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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor NPN 30 watt Datasheets Context Search

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1992 - ELMWOOD SENSORS

Abstract: AN1308 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd 300 watts amplifier schematics Motorola design of audio amplifier an1308 12 volt audio amplifier class D schematic ELMWOOD
Text: , 1.625 diameter Q1, 2 2 NPN Transistor 80 volt Motorola MPS8099 Q3, 4 2 PNP Transistor 80 volt Motorola MPS8599 Q5 1 NPN Transistor 80 volt Motorola MPSW56 Q6 1 NPN Transistor 80 volt Motorola MPSW06 Q7 1 PNP Transistor 200 volt Motorola 2SA1306B Q8 1 NPN Transistor 200 volt Motorola 2SC3298B Q13 1 PNP Transistor 40 volt Motorola MPS750 Q14 1 NPN Transistor 40 volt Motorola MPS650


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PDF AN1308/D AN1308 AN1308/D* ELMWOOD SENSORS AN1308 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd 300 watts amplifier schematics Motorola design of audio amplifier an1308 12 volt audio amplifier class D schematic ELMWOOD
1992 - motorola AN1308

Abstract: 300 watts audio amplifier schematics 1000 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram Elmwood Sensors an1308 Aham Tor Inc elmwood sensors ltd t1z12 erg3sj100
Text: 30 ­ 25°C COMMON EMITTER VCE = ­ 5 V h FE , DC CURRENT GAIN 1000 500 300 2SC3281 - NPN COMMON , Diode 2 µH - 6 turns airwound #16 wire, 1.625 diameter NPN Transistor PNP Transistor NPN Transistor NPN Transistor PNP Transistor NPN Transistor PNP Transistor NPN Transistor NPN Transistor NPN Transistor PNP Transistor PNP Transistor NPN Transistor 221 , Resistor 2.21 k, Resistor 10 k, Resistor 511 , Resistor 22.1 , pF, Mica Capacitor Signal Diode 2 µH - 6 turns airwound #16 wire, 1.625 diameter NPN Transistor PNP


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PDF AN1308/D AN1308 AN1308/D* AN1308/D motorola AN1308 300 watts audio amplifier schematics 1000 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram Elmwood Sensors an1308 Aham Tor Inc elmwood sensors ltd t1z12 erg3sj100
2001 - opto-coupler darlington pnp

Abstract: transistor current booster circuit 2N3568 k 2750 transistor 2N3638 transistor 12 volt dc operated power led circuit Motorola transistors MJE3055 transistor MJE3055 2N3638 pnp phototransistor
Text: current and 10 watt dissipation are needed. A Motorola MJE3055 might be used for the output transistor , and a 60°C maximum ambient. The transistor junction-to-ambient thermal resistance is 333°C/ watt , so , because the LED light output and transistor beta have approximately compensating coefficients. Figure 1. NPN driver VCC IO RIF 1.2 K T2L Input 2N3568 Multiplying the minimum CTR by 0.9 , to discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the


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PDF 2N3568 opto-coupler darlington pnp transistor current booster circuit 2N3568 k 2750 transistor 2N3638 transistor 12 volt dc operated power led circuit Motorola transistors MJE3055 transistor MJE3055 2N3638 pnp phototransistor
2001 - 2N3568

Abstract: optocoupler pnp 2N3638 transistor Motorola transistors MJE3055 optocoupler pnp or npn K39 2 GATE optocoupler NPN 2N3638 transistor current booster circuit k 2750 transistor
Text: than one transistor must be used in cascade. For example, suppose 3 amperes load current and 10 watt , boosters Figure 4. NPN current booster Io Q1 Q2 Io Rb1 Rb2 ICBO(max) at 30 volts or , ambient. The transistor junction-to-ambient thermal resistance is 333°C/ watt , so a maximum junction , limited by the 30 volt rating of the IL1 not by the voltage or power rating of the transistor (s). Figure , 1. NPN driver VCC Available optocoupler output current is found by multiplying input (LED


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PDF 2N3568 1-888-Infineon 2N3568 optocoupler pnp 2N3638 transistor Motorola transistors MJE3055 optocoupler pnp or npn K39 2 GATE optocoupler NPN 2N3638 transistor current booster circuit k 2750 transistor
1997 - opto-coupler darlington pnp

