The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
BD9V101MUF-LB BD9V101MUF-LB ECAD Model ROHM Semiconductor 16V to 60V, 1A 1ch 2.1MHz Synchronous Buck Converter Integrated FET (Industrial Grade)
BD9G102G-LB BD9G102G-LB ECAD Model ROHM Semiconductor 6V to 42V, 0.5A 1ch Simple Buck Converter Integrated FET (Industrial Grade)
BD9G341AEFJ BD9G341AEFJ ECAD Model ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET
BD9A600MUV BD9A600MUV ECAD Model ROHM Semiconductor 2.7V to 5.5V Input, 6A Integrated MOSFET, Single Synchronous Buck DC/DC Converter
BD9G341AEFJ-LB BD9G341AEFJ-LB ECAD Model ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET (Industrial Grade)
BD9C601EFJ BD9C601EFJ ECAD Model ROHM Semiconductor 4.5V to 18V Input, 6.0A Integrated MOSFET 1ch Synchronous Buck DC/DC Converter

transistor bf 175 Datasheets Context Search

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1412D

Abstract: UDN2983A equivalent 1411d M54522P equivalent DARLINGTON SINK DRIVER TLP251 equivalent M54563P equivalent ULN2804A application relay driver ic ULN2804 td62304ap
Text: TD62318 TD62064 TD62308 TD62164 TD62318 BP,BP-1 BF 80 V VCEF Parasitic Transistor , Tr.Array TD62500 to 599 D-MOS Transistor TD62000 to 199 TD62300 to 499 Bipolar Transistor , Output Output Channel 1. TRANSISTOR ARRAY IC 1. TRANSISTOR ARRAY IC 2. BASIC TRANSISTOR AMPLIFIER CIRCUIT 2. BASIC TRANSISTOR AMPLIFIER CIRCUIT COMMON INPUT OUTPUT GND EXAMPLE , RESISTOR) OPERATE DIRECTLY WITH 6V-15V CMOS Cross Reference of Standard Transistor Array Cross


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PDF ULN2000 TD62xxx TD62Mxxx TB62xxx RS232C RS422 25degC) TD62445FN SSOP18-P-225-0 1412D UDN2983A equivalent 1411d M54522P equivalent DARLINGTON SINK DRIVER TLP251 equivalent M54563P equivalent ULN2804A application relay driver ic ULN2804 td62304ap
BF115

Abstract: TLO 721 BF 145 transistor transistor bc 7-40
Text: : BF 569 R-GS 08. In case of standard taping, the transistor orientation on the tape is shown in Fig , 000515b 1 ALGG n j / - y r i B F115 Silicon NPN Epitaxial Planar RF Transistor Applications , current V'c8 = 2 0 V ,r.mb= 175 °C Collector-base breakdown voltage l, - 1 0 | iA Collector-emitter , 0.01, /p -0.3 ms T1.2/518.0484 El Vb e »ta 145 175 - 5 5 . .+ 175 Min. Typ. CBO 0.5 50 30 , A L C G BF 115 7 S Ì/- /S " i i 4 3452 b -0 3 TELEFUNKEN ELECTRONIC 7


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PDF 000515b 569-GS BF115 TLO 721 BF 145 transistor transistor bc 7-40
silicon npn planar rf transistor sot 143

Abstract: transistor AC 237 BFS 65 BFS62 F-05 Telefunken u 237 sot-23 TRANSISTOR MARKING 76 c10 g sot-23 sot-23 MARKING CODE GS 5 bc238c
Text: Technologies BFS62 Silicon NPN Epitaxial Planar RF Transistor Applications: General up to the VHF range , . 40 25 4 25 2 200 260 175 -65.+ 175 Typ. V V V mA mA mW mW °C °C Max. 650 K/W 500 K/W , Type Code for TO-92 Transistors 06 'Z - I T Orientation of transistor on tape11 Additional marking for specials31 ') 06 » View on flat side of transistor , view on gummed tape 05 = View on round side of transistor , view on gummed tape Additional marking" 0": taping without paper film Additional


