The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16

transistor bc 564 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor Bc 542

Abstract: transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 2574 transistor SOT-23 marking aeg transistor BF 52 din 82 RAA 0.8
Text: . Example: Order-No. of Type BC 238 G DU 06 !Z Code for TO-92 Transistors Orientation of transistor on tape ^ Additional marking for specialsa* l) 06 ® View on flat side of transistor , view on gummed tape 05 » View on round side of transistor , view on gummed tape a) Additional marking "0": Taping , ^2DQRb OGD'iMBS ' BF 883 S Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages , transistor not necessary, because box can be opened on top or botton. Example for order No.: BC237CDUZ


OCR Scan
PDF T-33-0S- JEDECTO126 transistor Bc 542 transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 2574 transistor SOT-23 marking aeg transistor BF 52 din 82 RAA 0.8
c 2579 power transistor

Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 Transistors marking WZ PM564
Text: 000^43^ 0 • BF 885 S AL GG Silicon NPN Epitaxial Planar RF Transistor Applications; Video B-class , number. Example: i BC 238 C DU 06 ¡Z Order-No. of Type_' Code for TO-92 Transistors_| Orientation of transistor on tape ^_ Additional marking for specialsai_ l) 06 ® View on flat side of transistor , view on gummed tape 05 » View on round side of transistor , view on gummed tape a) Additional , . Marking for orientation of transistor not necessary, because box can be opened on top or botton. Example


OCR Scan
PDF JEDECTO126 15A3DIN c 2579 power transistor TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 Transistors marking WZ PM564
2007 - l6599

Abstract: TRANSISTOR BC 814 r46 arcotronics AN2393 L6599 application note AN1792 L6599 application note l6563 200w arcotronics 1uf 450V MKP transistor bc 567 transistor bc 564
Text: voltage regulation. The optocoupler transistor modulates the current from Pin 4, so the frequency will , imposed by these zener diodes plus the VBE of Q10, the transistor Q9 starts conducting and the , 74.2 D15 57.6 D16 55.3 T2 18/35 Temp (°C) 56.4 AN2393 Thermal tests , (Cu) 41.2 C8 37.1 R2 65.8 Q5 38.3 Q6 43.7 D8A 56.4 D8B 55.6 , Safety Ceramic Disk Capacitor Murata C12 100 nF 50 V 1206 SMD Cercap General Purpose BC


Original
PDF AN2393 L6599-based L6563 l6599 TRANSISTOR BC 814 r46 arcotronics AN2393 L6599 application note AN1792 L6599 application note l6563 200w arcotronics 1uf 450V MKP transistor bc 567 transistor bc 564
1995 - TRANSISTOR BC 157

Abstract: transistor bc 564 NMOS-2 transistor bc 541 HARRIS PACKAGE LOGIC FCT transistors BC 543 bc 574 transistor TRANSISTOR REPLACEMENT GUIDE AN6525 NMOS-2 transistor
Text: 823A (Note 1) 244 533 564 651 841A (Note 1) 245 540 573 652 843A (Note 1 , . 240 533 652 842A (Note 1) 240 374 564 651 241 573 821A (Note 1) 843A , 564 564 654 245 573 573 841 841A 273 273 574 574 842 373 , well as Harris FCT does. Other bus-interface families such as AS, F (FAST), BCT, and BC have higher , BC BiCMOS FCT/A FCTXXX AT BCT BC LOGIC FAMILY HARRIS FCTBiCMOS FIGURE 3


Original
PDF CD74ACTXXXE/M TRANSISTOR BC 157 transistor bc 564 NMOS-2 transistor bc 541 HARRIS PACKAGE LOGIC FCT transistors BC 543 bc 574 transistor TRANSISTOR REPLACEMENT GUIDE AN6525 NMOS-2 transistor
transistor BC 308

Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Text: MPN SILICON TRANSISTOR , EPITAXIAL PLANAR rRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL * BC 307 BC , voltage Tension basa-émetteur Iq =-2 mA VCE =-5V VBE -0,55 0,62 -0,7 \ *The transistor BC 307 is grouped in two classes of OC gain VI - A La transistor BC 307 est subdivisé en deux classes de gain statique VI - A The transistor BC 308 is grouped in three classes of OC gain VI - A - B Le transistor BC 308 ast subdivisé en trois classes da gain statique V! - A - B The transistor BC 309 is grouped in


