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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor bc 537 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TRANSISTOR BC 748

Abstract:
Text: circuit Users' circuit Non-voltage contact or NPN open-collector transistor or Safety relay unit , open-collector transistor or U-shaped side mounting intermediate supporting bracket (Note 1) Used for , DC15 % Ripple P-P 10 % or less NPN open-collector transistor PNP open-collector transistor · Maximum sink current: 200 mA · Maximum source current: 200 mA · , received is stable) NPN open-collector transistor PNP


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2007 - l6599

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Text: voltage regulation. The optocoupler transistor modulates the current from Pin 4, so the frequency will , imposed by these zener diodes plus the VBE of Q10, the transistor Q9 starts conducting and the , load Ambient temperature: 25° C Item D2 44.9 Q2 53.7 D3 50.3 L1 47.0 L3 , Safety Ceramic Disk Capacitor Murata C12 100 nF 50 V 1206 SMD Cercap General Purpose BC , 1206 SMD Cercap General Purpose BC Components C15 100 pF 100 V 0805 SMD Cercap General


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PDF AN2393 L6599-based L6563 l6599 TRANSISTOR BC 814 r46 arcotronics AN2393 L6599 application note AN1792 L6599 application note l6563 200w transistor bc 567 arcotronics 1uf 450V MKP transistor bc 564
1994 - Power Semiconductor Applications Philips Semiconductors

Abstract:
Text: Transistor All solid-state switches have significant advantages over relays but there are different types , safely conducted by a bipolar transistor is independent of its duration. Whereas the safe operating , parallel, around it. If the device is a bipolar transistor then an extra component will be needed


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E50R

Abstract:
Text: , function - VEGATOR 536 Ex - VEGATOR 537 Ex Galvanical separation Max. values Transistor voltage loss , . 31 4.2 VEGATOR 534 Ex signal conditioning instrument . 33 4.3 VEGATOR 536 Ex and 537 , oscillators are available for different electrical outputs (non-contact switch, relay or transistor ). For , switch, relay, transistor or two-wire output). For product temperatures exceeding 100°C a temperature , µA max. 3 A AC, 1 A DC max. 500 VA, 54 W T - Transistor output (VIB E40 T, E50 T), VEGAVIB 41


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PDF D-77761 E50R vegator h128 transistor 80X110 1.4571 resistant EX-95 E30R AC adapter E40, vibrating sensor alarm 1520S
transistor BC 308

Abstract:
Text: MPN SILICON TRANSISTOR , EPITAXIAL PLANAR rRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL * BC 307 BC , voltage Tension basa-émetteur Iq =-2 mA VCE =-5V VBE -0,55 0,62 -0,7 \ *The transistor BC 307 is grouped in two classes of OC gain VI - A La transistor BC 307 est subdivisé en deux classes de gain statique VI - A The transistor BC 308 is grouped in three classes of OC gain VI - A - B Le transistor BC 308 ast subdivisé en trois classes da gain statique V! - A - B The transistor BC 309 is grouped in


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PDF BC307 CB-76 307ast 308ast transistor BC 308 transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
vegaswing 83

Abstract:
Text: Transistor output Number, function - VEGATOR 536 Ex - VEGATOR 537 Ex Galvanic separation Max. value , oscillators - relay output - non-contact switch - transistor output - two-wire output · all standard , of the vibrating level switch - non-contact switch (C) - relay output (R) - transistor output (T). , 537 Ex - VEGATOR 636 Ex - VEGATOR 825 Ex. If one of the stated failures is determined or in case , · · Relay output (R) · · · · · · · · Transistor output (T) ·


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transistor BC 236

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Text: 000^30^ AL GG BC 635 · BC 637 · BC 639 r - a i -33 Silicon NPN Epitaxial Planar Transistors , available Dimensions In mm · Complementary to BC 636, BC 638, BC 640 2.8 «QB i 1 IS .2 i 1 -2 &2 , 125 °C Collector-base breakdown voltage B C 635 BC 637 BC 639 T1.2/508.0888 E B C 637 60 1 1.5 1 150 5 5 .+ 150 BC 639 80 V A A ·a W °C °C 45 ^ C M P .o , T\ ^thJA 156 125 55 Min , 000^310 7 BC 635 · BC 637 · BC 639 Min. Collector-emitter breakdown voltage lc = 20 mA BC 635 BC 637 B


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PDF BC635 15A3DIN transistor BC 236 bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
transistor BC 236

