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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor ac 127 Datasheets Context Search

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PC123 optocoupler

Abstract: PC123 optocoupler example TLP612 pc123 opto optocoupler PC123 transistor ac 127 sharp PC123 optocoupler sharp opto pc123 opto coupler M611 opto TLP181
Text: PS2705A-1 AC input, transistor coupler, high isolation 4-pin SOP 2.54 mm PS2805A-1 AC input, transistor coupler, high isolation 4-pin SSOP 1.27 mm Loop detector PS2521/25 DC/ AC input , isolation voltage (min. 2.5 kV) transistor coupler 4-pin SSOP 1.27 mm PS2811-1 High isolation voltage (min. 2.5 kV) transistor coupler 4-pin SSOP 1.27 mm PS2911-1 High isolation voltage (min. 2.5 kV) transistor coupler 4-pin Mini Flat 1.27 mm Benefits and advantages · · · ·


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PDF EPMC-PU-0009-1 PC123 optocoupler PC123 optocoupler example TLP612 pc123 opto optocoupler PC123 transistor ac 127 sharp PC123 optocoupler sharp opto pc123 opto coupler M611 opto TLP181
2000 - Not Available

Abstract: No abstract text available
Text: ; typ. 200 mΩ @ 25 °C per switch Output full short circuit protected Overtemperature protection , diodes Wide temperature range; − 40 °C < Tj < 150 °C Type Q67000-A9283 P-TO220-7-11 TLE , integrated freewheeling diodes. A monitoring circuit for each output transistor detects whether the particular transitor is active and in this case prevents the corresponding source transistor (sink transistor ) from conducting in sink operation (source operation). Therefore no crossover currents can occur


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PDF Q67000-A9283 P-TO220-7-11 5205-2GP Q67006-A9237 GPT09114 P-TO220-7-12
2000 - Not Available

Abstract: No abstract text available
Text: Outlines P-TO263-7-1 Option E3180 (Plastic Transistor Single Outline Package) 4.4 10 ±0.2 1.27  , ; typ. 200 mΩ @ 25 °C per switch Output full short circuit protected Overtemperature protection , Wide temperature range; − 40 °C < Tj < 150 °C Type Q67000-A9290 P-TO220-7-11 TLE 5206-2GP , integrated freewheeling diodes. A monitoring circuit for each output transistor detects whether the particular transitor is active and in this case prevents the corresponding source transistor (sink


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PDF Q67000-A9290 P-TO220-7-11 5206-2GP Q67006-A9239 P-DSO-20-10 520ionâ GPT09114 P-TO220-7-12
TCA160

Abstract: BY164 Mullard C296 TAA310A TBA480 TAA700 TBA550 TAA435 TAA300 PCC88
Text: •c Silicon p-n-p planar epitaxial transistor in plastic encapsulation. Suitable for use in high , ~ MHz •c dag C/W Silicon n-p-n planar epitaxial transistor in plastic encapsulation , MHz •c deg C/W Silicon p-n-p planar epitaxial transistor in plastic encapsulation , V mA •c Silicon n-p-n high voltage power transistor in metal envelope, intended for use in , % M Jf •i ■a 0 if 2 f A F125 Germanium p-n-p alloy-diffused transistor . For


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PDF AC187 BC157 BC158 BC159 BC186 BC187 BD201 BD202 BD203 BD204 TCA160 BY164 Mullard C296 TAA310A TBA480 TAA700 TBA550 TAA435 TAA300 PCC88
P521 OPTO

Abstract: p181 opto P521 opto coupler Opto Coupler p181 opto P181 p421 opto opto coupler P521 opto coupler P421 opto p521 cosmo 2010 4N35
Text: SOP4 Lead pitch = 1.27 mm AC Input SEMKO-approved TST part recm'ed TLP284(4) 1 2 16 15 14 , -4 1 2 3 SOP16 4-channel version of the TLP284 Lead pitch = 1.27 mm AC Input , part recm'ed SOP4 Lead pitch = 1.27 mm AC input SEMKO-approved TST part recm'ed TLP180(4) 1 , 8 SOP16 4-channel version of the TLP280 Lead pitch = 1.27 mm AC input SEMKO-approved GB , also offered with a wide selection of output ( transistor , thyristor, triac, IC output and photorelay


