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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor code 458 055 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - transistor BC 458

Abstract: BC 458 transistor transistor code 458 055 184LC transistor code 458
Text: BC184LC BC184LC Silicon NPN Small Signal Transistor (Note 1) · BVCEO = 30V (Min.) · hFE = 250 , 100MHz VCE = 5V, IC = 2mA f = 1KHz VCE = 5V, IC = 200mA RG = 2K, f = 1KHz 150 450 900 4 dB 0.55 100 250 , Package Dimensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP , Signal Transistor Contents ·Features ·Product status/pricing/packaging ·Order Samples ·Qualification Support Features Silicon NPN Small Signal Transistor z z BVCEO = 30V (Min.) hFE = 250 (Min.) @VCE =


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PDF BC184LC BC184LC transistor BC 458 BC 458 transistor transistor code 458 055 184LC transistor code 458
2002 - transistor BC 458

Abstract: BC184l transistor code 458 055 BC 458 transistor transistor bc184l 184L transistor bc icbo nA npn bc184L npn 3184L BC184* transistor
Text: BC184L BC184L Silicon NPN Small Signal Transistor (Note 1) · BVCEO = 30V (Min.) · hFE = 130 , VCE = 5V, IC = 2mA f = 1KHz VCE = 5V, IC = 200mA RG = 2K, f = 1KHz 150 450 900 4 dB 0.55 100 130 0.6 , -92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 , Quality and reliability e-mail this datasheet Design center Silicon NPN Small Signal Transistor , Silicon NPN Small Signal Transistor z z BVCEO = 30V (Min.) hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA


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PDF BC184L 100mA BC184L transistor BC 458 transistor code 458 055 BC 458 transistor transistor bc184l 184L transistor bc icbo nA npn bc184L npn 3184L BC184* transistor
microwave oscillator

Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 NEC 1357 bd 743 transistor transistor code 2sc2342 NE56855 transistor NEC 1357
Text: TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES • HIGH fS 4.2 GHz • HIGH MAXIMUM AVAILABLE , Series takes advantage of NEC's advanced Stepped Electrode Transistor (SET) technology. SET devices , NE56854 is designed for ultra linear Class A amplifiers. The transistor is also available in chip form (NE56800). PERFORMANCE SPECIFICATIONS (T„-2TC) NE PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE CODE , ELECTRICAL CHARACTERISTICS(Ta= 25C) ne part number eiaj1 registered number package code ne56800 Chip


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PDF 3/w23 NE568 200mW NE568 NE56855 NES6851 microwave oscillator transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 NEC 1357 bd 743 transistor transistor code 2sc2342 transistor NEC 1357
2002 - BC308A

Abstract: Transistor BC 308C BC307 Bc308
Text: -92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta , =1MHz VEB= -0.5V, IC=0, f=1MHz 12 - 0.55 120 -0.5 -0.7 -0.85 -0.62 130 6 -0.7 -5 -2 -2 -15 -15 800 -0.3 V V V , Corporation Rev. A2, August 2002 BC307/308/309 Package Dimensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20 , INVESTORS | Sitema MY FA Home >> Find products >> PNP Epitaxial Silicon Transistor Contents


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PDF BC307/308/309 BC309 BC307 BC308/309 BC308 BC308A Transistor BC 308C BC307
2002 - TRANSISTOR 237b

Abstract: BC237 237B TRANSISTOR 2bc237 bc237a BC237CTA BC238
Text: Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO VEBO , : BC237/238 : BC239 : BC239 Test Condition IC=2mA, IB=0 Min. 45 25 6 5 0.2 0.2 120 0.07 0.2 0.73 0.87 0.55 , . A2, August 2002 BC237/238/239 Package Dimensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 ­0.05 , INVESTORS | Sitema MY FA Home >> Find products >> NPN Epitaxial Silicon Transistor Contents


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PDF BC237/238/239 BC239 BC237 BC238/239 TRANSISTOR 237b BC237 237B TRANSISTOR 2bc237 bc237a BC237CTA BC238
2002 - BC238

Abstract: bc238a BC239 NPN transistor BC237
Text: Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO VEBO , : BC237/238 : BC239 : BC239 Test Condition IC=2mA, IB=0 Min. 45 25 6 5 0.2 0.2 120 0.07 0.2 0.73 0.87 0.55 , . A2, August 2002 BC237/238/239 Package Dimensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 ­0.05 , INVESTORS | Sitema MY FA Home >> Find products >> NPN Epitaxial Silicon Transistor Contents


