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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor bc icbo nA npn Datasheets Context Search

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2004 - 1BS transistor

Abstract: No abstract text available
Text: cutoff current ICBO = f (TA ) VCB = 25V 400 mW 10 5 BC 817/818 EHP00221 CBO nA 10 4 , BC817UPN NPN /PNP Silicon Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN /PNP 5 6 , 1.2 V IEBO 100 nA ICBO 50 µA ICBO 100 nA V(BR)EBO 5 V(BR)CBO 50 V(BR)CEO 45 V typ. max. Unit AC , 3 BC 817/818 EHP00223 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10 10 3 BC 817


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PDF BC817UPN VPW09197 EHA07177 1BS transistor
2005 - Not Available

Abstract: No abstract text available
Text: cutoff current ICBO = f (TA ) VCB = 25V 400 mW 10 5 BC 817/818 EHP00221 CBO nA 10 4 , BC817UPN NPN /PNP Silicon Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN /PNP 5 6 , 1.2 V IEBO 100 nA ICBO 50 µA ICBO 100 nA V(BR)EBO 5 V(BR)CBO 50 V(BR)CEO 45 V typ. max. Unit AC , 3 BC 817/818 EHP00223 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10 10 3 BC 817


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PDF BC817UPN VPW09197 EHA07177
2005 - Not Available

Abstract: No abstract text available
Text: BC817U NPN Silicon Transistor Array For AF input stages and driver applications High current , saturation voltage 1) IC = 500 mA, IB = 50 mA VCEsat VBEsat hFE 160 100 250 400 0.7 1.2 V IEBO 100 nA ICBO 50 µA ICBO 100 nA V(BR)EBO 5 V(BR)CBO 50 V(BR)CEO 45 V typ. max. Unit AC Characteristics , % 2 Nov-29-2001 BC817U Total power dissipation Ptot = f (TS ) Collector cutoff current ICBO = f (TA ) VCB = 25V 10 5 BC 817/818 EHP00221 400 mW CBO nA 10 4 300 Ptot 250


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PDF BC817U VPW09197 EHA07178
1994 - Q62702-C2320

Abstract: C2320 BC 170 transistor transistor 6cs TRANSISTOR c2324 BC817W transistor bc icbo nA npn transistor marking A02 TRANSISTOR BC c2324 C2324
Text: BC 817W, BC 818W NPN Silicon AF Transistor l For general AF applications l High collector current l High current gain l Low collector-emitter saturation voltage l Complementary types: BC 807W, BC 808W (PNP) Type Marking BC 817-16W BC 817-25W BC 817-40W BC 818-16W BC 818-25W BC , - 0.7 ICBO IEBO nA µA nA hFE VCEsat V VBEsat V - 1.2 fT MHz , Base current Total Power dissipation TS=130°C Junction temperature Storage temperature range BC


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PDF 17-16W 17-25W 17-40W 18-16W 18-25W 18-40W Q62702-C2320 Q62702-C2278 Q62702-C2321 Q62702-C2322 Q62702-C2320 C2320 BC 170 transistor transistor 6cs TRANSISTOR c2324 BC817W transistor bc icbo nA npn transistor marking A02 TRANSISTOR BC c2324 C2324
2004 - Not Available

Abstract: No abstract text available
Text: BC817U NPN Silicon Transistor Array For AF input stages and driver applications High current , saturation voltage 1) IC = 500 mA, IB = 50 mA VCEsat VBEsat hFE 160 100 250 400 0.7 1.2 V IEBO 100 nA ICBO 50 µA ICBO 100 nA V(BR)EBO 5 V(BR)CBO 50 V(BR)CEO 45 V typ. max. Unit AC Characteristics , % 2 Nov-29-2001 BC817U Total power dissipation Ptot = f (TS ) Collector cutoff current ICBO = f (TA ) VCB = 25V 10 5 BC 817/818 EHP00221 400 mW CBO nA 10 4 300 Ptot 250


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PDF BC817U VPW09197 EHA07178
MPS5172

Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR AMPLIFIER TRANSISTOR MPS5172 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS(Ta , nA 500 0.75 0.5 V 1.2 V 0.25 V Page 1 of 4 NPN SILICON PLANAR AMPLIFIER TRANSISTOR MPS5172 TO-92 Plastic Package E BC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless , Collector Emitter Voltage VCEO IC=10mA,IB=0 Collector Cut off Current ICBO VCB=25V, IE = 0


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PDF ISO/TS16949 MPS5172 C-120 MPS5172 180302D
2002 - Not Available

