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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor R1d Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
R22A

Abstract:
Text: Transistor NPN 6.4 Transistor MOSFET 6.11 Optocupler 6.11 Light Emitting Diode 9.2 Resistor film or , ,R4,R5,R6,R18, 8 R18A 4 R1A,R1B,R1C, R1D 1 Z1 1 VR1 C1,C3,C5,C6,C7,C11,C17, 10 CY1,CY2,CY3 3 , Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener 6.1 Voltage Regulator 6.4 Transistor NPN 6.4 Transistor MOSFET 6.11 Optocupler 6.11 Light Emitting Diode 9.2 Resistor film or glaze 9.2 , R1A,R1B,R1C, R1D 1 Z1 1 VR1 C1,C3,C5,C6,C7,C11,C17, 10 CY1,CY2,CY3 3 C8,C10,CX1 1 C16 1 C2 1


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PDF 110VAC ZPS60-3 R22A transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler TRANSISTOR 106 d1 R18A R22E
transistor R1d

Abstract:
Text: Transistor NPN 6.4 Transistor MOSFET 6.11 Optocupler 6.11 Light Emitting Diode 9.2 Resistor film or , ,R4,R5,R6,R18, 8 R18A 4 R1A,R1B,R1C, R1D 1 Z1 1 VR1 C1,C3,C5,C6,C7,C11,C17, 10 CY1,CY2,CY3 3 , Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener 6.1 Voltage Regulator 6.4 Transistor NPN 6.4 Transistor MOSFET 6.11 Optocupler 6.11 Light Emitting Diode 9.2 Resistor film or glaze 9.2 , R1A,R1B,R1C, R1D 1 Z1 1 VR1 C1,C3,C5,C6,C7,C11,C17, 10 CY1,CY2,CY3 3 C8,C10,CX1 1 C16 1 C2 1


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PDF 110VAC ZPS40-3 transistor R1d TRANSISTOR 106 d1 transistor R1A diode FR 105 MTBF-ZPS40 R22A 78540 r1a transistor 217F transistor MTBF
2009 - transistor R1d

Abstract:
Text: VIN R1C + VZ - D1C IZ C1C Option C VIN Q1 VPWR R1D + VZ - IQ , bipolar transistor . This circuit reduces the current through the resistor from IZ + IQmax to IZ + IQmax/ hFE, where hFE is the bipolar transistor 's current gain. Also, the bipolar transistor 's current gain , is the NPN transistor 's maximum base-emitter voltage at IQmax, typically near 0.7 V. Following the same recommendation in Option C, Equation 2 shows how to compute R1D with VZmax 0.9*VINmax. - VZmax


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PDF SLVA338 TPS6116x/7x/8x/9x TPS6116x, TPS6118x TPS6119x TPS6117x transistor R1d r1c diode TPS6116x Zener Diode R1C how to work 30v zener diode diode R1D zener diode voltage drop and breakdown bc848 NPN transistor
2011 - pm2301as

Abstract:
Text: integrated power Fieldeffect Transistor (FET) Constant Current Constant Voltage (CCCV mode) Flexible charge , . 1/1424-LZN 901 4441 Uen Rev D 2012-07-10 LZN 901 4441 R1D © Copyright ST-Ericsson 2011 , Rev D 2012-07-10 LZN 901 4441 R1D 2 (72) © Copyright ST-Ericsson 2011, 2012. All rights , Uen Rev D 2012-07-10 LZN 901 4441 R1D 3 (72) © Copyright ST-Ericsson 2011, 2012. All , indicator 34 35 35 1/1424-LZN 901 4441 Uen Rev D 2012-07-10 LZN 901 4441 R1D 4 (72


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PDF PM2301 1/1424-LZN pm2301as PM2301 PM2301AST abstract for overvoltage and overcurrent monitor marking R1d PM2301AHT 1110mA battery charger schematic ST-Ericsson marking information
2002 - PKB 4610 PIP

