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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver
LT1160IN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14, 0.300 INCH, PLASTIC, DIP-14, MOSFET Driver
LT1158CS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LTC1177CSW Linear Technology IC BUF OR INV BASED MOSFET DRIVER, PDSO18, 0.300 INCH, PLASTIC, SO-18, MOSFET Driver
LTC4444-5IMS8E#PBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver

transistor SMD 12W MOSFET Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - AIRBORNE DME

Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
Text: cycle = 1%. DESCRIPTION The high power HVV1012-550 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The high voltage MOSFET , FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power , Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty ! For Airborne DME Applications ! ! ! ! ! ! ! , -! 3! 3! 3! 3! RZ! RZ! a! F! Typical performance at 1025MHz with an input power of 12W


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PDF HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
2000 - transistor SMD 12W MOSFET

Abstract: SMD Code 12W SOT23 smd transistor code 12w transistor SMD 12W ICE2B265 ICE2B265 Application Note HV cascode smps SPA02N60-C3 ICE2B265 equivalent smd transistor 12W 52
Text: power is up to 12W shared to both outputs. One typical application is shown in figure 1 below. Figure 1: Principle application of the HV-Bias circuit 2 Features The 12W HV-BIAS demonstration board , to 800VDC a transistor with 1200V to 1500V breakdown capability is necessary. This makes the design , used together with a further 600V or 800V CoolMOSTM transistor . The user of this module is able to , transistor is achieved. Technical specification: Input Voltage Range: 1201) VDC . 800VDC Total


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PDF ICE2B265 SPA02N80 ICE2B265 transistor SMD 12W MOSFET SMD Code 12W SOT23 smd transistor code 12w transistor SMD 12W ICE2B265 Application Note HV cascode smps SPA02N60-C3 ICE2B265 equivalent smd transistor 12W 52
2000 - transistor SMD 12W MOSFET

Abstract: transistor SMD 12W SMD Code 12W SOT23 ICE2B265 Application Note AN-EvalMF2-ICE2A0565Z-1 ICE1B265 smd transistor code 12w HV cascode smps ICE2B265 smd transistor 12w
Text: 12W shared to both outputs. One typical application is shown in figure 1 below. Figure 1: Principle application of the HV-Bias circuit 2 Features The 12W HV -BIAS demonstration board shows a , transistor with 1200V to 1500V breakdown capability is necessary. This makes the design expensive and , together with a further 600V or 800V CoolMOSTM transistor . The user of this module is able to supply , CoolMOSTM transistor is achieved. Technical specification: 1) Input Voltage Range: 120 VDC .


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PDF ICE2B265 SPA02N80 ICE1B265 transistor SMD 12W MOSFET transistor SMD 12W SMD Code 12W SOT23 ICE2B265 Application Note AN-EvalMF2-ICE2A0565Z-1 ICE1B265 smd transistor code 12w HV cascode smps smd transistor 12w
transistor SMD 12W MOSFET

Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
Text: an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from , H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain , Voltage, H igh Ruggedness L-Band High Power Pulsed Transistor 1030/1090 MHz, 50µs Pulse, 2% Duty ! , ! Typical performance at 1030 MHz at an input power of 12W . ! 8(F! Transistor 1030/1090 MHz, 50µs Pulse, 2% Duty !


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PDF HVV1011-600 1030MHz 1090MHz. transistor SMD 12W MOSFET transistor SMD 12W transistor JE 1090 smd transistor code 12w
2011 - MOSFET mark J7

Abstract: 78s12 RD12MVS 043mm transistor t06 19
Text: ) > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W TYPICAL CHARACTERISTICS Pin-Po , (Discrete) > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W ATTENTION: 1 , Transistor , 175MHz, 12W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 DESCRIPTION RD12MVS1 is a MOS , RF Power MOS FET (Discrete) > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz , Transistor , 175MHz, 12W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE *1:The


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) RD12MVS1-101 Oct2011 MOSFET mark J7 78s12 RD12MVS 043mm transistor t06 19
2011 - transistor+SMD+12W+MOSFET