Abstract:
Text: IAL66 electronic BC 636 · BC 638 · BC 640 Creata« léchnofogtes Silicon PNP Epitaxial Planar , pairs available Dimensions in mm · Complementary to BC 635, BC 637, BC 639 tccanfng 19 O M l^eftnom , Collector-base breakdown voltage -/c = 1 mA BC636 BC 638 BC 640 RthJA r .g ` ^CEO B C 636 45 BC 638 60 1 1.5 1 150 BC 640 80 V A A W °C «C s « ^c ^ CM ~ , P .o , - 5 5 . .+ 150 , TELEFUNKEN E L E C T R O N IC 17E P ê'iEQ cn b o c m a 'is d IAL6G BC 636 * BC 638 · BC


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PDF IAL66 15A3DIN transistor BC 236 transistor bf 425 TRANSISTOR 636 transistor bc 237c bc 640 bc638 transistor D-636 transistor transistor bc 238 b transistors BC 23
1998 - BC 547 PIN DIAGRAM

Abstract:
Text: activates the off-hook or the CLID external transistor switch. 6 NC Ring LIM2 19 NC , Digital AIN . . . . . . . . . . . If CLID external transistor switch is enabled, a , . These signals control the off-hook and CLID external transistor switches and is sent to the internal , signal in opposite phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits


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PDF ST952 56Kbps TQFP32 ST952TQFP ST952 56Kbps ST75951 TQFP32 BC 547 PIN DIAGRAM IDG 600 pin diagram of BC 547 "caller ID" "type 2" hybrid TRANSISTOR C 557 B STMicroelectronics Krypton gyrator impedance modem internal diagram of external modem Krypton isolation
1998 - IDG 600

Abstract:
Text: : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring , external transistor switches and are sent to the internal transmit demodulator and receive modulator , hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits the line current in CLID mode at 1mA max


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PDF ST952 TQFP32 ST952TQF7 ST952 ST75951 IDG 600 STMicroelectronics Krypton "caller ID" "type 2" hybrid BC 547 PIN DIAGRAM ST952TQF7 TQFP32 VTAC 4
1998 - IDG 600

Abstract:
Text: : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring , off-hook and CLID external transistor switches and are sent to the internal transmit demodulator and , phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits the line current in


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PDF ST952 TQFP32 ST952TQF7 ST952 ST75951 IDG 600 STMicroelectronics Krypton transistor BC 557 ST952TQF7 Krypton isolation Krypton daa D6510 clid
1994 - Power Semiconductor Applications Philips Semiconductors

Abstract:
Text: prolonged operation of a power transistor above its junction temperature rating is liable to result in , is not exceeded. Fig. 1 Heat transport in a transistor with power dissipation constant with , , however, somewhat more complicated. A transistor , be it a power MOSFET or a bipolar, can operate in its , ). If the transistor is subjected to a mounting-base temperature Tmb 1, its junction temperature , dissipation in a transistor as a function of the mounting-base temperature Pulse power operation When a


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equivalent for transistor tt 2222

Abstract:
Text: MIL-S-19500/ 537 (USAF) tt October 1980 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR , . FIGURE i. Physical dimension', of transistor types 2N6674 and 2N6675. 13 MIL-S-19500/ 537 (03AF) Symbol , dimensions of transistor types 2N6689 and 2N6690 (TO-61). V MIl-S-19500/ 537 (USAF) 1/ gil«*U vcc * 20 M , on-state value (see figure 3), 2 V MIl-S-19500/ 537 (USAF) 3.3 Design. construction, and physical , origin may be omitted from the body of the transistor . 4. QUALITY ASSURANCE PROVISIONS. 4.1 Sampling


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PDF MIL-S-19500/537 2N6674, 2N6675, 2N6689, 2N6690 MIL-S-19500. ZH6674, N6675 T0-61) equivalent for transistor tt 2222 wn 537 a transistor wn 537 transistor 2N6669 D105 7827 Transistor 2N6689 2N668 2N6674
1994 - current fed push pull topology

Abstract:
Text: is required, since the only energy delivered to the lamp during the transistor 's OFF time is what was stored in LPRI during the preceding ON time. The transistor remains OFF and will not turn ON , switching losses that would be experienced by the transistor in higher power mains voltage versions , connected to the transistor 's base. The values of R, C, transformer primary inductance LPRI and the transistor parameters set the oscillation frequency and the mark / space ratio of the waveform (which