Abstract:
Text: with rubbing EN/LZT 108 6067 R1D ©Ericsson Inc., Power Modules , November 2002 PKB 4610 PINB , 36-75Vdc Cin CD3 CD2 CY3 PKB Module - CY1 EN/LZT 108 6067 R1D ©Ericsson Inc., Power , 108 6067 R1D ©Ericsson Inc., Power Modules , November 2002 PKB 4610 PINB Output Characteristic , TA = +25oC, IO = 20A, Vin = 53V EN/LZT 108 6067 R1D ©Ericsson Inc., Power Modules , November 2002 , /off is referenced to the primary side. A mechanical switch or an open collector transistor or FET


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2008 - r1c diode

Abstract:
Text: R1 and R2 from their calculated values given by, R1C RD = R1 + R2 C C ( R1D - R2D , providing. Figure 4 shows how this can be done using a transistor Q1 to provide current amplification , a SOT23 transistor with a VCEO rating of -60V, an IC of -1A and can dissipate up to 350mW when , ( R1D - R 2 D ) + R1 + R 2 C C R1P R1P R1P R 2 P R 2 P - , ( R1D - R 2D ) + R1 + R 2 C C C C R1P R 2 P R1 + R 2 C C Equation 12


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PDF 200mA. D-81541 TX75248, r1c diode Zener Diodes with small tolerances manufacturer r1p 11 TRANSISTOR R2C Zener precision shunt regulators 431 ZXTP2039F precision shunt regulator 431 h a 431 transistor E192 AN59
725-MHz

Abstract:
Text: ERICSSON ^ PTB 20020 150 Watts P-Sync, 470-800 MHz UHF TV Power Transistor Description The 20020 is an NPN com m on em itter UHF TV pow er transistor intended for 2 8 -3 2 Vdc class AB operation across the 470 to 800 MHz UHF TV frequency band. It is rated at 150 watts P-sync minimum output power. It is intended to operate uncorrected at 100 watts Psync (tested to EIA Standard 4.1.3 Section 5 Method , : 408-778-9434 Specifications subject to change without notice. © Ericsson Components AB 1994 R1D M ay 1998


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PDF
Not Available

Abstract:
Text: Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle ! For Ground and Air DME , ! ()*)#+,+*' -).' /01,' HM+*$)'!N+D1D,)04+! :O9F! J@PG! ()*)$+,+*! S&)Q! R1D $),4M! H , igh Voltage, H igh Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10 , Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle ! For Ground and Air DME, TCAS and I F F , ! H V V0912-150 H igh Voltage, H igh Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz


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PDF V0912-150 21DD1E)
2005 - LTC4416

Abstract:
Text: 1.222V • V1 R1A 221k R1D 187k 24.9k 105k E1 V1 GND G1 E2 VS H2 G2 , €¢ (R1A + (R1C R1D ) = 1.222V • R1C R1D ( 221k + 24.9k 187k 2 24.9k 187k ) = 13.51V , R1D 182k R2E R1C 187k 24.3k LTC4416-1 H1 G1 E1 V1 GND VS Q1 Si7495DP SUPPLY , 24.3k VRESTORE = VETH • (R1A + (R1C R1D ) = 1.222V • R1C R1D ( 75k + 24.3k 182k 5 , below ground, transistor Q1 can be eliminated. The LTC4416-1 should be used in this configuration


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PDF LTC4416/LTC4416-1 10-Ln LTC4413 LTC4414 4416fa LTC4416 ltcfc
2005 - ltcfc

Abstract:
Text: : VFAIL = VETH · R2A + R2c R2c = 1.222V · V1 R1A 221k R1D 187k 24.9k 105k V1 , illustrates the external resistor configuration for this case. R1A + R1c R1c (R1A + (R1c R1D ) = 1.222V · R1c R1D ( 221k + 24.9k 187k 2 24.9k 187k ) = 13.51V Load Sharing Figure 4 , R1A 75k R2A 221k VTH2 WITH HYSTERESIS R2C 24.9k GND VTH1 WITH HYSTERESIS R1D 182k , channel is R1A + R1c R1c (R1A + (R1c R1D ) = 1.222V · R1c R1D ( 75k + 24.3k 182k 5


