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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor STRC 246 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - Not Available

Abstract: No abstract text available
Text: limited. Secondly, when excessive voltage is sensed across the transistor , the transistor is switched off , output switches. The output slope is defined by the gate−drain capacitance of output transistor and , “active diodes”: when a current is forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through the channel of the transistor instead of through the inherent parasitic drain−bulk diode of the


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PDF AMIS-30542 AMIS-30542 30542/D
2012 - AMIS30542C5421G

Abstract: No abstract text available
Text: limited. Secondly, when excessive voltage is sensed across the transistor , the transistor is switched off , output switches. The output slope is defined by the gate-drain capacitance of output transistor and the , ": when a current is forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through the channel of the transistor instead of through the inherent parasitic drain-bulk diode of the transistor


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PDF AMIS-30542 AMIS-30542/D AMIS30542C5421G
2012 - 30532

Abstract: C532 diode AMIS-30532 30532 64 amis30532
Text: voltage is sensed across the transistor , the transistor is switched-off. In order to reduce the radiated , by the gate-drain capacitance of output transistor and the (limited) current that drives the gate , transistors are equipped with so-called "active diodes": when a current is forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through the channel of the transistor instead of through the inherent


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PDF AMIS-30532 AMIS-30532/D 30532 C532 diode 30532 64 amis30532
2009 - C532 diode

Abstract: No abstract text available
Text: . Secondly, when excessive voltage is sensed across the transistor , the transistor is switched-off. In , switches. The output slope is defined by the gate-drain capacitance of output transistor and the (limited , is forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through the channel of the transistor instead of through the inherent parasitic drain-bulk diode of the transistor . Depending on the desired


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PDF AMIS-30532 AMIS-30532/D C532 diode
2009 - AMIS-30542

Abstract: A114 C542 JESD22 step motor driver nxt
Text: the transistor , the transistor is switched off. In order to reduce the radiated/conducted emission , gate-drain capacitance of output transistor and the (limited) current that drives the gate. There are two , transistors are equipped with so-called "active diodes": when a current is forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through the channel of the transistor instead of through the


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PDF AMIS-30542 AMIS-30542 AMIS-30542/D A114 C542 JESD22 step motor driver nxt
2009 - C532 transistor

Abstract: diode cc 3053 AMIS30532C5321RG C532 diode NQFP-32 nqfp 30532 JESD-51 step motor driver nxt stepper motor sla
Text: limited. Secondly, when excessive voltage is sensed across the transistor , the transistor is switched-off , output switches. The output slope is defined by the gate-drain capacitance of output transistor and the , current is forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through the channel of the transistor instead of through the inherent parasitic drain-bulk diode of the transistor


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PDF AMIS-30532 AMIS-30532/D C532 transistor diode cc 3053 AMIS30532C5321RG C532 diode NQFP-32 nqfp 30532 JESD-51 step motor driver nxt stepper motor sla
CD4529BC

Abstract: CD4529 4529B
Text: . Derate Linearity at 12mW/°C to 200mW DEVICE DISSIPATION PER OUTPUT TRANSISTOR FOR Ta = FULL , ss (S q u a re W ave), t r,tf=20 ns 5 1Ü 15 20 10 8 40 20 15 ns CONTROL (ADDRESS OR STRC


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PDF CD4529B 20-Volt 4529B CD4529B. CD4529BC CD4529
2000 - Not Available

Abstract: No abstract text available
Text: then closes the SCP terminal by turning transistor Q2 on. · Protection Latch Circuit 2.46 V 1 µA , circuit Built-in under-voltage lockout circuit Built-in 2.46 V reference voltage circuit : 1.23 V output , terminal. Output transistor has common ground independent of signal ground. This output can source or sink up to 50 mA. Power supply terminal (3.6 to 18 V) Open collector output terminal. Output transistor , for timer latch short-circuit protection circuit". 2.46 V reference voltage output terminal which can


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PDF DS04-27203-6E MB3778 MB3778 F0012
circuit diagram of a laser lighter