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PDF BC237/238/239 BC239 BC237 BC238/239 BC238 bc238a BC239 NPN transistor BC237
2002 - bc307bta

Abstract: BC307
Text: -92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta , =1MHz VEB= -0.5V, IC=0, f=1MHz 12 - 0.55 120 -0.5 -0.7 -0.85 -0.62 130 6 -0.7 -5 -2 -2 -15 -15 800 -0.3 V V V , Corporation Rev. A2, August 2002 BC307/308/309 Package Dimensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20 , INVESTORS | Sitema MY FA Home >> Find products >> PNP Epitaxial Silicon Transistor Contents


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PDF BC307/308/309 BC309 BC307 BC308/309 BC307 bc307bta
bfr96s

Abstract: No abstract text available
Text: SIEMENS BFR 96S NPN Silicon RF Transistor • For low-noise, low-distortion broadband , Ordering Code BFR 96S BFR 96S Q68000-A5689 Pin Configuration 1 2 3 E C Package1 , 0.44 0.45 0.46 0.47 0.49 0.49 0.51 0.51 0.53 0.54 0.55 0.57 Ic = 10 mA, 0.1 0.2 0.3 , 0.63 0.51 0.48 0.47 0.47 0.48 0.48 0.48 0.49 0.50 0.51 0.52 0.53 0.54 0.55 0.56 0.57 , 0.46 0.47 0.48 0.49 0.51 0.52 0.53 0.55 V ce 0.42 0.37 0.37 0.37 0.38 0.39 0.40 0.40


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PDF Q68000-A5689 bfr96s
2013 - FMMT458

Abstract: fmmt458ta 400V 100MA NPN SOT23
Text: 458 = Product Type Marking Code FMMT458 Document number: DS33088 Rev. 6 - 2 1 of 7 , A Product Line of Diodes Incorporated FMMT458 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Features · · · · · · · · · · BVCEO > 400V IC = 225mA high Continuous Collector Current ICM = 1A Peak Pulse , Notes: Compliance AEC-Q101 Automotive Marking 458 458 Reel size (inches) 7 7 Tape width (mm , 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° All


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PDF FMMT458 225mA 500mW 100mA FMMT558 AEC-Q101 J-STD-020 MILSTD-202, DS33088 FMMT458 fmmt458ta 400V 100MA NPN SOT23
2012 - FMMT458TA

Abstract: fmmt458 marking 458
Text: A Product Line of Diodes Incorporated FMMT458 400V NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR , : Compliance AEC-Q101 Automotive Marking 458 458 Reel size (inches) 7 7 Tape width (mm) 8 8 , packaging details, go to our website at http://www.diodes.com. Marking Information 458 = Product Type Marking Code FMMT458 Document number: DS33088 Rev. 5 - 2 1 of 6 www.diodes.com August 2012 , 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° All Dimensions in mm


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PDF FMMT458 500mW 225mA 100mA FMMT558 AEC-Q101 J-STD-020 MILSTD-202, DS33088 FMMT458TA fmmt458 marking 458
2001 - FAIRCHILD ksc1845

Abstract: KSC1845 equivalent KSC1845
Text: . Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless , =0, f=1MHz 50 150 200 0.55 580 600 0.59 0.07 110 1.6 25 2.5 40 Min. Typ. Max. 50 50 1200 0.65 0.3 V V , Demensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20 , Rev. H1 Product Folder - Fairchild P/N KSC1845 - NPN Epitaxial Silicon Transistor SEARCH , products >> Home find products space space space KSC1845 Products groups NPN Epitaxial Silicon Transistor


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PDF KSC1845 KSA992 KSC1845 FAIRCHILD ksc1845 KSC1845 equivalent
1997 - package 20223

Abstract: No abstract text available
Text: e PTB 20245 35 Watts, 2.1­2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz , Load Frequency GHz 2.05 2.10 2.15 2.20 2.25 R 3.09 3.79 4.38 4.58 3.98 Z Source jX ­3.35 ­3.45 , 20245 NPN RF Transistor l1, l9 Microstrip 50 W l2 .1 l 2 GHz Microstrip 75 W l3 .065 l 2 GHz Microstrip 16 W l4 .095 l 2 GHz Microstrip 12.5 W l5 . 055 l 2 GHz Microstrip 9.7 W l6 . 055 l 2 GHz Microstrip


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PDF G-200 1-877-GOLDMOS 1301-PTB package 20223
1997 - PTB 20245

