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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
UJ3C065080T3S UJ3C065080T3S ECAD Model UnitedSiC Power Field-Effect Transistor
UF3C065080B7S UF3C065080B7S ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-7L
UF3C120150K4S UF3C120150K4S ECAD Model UnitedSiC 1200V-150mΩ SiC FET TO-247-4L
UF3SC120040B7S UF3SC120040B7S ECAD Model UnitedSiC 1200V-35mΩ SiC FET D2PAK-7L
UJ3C065080B3 UJ3C065080B3 ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-3L
UJ4C075023B7S UJ4C075023B7S ECAD Model UnitedSiC 750V-23mΩ SiC FET D2PAK-7L

transistor SMD DK QB Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
LCD-8162JP

Abstract: No abstract text available
Text: LCTR, DK 72 SKIN, ÈAÔKUP 74 FMIN FM local-oscillator input 76 AMIN Am local-oscillator input 76 VSS Ground FMIF or AMIF signal input AMIF or 125 Hz DK signal input SK , =4.5 to 5.5 V 0.4 - 12.0 MHz fis AMIF signal and V lc tr = 0.15 to 1.5 V , or DK , input can be used instead of the SK IN transistor in die transistor matrix. When the remote control function is not used, this input can be used instead of the TA PE transistor in the transistor matrix


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PDF LC7232-8377 3044B LC7232-8377 cl707fci D0U571 LA1875M LCD-8162JP
transistor dk 50

Abstract: No abstract text available
Text: KSR2006 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) · Switching circuit, Inverter, Interface circuit, Driver Circuit · Built in bias Resistor (R ^ IO K iî, R2 , cb= -40V, Ie=0 V ce= -5V, lc= -5mA lc= -10mA, lB= -0.5mA V qb = -10V, lE=0 f=1.0MHz V ce= -10mA, lc , Semiconductor Corporation KSR2006 PNP EPITAXIAL SILICON TRANSISTOR INPUT ON VO LTAGE DC CU RREN T GAIN :vC E =-sv -500 -300 z -R i =1 DK !f!î=<7K s £ < ° I- -1 0 0 3 o o o -5 0


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PDF KSR2006 47Ki2) KSR1006 transistor dk 50
transistor SMD DK QB

Abstract: transistor L43 SMD pb 3g smd transistor TRANSISTOR SMD MARKING CODE 3f MARKING SMD pnp TRANSISTOR ec transistor SMD DK 33
Text: purpose switching and amplification especially in portable equipment. DESCRIPTION PNP transistor encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. NPN complements: BC846F, BC847F and BC848F , < 25 °C; note 1 - -6 5 - -6 5 °c °c Note 1. Transistor mounted on an FR4 , to ambient CONDITIONS in free air; note 1 VALUE 500 UNIT K/W Note 1. Transistor , 0, V qb = - 30 V |E = 0, VCB = -3 0 V, Tj = 150 °C - MIN. MAX. -1 5 -5 -10 0 UNIT nA ^A


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PDF BC856F; BC857F; BC858F SC-89 OT490) BC846F, BC847F transistor SMD DK QB transistor L43 SMD pb 3g smd transistor TRANSISTOR SMD MARKING CODE 3f MARKING SMD pnp TRANSISTOR ec transistor SMD DK 33
transistor SMD DK QB

Abstract: B0847 smd transistor marking n3 transistor L43 SMD smd transistor marking 1j smd transistor L43 1J smd MARKING SMD pnp TRANSISTOR ec BC848F TRANSISTOR SMD MARKING CODE 1l
Text: purpose switching and amplification, especially in portable equipment. DESCRIPTION NPN transistor encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. PNP complements: BC856F, BC857F and BC858F , Tj T am b Tamb < 25 °C; note 1 - -65 - -65 °c °c Note 1. Transistor mounted on an , . Transistor mounted on an FR4 printed-circuit board. 1998 Nov 10 3 Philips Semiconductors , frequency noise figure CONDITIONS Ie = 0, V qb = 30 V lE = 0, VCB = 30 V, Tj = 150 °C > o > LO MIN


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PDF BC846F; BC847F; BC848F SC-89 OT490) BC856F, BC857F BC858F transistor SMD DK QB B0847 smd transistor marking n3 transistor L43 SMD smd transistor marking 1j smd transistor L43 1J smd MARKING SMD pnp TRANSISTOR ec TRANSISTOR SMD MARKING CODE 1l
2006 - thermistor 100k