Abstract: 2N3568 OPTOCOUPLER HAND BOOK Motorola transistors MJE3055 pnp phototransistor transistor current booster circuit mje3055 data transistor MJE3055 optocoupler pnp or npn optocoupler base resistor
Text: transistor must be used in cascade. For example, suppose 3 amperes load current and 10 watt dissipation are , NPN and the PNP circuits. R b provides a return path for ICBO of the output transistor . Its value is , derating is not usually necessary over the 0°C to +60°C range because the LED light output and transistor beta have approximately compensating coefficients. Figure 1. NPN driver VCC IO Multiplying , the IL1 is being operated from logic with 5 volt driving transistor and 0.2 volt VCE saturation is


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Not Available

Abstract: No abstract text available
Text: : Output Power — 30 Watts Gain — 9 dB Min @ 30 Watts (PEP) Efficiency — 30 % Min @ 30 Watts (PEP) Intermodulation Distortion — – 30 dBc Max @ 30 Watts (PEP) 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON , Transistor , NPN , Motorola (MJD47) 2 x 330 Ω, 1/8 Watt Chip Resistors in Parallel, Rohm 100 Ω, 1/8 Watt , R9, R10 Board Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 Ω, 1/8 Watt , NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common


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PDF MRF15030/D MRF15030 MRF15030/D*
CAPACITOR chip murata mtbf

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
Text: Power - 30 Watts Gain - 9 dB Min @ 30 Watts (PEP) Efficiency - 30 % Min @ 30 Watts (PEP) Intermodulation Distortion - ­ 30 dBc Max @ 30 Watts (PEP) 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON , Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 , 1/8 Watt , Chip Resistor Rohm 500 , 1 , NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large­signal, common , Flange Mount RF Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount Transistor , NPN


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PDF MRF15030/D MRF15030 MRF15030/D* CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
marking code ff SMD Transistor

Abstract: SMD MARKING CODE C2U SMD MARKING CODE C1G C2U SOT-89 transistor smd 2N4403 c1g smd 2N3904 TRANSISTOR SMD SOT23 transistor 2N2222A RF transistor marking IN SOT-89 2N3640
Text: . DESCRIPTION MIN - MAX MIN MARKING LEADED CMPT918 NPN RF OSC 15 350 20 3.0 600 C3B 2N918 CMPT2222A NPN , 2N2907A CMPT3640 PNP SAT SWITCH 12 80 30 120 10 500 C2J 2N3640 CMPT3904 NPN AMPL/SWITCH 4o 200 100 300 , 2N5087 CMPT5088 NPN LOW NOISE 30 50 300 900 0.1 50 CI Q 2N5088 CMPT5089 NPN LOW NOISE 25 50 400 1200 , DARLINGTON 30 * 500 10K 100 125 C1M MPSA13 CMPTA14 NPN DARLINGTON 30 * 500 20K 100 125 C1N MPSA14 CMPTA42 NPN HIGH VOLT 300 500 40 30 50 C1D MPSA42 CMPTA56 PNP HIGH CURRENT 80 500 50 100 50 C2G MPSA56


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PDF DDQD43D OT-23, OT-89 OT-23 CMPT918 2N918 CMPT2222A CXT390A CXT3904 2N3904 marking code ff SMD Transistor SMD MARKING CODE C2U SMD MARKING CODE C1G C2U SOT-89 transistor smd 2N4403 c1g smd 2N3904 TRANSISTOR SMD SOT23 transistor 2N2222A RF transistor marking IN SOT-89 2N3640
transistor current booster circuit

Abstract: CCLH150 CZT2955 CZT3055 ir* booster current limiting diodes transistor theory
Text: shown in Figure 2A and 2B. In this circuit, the transistor Q1 ( NPN ), or Q1A (PNP) amplifies the CLDs , booster with an NPN transistor and Figure 2B with a PNP transistor . The principle of operation of the two , . Current Booster with NPN transistor For illustration, the complementary NPN CZT3055 and PNP CZT2955 , regulation only up to 15mA maximum, and in terms of power, only 1 watt maximum. Hence, the usefulness of the , design technique to boost the current limit by utilizing the current gain of a transistor and applying