OCR Scan
PDF BC307 CB-76 307ast 308ast transistor BC 308 transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
transistor BC 236

Abstract: bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
Text: 000^30^ AL GG BC 635 · BC 637 · BC 639 r - a i -33 Silicon NPN Epitaxial Planar Transistors , available Dimensions In mm · Complementary to BC 636, BC 638, BC 640 2.8 «QB i 1 IS .2 i 1 -2 &2 , 125 °C Collector-base breakdown voltage B C 635 BC 637 BC 639 T1.2/508.0888 E B C 637 60 1 1.5 1 150 5 5 .+ 150 BC 639 80 V A A ·a W °C °C 45 ^ C M P .o , T\ ^thJA 156 125 55 Min , 000^310 7 BC 635 · BC 637 · BC 639 Min. Collector-emitter breakdown voltage lc = 20 mA BC 635 BC 637 B


OCR Scan
PDF BC635 15A3DIN transistor BC 236 bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
transistor BC 236

Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
Text: IAL66 electronic BC 636 · BC 638 · BC 640 Creata« léchnofogtes Silicon PNP Epitaxial Planar , pairs available Dimensions in mm · Complementary to BC 635, BC 637, BC 639 tccanfng 19 O M l^eftnom , Collector-base breakdown voltage -/c = 1 mA BC636 BC 638 BC 640 RthJA r .g ` ^CEO B C 636 45 BC 638 60 1 1.5 1 150 BC 640 80 V A A W °C «C s « ^c ^ CM ~ , P .o , - 5 5 . .+ 150 , TELEFUNKEN E L E C T R O N IC 17E P ê'iEQ cn b o c m a 'is d IAL6G BC 636 * BC 638 · BC


OCR Scan
PDF IAL66 15A3DIN transistor BC 236 transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
transistor A 564

Abstract: S-AV8 2-13B1A 564 transistor S-AU4
Text: 7.1. Precautions for handling RF Pow er Transistor (1) Mounting ceramic seal type transistor For mounting such a transistor as shown in the figure, on a printed circuit board or heat sink, it is ncessary , mounting, press the transistor head light ly with a finger, hold it with a nut in the case of stud type or , to give stress forcedly to the transistor . In order to improve even a little the thermal contact state between the transistor and the heat sink, apply silicon grease with high ther mal conductivity to


OCR Scan
PDF TcS90 transistor A 564 S-AV8 2-13B1A 564 transistor S-AU4
catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente equivalent of transistor bc212 bc 214 transistor A2222 SESCOSEM transistor BFw-11 terminals Brochage BCW91 equivalente transistor BC 141
Text: 100_295 *BCT07A TO-18 300 45 125-260 2 0,95 100/5 300 §_297 * BC 107 B TO-18 300 45 240-500 2 0,95 100/5 , page * BC 108 A TO-18 300 20 125-260 2 0,95 100/5 300 S 297 * BC 108 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 * BC 108 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 109 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 BC 109 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 140 cl.6 TO-39 750 40 40-100 100 1 1000/100 50 307 BC 140 cl.10 TO-39 750 40 60-160 100 1 1000/100 50 307 BC 140


OCR Scan
PDF
1998 - BC 547 PIN DIAGRAM

Abstract: IDG 600 TRANSISTOR C 557 B STMicroelectronics Krypton ST952 pin diagram of BC 547 "caller ID" "type 2" hybrid gyrator impedance modem transistor BC 557 TQFP32
Text: activates the off-hook or the CLID external transistor switch. 6 NC Ring LIM2 19 NC , Digital AIN . . . . . . . . . . . If CLID external transistor switch is enabled, a , . These signals control the off-hook and CLID external transistor switches and is sent to the internal , signal in opposite phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits


Original
PDF ST952 56Kbps TQFP32 ST952TQFP ST952 56Kbps ST75951 TQFP32 BC 547 PIN DIAGRAM IDG 600 TRANSISTOR C 557 B STMicroelectronics Krypton pin diagram of BC 547 "caller ID" "type 2" hybrid gyrator impedance modem transistor BC 557
1998 - IDG 600

Abstract: STMicroelectronics Krypton ST952 "caller ID" "type 2" hybrid BC 547 PIN DIAGRAM ST75951 ST952TQF7 TQFP32 VTAC 4
Text: : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring , external transistor switches and are sent to the internal transmit demodulator and receive modulator , hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits the line current in CLID mode at 1mA max


Original
PDF ST952 TQFP32 ST952TQF7 ST952 ST75951 IDG 600 STMicroelectronics Krypton "caller ID" "type 2" hybrid BC 547 PIN DIAGRAM ST952TQF7 TQFP32 VTAC 4
1998 - IDG 600

Abstract: STMicroelectronics Krypton clid applications transistor 547 TQFP32 ST952TQF7 ST75951 ST952 Krypton isolation D6510
Text: : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring , off-hook and CLID external transistor switches and are sent to the internal transmit demodulator and , phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits the line current in


Original
PDF ST952 TQFP32 ST952TQF7 ST952 ST75951 IDG 600 STMicroelectronics Krypton clid applications transistor 547 TQFP32 ST952TQF7 Krypton isolation D6510
transistor BC 157

Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
Text: AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN , complementary transistors to BC 140 and BC 1 4 1and are available upon request as matched pairs. Type BC160') BC 160-6 BC 160-10 BC 160-16 BC 160 paired BC 160/BC140 paired BC 161 BC 161-6 BC 161-10 BC 161-16 BC 161 , Dimensions In mm BC 160 40 40 5 1 0.1 175 -55 to +175 3.7 BC 161 60 60 5 1 0.1 175 -55 to +175 3.7 V V , characteristics (Tam b = 25 °C) The transistors BC 160 and BC 161 are grouped at -Iq = 100 mA and -Vce = 1V


OCR Scan
PDF BC160 BC160' 160/BC140 BC161/BC141 8C161 transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
transistor NEC D 587

Abstract: 3181 R33 transistor c 3181
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed , transistor has been applied small mini mold package. PACKAGE DIMENSIONS in millimeters 2.1 ± 0.1 , .160 .168 .177 .186 S12 ANG 74.8 64.1 59.9 56.7 55.9 55.6 55.7 56.3 56.1 56.4 56.0 56.4 56.2 56.0 , .162 .177 .183 S12 ANG 79.9 65.1 55.0 58.5 56.4 54.9 59.5 58.4 58.4 61.2 61.8 61.4 62.3 63.9 63.6 66.4


OCR Scan
PDF 2SC4227 2SC4227 SC-70 2SC4227-T1 transistor NEC D 587 3181 R33 transistor c 3181
1997 - NEC 2403

Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Text: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier. 2.1 ± 0.1 It is , = 3 V, IC = 7 mA 0.3 +0.1 ­0 FEATURES 2.0 ± 0.2 +0.1 0.3 ­0 0.65 0.65 transistor has , 59.9 56.7 55.9 55.6 55.7 56.3 56.1 56.4 56.0 56.4 56.2 56.0 55.4 55.0 54.4 53.9 53.3


Original
PDF 2SC4227 2SC4227 SC-70 2SC4227-T1 NEC 2403 3181 R33 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
APC UPS CIRCUIT DIAGRAM rs 1500

Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 800 CIRCUIT diagram UPS APC rs 1000 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Text: IC O N PLANAR NPN AUDIO DRIVER BC 115 The BC115 is a silicon planar epitaxial NPN transistor , IC O N PLANAR PNP GENERAL PURPOSE TRANSISTOR BC 116A The BC116A is a silicon planar epitaxial , mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier , transistor in a. Jedec TO-72 metal case. It is designed for use in AG C prestages up to 260 MHz. ABSOLUTE , F 139 is a germanium mesa PNP transistor in a Je d e c TO-72 metal case. It is particularly designed


OCR Scan
PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 800 CIRCUIT diagram UPS APC rs 1000 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
TRANSISTOR BC 157

Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES transistor bc 102 BC161 transistor f15n
Text: 2SC » ■û23SbOS ooomoa tjusieô^ . PNP Silicon Transistors SIEMENS AKTIEN6ESELLSCHAF Bc 160 BC 161 BC160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN 41873). The , transistors to BC 140 and BC 141 and are available upon request as matched pairs. Type Ordering code BC 1601' Q62702-C228 BC 160-6 Q62702-C228-V6 BC 160-10 Q62702-C228-V10 BC 160-16 Q62702-C228-V16 BC 160 paired Q62702-C228-P BC 160/BC140 paired Q62702-C228-S2 BC1611> Q62702-C252 BC 161-6 Q62702-C230 BC 161-10


OCR Scan
PDF 23SbOS BC160 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P 160/BC140 Q62702-C228-S2 BC1611> TRANSISTOR BC 157 BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES transistor bc 102 BC161 transistor f15n
2000 - transisTOR C124

Abstract: Operational Transconductance Amplifier pspice c124 transistor cdt660 OPA660 TR BC 548 transistor c202 TI 121 Transistor opa660 pspice transistor directory
Text: consists of the subcircuits DT, DB, and BC . BC , the biasing circuit, supplies current to the transistor , Transistor DT X3 1 4 7 13 14 CBC660; Biasing Circuit BC * C201 1 0 2pF C202 2 0 2pF C203 3 , standards in scope and details. The macromodel for the Diamond Transistor OPA660 gives an example of the , characteristics, while remaining simple enough to ensure fast simulations. THE DIAMOND TRANSISTOR OPA660 Analog , . This operational transconductance amplifier contains the Diamond Transistor (DT) and Diamond Buffer


Original
PDF
BC 109 Transistor

Abstract: transistor bc 107 TRANSISTOR BC 109 BC 108 BC 107 transistor CIL 108 transistor bc 325 BC 109C transistor bc 107b transistor BC 108 transistor
Text: -18 PNP DRIVER/PRE-AMPLIFIER TRANSISTOR - BC 177 45 50 5 75/260* 2 5 200 300 , DRIVER/PRE-AMPLIFIER TRANSISTORS BC 107 45 50 6 110/450 2 5 ' 200 300 0.02 0.25 300 2.5 TO-18 BC 107 A 45 50 6 110/220 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 107B 45 50 6 200/450 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 108 20 30 5 110/800 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 108A 20 30 5 110/220 2 5 200 300 U02 0.25 300 2.5 TO-18 BC 108B 20 30 5 200/450 2 5


OCR Scan
PDF O-237 BC 109 Transistor transistor bc 107 TRANSISTOR BC 109 BC 108 BC 107 transistor CIL 108 transistor bc 325 BC 109C transistor bc 107b transistor BC 108 transistor
1996 - Operational Transconductance Amplifier pspice

Abstract: transisTOR C124 c124 transistor cdt660 transistor c206 OPA660 transistor c202 transistor directory OPA622 DEM-OPA660-3GC
Text: , and BC . BC , the biasing circuit, supplies current to the transistor stages in the DT and DB via , Transistor DT X3 1 4 7 13 14 CBC660; Biasing Circuit BC * C201 1 0 2pF C202 2 0 2pF C203 3 , standards in scope and details. The macromodel for the Diamond Transistor OPA660 gives an example of the , characteristics, while remaining simple enough to ensure fast simulations. THE DIAMOND TRANSISTOR OPA660 Analog , . This operational transconductance amplifier contains the Diamond Transistor (DT) and Diamond Buffer


Original
PDF CG22DF2) Operational Transconductance Amplifier pspice transisTOR C124 c124 transistor cdt660 transistor c206 OPA660 transistor c202 transistor directory OPA622 DEM-OPA660-3GC
transistor bc 146