Abstract: ECJ-2YB1H104K ecj2yb1h104k smd transistor ne c2 transistor SMD DK ERJ3GSY0R00V philips thermistor 250 ohm RK73ZETTP 600S0R5BT250XT 600s3r3bt250xt
Text: robust 3 Watt high performance LDMOS transistor designed for operation from 10 MHz to 2700 MHz. It is an , power transistor is fabricated using RFMD's latest, high performance LDMOS II process. This product , applied to the transistor unless it is properly terminated on both input and output. Note 2: The , . Transistor RF input and gate bias voltage. The gate bias voltage must be temperature compensated to maintain , package. Bus them to pin 5 as shown in the application circuit. Transistor RF output and drain bias


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PDF SLD-1026Z SOF-26 SLD-1026Z-EVAL-2 SLD-1026Z-EVAL-3 SLD-1026Z-EVAL-4 SLD-1026Z-EVAL-5 SLD-1026Z-EVAL-6 SLD-1026Z-EVAL-7 thermistor 100k ECJ-2YB1H104K ecj2yb1h104k smd transistor ne c2 transistor SMD DK ERJ3GSY0R00V philips thermistor 250 ohm RK73ZETTP 600S0R5BT250XT 600s3r3bt250xt
2007 - thermistor 100k

Abstract: 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E
Text: Connector SMA END 0.037 Connector MTA SMD R/A 2 PIN SCREW #2-56 PHILIPS PAN HEAD PCB, 30 mils thick Dk , , 30 mils thick Dk =3.48 Machined Aluminum 3W, LDMOS Transistor , plastic 26 package Phone: (800 , Connector MTA SMD R/A 2 PIN SCREW #2-56 PHILIPS PAN HEAD PCB, 30 mils thick Dk =3.48 Machined Aluminum 3W , Discussion Sirenza Microdevices' SLD-1026Z is a high performance LDMOS transistor designed for operation , %, 500V, B ATC 100B510KT500XT Connector MTA SMD R/A 2 PIN Amp 640455-2 U3, U4


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PDF AN-090 SLD-1026Z EAN-105860 thermistor 100k 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E
2005 - 600S2R7BT250XT

Abstract: ERT-J1VV104J transistor smd 303 IC 2030 schematic diagram 850 SMD Rework Station thermistor 100k sld1026 smd transistor r32 600L270 r5 t85
Text: high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent , power transistor is fabricated using Sirenza's latest, high performance LDMOS II process. This product , package. Bus them to pin 2 as shown in the app circuit. Transistor RF input and gate bias voltage. The , app circuit. Transistor RF output and drain bias voltage. Typical voltage 28V. These pins are DC , applied to the transistor unless it is properly terminated on both input and output. Note 2: The


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PDF SLD-1026Z SLD-1026Z 2700MHz. SOF-26 AN-090, EDS-104157 600S2R7BT250XT ERT-J1VV104J transistor smd 303 IC 2030 schematic diagram 850 SMD Rework Station thermistor 100k sld1026 smd transistor r32 600L270 r5 t85
1998 - transistor SMD DK

Abstract: K6264K BA582 BC848 SW02
Text: un-symmetric SA driver output was worked out. The common transistor IF driver is used here to provide real , level selects D/K norm when the transistor BC848 connects pin10 to pin2, which is grounded. The input , (collector emitter) capacitance of transistor BC848, shut off in M/N mode, its value being about 4pF. We , filters in- or outputpins. A separation of 55dB MN / 57dB DK was measured for an open layout with SAW , select can be seen. SMD components are perfect for a layout, with limited space below the SAW filter


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PDF K6264K K6264K DIP10K K6264K; transistor SMD DK BA582 BC848 SW02
varistor 593 ph 275v

Abstract: varistor 275 593 ph S20 K275 varistor ABB inverter motor fault code
Text: No file text available


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PDF 1271290000/01/2011/SMMD varistor 593 ph 275v varistor 275 593 ph S20 K275 varistor ABB inverter motor fault code
1998 - 2kW flyback PFC

Abstract: transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
Text: Email: ronald.hoeijenbos@p1.zom1. siemens.scn.400net.nl DK Siemens A/S Borupvang 3 DK -2750 Ballerup (+45) 4477-4477 Fax (+45) 4477- 4017 Email: bjarne.jensen@div2. cph1.siemens.scn.400net. dk E , (with fewer/smaller power transistor packages). Cool MOSTM offers you the choice to get a head start , transistor under all conditions. 600V Cool MOS Products RDS(ON) of a 600V MOSFET Cool MosTM in , all others behind. The Cool MOSTM transistor is based on the MOSFET principle, but it contains some