Abstract: No abstract text available
Text: Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W ELECTRICAL CHARACTERISTICS SYMBOL , ) > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W TYPICAL CHARACTERISTICS , Power MOS FET (Discrete) > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W , ) > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W TEST CIRCUIT (f , MOS FET (Discrete) > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz) transistor+SMD+12W+MOSFET
2004 - a 1757 transistor

Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758
Text: PRECAUTIONS Silicon MOSFET Power Transistor , 175MHz, 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6 , RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor , 175MHz, 12W TYPICAL , PRECAUTIONS Silicon MOSFET Power Transistor , 175MHz, 12W TEST CIRCUIT (f=175MHz) Vdd Vgg C2 C3 , DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor , 175MHz, 12W , SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor , 175MHz, 12W


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor MOSFET mark J7 GRM40 transistor 1758
2010 - 78s12

Abstract: RD12MVS1-101
Text: RD12MVS1 (0.22) (0.22) RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor , 175MHz, 12W , On PCB(*1) with Heat-sink Silicon MOSFET Power Transistor , 175MHz, 12W DRAIN DISSIPATION VS. AM , =175MHz) Vgg Silicon MOSFET Power Transistor , 175MHz, 12W C1 W 47pF RF-in 35mm 3mm L1 10.8nH W , Compliance, TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=175M Hz Silicon MOSFET Power Transistor , DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) 78s12 RD12MVS1-101
2010 - mosfet marking 12W

Abstract: 12w marking GRM40 RD12MVS1 T112
Text: PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor , 175MHz, 12W OUTLINE DRAWING , OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W , Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W RD12MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id , , Silicon MOSFET Power Transistor , 175MHz, 12W ATTENTION: 1.High Temperature ; This product might have a , Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W Keep safety first in your circuit designs !


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) mosfet marking 12W 12w marking GRM40 T112
2006 - a 1757 transistor

Abstract: 78s12 GRM40 RD12MVS1 T112
Text: PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor , 175MHz, 12W OUTLINE DRAWING , RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W TYPICAL CHARACTERISTICS DRAIN , RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W RD12MVS1 S-PARAMETER DATA , HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W RD12MVS1 , HANDLING PRECAUTIONS RoHS Compliance, RD12MVS1 Silicon MOSFET Power Transistor , 175MHz, 12W


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor 78s12 GRM40 T112
2013 - smd transistor 12W 13

Abstract: transistor SMD 12W MOSFET smd transistor 12W 3 pins transistor SMD 12W D13005 E D13005 D13005 transistor smd transistor 12W 55
Text: transformer’s primary winding, the NPN transistor , the ACT365 internal MOSFET and the current sense , Primary Inductance Compensation The ACT365 is optimized for compact size 6W to 12W adapter , and CEC Average Efficiency Standards • Dedicate Adapter Application from 6W to 12W , ACT365SH-T (SOP-8) -1- 85-265VAC TYPICAL APPLICATION 5V/2.1A Po MAX 12W www.active-semi.com , . Innovative PowerTM DESCRIPTION Switch Drive. Switch node for the external NPN transistor . Connect this


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PDF ACT365 10-Jan-13 ACT365 150mW smd transistor 12W 13 transistor SMD 12W MOSFET smd transistor 12W 3 pins transistor SMD 12W D13005 E D13005 D13005 transistor smd transistor 12W 55
2009 - a 1757 transistor

Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 T112 RD12MVS1 transistor t06 19 MOSFET 12W mosfet 4816 mosfet 1208
Text: PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor , 175MHz, 12W OUTLINE DRAWING , OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W , HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W TYPICAL , RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W TEST CIRCUIT (f=175MHz) Vdd Vgg , RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor , 175MHz, 12W Keep safety first in your


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor fet 4816 mosfet marking 12W transistor with marking S 0922 T112 transistor t06 19 MOSFET 12W mosfet 4816 mosfet 1208
2004 - RD12MVS1

Abstract: RD*mvs1 12w transistor
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TENTATIVE DESCRIPTION RD12MVS1 Silicon MOSFET Power Transistor ,175MHz, 12W OUTLINE DRAWING 6.0 , OBSERVE HANDLING PRECAUTIONS TENTATIVE RD12MVS1 Silicon MOSFET Power Transistor ,175MHz, 12W , transistor specifically designed for VHF RFpower amplifiers applications. 2.0+/-0.05 ·High power gain , =9.2V,Po= 12W (PinControl) f=175MHz,Idq=1A,Zg=50 Load VSWR=20:1(All Phase) MIN 1 11.5 55 LIMITS