Abstract: No abstract text available
Text: Certified Manufacturer NPN SILICON PLANAR AMPLIFIER TRANSISTOR MPS5172 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise) SYMBOL VALUE UNITS , 0.25 V Page 1 of 4 NPN SILICON PLANAR AMPLIFIER TRANSISTOR MPS5172 TO-92 Plastic Package , =10mA,IB=0 Collector Cut off Current ICBO VCB=25V, IE = 0 100 ICES VCB=25V, IE = 0 Ta , =1.0mA Base Emitter (On) Voltage VBE(on) IC=10mA,IB= 10mA UNITS ICBO VCE(sat) IC=10mA,IB


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PDF QSC/L-000019 MPS5172 C-120 MPS5172 180302D
2003 - MPS5172

Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR AMPLIFIER TRANSISTOR MPS5172 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM , V 100 nA µA nA nA 500 0.75 0.5 V 1.2 V 0.25 V Page 1 of 4 NPN SILICON PLANAR AMPLIFIER TRANSISTOR MPS5172 TO-92 Plastic Package E BC ELECTRICAL , ICBO VCB=25V, IE = 0 100 ICES VCB=25V, IE = 0 Ta= 100ºC VCE=50V, VBE=0 10 100


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PDF MPS5172 200omers C-120 MPS5172 180302D
mps5172

Abstract: No abstract text available
Text: 1 of 4 NPN SILICON PLANAR AMPLIFIER TRANSISTOR MPS5172 TO-92 Plastic Package E BC , Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR AMPLIFIER TRANSISTOR MPS5172 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM , Cut off Current ICBO VCB=25V, IE = 0 100 ICES VCB=25V, IE = 0 Ta= 100ºC VCE=50V, VBE , ) Voltage VBE(on) IC=10mA,IB= 10mA UNITS ICBO VCE(sat) IC=10mA,IB=1.0mA Collector Emitter


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PDF MPS5172 C-120 MPS5172 180302D
2009 - transistor 1Bs

Abstract: 1BS MARKING CODE B 817 c marking CODE 1BS infineon marking W1s marking code w1s
Text: BC817UPN NPN Silicon AF Transistor Array · For AF stages and driver applications · High current gain · Low collector-emitter saturation voltage · Two (galvanic) internal isolated NPN /PNP transistors , voltage IC = (VBEsat), hFE = 10 10 3 BC 817/818 EHP00222 Collector cutoff current ICBO = (TA) VCBO = 25 V 10 5 BC 817/818 EHP00221 C mA 150 °C 25 °C -50 °C CBO nA 10 4 10 5 2 10 , = 10 mA, IB = 0 V(BR)CEO V(BR)CBO V(BR)EBO ICBO Symbol min. 45 50 5 Values typ. max. - Unit


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PDF BC817UPN EHA07177 transistor 1Bs 1BS MARKING CODE B 817 c marking CODE 1BS infineon marking W1s marking code w1s
2002 - transistor BC 458

Abstract: BC 458 transistor transistor code 458 055 184LC transistor code 458
Text: BC184LC BC184LC Silicon NPN Small Signal Transistor (Note 1) · BVCEO = 30V (Min.) · hFE = 250 , Support Features Silicon NPN Small Signal Transistor z z BVCEO = 30V (Min.) hFE = 250 (Min.) @VCE = , mW °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO , 130 0.25 0.6 1.2 0.7 5 V V V pF MHz Min. 45 30 5 15 15 Typ. Max. Units V V V nA nA VCE(sat) VBE(sat , ) Support Sales support Quality and reliability e-mail this datasheet Design center Silicon NPN Small


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PDF BC184LC BC184LC transistor BC 458 BC 458 transistor transistor code 458 055 184LC transistor code 458
2005 - BC846UPN

Abstract: No abstract text available
Text: BC846UPN NPN /PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN /PNP 5 6 , =25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics per Transistor , 750 820 VBEsat 700 900 VCEsat 90 200 300 650 hFE 200 250 290 450 ICBO 5 ICBO 15 V(BR)EBO 5 V(BR)CES 80 V(BR)CBO 80 V(BR)CEO 65 typ. max. Unit V nA µA - mV mV 1) Pulse test: t < 300s; D


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PDF BC846UPN VPW09197 EHA07177 BC846UPN
2002 - transistor BC 458

Abstract: BC184l transistor code 458 055 BC 458 transistor transistor bc184l 184L transistor bc icbo nA npn bc184L npn 3184L BC184* transistor
Text: BC184L BC184L Silicon NPN Small Signal Transistor (Note 1) · BVCEO = 30V (Min.) · hFE = 130 , Quality and reliability e-mail this datasheet Design center Silicon NPN Small Signal Transistor , Silicon NPN Small Signal Transistor z z BVCEO = 30V (Min.) hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA , mW °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO , 0.25 1.2 0.7 5 V V V pF MHz Min. 45 30 5 15 15 Typ. Max. Units V V V nA nA Notes: 1. These ratings


