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LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor SMD 12W Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - AIRBORNE DME

Abstract:
Text: transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The high voltage MOSFET , Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty ! For Airborne DME Applications ! ! ! ! ! ! ! , -! 3! 3! 3! 3! RZ! RZ! a! F! Typical performance at 1025MHz with an input power of 12W , -01-DS18A 07/15/2010 2 HVV1012-550 High Voltage, High Ruggedness L-Band High Power Pulsed Transistor , TCASE = 25°C 2) All parameters measured under pulsed conditions at 12W input power measured at the 10


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PDF HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
transistor SMD 12W

Abstract:
Text: an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from , Voltage, H igh Ruggedness L-Band High Power Pulsed Transistor 1030/1090 MHz, 50µs Pulse, 2% Duty ! , ! Typical performance at 1030 MHz at an input power of 12W . ! 8(F! Transistor 1030/1090 MHz, 50µs Pulse, 2% Duty ! , parameters measured under pulsed conditions at 12W input power measured at the 10% point of the pulse with


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PDF HVV1011-600 1030MHz 1090MHz. transistor SMD 12W transistor SMD 12W MOSFET transistor JE 1090 smd transistor code 12w
2000 - transistor SMD 12W MOSFET

Abstract:
Text: power is up to 12W shared to both outputs. One typical application is shown in figure 1 below. Figure 1: Principle application of the HV-Bias circuit 2 Features The 12W HV-BIAS demonstration board , to 800VDC a transistor with 1200V to 1500V breakdown capability is necessary. This makes the design , used together with a further 600V or 800V CoolMOSTM transistor . The user of this module is able to , transistor is achieved. Technical specification: Input Voltage Range: 1201) VDC . 800VDC Total


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PDF ICE2B265 SPA02N80 ICE2B265 transistor SMD 12W MOSFET SMD Code 12W SOT23 smd transistor code 12w transistor SMD 12W ICE2B265 Application Note HV cascode smps SPA02N60-C3 ICE2B265 equivalent smd transistor 12W 52
2000 - transistor SMD 12W MOSFET

Abstract:
Text: 12W shared to both outputs. One typical application is shown in figure 1 below. Figure 1: Principle application of the HV-Bias circuit 2 Features The 12W HV -BIAS demonstration board shows a , transistor with 1200V to 1500V breakdown capability is necessary. This makes the design expensive and , together with a further 600V or 800V CoolMOSTM transistor . The user of this module is able to supply , CoolMOSTM transistor is achieved. Technical specification: 1) Input Voltage Range: 120 VDC .


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PDF ICE2B265 SPA02N80 ICE1B265 transistor SMD 12W MOSFET transistor SMD 12W SMD Code 12W SOT23 ICE2B265 Application Note AN-EvalMF2-ICE2A0565Z-1 ICE1B265 smd transistor code 12w HV cascode smps smd transistor 12w
2013 - smd transistor 12W 13

Abstract:
Text: Primary Inductance Compensation The ACT365 is optimized for compact size 6W to 12W adapter , and CEC Average Efficiency Standards • Dedicate Adapter Application from 6W to 12W , ACT365SH-T (SOP-8) -1- 85-265VAC TYPICAL APPLICATION 5V/2.1A Po MAX 12W www.active-semi.com , . Innovative PowerTM DESCRIPTION Switch Drive. Switch node for the external NPN transistor . Connect this , . Ground. Base Drive. Base driver for the external NPN transistor . Power Supply. This pin provides bias


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PDF ACT365 10-Jan-13 ACT365 150mW smd transistor 12W 13 transistor SMD 12W MOSFET smd transistor 12W 3 pins transistor SMD 12W D13005 E D13005 D13005 transistor smd transistor 12W 55
2007 - Not Available

Abstract:
Text: PH1214-12M Radar Pulsed Power Transistor 12W , 1.2-1.4 GHz, 150µs Pulse, 10% Duty Features · · · , -12M Radar Pulsed Power Transistor 12W , 1.2-1.4 GHz, 150µs Pulse, 10% Duty M/A-COM Products Released, 30 May , -12M Radar Pulsed Power Transistor 12W , 1.2-1.4 GHz, 150µs Pulse, 10% Duty Test Fixture Circuit Dimensions , 40V Vcc = 28V, Pout = 12W Vcc = 28V, Pout = 12W Vcc = 28V, Pout = 12W Vcc = 28V, Pout = 12W Vcc = 28V, Pout = 12W Vcc = 28V, Pout = 12W Vcc = 28V, Pout = 12W C RL VSWR-T VSWR-S 1 ADVANCED: Data