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PDF DDD53m HAL66 BFS62 500WW ft-11 569-GS 000s154 if-11 silicon npn planar rf transistor sot 143 transistor AC 237 BFS 65 BFS62 F-05 Telefunken u 237 sot-23 TRANSISTOR MARKING 76 c10 g sot-23 sot-23 MARKING CODE GS 5 bc238c
catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Text: -40 40- 120 -150 -1,5 500/50 200 175 * 229 *2N 2904 A TO-39 600 -60 40- 120 -150 -1,5 500/50 200 175 , -1.5 500/50 200 200* 229 *2N 2906 TO-18 400 -40 40-120 -150 -1,6 500/50 200 175 * 235 *2N 2906 A TO-18 400 -60 40- 120 -150 -1.6 500/50 200 175 * 235 *2N 2907 TO-18 400 -40 100-300 -150 -1,6 500/50 200 200 , ) IVCER* *2iE y ic (mA) VCEsat / (V) / IC/lB (mA) n (MHz) See page Voir page min max min BF 179 C TO-39 0,6 250* 20 20 120 8 497 BF 257 TO-39 5 (1) 160 25 30 i 30/6 110 § 565 BF 258 TO-39 5


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BF167

Abstract: transistor BF 37
Text: OOOSlbO i ALGG B F 167 Silicon NPN Planar RF Transistor Applications! Controlled video IF , 4 25 3 130 175 -6 5 .+ 1 7 5 Min. Typ. Max. 1000 V V V mA mA mW °C °C rl r.9 K/W T1 , 3454 B-05 TELEFUNKEN ELECTRONIC Ö1C T > ö'teOCHb DDGSlb2 7 * A L 6 6 BF 167 I , fi^EOD^b OQDSlbB ^ AL6G BF 167 8 3456 B-07 TELEFUNKEN ELECTRONIC 7. Taping and Reeling ^ , forTO-92 Transistors Orientation of transistor on tape1 1 Additional marking for specialsa ) ') 06


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PDF 569-GS BF167 transistor BF 37
BFY88

Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Text: T- 3/-/S~~ BFY 88 IALGG Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier , JEDEC TO 72 Weight max. 0.5 g 'ESO 40 25 3.5 25 V V V mA '»is "thJA Min. 175 175 -65.+175 , -92 Transistors 06 'Z - I T Orientation of transistor on tape11 Additional marking for specials31 ') 06 » View on flat side of transistor , view on gummed tape 05 = View on round side of transistor , view on , tape in special box. Marking for orientation of transistor not necessary, because box can be opened on


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PDF i200Rb D0DS332 ft-11 569-GS 000s154 hal66 if-11 BFY88 Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
BQ 15 Transistor

Abstract: marking 601 sot transistor bf 222 Electronic car ignition circuit
Text: standard taped: BF 5 69 R-G S 08. In case of standard taping, the transistor orienta tion on the tape is , transistors as reverse ta ping; BF 569 R-GS 07. In case of reverse taping, the transistor orientation on , c n b ooo^bos s AL66 . S 601 T T -3 3 -a ? Silicon NPN Darlington Power Transistor , current Total power dissipation Tm , SS100°C VCE0 *c ^BM 400 15 4 62.5 100 175 - 6 5 . . . + 175 V , of transistor on tape1 1 Additional marking for specials5 1 *i 0 6 * View on flat side of transistor


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PDF SS100 BQ 15 Transistor marking 601 sot transistor bf 222 Electronic car ignition circuit
bf185

