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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor bc 630 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor bc 146

Abstract: transistor bc 570 transistor bc 630
Text: FAX: (973) 376-8960 BC146 MINIATURE NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR GENERAL DESCRIPTION The BC 146 isaNPNsilicon planar epitaxial transistor in miniature plastic package , importance. The BC 146 is complementary to PNP BC 200. ALL DIMENSIONS IN mm ABSOLUTE MAXIMUM RATINGS , 1.6°C/mW ELECTRICAL CHARACTERISTICS AT T A =25°C' BC 148Y BC 146R PARAMETER Collector-Base , -2mA VCE-BV ic-o.2mA Rg-2Kn f-30Hz-15KHz VcE-BV lc-2mA 570 570 570 630 80 630 630


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PDF BC146 BC146G transistor bc 146 transistor bc 570 transistor bc 630
TRANSISTOR BC 141

Abstract: transistor c202 OPA623X1 transistor c206 131 Transistor Q124 C202 Q121 C206 745 transistor
Text: BC ; Biasing Circuit BC X2 2 3 4 7 111 121 131 141 DT ; Diamond Transistor DT X3 4 6 7 111 121 CB ; Current-Buffer CB * C202 2 0 2E-12 C206 6 0 2E-12 .ENDS OPA623X1 *Diamond Transistor DT * .SUBCKT , 7 37 6 4 NI 2.2 Q40 4 38 6 7 PI 2.2 * .ENDS CB *Biasing Circuit BC * .SUBCKT BC 4 7 131 141 * RQC 122 4 630 ; 745 * Q121 131 131 7 7 PI Q122 131 141 122 4 NI 10 Q123 141 131 7 7 PI Q124 141 141 4 4 NI * .ENDS BC .MODEL .MODEL .MODEL .MODEL NI NPN PI PNP PIM PNP (VAF


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PDF OPA623X1 TRANSISTOR BC 141 transistor c202 transistor c206 131 Transistor Q124 C202 Q121 C206 745 transistor
BCW General Purpose Transistor

Abstract: l9902
Text: BCW60A/B/C/D GENERAL PURPOSE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS (TA =25°C) C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector Dissipation Storage Tem perature Sym bol V cbO V cE O V , Gain BCW 60B BC W 60C BC W 60D BC W 60A BCW 60B BC W 60C BC W 60D BC W 60A BCW 60B BC W 60C BC W 60D C , V ce= 5V, lc=2m A 220 310 460 630 V ce= 1V, lc=50m A VcE(sat) VBE(sat) VBE(sat) C ob fT NF


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PDF BCW60A/B/C/D BCW General Purpose Transistor l9902
2007 - l6599

Abstract: TRANSISTOR BC 814 r46 arcotronics AN2393 L6599 application note AN1792 L6599 application note l6563 200w arcotronics 1uf 450V MKP transistor bc 567 transistor bc 564
Text: Components C27 100 nF 50 V 1206 SMD Cercap General Purpose BC Components C28 22 nF/ 630 V , voltage regulation. The optocoupler transistor modulates the current from Pin 4, so the frequency will , imposed by these zener diodes plus the VBE of Q10, the transistor Q9 starts conducting and the , C5 330 nF/ 630 V Polypropylene Capacitor High Ripple MKP R71 Arcotronics - Epcos C6 680 nF/ 630 V Polypropylene Capacitor High Ripple MKP R71 Arcotronics - Epcos C7 470 nF/ 630 V


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PDF AN2393 L6599-based L6563 l6599 TRANSISTOR BC 814 r46 arcotronics AN2393 L6599 application note AN1792 L6599 application note l6563 200w arcotronics 1uf 450V MKP transistor bc 567 transistor bc 564
1994 - Q62702-C2320

Abstract: C2320 BC 170 transistor transistor 6cs TRANSISTOR c2324 BC817W transistor bc icbo nA npn transistor marking A02 TRANSISTOR BC c2324 C2324
Text: BC 817W, BC 818W NPN Silicon AF Transistor l For general AF applications l High collector current l High current gain l Low collector-emitter saturation voltage l Complementary types: BC 807W, BC 808W (PNP) Type Marking BC 817-16W BC 817-25W BC 817-40W BC 818-16W BC 818-25W BC , Base current Total Power dissipation TS=130°C Junction temperature Storage temperature range BC 817W BC 818W Unit 45 25 V 50 30 V 5 500 1 V mA A 100 mA 250 mW