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PDF PH1214-12M
2009 - transistor 12w

Abstract:
Text: PH1214-12M Radar Pulsed Power Transistor 12W , 1.2-1.4 GHz, 150µs Pulse, 10% Duty M/A-COM , contained herein without notice. PH1214-12M Radar Pulsed Power Transistor 12W , 1.2-1.4 GHz, 150µs , ) or information contained herein without notice. PH1214-12M Radar Pulsed Power Transistor 12W , Thermal Resistance Vcc = 28V, Pout = 12W F = 1.2, 1.3, 1.4 GHz RTH(JC) - 3.7 °C/W Output Power Vcc = 28V, Pout = 12W F = 1.2, 1.3, 1.4 GHz PIN - 1.7 W Power Gain


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PDF PH1214-12M transistor 12w PH1214-12M
2012 - D13005

Abstract:
Text: Output Cord Resistance Compensation The ACT337 is optimized for compact size 7W to 12W charger , €¢ Adjustable Power from 7W to 12W • Minimum External Components • SOP-8 Package APPLICATIONS • RCC , DESCRIPTION 1 SW Switch Drive. Switch node for the external NPN transistor . Connect this pin to the , transistor . -2- www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT337 Rev 2, 14 , internal compensation network, modulates the external NPN transistor peak current at CS pin with current


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PDF ACT337 14-Nov-12 ACT337 D13005 transistor BD 222 SMD transistor SMD 12W D13005 E D13005 transistor transformer winding formula 220v Ac to 12v Dc transistor SMD 12W MOSFET
Not Available

Abstract:
Text: ^24^62^ DD1 7 2 6 3 547 ■MITSUBISHI RFPOWER MODULE M57789 889-915MHz, 12.5V, 12W , 2.8 Vcci=12.5V, Vcc2=15. 2V, Vbb=8V P o = 12W (Pin : controlled), Zg = 50Q Load VSWR=20:1(Al1 , RF POWER MODULE M57789 889-915MHz, 12.5V, 12W , FM MOBILE RADIO TYPICAL PERFORMANCE DATA O UTPUT , POWER MODULE 31T M57789 889-915MHz, 12.5V, 12W , FM MOBILE RADIO DESIGN CONSIDERATION OF HEAT , transistor R th (i-o i =20°C/W (Typ.) b) Second stage transistor Rth(j-c )2 = 17.5°C/W (Typ.) c) Third


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PDF M57789 889-915MHz,
2005 - transistor SMD 12W

Abstract:
Text: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz 10:1 , 3224W 10K Zener Diode 5.1V 500mW SOD80 RF LDMOS Transistor 12V 15W TEFLON-GLASS Er = 2.55, THK = 0.762mm , -915-12W Obsolete Product Page/ Datasheet Description 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY Transistors|Transistors, Radio Frequency|LDMOS 28/32 V 900 MHz Applications - SMD Plastic Search time


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PDF DB-915-12W PD55015S DB-915-12W transistor SMD 12W smd transistor code 12w smd transistor 12W 55 smd 501 transistor 12W smd transistor smd transistor 12W VJ1206Y104KXAT smd transistor 12W 74 SMD Code 12W Tekelec TA
2011 - MOSFET mark J7

Abstract:
Text: Transistor , 175MHz, 12W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 DESCRIPTION RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. 6.0+/-0.15 , Transistor , 175MHz, 12W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE *1:The , ) > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W TYPICAL CHARACTERISTICS Pin-Po , (Discrete) > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W ATTENTION: 1


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) RD12MVS1-101 Oct2011 MOSFET mark J7 043mm 78s12 RD12MVS transistor t06 19
2007 - Not Available

Abstract:
Text: PH1214-6M Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty Features · · · · · · · · · NPN silicon microwave power transistors Common base configuration Broadband Class C , , Pin = 1.2W Vcc = 28V, Pin = 1.2W Vcc = 28V, Pin = 1.2W Vcc = 28V, Pin = 1.2W Vcc = 28V, Pin = 1.2W Vcc = 28V, Pin = 1.2W Vcc = 28V, Pin = 1.2W C RL VSWR-T VSWR-S 1 ADVANCED: Data Sheets contain , Transistor 6W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty RF Test Fixture Impedance F (GHz) 1.2 1.3 1.4 M/A-COM


