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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor TIP 31A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: . This also adds up to excellent cost performance. Incorporates a sensitivity adjuster (Excluding EX- 31â , . (Note) Sensing range EX- 31A Thru-beam SENSOR OPTIONS OPERABILITY 500 mm 19.685 in EX-31B EX- 31A -PN EX-31B-PN With operation mode switch PARTICULAR USE SENSORS No , 800 mm 31.496 in Light-ON PNP open-collector transistor Light-ON EX-33 EX-33-PN PNP open-collector transistor EX-32B EX-32A-PN EX-32B-PN Output operation NPN open-collector transistor


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PDF EX-30 EX-33 EX-31â RX-LS200 RT-610
2000 - Not Available

Abstract: No abstract text available
Text: Applications · Complement to TIP31/ 31A /31B/31C 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base , Rev. E Product Folder - Fairchild P/N TIP32B - PNP Epitaxial Silicon Transistor SEARCH , products >> Home find products space space space TIP32B Products groups PNP Epitaxial Silicon Transistor , Complement to TIP31/ 31A /31B/31C applications New products Product selection and back to top parametric search


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PDF TIP32 TIP32/32A/32B/32C) TIP31/31A/31B/31C O-220 TIP32 TIP32A TIP32B TIP32C
2000 - TRANSISTOR TIP31

Abstract: TIP31 NPN Transistor TO220 Semiconductor Packaging transistor cross reference Cross-Reference DATE transistor crossreference application TIP31 Tip31
Text: TIP31 Series(TIP31/ 31A /31B/31C) TIP31 Series(TIP31/ 31A /31B/31C) Medium Power Linear Switching , Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base , : TIP31C Collector Cut-off Current : TIP31/ 31A : TIP31B/31C Collector Cut-off Current : TIP31 : TIP31A , (TIP31/ 31A /31B/31C) Typical Characteristics VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 1000 , , February 2000 TIP31 Series(TIP31/ 31A /31B/31C) Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10


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PDF TIP31 TIP31/31A/31B/31C) TIP32/32A/32B/32C O-220 TIP31 TIP31A TIP31B TIP31C TRANSISTOR TIP31 TIP31 NPN Transistor TO220 Semiconductor Packaging transistor cross reference Cross-Reference DATE transistor crossreference application TIP31
texas instruments tip32

Abstract: tip 31c til 31a texas instruments tip31 TIP31C
Text: Collector-Emitter TE S T C O N D IT IO N S TIP31 M IN MAX T IP 31A M IN MAX TIP31B M IN MAX TIP 31C M IN MAX U N IT , based on th e c a p a b ility o f th e transistor to o perate safely in th e c irc u it o f Figure 2 . L , values show n are n om inal; exact values vary slightly w ith transistor param eters. 1 270 5.328


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PDF TIP31, TIP31A, TIP31B. TIP31C TIP32, TIP32A, TIP32B, TIP32C texas instruments tip32 tip 31c til 31a texas instruments tip31
Not Available

Abstract: No abstract text available
Text: condition OV. Sync tip clamp condition 5V. Center bias condition Center biased to approx , m Transistor used PIMP : 2SA1175 m Delay time « 1 90nsec „ I Transistor used , -A JEDEC CODE M O - O O Î - A H » EIAÜ * (Similar) — 9 — Ö3Ü23Ö3 D017QMS 31à ”


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PDF CXL5505M/P CXL5505M/P CXL5505M CXL5505P 100mW 300mil
Not Available

Abstract: No abstract text available
Text: ://www.sunx.co.jp/ M4 (Reflective type: M6) Thru-beam type (EX- 31â …ª) New thru-beam types now feature , head is possible. Emitter Standard thru-beam type Receiver EX- 31â …ª Convenient type , mm 19.685 in EX- 31A (-PN) EX-31B(-PN) M4 M6 Emitter Receiver 4 ORDER GUIDE EX , output PNP output EX- 31A EX-31B EX-31B-PN W15.6‫ן‬H14‫ן‬D7 mm W0.614‫ן‬H0.551‫ן‬D0.276 in With operation mode switch Output operation EX- 31A -PN 500 mm 19.685 in Diffuse