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PDF 17-16W 17-25W 17-40W 18-16W 18-25W 18-40W Q62702-C2320 Q62702-C2278 Q62702-C2321 Q62702-C2322 Q62702-C2320 C2320 BC 170 transistor transistor 6cs TRANSISTOR c2324 BC817W transistor bc icbo nA npn transistor marking A02 TRANSISTOR BC c2324 C2324
1998 - 2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET diode S6 78A transistors bf 517 TRANSISTOR BC 450 pnp BFG sot89 BC 327 SOT 23 BAS20 SOT23 bcp 846 DIODE TA 70/04
Text: mA V mA mA V BC 807 P 45 1000 330 200 100 25 100 - 630 * 100 1 0.70 500 50 SOT-23 BC 807W P 45 1000 250 200 100 25 100 - 630 * 100 1 0.70 500 50 SOT-323 BC 808 P 25 1000 330 200 100 25 100 - 630 * 100 1 0.70 500 50 SOT-23 BC 808W P 25 1000 250 200 100 25 100 - 630 * 100 1 0.70 500 50 SOT-323 BC 817 N 45 1000 330 170 100 25 100 - 630 * 100 1 0.70 500 50 SOT-23 BC


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PDF O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET diode S6 78A transistors bf 517 TRANSISTOR BC 450 pnp BFG sot89 BC 327 SOT 23 BAS20 SOT23 bcp 846 DIODE TA 70/04
2007 - AN1792 L6599 application note

Abstract: B15 diode smd l6599 400w T-RES-ER49-400W circuit diagram of smps 400w viper 12a arcotronics R46 275 SHORT CIRCUIT PROTECTION FOR L6562 l6599 L6599 application note
Text: PURPOSE BC COMPONENTS C28 47 nF/ 630 V POLYPROPYLENE CAPACITOR HIGH RIPPLE PHE450 RIFA-EVOX , ) to adjust the current in the optocoupler diode (U3). The optocoupler transistor modulates the , high gain of transistor Q12, while, during short circuit, the small value capacitor C23 can be quickly , ), and the external power transistor is switched off until the current falls approximately below 5 µA , zener diodes plus the VBE of Q10, the transistor Q9 starts conducting and the optocoupler U8 opens Q7


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PDF AN2509 L6599-based L6563 AN1792 L6599 application note B15 diode smd l6599 400w T-RES-ER49-400W circuit diagram of smps 400w viper 12a arcotronics R46 275 SHORT CIRCUIT PROTECTION FOR L6562 l6599 L6599 application note
2006 - 6CS transistor

Abstract: transistor 6cs
Text: BC817./ BC818. NPN Silicon AF Transistor · For general AF applications · High collector , .40 100 160 250 60 100 170 VCEsat VBEsat 160 250 350 - 250 400 630 0.7 1.2 V Collector-emitter , = (VCEsat), hFE = 10 10 3 BC 817/818 EHP00223 h FE-grp.40 10 3 C mA 150 °C 25 °C -50 °C , current ICBO = (TA) VCBO = 25 V EHP00222 IC = (V BEsat), hFE = 10 10 3 BC 817/818 10 5 BC 817 , fT MHz 5 BC 817/818 EHP00218 Collector-base capacitance Ccb = (V CB) Emitter-base capacitance Ceb


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PDF BC817. BC818. BC807. BC808. BC817-16 BC817-25 BC817-25W BC817-40 BC817-40W BC818-16W 6CS transistor transistor 6cs
bc337

Abstract: bc338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840
Text: MCC TO-92 Plastic-Encapsulate Transistors ^ BC337(BC338),-16,-25,-40 TRANSISTOR (NPN) FEATURES Pcm: 0.625W (Tamb=25°C) Icm: 0 .8 A ÍIIÍÍÉ>ji^fe>ba»a voltage Vcbo: BC 337 : 50V B C 338 : 30V storage junction temperature range Tj,Tstg: -55'C to + 150°C ELECTRICAL CHARACTERISTICS (Tam b=25°C u n le s s o th e rw is e s p e c ifie d ) BC337 Collector-base breakdown voltage BC338 BC337 , 00 160 250 630 250 400 630 u A DC current gain BC337-25/BC338-25 BC337-40/BC338-40 hFE(2) V


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PDF BC337 BC338) BC338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840
2007 - r46 arcotronics

