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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor a1271 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1996 - A1271 transistor

Abstract:
Text: +125°C –62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , €“15.3 –24.5 –33.2 –43.8 –53.1 –63.2 –75.5 –89.7 –105.0 –127.1 –153.7 176.4


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1995 - Not Available

Abstract:
Text: Frequency, MHz Thermal Characteristics θJC Active Transistor Power Dissipation Junction Temperature , €“105.0 –127.1 –153.7 176.4 149.7 126.0 .031 .034 .042 .056 .081 .114 .161 .215 .270


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PDF 1000MHz 5963-2457E
1996 - transistor A1036

Abstract:
Text: Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , €“74.5 –88.4 –101.9 –114.7 –127.1 –139.0 –150.5 –172.9 82.5 LINEARIZATION RANGE


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1995 - transistor A1277

Abstract:
Text: Thermal Characteristics θJC Active Transistor Power Dissipation Junction Temperature Above Case , €“112.5 –116.4 –120.1 –123.6 –127.1 –130.5 –133.9 –137.4 –140.9 –144.3 dB


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PDF 1000MHz 5963-2512E transistor A1277 a965 transistor A9992
1996 - Not Available

Abstract:
Text: +125°C –62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , €“116.4 –120.1 –123.6 –127.1 –130.5 –133.9 –137.4 –140.9 –144.3 dB 14.43 14.42


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1995 - A1308 transistor

Abstract:
Text: –62 to +150°C +100°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , €“52.3 –66.9 –81.0 –92.8 –102.7 –109.8 –114.9 –119.4 –123.2 –127.1 –130.8 â


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PDF 500MHz PP-38 375in. 5963-3232E 5963-2545E A1308 transistor
1998 - nec A1394

Abstract:
Text: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , −47.8 −83.4 −109.1 −127.1 −142.9 −156.1 −164.8 −173.0 177.9 169.6 164.0


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1997 - Not Available

Abstract:
Text: TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES PACKAGE , €“106.3 –114.4 –121.0 –127.1 –135.1 –139.8 –145.3 –151.2 –156.7 –162.9 â , €“62.4 –77.0 –88.8 –99.1 –107.2 –113.5 –119.5 –127.1 –131.8 –137.3 –142.8 â


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2001 - Not Available

Abstract:
Text: TRANSISTOR 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD , ˆ’106.3 −109.7 −113.4 −116.8 −120.4 −123.5 −127.1 3.0 4.0 5.0 0.638 0.683 0.745


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2002 - Not Available

Abstract:
Text: TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 , ˆ’18.8 −34.7 −49.8 −62.9 −76.1 −87.4 −98.0 −108.0 −118.1 −127.1 −135.6 â


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2001 - transistor A1024

Abstract:
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz • SiGe , 0.242 0.239 0.233 0.229 0.224 0.232 −122.3 −127.1 −132.3 −137.1 −142.2 â


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PDF 2SC5761 2SC5761-T2 transistor A1024 A1712 nec a1232
1999 - TV horizontal Deflection Systems

Abstract:
Text: of the paper is an introduction to the operation of the deflection transistor . The switching times , transistor technologies. The various options that a power transistor designer has are outlined. The transistor characteristics are divided into three areas: (i) edge termination, (ii) the emitter layout and , are mentioned in brief. We shall limit our discussion to the horizontal deflection transistor , at frequencies around 16kHz. The current requirements of the transistor switch varied between 2A


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PDF 16kHz 32kHz, 64kHz, 100kHz. TV horizontal Deflection Systems TRANSISTOR REPLACEMENT GUIDE an363 TV horizontal Deflection Systems 25 transistor horizontal section tv Horizontal Deflection Switching Transistors TV horizontal Deflection Systems mosfet horizontal section in crt television TV flyback transformer CRT TV electron gun
1999 - ADM6315-31D4ARTZR7

Abstract:
Text: STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown , -40°C to +125°C -40°C to +125°C Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 ADM6315 D00081-0-12/11 ADM6315-31D4ARTZR7 ADM6315-29D4ART-RL7 ADM6315-46D3ART branding llv transistor F 463 V/65e9 transistor
2006 - ADM6315-44D2ARTZR71

Abstract:
Text: -Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown in millimeters ORDERING GUIDE , Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 ADM6315 C00081-0-4/06 ADM6315-44D2ARTZR71 transistor C 2240 308 transistor ADM6315-29D2ARTZR71 sot143
1999 - TO-253-AA

Abstract:
Text: JEDEC STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA , 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 OT-143 D00081-0-9/07 TO-253-AA Small-outline integrated circuit SOT 143 46d1 transistor 143 308 transistor MDV 1-2 kv sot143 SOT-143 ADM6315-44D1ARTRL7 ADM6315-44D1ART-RL
1999 - Not Available

Abstract:
Text: TO JEDEC STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA , -Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4


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PDF OT-143 ADM6315 ADM811 OT-143 D00081-0-12/11
YG6260

Abstract:
Text: Transistor U tilization Precautions When semiconductors are being used, caution must be exercised , heat sink and minimize transistor stress. (1) Silicone grease A thin, even layer of silicone grease should be applied between the transistor and heat sink to improve thermal resistance. Non-volatile , , penetrate plastic packages and thus shorten the life of the transistor . The base oil of Toshiba Silicone Grease YG6260 does not easily separate and thus does not adversely affect the life of transistor . This