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PDF LTC4416/LTC4416-1 10-Lead LTC4413 LTC4414 4416fa ltcfc LTC4416 LTC4416-1 r2c transistor Marking R2E R2C marking R2E SOT23 LTC4416IMS marking r2c LTC4416EMS
2005 - ltcfc

Abstract:
Text: (R2A + (R2C R2E) · = 1.222V · V1 R1A 221k R1D 187k 24.9k 105k E1 V1 GND G1 , · (R1A + (R1C R1D ) V1 is Greater Than V2 Figure 3 illustrates the external resistor , V1 supply drops below 12V. = 1.222V · R1C R1D ( 221k + 24.9k 187k 2 24.9k 187k ) = , R1D 182k R2E R1C 187k 24.3k LTC4416-1 G1 H1 E1 V1 GND VS Q1 Si7495DP SUPPLY , VRESTORE = VETH · (R1A + (R1C R1D ) = 1.222V · R1C R1D ( 75k + 24.3k 182k 5 24.3k 182k


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PDF LTC4416/LTC4416-1 10-Lead LTC4413 LTC4414 4416f ltcfc LTC4416 transistor marking r2c LTC4416-1 LTC4416EMS ltcps marking g1 SOT23 transistor R2C zener+diode+sr+4416
2006 - LT6103

Abstract:
Text: transistor M1 limits the voltage across RSENSE(LO). V­ 4 2.5V 6 4.99k LT1790-2.5 1µF 1 2 , (R1A + (R1C R1D ) Determine V1 VRESTORE by: R1C R1D ( 75k + 24.3k 182k 5 lockout by


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PDF LTC6103 LTC6104 LT6103 r2c transistor LT1910 transistor R1d LTC4416 automotive high side switch H-bridge speed control 12v 10a SUB85N06-5 CMPT5551 LTC4416-1
2010 - GROUND BASED RADAR

Abstract:
Text: Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications ! , JN+*$)'!O+D1D,)04+! :I7A! L@PH! ()*)$+,+*! S&)Q! R1D $),4N! J&'+*)04+! J+D,!@&0Q1,1&0 , Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications , -01-PO22X1 1/5/10 3 HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz , ! HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty


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PDF HVV1214-140 21DD1E) GROUND BASED RADAR transistor SMD R1D
2006 - SOT-23 R2C

Abstract:
Text: R2D S2 R3D R1D TP 4 (WDI VIN­) A B C D E 4 4 4 4 4 C5D 1 2 3 Option B C2 , and the PCB pad that may be useful if the in-line resistor (R1A, R1C, R1D or R1E) is installed. The , output S1, S2 DS51527B-page 14 Pull-down resistor R1A, R1C, R1D , R1E Switches © 2006 , 3 2 R3A A B C D E 5 5 5 5 6 S2 R1D TP 4 (WDI VIN­) A B C D E 4 4 4 4 4 , R3D S2 R1D TP 4 (WDI VIN­) A B C D E 4 4 4 4 4 A B C D E 3 3 3 - 3 Footprint Option


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PDF OT-23-5/6 DS51527B DS51527B-page SOT-23 R2C PIC10F2XX sot 23-5 footprint r2e sot 23 PIC10F200 PWM c programming TP4A r2c sot-23 DS21344 C5F sot c5 mark sot
1998 - circuit diagram of line follower robot

Abstract:
Text: 3.3 nF R2E 50K A2 A1 R3 1K R1C DRIVE NODE R7 250K R1D 200K R5 .05 50W , 200K R13A 200K R1C 200K R8A 200K (42.75V) (35V) (35V) R13B 50K R1D 50K , . R10A, R10B, R10C, and R10D current will nearly match the currents of R1C and R1D plus R8A and R8B. The , gradients and minimizing the response time to temperature changes in the output transistor junctions. The , SOLDER POWER TRANSISTOR Q9,26 H F The PA03 is a versatile new building block which eases many


