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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor c018 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2012 - transistor c018

Abstract: smd transistor c014
Text: : CLKOUT3 R80 C018 20 19 18 17 16 15 14 13 1000PF C24 EGND R24 , PCB mount Q1 1 SOT23 SOT23 Fairchild N-Channel EMF effect transistor (Pb-free , C0, C02, C05, C010, C013, C014, C018 7 47µF 10% 10V 1210 CAP_1210 Murata


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PDF ISL8225MEVAL2Z ISL8225M ISL8225M, AN1789 transistor c018 smd transistor c014
2013 - transistor c018

Abstract: No abstract text available
Text: Avoid Inrush Current Quick Output Discharge (QOD) Transistor ESD Performance Tested Per JESD 22 â , 1.5 2 2.5 3 3.5 4 VIN (V) VIN (V) C018 C017 Figure 17. Figure 18 , 3 4 VIN (V) C018 Figure 19. 10 Submit Documentation Feedback Copyright © 2013


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PDF TPS22920L TPS22920L transistor c018
2013 - Not Available

Abstract: No abstract text available
Text: Output Discharge (QOD) Transistor ESD Performance Tested Per JESD 22 ­ 4000-V Human-Body Model (A114-B , 3.5 4 C018 Figure 17. tON vs VIN 2500 Figure 18. -40C 25C 85C 1500 tON (µs) 1000 500 0 0 1 2 VIN (V) C018 2000 3 4 Figure 19. 10 Submit Documentation Feedback Product


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PDF TPS22920L
2013 - Not Available

Abstract: No abstract text available
Text: Avoid Inrush Current Quick Output Discharge (QOD) Transistor ESD Performance Tested Per JESD 22 â , 1.5 2 2.5 3 3.5 4 VIN (V) VIN (V) C018 C017 Figure 17. Figure 18 , 3 4 VIN (V) C018 Figure 19. 10 Submit Documentation Feedback Copyright © 2013


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PDF TPS22920L TPS22920L
2013 - NCP114

Abstract: No abstract text available
Text: transistor is turned−off. The EN pin has internal pull−down current source with typ. value of 300 nA , disabled. The pass transistor is turned−off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND , °C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward biased in the , AS THE TERMINALS. 3X C0.18 X 45 5 L2 DETAIL A DIM A A1 A3 b D D2 E e L L2 TOP


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PDF NCP114 NCP114 517CU NCP114/D
2013 - Not Available

Abstract: No abstract text available
Text: voltage and the active discharge transistor is turned−off. The EN pin has internal pull−down current , to be disabled. The pass transistor is turned−off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is , TA = 25°C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward , AS THE TERMINALS. 3X C0.18 X 45 5 L2 DETAIL A DIM A A1 A3 b D D2 E e L L2 TOP


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PDF NCP103 NCP103 517CU NCP103/D
2014 - NCP114

Abstract: transistor C 6093 equivalent NCP114AMX100TCG NCP114BMX180TCG
Text: transistor is turned−off. The EN pin has internal pull−down current source with typ. value of 300 nA , disabled. The pass transistor is turned−off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND , °C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward biased in the , EXPOSED PAD AS WELL AS THE TERMINALS. 3X C0.18 X 45 5 L2 DETAIL A DIM A A1 A3 b D D2 E


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PDF NCP114 NCP114 517CU NCP114/D transistor C 6093 equivalent NCP114AMX100TCG NCP114BMX180TCG
2014 - Not Available

Abstract: No abstract text available
Text: . The NCP103 regulates the output voltage and the active discharge transistor is turned−off. The EN , disabled. The pass transistor is turned−off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND , °C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward biased in the , APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 3X C0.18 X 45 5 L2 DETAIL A DIM A A1


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PDF NCP103 NCP103 517CU NCP103/D
2014 - NCP114

Abstract: No abstract text available
Text: transistor is turned−off. The EN pin has internal pull−down current source with typ. value of 300 nA , disabled. The pass transistor is turned−off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND , °C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward biased in the , FROM THE TERMINAL TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 3X C0.18