Abstract: l6599 400w l6562 flyback 70W AN1792 L6599 application note MKP r71 Viper 12A smd 86H-5410 l6599 Arcotronics r75 EVAL6599-400W-S
Text: TL431 (U4) to adjust the current in the optocoupler diode (U3). The optocoupler transistor modulates , external power transistor is switched off until the current falls approximately below 5 µA. However, if , diode plus the VBE of Q10, the transistor Q9 starts conducting and the optocoupler U8 opens Q7, so that , 470 nF/ 630 V POLYPROPYLENE CAPACITOR HIGH RIPPLE MKP R71 ARCOTRONICS - EPCOS C6 470 nF/ 630 V POLYPROPYLENE CAPACITOR HIGH RIPPLE MKP R71 ARCOTRONICS - EPCOS C7 470 nF/ 630 V


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PDF AN2492 L6599-based L6563 r46 arcotronics l6599 400w l6562 flyback 70W AN1792 L6599 application note MKP r71 Viper 12A smd 86H-5410 l6599 Arcotronics r75 EVAL6599-400W-S
POWER TRANSISTOR BC 4060

Abstract: No abstract text available
Text: ,05 L0,014±0,002] 16,00±0,30 [0, 630 + 0,012] 4,25±0,10 L0,167±0,004] TARE EEED DIRECTIEN 7 , DUAL CHANNEL PHOTOCOURLER, TRANSISTOR OUTPUT WITHOUT EXTERNAL BASE CONNECTION. confidential information , , ILLINOIS 60067 PHONE: 1-847-359-2790 WEB: HTTP://WWW.LUMEX.COM DRAWN BY: TM/ BC CHECKED BY: APPROVED BY , P-Ri "R EIGHT PIN SURFACE MOUNT DUAL CHANNEL PHOTOCOUPLER, TRANSISTOR OUTPUT WITHOUT EXTERNAL BASE , DRAWN BY: TM/ BC CHECKED BY: APPROVED BY: DATE: 9-29-99 PAGE: 2 OF 2 SCALE: N/A


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1999 - BCW61A

Abstract: marking BA RT TRANSISTOR PNP BA RT SOT 89 BCW61B BCW61C BCW61D
Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=25°C) ° Characteristic Collector-Base Voltage Collector-Emitter Voltage , , IB2= -1mA R1=R2=50K, RL=990 -20 0.68 0.6 0.6 Unit V V nA 220 310 460 630 -0.55 , Fairchild Semiconductor Corporation BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR MARKING CODE TYPE BCW61A BCW61B BCW61C BCW61D MARK. BA BB BC BD TRADEMARKS The


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PDF BCW61A/B/C/D OT-23 KS5086 BCW61A marking BA RT TRANSISTOR PNP BA RT SOT 89 BCW61B BCW61C BCW61D
diode S6 78A

Abstract: mmic CEA SOT363 TRANSISTOR PNP BA RT SOT 89 transistor 6bw 32N45 BF1012S up 6103 s8 6bw sot-23 TRANSISTOR BC 545 6bw 12 transistor
Text: - RF-Double Transistor Arrays , . 22 Double Transistor Arrays , 450 24 RF-Dual Transistor Arrays Type N =NPN P = PNP Maximum Ratings VcEO lc V mA T BFS 460 T BFS , Transistors Type N = NPN P =PNP BC 807 BC 807W BC 808 BC 808W BC 817 BC 817W BC 818 BC 818W BC 846 BC 846W BC 847 BC 847W BC 848 BC848W BC 856 BC 856W BC 857 BC 857W BC 858 BC 858W BCP 51 BCP 52 BCP 53 BCP 54 BCP


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PDF O-92tl O-92d diode S6 78A mmic CEA SOT363 TRANSISTOR PNP BA RT SOT 89 transistor 6bw 32N45 BF1012S up 6103 s8 6bw sot-23 TRANSISTOR BC 545 6bw 12 transistor
TRANSISTOR BC 256

Abstract: TRANSISTOR BC 181
Text: ,472±0,004] 16,00±0,30 [0, 630 + 0,012] 4,25±0,10 [0,167±0,004] TARE EEED DIRECTIEN »UNLESS OTHERWISE , PHOTOOOUPUER, TRANSISTOR OUTPUT WITHOUT EXTERNAL BASE CONNECTION. confidential information the information , ROAD PALATINE, ILLINOIS 60067 PHONE: 1-847-359-2790 WEB: HTTP://WWW.LUMEX.COM DRAWN BY: TM/ BC CHECKED , , TRANSISTOR OUTPUT WITHOUT EXTERNAL BASE CONNECTION. confidential information the information contained in , , ILLINOIS 60067 PHONE: 1-847-359-2790 WEB: HTTP://WWW.LUMEX.COM DRAWN BY: TM/ BC CHECKED BY: APPROVED BY


