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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor b 595 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - b 595 transistor

Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 , Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as , standard transistor is available as a chip for hybrid oscillator circuits or in hermetic ceramic packages , /A-COM proprietary high temperature refractory barrier/gold metalization process. The MA4T243 transistor , +85 2 2111 8087 s Europe: Tel. +44 (1344) 869 595 , Fax+44 (1344) 300 020 www.macom.com AMP and


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PDF MA4T243 MA4T24300 b 595 transistor transistor 5 Amp 700 volt transistor b 595 MA4T24335
1996 - IC 3263

Abstract: medium power high voltage transistor SILICON npn POWER TRANSISTOR c 869 transistor c 3263
Text: Silicon Bipolar Transistor Case Style MA4T56800 V2.00 Chip - MA4T56800 Case Style 1170 A DIM. A B , Preliminary Specifications Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor , MA4T568 is a medium power, high fT silicon NPN transistor designed to work at 8 - 12 volts VCC and with , chip transistor is designed for use in medium power amplifiers through 3 GHz and oscillators operating , provide maximum device reliability and ease of chip and wire assembly. This transistor series is also


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PDF MA4T56800 MA4T568 MA4T56800, MA4T56800 MA4T568000 IC 3263 medium power high voltage transistor SILICON npn POWER TRANSISTOR c 869 transistor c 3263
b 595 transistor

Abstract: No abstract text available
Text: Bipolar Transistor Features · High Output Power, 23 dBm PldB @ 1 GHz · High Gain-Bandwidth Product, 4 GHz fT · High Power Gain, I S21E 12 = 12 dB @ 1 GHz G TU (m ax.) = 11 d B @ 2 GHz MA4T56800 V2.00 Description The MA4T568 is a m edium power, high fT silicon NPN transistor designed to work at 8 - 12 volts , ceramic package. This chip transistor is designed for use in m edium pow er amplifiers through 3 GHz and , 8769 Europe: Tel. +44(1344)869 595 Fax +44 (1344) 300 020 Medium Power, 2 Volt, High fT NPN


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PDF MA4T56800 MA4T568 MA4T56800, MA4T56800 MA4T568000 b 595 transistor
1996 - TRANSISTOR K 1507

Abstract: No abstract text available
Text: : Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 3 Volt, Low Noise High fT Silicon Transistor , : Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 3 Volt, Low Noise High fT Silicon Transistor , Preliminary Specifications 3 Volt, Low Noise High fT Silicon Transistor Features q q q q q , MA4T6310 transistor series has high fT and low noise when operated with 0.3 to 2.0 milliamperes current , frequency range of 0.5 to 3 GHz. The MA4T6310 transistor is useful for wireless communication systems from


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PDF MA4T6310 OT-23 MA4T631039 OT-143 MA4T631039 TRANSISTOR K 1507
Not Available

Abstract: No abstract text available
Text: : Tel. +44(1344)869 595 Fax +44(1344)300 020 3 Volt, Low Noise High fT Silicon Transistor , High fT Silicon Transistor Features · · · · · 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 , at small current is important. The MA4T6310 transistor series has high fT and low noise when operated , 3-5 volt battery operated VCO in the frequency range o f 0.5 to 3 GHz. The MA4T6310 transistor is , +81 (03) 3226-1451 1 Europe: Tel. +44(1344)869 595 Fax +44(1344)300 020 3 Volt, Low Noise


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PDF MA4T6310 OT-23
transistor b 595

Abstract: No abstract text available
Text: Volt, High fT NPN Silicon Bipolar Transistor Features · High O utput Power, 23 dBm PldB @ 1 GHz · , 2 GHz Description The MA4T568 is a medium power, high fT silicon NPN transistor designed to w , , for use in hybrid applications as an amplifier or moderate pow er oscillator. It can also b e supplied in a common collector ceramic package. This chip transistor is designed for use in medium pow er , 3 3263 8769 1 Europe: Tel. +44(1344)869 595 Fax +44(1344)300 020 Medium Power, 2 Volt


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PDF MA4T56800 MA4T568 MA4T56800, operati8761 MA4T56800 MA4T568000 transistor b 595
QE R 643

Abstract: No abstract text available
Text: · Features MA4T243 Series V3.00 Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip Available in Hermetic Surface Mount Packages , below 4 dB. This industry standard transistor is available as a chip for hybrid oscillator circuits or , /gold metalization process. The MA4T243 transistor is em itter ballasted using ion im planted , (1344) 869 595 Fax +44(1344)300 020 Silicon Bipolar High fT Low Noise Medium Power 12 Volt


