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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor c 548 c Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - transistor C 548 B

Abstract: transistor c 548 transistor bc547 specifications transistor C 547 ic 548 transistor b 548 transistor c 548 c C 547 transistor Use of BC547 transistor input output npn 547 transistor
Text: UTC BC546/547/ 548 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS , /547/ 548 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL TEST CONDITIONS Current gain , -037,A UTC BC546/547/ 548 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS UTC , MAXIMUM RATINGS (Ta=25° C , unless otherwise specified) PARAMETER SYMBOL RATING UNIT 80 50 30 , ~ +150 V V V mA mW ° C ° C VCBO VCEO VEBO Ic Pc Tj TSTG ELECTRICAL


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PDF BC546/547/548 BC546, BC546 BC547 BC548 transistor C 548 B transistor c 548 transistor bc547 specifications transistor C 547 ic 548 transistor b 548 transistor c 548 c C 547 transistor Use of BC547 transistor input output npn 547 transistor
2014 - transistor C 548 B

Abstract: TRANSISTOR c 547 B transistor bc547 specifications
Text: UNISONIC TECHNOLOGIES CO., LTD BC546/547/ 548 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND , TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25° C , unless otherwise specified) PARAMETER SYMBOL RATINGS , CHARACTERISTICS QW-R201-037.D 3 of 4 BC546/547/ 548 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no , BC547G-x-T92-K BC548L-x-T92-B BC548G-x-T92-B BC548L-x-T92-K BC548G-x-T92-K Note: Pin Assignment: C , 3 C B E C B E C B E C B E C B E C B E Packing Tape Box Bulk Tape Box Bulk


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PDF BC546/547/548 BC546, BC547, BC548, BC546L-x-T92-B BC546G-x-T92-B BC546L-x-T92-K BC546G-x-T92-K BC547L-x-T92-B BC547G-x-T92-B transistor C 548 B TRANSISTOR c 547 B transistor bc547 specifications
MIL-PRF-39016

Abstract: cecc 16101 HI-G RELAYS relay 5a dpdt transistor C 548 B MIL-PRF-28776 dpdt 2bcn RELAY SPDT b mgad
Text: Operating Power at P.I. 5.30,0 Vdc 5.26,5 Vdc 130 (mW) 5.30,0 Vdc 5.26,5 Vdc 5.48 ,0 Vdc 150 130 130 150 60 5.48 ,0 Vdc 5.26,5 Vdc 70 60 60 100 5.26,5 Vdc , / 28 Vdc 5.28,0 Vdc 5.48 ,0 Vdc 150 140 60 DPDT 1A / 28 Vdc 5.48 ,0 Vdc 1A / 28 Vdc 2A / 28 Vdc 2A / 28 Vdc 2A / 28 Vdc 5.48 ,0 Vdc 5.26,5 Vdc 5.48 ,0 Vdc 5.48 ,0 , / 28 Vdc 5A / 28 Vdc 6.26,5 Vdc 5.48 ,0 Vdc 5.48 ,0 Vdc 6.76,0 Vdc 26,5.115 Vac


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PDF 2K6600 100GRID MIL-PRF-39016 cecc 16101 HI-G RELAYS relay 5a dpdt transistor C 548 B MIL-PRF-28776 dpdt 2bcn RELAY SPDT b mgad
2013 - transistor bc547 specifications

Abstract: BC547L-
Text: Tape Box Bulk 1 of 4 QW-R201-037. C BC546/547/ 548  NPN EPITAXIAL SILICON TRANSISTOR , UNISO TE NIC CHNO G SCO LTD LO IE ., BC546/547/ 548 NPN EPITAXIAL SILICON TRANSISTOR SWI T , ) 100 Capacitance, Cob(pF)  NPN EPITAXIAL SILICON TRANSISTOR 3 of 4 QW-R201-037. C BC546/547/ 548 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment , BC548G-x-T92-K Note: Pin Assignment: C : Collector B: Base E: Emitter www.unisonic.com.tw Copyright © 2013


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PDF BC546/547/548 BC546, BC547, BC548, BC546L-x-T92-B BC546G-x-T92-B BC546L-x-T92-K BC546G-x-T92-K BC547L-x-T92-B BC547G-x-T92-B transistor bc547 specifications BC547L-
2001 - BC546 "cross reference"

