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transistor bc160 Datasheets Context Search

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2012 - Not Available

Abstract: No abstract text available
Text: Number Table Description Transistor , PNP, TO-39 Part Number BC160 -16 BC161-16 Important Notice , PNP Medium Power Transistor Pin Configuration 1. Emitter 2. Base 3. Collector Features , BC160 -16 BC161-16 40 60 Collector Emitter Voltage VCEO Collector Base Voltage VCBO , V1.0 PNP Medium Power Transistor Electrical Characteristics: (Ta = +25°C unless otherwise specified) Parameter Symbol Test Condition Min. VCES IC = 100μA, VBE = 0 BC160 -16 BC161


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PDF BC160-16 BC161-16 element14
TRANSISTOR BC 157

Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES transistor bc 102 BC161 transistor f15n
Text: BC 161 BC160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN 41873). The , amplification group desired, a transistor of a current amplification group just available from stock will be , . /¡f15ns ¿^lOOKS Switching times for transistors BC160 , BC161: (-/c=100 mA; /B1 approx. -IB2 approx. 5 mA) 'on 'off <500 <650 ns ns 1) The transistor is overloaded to such an extent that the DC , AKTIENGESELLSCHAF BC160 BC 161 Total power dissipation versus temperature Ptot = MT);flth = parameter BC160 Plot


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PDF 23SbOS BC160 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P 160/BC140 Q62702-C228-S2 BC1611> TRANSISTOR BC 157 BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES transistor bc 102 BC161 transistor f15n
transistor BC 157

Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
Text: AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN , complementary transistors to BC 140 and BC 1 4 1and are available upon request as matched pairs. Type BC160 ') BC , indication of the current amplification group desired, a transistor of a current amplification group just , SIEMENS AKTIEN6ESELLSCHAF BC160 BC 161 BC 161 10 «1 0 0 ) nA Static characteristics {Tam b = 25 °C , : < Ost f r *15ns Switching times for transistors BC160 , BC161: (-/c=100 mA; fa approx. -IB2 approx. 5


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PDF BC160 BC160' 160/BC140 BC161/BC141 8C161 transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
1997 - BC161

Abstract: BC160-16 BC160 TRANSISTOR BC140 BC161-10 BC160-10 BC160 TRANSISTOR BC141 BC140 BC161-16 Philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BC160 ; BC161 PNP medium power transistors , May 12 Philips Semiconductors Product specification PNP medium power transistors BC160 , purpose applications. DESCRIPTION 1 handbook, halfpage 3 2 PNP medium power transistor in a , CONDITIONS MIN. TYP. MAX. UNIT open emitter - - -40 V - - -60 V BC160 , BC160 -10; BC161-10 63 100 160 BC160 -16; BC161-16 100 160 250 50 - -


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PDF M3D110 BC160; BC161 BC140 BC141. MAM334 SCA54 117047/00/02/pp8 BC161 BC160-16 BC160 TRANSISTOR BC140 BC161-10 BC160-10 BC160 TRANSISTOR BC141 BC161-16 Philips
Not Available

Abstract: No abstract text available
Text: (Replaces BC160 -16/D) MOTOROLA © Motorola, Inc. 1997 B C 161-16 ELECTRICAL CHARACTERISTICS (Ta = 25 , operating area curves indicate lc~VCE limits of the transistor that must be observed for reliable operation


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PDF BC161-16/D BC161-16 C161-16/D
2N4036

Abstract: transistor 2N2219 TRANSISTOR BC140 2N918 2N4427 2N3866 2N2708 2N2405 BC177 NPN transistor ZT Ferranti
Text: * TO-39 BC161 BC140 80 40 1000 1.0 1000 100 40 250 100 50 50 3700* TO-39 BC160 BFY50 80 35 1000 0.2 , 162 10 150 10 300 TO-18 ZT81 ZT182 45 35 500 0.2 10 1 75 260 10 150 10 300 TO-18 ZT82 BC160 40 40 , TO-18 - "Typical MC7 PLANAR SWITCHING PLANAR SWITCHING TRANSISTOR SELECTOR CHART Devices listed


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PDF 2N918 2N2708 BUY92 BUY91 BUY90 2N4036 2N4037 TP-39 transistor 2N2219 TRANSISTOR BC140 2N4427 2N3866 2N2405 BC177 NPN transistor ZT Ferranti
1997 - TRANSISTOR BC140

Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC141 BC140 BC140-16 bc141-16 BC141-10 BC140-10 BC141 philips BC141
Text: transistor in a TO-39 metal package. PNP complements: BC160 and BC161. 2 3 1 MAM317 Fig