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PDF CX-400 EX-10 EX-20 EX-30 CX-400 EX-10SERIES Amplifie-32A EX-32B CE-EXLINE-10
2007 - AO4850

Abstract: No abstract text available
Text: AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features , 259 specifications). VDS (V) = 75V (VGS = 10V) ID = 3.1A RDS(ON) < 130m (VGS = 10V) RDS(ON , =5V, ID= 3.1A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Reverse Transfer Capacitance Rg , VGS=10V, VDS=30V, ID= 3.1A Gate Drain Charge tD(on) 130 5.14 VGS=0V, VDS=0V, f , TJ=125°C Static Drain-Source On-Resistance µA 100 VGS=10V, ID= 3.1A RDS(ON) Units V


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PDF AO4850 AO4850
Not Available

Abstract: No abstract text available
Text: AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features , 259 specifications). VDS (V) = 75V ID = 3.1A (VGS = 10V) RDS(ON) < 130mΩ (VGS = 10V) RDS(ON , =5V, ID= 3.1A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Reverse Transfer Capacitance , DelayTime tr 130 1.18 VGS=10V, VDS=30V, ID= 3.1A Gate Drain Charge tD(on) V 5.14 , Capacitance µA 105 TJ=125°C Static Drain-Source On-Resistance 5 100 VGS=10V, ID= 3.1A RDS


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PDF AO4850 AO4850
2005 - AO4442

Abstract: AO4442L
Text: AO4442 N-Channel Enhancement Mode Field Effect Transistor General Description Features The , Product ordering option. AO4442 and AO4442L are electrically identical. VDS (V) = 75V ID = 3.1A (VGS , 220 VGS=4.5V, ID=2A 120 165 VDS=5V, ID= 3.1A 8.2 VGS=10V, ID= 3.1A RDS(ON) Static , =37.5V, ID= 3.1A pF 1 nC Qgd Gate Drain Charge 1.34 nC tD(on) Turn-On DelayTime , ) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF= 3.1A , dI/dt


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PDF AO4442 AO4442 AO4442L AO4442L
2005 - AO6802

Abstract: AO6802L
Text: AO6802 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features , state drain current VGS=10V, VDS=5V 12 TJ=55°C 1.9 88 VDS=5V, ID= 3.1A Forward , 75 115 m m S 1 V 2.5 A 240 pF 40 pF pF VGS=10V, VDS=15V, ID= 3.1A , On-Resistance 5 100 VGS=10V, ID= 3.1A RDS(ON) Units 8.5 nC 3.1 4 nC nC 1.6 nC , IF= 3.1A , dI/dt=100A/µs 9.4 Qrr Body Diode Reverse Recovery Charge IF= 3.1A , dI/dt=100A/µs


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PDF AO6802 AO6802 AO6802L AO6802L
1999 - TRANSISTOR TIP31

Abstract: OF TRANSISTOR tip31 TIP31 NPN Transistor application TIP31 TIP31 application TIP31 80V 1A NPN Transistor
Text: TIP31 SERIES (TIP31/ 31A /31B/31C) NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 · Complement to TIP32/32A/32B/32C ABSOLUTE MAXIMUM RATINGS , : TIP31C : TIP31/ 31A Collector Cutoff Current : TIP31B/31C : TIP31 Collector Cutoff Current : TIP31A , Fairchild Semiconductor Corporation TIP31 SERIES (TIP31/ 31A /31B/31C) NPN EPITAXIAL SILICON TRANSISTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor


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PDF TIP31 TIP31/31A/31B/31C) O-220 TIP32/32A/32B/32C TIP31 TIP31A TIP31B TIP31C TRANSISTOR TIP31 OF TRANSISTOR tip31 TIP31 NPN Transistor application TIP31 TIP31 application 80V 1A NPN Transistor
2007 - AO6810