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ
Text: e PTB 20245 35 Watts, 2.1­2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz , 2.20 4.58 ­2.40 2.50 ­1.50 2.25 3.98 ­1.80 2.40 ­1.30 3 4/3/98 Z0 = , Q1 PTB 20245 NPN RF Transistor l1, l9 Microstrip 50 l2 .1 2 GHz Microstrip 75 l3 .065 2 GHz Microstrip 16 l4 .095 2 GHz Microstrip 12.5 l5 . 055 2 GHz Microstrip 9.7 l6 . 055 2


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PDF G-200 1-877-GOLDMOS 1301-PTB PTB 20245 RF NPN POWER TRANSISTOR C 10-12 GHZ
RF NPN POWER TRANSISTOR C 10-12 GHZ

Abstract: No abstract text available
Text: ERICSSON ^ PTB 20245 35 Watts, 2.1-2.2 GHz PCN/PCS Power Transistor Description The 20245 is a class AB, NPN com mon em itter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz , 2.15 2.20 ysöMi · Z Source R 3.09 3.79 4.38 4.58 3.98 ZLoad JX R 3.20 2.95 2.75 2.50 2.40 , . Schem atic fo r f = 2.2 GHz Q1 n , (.9 PTB 20245 .1 X 2 GHz .065 X 2 GHz .095 1 2 GHz . 055 X 2 GHz . 055 X 2 GHz .065 X 2 GHz 0.1 ixF C6 C7 10 M -F , C4, C8, C10 20 pF 0 - 4 pf C9 (2 f3 f4 P.5 m n


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PDF ATC-100 G-200 BCP56 RF NPN POWER TRANSISTOR C 10-12 GHZ
BF547

Abstract: HS11 MSB003 PHE0 PHILIPS bf547
Text: cost NPN transistor in a plastic SOT23 package. MSB003 Top view Marking code : E16. Fig. 1 SOT23 , transistor BF547 PACKAGE OUTLINE 0.55 0.45 0.150 0.090 10° max J J3-ì 0.1 max 10° max 1.1 max , Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES â , Manufacturer Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 THERMAL , Philips Semiconductors Product specification NPN 1 GHz wideband transistor MBB474 1.6


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PDF BF547 MSB003 BF547 HS11 MSB003 PHE0 PHILIPS bf547
MBB400

Abstract: vqb 201 BF747 HS11 TRANSISTOR K 314 marking code 604 SOT23 top 256 yn
Text: Semiconductors Product specification NPN 1 GHz wideband transistor BF747 PACKAGE OUTLINE 0.55 0.45 0.150 , Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES â , DESCRIPTION Low cost NPN transistor in a plastic SOT23 package. PIN DESCRIPTION 1 base 2 emitter 3 collector Top view Marking code : E15. Fig. 1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP , specification NPN 1 GHz wideband transistor BF747 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE


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PDF BF747 MBB400 vqb 201 BF747 HS11 TRANSISTOR K 314 marking code 604 SOT23 top 256 yn
2006 - LM12458CIVX

Abstract: AN-906 AN-947 AN-949 LM12 LM12454 LM12458 LM12H458 LM12H458CIV
Text: -word RAM can store the conversion sequence for up to eight acquisitions through the LM12(H) 458 , output, and a differential S/H input. The LM12(H) 458 can also operate with 8-bit + sign resolution and , an 8-bit or 16-bit data bus. The LM12(H) 458 includes a direct memory access (DMA) interface for , Diagrams LM12454 01126401 The LM12(H)454 is obsolete LM12(H) 458 01126421 3 , VA+ VREFCM 0.6 VA+ TJ(MAX) 150°C Reliability Information Transistor Count +300°C


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PDF LM12454/LM12458/LM12H458 12-Bit LM12458, LM12H458 13-bit 32-word 16-bit CSP-9-111S2) CSP-9-111S2. LM12458CIVX AN-906 AN-947 AN-949 LM12 LM12454 LM12458 LM12H458CIV
2006 - lm12454civ

Abstract: No abstract text available
Text: -word RAM can store the conversion sequence for up to eight acquisitions through the LM12(H) 458 , output, and a differential S/H input. The LM12(H) 458 can also operate with 8-bit + sign resolution and in , ) 458 includes a direct memory access (DMA) interface for high-speed conversion data transfer , The LM12(H)454 is obsolete LM12(H) 458 01126421 3 www.national.com LM12454/LM12458 , -65°C to +150°C Reliability Information Transistor Count Device Type P-Chan MOS Transistor N-Chan