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PDF RD12MVS1 175MHz RD12MVS1 175MHz 175MHz) RD*mvs1 12w transistor
2012 - transistor BD 222 SMD

Abstract: D13005 transistor SMD 12W D13005 transistor transistor SMD 12W MOSFET D13005 E transformer winding formula 220v Ac to 12v Dc
Text: Output Cord Resistance Compensation The ACT337 is optimized for compact size 7W to 12W charger , €¢ Adjustable Power from 7W to 12W • Minimum External Components • SOP-8 Package APPLICATIONS • RCC , DESCRIPTION 1 SW Switch Drive. Switch node for the external NPN transistor . Connect this pin to the , transistor . -2- www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT337 Rev 2, 14 , internal compensation network, modulates the external NPN transistor peak current at CS pin with current


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PDF ACT337 14-Nov-12 ACT337 transistor BD 222 SMD D13005 transistor SMD 12W D13005 transistor transistor SMD 12W MOSFET D13005 E transformer winding formula 220v Ac to 12v Dc
2007 - Not Available

Abstract: No abstract text available
Text: Part Number: Integra IDM500CW120 TECHNOLOGIES, INC. UHF-Band RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number , dual MOSFET device supplies a minimum of 120 watts of power. All devices are 100% screened for large , =2x100mA, TF=25±5°C, PIN= 12W , F=500MHz Output Power PO 120 W VDD=28V, IDQ=2x100mA, TF=25±5°C, PIN= 12W , F=500MHz Drain Efficiency (PO/ID/VDD) ND 50 % VDD=28V, IDQ=2x100mA, TF


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PDF IDM500CW120 IDM500CW120 2x100mA 200mA 1ms-10% D3913-6-10 IDM500CW120-REV-PR1-DS-REV-NC
2009 - 12-0-12 transformer used 24v dc supply

Abstract: smd transistor 6p transistor SMD 12W MOSFET TRANSISTOR SMD 2X y 12-0-12 transformer transistor SMD 12W transistor SMD 12W sot-23 16ME1800WG IC LM 258 smd SMD SJ 57a
Text: , SMD , TFP, 150V, 57A,ROHS FUJI ELECTRIC MJD31CG 1 ea Q3 TRANSISTOR , NPN, 3P , power supply. It can be used in various single transistor topologies including forward and flyback , drain source of the transistor . As the main switch is turned off, a resonance is developed between the , the drain of the transistor is clamped to VIN. VIN*NS/NP V DS V RES VOUT = VIN*D*NS/NP TX , the drain source of the transistor Coss, the winding capacitance of the transformer Ct, and the


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PDF ISL6721EVAL3Z: 8x12-STATIC-BAG AN1491 12-0-12 transformer used 24v dc supply smd transistor 6p transistor SMD 12W MOSFET TRANSISTOR SMD 2X y 12-0-12 transformer transistor SMD 12W transistor SMD 12W sot-23 16ME1800WG IC LM 258 smd SMD SJ 57a
2002 - transistor SMD 12W

Abstract: transistor SMD 12W MOSFET darfon smd transistor 12W 55 smd transistor 12W darfon inverter smd transistor 12W 3 pins 12w smd transistor darfon LCD Inverter Design pure sine wave inverter using transformer
Text: , 10V, Y5Y, SMD Semiconductors 4 Diode, BAV99L 2 Transistor , bipolar, 2N3904, SMD Integrated , supply voltage with regulated lamp current. Rated 12W power output at 12V input Open lamp regulation , . The enable will turn the chip on/off. Do not float this pin. Internally generated MOSFET gate drive , Resistors 1 4.3K, ±5%, SMD , 0805 2 1M, ±5%, SMD , 0805 1 140, ±1%, SMD , 0805 1 1K, ±5%, SMD , 0805 1 2M, ±5%, SMD , 0805 1 280K, ±5%, SMD , 0805 Capacitors 2 10nF, 50V, Y5V, SMD 8 2 1 1 1 1