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2N5108

Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ TRANSISTOR C-111 M MOTOROLA 2N5108
Text: TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR . . designed fo r am plifier, frequency m u ltip lie r, or , pre-driver stages in UHF equipm ent and as a fundam ental frequency oscillator at 1.68 GHz. NPN SILIC O N · Specified 1 GHz, 28 Vdc Characteristics O u tp u t Power - 1.0 Watt M inim um Gain = 5 0 dB E fficiency = 35% Typical 1.68 GHz, 28 Vdc Characteristics O u tp u t Power = 0.3 Watt Efficiency = 15% · , Valua 30 55 55 3.0 0.4 3.5 0.02 -65 to +200 Unit Vdc Vdc Vdc Vdc Ade Watts W /°C c Po NOTES 1


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PDF 2N5108 2N5108 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ TRANSISTOR C-111 M MOTOROLA 2N5108
bd136 equivalent

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ pl 032 pif FL 032 PIF
Text: ) Transistor , NPN Motorola (MJD47) Glass Teflon®, Arlon GX-0300-55-22 Figure 1. Class AB, 1.93 - 2 GHz Test , Flange Mount RF 55-22, Connector, Omni Spectra Transistor , NPN , Motorola (BD135) Transistor , PNP , Distortion 30 dBc · Characterized with Series Equivalent Large-Signal Impedance Parameters · S-Parameter , MRF20060 MRF20060S 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR MAXIMUM RATINGS Rating , CBO VCER VEB ic Pd Tstg Tj Rating Thermal Resistance, Junction to Case Symbol R0JC Value 25 60 60 30


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PDF MRF20060/D MRF20060 MRF20060S bd136 equivalent RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ pl 032 pif FL 032 PIF
2001 - transistor HFE 400 1w

Abstract: No abstract text available
Text: Dissipation : PC=1W · 3 Watt Output Application 1 TO-92L 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO , KSC2328A - NPN Epitaxial Silicon Transistor SEARCH | Parametric | Cross Reference space Fairchild , version Revision date Product Folder - Fairchild P/N KSC2328A - NPN Epitaxial Silicon Transistor , Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 30 5 2 1


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PDF KSC2328A KSA928A O-92L KSC2328A O-92-3 transistor HFE 400 1w
BD179

Abstract: BD179-10 BD180 NPN bipolar junction transistors max hfe 2000
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon NPN Transistor . . , "C unless otherwise noted) BD179 BD179-10 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS , Response 20 30 200 300 500 1000 Motorola Bipolar Power Transistor Device Data 3-169 MOTOROLA , Resistance, Junction to Case 0JC 4.16 'C/W 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS CASE , 30 200 300 500 1000 Motorola Bipolar Power Transistor Device Data 3-169


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PDF BD179 BD180 BD179-10 BD180 NPN bipolar junction transistors max hfe 2000
2N5108

Abstract: No abstract text available
Text: 2N5108 SC (XSTRS/R F) MOTOROLA T h e R F L in e 1.0 W -1 GHz HIGH FREQUEN CY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed for amplifier, frequency multiplier, or oscillator , Characteristics - Output Power - 1.0 Watt Minimum Gain s 5.0 d8 Efficiency 35% Typical 1.68 GHz, 28 Vdc Characteristics - Output Power = 0.3 Watt Efficiency * 15% NPN SILIC O N · . w STYLE 1 P IN ! , D E C Registered Date. Symbol VceO V CER VCB V£B >C Pd T stg Value 30 55 55 3.0 0.4 3.5 0.02 -65 to


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PDF L3b72S4 2N5108 2N5108
8115, transistor

Abstract: JE700 je800 8115 TRANSISTOR 10 amp npn darlington power transistors JE701 MJE603 50-WATT MJE700T mje801
Text: MOTORGLA SC MOTOROLA XSTRS/R F 1SE D I b3b?2SM 0005333 f l PNP NPN I T , COMPLEMENTARY SILICON 40 WATT 50 WATT hFE = 2000 (Typ) @ lc = 2.0 Adc · M o n o lith ic Construction w ith , XSTRS/R F 12E D I L3L7aS4 0065334 T | PNP MJE700J thru MJE703 NPN MJE800,T thru , 5.0 Vdc, lC " 0) ON CHARACTERISTICS DC Current Gain (1) ( 1 0 * 1 .5 Ade, V C E " 3.0 Vdc) (IC B 2.0 Ade, V c e * 3.0 Vdc) (lc * 4.0 Ade, V q e = 3.0 Vdc) Collector-Emitter Saturation Voltage (1) 0 c * 1