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PDF LM12454 LM12458 LM12H458 LM12454/LM12458/LM12H458 12-Bit SNAS079A lm12454civ
2001 - ksa992fbu

Abstract: low noise transistor cross ksa992 KSA992FH2BU KSC1845
Text: . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless , , IE=0, f=1MHz 50 150 200 - 0.55 500 500 -0.61 -0.09 100 2 25 3 40 Min. Typ. Max. -50 -1 -50 800 -0.65 , Corporation Rev. A1, June 2001 KSA992 Package Demensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 , Transistor Analog and Mixed Signal Contents Discrete Features | Product status/pricing/packaging Interface


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PDF KSA992 KSC1845 ksa992fbu low noise transistor cross ksa992 KSA992FH2BU KSC1845
2002 - transistor C1845

Abstract: c1845 c1845 transistor KSC1845FTA pspice ksc1845 c184* transistor KSC1845FBU KSC1845UBU
Text: KSC1845 KSC1845 Audio Frequency Low Noise Amplifier · Complement to KSA992 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless , =1mA VCE=6V, IC=1mA VCB=30V, IE=0, f=1MHz 50 150 200 0.55 580 600 0.59 0.07 110 1.6 25 2.5 40 Min. Typ. Max , Package Dimensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP , Transistor Contents ·Features ·Applications ·Product status/pricing/packaging ·Order Samples Features z


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PDF KSC1845 KSA992 KSC1845 O-92-3 KSC1845EBU KSC1845ETA KSC1845FBU KSC1845FTA KSC1845PBU transistor C1845 c1845 c1845 transistor KSC1845FTA pspice c184* transistor KSC1845UBU
2004 - A992 transistor

Abstract: a992 transistor A992 KSA992FBU F3F3 ksa992 KSC1845 KSA992F
Text: . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless , , IE=0, f=1MHz VCE = -5.0V, IC = -1.0mA, RG =100KW, GV = 80dB, f = 10Hz to 1.0KHz 50 150 200 - 0.55 500 , Semiconductor Corporation Rev. B2, August 2004 KSA992 Package Dimensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20 , reliability e-mail this datasheet Design center PNP Epitaxial Silicon Transistor Contents ·Features


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PDF KSA992 KSC1845 KSA992 O-92-3 KSA992FBU KSA992FTA KSA992PBU KSA992PTA A992 transistor a992 transistor A992 F3F3 KSC1845 KSA992F
2001 - BC184L equivalent

Abstract: BC184L
Text: BC184L BC184L Silicon NPN Small Signal Transistor (Note 1) · BVCEO = 30V (Min.) · hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 45 , 1KHz 450 NF Noise Figure VCE = 5V, IC = 200mA RG = 2K, f = 1KHz 1.2 0.55 V 0.7 , Rev. A, August 2001 BC184L Package Demensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15


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PDF BC184L 100mA BC184L equivalent BC184L
2004 - KSA992

Abstract: KSC1845 FAIRCHILD ksc1845
Text: KSA992 KSA992 Audio Frequency Low Noise Amplifier · Complement to KSC1845 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -120 Units V VCEO , nA 150 200 500 500 800 - 0.55 -0.61 -0.65 V -0.09 -0.3 V fT , KSA992 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10 14.47 ±0.40 0.46


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PDF KSA992 KSC1845 KSA992 KSC1845 FAIRCHILD ksc1845
2001 - BC307

Abstract: BC238 datasheet BC239 BC309 308 transistor
Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications · Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage : BC307 , Noise Figure : BC237/238 : BC239 : BC239 - 0.55 VCE= -5V, IC= -0.2mA, RG=2K, f=1KHz VCE= -5V , TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20


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PDF BC307/308/309 BC309 BC307 BC308/309 BC307 BC238 datasheet BC239 BC309 308 transistor
2001 - transistor BC 458

Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308
Text: -92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta , =1MHz VEB= -0.5V, IC=0, f=1MHz 12 - 0.55 120 -0.5 -0.7 -0.85 -0.62 130 6 -0.7 -5 -2 -2 -15 -15 800 -0.3 V V V , Corporation Rev. B1, June 2001 BC307/308/309 Package Demensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 , space space space BC307 Products groups PNP Epitaxial Silicon Transistor Analog and Mixed Signal


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PDF BC307/308/309 BC309 BC307 BC308/309 BC308 BC308ABU transistor BC 458 Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309
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