Abstract: No abstract text available
Text: open-collector transistor NA1-PK3-PN PNP open-collector transistor 30 to 300 mm 1.181 to 11.811 in Beam pitch 24.6 mm 0.969 in Notes: 1) The sensing range is the possible setting distance between , 49.2 mm 1.937 in Sensing range (Note 2) 30 to 300 mm 1.181 to 11.811 in Beam pitch 24.6 mm , open-collector transistor NPN open-collector transistor • Maximum source current: 100 mA • Maximum sink , diode Tr : PNP output transistor E : Job indicator (IND.) Color code / Connector pin No. of


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PDF
2000 - AN8015SH

Abstract: No abstract text available
Text: .) circuit · Incorporating a high precision reference voltage circuit ( 2.46 V (allowance: ± 3%) · Output , + Error amp. 2 0.5 V Triangular wave OSC 1.2 V PWM comparator 0.37 V Reference supply 2.46 , Symbol Conditions Min Typ Max Unit 2.386 2.46 2.534 V Reference voltage , 0.9 1.2 V Output leak current ILEAK VCC = 34 V, when output transistor is off , O VREF: The output terminal for the reference voltage ( 2.46 VREF overcurrent detection V


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PDF AN8015SH AN8015SH 10-pin
Not Available

Abstract: No abstract text available
Text: transistor . Practically, the 6/8 Figure 2: Typical toff vs. Capacity of C 0 50 100 1 50 2 0 0 2 , ), then it increases d ing the first period of the source transistor switi off (source,1st) and it becom , requii RPM is reached, it becom e of no need a strc torque and the LIN Vref starting from a va higher


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PDF L6232A L6232A PLCC44 M91L6232-13
2002 - Not Available

Abstract: No abstract text available
Text: precision reference voltage circuit ( 2.46 V (allowance: ± 3%) • Output block is open-collector , 1.2 V PWM comparator 0.37 V Reference supply 2.46 V (allowance : ± 3%) 8 RT CT , 2.386 2.46 2.534 V Reference voltage block Reference voltage VREF IREF = −1 mA , V, when output transistor is off   10 µA RT terminal voltage VRT ï , reference voltage ( 2.46 VREF overcurrent detection V) Use with a load current −3 mA or under. This


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PDF AN8015SH AN8015SH 10-pin
2003 - AN8015SH

Abstract: No abstract text available
Text: lock-out (U.V.L.O.) circuit · Incorporating a high precision reference voltage circuit ( 2.46 V (allowance , PWM comparator 0.37 V Reference supply 2.46 V (allowance : ± 3%) Error amp. Pl ea M , Min Typ Max Unit 2.386 2.46 2.534 V Reference voltage block Reference voltage , current ILEAK VCC = 34 V, when output transistor is off 10 µA RT terminal voltage , reference voltage ( 2.46 VREF overcurrent detection V) Use with a load current -3 mA or under. This


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PDF AN8015SH AN8015SH
2003 - TRANSISTOR 246

Abstract: AN8015SH
Text: circuit ( 2.46 V (allowance: ± 3%) · Output block is open-collector (darlington) type. · High absolute , supply 2.46 V (allowance : ± 3%) 8 RT CT VREF 1 6 Block Diagram 7 VCC · , Min Typ Max Unit 2.386 2.46 2.534 V Reference voltage block Reference voltage , current ILEAK VCC = 34 V, when output transistor is off 10 µA RT terminal voltage , reference voltage ( 2.46 VREF overcurrent detection V) Use with a load current -3 mA or under. This


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PDF AN8015SH AN8015SH 10-pin TRANSISTOR 246
AN8015SH

Abstract: No abstract text available
Text: .) circuit · Incorporating a high precision reference voltage circuit ( 2.46 V (allowance: ± 3%) · Output , + 2 0.5 V Triangular wave OSC 1.2 V PWM comparator 0.37 V Reference supply 2.46 V , 2.386 2.46 2.534 V Reference voltage block Reference voltage VREF IREF = -1 mA , , when output transistor is off 10 µA RT terminal voltage VRT 0.5 V , voltage ( 2.46 VREF overcurrent detection V) Use with a load current -3 mA or under. This terminal is


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PDF AN8015SH AN8015SH 10-pin
1994 - Not Available