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PDF D-90439 D-70499 D-81679 B-1060 N60S5 O-220 OT-223 2kW flyback PFC transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
2005 - 600S4R7BT250

Abstract: ecj2yb1h104k
Text: high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent , transistor is fabricated using Sirenza's latest, high performance LDMOS II process. This product features a , internal to the package. Bus them to pin 2 as shown in the app circuit. Transistor RF input and gate bias , in the app circuit. Transistor RF output and drain bias voltage. Typical voltage 28V. These pins are , . Bias voltages should never be applied to the transistor unless it is properly terminated on both input


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PDF SLD-1026Z SLD-1026Z 2700MHz. ERJ-3EKF3240V EVM-2WSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V 600S4R7BT250 ecj2yb1h104k
transistor BC 339

Abstract: marking code 4D 301 marking code PNP transistor low noise transistor bc 234 transistor BC 536 SOT23 NPN marking 4d marking 4d npn l43 transistor
Text: DISCRETE SEMICONDUCTORS BC859; BC860 PNP general purpose transistor Product specification , PHILIPS PHILIPS Philips Semiconductors Product specification PNP general purpose transistor , ent. 3 DESCRIPTION PNP transistor in a S O T23 plastic package. NPN com plem ents: BC849 and , specification PNP general purpose transistor LIMITING VALUES In accordance with the A bsolute M axim um , 16 3 Philips Semiconductors Product specification PNP general purpose transistor


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PDF BC859; BC860 BC860 BC849 BC850. BC859 B0859A BC859B transistor BC 339 marking code 4D 301 marking code PNP transistor low noise transistor bc 234 transistor BC 536 SOT23 NPN marking 4d marking 4d npn l43 transistor
Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BLV2347 UHF power transistor Objective specification File under , Semiconductors Objective specification UHF power transistor BLV2347 FEATURES PINNING - SOT468A , NPN silicon planar UHF power transistor in a 2-lead AIN SOT468A flange package with a ceramic cap , 25 °C Philips Semiconductors Objective specification UHF power transistor BLV2347 , gain V ce = 26 V; lc = 4 A 45 - 110 Cc collector capacitance V qb = 26 V; lE = ie


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PDF BLV2347 SC08b OT468A SCA55 i27067/oo/oi/P
2P transistor

Abstract: l43 transistor
Text: DISCRETE SEMICONDUCTORS a ffi SHEET 2PC4617J NPN general purpose transistor P relim inary , Preliminary specification NPN general purpose transistor FEATURES · Power dissipation com parable to SO , telecom and m ultim edia. _ ! 3 DESCRIPTION NPN transistor encapsulated in an ultra small , specification NPN general purpose transistor LIMITING VALUES In accordance with the A bsolute M axim um , ICBO PARAMETER collector cut-off current CONDITIONS Ie = 0; V qb = 30 V lE = 0; V CB = 30 V; T


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PDF 2PC4617J 2PC4617J SC-89 SCA60 115104/00/01/pp8 2P transistor l43 transistor
2P transistor

Abstract: l43 transistor
Text: DISCRETE SEMICONDUCTORS a ffi S H E E T 2PA1774J PNP general purpose transistor P relim , Semiconductors Preliminary specification PNP general purpose transistor FEATURES · Power dissipation com , telecom and m ultim edia. n3 3 DESCRIPTION PNP transistor encapsulated in an ultra small plastic , P relim inary specification PNP general purpose transistor LIMITING VALUES In accordance with , CONDITIONS lE = 0; V qb = - 30 V lE = 0; V CB = -3 0 V; Tj = 150 °C - MIN. MAX. -1 0 0 -5 -1 0 0


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PDF 2PA1774J 2PA1774J SC-89 SCA60 115104/00/01/pp8 2P transistor l43 transistor
1998 - K9453M

Abstract: K9650M SAW FILTER K9650 saw filter if video BA582 BC848 SW01 8 pin SMD s3 dk transistor transistor and diode tester
Text: . A proposal for an unsymmetric SAW driver output was worked out. The common transistor IF driver is , more practical to design in. A transistor , one diode and two resistors can be saved additionally , selects L' norm when the transistor BC848 connects pin2 to pin3, which is grounded. The input capacitance , using SAW K9650M is shown on page 6. Here, the details of the norm select can be seen. SMD components , ), a change of the choke to compensate it is not necessary. However, once a different transistor type


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PDF K9650 K9650M K9650M K9650M, 40MHz: 90MHz: 47MHz: K9453M SAW FILTER K9650 saw filter if video BA582 BC848 SW01 8 pin SMD s3 dk transistor transistor and diode tester
2003 - MSP6S26