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PDF T-33-33 MJE700J MIE703 MJE800J MJE803 Q0aS33b MJE703 MJE800 8115, transistor JE700 je800 8115 TRANSISTOR 10 amp npn darlington power transistors JE701 MJE603 50-WATT MJE700T mje801
MRF448

Abstract: No abstract text available
Text: ) 227-6005 FAX: (973) 376-8960 The RF Line NPN Silicon RF Power Transistor MRF448 Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Efficiency = 45% 250 W, 30 MHz RF POWER TRANSISTOR NPN SILICON â , noted.) Symbol Win Typ Max Unit hFE Characteristic 10 30 — —â


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PDF MRF448 -30dB 1N4997 Z-235 MRF448
db9 to rj12 pin out

Abstract: RJ12 to RS485 ELC-PV28NNDR Cutler-Hammer type m RELAY ELC-EX16NNDR RJ12 pin out RJ12 db9 ELC-EX16NNDN-1 Cutler-Hammer line starter 485AP
Text: Input AC 8 Input DC 4 Input DC, 4 Output Relay 4 Input DC, 4 Output Transistor NPN 8 Output Relay 8 , Transistor NPN 2 Output Analog 4 Input 4 Output 4 Input Analog, 2 Output Analog 4 Input , These Controllers Support Hundreds of I/O Points Large Module Selection AC/DC In, Relay/ Transistor Out , many other devices. With over 30 objects that can be placed anywhere on the display, these durable , Broad Selection of AC/DC Inputs, Relay/ Transistor and High Current Outputs That May Be Used Together in


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PDF ELC-PV28NNDR ELC-PA10AADT, ELC-PS01, ELC-GP04, db9 to rj12 pin out RJ12 to RS485 Cutler-Hammer type m RELAY ELC-EX16NNDR RJ12 pin out RJ12 db9 ELC-EX16NNDN-1 Cutler-Hammer line starter 485AP
JE802

Abstract: JE700 JE803 JE700 MOTOROLA JE702 JE703 JE800 75 watt npn switching transistor MJE700T
Text: SILICON 40 WATT 50 WATT PNP NPN High DC Current Gain - hFE = 2000 (Typ) @ lc = 2.0 Adc , Derating REV 3 a -« i2 Motorola Bipolar Power Transistor Device Data M JE700,T M JE702 M JE703 M , - 1.5 Adc, V ce - 3.0 Vdc) (IC - 2.0 Adc, V ce - 3 0 Vdc) (lc - 4.0 Adc, V C E - 3.0 Vdc) Collector-Emitter Saturation Voltage (1) (IC - 1-5 Adc, iß - 30 mAdc) (IC - 2.0 Adc, Iß " 40 mAdc) (IC - 4.0 Adc, Iß - 40 mAdc) Base-Emitter On Voltage (1) (IC - 1 5 Adc, Vc e - 3.0 Vdc) (IC - 2.0 Adc, V C E - 3.0 Vdc


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PDF JE700 JE702 JE703 JE800 JE802 JE803 MJE700 MJE800 T0220AB, MJE700T JE803 JE700 MOTOROLA 75 watt npn switching transistor
1996 - SL3127C

Abstract: SL3127
Text: 1.1 SL3127 HIGH FREQUENCY NPN TRANSISTOR ARRAY The SL3127C is a monolithic array of five high frequency low current NPN transistors in a 16 lead DIL package. The transistors exhibit typical fTs of , being dissipated in one transistor , these thermal resistance figures should be increased by 100°C/ watt , 0.64 Value Typ. 30 18 55 20 0.74 0.26 0.1 0.95 0.45 0.2 2.0 -1.6 35 35 40 95 100 100 0.3 0.6 100 0.4 , volt VEB = 4.0 volt VCE = 15 volt VCI = 20 volt IC = 20 mA Maximum individual transistor dissipation