Abstract: telefunken ra 200 amplifier transistor bc 7-40 transistor bf 185 transistor marking c y
Text: transistors as standard taped: BF 569 R-GS 08. In case of standard taping, the transistor orientation on the , ta ping: BF 569 R-GS 07. In case of reverse taping, the transistor orientation on the tape Is shown , Technologies 7= 3/-/S- B F 185 Silicon NPN Epitaxial Planar RF Transistor Applications: General and , 30 V V V 20 5 30 1 mA mA mW °C °c 145 175 - 5 5 . . . + 175 ^ B tfl Min. Typ , transistor on tape1 1 Additional marking for specialsa) ') 06 * View on flat side of transistor , view on


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PDF 569-GS bf185 telefunken ra 200 amplifier transistor bc 7-40 transistor bf 185 transistor marking c y
Transistor BFT 96

Abstract: bft96 transistor 3884 transistor BC 176 Telefunken u 237 transistor fet 3884
Text: q0q532q t BFT 96 Silicon PNP Planar BF Transistor Applications: RF amplifier up to GHz range specially , £/576.0484E1 3613 F—10 175 telefunken electronic BFT 96 fllc » ■fl^edq^b dqqs321 1 balgg Thermal , Order-No. of Type Code for TO-92 Transistors 06 'Z - I T Orientation of transistor on tape11 Additional marking for specials31 ') 06 » View on flat side of transistor , view on gummed tape 05 = View on round side of transistor , view on gummed tape Additional marking" 0": taping without paper film


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PDF q0q532q 0484E1 ft-11 569-GS 000s154 hal66 if-11 Transistor BFT 96 bft96 transistor 3884 transistor BC 176 Telefunken u 237 transistor fet 3884
BF173

Abstract: BF173 Transistor BF 145 transistor 569-GS transistor bc 7-40
Text: taped: BF 569 R-GS 08. In case of standard taping, the transistor orientation on the tape is shown in , ta ping: BF 569 R-GS 07. In case of reverse taping, the transistor orientation on the tape Is shown , fiRSDGTb OOGSlbM 0 IAL6G BF173 Silicon NPN Epitaxial Planar RF Transistor Applications , DC characteristics ^CBO ^CEO ^EBO ^c 40 25 4 25 2 200 175 -6 5 .+ 1 7 5 Min. Typ. Max. 650 , filC D fi^SDCnb 00051b? b AL 66 7 ^ 3 / - / S - ! BF 173 ' 22 I S I · / / / / / i r


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PDF BF173 569-GS BF173 BF173 Transistor BF 145 transistor transistor bc 7-40
transistor BUX 48

Abstract: transistor BU 2727 transistor bc 207 npn bux48 BUx4 BUX 208 bc 206 transistor W301 transistor BUX BUX code marking
Text: ; BF 569 R-GS 07. In case of reverse taping, the transistor orientation on the tape is shown in Fig. 6 , dissipation 175 W 301 - Collector connected with case Standard metal case 3 B 2 DIN 41 872 , resistance Junction case "EBO 'CAV 15 20 '6AV 'BM BM 5 10 4 175 200 »tfl - 6 5 .,+ 2 0 , transistor on tape1 1 Additional marking for specials5 1 *i 06 *View on flat side of transistor , view on gummed tape 05 = View on round side of transistor , view on gummed tape s) Additional marking " 0


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PDF 15A3DIN E--07 transistor BUX 48 transistor BU 2727 transistor bc 207 npn bux48 BUx4 BUX 208 bc 206 transistor W301 transistor BUX BUX code marking
buv48

Abstract: BC 171 NPN transistor transistor buv transistor bc 237c BUV 76 BUV48I transistor BUV 92
Text: 1000 V VCE> 850 V 1000 V CE" Min. ·to 150 175 - 6 5 .+ 175 W °C °C 1.0 Typ. Max. K/W , number. Example; BC 238 C Order-No. of Type Code for TO-92 Transistors Orientation of transistor on tape1 1 Additional marking for specials5 1 1106 *View on flat side of transistor , view on gummed tape 05 = View on round side of transistor , view on gummed tape s) Additional marking " 0 * : Taping without , transistor not necessary, because box can be opened on top or botton. Example for order No.: B C 237C D U Z