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1999 - transistor TO Outline Dimensions

Abstract:
Text: -253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown in millimeters , -40°C to +125°C Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4


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PDF OT-143 ADM6315 ADM811 ADM6315 D00081-0-9/13 transistor TO Outline Dimensions transistor d 140 g
2001 - "Phase Discriminator"

Abstract:
Text: power microwave transistor . RF power, phase and DC parameters are measured and recorded. Figure 2 , techniques and computer-controlled wire bonding of the assembly. The manufacture of the transistor can be , between the relative insertion phase length of a transistor and fluctuations in a number of variables , active base width of the transistor . - Emitter Ballast Resistance: Sheet resistance of the doped , transistor dice (as many as six single-packaged transistor ) and the accompanying matched MOS capacitors


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PDF AN569 "Phase Discriminator" AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study
1999 - TV horizontal Deflection Systems mosfet

Abstract:
Text: of the paper is an introduction to the operation of the deflection transistor . The switching times , transistor technologies. The various options that a power transistor designer has are outlined. The transistor characteristics are divided into three areas: (i) edge termination, (ii) the emitter layout and , are mentioned in brief. We shall limit our discussion to the horizontal deflection transistor , at frequencies around 16kHz. The current requirements of the transistor switch varied between 2A


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PDF 16kHz 32kHz, 64kHz, 100kHz. TV horizontal Deflection Systems mosfet TRANSISTOR REPLACEMENT GUIDE dtv32f15 flyback smps planar an363 electron gun CRT horizontal section in crt television Flyback transformer planar DTV32F1500A BU508A
bonitron

Abstract:
Text: M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · M3775RK Resistive , Modules · M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · M3775RK , · M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · M3775RK , Braking Modules · M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · , 67hp / 50kW and Above Braking Modules · M3452 Heavy Duty Braking Transistor · M3575T Standard


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2008 - w32 transistor

Abstract:
Text: Pull-up transistor control bit PU02 Pull-up transistor control bit PU01 Pull-up transistor control bit PU00 Pull-up transistor control bit PU12 Pull-up transistor control bit PU11 Pull-up transistor control bit PU10 Pull-up transistor control bit PU22 Pull-up transistor control bit PU21 Pull-up transistor control bit PU20 Pull-up transistor control bit REC05B0047-0200/Rev.2.00 455A Group at , retained 00002 P23 pull-up transistor OFF P23 pull-up transistor ON P22 pull-up transistor OFF P22


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PDF M3455AG8FP M3455AG8-XXXFP) M34559G6FP M34559G6-XXXFP) M3455AGCFP M3455AGC-XXXFP) REC05B0047-0200/Rev w32 transistor w41 transistor w33 transistor transistor k33 34 transistor w32 transistor p31 ic 4559 transistor 4559 455a transistor k33
2006 - Buck-Boost Converter advantages

Abstract:
Text: topology and switching transistor * Only available in ISODRAIN package 8 PWM+CCM PFC CoolSET TM , Power Supplies SMPS Controller with very few peripheral components, using MOS Transistor , magnetic coupling C Cheap solution Disadvantages C Power transistor drain-source voltage VDS = VO > VI , , ICE3DS01 Forward Converter Single Transistor Forward Converter Single-ended Forward Converter Advantages C Demagnetizing the core is no problem C Simple circuitry Disadvantages C Power transistor


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PDF B152-H8202-G4-X-7600 Buck-Boost Converter advantages SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
smd transistor marking 12W

Abstract:
Text: transistors, as described below: (1) Super Mini Transistor (TO-236 equivalent) The Super Mini Transistor , - J Z L Electrode Connections Model 1 Emitter Transistor Drain 2SK208/209 2SK210/211 Gate 2 Base Source Drain 3 Collector Gate Source Fig. 1 Outline Drawing of the Super Mini Transistor 94 (2) Power Mini Transistor (SOT-89 equivalent) Figure 2 shows an outline drawing of the Power Mini Transistor . The molded plastic por tion of this unit is compact, measuring 2.8 mm (L) by 4.5 mm (W


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PDF O-126 O-220 O-236 OT-23 O-220SM O-22QSM T0-220SM smd transistor marking 12W smd transistor 12W 3 pins SMD transistor Marking 13w transistor SMD 12W TRANSISTOR SMD 13W smd transistor 12W 98 transistor te 2305 smd transistor LY smd transistor 12W 12W smd transistor
2005 - LED DRIVER BY MC34063

Abstract:
Text: the best efficiency performance of bipolar transistor and diodes, Philips Semiconductors has , Step-down Regulator the switching waveforms for this regulator. Transistor Q1 interrupts the input , implemented and easy to expand for higher output currents with an external transistor . Further, this , . With built- in switch transistor , the MC34063 can switch up to 1.5 A current. But for higher output , transistor (s) Vin 0.15 8 7 6 5 1000uF DRc SWc Ipk SWe Vcc Ct FB Gnd 1


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PDF AN10360 MC34063, PBSS5320T, PMEG2020EJ LED DRIVER BY MC34063 schematic diagram mc34063 constant current led MC34063 5v MC34063 driver led mc34063 MC34063 application mc34063 pwm led MC34063 Application Notes mc34063 pwm mc34063 flyback
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