Abstract: No abstract text available
Text: AO6810 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features , =10V, VDS=5V 12 TJ=55°C 1.9 88 VDS=5V, ID= 3.1A Forward Transconductance Diode Forward , 54 TJ=125°C Static Drain-Source On-Resistance 5 100 VGS=10V, ID= 3.1A RDS(ON) Units A 240 pF 42 pF 20 pF VGS=10V, VDS=15V, ID= 3.1A 2.5 3.2 6.6 VGS , Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF= 3.1A , dI/dt=100A/µs 9.5 Qrr


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PDF AO6810 AO6810
range long sensor reflective

Abstract: Nut M40 npn sensor
Text: . Range (mm) Max. Range (in) Sort Sort Sort Sort Sort Sort Sort EX- 31A , . Type Thru-beam Diffuse reflective NPN output EX- 31A EX-31B EX-32A EX-32B PNP output EX- 31A -PN EX-31B-PN EX-32A-PN EX-32B-PN Sensing range 500 mm 19.685 in 50 mm , mA or less PNP open-collector transistor NPN open-collector transistor ·


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PDF EX-30 EX-32 EQ-30 range long sensor reflective Nut M40 npn sensor
IRF 940 TRANSISTOR

Abstract: irf 940 ir igbt 035H IRG4PC40SPbF
Text: PD -95171 IRG4PC40SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C , = 31A E n-channel Benefits · Generation 4 IGBT's offer highest efficiency available · , 1.0mA VGE = 15V 1.5 IC = 31A - IC = 60A See Fig.2, 5 V - IC = 31A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA - mV/°C VCE = VGE, IC = 250µA - S VCE = 100V, IC = 31A 250 VGE = 0V, VCE = , 150 IC = 31A 21 nC VCC = 400V See Fig. 8 51 VGE = 15V - - TJ = 25°C ns 980 IC = 31A


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PDF IRG4PC40SPbF O-247AC O-247AC IRF 940 TRANSISTOR irf 940 ir igbt 035H IRG4PC40SPbF
2000 - TIP31

Abstract: TRANSISTOR TIP31 TIP31 data sheet TIP31A TIP31B TIP31C tip31cv
Text: TIP31 Series(TIP31/ 31A /31B/31C) TIP31 Series(TIP31/ 31A /31B/31C) Medium Power Linear Switching Applications · Complementary to TIP32/32A/32B/32C TO-220 1 1.Base NPN Epitaxial Silicon Transistor , : TIP31A : TIP31B : TIP31C Collector Cut-off Current : TIP31/ 31A : TIP31B/31C Test Condition IC = , Derating Rev. A, February 2000 TIP31 Series(TIP31/ 31A /31B/31C) Typical Characteristics TIP31 Series(TIP31/ 31A /31B/31C) Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10


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PDF TIP31 TIP31/31A/31B/31C) TIP32/32A/32B/32C O-220 TIP31 TIP31A TIP31B TIP31C TRANSISTOR TIP31 TIP31 data sheet TIP31A TIP31B TIP31C tip31cv
2006 - ISL9003A

Abstract: ISL9003AIEFZ-T ISL9003AIEHZ-T ISL9003AIEJZ-T ISL9003AIEKZ-T ISL9003AIEMZ-T ISL9003AIENZ-T
Text: current of 31A (typical), and 0.5A shutdown current, the ISL9003A is an ideal choice for portable , quiescent current: 31A · Low dropout voltage: typically 200mV @ 150mA · Low output noise: typically 20VRMS , high-gain operational amplifier driving a PMOS pass transistor . The design of the ISL9003A provides a , .2 November 6, 2007 ISL9003A Small Outline Transistor Plastic Packages (SC70-5) P5.049 D VIEW C e1 5 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE INCHES 5 SYMBOL 4 MIN