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PDF MA4T243 MA4T24300 MA4T24300 MA4T24335 QE R 643
1998 - mount chip transistor 332

Abstract: SOT-23 TRANSISTOR 548 MA4T64500
Text: Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series MA4T645 Series , 2111 8087 s Europe: Tel. +44 (1344) 869 595 , Fax+44 (1344) 300 020 www.macom.com AMP and , Bipolar High fT Low Noise Microwave Transistor MA4T645 Series Absolute Maximum Ratings MA4T645 , +85 2 2111 8087 s Europe: Tel. +44 (1344) 869 595 , Fax+44 (1344) 300 020 www.macom.com AMP and , Bipolar High fT Low Noise Microwave Transistor MA4T645 Series Electrical Specifications @ +25°C


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PDF MA4T645 mount chip transistor 332 SOT-23 TRANSISTOR 548 MA4T64500
TRANSISTOR K 1507

Abstract: No abstract text available
Text: . + 4 4 (1 3 4 4 )8 6 9 595 + 4 4 (1 3 4 4 )3 0 0 020 3 Volt, Low Noise High fT Silicon Transistor , 9 595 + 4 4 (1 3 4 4 )3 0 0 020 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series , fT Silicon Transistor · · · · · Features 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 , important. The MA4T6310 transistor series has high and low noise when operated with 0.3 to 2.0 milliamperes , the frequency range of 0.5 to 3 GHz. The MA4T6310 transistor is useful for wireless communi cation


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PDF MA4T6310 OT-23 TRANSISTOR K 1507
Not Available

Abstract: No abstract text available
Text: · · · Features Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor , below 4 dB. This industry standard transistor is available as a chip for hybrid oscillator circuits or , metalization process. The MA4T243 transistor is emitter ballasted using ion implanted polysilicon resistors to , , Fax (800) 6 18 -8 88 3 E urop e: T e l. +4 4 (1344) 8 69 595 , F a x+4 4 (1344) 300 020 A s ia /P a c , change without notice. AMR Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor


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PDF MA4T243 MA4T24300
1N4Z45

Abstract: T33 transistor
Text: Atím m w an A M P com pany Wireless Power Transistor , 33W 1805-1880 MHz Features · NPN Silicon M icrow ave P o w er Transistor · C o m m o n Km itter C lass AB O peratio n · In tern al In pu t and O utpu t Im p ed an ce M atching · D iffu sed Km itter B allastin g · G o ld M etallization System , Temperature Thermal Resistance Symbol VC E O VC E S VE B O 'c PD ^"sTG L Rating 25 65 3.0 4.7 91 -55 t o +150 , +81 (03) 3226-1451 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 North America


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PDF PH1819-33 1N4Z45 T33 transistor
nd 16 TRANSISTOR SOT-23

Abstract: TRANSISTOR b 772 p sot-23 rks MA4T64500 RKS SOT23 mount chip transistor 332 SOT-143 717 transistor TE 901 equivalent MA4T645 MA4T64539
Text: ) 8 69 595 , F a x+4 4 (1344) 300 020 A s ia /P a c ific : T e l.+ 8 5 2 2111 8 08 8, F a x + 8 5 2 , High fT Low Noise Microwave Transistor MA4T645 Series Absolute Maximum Ratings MA4T645 Series , 3 E urop e: T e l. +4 4 (1344) 8 69 595 , F a x+4 4 (1344) 300 020 A s ia /P a c ific : T e l.+ 8 5 , . AMR Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series Electrical , VE B = 1 volt lc = 0 |aA Ie b o - - 1 |aA Forward Current Gain VC E = 8 volts


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PDF MA4T645 OT-23 OT-143 MA41344) nd 16 TRANSISTOR SOT-23 TRANSISTOR b 772 p sot-23 rks MA4T64500 RKS SOT23 mount chip transistor 332 SOT-143 717 transistor TE 901 equivalent MA4T64539
Not Available

Abstract: No abstract text available
Text: M fa oe m m an A M P com pany RF MOSFET Power Transistor , 150W, 28V 100 - 500 MHz UF28150J V2.00 Features · N -Channel E n han cem en t M ode D evice · DM OS Structure · I,ow er C ap acitan ces for B , 1 KM IMS C l«M 0 M9 C.ft ua c r U6 LM M s 1» H m Utt J Ul w IM7 K *9> 1 B 4 S L N N MO «I N U I «98 .m 488 MS .7 0 0 .7 7 1 J W jn U S JO jm M B m IN m ja 4» 490 itt 4M ill 4M ¿71 4J7 , +81 (03) 3226-1451 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 North America: RF