Abstract: transistor bc 570 transistor bc 630
Text: FAX: (973) 376-8960 BC146 MINIATURE NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR GENERAL DESCRIPTION The BC 146 isaNPNsilicon planar epitaxial transistor in miniature plastic package , importance. The BC 146 is complementary to PNP BC 200. ALL DIMENSIONS IN mm ABSOLUTE MAXIMUM RATINGS , 1.6°C/mW ELECTRICAL CHARACTERISTICS AT T A =25°C' BC 148Y BC 146R PARAMETER Collector-Base , Impedance Reverse Voltage Transfer Ratio Small Signal Current Gain Output Admittance BC 146R BC


Original
PDF BC146 BC146G transistor bc 146 transistor bc 570 transistor bc 630
2002 - transistor C546

Abstract: transistor C547 npn smd diode C543 transistor c693 smd diode c548 transistor C372 c528 transistor c545 transistor transistor c367 smd diode c524
Text: -002 (9.00).xls TOTAL QTY 7 7 3 9 Manufacturer Name BC Components BC Components BC Components BC , -00 5% PA 10R Page 1 of 5 1 7 3 1 2 9 BC Components BC Components BC Components BC Components BC Components BC Components DCT 0603 -00 5% PA 27R DCT 0603 -00 5% PA 47R0 DCT 0603 - 00 5 , 0 1 1 2 3 2 19 BC Components BC Components BC Components BC Components BC Components BC Components DCT 0603 - 00 5% PA 1k20 DCT 0603 -00 5% PA 2k2 DCT 0603 -00 5% PA 3k30 DCT 0603


Original
PDF TAS5100EVM SLEU010A transistor C546 transistor C547 npn smd diode C543 transistor c693 smd diode c548 transistor C372 c528 transistor c545 transistor transistor c367 smd diode c524
lm 7803

Abstract: "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor AVALANCHE TRANSISTOR 60GHz transistor ED-36 two bjt bc 107 30GHZ
Text: transistor may operate in quasi-saturation. Due to the Kirk effect the internal b-c junction voltage is then , is shown. The model will be part of the bipolar compact transistor model Mextram 504, but also can be used separately. 1 Introduction In a bipolar transistor near the breakdown voltage avalanche currents , known that the collector current modulates the maximum electric field in the b-c depletion layer , critical electric field. We use for an NPN transistor an = 7.05 • 107 m_1 and bn = 1.23 • 108V/m and


OCR Scan
PDF 30GHZ, 60GHZ ED-42 ED-39 lm 7803 "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor AVALANCHE TRANSISTOR 60GHz transistor ED-36 two bjt bc 107 30GHZ
2006 - wabash relay

Abstract: 1820-3145 1826-0346 RK73H2BT1621F GRM3195C1H102JD01D 5053HD619K0F e1420 Caddell-Burns Manufacturing 1826-0180 tkf 28
Text: .125W TF TC=0+-100 5053HD10K00F CMF-551002FT-1 NK4H.125W1%+/100PPM1002 VISHAY BC COMPONENTS , =0+-100 5053HD5K620F CMF-555621FT-1 NK4H.125W1%+/100PPM5621 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R12 , -551001FT-1 NK4H.125W1%+/100PPM1001 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R13, 25, 26, 41, 45, 50 , =0+-100 5053HD464R0F CMF-554640FT-1 NK4H.125W1%+/100PPM464R0 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R16 , -551100FT-1 NK4H.125W1%+/100PPM110R0 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R17, 19, 20, 28, 30, 31


Original
PDF E1420B E1420B E1420-68006 E1420-68006 wabash relay 1820-3145 1826-0346 RK73H2BT1621F GRM3195C1H102JD01D 5053HD619K0F e1420 Caddell-Burns Manufacturing 1826-0180 tkf 28
2011 - 2731GN

Abstract: No abstract text available
Text: DESCRIPTION The 2731GN-110M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable , across the 2700 to 3100 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for S-Band Radar applications. It utilizes gold metallization and , ) 2731GN-110M Rev 1 2731GN ­ 110M 110 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz Transistor Impedance , j9.52 Zl 5.28 ­ j3.20 5.37 ­ j2.74 5.49 ­ j2.28 5.64 ­ j1.84 5.82 ­ j1.42 Note: Z in is looking


Original
PDF 2731GN-110M 2731GN 55-QP 2731GN
Supplyframe Tracking Pixel