Abstract: AN893 MSC6S26 pic16F684A MICROCHIP AN893 schematic diagram 48v dc motor driver circuit AN-893 pic16f684 pwm based bidirectional dc motor speed sensorless bdc motor speed control
Text: power transistor 's switching speed. The human ear can detect frequencies ranging from 20 Hz-20 kHz , Driver P1C FET Driver FET Driver Logic `0' QD QB P1D CCP1CON<3:0> = `1100' , Driver Logic `1' QB QD Logic `0' CCP1CON<3:0> = `1100' CCP1CON<7:6> = `11' 2003 , I P1B Logic `0' VBACKEMF BDC FET Driver P1C P1D FET Driver Logic `0' QB , FET Driver P1C FET Driver Logic `0' QD QB VACTUAL 0.1 current sensing resistor


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PDF AN893 PIC16F684 PIC16F684 DK-2750 D-85737 NL-5152 MSP6S26 AN893 MSC6S26 pic16F684A MICROCHIP AN893 schematic diagram 48v dc motor driver circuit AN-893 pwm based bidirectional dc motor speed sensorless bdc motor speed control
2008 - DIODE SMD v105

Abstract: smd transistor 2fx stk 442 -130 2310 fx transistor SMD DK QM 2fx TRANSISTOR smd transistor 2FX ATA5724 STK 432 4 MHz crystal KDS 2K
Text: List ATA5723/24/28- DK V1.0 Housing Manufacture/ Distributor ATA5723 SS020 Atmel , Material/Series SMD 0603 x x 0603 0603 5% SMD 0603 10k C2 SMD SMD 5% SMD 0603 1.8k 5% SMD 0603 n.m. Murata® C6, C12, C13 3 x x x 10 nF , x x x Pin connector - black 240-333 PCB 1 ATA5723/24/28- DK V1.0 NoSAW FR4 , Receivers using ATA5723/24/28- DK and RF Design Kit Software One of the benefits of using the receiver


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PDF ATA5723/ATA5724/ATA5728 ATA5723, ATA5724, ATA5728 ATA5743 ATA5760. ATA5743. 9118B DIODE SMD v105 smd transistor 2fx stk 442 -130 2310 fx transistor SMD DK QM 2fx TRANSISTOR smd transistor 2FX ATA5724 STK 432 4 MHz crystal KDS 2K
AOI21

Abstract: OAI21 UNITED TECHNOLOGIES MICROELECTRONICS CENTER nand gate layout TTL XOR2 operation of sr latch using nor gates UTB Series transistor QB three input OR gate United Technologies Microelectronics
Text: functions is accomplished by using a gate isolation technique, where a P-channel transistor is tied to VDD and an N-channel transistor is tied to Vss. Thus, only the exact number of transistor pairs are used to implement any logic function. No transistor pairs are lost due to suboptimal block structures. The overhead required to perform the gate isolation is greatly offset by the increased number of transistor , Microelectronics Center. Inc. This Material Copyrighted By Its Respective Manufacturer PART TRANSISTOR EQUIVALENT


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PDF 150mA 617-890-UTMC UTB-3-11 -86-DS AOI21 OAI21 UNITED TECHNOLOGIES MICROELECTRONICS CENTER nand gate layout TTL XOR2 operation of sr latch using nor gates UTB Series transistor QB three input OR gate United Technologies Microelectronics
1998 - SMD DIODE gp 817

Abstract: smd resistor philips 1206 smd capacitor philips transistor SMD DK philips ceramic capacitors smd SMD Transistor 6f philips smd 1206 resistor SMD TRANSISTOR L6 philips smd 1206 BEP SMD ZENER
Text: DESCRIPTION Semiconductors D1 BZX84, C6V2 SMD Zener Diode T1 MJD31C SMD NPN Transistor T2 BC846C SMC NPN Transistor R1 1.1 k SMD resistor Philips 1206 R2 4.3 k SMD , . The amplifier is equipped with the Philips BLV2044, a NPN silicon planar transistor in a 2-lead SOT437 , profile. When operated from a 26 V supply in class-AB mode the transistor has a minimum power gain of 8 , of the transistor are designed for an optimum gain flatness and efficiency over the PCS band. Bypass


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PDF BLV2044 AN98022 BLV2044, OT437 SCA57 SMD DIODE gp 817 smd resistor philips 1206 smd capacitor philips transistor SMD DK philips ceramic capacitors smd SMD Transistor 6f philips smd 1206 resistor SMD TRANSISTOR L6 philips smd 1206 BEP SMD ZENER
1998 - 358 SMD transistor