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PDF M3D110 BC140; BC141 BC160 BC161. MAM317 SCA54 117047/00/02/pp8 TRANSISTOR BC140 TRANSISTOR pnp BC140 TRANSISTOR BC141 BC140 BC140-16 bc141-16 BC141-10 BC140-10 BC141 philips BC141
1997 - BC161-16

Abstract: 1N916 BC160 BC161 BC161 equivalent
Text: : Pulse Duration = 300 ms, Duty Cycle = 2.0%. (Replaces BC160 ­16/D) Motorola Small­Signal , 2.0 The safe operating area curves indicate IC­VCE limits of the transistor that must be observed


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PDF BC161 BC161-16 BC161-16 1N916 BC160 BC161 equivalent
2002 - transistor 2N3563

Abstract: 2SK30 2n3819 cross reference 2sk41e 2SA726 transistor 2sc1417 2SC1026 2Sa1026 2SC2259 BC150 transistor
Text: KSC945 KSC945 KSA733 Industry Part Number BC154 BC157 BC158 BC159 BC160 BC161 BC167 BC168 BC169 BC170


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bf471

Abstract: smd npn 2n2222 BC369 BC200 BF470 BSY95A tunnel diode transistor bc547 PH in metal detector BST60 EQUIVALENT TRANSISTOR bc549c
Text: 45 20 20 100 300 BC140 BC141 n-p-n TO-39 40 60 1000 3700 45* BC160 , n TO-18 TO -18 TO-18 TO-39 TO-39 45 20 20 40 60 BC160 BC161 BC177 BC178 BC179 , ; variable capacitance TRANSISTOR ; low power, audio frequency (Rt h j-mb > 15 K/W) TRANSISTOR ; power, audio frequency (Rth j-mb ^ 15 K/W) DIODE; tunnel TRANSISTOR ; low power, high frequency (Rth j-mb > 15 K/W) M ULTIPLE OF DISSIMILAR DEVICES - MISCELLANEOUS; e.g. oscillator DIODE; magnetic sensitive TRANSISTOR


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PDF 2PC1815L 2PC1815 10xx0. 7Z88986 bf471 smd npn 2n2222 BC369 BC200 BF470 BSY95A tunnel diode transistor bc547 PH in metal detector BST60 EQUIVALENT TRANSISTOR bc549c
2001 - Transistor 2N2905A

Abstract: BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92
Text: Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor ) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , CHARACTERISTICS - MUN5311DW1T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = , CHARACTERISTICS - MUN5311DW1T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC , TYPICAL ELECTRICAL CHARACTERISTICS - MUN5312DW1T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE


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PDF MUN5311DW1T1 Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 Transistor 2N2905A BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92
bc107

Abstract: BC350 BSX19 equivalent transistor bf 175 2N2868 BC451 2N3020 transistor BC287 SHORT DATA ON 2N744 sgs-thomson rf transistor to-117
Text: . BC160 . B C 161. BC177. BC 178 , High Gain Transistor 1400 70 4.5 70 - - - - R.F. Amplifier 750 50 4 , Transistor 500 Package Page 500 2N3137 500 f 800 2N5109 30 » (MHz) 1000 , BC184 BC394 BFY76 BFR17 BC140 BC160 BC394 BC107 87 199 129 49 57 BC185 BC186 BC187 , 61 BC107 BC108 BC109 BC179 BC177 37 37 37 61 61 BC157 BC158 BC159 BC160 BC161


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PDF OT-23 bc107 BC350 BSX19 equivalent transistor bf 175 2N2868 BC451 2N3020 transistor BC287 SHORT DATA ON 2N744 sgs-thomson rf transistor to-117
2001 - BC237

Abstract: mps4123 opposite transistor BC107 specifications MPS3646 mps3646 equivalent transistor equivalent 2n5551 transistor equivalent book 2N5401 2n3819 equivalent transistor transistor 2n5551 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor NPN Silicon COLLECTOR 3 2 BASE 1 , TIME C < COPT C=0 Figure 3. QT Test Circuit NOTE 1 When a transistor is held in a conductive state by a base current, IB, a charge, QS, is developed or "stored" in the transistor . QS may be written , . The charge required to turn a transistor "on" to the edge of saturation is the sum of Q1 and QV which is defined as the active region charge, QA. QA = IB1tr when the transistor is driven by a constant


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PDF MPS3646 226AA) Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 mps4123 opposite transistor BC107 specifications MPS3646 mps3646 equivalent transistor equivalent 2n5551 transistor equivalent book 2N5401 2n3819 equivalent transistor transistor 2n5551 equivalent
2001 - bc547 spice model