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PDF 50/60Hz current fed push pull topology "CHAPTER 1 Introduction to Power Semiconductors" Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" "Power Semiconductor Applications" Philips 40w ELECTRONIC choke BALLAST DIAGRAM 230v 40w fluorescent lamp inverter circuit circuit diagram electronic ballast for 40W tube l circuit diagram electronic choke for tube light CHAPTER 1 Introduction to Power Semiconductors
transistor BC 157

Abstract:
Text: AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN , complementary transistors to BC 140 and BC 1 4 1and are available upon request as matched pairs. Type BC160') BC 160-6 BC 160-10 BC 160-16 BC 160 paired BC 160/BC140 paired BC 161 BC 161-6 BC 161-10 BC 161-16 BC 161 , Dimensions In mm BC 160 40 40 5 1 0.1 175 -55 to +175 3.7 BC 161 60 60 5 1 0.1 175 -55 to +175 3.7 V V , characteristics (Tam b = 25 °C) The transistors BC 160 and BC 161 are grouped at -Iq = 100 mA and -Vce = 1V


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PDF BC160 BC160' 160/BC140 BC161/BC141 8C161 transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR BC 650 c TRANSISTOR "BC 157" TRANSISTOR Siemens a35 BC161-10
catalogue des transistors bipolaires de puissance

Abstract:
Text: 100_295 *BCT07A TO-18 300 45 125-260 2 0,95 100/5 300 §_297 * BC 107 B TO-18 300 45 240-500 2 0,95 100/5 , page * BC 108 A TO-18 300 20 125-260 2 0,95 100/5 300 S 297 * BC 108 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 * BC 108 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 109 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 BC 109 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 140 cl.6 TO-39 750 40 40-100 100 1 1000/100 50 307 BC 140 cl.10 TO-39 750 40 60-160 100 1 1000/100 50 307 BC 140


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APC UPS CIRCUIT DIAGRAM rs 1500

Abstract:
Text: IC O N PLANAR NPN AUDIO DRIVER BC 115 The BC115 is a silicon planar epitaxial NPN transistor , IC O N PLANAR PNP GENERAL PURPOSE TRANSISTOR BC 116A The BC116A is a silicon planar epitaxial , mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier , transistor in a. Jedec TO-72 metal case. It is designed for use in AG C prestages up to 260 MHz. ABSOLUTE , F 139 is a germanium mesa PNP transistor in a Je d e c TO-72 metal case. It is particularly designed


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PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
TRANSISTOR BC 157

Abstract:
Text: 2SC » ■û23SbOS ooomoa tjusieô^ . PNP Silicon Transistors SIEMENS AKTIEN6ESELLSCHAF Bc 160 BC 161 BC160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN 41873). The , transistors to BC 140 and BC 141 and are available upon request as matched pairs. Type Ordering code BC 1601' Q62702-C228 BC 160-6 Q62702-C228-V6 BC 160-10 Q62702-C228-V10 BC 160-16 Q62702-C228-V16 BC 160 paired Q62702-C228-P BC 160/BC140 paired Q62702-C228-S2 BC1611> Q62702-C252 BC 161-6 Q62702-C230 BC 161-10


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PDF 23SbOS BC160 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P 160/BC140 Q62702-C228-S2 BC1611> TRANSISTOR BC 157 BC181 transistor bc160 TRANSISTOR "BC 157" transistor BC 55 transistor 2sc 1586 transistor BC SERIES transistor bc 102 f15n BC161 transistor
2000 - transisTOR C124

Abstract:
Text: consists of the subcircuits DT, DB, and BC . BC , the biasing circuit, supplies current to the transistor , Transistor DT X3 1 4 7 13 14 CBC660; Biasing Circuit BC * C201 1 0 2pF C202 2 0 2pF C203 3 , standards in scope and details. The macromodel for the Diamond Transistor OPA660 gives an example of the , characteristics, while remaining simple enough to ensure fast simulations. THE DIAMOND TRANSISTOR OPA660 Analog , . This operational transconductance amplifier contains the Diamond Transistor (DT) and Diamond Buffer


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1994 - "CHAPTER 1 Introduction to Power Semiconductors"