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1996 - transistors BC 543

Abstract: 183W BCR191P sot-23 p1 TRANSISTOR BC 530 SOT23 BCV 27 diode S6 78A Diode BAW 62 mmic amplifier sot-89 p4 diode sot 143 s5
Text: BC 807 P 45 1000 330 200 100 25 100 - 630 * 100 1 0.70 500 50 SOT-23 w BC 807W P 45 1000 250 200 100 25 100 - 630 * 100 1 0.70 500 50 SOT-323 BC 808 P 25 1000 330 200 100 25 100 - 630 * 100 1 0.70 500 50 SOT-23 w BC 808W P 25 1000 250 200 100 25 100 - 630 * 100 1 0.70 500 50 SOT-323 BC 817 N 45 1000 330 170 100 25 100 - 630 * 100 1 0.70 500 50 SOT-23 w BC 817W N


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PDF OT-23 OT-363 OT-143 transistors BC 543 183W BCR191P sot-23 p1 TRANSISTOR BC 530 SOT23 BCV 27 diode S6 78A Diode BAW 62 mmic amplifier sot-89 p4 diode sot 143 s5
Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 2sd103 bup 3130 C3885A 2SA102 bfq59 34d 937 086
Text: EINLEITUNG Das Ihnen vorliegende Daten- und Vergleichsbuch . transistor 2“ beinhaltet m ehrals 19000 , €” INTRODUCTION This comparative data book . transistor 2“ contains more than 19000 different transistors and , than one transistor with different polarities in one case pnp PNP structure p-ch P channel type (FET , television appliction CTV Chopper chop Darlington transistor Dari Dual Gate (FET) dg double Paired types Driver stages dr Dual transistor (differential amplifier) dual Final stages end FET Field-effect


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ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 TIP 43c transistor AC153Y transistor ESM 2878 2sk116 bf199 ac128
Text: . transistor 1" contains more than 19000 different transistors and FET’s, all of which are listed , structure n-ch N channel type (FET) n-p More than one transistor with different polarities in one case pnp , amplifier CATV CB CB-radio Colour television appliction CTV Chopper chop Dari Darlington transistor Dual Gate (FET) dg double Paired types Driver stages dr Dual transistor (differential amplifier) dual end Final stages FET Field-effect transistor FET-depl. Field-effect transistor , depletion type Field-effect


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PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 TIP 43c transistor AC153Y transistor ESM 2878 2sk116 bf199 ac128
KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: 108 D 1 9 SC 237?, BC 107 B ^8 SC 237D, BC 107 B *-8 KT 3107 B *8 KT 630 B, SF 129 D 5 KT 630 B, W 5 , 2N 2894 9 BC 313-16, KFY 18 5 BC 211-16, KT 630 B, SF 129 D 5 SF 137 D 9 BC 211-16 5 BC 211-16 5 , 130 0,9 1 2 64 200 BC 211-16 100 60 200 KT 630 B,W, SP 129 D 145 0,8 0,5 1,2,6 BC 211-16 KT 630 B,W , 4_ 1 , 2 SF 129 D, KT 630 B 5 >90 50 BC 211-16,KT 630 B 5 >70 0,8 0,5 1,2 5 >4 mS; Up * 6 V ) 25 V , 15 15 12 10 SF 359, BF 259 SSY 20 B, KT 630 B SSY 20 B, KT 630 B KT 630 B, BC 211-1^ SSY 20 B .


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10L0

Abstract: 2950 transistor
Text: ,472±0,004] 16,00±0,30 [0, 630 + 0,012] 4,25±0,10 [0,167±0,004] TARE EEED DIRECTIEN »UNLESS OTHERWISE , PHOTOOOUPUER, TRANSISTOR OUTPUT WITHOUT EXTERNAL BASE CONNECTION. CONFIDENTIAL INFORMATION THE INFORMATION , ROAD PALATINE, ILLINOIS 60067 PHONE: 1-847-359-2790 WEB: HTTP://WWW.LUMEX.COM DRAWN BY: TM/ BC CHECKED