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PDF BC184L 100mA BC184L transistor BC 458 transistor code 458 055 BC 458 transistor transistor bc184l 184L transistor bc icbo nA npn bc184L npn 3184L BC184* transistor
2004 - transistor bc icbo nA npn

Abstract: No abstract text available
Text: BC846PN NPN /PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN /PNP 4 5 6 , mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(ON) VBEsat VCEsat hFE ICBO ICBO V(BR)EBO V(BR)CES V(BR)CBO V(BR)CEO typ. max. Unit 65 80 80 5 - - 15 5 V nA µA - , specified Parameter Symbol Values min. DC Characteristics per Transistor Collector-emitter breakdown voltage


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PDF BC846PN VPS05604 EHA07193 OT-363 EHA07177 OT363 transistor bc icbo nA npn
2004 - marking 1ps

Abstract: No abstract text available
Text: BC847PN NPN /PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN /PNP 4 5 6 , mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(ON) VBEsat VCEsat hFE ICBO ICBO V(BR)EBO V(BR)CES V(BR)CBO V(BR)CEO typ. max. Unit 45 50 50 5 - - 15 5 V nA µA - , specified Parameter Symbol Values min. DC Characteristics per Transistor Collector-emitter breakdown voltage


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PDF BC847PN VPS05604 EHA07193 OT-363 EHA07177 OT363 250cal marking 1ps
2005 - marking 1ps

Abstract: BC847PN E6433
Text: BC847PN NPN /PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN /PNP 4 5 6 , mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(ON) VBEsat VCEsat hFE ICBO ICBO V(BR)EBO V(BR)CES V(BR)CBO V(BR)CEO typ. max. Unit 45 50 50 5 - - 15 5 V nA µA - , specified Parameter Symbol Values min. DC Characteristics per Transistor Collector-emitter breakdown voltage


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PDF BC847PN VPS05604 EHA07193 OT-363 EHA07177 OT363 250cal marking 1ps BC847PN E6433
2004 - BC846UPN

Abstract: No abstract text available
Text: BC846UPN NPN /PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN /PNP 5 6 , =25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics per Transistor , 750 820 VBEsat 700 900 VCEsat 90 200 300 650 hFE 200 250 290 450 ICBO 5 ICBO 15 V(BR)EBO 5 V(BR)CES 80 V(BR)CBO 80 V(BR)CEO 65 typ. max. Unit V nA µA - mV mV 1) Pulse test: t < 300s; D


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PDF BC846UPN VPW09197 EHA07177 BC846UPN
2006 - 6CS transistor

Abstract: transistor 6cs
Text: BC817./ BC818. NPN Silicon AF Transistor · For general AF applications · High collector , current ICBO = (TA) VCBO = 25 V EHP00222 IC = (V BEsat), hFE = 10 10 3 BC 817/818 10 5 BC 817 , endangered. 11 2006-01-19 BC817.B500x NPN Silicon AF Transistor · For general AF applications · , cutoff current ICBO = (TA) VCBO = 25 V 10 5 BC 817/818 EHP00221 C mA 150 °C 25 °C -50 °C CBO , ), hFE = 10 10 3 mA BCW 67/68 EHP00401 Collector cutoff current ICBO = (TA) VCBO = 25 V 10 5 nA


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PDF BC817. BC818. BC807. BC808. BC817-16 BC817-25 BC817-25W BC817-40 BC817-40W BC818-16W 6CS transistor transistor 6cs
transistor 1094

Abstract: NPN SMALL SIGNAL TRANSISTOR 182LA TRANSISTOR BC 413 BC182LA bc182* transistor ic 4450
Text: DISCRETE POWER & SIGNAL TECHNOLOGIES BC182LA SILICON NPN SMALL SIGNAL TRANSISTOR 1 BVCEO , BC182LA SILICON NPN SMALL SIGNAL TRANSISTOR ELECTRICAL CHARACTERISTICS Con't (25 Degrees C Ambient , C LOGOXYY 0.175 - 0.185 (4.450 - 4.700) BC 182LA SEATING POWER DISSIPATION (NOTES 2 , = 2.0 mA BVEBO Emitter to Base Voltage 5 V IE = 10 uA ICBO Collector Cutoff Current 15 nA VCB = 50 V IEBO Emitter Cutoff Current 15 nA VEB = 4.0 V


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PDF BC182LA 182LA Pr10/1094 transistor 1094 NPN SMALL SIGNAL TRANSISTOR 182LA TRANSISTOR BC 413 BC182LA bc182* transistor ic 4450
Not Available

Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package E BC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE 45 , Device India Limited Data Sheet Page 1 of 5 NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B , VCBO IC=100µA, IE=0 Collector Base Voltage VEBO IE=100µA, IC=0 Emitter Base Voltage ICBO VCB


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PDF BC317/A/B C-120 Rev220103E
2003 - BC317 transistor

Abstract: transistor BC317 BC317 BC317A BC317B bc 357 transistor pin
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package E BC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE 45 , Data Sheet Page 1 of 5 NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic , =100µA, IE=0 Collector Base Voltage VEBO IE=100µA, IC=0 Emitter Base Voltage ICBO VCB=20V, IE = 0


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PDF BC317/A/B C-120 Rev220103E BC317 transistor transistor BC317 BC317 BC317A BC317B bc 357 transistor pin
BC317

Abstract: transistor BC317 BC317B BC317 transistor BC317A BC317B equivalent bc 357 transistor
Text: Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package E BC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage , nA nA V V V V V 90 40 110 110 200 450 220 450 BC317_A_B_Rev220103E Continental Device India Limited Data Sheet Page 1 of 5 NPN SILICON PLANAR EPITAXIAL TRANSISTOR , ICBO VCB=20V, IE = 0 Collector Cut off Current IEBO VEB=4V, IC = 0 Emitter Cut off Current VBE


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PDF QSC/L-000019 BC317/A/B C-120 Rev220103E BC317 transistor BC317 BC317B BC317 transistor BC317A BC317B equivalent bc 357 transistor
pin configuration PNP transistor BC327

Abstract: BC327 BC337 noise figure BC338/BC328 tr bc 337 BC337A BC337 pnp transistor BC327 NPN transistor configuration BC327 BC328 BC337
Text: Current ICBO VCB =20V, IE =0 <100 nA VCB =20V , IE =0 <5.0 µA µA Collector , Certified Manufacturer BC 337 BC327 BC337A BC327A BC338 BC328 SILICON PLANAR EPITAXIAL TRANSISTORS NPN PNP TO-92 Plastic Package C BE Transistors For Use in Driver And Output Stages of , Page 1 of 4 BC 337 BC327 BC337A BC327A BC338 BC328 SILICON PLANAR EPITAXIAL TRANSISTORS NPN C PNP TO-92 Plastic Package BE ELECTRICAL CHARACTERISTICS (Ta=25º C unless


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PDF QSC/L-000019 BC327 BC337A BC327A BC338 BC328 BC337 BC337A pin configuration PNP transistor BC327 BC327 BC337 noise figure BC338/BC328 tr bc 337 BC337 pnp transistor BC327 NPN transistor configuration BC327 BC328 BC337
pin configuration PNP transistor BC327

Abstract: BC337 pnp transistor BC327 BC337 noise figure BC 114 transistor BC327 noise figure NPN 337 BC338/BC328 BC327 NPN transistor configuration BC328 NPN TRANSISTOR BC 135
Text: IE=10uA, IC=0 >5.0 V Collector-Cut off Current ICBO VCB =20V, IE =0 <100 nA , Limited Data Sheet Page 2 of 4 BC 337 BC327 BC337A BC327A BC338 BC328 NPN PNP TO , 3 of 4 Notes BC 337 BC327 BC337A BC327A BC338 BC328 NPN PNP TO-92 Plastic Package , Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company BC 337 BC327 BC337A BC327A BC338 BC328 SILICON PLANAR EPITAXIAL TRANSISTORS NPN PNP TO-92 Plastic


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PDF ISO/TS16949 BC327 BC337A BC327A BC338 BC328 BC337 BC337A pin configuration PNP transistor BC327 BC337 pnp transistor BC327 BC337 noise figure BC 114 transistor BC327 noise figure NPN 337 BC338/BC328 BC327 NPN transistor configuration BC328 NPN TRANSISTOR BC 135
2009 - marking 6bs

Abstract: No abstract text available
Text: BC817U NPN Silicon AF Transistor Array · For AF stages and driver applications · High current gain , (VBEsat), hFE = 10 10 3 BC 817/818 EHP00222 Collector cutoff current ICBO = (TA) VCBO = 25 V 10 5 BC 817/818 EHP00221 C mA 150 °C 25 °C -50 °C CBO nA 10 4 10 5 2 10 3 10 1 5 , breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO V(BR)CBO V(BR)EBO ICBO 45 50 5 - - V , Collector-base cutoff current VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 °C µA 0.1 50 100 nA 160 100


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PDF BC817U EHA07178 marking 6bs
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