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PDF 546-APEX circuit diagram of line follower robot 500w power amplifier circuit diagram 250w schematic diagram motor control circuit diagram of line follower robot without m 24V 500W dc motor speed control circuit diagram APEX PA12 circuit diagram of line follower robot analog schematic diagram Power supply 500w solar inverters schematic diagram line follower robot
1998 - APEX PA12

Abstract:
Text: R8B +88V 50K R11 .05 50W R9 2.4M R12 .05 50W +88V A4 A2 R1D 50K R10B 200K C6 3.3nF R15 1K , 880µA R1C 200K (35V) R1D 50K R8A 200K (35V) R8B 50K R9 2.4M (36.25) +7.75V 165 µ A +1.25V 171µA , input. R10A, R10B, R10C, and R10D current will nearly match the currents of R1C and R1D plus R8A and R8B , thermal gradients and minimizing the response time to temperature changes in the output transistor , SOURCE SOLDER Q19 W POWER TRANSISTOR Q9,26 BeO H E O A L F E COPPER HEADER


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PDF 546-APEX APEX PA12 24V 500W dc motor speed control circuit diagram circuit diagram of line follower robot PA03 circuit diagram of line follower robot analog dac 85741 line follower robot PA03-S super match pair
2005 - PIC10F200 PWM c programming

Abstract:
Text: 1 1 6 1 1 6 1 C1 TP4A 5 R2D S2 R3D R1D TP 4 (WDI VIN­) A B C D E 4 , that may be useful if the in-line resistor (R1A, R1C, R1D or R1E) is installed. The different SOT , Pull-down resistor R1A, R1C, R1D , R1E In-line resistance of device output S1, S2 DS51527A-page , S2 R1D TP 4 (WDI VIN­) A B C D E 4 4 4 4 4 Footprint Option/Pin Number Combination (Pad , VIN+) A B C D E 3 3 3 - 3 C5D R3D S2 R1D TP 4 (WDI VIN­) A B C D E 4 4 4 4 4


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PDF OT-23-5/6 DS51527A Mos34-8870 DS51527A-page PIC10F200 PWM c programming TP4A PIC10F2XX C5F sot MCP1035 SOT-23-5 R1A VARIABLE RESISTOR FOOTPRINTS MCP601 MCP6001R EVQ-ATA048
smd TRANSISTOR sot-23 a7

Abstract:
Text: .5 4.1.3 PWM Converter (Two Transistor Forward , converter operates at 200kHz - hard switching two transistor forward converter operates at 200kHz - , 200W SMPS Demonstration Board II 4.1.3 PWM Converter (Two Transistor Forward) The PWM converter is a two transistor forward topology. The operating frequency of 200 kHz is same as at the PFC , Aux vs 20 ac 2 Vref R8 10k recAC- R1D R1C 820k 1M R27 51k VDD VCC C92 µ47


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PDF AN-CoolMOS-09 TDA16888, 1X20/90I smd TRANSISTOR sot-23 a7 07N60 200w power amplifier PCB layout 230 AC to 5V smps ic 3525 bc817 optocoupler TDA 6275 TDA 200W 07n60 mosfet circuit diagrams TDA 4100 tda168886
1996 - rf121k

Abstract:
Text: CLC418 - U1A RfA VoB - U1B RfB C5C C5D VoC R1D D R1D 1- D R1C R3C C4C Make , ://www.national.com Component R1A C2A RfA R1B C2B R3B RfB R1C R3C C4C C5C RfC R1D /D R1D /(1-D) R3D C4D C5D RfD RgD , Information Transistor Count MTBF (based on limited test data) 76 34Mhr 11 http://www.national.com


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PDF CLC418 CLC418 SNOS836 -85/-64dBc rf121k
1996 - rf121k