Abstract:
Text: the drive current. This device is called a High Voltage Transistor or HVT. The second one is to have , known as the J-FET (junction FET) or SIT (Static Induction Transistor ). 7 Introduction BASE , J-FET (SIT) BIPOLAR TRANSISTOR - MOS Fig.4 The three basic three layer devices The third , transistor . B E B N+ I In practice however, devices bear little resemblance to the , - N The High Voltage Transistor (HVT) N+ The High Voltage Transistor uses a positive


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BC 109 Transistor

Abstract:
Text: -18 PNP DRIVER/PRE-AMPLIFIER TRANSISTOR - BC 177 45 50 5 75/260* 2 5 200 300 , DRIVER/PRE-AMPLIFIER TRANSISTORS BC 107 45 50 6 110/450 2 5 ' 200 300 0.02 0.25 300 2.5 TO-18 BC 107 A 45 50 6 110/220 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 107B 45 50 6 200/450 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 108 20 30 5 110/800 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 108A 20 30 5 110/220 2 5 200 300 U02 0.25 300 2.5 TO-18 BC 108B 20 30 5 200/450 2 5


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PDF O-237 BC 109 Transistor BC 108 TRANSISTOR BC 109 transistor bc 107 BC 107 transistor CIL 108 transistor bc 325 BC 109C transistor bc 107b transistor BC 107 npn transistor pin configuration
1996 - Operational Transconductance Amplifier pspice

Abstract:
Text: , and BC . BC , the biasing circuit, supplies current to the transistor stages in the DT and DB via , Transistor DT X3 1 4 7 13 14 CBC660; Biasing Circuit BC * C201 1 0 2pF C202 2 0 2pF C203 3 , standards in scope and details. The macromodel for the Diamond Transistor OPA660 gives an example of the , characteristics, while remaining simple enough to ensure fast simulations. THE DIAMOND TRANSISTOR OPA660 Analog , . This operational transconductance amplifier contains the Diamond Transistor (DT) and Diamond Buffer


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PDF CG22DF2) Operational Transconductance Amplifier pspice transisTOR C124 c124 transistor OPA660 transistor c206 transistor c202 transistor directory cdt660 MPC100 C208
transistor bc 146

Abstract:
Text: FAX: (973) 376-8960 BC146 MINIATURE NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR GENERAL DESCRIPTION The BC 146 isaNPNsilicon planar epitaxial transistor in miniature plastic package , importance. The BC 146 is complementary to PNP BC 200. ALL DIMENSIONS IN mm ABSOLUTE MAXIMUM RATINGS , 1.6°C/mW ELECTRICAL CHARACTERISTICS AT T A =25°C' BC 148Y BC 146R PARAMETER Collector-Base , Impedance Reverse Voltage Transfer Ratio Small Signal Current Gain Output Admittance BC 146R BC


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PDF BC146 BC146G transistor bc 146 transistor bc 570 transistor bc 630
2002 - transistor C546

Abstract:
Text: -002 (9.00).xls TOTAL QTY 7 7 3 9 Manufacturer Name BC Components BC Components BC Components BC , -00 5% PA 10R Page 1 of 5 1 7 3 1 2 9 BC Components BC Components BC Components BC Components BC Components BC Components DCT 0603 -00 5% PA 27R DCT 0603 -00 5% PA 47R0 DCT 0603 - 00 5 , 0 1 1 2 3 2 19 BC Components BC Components BC Components BC Components BC Components BC Components DCT 0603 - 00 5% PA 1k20 DCT 0603 -00 5% PA 2k2 DCT 0603 -00 5% PA 3k30 DCT 0603


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PDF TAS5100EVM SLEU010A transistor C546 transistor C547 npn smd diode C543 transistor c693 smd diode c548 transistor C372 c528 transistor c545 transistor smd diode c524 transistor c367
lm 7803

Abstract:
Text: transistor may operate in quasi-saturation. Due to the Kirk effect the internal b-c junction voltage is then , is shown. The model will be part of the bipolar compact transistor model Mextram 504, but also can be used separately. 1 Introduction In a bipolar transistor near the breakdown voltage avalanche currents , known that the collector current modulates the maximum electric field in the b-c depletion layer , critical electric field. We use for an NPN transistor an = 7.05 • 107 m_1 and bn = 1.23 • 108V/m and


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PDF 30GHZ, 60GHZ ED-42 ED-39 lm 7803 "BJT Transistors" TRANSISTOR as BC 158 bipolar BC transistor BJT Transistors 60GHz transistor AVALANCHE TRANSISTOR two bjt bc 107 ED-36
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