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PDF UF28150J
Not Available

Abstract: No abstract text available
Text: Noise High fT Silicon Transistor Features · 1 5 dB N o ise F ig u ie a t 0 5 m A · 13 dB G a i l a t 1 , -23 Description T h e M A 4T6310 aeries o f Jow cu rren t, high silicon NPN b p o i r tran sistors p ro v id e s low n o ise fig u ie a t a b ia s o f 3 v o l s and an a l l co H ecto r e u r e n t . T h e se in ex p en siv e sur face m o u n t NPN tran sistors a ie w e l l suited i b r u sa g e in p o rtab ie b a , o ise w h e n o p erated w ith 0 3 to 2 .0 m iUiam p e ie s cu rren t, and 3 v o i b i a s . T h e


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PDF MA4T6310 OT-23 4T6310
8206F

Abstract: transistor ge 703 BA8205 BA820 1SS131 B 773 transistor ML8205 BA6565A
Text: volta ge B A 8 206 P ow er dissipation B A 8206F O pe ra ting tem pe rature S tora ge tem pe rature Topr , Circuit V SUS Fig. 4 'si 's u s k f Hl v c c = v su s R1 = 773 k il, C1 = 0.1 ^ F R2 = 595 k ii, C 2 = 0.0022 nF R2 = 595 k ii, C2 = 0.0022 ^ F I0 h = 10 m A, pin 7 = G ND Fig. 5 f H2 , O L T A G E : V cc (V ) Figure 1 Industrial ICs Figure 2 Source transistor RDHVn 77 , L T A G E : V cc (V ) Figure 3 Sink transistor Test circuits Switch settings for individual


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PDF BA8206 BA8206F BA8206F BA8205, BA6565A ML8205 BA8206 8206F transistor ge 703 BA8205 BA820 1SS131 B 773 transistor
pin diagram of bf 494 transistor

Abstract: siemens products transistor
Text: 490 AOs Q62702-F1721 1= B 2=E 3=C Package 4=C 5= E SCT- 595 Maximum Ratings , SIEMENS SIEGET®25 BFP 490 NPN Silicon RF Transistor Preliminary data • For high power , - Line Siemens Grounded Emitter Transistor 25 GHz f j - Line ESD: Electrostatic discharge , /c = 300 mA, VCE = 3 V, f = 0.5 GHz Collector-base capacitance Q; b - 13 “ 15 3.7 , , cP CD Vq B = 2 V, f = 1 MHz 1 MHz Emitter-base capacitance ^eb 1/eb = 0.5V , f = 1 MHz


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PDF Q62702-F1721 SCT-595 200mA pin diagram of bf 494 transistor siemens products transistor
t636

Abstract: 557 sot143 T636 A S 223 858 015 636
Text: VCOs operating at 5 volts or less. Because this transistor family was specifically designed to operate , reel. All of M/A-COM's silicon bipolar transistor families use silicon dioxide and silicon nitride , 4 4 )8 6 9 595 + 4 4 (1 3 4 4 )3 0 0 020 Low Operating Voltage, High fT Bipolar Microwave , 13 typ 7.0 min 13 typ 7.0 min 13 typ 7.0 min S pecifications S u b je ct to C hange W ithout , Fax +81 3 3263 8769 Europe: Tel. Fax M/A-COM, Inc. + 4 4 (1 3 4 4 )8 6 9 595 + 4 4 (1 3 4 4 )3 0


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PDF MA4T6365 MA4T6365 OT-143 MA4T636539 t636 557 sot143 T636 A S 223 858 015 636
1996 - MA4T636533

Abstract: transistor sot-23 2613 MA4T6365
Text: volts or less. Because this transistor family was specifically designed to operate from low bias voltage , /A-COM's silicon bipolar transistor families use silicon dioxide and silicon nitride passivation to , 595 Fax +44 (1344) 300 020 Low Operating Voltage, High fT Bipolar Microwave Transistors Maximum , 8761 Fax +81 3 3263 8769 s Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Low Operating , +81 3 3263 8769 s Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Low Operating Voltage


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PDF MA4T6365 MA4T6365 OT-143 MA4T636539 MA4T636533 transistor sot-23 2613
MA4T636500

Abstract: MA4T6365
Text: VCOs operating at 5 volts or less. Because this transistor family w as specifically designed to operate from low b ias voltage, it has su p erior ph ase noise in com parison to similar current bipolar , tape and reel. All o f M/A-COM's silicon bipolar transistor families use silicon dioxide and silicon , ) 618-8883 Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 1 Europe: Tel. +44 (1344) 869 595 Fax , /Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 M/A-COM, Inc. Europe: Tel. +44(1344)869 595 Fax +44