Abstract:
Text: follows: Rm + Req R3C C4C 2 Vmax = Imax + 1/2 CLC418 - C5D R1D D VoC U2C RfC R1D 1- D R3D C4D + 1/2 CLC418 - Vo U2D RfD RgD where Req is the , C4C C5C RfC R1D /D R1D /(1-D) R3D C4D C5D RfD RgD Value Pre-distorted 211 Ideal For , Mount (AJE) Reliability Information Transistor Count MTBF (based on limited test data) 11 76


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PDF CLC418 CLC418 -85/-64dBc rf121k 150418 CLC418AJP CLC418AJE-TR13 CLC418AJE-TR CLC418AJE CLC418AJ CLC408 CLC111
6102-5X

Abstract:
Text: VCO (internal amplifier, external output transistor at UD and external RC-circuity). The charge pump , Telegram Exam ples Start-Addr-D R1-D R 2-C W 1-CW 2-Stop Start-Addr-CW 1-CW 2-DR 1-DR2-Stop Start-Addr-D R1-D R 2-C W 1-Stop Start-Addr-CW1 -CW2-DR1 -Stop Start-Addr-DR1-DR 2-Stop Start-Addr-CW1 -C W 2


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PDF 6102-5X P-DSO-16-1 VPS05119 67000-H5127 6102-5X 00b353T transistor BD 512
SMD MOSFET DRIVE 4450 8 PIN

Abstract:
Text: .5 4.1.3 PWM Converter (Two Transistor Forward , converter operates at 200kHz - hard switching two transistor forward converter operates at 200kHz - , Transistor Forward) The PWM converter is a two transistor forward topology. The operating frequency of 200 , 10k R5 C8 1k8 2n2 ac 1 C12 µ47 Vref R1D R1C 820k 1M R27 51k Q15 BC807 Q17 , power transistor (Q2A) of the PWM stage are driven by discrete high speed, high current driver stages


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PDF AN-CoolMOS-06 TDA16888, Room14J1 Room1101 SMD MOSFET DRIVE 4450 8 PIN A7 SMD TRANSISTOR transistor SMD R1D 6 PIN SMD IC FOR SMPS str 6750 smps power supply circuit 11N60 transistor SMD DK SMD a7 Transistor smd transistor A7 s 52 transistor SMD DK rc
2000 - STR 6750

Abstract:
Text: .5 4.1.3 PWM Converter (Two Transistor Forward , converter operates at 200kHz - hard switching two transistor forward converter operates at 200kHz - , Transistor Forward) The PWM converter is a two transistor forward topology. The operating frequency of 200 , R8 10k recAC- R1D R1C 820k 1M R27 51k 10 12 G2A PWMout 7 R89 22R R90 , power transistor (Q2A) of the PWM stage are driven by discrete high speed, high current driver stages


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PDF AN-CoolMOS-06 TDA16888, Room14J1 Room1101 STR 6750 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS 4450 SMD SO-8 SMD 3825 LED SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout
2003 - LT1711

Abstract:
Text: rails, the input bias currents are still a simple function of the input transistor base currents and , 7 TXD 1/2 LT1714 R3d 124 R1d 499 12 ­ 6 8 10 9 R2d 2.55k Figure 2


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PDF LT1711 LT1711 LT1712 100MHz LT1713 LT1714 65MHz LT1016, LT1671 LT1618 R2d DIODE 653K r2d transistor LT1712 LT1394 LT1016 BAV99
2011 - marking R1E SC-70

Abstract:
Text: Output Discharger The D version includes a transistor between VOUT and GND that is used for faster , NCP4671DSN09T1G R1D Auto-Discharge SOT-23-5 (Pb-Free) 3000 / Tape & Reel NCP4671DSN10T1G R1E


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PDF NCP4671 NCP4671 SC-70, SC-70 NCP4671/D marking R1E SC-70 SOT-23-5 R1A marking code r1e sot23 marking R1F sot-23-5 525 marking NCP4671DSN06T1G say marking code sot 23 marking C3 sot23-5 SOT 23 r1a marking R1E
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