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PDF 15A3DIN buv48 BC 171 NPN transistor transistor buv transistor bc 237c BUV 76 BUV48I transistor BUV 92
BUV48T

Abstract: transistor WW 179 c10A TRANSISTOR transistor bf 179 TCA 321 12A3 D-07 T0126 SOT-23 marking p03 marking va transistors
Text: transistors as standard taped: BF 569 R-GS 08. In case of standard taping, the transistor orientation on the , 400 850 7 15 30 5 20 4 V V V A A A A A T1.2/1529.0888 E 2696 D—03 175 TELEFUNKEN , Min. 150 175 -65.+175 1.0 Typ. Max. 'CES 'cES Ww" 400 (BR)EBO V 11 CEtat BEsat "FE w °c , . Example: Order-No. of Type BC 238 C DU Code for TO-92 Transistors 06 ¡Z Orientation of transistor on tape11 Additional marking for specials51 •I 06 «■View on flat side of transistor , view on gummed


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PDF T0126 15A3DIN BUV48T transistor WW 179 c10A TRANSISTOR transistor bf 179 TCA 321 12A3 D-07 T0126 SOT-23 marking p03 marking va transistors
BF 331 TRANSISTORS

Abstract: transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c
Text: transistors as standard taped: BF 569 R-GS 08. In case of standard taping, the transistor orientation on the , 0005330 2 ALlSG T -sr-sr BFX89 Silicon NPN Epitaxial Planar RF Transistor Applications: General , 30 15 2.5 25 50 175 200 -6 5 .+ 2 0 0 Min. Typ. Max. 880 580 V V V mA mA mW °C °C ^thJA RthJ0 , order number. Example: BC238C Order-No. of Type Code forTO-92 Transistors Orientation of transistor on tap e1 1 Additional marking for specialsa ) ') 06 * View on flat side of transistor , view on gummed


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PDF BFX89 569-GS BF 331 TRANSISTORS transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c
Transistor BFR 96

Abstract: TRANSISTOR BC 157 TRANSISTOR BC 158 transistor K 3596 TRANSISTOR as BC 158 BFR96S transistor bc 238 b silicon npn planar rf transistor sot 143 transistor B 722 Telefunken u 237
Text: transistors as standard taped: BF 569 R-GS 08. In case of standard taping, the transistor orientation on the , S Silicon NPN Planar RF Transistor Applications; RF-ampllfier up to GHz range specially for wide , «>5013 3 DIN 41867 ~JEDECT0 50 Weight max. 0.25 g Min. 20 15 3 100 700 175 -65.+175 Typ. V V V mA mW , -92 Transistors 06 'Z - I T Orientation of transistor on tape11 Additional marking for specials31 ') 06 » View on flat side of transistor , view on gummed tape 05 = View on round side of transistor , view on gummed tape


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PDF ft-11 569-GS 000s154 hal66 if-11 Transistor BFR 96 TRANSISTOR BC 157 TRANSISTOR BC 158 transistor K 3596 TRANSISTOR as BC 158 BFR96S transistor bc 238 b silicon npn planar rf transistor sot 143 transistor B 722 Telefunken u 237
transistor BF 258

Abstract: No abstract text available
Text: 1.75 BA12004B 2.53 5 BA12002 10.4 12 1.91 2.4 Input voltage BA12003B/ BF , Standard ICs High voltage, high current Darlington transistor array B A 1 2 0 0 1 B /B A 1 2 0 , , BA12003BF, and BA12004B are high current transistor arrays featuring high voltage withstand resistance and , Symbol Min. - Max. DC current gain 1000 hFE - 0 - BA12002 BA12003B/ BF VlN , / BF VlN - BA12004B BA12002 0.88 1.3 0.90 1.35 0.39 0.5 0 50 1.73


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PDF BA12001B, BA12002, BA12003B, BA12003BF, BA12004B BA12004B) 500mA, transistor BF 258
TRANSISTOR BC 136

