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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor PNP A124 Datasheets Context Search

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2004 - transistor PNP A124

Abstract: A124 transistor a124* transistor a124 pnp transistor a124 STA124M PNP A124 A124 STC128M
Text: STA124M Semiconductor PNP Silicon Transistor Features · Suitable for low voltage large current drivers · High DC current gain and large current capability · Complementary pair with STC128M Ordering Information Type NO. Marking STA124M Package Code A124 TO-92M Outline Dimensions unit : mm 2.9~3.1 3.9~4.1 0.44 REF 13.6~14.4 0.52 REF 1.27 Typ. 2.9~3.1 , =1MHz - 5 - pF Collector-Emitter saturation voltage Transistor frequency Collector output


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PDF STA124M STC128M O-92M KST-I005-001 transistor PNP A124 A124 transistor a124* transistor a124 pnp transistor a124 STA124M PNP A124 A124 STC128M
transistor PNP A124

Abstract: CTC 880 3-PIN TRANSISTOR CTC 880 transistor 3 pin CTC 880 transistor
Text: regulator should be used in conjunction with a suitable PNP transistor to achieve regulation. As the , characteristics:– HFE >100 for VCE >=0.1V. If no external pnp transistor is used, the maximum current , 390 490 mA 1 volt regulator 7 0.95 1.0 1.05 V I load =3mA. Ext PNP . b> = 100, VCE = 0.1 V 1 volt regulator load current 7 0.25 3 mA External PNP b> = 100 , regulator 7 0.93 1.0 1.05 V I load =3mA. Ext PNP . b> = 100, VCE = 0.1 V 1 volt


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PDF SL6679 SL6679 450MHz. transistor PNP A124 CTC 880 3-PIN TRANSISTOR CTC 880 transistor 3 pin CTC 880 transistor
transistor PNP A124

Abstract: CTC 880 transistor ctc 880 transistor pins
Text: conjunction with a suitable PNP transistor to achieve regulation. As the transistor forms part of the , >=0.1V. If no external pnp transistor is used, the maximum current sourcing capability of the regulator , 1.0 1.05 V I load =3mA. Ext PNP . b> = 100, VCE = 0.1 V 1 volt regulator load current 7 0.25 3 mA External PNP b> = 100, VCE=0.1 V LNA current source, IRF 1 375 500 , 1.05 V I load =3mA. Ext PNP . b> = 100, VCE = 0.1 V 1 volt regulator load current 7 0.25


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PDF SL6619 SL6619 450MHz. transistor PNP A124 CTC 880 transistor ctc 880 transistor pins
transistor PNP A124 EQUIVALENT

Abstract: transistor PNP A124 E3G-R13-G E3G-R17-G E3G-MR19-G E3G-MR19T-G e3g ml79 g E3G-L77 E278-E2-04-X E3G-ML79T-G
Text: sensing object. Easy Optimum Sensing Distance Adjustments Select either transistor (NPN/ PNP , ) Brown 10 to 30 VDC Stability indicator (Green) Main circuit PNP output transistor ZD Black NPN or PNP output selector * NPN output transistor Load Load current Control , output transistor ZD * NPN or PNP output selector NPN output transistor Black Control , / PNP selector Relay contact output E3G-R13-G -E3G-R17-G E3G-MR19-G - E3G-MR19T-G E3G-L73


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PDF F502-EN2-04 E39-L129-G E3G-MR19-G) E39-L129-G) E278-E2-04-X transistor PNP A124 EQUIVALENT transistor PNP A124 E3G-R13-G E3G-R17-G E3G-MR19-G E3G-MR19T-G e3g ml79 g E3G-L77 E278-E2-04-X E3G-ML79T-G
transistor PNP A124

Abstract: transistor a124 A124 transistor CA0324E CA224 LM2902M CA324 CA124 PNP A124 DIODE m14
Text: current is due to the collector base junction of the input p-n-p transistors becoming forward biased and , parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the , input is driven negative. This transistor action is not destructive and normal output states will , C A124 CA224, CA324, LM 324 M AX 5 7 MIN TYP 2 7 ' ' ' ' LM2902 MIN TYP 7 ' PARAM ETER Input , - 0.8 - 2 - - 0.7 1.5 1.2 3 mA mA NOTES: 4. Due to the PNP input stage the


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PDF CA124, CA224, CA324, LM324, LM2902 LM2902 transistor PNP A124 transistor a124 A124 transistor CA0324E CA224 LM2902M CA324 CA124 PNP A124 DIODE m14
2000 - TRANSISTOR A107