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PDF TLP521-1 BCE0034E P521 OPTO p181 opto P521 opto coupler Opto Coupler p181 opto P181 p421 opto opto coupler P521 opto coupler P421 opto p521 cosmo 2010 4N35
BT 156 transistor

Abstract: TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 RCA-40637A i53b 5659065 rca transistor
Text: Epitaxial Planar Transistor For Frequency-Multiplier Service in Mobile, Marine, and Sonobuoy VHF Transmitters Features: ■High transistor dissipation rating (Pj) = 2 W max. ■Low output capacitance (C0 , planar transistor intended for frequency multiplier service to 175 MHz. The 40637A is particularly , CURRENT . . "C 0.2 A TRANSISTOR DISSIPATION: PT At case temperature up , Soldering): °C At distances > 1/16 in. (1.58 mm) from seating plane for 10 s max. 265 295 8-73


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PDF 0637A RCA-40637A 0637A 13-MHz 92CS-20223 BT 156 transistor TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 i53b 5659065 rca transistor
2009 - PS8551L4

Abstract: PS2581 PS9317 PS9451 PS9817A-1 NEC PS2581 PS2581A ps9122 PS9302 ps2805c
Text: : Transistor output type Collector emitter voltage Orange: AC input 18 Transistor output / AC input , (Option), BSI ·· High VCEO (350 V) ·· Insulation thickness: 0.4 mm 17 Transistor output / AC , ±5 mA 80 IF = ±1 mA 40 VCEO in V TRANSISTOR OUTPUT - AC INPUT Absolute Maximum Ratings , IC output optocoupler Transistor optocoupler May 2009 Introduction Based on all in-house , . Transistor output optocoupler ff Single transistor output ff Darlington transistor output Based on a


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PDF EPMC-PU-0038-4 PS8551L4 PS2581 PS9317 PS9451 PS9817A-1 NEC PS2581 PS2581A ps9122 PS9302 ps2805c
p421f

Abstract: TLP350 equivalent NEC 10F triac A 3150 igbt driver TLP759 "cross reference" P181 Photocoupler pc817 equivalent TLP250 MOSFET DRIVER application note p421 Photocoupler TLP582 COMPATIBLE
Text: ) Transistor output 1 Mbit/s (TLP531, TLP631) AC input (TLP630) Low IF (TLP331 , Mini-flat package General-purpose use (TLP181) Low IF (TLP124) AC input Transistor output , SEMKO-approved TLP180 1 3 3 4 SOP4 Lead pitch = 1.27 mm AC input SEMKO-approved TLP280 1 , -channel version of the TLP280 Lead pitch = 1.27 mm AC input SEMKO-approved Rank ­ Y GR BL GB ­ Y GR , Transistor Transistor Transistor IC IC IC IC IC IC IC IC IC IC IC IC IC Transistor


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PDF CNY17-2 CNY17-3 CNY17-4 TLP105 TLP108 TLP109 TLP112 TLP112A TLP113 TLP114A p421f TLP350 equivalent NEC 10F triac A 3150 igbt driver TLP759 "cross reference" P181 Photocoupler pc817 equivalent TLP250 MOSFET DRIVER application note p421 Photocoupler TLP582 COMPATIBLE
2014 - Not Available

Abstract: No abstract text available
Text: (MPP mode, Ta=25 °C ) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical input source Vertical input gate , S7199-01/-01F Absolute maximum ratings (Ta=25 °C ) Parameter Storage temperature Operating , +15 +15 +15 +15 Unit °C °C V V V V V V V V V -15 - +15 V -15 - , V V 2 TDI-CCD area image sensor S7199-01/-01F Electrical characteristics (Ta=25 °C


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PDF S7199-01/-01F S7199-01 S7199-01F) KMPD1077E12
2012 - Not Available

Abstract: No abstract text available
Text: NPN Bipolar Transistor Features: • • • • Collector Emitter Breakdown Voltage DC , 0.046 J 0.711 1.22 0.028 0.048 K 12.7 - 0.5 - L 6.35 - 0.25 - M 45° BSC 45° BSC N 1.27 BSC 0.05 BSC P - 1.27 - 0.05 www.element14.com www.farnell.com www.newark.com Page <1> 11/01/12 V1.1 NPN Bipolar Transistor Maximum , dc Total Power Dissipation at TA = 25°C Derate above 25°C PD 360 2.06 mW mW/ °C