Abstract: TRANSISTOR SOT-23 marking JE
Text: transistors as standard taped: BF 569 R-GS 08. In case of standard taping, the transistor orientation on the , reverse ta ping: BF 569 R-GS 07. In case of reverse taping, the transistor orientation on the tape is , G G BFR 96 T 'J /-U Silicon NPN Planar RF Transistor Applications: RF-ampllfier up to GHz , V mA mA mW °C °C Max. 200 K/W 15 3 90 150 625 150 + 175 Typ. DC characteristics 7j = 25 °C , transistor on tape1 1 Additional marking for specialsa ) ') 06 * View on flat side of transistor , view on


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PDF JEDECTO50 569-GS TRANSISTOR BC 136 TRANSISTOR SOT-23 marking JE
2001 - ta8493af

Abstract: LB-29
Text: / BF contain in its upper stage a discrete power transistor (P-ch-MOS) and uses direct PWM control , 175 °C Note2: this is not tested. 5 2001-08-30 TA8493F/AF/ BF Function Table Forward , when Tj = 175 °C (typ.) (according to design specification) 14 2001-08-30 TA8493F/AF/ BF , TA8493F/AF/ BF Toshiba Bipolar Linear Integrated Circuit Multi-Chip TA8493F, TA8493AF, TA8493BF , built-in) Direct PWM control system Drive system: 120°drive system (TA8493F/ BF ) : 180°drive system


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PDF TA8493F/AF/BF TA8493F, TA8493AF, TA8493BF TA8493F/ 2SJ465 ta8493af LB-29
2002 - Not Available

Abstract: No abstract text available
Text: / BF contain in its upper stage a discrete power transistor (P-ch-MOS) and uses direct PWM control , 175 °C Note2: this is not tested. 5 2002-01-31 TA8493F/AF/ BF Function Table Forward , when Tj = 175 °C (typ.) (according to design specification) 14 2002-01-31 TA8493F/AF/ BF , TA8493F/AF/ BF Toshiba Bipolar Linear Integrated Circuit Multi-Chip TA8493F, TA8493AF, TA8493BF , built-in) Direct PWM control system Drive system: 120°drive system (TA8493F/ BF ) : 180°drive system


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PDF TA8493F/AF/BF TA8493F, TA8493AF, TA8493BF TA8493F/ 2SJ465
Not Available

Abstract: No abstract text available
Text: Standard ICs High voltage, high current Darlington transistor array B A 1 2 0 0 1 B / B A 12002 / B A 1 2 0 0 3 B / B A 1 2 0 0 3 BF / B A 1 2 0 0 4 B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high voltage withstand resistance and , -►I- o C O M IN o 1 W \T - T< < Z — P -o O U T Fig.3 BA12003B / BF Fig , BA12003B / BF VlN — 1.3 2 Vce = 2V, BA12004B 2.53 = 350mA 10.4 2.4 Iout


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PDF BA12001B, BA12002, BA12003B, BA12003BF, BA12004B BA12004B) 500mA,
2002 - la brushless driver

Abstract: TA8493AF 2SJ465 TA8493BF TA8493F VC2019
Text: / BF contain in its upper stage a discrete power transistor (P-ch-MOS) and uses direct PWM control , TA8493F/AF/ BF Toshiba Bipolar Linear Integrated Circuit Multi-Chip TA8493F, TA8493AF, TA8493BF , ) · Direct PWM control system · Drive system: 120°drive system (TA8493F/ BF ) · Built-in , (TA8493AF) 1 2002-01-31 TA8493F/AF/ BF Block Diagram VCC 5V La (G) Lb (G) Lc (G) 2 , 2SJ465 ´ 3 9 pin: N.C. 2 2002-01-31 TA8493F/AF/ BF PIN Assignment Terminal No. Terminal


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PDF TA8493F/AF/BF TA8493F, TA8493AF, TA8493BF TA8493F/ 2SJ465 la brushless driver TA8493AF TA8493BF TA8493F VC2019
TA8493AF