Abstract: transistor BC 458 Transistor NPN BC 549B bc549 Cross Reference BC548 cross reference BC547ATA bc550 of transistor BC 548 bc549 Amplifier with transistor BC549
Text: . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , BC546/547/ 548 /549/550 BC546/547/ 548 /549/550 Switching and Applications · High Voltage: BC546 , 30 6 5 100 500 150 -65 ~ 150 Units V V V V V V V V mA mW ° C ° C VCEO Collector-Emitter Voltage , Characteristics Ta=25° C unless otherwise noted Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF , Capacitance Noise Figure : BC546/547/ 548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC


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PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 BC546 "cross reference" transistor BC 458 Transistor NPN BC 549B bc549 Cross Reference BC548 cross reference BC547ATA bc550 of transistor BC 548 bc549 Amplifier with transistor BC549
K/HI-548

Abstract: Hi1-0548
Text: ® HI-546, HI-547, HI- 548 , HI-549 H R I A RS S E M I C O N D U C T O R Sin g le 16 and , -546, HI-547, HI- 548 , HI-549 Typical Performance Curves TA = 25° C , VSUppLY = ±15V: VAH = +4V: VAL = 0 , -546, HI-547, HI- 548 , HI-549 Typical Performance Curves TA = 25° C , V S U p p LY = ±15V: VAH = +4V , im ilar connection for H I-547/H I- 548 /H I-549. FIGURE 5A. SUPPLY C U R RENT vs TOGG LE FREQUENCY , mils x 19 mils x 105 A/cm TRANSISTOR COUNT: METALLIZATION: HI- 548 : 253 HI-549: 253 Type


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PDF HI-546, HI-547, HI-548, HI-549 HI-548: HI-549: I-548 K/HI-548 Hi1-0548
H13-0547-5

Abstract: H19P0546 HI-549 HI-548 HI-547 HI-546 AN521 AN520 H11-0548-2 ic 546
Text: /549-2.-55° C to 125° C HI-546/547/ 548 /549-5 . 0° C to 75° C HI-546/547/ 548 /549-9 , -546, H1-547, HI- 548 , HI-549 Test Circuits and Waveforms TA = 25° C , Vsupply = ±15v VAH = 4V, VAL = 0.8V , -547, HI- 548 , HI-549 Test Circuits and Waveforms TA = 25° C , VSUppLY = ±15V: VAH = 4V, VAL = 0.8V: VREF = , . ACCESS TIME 11 HfAJ^mS HI-546, H1-547, HI- 548 , HI-549 Test Circuits and Waveforms TA = 25° C , VSUppLY , hßARmS HI-546, H1-547, HI- 548 , HI-549 Data Sheet June 1999 File Number 3150.2 Single 16 and


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PDF HI-546, H1-547, HI-548, HI-549 HI-547, HI-548 HI-549 1-800-4-HARRIS H13-0547-5 H19P0546 HI-547 HI-546 AN521 AN520 H11-0548-2 ic 546
Not Available

Abstract: No abstract text available
Text: z Ul LL® IN 1A HI-546, HI-547, HI- 548 , HI-549 Pinouts ( C o n tin u e d ) HI1 , -546/547/ 548 /549-2 . -55° C to +125° C HI-546/547/ 548 /549-4. -25° C to +85° C HI-546/547/ 548 /549-5, -7 . 0° C to +75° C HI-546/547/ 548 /549-9 . -40° C to +85° C Junction Temperature , 30 - pF HI- 548 +25° C - 25 - - 25 - pF HI-549 +25° C -


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PDF HI-546, HI-547 HI-548, HI-549 HI-547, HI-548 HI-549 fault83 05A/cm2
H11-0548-5

Abstract: H11-0549-5
Text: îü > *» S1 m 2 10-141 HI-546, HI-547, HI- 548 , HI-549 Pinouts ( C o n t in u e d , . Operating Temperature Ranges . -55° C to +125° C HI-546/547/ 548 /549-2 . HI-546/547/ 548 /549-4. . . -25° C to +85° C . . . 0° C to +75° C HI-546/547/ 548 /549-5, -7 . . -40° C to +85° C H I , Output Capacitance C D(0ff) HI-546 Hi-547 HI- 548 HI-549 Input to Output Capacitance, C d s (o f f , , lD(0FF) HI-546 HI-547 HI- 548 HI-549 With Input Overvoltage Applied, Id(OFF) Note 2 +25° C Full


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PDF HI-546, HI-547 HIS48, HIS49 HI-547, HI-548 HI-549 10sA/cm2 HI-548: H11-0548-5 H11-0549-5
H19P0547-5