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PDF element14
Not Available

Abstract: No abstract text available
Text: q = 25°C Derate above 25°C Pd 15 0.12 Watts W / °C Total Power Dissipation* @ T /\ = 25°C Derate above 25°C Pd 1.56 0.012 Watts W / °C T j, TSfg - 6 5 t o + 150 °C Symbol Max Unit Therm al Resistance, Junction to Case R0JC 8.33 °c /w Therm al Resistance, Junction to Am bient* r 0JA 80 °c /w Tl 260 °c C o lle cto , SURFACE MOUNTED APPLICATIONS ELECTRICAL CHARACTERISTICS (T q = 2 5 °C unless otherwise noted


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PDF MJD340/D MJD340* MJD350* MJE340 MJE350
npn transistor w16

Abstract: SVM7962 DD 127 D TRANSISTOR transistor Vbe SVM7966 SVM7900 SVM79 SVM7963 resistor 820k Multi-Melody Generator cmos
Text: EPSON PF237-05 SVM7960C Series Multi-Melody IC •2 Sound Sources • 127 Words Melody ROM , preprogrammed ROM. The ROM has a capacity of 127 words and can store up to 4 melodies from two sound sources , capacity. 127 words •Up to 4 melodies (3 if it is direct melody selection method) can be performed. •Two sound sources with envelope (CR envelope) •DC or AC triggered , -ohm dynamic loudspeaker if provided externally with a transistor


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PDF PF237-05 SVM7960C SVM7900 750k-ohms 820k-ohms 130ktyp. 150ktyp. SVM7960 npn transistor w16 SVM7962 DD 127 D TRANSISTOR transistor Vbe SVM7966 SVM7900 SVM79 SVM7963 resistor 820k Multi-Melody Generator cmos
2014 - Not Available

Abstract: No abstract text available
Text: Per transistor single pulse; tp ≤ 1 ms Tamb ≤ 25 °C Per device Ptot total power , footprint Fig. 1. 150 225 Tamb ( °C ) 2 Per transistor : power derating curves 9. Thermal , Per transistor ICBO ICES collector-emitter cut-off VCE = 80 V; VBE = 0 V; Tamb = 25 °C , LFP AK 56 D PHPT610035NK NPN/NPN high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205


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PDF PHPT610035NK OT1205 LFPAK56D) PHPT610030NK. PHPT610035PK. PHPT610035NPK. AEC-Q101
MOTOROLA MJD122

Abstract: transistor 3568 darlington transistor with built-in temperature c TIP125-TIP127 motorola darlington power transistor JD122 P122 MSD6100 MJD127 369A-13
Text: overall value. REV 1 Motorola Bipolar Power Transistor Device Data 3-563 MJD122 MJD- 127 ELECTRICAL , Transistor Device Data TYPICAL ELECTRICAL CHARACTERISTICS MJD122 MJD- 127 PNP MJD127 20,000 10,000 s 7000 , CURRENT (AMP) Figure 4. "On" Voltages 3-664 Motorola Bipolar Power Transistor Device Data MJD122 MJD- 127 , Transistor Device Data MJD122 MJD- 127 RB & Rc VARIED TO OBTAIN DESIRED CURRENT LEVELS Di, MUST BE FAST , Total Power Dissipation* @ Ta - 25°C Derate above 25° C Pd 1.75 0.014 Watts W/ °C Operating and


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PDF 2N6040-2N6045 TiP120-T TIP125-TIP127 MJD122 MJD127 JD122 MOTOROLA MJD122 transistor 3568 darlington transistor with built-in temperature c motorola darlington power transistor P122 MSD6100 MJD127 369A-13
2014 - Not Available

Abstract: No abstract text available
Text: collector 6 cm (2) FR4 PCB, standard footprint Fig. 1. 150 225 Tamb ( °C ) 2 Per transistor , 100 nA VCB = 80 V; IE = 0 A; Tj = 150 °C - - 50 µA Per transistor ICBO ICES , LFP AK 56 D PHPT610030NK NPN/NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 , dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit


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PDF PHPT610030NK OT1205 LFPAK56D) PHPT610030PK. PHPT610030NPK. AEC-Q101
2009 - Not Available