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PDF PH1214-6M
Not Available

Abstract:
Text: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W , FM MOBILE RADIO ® Pin : R F IN , =15. 2V V b=8V , , b No degradation Po = 12W (Pin : controlled), Z g = 50Q or destroy Load VSW R , MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W , FM MOBILE RADIO TYPICAL PERFORMANCE DATA , MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W , FM MOBILE RADIO Please refer to the , and case are shown in the followings. a) First stage transistor R th(j-c)i =20°C/W (Typ.) b


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PDF M57789 889-915MHz,
2004 - a 1757 transistor

Abstract:
Text: PRECAUTIONS Silicon MOSFET Power Transistor , 175MHz, 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6 , RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor , 175MHz, 12W TYPICAL , PRECAUTIONS Silicon MOSFET Power Transistor , 175MHz, 12W TEST CIRCUIT (f=175MHz) Vdd Vgg C2 C3 , DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor , 175MHz, 12W , SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor , 175MHz, 12W


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor MOSFET mark J7 GRM40 transistor 1758
2011 - transistor+SMD+12W+MOSFET

Abstract:
Text: Transistor , 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0 , Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W ELECTRICAL CHARACTERISTICS SYMBOL , ) > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W TYPICAL CHARACTERISTICS , Power MOS FET (Discrete) > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W , ) > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W TEST CIRCUIT (f


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz) transistor+SMD+12W+MOSFET
2009 - PH1214-6M

Abstract:
Text: PH1214-6M Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty M/A-COM , Thermal Resistance Vcc = 28V, Pin = 1.2W F = 1.2, 1.3, 1.4 GHz RTH(JC) - 5.8 °C/W Output Power Vcc = 28V, Pin = 1.2W F = 1.2, 1.3, 1.4 GHz POUT 6.0 - W Power Gain Vcc = 28V, Pin = 1.2W F = 1.2, 1.3, 1.4 GHz GP 7.0 - dB Collector Efficiency Vcc = 28V, Pin = 1.2W F = 1.2, 1.3, 1.4 GHz C 45 - % Input Return Loss Vcc = 28V


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PDF PH1214-6M PH1214-6M transistor 6w 3 w RF POWER TRANSISTOR NPN 5.8 ghz
trw RF POWER TRANSISTOR

Abstract:
Text: better than 45%. The amplifier is build up with three bipolar transistors, the broadband transistor , : output power 1.2W , supply voltage 6V, and frequency 900MHz. If more or less output power is needed some , output power. The amplifier has about 30dB gain at 1.2W output power. Since the amplifier is build up , 4.4:1 Vs=8V, Pout=1.5W max. Harmonic content -39 dBc P« = 1.2W Dynamic range P„= 0 - 30.8 dBm Vc , transistor is not loaded with the optimum load for maximum gain, but with 500. The transformation from the


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PDF BFG540/x BLT80 BLT81. BFG540, BLT81 900MHz. BLT81 trw RF POWER TRANSISTOR bfg540 s-parameter trw rf transistor trw rf semiconductors npn power amplifier circuit BFG540 BC817 BC807
2009 - HVV1012-550

Abstract:
Text: HVV1012-550 (Preliminary Datasheet) L-Band High Power Pulsed Transistor 10µs Pulse Width, 1% Duty , voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at the , =0V,VDS=50V <300 µA IGSS Gate Leakage Current VGS=5V,VDS=0V <10 µA GP1 Power Gain Pin= 12W , f=1025MHz, 1150 MHz 17 dB IRL1 Input Return Loss Pin= 12W , f=1025MHz, 1150 MHz -11 dB Pout1 Power Ouput Pin= 12W , f=1025MHz, 1150 MHz 640 W D1 Drain Efficiency Pin= 12W , f=1025MHz, 1150 MHz 47 % PD1


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PDF HVV1012-550 HVV1012-550 429-HVVi EG-01-PO18X2 4884 12W 01 TRANSISTOR hvvi
2007 - Not Available

Abstract:
Text: PH1214-55EL Radar Pulsed Power Transistor 55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty Features · · · · · · · · · NPN silicon microwave power transistors Common base configuration Broadband Class C , 28V Vcc = 28V, Pin = 12W Vcc = 28V, Pin = 12W Vcc = 28V, Pin = 12W Vcc = 28V, Pin = 12W Vcc = 28V, Pin = 12W Vcc = 28V, Pin = 12W Vcc = 28V, Pin = 12W C RL VSWR-T VSWR-S 1 ADVANCED: Data Sheets , Power Transistor 55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty RF Test Fixture Impedance F (GHz) 1.2 1.3 1.4