Abstract: No abstract text available
Text: the SCP terminal (pin 15) by turning transistor Q2 on. • Protection Latch Circuit 2.46 V 1 µA , short-circuit protection circuit Built-in under-voltage lockout circuit Built-in 2.46 V reference voltage , soft-start operation. 7 OUT1 Open collector output terminal. Output transistor has common ground , . Output transistor has common ground independent of signal ground. This output can source or sink up to , CONSTANT FOR TIMER LATCH SHORT-CIRCUIT PROTECTION CIRCUIT”. 16 VREF 2.46 V reference voltage


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PDF
1994 - LCD 16PIN

Abstract: FPT-16P-M05 FPT-16P-M06 MB3778 SSOP-16 IRT 1250
Text: terminal (pin 15) by turning transistor Q2 on. · Protection Latch Circuit 2.46 V 1 µA S.C.P. Comp , timer latch short-circuit protection circuit Built-in under-voltage lockout circuit Built-in 2.46 V , soft-start operation. 7 OUT1 Open collector output terminal. Output transistor has common ground , VCC 10 OUT2 Open collector output terminal. Output transistor has common ground independent , TIMER LATCH SHORT-CIRCUIT PROTECTION CIRCUIT". 16 VREF 2.46 V reference voltage output


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PDF DS04-27203-8Ea MB3778 MB3778 LCD 16PIN FPT-16P-M05 FPT-16P-M06 SSOP-16 IRT 1250
1994 - Not Available

Abstract: No abstract text available
Text: closes the SCP terminal (pin 15) by turning transistor Q2 on. · Protection Latch Circuit 2.46 V 1 µA , short-circuit protection circuit Built-in under-voltage lockout circuit Built-in 2.46 V reference voltage , soft-start operation. Open collector output terminal. Output transistor has common ground independent of , collector output terminal. Output transistor has common ground independent of signal ground. This output can , , see " HOW TO SET TIME CONSTANT FOR TIMER LATCH SHORT-CIRCUIT PROTECTION CIRCUIT". 2.46 V reference


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PDF DS04-27203-8E MB3778 MB3778 F0605
1999 - Not Available

Abstract: No abstract text available
Text: (U.V.L.O.) circuit · Incorporating a high precision reference voltage circuit ( 2.46 V (allowance : ± 3%) · , CT 1 1.2 V 0.37 V 6 7 Reference supply 2.46 V (allowance : ± 3%) 0.5 V Triangular wave , +25°C Ta = 25°C to 85°C 2.386 2.46 5 2 ± 0.5 ± 0.5 -20 2.534 20 10 10 V mV mV mV % % mA Symbol , VREF : The output terminal for the reference voltage VREF overcurrent detection ( 2.46 V) Use with a , Maximum duty ratio Dumax (%) 90.0 2.47 89.5 2.46 2.45 -40 -20 0 20 40 60


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PDF AN8015SH AN8015SH 10-pin
1994 - Not Available

Abstract: No abstract text available
Text: Built-in 2.46 V reference voltage circuit : 1.23 V output can be obtained from RT terminal Variable , . Output transistor has common ground independent of signal ground. This output can source or sink up to , . Output transistor has common ground independent of signal ground. This output can source or sink up to , CIRCUIT”. 16 VREF 2.46 V reference voltage output terminal which can be obtained up to 1 mA , MB3778 s BLOCK DIAGRAM 9 14 2 1 1.23 V 2.46 V 16 Reference Voltage 1.9 V Power


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PDF DS04-27203-8Ea MB3778 MB3778 MB3778â
2003 - FPT-16P-M05

Abstract: FPT-16P-M06 MB3778 MB3778P MB3778PF MB3778PFV
Text: transistor Q2 on. · Protection Latch Circuit 2.46 V 1 µA S.C.P. Comp. 15 R1 Error Amp. 1 Error , short-circuit protection circuit Built-in under-voltage lockout circuit Built-in 2.46 V reference voltage , . Output transistor has common ground independent of signal ground. This output can source or sink up to , . Output transistor has common ground independent of signal ground. This output can source or sink up to , ". 16 VREF 2.46 V reference voltage output terminal which can be obtained up to 1 mA. This pin is


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PDF DS04-27203-7E MB3778 MB3778 F0308 FPT-16P-M05 FPT-16P-M06 MB3778P MB3778PF MB3778PFV
transistor BD 246