Abstract: No abstract text available
Text: STS05DTP03 Dual NPN-PNP complementary bipolar transistor Features ■High gain ■Low , . Description The STS05DTP03 is a hybrid dual NPN-PNP complementary power bipolar transistor manufactured by , IC ICM IB IBM PTOT Total dissipation at Tamb = 25 °C single operation PTOT Total dissipation at Tamb = 25 °C couple operation Tstg Storage temperature Max. operating junction , bs O 2/10 ete ol ct du o Pr A A A 2 W 1.6 W -65 to 150 °C


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PDF STS05DTP03 STS05DTP03
SMD transistor UY

Abstract: smd transistor 406 TRANSISTOR SMD catalog 1981-R smd transistor 079 transistor SMD p05 transistor smd 127 LDA201 LDA200 LDA101
Text: Dissipation Per Stage (mW) Derate 1.33 mW/ °C above 25" Ambient 190 190 190 190 190 190 190 190 Max Cont , – AC and DC input versions available ■3,750 Volt input-to-output isolation ■Small DIP package , 25°C Min Max Units 2500 — VRMS 1011 _ Ohms — 2 PF -40 125 °C -40 85 °C _ 260 °C 33 â , LDA201 : Pkg. F LDA211 : Pkg. Single Transistor Detector (Typical) 0123456789 10 Collector-Emitter , : Single transistor ("0") or Darlington transistor ("1") output configuration ■Z: Number of input


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PDF LDA100 LDA101 LDA110 LDA111 LDA200 LDA201 LDA210 LDA211 SMD transistor UY smd transistor 406 TRANSISTOR SMD catalog 1981-R smd transistor 079 transistor SMD p05 transistor smd 127
B34 diode smd

Abstract: SMD Transistor 7f siemens smd DIODE B34
Text: -7-1 (Plastic Transistor Single Outline Package) 4.6, 1x45' 1.27 + W S 2.6 0.4+ ^10.6 ®l , Transistor Single Outline Package) 4.6 1.27 c 10.2 | 0.2 8.0 2.6 & 0.6 1.27 6x1.27 = , Symbol Value L Low side transistor is turned-ON; High side transistor is turned-OFF H High side transistor is turned-ON; Low side transistor is turned-OFF Z High side transistor and Low side transistor are turned-OFF A monitoring circuit for each output transistor detects whether the


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PDF Q67000-A9295 P-T0220-7-1 5207G Q67006-A9296 P-T0220-7-8 8235b05 D1037b5 -T0220-7-8 B34 diode smd SMD Transistor 7f siemens smd DIODE B34
2003 - Not Available

Abstract: No abstract text available
Text: power MOS transistor BLF246 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL , DISCRETE SEMICONDUCTORS DAT M3D060 BLF246 VHF power MOS transistor Product , VHF power MOS transistor BLF246 PINNING - SOT121B FEATURES • High power gain PIN â , 4 Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B , 25 °C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) PL


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PDF M3D060 BLF246 OT121B OT121B SCA75 613524/04/pp15
TRANSISTOR t1p

Abstract: T1P29C pa1b dissipator TO127 PA1-1U to220 transistor t1p29 transistor A953
Text: .375 110 100 90 80 70 60 50 40 30 20 10 0 PC1-1CB w/TIP-29C (TO-220) TRANSISTOR /A , « Thermal Resistance Case to Sink is 0.9-1.1 "C/W w/jolnt Compound. > Derate 2.4 °C /watt for unplated part in natural convection only. _1 .375 ¡9.53) 1 .05 .( 1.27 ) ¡LJ .375 (8.63) "T Dimensions are , . Black Anodlze Mil. Black Anodlze PC1-1U PCMCB PC 1-1B TO-126, TO- 127 , TO-220 1.9 PA1 Series J=L=jqn y-^bj 110 100 90 80 70 60 50 40 30 20 10 PA1-1U W/T1P-29C (TO-220) TRANSISTOR r i


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PDF w/TIP-29C O-220) O-126, O-127, O-220 TRANSISTOR t1p T1P29C pa1b dissipator TO127 PA1-1U to220 transistor t1p29 transistor A953
transistor SMD p05

