S2. LM12458CIVX AN-906 AN-947 AN-949 LM12 LM12454 LM12458 LM12H458CIV
2006 - lm12454civ

Abstract: No abstract text available
Text: -word RAM can store the conversion sequence for up to eight acquisitions through the LM12(H) 458 , output, and a differential S/H input. The LM12(H) 458 can also operate with 8-bit + sign resolution and in , ) 458 includes a direct memory access (DMA) interface for high-speed conversion data transfer , The LM12(H)454 is obsolete LM12(H) 458 01126421 3 www.national.com LM12454/LM12458 , -65°C to +150°C Reliability Information Transistor Count Device Type P-Chan MOS Transistor N-Chan


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PDF LM12454 LM12458 LM12H458 LM12454/LM12458/LM12H458 12-Bit SNAS079A lm12454civ
2001 - ksa992fbu

Abstract: low noise transistor cross ksa992 KSA992FH2BU KSC1845
Text: . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless , , IE=0, f=1MHz 50 150 200 - 0.55 500 500 -0.61 -0.09 100 2 25 3 40 Min. Typ. Max. -50 -1 -50 800 -0.65 , Corporation Rev. A1, June 2001 KSA992 Package Demensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 , Transistor Analog and Mixed Signal Contents Discrete Features | Product status/pricing/packaging Interface


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PDF KSA992 KSC1845 ksa992fbu low noise transistor cross ksa992 KSA992FH2BU KSC1845
2002 - transistor C1845

Abstract: c1845 c1845 transistor KSC1845FTA pspice ksc1845 c184* transistor KSC1845FBU KSC1845UBU
Text: KSC1845 KSC1845 Audio Frequency Low Noise Amplifier · Complement to KSA992 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless , =1mA VCE=6V, IC=1mA VCB=30V, IE=0, f=1MHz 50 150 200 0.55 580 600 0.59 0.07 110 1.6 25 2.5 40 Min. Typ. Max , Package Dimensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP , Transistor Contents ·Features ·Applications ·Product status/pricing/packaging ·Order Samples Features z


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PDF KSC1845 KSA992 KSC1845 O-92-3 KSC1845EBU KSC1845ETA KSC1845FBU KSC1845FTA KSC1845PBU transistor C1845 c1845 c1845 transistor KSC1845FTA pspice c184* transistor KSC1845UBU
2004 - A992 transistor

Abstract: a992 transistor A992 KSA992FBU F3F3 ksa992 KSC1845 KSA992F
Text: . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless , , IE=0, f=1MHz VCE = -5.0V, IC = -1.0mA, RG =100KW, GV = 80dB, f = 10Hz to 1.0KHz 50 150 200 - 0.55 500 , Semiconductor Corporation Rev. B2, August 2004 KSA992 Package Dimensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20 , reliability e-mail this datasheet Design center PNP Epitaxial Silicon Transistor Contents ·Features


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PDF KSA992 KSC1845 KSA992 O-92-3 KSA992FBU KSA992FTA KSA992PBU KSA992PTA A992 transistor a992 transistor A992 F3F3 KSC1845 KSA992F
2001 - BC184L equivalent

Abstract: BC184L
Text: BC184L BC184L Silicon NPN Small Signal Transistor (Note 1) · BVCEO = 30V (Min.) · hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 45 , 1KHz 450 NF Noise Figure VCE = 5V, IC = 200mA RG = 2K, f = 1KHz 1.2 0.55 V 0.7 , Rev. A, August 2001 BC184L Package Demensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15


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PDF BC184L 100mA BC184L equivalent BC184L
2004 - KSA992

Abstract: KSC1845 FAIRCHILD ksc1845
Text: KSA992 KSA992 Audio Frequency Low Noise Amplifier · Complement to KSC1845 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -120 Units V VCEO , nA 150 200 500 500 800 - 0.55 -0.61 -0.65 V -0.09 -0.3 V fT , KSA992 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10 14.47 ±0.40 0.46


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PDF KSA992 KSC1845 KSA992 KSC1845 FAIRCHILD ksc1845
2001 - BC307

Abstract: BC238 datasheet BC239 BC309 308 transistor
Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications · Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage : BC307 , Noise Figure : BC237/238 : BC239 : BC239 - 0.55 VCE= -5V, IC= -0.2mA, RG=2K, f=1KHz VCE= -5V , TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20


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PDF BC307/308/309 BC309 BC307 BC308/309 BC307 BC238 datasheet BC239 BC309 308 transistor
2001 - transistor BC 458

Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308
Text: -92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta , =1MHz VEB= -0.5V, IC=0, f=1MHz 12 - 0.55 120 -0.5 -0.7 -0.85 -0.62 130 6 -0.7 -5 -2 -2 -15 -15 800 -0.3 V V V , Corporation Rev. B1, June 2001 BC307/308/309 Package Demensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 , space space space BC307 Products groups PNP Epitaxial Silicon Transistor Analog and Mixed Signal


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PDF BC307/308/309 BC309 BC307 BC308/309 BC308 BC308ABU transistor BC 458 Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309
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