Abstract: H11-0548-2 H14-0547 H11-0546-2 HI4-0547 transistor 548
Text: /549-2. -55° C to 125° C HI-546/547/ 548 /549-4. -25° C to 85° C HI-546/547/ 548 /549-5 . 0° C to 75° C HI-546/547/ 548 /549-9. -40° C to 85° C CAUTION: Stresses above , -547 HI- 548 HI-549 Input to Output Capacitance, C qs(q ff ) DIGITAL INPUT CHARACTERISTICS Input Low , -546, HI-547, HI- 548 , HI-549 Typical Performance Curves T^ = 25° C , Vsupply = (Continued) 5V, V^h = +4V, V


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PDF HI-548: HI-549: HI-548 HI-549 H19P0547-5 H11-0548-2 H14-0547 H11-0546-2 HI4-0547 transistor 548
1993 - HI4-0546/883

Abstract: HI1-0546/883 HI9P0546-5 HI4-0549 HI-549 HI-548 HI-547 HI-546 HI4-0549/883 hi4-0546
Text: HI-546, HI-547 HI- 548 , HI-549 S E M I C O N D U C T O R Single 16 and 8, Differential 8 and , Capacitance, CDS(OFF) o +25 C 10-145 Specifications HI546, HI-547, HI- 548 , HI-549 Electrical , : 1.4 x 105A/cm2 TRANSISTOR COUNT: HI- 548 : 253 HI-549: 253 PROCESS: CMOS-DI SUBSTRATE POTENTIAL , ) EN (2) HI-546, HI-547 HI- 548 , HI-549 S E M I C O N D U C T O R Single 16 and 8 , Capacitance, CDS(OFF) o +25 C 10-145 Specifications HI546, HI-547, HI- 548 , HI-549 Electrical


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PDF HI-546, HI-547 HI-548, HI-549 70VP-P HI-547, HI-548 HI-549 05A/cm2 HI4-0546/883 HI1-0546/883 HI9P0546-5 HI4-0549 HI-547 HI-546 HI4-0549/883 hi4-0546
1999 - transistor bc546

Abstract: bc546 fairchild data of transistor 547 transistor C 548 B Amplifier with transistor BC549 Amplifier with transistor BC548 BC550 TRANSISTOR bc560 BC549 NPN transistor download datasheet bc550 transistor
Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/ 548 /549/550 SWITCHING AND AMPLIFIER · HIGH VOLTAGE , RATINGS (TA=25° C ) ° Characteristic Symbol Collector Base Voltage : BC546 : BC547/550 : BC548 , Temperature Rating Unit 80 50 30 V V V 65 45 30 V V V V V V mA mW ° C ° C , . Emitter ELECTRICAL CHARACTERISTICS (TA=25° C ) ° Characteristic Symbol Collector Cut-off Current , Collector Base Capacitance Emitter Base Capacitance Noise Figure : BC546/547/ 548 : BC549/550 : BC549


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PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 transistor bc546 bc546 fairchild data of transistor 547 transistor C 548 B Amplifier with transistor BC549 Amplifier with transistor BC548 BC550 TRANSISTOR bc560 BC549 NPN transistor download datasheet bc550 transistor
2002 - bc550

Abstract: bc550 noise figure transistor BC 548 Data transistor NPN 548 BC548 npn bc550 transistor transistor bc 548 npn BC550CTA
Text: . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , BC546/547/ 548 /549/550 BC546/547/ 548 /549/550 Switching and Applications · High Voltage: BC546 , 30 6 5 100 500 150 -65 ~ 150 Units V V V V V V V V mA mW ° C ° C VCEO Collector-Emitter Voltage , Characteristics Ta=25° C unless otherwise noted Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF , Capacitance Noise Figure : BC546/547/ 548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC


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PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 bc550 bc550 noise figure transistor BC 548 Data transistor NPN 548 BC548 npn bc550 transistor transistor bc 548 npn BC550CTA
2002 - APPLICATION OF BC548 transistor

Abstract: Amplifier with transistor BC548 information of BC548 BC548 for bc548 npn transistor transistor bc 547 transistor bc 548 npn bc 548b transistor BC549 input NPN Transistor BC548B
Text: . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , BC546/547/ 548 /549/550 BC546/547/ 548 /549/550 Switching and Applications · High Voltage: BC546 , 30 6 5 100 500 150 -65 ~ 150 Units V V V V V V V V mA mW ° C ° C VCEO Collector-Emitter Voltage , Characteristics Ta=25° C unless otherwise noted Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF , Capacitance Noise Figure : BC546/547/ 548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC


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PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 APPLICATION OF BC548 transistor Amplifier with transistor BC548 information of BC548 BC548 for bc548 npn transistor transistor bc 547 transistor bc 548 npn bc 548b transistor BC549 input NPN Transistor BC548B
2002 - BC547

Abstract: transistor bc547 specifications transistor bc547 applications bc547 marking transistor transistor BC 547B information of BC547 Use of BC547 transistor transistor BC 458 BC547ATA BC547-J22Z
Text: . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , BC546/547/ 548 /549/550 BC546/547/ 548 /549/550 Switching and Applications · High Voltage: BC546 , 30 6 5 100 500 150 -65 ~ 150 Units V V V V V V V V mA mW ° C ° C VCEO Collector-Emitter Voltage , Characteristics Ta=25° C unless otherwise noted Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF , Capacitance Noise Figure : BC546/547/ 548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC


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PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 BC547 transistor bc547 specifications transistor bc547 applications bc547 marking transistor transistor BC 547B information of BC547 Use of BC547 transistor transistor BC 458 BC547ATA BC547-J22Z
2002 - transistor BC 458

Abstract: BC 458 transistor transistor BC 548 Data BC546BTA bc546 fairchild bc546 TRANSISTOR B 546b bc549 of transistor BC548 bc 547 b transistor
Text: . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , BC546/547/ 548 /549/550 BC546/547/ 548 /549/550 Switching and Applications · High Voltage: BC546 , 30 6 5 100 500 150 -65 ~ 150 Units V V V V V V V V mA mW ° C ° C VCEO Collector-Emitter Voltage , Characteristics Ta=25° C unless otherwise noted Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF , Capacitance Noise Figure : BC546/547/ 548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC


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PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 transistor BC 458 BC 458 transistor transistor BC 548 Data BC546BTA bc546 fairchild bc546 TRANSISTOR B 546b bc549 of transistor BC548 bc 547 b transistor
2002 - bc549

Abstract: transistor BC549 hfe Transistor NPN BC 549B BC549 NPN transistor transistor c 548 c Transistor Bc547 npn Amplifier with transistor BC549 TO92-3 Package Dimensions bc548 fairchild transistor BC 548 Data
Text: . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , BC546/547/ 548 /549/550 BC546/547/ 548 /549/550 Switching and Applications · High Voltage: BC546 , 30 6 5 100 500 150 -65 ~ 150 Units V V V V V V V V mA mW ° C ° C VCEO Collector-Emitter Voltage , Characteristics Ta=25° C unless otherwise noted Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF , Capacitance Noise Figure : BC546/547/ 548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC


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PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 bc549 transistor BC549 hfe Transistor NPN BC 549B BC549 NPN transistor transistor c 548 c Transistor Bc547 npn Amplifier with transistor BC549 TO92-3 Package Dimensions bc548 fairchild transistor BC 548 Data
H14-0546

Abstract: HI4-0549 546F HI3-0546-5 HI9P0547-9
Text: Conditions Operating Temperature Ranges HI-546/547/ 548 /549-2.-55° C to 125° C HI-546/547/ 548 /549-4.-25° C to 85° C HI-546/547/ 548 /549-5.0° C to 75° C HI-546/547/ 548 /549-9.-40° C to 85° C Thermal Information Thermal , recommended. 8. VREF = +10V. 11 -922 HI-546, H1-547, HI- 548 , HI-549 Typical Performance Curves Ta = 25° C , -547, HI- 548 , HI-549 Typical Performance Curves TA = 25° C , VSUPPLY = ±15V: VAH = +4V: VAL = 0.8V, VREF =


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PDF HI-546, H1-547, HI-548, HI-549 HI-548: HI-549: hi-548 H14-0546 HI4-0549 546F HI3-0546-5 HI9P0547-9
2006 - T17 TRANSISTOR

Abstract: C10H LA7138M gsm2 la7138
Text: : 10MHz flat. · Y/ C time difference: 2ns maximum. · Signal dynamic range: 170 IRE. · Supports all types , Ratings at Ta = 25° C Parameter Maximum supply voltage Allowable power dissipation Symbol , Operating temperature *: Topr -20 to +75 ° C Storage temperature Tstg -40 to +150 ° C , Conditions at Ta = 25° C Parameter Symbol Recommended supply voltage A Operating supply voltage range , operation circuit with a PNP transistor for voltage drop is recommended for the recommended supply voltage