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PDF NCP114 NCP114 517CU NCP114/D
2014 - NCP114

Abstract: No abstract text available
Text: transistor is turned−off. The EN pin has internal pull−down current source with typ. value of 300 nA , disabled. The pass transistor is turned−off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND , °C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward biased in the , TERMINAL TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 3X C0.18 X 45 5


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PDF NCP114 NCP114 517CU NCP114/D
2014 - NCP114

Abstract: NCP114BMX180TCG
Text: transistor is turned−off. The EN pin has internal pull−down current source with typ. value of 300 nA , disabled. The pass transistor is turned−off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND , °C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward biased in the , . 3X C0.18 X 45 5 L2 DETAIL A DIM A A1 A3 b D D2 E e L L2 TOP VIEW A 0.10 C


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PDF NCP114 NCP114 517CU NCP114/D NCP114BMX180TCG
2014 - Not Available

Abstract: No abstract text available
Text: voltage and the active discharge transistor is turned−off. The EN pin has internal pull−down current , to be disabled. The pass transistor is turned−off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is , TA = 25°C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward , FROM THE TERMINAL TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 3X C0.18


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PDF NCP103 NCP103 517CU NCP103/D
2014 - Not Available

Abstract: No abstract text available
Text: . The NCP103 regulates the output voltage and the active discharge transistor is turned−off. The EN , disabled. The pass transistor is turned−off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND , °C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward biased in the , AS THE TERMINALS. 3X C0.18 X 45 5 L2 DETAIL A DIM A A1 A3 b D D2 E e L L2 TOP


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PDF NCP103 NCP103 517CU NCP103/D
2013 - Not Available

Abstract: No abstract text available
Text: Quick Output Discharge Transistor ESD Performance Tested Per JESD 22 – 5000-V Human-Body Model , Temperature (ƒC) 10 35 60 85 Temperature (ƒC) C017 VIN C018 TURN-ON TIME vs


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PDF TPS22924D TPS22924D
2013 - transistor c018

Abstract: No abstract text available
Text: Output Discharge Transistor ESD Performance Tested Per JESD 22 ­ 5000-V Human-Body Model (A114-B, Class , 10O 4000 -40 -15 10 35 60 85 C017 CL = 0.1µF, CIN = 1µF, RL = 10O 1 -40 -15 10 35 60 85 C018


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PDF TPS22924D 000-V A114-B, transistor c018
2013 - UCC27532

Abstract: No abstract text available
Text: Discrete Transistor Pair Drive (providing easy interface with controller) CMOS Compatible Input-Logic , Voltage (V) C018 Figure 22. Submit Documentation Feedback Copyright © 2013, Texas Instruments


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PDF UCC27532-Q1 35-VMAX AEC-Q100 UCC27532
2014 - transistor C017

Abstract: No abstract text available
Text: © pull-down transistor for quick output discharge (QOD) when the switch is turned off. The TPS22961 is , © C018 CL = 0.1µF VBIAS = 5V RL = 10Ω Figure 20. tON vs VIN CL = 0.1µF Figure 21


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PDF TPS22961 TPS22961 transistor C017
2014 - Not Available

Abstract: No abstract text available
Text: © pull-down transistor for quick output discharge (QOD) when the switch is turned off. The TPS22961 is , © C018 CL = 0.1µF VBIAS = 5V RL = 10Ω Figure 20. tON vs VIN CL = 0.1µF Figure 21


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PDF TPS22961 TPS22961
2014 - Not Available

Abstract: No abstract text available
Text: © pull-down transistor for quick output discharge (QOD) when the switch is turned off. The TPS22961 is , © C018 CL = 0.1µF VBIAS = 5V RL = 10Ω Figure 20. tON vs VIN CL = 0.1µF Figure 21


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PDF TPS22961 TPS22961
2013 - smd transistor c009