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PDF PH1214-55EL
2009 - 55el

Abstract:
Text: PH1214-55EL Radar Pulsed Power Transistor 55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty M/A-COM , Resistance Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz RTH(JC) - 0.8 °C/W Output Power Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz POUT 55 - W Power Gain Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz GP 6.6 - dB Collector Efficiency Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz C 50 - % Input Return Loss Vcc = 28V, Pin = 12W F =


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PDF PH1214-55EL 55el 3 w RF POWER TRANSISTOR NPN 5.8 ghz 12w 66 12w 66 transistor PH1214-55EL
P04 transistor

Abstract:
Text: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W , FM MOBILE RADIO OUTLINE DRAWING , Input VSWR 2.8 - - Load VSWR tolerance Vcci=12. 5V, Vcc2=15. 2V, Vbb=8V Po = 12W (Pin : controlled , POWER MODULE M57789 889-915MHz, 12.5V, 12W , FM MOBILE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER , case are shown in the followings. a) First stage transistor Rth(i-c)i =20°C/W (Typ.) b) Second stage transistor Rth(j-c)2 = 17.5°C/W (Typ.) c) Third stage transistor Rth(j-c)3 = 15°C/W (Typ.) d


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PDF M57789 889-915MHz, P04 transistor transistor p04 12W 02 transistor M57789 transistor po3 transistor zg 12W 01 TRANSISTOR rf transistor s parameters transistor TC 10
2009 - HVV1011-600

Abstract:
Text: HVV1011-600 (Preliminary Datasheet) L-Band High Power Pulsed Transistor 50µs Pulse Width, 2% Duty , -600 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications , VGS=0V,ID=10mA VGS=0V,VDS=50V VGS=5V,VDS=0V PIN= 12W ,F= 1090 MHz PIN= 12W ,F= 1090 MHz PIN= 12W ,F= 1090 MHz PIN= 12W ,F= 1090 MHz PIN= 12W ,F= 1090 MHz Typ 102 <300 <1 17.3 645 15 53 <0.4 , ) L-Band High Power Pulsed Transistor 50µs Pulse Width, 2% Duty Cycle For 1030-1090MHz IFF/TPR/TCAS


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PDF HVV1011-600 1030-1090MHz HVV1011-600 HV800 MIL-STD-883, EG-01-PO15X4 hvvi 1090MHZ
2008 - Not Available

Abstract:
Text: L-Band Avionics Transistor The high power pulsed avionics transistor part number IB1012S150 is designed , and to ease the implementation of external matching circuitry. The new generation bipolar transistor , =50V, Pulse format 10µs, 1%, TF=25±5°C, PIN= 12W , NC=50% Screen 'BD' = parameter qualified By Design , dB Test Conditions VCC=50V, PIN= 12W , Pulse = Note 2, TF=25±5°C, F=F1. PIN(MAX) - 16 W VCC=50V, Pulse = Note 2, TF=25±5°C, F=F1. GP 11 12.5 dB VCC=50V, PIN= 12W


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PDF IB1012S150 IB1012S150 IB1012S150-REV-NC-DS-REV-NC
2010 - mosfet marking 12W

Abstract:
Text: PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor , 175MHz, 12W OUTLINE DRAWING , OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W , Transistor , 175MHz, 12W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=175M Hz 14 80 30 60 , Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W RD12MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id , , Silicon MOSFET Power Transistor , 175MHz, 12W ATTENTION: 1.High Temperature ; This product might have a


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) mosfet marking 12W 12w marking GRM40 T112
2010 - 78s12

Abstract:
Text: RD12MVS1 (0.22) (0.22) RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor , 175MHz, 12W , On PCB(*1) with Heat-sink Silicon MOSFET Power Transistor , 175MHz, 12W DRAIN DISSIPATION VS. AM , =175MHz) Vgg Silicon MOSFET Power Transistor , 175MHz, 12W C1 W 47pF RF-in 35mm 3mm L1 10.8nH W , Power Transistor , 175MHz, 12W ATTENTION: 1.High Temperature ; This product might have a heat generation , Power Transistor , 175MHz, 12W Keep safety first in your circuit designs ! Mitsubishi Electric


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) 78s12 RD12MVS1-101
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