Abstract: 1981-R TRANSISTOR SMD 2X y CP QUICK CONNECT L-398 smd transistor 406 LDA100 LDA101 LDA110 LDA111
Text: Dissipation Per Stage (mW) Derate 1.33 mW/ °C above 25" Ambient 190 190 190 190 190 190 190 190 Max Cont , – AC and DC input versions available ■3,750 Volt input-to-output isolation ■Small DIP package , 125 °C Operating Temperature -40 85 °C Lead Soldering Time (10 seconds on leads) — 260 °C , : Pkg. B LDA201 : Pkg. F LDA211 : Pkg. Single Transistor Detector (Typical) 0123456789 10 , 2) ■Y: Single transistor ("0") or Darlington transistor ("1") output configuration ■Z


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PDF LDA100 LDA101 LDA110 LDA111 LDA200 LDA201 LDA210 LDA211 transistor SMD p05 1981-R TRANSISTOR SMD 2X y CP QUICK CONNECT L-398 smd transistor 406
2N6034-2N6039

Abstract: buc ku 1N5825 369A-13 MJD6036 MJD6039 MSD6100 transistor 228 npn motorola
Text: Dissipation @ Tq = 25°C Derate above 25°C PD 20 0.16 Watts W/ °C Total Power Dissipation (1) @ Ta = 25°C Derate above 25°C PD 1.75 0.014 Watts W/ °C Operating and Storage Junction Temperature Range TJ> Tstg -65 to+150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R0JC 6.25 °C /W Thermal Resistance, Junction to Ambient (1) R9JA 71.4 °c /w 'ELECTRICAL , /Affirmative Action Employer. 2 Motorola Bipolar Power Transistor Device Data TYPICAL ELECTRICAL


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PDF D6036/D 2N6034-2N6039 MJD6036/D MJD6036/D buc ku 1N5825 369A-13 MJD6036 MJD6039 MSD6100 transistor 228 npn motorola
1999 - Mag Amp Cores and Materials

Abstract: Analyzing, Measuring, and Stabilizing Feedback Control Loops in Switching Regulators and Converters permalloy 80 50B12-1D 54C90-1E 50B66-1D 50B12-1E magnetic amplifier saturable core 50B10-5D TWC400
Text: loss (w)@50KHz, 2000 gauss (Max.) .118 ml cm 6.18 Ac cm2 .051 Wa See Note 1 348,000 , 50B11-5D in mm. .500 12.7 .430 10.9 .625 15.9 .695 17.6 .125 3.18 .200 5.08 , 0.38 1.3 50B12-5D in mm. .375 9.53 .305 7.75 .500 12.7 .570 14.5 .125 , 50B12-1E .027 .038 1.04 20B45-5D in. mm. .500 12.7 .430 10.9 .750 19.1 .820 , .151 6.6 50B45-1E .149 .151 5.7 50B66-5D in. mm. .500 12.7 .430 10.9


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PDF TWC-400, Mag Amp Cores and Materials Analyzing, Measuring, and Stabilizing Feedback Control Loops in Switching Regulators and Converters permalloy 80 50B12-1D 54C90-1E 50B66-1D 50B12-1E magnetic amplifier saturable core 50B10-5D TWC400
2007 - MPSA13

Abstract: No abstract text available
Text: MPSA13 NPN Darlington Transistor • This device is designed for applications requiring , °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test , MPSA13 NPN Darlington Transistor July 2007 Max. Units PD Symbol Total Device Dissipation Derate above 25°C Parameter 625 5.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C /W RθJA Thermal Resistance, Junction to Ambient 200 °C /W


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PDF MPSA13 MPSA13
h1208

Abstract: equivalent transistor c 495 92CS-223S5 radiosonde TA8340 NYTRONICS choke Nytronics relay 92CM-22389 transistor C4 168 H-1208
Text: -1208 750-mW, 1.68-GHz Oscillator Transistor Features: ■Emitter-ballasting resistors ■750 , lumped-element circuits Type 41038* is an epitaxial silicon n-p-n planar transistor with overlay multiple-emitter-site construction and emitter-ballasting resistors. Intended applications for this transistor include , . VCE0 21 V EMITTER-TO-BASE VOLTAGE .VEB0 3.5 V TRANSISTOR , / °C TEMPERATURE RANGE: Storage and Operating (Junction


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PDF H-1208 750-mW, 68-GHz 750-rnW TA8340. h1208 equivalent transistor c 495 92CS-223S5 radiosonde TA8340 NYTRONICS choke Nytronics relay 92CM-22389 transistor C4 168 H-1208
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