Abstract: smd transistor c014 c009 smd transistor smd transistor c006 C002 SMD UCC27532DBV transistor c018 Pulse Transformer PCB UCC27532
Text: UCC27532 www.ti.com SLUSBD9 ­ FEBRUARY 2013 2.5-A and 5-A, 35-VMAX VDD FET and IGBT Single-Gate Driver Check for Samples: UCC27532 1 FEATURES Low Cost Gate Driver (offering optimal solution for driving FET and IGBTs) Superior Replacement to Discrete Transistor Pair Drive (providing easy interface with controller) CMOS Compatible Input Logic Threshold (becomes fixed at VDD above 18 V) Split Outputs , 60 20 Cload = 10nF 10 30 40 0 10 20 Supply Voltage (V) C018 30 40 Figure 21. Rise Time


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PDF UCC27532 35-VMAX 17-ns smd transistor c009 smd transistor c014 c009 smd transistor smd transistor c006 C002 SMD UCC27532DBV transistor c018 Pulse Transformer PCB UCC27532
2012 - smd transistor c009

Abstract: c009 smd transistor smd transistor c006 UCC27531 transistor C013 C005 sot23 pack
Text: UCC27531 www.ti.com SLUSBA7A ­ DECEMBER 2012 2.5-A and 5-A, 35-VMAX VDD FET and IGBT Single-Gate Driver Check for Samples: UCC27531 1 FEATURES Low Cost Gate Driver (offering optimal solution for driving FET and IGBTs) Superior Replacement to Discrete Transistor Pair Drive (providing easy interface with controller) TTL and CMOS Compatible Input Logic Threshold, (independent of supply voltage , ) C018 30 40 Figure 21. Rise Time vs. Supply Voltage Figure 22. Fall Time vs. Supply Voltage


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PDF UCC27531 35-VMAX smd transistor c009 c009 smd transistor smd transistor c006 UCC27531 transistor C013 C005 sot23 pack
2013 - smd transistor c009

Abstract: UCC27532
Text: Discrete Transistor Pair Drive (providing easy interface with controller) CMOS Compatible Input-Logic , Voltage (V) C018 Figure 22. Submit Documentation Feedback Copyright © 2013, Texas Instruments


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PDF UCC27532-Q1 35-VMAX AEC-Q100 smd transistor c009 UCC27532
2014 - Not Available

Abstract: No abstract text available
Text: © pull-down transistor for quick output discharge (QOD) when the switch is turned off. The TPS22961 is , © C018 CL = 0.1µF VBIAS = 5V RL = 10Ω Figure 20. tON vs VIN CL = 0.1µF Figure 21


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PDF TPS22961 TPS22961
2010 - sfh817a

Abstract: 1n4007 sod123 D217 OPTO NCP1397 diode zd201 RECTIFIER DIODE D100 opto d206 NCP1252 schematic diagram lcd tv sharp inverter zener diode 1206 6v8
Text: be avoided in order to reduce consumption in low power mode. To be able to drive the transistor Q102 , through an open collector transistor . To avoid that added power, we use a push pull output on the µP side , drives the PNP transistor Q101 which supplies all controllers (PFC, Flyback and backlight). To get the , voltages goes over the limit defined by the respective Zener diode, the transistor Q103 will be switched , keeping the system working in low frequency burst mode. Open circuit of Opto transistor PC200B in ON


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PDF TND401/D 680uH EFD30 NCP1052P44G TP207ST PH9080NL sfh817a 1n4007 sod123 D217 OPTO NCP1397 diode zd201 RECTIFIER DIODE D100 opto d206 NCP1252 schematic diagram lcd tv sharp inverter zener diode 1206 6v8
2012 - smd transistor c009

Abstract: No abstract text available
Text: Discrete Transistor Pair Drive (providing easy interface with controller) TTL and CMOS Compatible Input , Supply Voltage (V) 10 0 10 20 30 C002 40 Supply Voltage (V) C018 Figure 39


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PDF UCC27531 UCC27533, UCC27536 UCC27537, UCC27538 35-VMAX smd transistor c009
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