Abstract: transistor A143 Transistor A119 TRANSISTOR A117 A124 transistor transistor a124 A124
Text: Transistor MRF6522-5R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A and Class AB , 0.777 –122 4.55 79 0.073 –5 0.706 –107 0.600 0.776 –124 4.37 , 61 0.069 –21 0.720 –124 0.825 0.777 –141 3.14 59 0.068 â , | 0.066 2 |S22| 0.652 –107 0.525 0.754 –124 6.09 84 0.065 –1 0.650 , €“15 0.658 –124 0.750 0.747 –142 4.28 65 0.062 –17 0.660 –126 0.775


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PDF MRF6522â MRF6522-5R1 TRANSISTOR A107 transistor A143 Transistor A119 TRANSISTOR A117 A124 transistor transistor a124 A124
Not Available

Abstract: No abstract text available
Text: drives the base of a PNP transistor operating common–emitter with a voltage gain of approximately 20. The control R1 varies the quiescent Q point of this transistor so that varying amounts of signal , 50–150 pF L1 = 24 turns, #22 AWG wire on a T12–44 micro metal Toroid core ( –124 pF) 1 36


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PDF ML1490 MC1490 ML1490 MC1490P ML1490PP
1995 - T44A

Abstract: No abstract text available
Text: turns, #22 AWG wire on a T12–44 micro metal Toroid core ( –124 pF) 4 8 MC1490P 1 36 pF , COMPRESSOR Table 1. Distortion versus Frequency The amplifier drives the base of a PNP MPS6517 , point of this transistor so that varying amounts of signal exceed the level Vr. Diode D1 rectifies the


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PDF MC1490/D MC1490 MC1490 MC1350D MC1490/D* T44A
2482 TRANSISTOR

Abstract: transistor 2482 TE 2482 ic ha 174 2482 H Transistor C 2482 2SC4161 2482 npn 2482 regulator B212A
Text: [ Ordering number: EN 2482 No.2482 _2SC4161 NPN Triple Diffused Planar Silicon Transistor 400V/7A Switching Regulator Applications Features . High breakdown voltage, high reliability . Fast switching speed (tf=0.1ps typ) . Wide ASO . Adoption of MBIT process . Micaless package facilitating mounting Absolute Maxima Ratings at Ta=25°C Collector -to-Base Voltage Collector-to-Emitter Voltage , DD2D17H «=124 H 175


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PDF 2SC4161 00V/7A 300ps 7Ti707b DD2D17H 2482 TRANSISTOR transistor 2482 TE 2482 ic ha 174 2482 H Transistor C 2482 2SC4161 2482 npn 2482 regulator B212A
transistor PNP A124

Abstract: No abstract text available
Text: the collector-base ju n c tio n o f th e in p u t p-n-p transistors becom ing fo rw a rd biased and , lateral n-p-n parasitic transistor a ction on th e 1C chip . This transistor action can cause th e o u tp , overdrive) fo r the tim e d u ra tio n th a t an in p u t is driven negative. T his transistor action is n , Specified C A124 L IM IT S U N IT S M in. T yp. Max. T a = 2 5 °C In p u t O ffse t V


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PDF CA124, CA224, CA324, LM324* LM324 92CS-Z6486 92C3-242I3 transistor PNP A124
2004 - Not Available

Abstract: No abstract text available
Text: transistor below this frequency. Typical applications include narrow and moderate band IF and RF , .19 .18 .17 .23 –24 –46 –79 –103 –124 –139 –172 163 149 132 124 121


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PDF MSA-0886 MSA-0886 5965-9547E 5989-2083EN
1996 - transistor a1015 pin configuration

Abstract: a1718 transistor a1479
Text: +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , €“57.49 –72.30 –88.13 –101.60 — — — — — — — — — — — — — –1.24


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FT500BH

Abstract: transistor D313 FG1000AH FD500DH transistor PNP A124 FG600AH transistor pnp a111 GTO gate drive unit mitsubishi CR300FX SR252AM-40S
Text: -120 HVIGBT (High Voltage Insulated Gate Bipolar Transistor Modules) CM800HA-34H CM1200HA-34H CM600DY , 10000 0500 7 9HVIGBT HA High Voltage Insulated Gate Bipolar Transistor Modules 10HVIGBT HB High Voltage Insulated Gate Bipolar Transistor Modules Cu baseplate , Voltage Insulated Gate Bipolar Transistor Modules AISiC AISiC baseplate , 2 11 3HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules


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PDF SR60L-10S, SR60L-10R SR100L-10S, SR100L-10R SR130L-10S, SR130L-10R SR150L-10S, SR150L-10R SR170L-10S, SR170L-10R FT500BH transistor D313 FG1000AH FD500DH transistor PNP A124 FG600AH transistor pnp a111 GTO gate drive unit mitsubishi CR300FX SR252AM-40S
1996 - transistor a697