Abstract: smd capacitor philips philips ceramic capacitors smd smd resistor philips 1206 capacitor SMD PHILIPS CERAMIC CAPACITOR SMD PHILIPS transistor SMD DK philips smd 1206 resistor AN98026 SMD Transistor 6f
Text: SMD NPN Transistor T2 BC846C SMC NPN Transistor Table 3 Resistors COMPONENTS VALUES , . The amplifier is equipped with the Philips BLV2045, a NPN silicon planar transistor in a 2-lead SOT390 , profile. When operated from a 26 V supply in class AB mode the transistor has a minimum power gain of 8 , input- and output of the transistor are designed for an optimum gain flatness and efficiency over the , tantal SMD capacitor C3, C4 multilayer ceramic chip capacitor; note 2 20 pF C5 multilayer


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PDF BLV2045 AN98023 BLV2045, OT390 SCA57 358 SMD transistor smd capacitor philips philips ceramic capacitors smd smd resistor philips 1206 capacitor SMD PHILIPS CERAMIC CAPACITOR SMD PHILIPS transistor SMD DK philips smd 1206 resistor AN98026 SMD Transistor 6f
1998 - smd-transistor DATA BOOK

Abstract: SMD Transistor rt/duroid 6006 TRANSISTOR SMD catalog transistor SMD DK Philips 2222-581 smd-transistor -1.am Duroid 6006 SMD Transistor 6f smd transistor l6
Text: application note contains information on a 4 W class-AB amplifier based on the SMD transistor BLV2042. The , 1990 MHz. The next sections contain information on the transistor , the amplifier construction and the typical RF performance obtained. 2 TRANSISTOR BACKGROUND The BLV2042 is an NPN bipolar RF power transistor in an 8-lead SMD package called SOT409. The package contains an Aluminium Nitride (AlN) substrate , INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER DESCRIPTION 4 AMPLIFIER PERFORMANCE 5


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PDF BLV2042 AN98018 BLV2042. 199lding SCA57 smd-transistor DATA BOOK SMD Transistor rt/duroid 6006 TRANSISTOR SMD catalog transistor SMD DK Philips 2222-581 smd-transistor -1.am Duroid 6006 SMD Transistor 6f smd transistor l6
2000 - STR 6750

Abstract: 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout
Text: .5 4.1.3 PWM Converter (Two Transistor Forward , converter operates at 200kHz - hard switching two transistor forward converter operates at 200kHz - , SMPS. It carries the power semiconductors (in SMD lead frame technology) and the passive devices of , Transistor Forward) The PWM converter is a two transistor forward topology. The operating frequency of 200 , power transistor (Q2A) of the PWM stage are driven by discrete high speed, high current driver stages


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PDF AN-CoolMOS-06 TDA16888, Room14J1 Room1101 STR 6750 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout
1998 - MGH80

Abstract: TRANSISTOR SMD catalog AN98017 AN98020 AN98026 BLV909 SMD TRANSISTOR
Text: application note contains information on a 9 W class-AB amplifier based on the SMD transistor BLV909. The , . The next sections contain information on the transistor , the amplifier construction and the typical RF performance obtained. 2 TRANSISTOR BACKGROUND The BLV909 is an NPN bipolar RF power transistor in an 8-lead SMD package called SOT409. The package contains an Aluminium Nitride (AIN) substrate , INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER BACKGROUND 4 AMPLIFIER PERFORMANCE 5


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PDF BLV909 AN98020 BLV909. SCA57 MGH80 TRANSISTOR SMD catalog AN98017 AN98020 AN98026 SMD TRANSISTOR
1998 - l14 254

Abstract: AN98017 transistor 935 SMD AL SMD transistor 821 ceramic capacitor Philips 2222-581 TRANSISTOR SMD catalog AN98019 AN98026 BLV904
Text: INTRODUCTION This application note contains information on a 5 W class-AB amplifier based on the SMD transistor BLV904. The amplifier described can be used for driver stages in cellular radio base stations in the GSM band 935 - 960 MHz. The next chapters contain information on the transistor , the amplifier construction and the typical RF performance obtained. TRANSISTOR BACKGROUND The BLV904 is an NPN bipolar RF power transistor in an 8-lead SMD package called SOT409. The package contains an Aluminium Nitride (AIN


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PDF BLV904 AN98019 BLV904 BLV904. OT409. SCA57 l14 254 AN98017 transistor 935 SMD AL SMD transistor 821 ceramic capacitor Philips 2222-581 TRANSISTOR SMD catalog AN98019 AN98026
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