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2006 - egs SOT23

Abstract: BC817K-40 thermal resistance
Text: BC817./ BC818. NPN Silicon AF Transistor · For general AF applications · High collector , hFE-grps.3) 100 160 250 60 100 170 40 VCEsat VBEsat 160 250 350 - 250 400 630 0.7 1.2 V , Collector-emitter saturation voltage IC = (VCEsat), hFE = 10 10 3 BC 817/818 EHP00223 C mA 150 °C 25 °C -50 , ), hFE = 10 10 3 BC 817/818 EHP00222 Collector cutoff current ICBO = (TA) VCBO = 25 V 10 5 BC 817 , MHz 5 BC 817/818 EHP00218 Collector-base capacitance Ccb = (V CB) Emitter-base capacitance Ceb =


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PDF BC817. BC818. BC807. BC808. BC817-16 BC817K-16* BC817-25 BC817K-25* BC817-25W BC817K-25W* egs SOT23 BC817K-40 thermal resistance
2006 - bc817

Abstract: No abstract text available
Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector , V, h FE-grp.16 250 350 630 60 - - IC = 300 mA, V CE = 1 V, h FE-grp.25 IC = , Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 h FE-grp.40 10 3 10 3 ΙC BC 817/818 , ), hFE = 10 BC 817/818 10 3 ΙC EHP00222 10 5 mA Ι CBO 150 ˚C 25 ˚C -50 ˚C 10 2 BC 817/818 EHP00221 nA 10 4 5 max 10 3 10 1 5 typ 10 2 10 0 10


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PDF BC817. BC818. BC807. BC808. BC817-16 BC817-25 BC817-25W OT323 BC817-40 BC817-40W bc817
F1K marking

Abstract: No abstract text available
Text: SILICON TRANSISTOR BCW 61 C BC BCW 61 D BD FAIRCHILD S E M IC O N D U C T O R T M TRADEM ARKS , BCW61A/B/C/D GENERAL PURPOSE TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA =25°C) C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature · Refer to KS5086 fo r graphs Sym , 20 40 100 120 140 250 380 60 80 100 100 V ce= -5V, lc= -2m A 220 310 460 630 VCE= -5V, lc


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PDF BCW61A/B/C/D KS5086 BCW61 F1K marking
2009 - 6as sot23

Abstract: marking 6bs 1B marking transistor marking 6Bs BC817K-40W
Text: BC817K./BC818K. NPN Silicon AF Transistor · For general AF applications · High collector , 160 250 350 - 250 400 630 0.7 1.2 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 , Collector-emitter saturation voltage IC = (VCEsat ), hFE = 10 10 3 BC 817/818 EHP00223 C mA 150 °C 25 °C -50 , ), hFE = 10 10 3 BC 817/818 EHP00222 Collector cutoff current ICBO = (TA) VCBO = 25 V 10 5 BC 817 , MHz 5 BC 817/818 EHP00218 Collector-base capacitance Ccb = (VCB) Emitter-base capacitance Ceb =


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PDF BC817K. /BC818K. BC817K-16 BC817K-16W BC817K-25 BC817K-25W BC817K-40 BC817K-40W BC818K-16W BC818K-40 6as sot23 marking 6bs 1B marking transistor marking 6Bs
BC transistor series catalog

Abstract: BCW67 BD PNP BCW29R BCW60B BCW60A BCW33 BCW32 BCW31 BCW30
Text: ffSPRQGUE BIPOLAR TRANSISTORS • BIPOLAR TRANSISTORS THE MARK OF RELIABILITY SERIES BCW MICROMINIATURE TRANSISTORS • Series BCW consists of standard Pro-Electron transistor type numbers. • These , 5 0.35 0.60 0.85 10 0.25 4.5 125 10 — g(2) BCW60D AD NPN 32(i) 32 5 20 32 20 4 380 630 2 5 0.35 , -0.60 -0.85 -10 -0.25 6 — — 800(3) 6(2) BCW61C BC PNP _32 630 2


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PDF T0-236AA T0-236AB BCW29 BCW29R Pinning16' O-236AA/AB BCW70 BCW71 BCW72 BC transistor series catalog BCW67 BD PNP BCW60B BCW60A BCW33 BCW32 BCW31 BCW30
2001 - marking B22 sot-23

Abstract: bc 2001 transistor BCW61A BCW61B BCW61C BCW61D KST5086
Text: BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -32 Units V VCEO , , IB= -0.25mA V 220 310 460 630 V nA -0.55 -0.25 V V 0.68 0.6 1.05 0.85 , BCW61B BCW61C BCW61D Mark. BA BB BC BD Marking BA ©2001 Fairchild


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PDF BCW61A/B/C/D OT-23 KST5086 marking B22 sot-23 bc 2001 transistor BCW61A BCW61B BCW61C BCW61D
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