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PDF ISL9003A FN6299 ISL9003A 150mA 20VRMS ISL9003AIEFZ-T ISL9003AIEHZ-T ISL9003AIEJZ-T ISL9003AIEKZ-T ISL9003AIEMZ-T ISL9003AIENZ-T
1997 - IRGPC40

Abstract: IRGPC40S
Text: PD - 9.692 IRGPC40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C · , . 1 for Current vs. Frequency curve VCES = 600V VCE(sat) 1.8V G @VGE = 15V, IC = 31A E , VGE = 0V, IC = 250µA -V VGE = 0V, IC = 1.0A - V/°C VGE = 0V, IC = 1.0mA 1.8 IC = 31A VGE = 15V See Fig. 2, 5 -V IC = 60A -IC = 31A , TJ = 150°C 5.5 VCE = VGE, IC = 250µA - mV/°C VCE = VGE, IC = 250µA -S VCE = 100V, IC = 31A 250 µA VGE = 0V, VCE = 600V 1000 VGE = 0V, VCE


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PDF IRGPC40S 400Hz) IRGPC40 IRGPC40S
IRGPC40S

Abstract: No abstract text available
Text: PD - 9.692 IRGPC40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C · , . 1 for Current vs. Frequency curve VCES = 600V VCE(sat) 1.8V G @VGE = 15V, IC = 31A E , - V/°C VGE = 0V, IC = 1.0mA 1.8 IC = 31A VGE = 15V See Fig. 2, 5 -V IC = 60A -IC = 31A , TJ = 150°C 5.5 VCE = VGE, IC = 250µA - mV/°C VCE = VGE, IC = 250µA -S VCE = 100V, IC = 31A , Max. Units Conditions 90 IC = 31A 15 nC VCC = 400V See Fig. 8 40 VGE = 15V -TJ = 25


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PDF IRGPC40S 400Hz) IRGPC40S
dew point sensor

Abstract: tube light wiring diagram EX-32A-PN EX-32-PN EX-31A-PN
Text: : 500mm, reflective type: 50mm.] 500mm Thru-beam type EX- 31A (-PN) EX-31B(-PN) 50mm Reflective , reflective 500mm 50mm Model No. Output EX- 31A EX-31B EX- 31A -PN EX-31B-PN EX-32A EX-32B EX-32A-PN EX-32B-PN Output operation NPN open-collector transistor PNP open-collector transistor NPN open-collector transistor PNP open-collector transistor Light-ON Dark-ON Light-ON , . SPECIFICATIONS Model No. Item Type NPN output PNP output Thru-beam EX- 31A EX- 31A -PN Diffuse


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PDF EX-30 EX-30 EX-31 EX-31-PN EX-32 EX-32-PN OS-EX30-1 dew point sensor tube light wiring diagram EX-32A-PN EX-32-PN EX-31A-PN
zener diodes color coded

Abstract: light FLUORESCENT TUBE colour code diode zener fluorescent lamp starter step down transformer 30v ZENER SINGLE COLOR CODE circuit fluorescent tube 24v conventional fluorescent lamp starter fluorescent tube starter SMALL high frequency transformer
Text: , reflective type: 50mm.] 500mm Thru-beam type EX- 31A (-PN) EX-31B(-PN) 50mm Reflective type EX , reflective 500mm 50mm Model No. Output EX- 31A EX-31B EX- 31A -PN EX-31B-PN EX-32A EX-32B EX-32A-PN EX-32B-PN Output operation NPN open-collector transistor PNP open-collector transistor NPN open-collector transistor PNP open-collector transistor Light-ON Dark-ON Light-ON , . SPECIFICATIONS Model No. Item Type NPN output PNP output Thru-beam EX- 31A EX- 31A -PN Diffuse


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PDF EX-30 EX-30 OS-EX30-1 CE-EX30-10 zener diodes color coded light FLUORESCENT TUBE colour code diode zener fluorescent lamp starter step down transformer 30v ZENER SINGLE COLOR CODE circuit fluorescent tube 24v conventional fluorescent lamp starter fluorescent tube starter SMALL high frequency transformer
2006 - transistor TIP 31A