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PDF MA4T6365 MA4T6365 OT-143 MA4T636539 MA4T636500
2000 - A940

Abstract: Q67006-A9410 SCT-595 Q67006-A9395 AEB02662 AEP02661 Q67006-A9409 SCT595 TLE4295G
Text: Package Outlines SCT- 595 (Plastic Dual Small Outline) 2.9 ±0.2 B (2.2) 1.2 +0.1 -0.05 1.1 , Overtemperature protection Reverse polarity proof Very small SMD-Package SCT- 595 Type SCT 595 Ordering Code Package w TLE 4295G V30 Q67006-A9410 SCT- 595 (SMD) w TLE 4295G V33 Q67006-A9409 SCT- 595 (SMD) w TLE 4295G V50 Q67006-A9395 SCT- 595 (SMD) w New type Functional , package SCT- 595 . It is designed to supply e.g. microprocessor systems under the severe conditions of


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PDF SCT-595 4295G Q67006-A9410 Q67006-A9409 Q67006-A9395 A940 Q67006-A9410 SCT-595 Q67006-A9395 AEB02662 AEP02661 Q67006-A9409 SCT595 TLE4295G
BT 156 transistor

Abstract: TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 RCA-40637A i53b 5659065 rca transistor
Text: Epitaxial Planar Transistor For Frequency-Multiplier Service in Mobile, Marine, and Sonobuoy VHF Transmitters Features: ■High transistor dissipation rating (Pj) = 2 W max. ■Low output capacitance (C0 , planar transistor intended for frequency multiplier service to 175 MHz. The 40637A is particularly , R-TO- B ASE VO LTAG E . . vEBO 3.5 V CONTINUOUS COLLECTOR CURRENT . . "C 0.2 A TRANSISTOR DISSIPATION: PT At case temperature up


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PDF 0637A RCA-40637A 0637A 13-MHz 92CS-20223 BT 156 transistor TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 i53b 5659065 rca transistor
2002 - MD59-0062

Abstract: FQFP-N-20
Text: Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595 , Fax+44 (1344 , Europe: Tel. +44 (1344) 869 595 , Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets , transistor in series with the self-bias resistor, you can dynamically switch the current draw in the driver to provide high and low power operating modes. In high power mode, the bipolar transistor is on and , switching off the bipolar transistor , the output stage is biased through the higher resistance R2 thus


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PDF MD59-0062 MO-220A AM59-0062 AM59-0062TR FQFP-N-20
1996 - pin diagram of bf 494 transistor

Abstract: TA 8825 AN SOT-595 TA 8825 09326 BF 949 transistor PIN CONFIGURATION IC ne 555 RF POWER marking 556 SCT-595 TRANSISTOR BO 346
Text: Configuration BFP 490 AOs 1= B Q62702-F1721 2=E 3=C Package 4=C 5=E SCT- 595 , B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the , SIEGET® 25 BFP 490 NPN Silicon RF Transistor Preliminary data 4 · For high power , ® 25 - Line 1 VPW05980 Siemens Grounded Emitter Transistor 25 GHz fT - Line ESD , B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I


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PDF VPW05980 Q62702-F1721 SCT-595 Sep-09-1998 pin diagram of bf 494 transistor TA 8825 AN SOT-595 TA 8825 09326 BF 949 transistor PIN CONFIGURATION IC ne 555 RF POWER marking 556 SCT-595 TRANSISTOR BO 346
TD62592AP

Abstract: No abstract text available
Text: T O SH IB A TD62591 ~594AP, 595 ~598AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT , comprised of eight NPN Transistor Arrays. Applications include relay, hammer, lamp and display (LED) drivers , change w itho ut notice. 1997 12-24 1/8 - T O SH IB A TD62591 ~594AP, 595 ~598AP/AF , I 1997 12-24 2/8 - T O SH IB A TD62591 ~594AP, 595 ~598AP/AF RECOMMENDED OPERATING , , TD62595AP, TD62595AF 1997 12-24 3/8 - TO SH IB A TD62591 ~594AP, 595 ~598AP/AF TEST CIRCUIT 1


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PDF TD62591 594AP 598AP/AF TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP, TD62592AP
1999 - ISS270

Abstract: 1S22 DU2812OV I522 Transistor Equivalent list
Text: ) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor , DU2812OV 12OW, 28V v2 , ) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor , RF MOSFET Power Transistor , 12OW, 28V 2 - 175 MHz DU2812OV Features l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High , +81 (03) 3226-1451 = Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 M/A-COM


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PDF DU2812OV ISS270 1S22 DU2812OV I522 Transistor Equivalent list
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