Abstract: SPICE model BC237 BC238 spice model BF256B spice model bc237 SPICE bc237 SPICE model MRF9411 EQUIVALENT BC238 spice BC559 SPICE BF245 A spice
Text: . It allows the external transistor to have its emitter/source directly grounded and still operate with , , and RF transistor current in "STANDBY." This device is intended to replace a circuit of three to six , VENBL = VCC TA = 25°C 50 100 150 200 250 EXTERNAL TRANSISTOR DC BETA @ IC3 300 IC3 = 15 mA IC3 = 10 mA , °C Figure 8. DVref versus External Transistor DC Beta @ IC3 5.0 D I C 3 (%) 0 ­5.0 IC3 = 15 mA IC3 = 10 mA IC3 = 3 mA IC3 = 1 mA 0 50 250 100 150 200 HFE, EXTERNAL TRANSISTOR DC BETA 300 ­10 ­15


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PDF curr218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 bc547 spice model SPICE model BC237 BC238 spice model BF256B spice model bc237 SPICE bc237 SPICE model MRF9411 EQUIVALENT BC238 spice BC559 SPICE BF245 A spice
2001 - transistor 2N5458

Abstract: BC237 BC848 2N930 NPN transistor FREE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor ) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , ) MUN2211T1 SERIES Motorola Preferred Devices NPN SILICON BIAS RESISTOR TRANSISTOR 3 2 1 CASE


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PDF Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 transistor 2N5458 BC237 BC848 2N930 NPN transistor FREE
2001 - transistor marking wt

Abstract: BC237 modes of operation of transistor BC177 motorola application note AN-569 2N2222 MPS2222 npn transistor 2n3819 equivalent transistor BC547 collector characteristic curve hie for bc547b MOTOROLA TRANSISTOR 2N3819
Text: 2RS2 12 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10­23 j/°K) T , transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall , Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input , µs 1.0 s The safe operating area curves indicate IC­VCE limits of the transistor that must be


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PDF MPS6521* MPS6523 MPS6521 MPS6523 CAS218A MSC1621T1 MSC2404 MSD1819A transistor marking wt BC237 modes of operation of transistor BC177 motorola application note AN-569 2N2222 MPS2222 npn transistor 2n3819 equivalent transistor BC547 collector characteristic curve hie for bc547b MOTOROLA TRANSISTOR 2N3819
2001 - BC237

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor ) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , ) MUN5111T1 SERIES Motorola Preferred Devices PNP SILICON BIAS RESISTOR TRANSISTOR 3 1 2 CASE


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PDF 70/SOT Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237
2001 - BC237

Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor ) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack


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PDF SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1
2001 - BC237

Abstract: 2N2904 PNP Transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon COLLECTOR 3 2 , ) 4KTRS ) In 2RS2 12 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 , µs 1.0 s The safe operating area curves indicate IC­VCE limits of the transistor that must be , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack


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PDF MPS3906 226AA) 00218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2N2904 PNP Transistor
2001 - BC237

Abstract: transistor bc107b equivalent BC107B, MOTOROLA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon MPSA20 , en2 ) 4KTRS ) In 2RS2 12 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant , curves indicate IC­VCE limits of the transistor that must be observed for reliable operation. Collector , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack


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PDF MPSA20 226AA) CHARAC218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 transistor bc107b equivalent BC107B, MOTOROLA
2001 - BC237

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor ) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , SERIES Motorola Preferred Devices PNP SILICON BIAS RESISTOR TRANSISTOR · The SC­59 package can be


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PDF Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237
2001 - BC237

Abstract: MPS-A70 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor PNP Silicon COLLECTOR 3 2 BASE 1 , the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the , limits of the transistor that must be observed for reliable operation. Collector load lines for specific , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box. ROUNDED SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style P fan


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PDF MPSA70 226AA) CHARACTERI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MPS-A70 equivalent
2001 - BF245 TRANSISTOR

Abstract: transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SmallSignal Darlington Transistor This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is , DARLINGTON TRANSISTOR SURFACE MOUNT 4 1 BASE 1 2 3 EMITTER 3 CASE 318E-04, STYLE 1 TO , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box. ROUNDED SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style P fan


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PDF OT-223 PZTA64T1 inch/1000 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 BF245 TRANSISTOR transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819
2001 - SOT23 JEDEC standard orientation pad size

Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the , -223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT 4 1 2 3 BASE 1 3 EMITTER CASE 318E-04, STYLE 1 TO , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box. ROUNDED SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style P fan


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PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
2001 - 2n2904 2n2905

Abstract: BC237 BC547 hie hre hfe hie for bc547b K 2056 BC338 hie hre hfe TO-226-AE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon COLLECTOR 3 2 , Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input , limits of the transistor that must be observed for reliable operation. Collector load lines for specific , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box. ROUNDED SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style P fan


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PDF MPS3904 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2904 2n2905 BC237 BC547 hie hre hfe hie for bc547b K 2056 BC338 hie hre hfe TO-226-AE
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