Abstract: transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 BD136 transistor BD 241 240BD
Text: BD136 PNP EPITAXIAL PLANAR SILICON TRANSISTOR _1171 DESIGNED FOR COMPLEMENTARY USE WITH BD135 • Driver Stages • Active Convergence • Control Circuits • Switching Application â , Instruments 2-13 BD136 PNP EPITAXIAL PLANAR SILICON TRANSISTOR electrical characteristics at 25 °C , 30 0,3 BD 246 BD 245 80 -45 -10 40 1 BD 246 A BD 245 A 80 -60 -10 40 1 BD 246 B BD 245 B 80 -80 -10 40 1 BD 246 C BD 245 C 80 -100 -10 40 1 BD 250 BD 249 125 -45 -25 25 1,5 BD 250 A BD 249 A


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PDF BD136 BD135 MIL-STD-750. OT-32 40PEP 80PEP OT-32 O-66P transistor BD 246 transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 BD136 transistor BD 241 240BD
2000 - FPT-16P-M05

Abstract: FPT-16P-M06 MB3778 MB3778P MB3778PF MB3778PFV REGULATOR latch disable 16-pin dip
Text: terminal by turning transistor Q2 on. · Protection Latch Circuit 2.46 V 1 µA S.C.P. Comp. 15 R1 , short-circuit protection circuit Built-in under-voltage lockout circuit Built-in 2.46 V reference voltage , . Output transistor has common ground independent of signal ground. This output can source or sink up to , . Output transistor has common ground independent of signal ground. This output can source or sink up to , ". 16 VREF 2.46 V reference voltage output terminal which can be obtained up to 1 mA. This pin is


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PDF DS04-27203-6E MB3778 MB3778 FPT-16P-M05 FPT-16P-M06 MB3778P MB3778PF MB3778PFV REGULATOR latch disable 16-pin dip
transistor BD 246

Abstract: transistor BD 135 BD135 switch transistor bd 242 transistor BD 249 bd135 texas instruments transistor BD BD139-6 transistor BD 246 b BD139
Text: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR _1171 DESIGNED FOR COMPLEMENTARY USE WITH BD136 • Driver Stages • Active Convergence • Control Circuits • Switching Application â , TRANSISTOR electrical characteristics at 25 °C free-air temperature (unless otherwise noted) PARAMETER , C BD 243 C 65 -100 -6 30 0,3 BD 246 BD 245 80 -45 -10 40 1 BD 246 A BD 245 A 80 -60 -10 40 1 BD 246 B BD 245 B 80 -80 -10 40 1 BD 246 C BD 245 C 80 -100 -10 40 1 BD 250 BD 249 125 -45 -25 25


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PDF BD135 BD136 STD-750. OT-32 40PEP 80PEP OT-32 O-66P transistor BD 246 transistor BD 135 BD135 switch transistor bd 242 transistor BD 249 bd135 texas instruments transistor BD BD139-6 transistor BD 246 b BD139
BDX 241

Abstract: transistor BD 246 transistor BD 240 TRANSISTOR 246 TRANSISTOR Bd 137 BD139-6 transistor bd 242 transistor BD 249 BD138 2n 3055 transistor
Text: BD137 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR _TT71 DESIGNED FOR COMPLEMENTARY USE WITH BD138 • Driver Stages • Active Convergence • Control Circuits • Switching Application â , . Texas Instruments 2-15 BD137 NPN EPITAXIAL PLANAR SILICON TRANSISTOR electrical characteristics at , 243 B 65 -80 -6 30 0,3 BD 244 C BD 243 C 65 -100 -6 30 0,3 BD 246 BD 245 80 -45 -10 40 1 BD 246 A BD 245 A 80 -60 -10 40 1 BD 246 B BD 245 B 80 -80 -10 40 1 BD 246 C BD 245 C 80 -100 -10 40 1


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PDF BD137 BD138 MIL-STD-750. OT-32 OT-32 40PEP 80PEP BDX 241 transistor BD 246 transistor BD 240 TRANSISTOR 246 TRANSISTOR Bd 137 BD139-6 transistor bd 242 transistor BD 249 BD138 2n 3055 transistor
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