Abstract: ISL9003A ISL9003AIEFZ-T ISL9003AIEHZ-T ISL9003AIEJZ-T ISL9003AIEKZ-T ISL9003AIEMZ-T ISL9003AIENZ-T
Text: quiescent current of 31A (typical), and 0.5A shutdown current, the ISL9003A is an ideal choice for portable , quiescent current: 31A · Low dropout voltage: typically 200mV @ 150mA · Low output noise: typically 20VRMS , PMOS pass transistor . The design of the ISL9003A provides a regulator that has low quiescent current , 1.25 LAND PATTERN 10 6 FN6299.1 December 21, 2006 ISL9003A Small Outline Transistor Plastic Packages (SC70-5) P5.049 D VIEW C e1 5 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE


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PDF ISL9003A FN6299 ISL9003A 150mA 20VRMS transistor TIP 31A ISL9003AIEFZ-T ISL9003AIEHZ-T ISL9003AIEJZ-T ISL9003AIEKZ-T ISL9003AIEMZ-T ISL9003AIENZ-T
Not Available

Abstract: No abstract text available
Text: transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal , QGS QGD VSD TT R8jc Rflja ID = 31 A, VGD = 0 I = 31A ; di/dt = 100A/jis Free Air Operation VDD = 100V, ID = 31A IGS1 - IGS2 0 < Vgs < 20 TEST CONDITIONS VGS = 0, ID = 1mA VDS = VGS, ID = 1mA VGS = +20V , 10V, ID = 31A VGS = 10V, ID = 19A VDD = 100V, ID = 31A Pulse Width = 3|is Period = 300ns Rg = 10 £ 2 0 , , VDS = 0 VGS = -20V, VDS = 0 VGS = 0, VDS = 160V VGS = 0, VDS = 160V VGS = 10V, ID = 31A VGS = 16V, ID


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PDF FRE260D, FRE260R, E260H O-258AA 100KRAD 300KRAD 1000KRAD 3000KRAD
Not Available

Abstract: No abstract text available
Text: PD - 95175A IRG4BC40SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features , @VGE = 15V, IC = 31A E n-channel Benefits • Generation 4 IGBTs offer highest efficiency , 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA 1.5 IC = 31A VGE = 15V — IC = 60A See Fig.2, 5 V — IC = 31A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 31A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ


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PDF 5175A IRG4BC40SPbF O-220AB O-220AB
2010 - Irg4bc40spbf

Abstract: No abstract text available
Text: PD - 95175A IRG4BC40SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features , = 31A E n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs , IC = 31A IC = 60A See Fig.2, 5 V IC = 31A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA mV/°C VCE = VGE, IC = 250µA S VCE = 100V, IC = 31A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = , . Units Conditions 150 IC = 31A 21 nC VCC = 400V See Fig. 8 51 VGE = 15V TJ = 25°C ns 980


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PDF 5175A IRG4BC40SPbF O-220AB O-220AB 4BC40SPbF Irg4bc40spbf
1997 - IRGPC40S

Abstract: No abstract text available
Text: PD - 9.692 IRGPC40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C · , . 1 for Current vs. Frequency curve VCES = 600V VCE(sat) 1.8V G @VGE = 15V, IC = 31A E , VGE = 0V, IC = 250µA -V VGE = 0V, IC = 1.0A - V/°C VGE = 0V, IC = 1.0mA 1.8 IC = 31A VGE = 15V See Fig. 2, 5 -V IC = 60A -IC = 31A , TJ = 150°C 5.5 VCE = VGE, IC = 250µA - mV/°C VCE = VGE, IC = 250µA -S VCE = 100V, IC = 31A 250 µA VGE = 0V, VCE = 600V 1000 VGE = 0V, VCE


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PDF IRGPC40S 400Hz) IRGPC40S
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