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PDF ENA0220 LA7138M LA7138M -80dB. 10MHz A0220-13/13 T17 TRANSISTOR C10H gsm2 la7138
2002 - transistor bc549

Abstract: bc556 transistor bc546 fairchild CBC546 Transistor BC546/547/548/549/550 BC550 BC560 transistor bc547 transistor C 547 transistor 548
Text: . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , BC546/547/ 548 /549/550 BC546/547/ 548 /549/550 Switching and Applications · High Voltage: BC546 , ) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ° C TSTG Storage Temperature -65 ~ 150 ° C : BC546/547 : BC548/549/550 Electrical Characteristics Ta=25° C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test


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PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 transistor bc549 bc556 transistor bc546 fairchild CBC546 Transistor BC546/547/548/549/550 BC550 BC560 transistor bc547 transistor C 547 transistor 548
2000 - Amplifier with transistor BC549

Abstract: npn transistor of bc548 bc556 transistor bc549 noise figure BC546 BC560 BC556 BC550 BC549 Transistor B C 458
Text: . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , BC546/547/ 548 /549/550 BC546/547/ 548 /549/550 Switching and Amplifier · High Voltage: BC546 , ) 100 mA PC Collector Dissipation 500 mW TJ Junction Temperature 150 ° C TSTG Storage Temperature -65 ~ 150 ° C : BC546/547 : BC548/549/550 Electrical Characteristics Ta=25° C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test


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PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 Amplifier with transistor BC549 npn transistor of bc548 bc556 transistor bc549 noise figure BC546 BC560 BC556 BC550 BC549 Transistor B C 458
2001 - bc546 fairchild

Abstract: of transistor BC548 transistor BC549 hfe for bc548 npn transistor BC549 input Transistor BC546/547/548/549/550 BC550 BC556 BC560 BC547 FAIRCHILD
Text: . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , BC546/547/ 548 /549/550 BC546/547/ 548 /549/550 Switching and Applications · High Voltage: BC546 , ) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ° C TSTG Storage Temperature -65 ~ 150 ° C : BC546/547 : BC548/549/550 Electrical Characteristics Ta=25° C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test


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PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 bc546 fairchild of transistor BC548 transistor BC549 hfe for bc548 npn transistor BC549 input Transistor BC546/547/548/549/550 BC550 BC556 BC560 BC547 FAIRCHILD
2006 - Not Available

Abstract: No abstract text available
Text: : 10MHz flat. • Y/ C time difference: 2ns maximum. • Signal dynamic range: 170 IRE. • Supports all , . Specifications Maximum Ratings at Ta = 25° C Parameter Maximum supply voltage Allowable power dissipation Symbol Conditions Ratings VCC max Unit 15.0 Pdmax Ta≤75° C , Mounted on a board* V , Recommended Operating Conditions at Ta = 25° C Parameter Symbol Recommended supply voltage A Operating , and B. An external operation circuit with a PNP transistor for voltage drop is recommended for the


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PDF ENA0220 LA7138M LA7138M -80dB. 10MHz A0220-13/13
2006 - C10H

Abstract: LA7138M GSH1
Text: : 10MHz flat. · Y/ C time difference: 2ns maximum. · Signal dynamic range: 170 IRE. · Supports all types , Ratings at Ta = 25° C Parameter Maximum supply voltage Allowable power dissipation Symbol , Operating temperature *: Topr -20 to +75 ° C Storage temperature Tstg -40 to +150 ° C , -5467 No.A0220-1/13 LA7138M Recommended Operating Conditions at Ta = 25° C Parameter Symbol , recommended supply voltages A and B. An external operation circuit with a PNP transistor for voltage drop is


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PDF ENA0220 LA7138M LA7138M -80dB. 10MHz A0220-13/13 C10H GSH1
2008 - Not Available

Abstract: No abstract text available
Text: L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M32 is designed for L-Band radar systems operating over the instantaneous bandwidth of 1.200 - 1.400 GHz. While operating in class C mode this common base device supplies , ) G (dB) Nc (%) 1.5:1 1200 46.4 2.13 17 4 10.65 54.8 S P 1300 48 2.19 21 4 10.78 54.8 S P 1400 D2530-5 Po W) VSWR 2.1 52


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PDF IB1214M32 IB1214M32 IB1214M32-REV-NC-DS-REV-B
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