Abstract: A2757
Text: Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK , €“2.40 –1.83 –1.22 –.57 .25 .30 1.21 2.39 2.69 2.12 1.58 1.83 2.18 1.53 –1.24 â


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1995 - Not Available

Abstract: No abstract text available
Text: Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90 , 2.39 2.69 2.12 1.58 1.83 2.18 1.53 –1.24 –3.54 –4.87 — — — — — .00


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PDF 1500MHz 5963-2497E
1995 - Not Available

Abstract: No abstract text available
Text: Frequency, MHz Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature , €“15.775 –15.887 –16.033 –16.152 –16.344 –16.529 –16.750 –6.8 –9.3 –12.4 â


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PDF 500MHz 24-Volt 5963-2557E
1997 - Not Available

Abstract: No abstract text available
Text: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It , transistor has been applied ultra super mini mold package. Low Cre : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = , €“5.8 –12.4 –18.4 –24.6 –30.4 –36.2 –41.8 –47.0 –52.6 –57.5 –62.8 –67.6 â


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PDF
1995 - Not Available

Abstract: No abstract text available
Text: Characteristics θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , 1.04 .72 .43 .25 .14 .05 .02 .08 .14 .14 .18 PHASE DEG –.32 –1.24 –1.32 â


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PDF 1000MHz 5963-3227E
1995 - transistor a708

Abstract: No abstract text available
Text: 1.0 23 120 1 Thermal Characteristics 0 10 θJC Active Transistor Power Dissipation , –5.7 –7.2 –8.6 –9.7 –11.2 –12.4 –14.1 –15.4 –16.7 –18.1 –19.5 â


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PDF 100MHz 5963-2483E transistor a708
1995 - Not Available

Abstract: No abstract text available
Text: +125°C +12 VDC 3 1700 Frequency, MHz θJC Active Transistor Power Dissipation Junction , €” — — — — — –1.24 .14 .60 .26 .41 .15 –1.17 — — .95 .76 .59 .46


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PDF 2300MHz 5963-2440E
1991 - transistor bc 5588

Abstract: No abstract text available
Text: capacitance, facilitating wide bandwidth performance, without degrading JFET transistor matching. It slews , Swing RL = 2kΩ l ±11.5 ±12.4 ±11.5 ±12.4 SR Slew Rate AV = –1 l


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PDF LT1122 340ns 540ns 14MHz 600pA 150pA 10VP-P LT1022 LT1055/LT1056 LT1464 transistor bc 5588
1999 - Not Available

Abstract: No abstract text available
Text: On–board VCO Transistor The transistor has the emitter, base, collector, VCC d i il bl I t l bi i hi , emitter transistor . Minimum external matching is required to optimize the input return loss and gain , cascode transistor low power amplifier (LPA); it is externally biased. The output may be conjugately , the VCO transistor in a common collector configuration. This information is useful for designing a , INFORMATION Local Oscillator/Voltage Control Oscillator The on–chip transistor operates with coaxial


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PDF MC13146/D MC13146 MC13146 MC13145) MC33410 MC33411A/B)
1996 - a1232

Abstract: a1741
Text: Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK , 1.04 .72 .43 .25 .14 .05 .02 .08 .14 .14 .18 PHASE DEG –.32 –1.24 –1.32 â


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1996 - transistor a708

Abstract: a708 transistor
Text: to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , €“1.0 –2.2 –3.6 4.7 –5.7 –7.2 –8.6 –9.7 –11.2 –12.4 –14.1 –15.4 –16.7 â


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PDF 15VDC transistor a708 a708 transistor
1998 - Transistors General

Abstract: NPN general purpose silicon transistors 2SC411K UMZ1N transistor 526 c114e transistor 2SC411K 581 PNP dual npn 500ma PNP Transistors
Text: dimensions (Units: mm) FStructure Epitaxial planar type NPN / PNP silicon transistor FAbsolute maximum , . FStructure Epitaxial planar type NPN / PNP silicon transistor (Built-in resistor type) The following , be cut in half. FStructure A PNP and a NPN digital transistor (each with a single built in resistor , area can be cut in half. FStructure NPN / PNP epitaxial planar silicon transistor FExternal dimensions , (94S-902-AC144T) (94S-904-AC114Y) 581 Transistors General purpose transistor (dual transistors


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PDF 94S-830-AC115E) 96-458-AC124T) IMD10A 96-555-IMD10) IMD16A 96-473-IMD16) 94S-902-AC144T) 94S-904-AC114Y) 2SA1036K 2SC411K Transistors General NPN general purpose silicon transistors UMZ1N transistor 526 c114e transistor 2SC411K 581 PNP dual npn 500ma PNP Transistors
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