Abstract: TA8493BF TA8493F 2SJ465
Text: / BF contain in its upper stage a discrete power transistor (P-ch-MOS) and uses direct PWM control , TA8493F/AF/ BF Toshiba Bipolar Linear Integrated Circuit Multi-Chip TA8493F, TA8493AF, TA8493BF , ) · Direct PWM control system · Drive system: 120°drive system (TA8493F/ BF ) · Built-in , 2003-10-07 TA8493F/AF/ BF Block Diagram VCC 5V La (G) Lb (G) Lc (G) 2 1 27 20 VCC , : N.C. 2 2003-10-07 TA8493F/AF/ BF PIN Assignment Terminal No. Terminal Symbol 1


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PDF TA8493F/AF/BF TA8493F, TA8493AF, TA8493BF TA8493F/ 2SJ465 TA8493AF TA8493BF TA8493F
2000 - bf 194 pin configuration

Abstract: BA12004B BA12001 BA12001B BA12003B BA12003BF Seven Transistor Array PNP cmos open collector array 7ch pnp DARLINGTON TRANSISTOR ARRAY
Text: transistor array BA12001B / BA12003B / BA12003BF / BA12004B The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor arrays consisting of seven circuits , OUT IN 2.7k IN 7.2k 7.2k 3k 3k GND GND Fig.1 BA12001B Fig.2 BA12003B / BF , saturation voltage VCE(sat) - 1.14 1.3 1.46 1.6 1.75 2 2.53 5 1.91 2.4 2.75 6 2.17 3.4 3.27 8 0.90 1.35 0.39 0.5 BA12003B / BF IOUT = 100mA


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PDF BA12001B BA12003B BA12003BF BA12004B BA12001B, BA12003B, bf 194 pin configuration BA12004B BA12001 Seven Transistor Array PNP cmos open collector array 7ch pnp DARLINGTON TRANSISTOR ARRAY
2003 - transistor bf 425

Abstract: Seven Transistor Array PNP BA12004B pnp DARLINGTON TRANSISTOR ARRAY pnp darlington array BF 194 pin bf 194 pin configuration PNP DARLINGTON SINK DRIVER 500ma seven transistors PNP drivers BA12001B
Text: transistor array BA12001B / BA12003B / BA12003BF / BA12004B The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor arrays consisting of seven circuits , .2 BA12003B / BF COM IN OUT 10.5k 7.2k 3k GND Fig.3 BA12004B !Absolute maximum ratings , 350mA 0.94 1.1 Output saturation voltage VCE(sat) - 1.14 1.3 1.46 1.6 1.75 , 0.5 BA12003B / BF IOUT = 100mA, IIN = 250µA IOUT = 200mA, IIN = 350µA V IOUT = 350mA, IIN


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PDF BA12001B BA12003B BA12003BF BA12004B BA12001B, BA12003B, transistor bf 425 Seven Transistor Array PNP BA12004B pnp DARLINGTON TRANSISTOR ARRAY pnp darlington array BF 194 pin bf 194 pin configuration PNP DARLINGTON SINK DRIVER 500ma seven transistors PNP drivers
transistor C 2615

Abstract: bu526 js 2617 BF56 marking EAAT transistor 526
Text: R-version transistors as reverse ta ping; BF 5 69 R-GS 07. In case of reverse taping, the transistor , Silicon NPN Power Transistor Applications: Switching mode power supply Features: · In tripple diffusion , temperature Storage temperature range M axim um therm al resistance Junction case ^IhJC 1.75 K /W "*BM Fig. 2 , 3 , 4 P.o, T l r.o * Fig. 5 Fig. 3 Fig. 3 ^CEO ^CES ^CER ^C M *c 400 900 900 10 8 4 4 86 175 -6 5 , Order-No. of Type Code for TO -92 Transistors Orientation of transistor on ta p e 1 1 Additional marking


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