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PDF MP1011A MP1011A transistor SMD 12W transistor SMD 12W MOSFET darfon smd transistor 12W 55 smd transistor 12W darfon inverter smd transistor 12W 3 pins 12w smd transistor darfon LCD Inverter Design pure sine wave inverter using transformer
2003 - H11S

Abstract: RA06H8285M RA06H8285M-01 RA06H8285M-E01 RA06H8285MB
Text: plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded , MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS , -watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors , ) 2 4 FEATURES · Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) 1 RF


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PDF RA06H8285M 820-851MHz RA06H8285MB 851-MHz H11S RA06H8285M RA06H8285M-01 RA06H8285M-E01
2004 - RA07H0608M-01

Abstract: RA07H0608M
Text: MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin , MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS , -watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 68- to 88-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors , ) 2 Gate Voltage (VGG), Power Control 3 FEATURES · Enhancement-Mode MOSFET Transistors


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PDF RA07H0608M 68-88MHz RA07H0608M 88-MHz RA07H0608M-01
2004 - H11S

Abstract: RA06H8285M RA06H8285M-01
Text: protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal , MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS , -watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors , ) 2 4 FEATURES · Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) 1 RF


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PDF RA06H8285M 820-851MHz RA06H8285MB 851-MHz H11S RA06H8285M RA06H8285M-01
2006 - mosfet marking 12W

Abstract: RA07H0608M RA07H0608M-101 transistor marking code 12W 30mW transistor
Text: flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips , transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 0.30A ­ 1.2W + , MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS , RA07H0608M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 68- to 88-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET


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PDF RA07H0608M 68-88MHz RA07H0608M 88-MHz mosfet marking 12W RA07H0608M-101 transistor marking code 12W 30mW transistor
2006 - transistor marking code H11S

Abstract: H11S RA06H8285M
Text: mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded , MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS , RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET , Input (Pin) 4 FEATURES · Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) 1


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PDF RA06H8285M 820-851MHz RA06H8285M 851-MHz transistor marking code H11S H11S
2014 - Not Available

Abstract: No abstract text available
Text: for the external MOSFET transistor . 3 GND Ground. 4 CS Current Sense Pin. Connect an , , primary winding, mosfet transistor and current sense resistor (R9). The other is secondary winding , eliminate the initial current stress on the MOSFET , a soft startup sequence is implemented in ACT520 , capacitance on MOSFET source pin is coupled by auxiliary winding and reflected on VDET pin through feedback , 265VAC, 50/60Hz 12W Output Power, PO Output Voltage, VOUTCV 5V Full Load Current, IOUTFL


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PDF ACT520 11-Dec-14 ACT520 130kHz
1997 - max1658esa

Abstract: 9-350MA
Text: MOSFET pass transistor , these devices maintain a low quiescent current from zero output current to the , /MAX1659 feature an internal P-channel MOSFET pass transistor . Using a MOSFET provides several advantages , shutdown. They are available in a special highpower ( 1.2W ), 8-pin SO package designed specifically for , o High-Power ( 1.2W ) 8-Pin SO Package o Dual Mode Operation Output: Fixed 3.3V (MAX1658) Fixed 5.0V , ) Continuous Power Dissipation (Note 1) SO (derate 14.5mW/°C above +70°C) . 1.2W


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PDF 350mA, MAX1658/MAX1659 MAX1658) MAX1659) 650mV MAX1658 490mV MAX1659. max1658esa 9-350MA
1997 - MAX1658

Abstract: MAX1658ESA MAX1659 MAX1659ESA
Text: . With their P-channel MOSFET pass transistor , these devices maintain a low quiescent current from zero , MAX1658/MAX1659 P-Channel Pass Transistor The MAX1658/MAX1659 feature an internal P-channel MOSFET pass transistor . Using a MOSFET provides several advantages over similar PNP designs, including lower , . They are available in a special highpower ( 1.2W ), 8-pin SO package designed specifically for compact , High-Power ( 1.2W ) 8-Pin SO Package o Dual Mode Operation Output: Fixed 3.3V (MAX1658) Fixed 5.0V (MAX1659


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PDF 350mA, MAX1658/MAX1659 490mV 350mA MAX1659) MAX1658) MAX1658/MAX1659 MAX1658 MAX1658ESA MAX1659 MAX1659ESA
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