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PDF DS3626 SL3127 SL3127C SL3127 200MHz)
MM8009

Abstract: MM8008 MM8010 MM8011 38-to-38 1031W
Text: MM8009 (silicon) NPN SILICON RF POWER TRANSISTOR . designed for amplifier, frequency , mW (Typ) @ f = 1.68 GHz NPN SILICON RF POWER TRANSISTOR MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc Collector-Base Voltage VCB 55 Vtic Emitter-Base Voltage V6B 3.0 Vdc , €¢ High Output Power - Pout = 0.9 Watt (Min) @ f = 1.0 GHz • High Current-Gain-Bandwidth Product - fy , «0) bvebo 3.0 - Vdc Collector Cutoff Current (VCE = 15Vdc, lB-0) 'CEO — — 100 pAdc Collector Cutoff


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PDF MM8009 MM8010 MM8011 MM8008 MM8009 MM8010 MM8011 38-to-38 1031W
NTE74HC4067

Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4553B NTE74HC165 NTE74HC4053 NTE4027B NTE4023B
Text: No file text available


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PDF NTE40175B NTE4017B NTE40182B NTE4018B NTE4001B NTE4019B NTE4001BT NTE40192B NTE4002B NTE40193B NTE74HC4067 NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4553B NTE74HC165 NTE74HC4053 NTE4027B NTE4023B
RCA-41024

Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 41024 transistor C4 016 rca 0190 transistor 4-1024
Text: File No. 658 RF Power Transistors Solid State Vision 41024 1-W, 1-GHz Silicon N-P-N Overlay Transistor High-Gain Device for Class B- or Cooperation in UHF Circuits Features: ■1- watt output min. at 1 GHz (5 dB gain) ■For sonde applications 0.3- watt output typ. at 1.68 GHz (Vcc = 20 V) RCA-41024 is an epitaxial silicon n-p-n planar transistor of the overlay-emitter-electrode construction. It is , A TRANSISTOR DISSIPATION: PT At case temperatures up to 25Â


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PDF RCA-41024 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 41024 transistor C4 016 rca 0190 transistor 4-1024
BT 156 transistor

Abstract: TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 RCA-40637A i53b 5659065 rca transistor
Text: File No. 655 . dqob/JO RF Power Transistors Solid State Division 40637A Silicon N-P-N Epitaxial Planar Transistor For Frequency-Multiplier Service in Mobile, Marine, and Sonobuoy VHF Transmitters Features: ■High transistor dissipation rating (Pj) = 2 W max. ■Low output capacitance (C0(,) = 4 pF max. ■Hermetically sealed JEDEC TO-18 package RCA-40637A is a silicon n-p-n epitaxial planar transistor intended for frequency multiplier service to 175 MHz. The 40637A is particularly


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PDF 0637A RCA-40637A 0637A 13-MHz 92CS-20223 BT 156 transistor TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 i53b 5659065 rca transistor
WIT122

Abstract: IT121-T071 0250 ic 5 pins IT121 IT122 T071
Text: Watt 4.3mW/°C 45 V 45 V 7.0 V 60 V 50mA IT120-IT122 Dual Monolithic NPN Transistor PIN , 'B2 < 2.5 nA Tight VBE Tracking < 3.0 juV/°C ABSOLUTE MAXIMUM RATINGS (Note 1) @ 25 C (unless , Dissipation at 25 C Case Temperature Derating Factor 0.4 Watt 0.75 Watt 0.3 Watt 2.3mW/°C 4.3mW/°C 1.7mW/°C Maximum Voltage & Current for Each Transistor CBO VCEO VEB0 ''cco Collector to Base Voltage , 5.0 V hFE(-55°CI DC Current Gain 75 75 30 , 30 ic = io ma, vce - 5.0 v VBE(ON) Emitter-Base On


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PDF 10iiA, WIT122 IT121-T071 0250 ic 5 pins IT121 IT122 T071
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: MOTOROLA TRANSISTOR 935 bd136 transistor BD136 937 motorola MRF20030 MJD47 BD135 transistor NPN 30 watt AN 933 motorola
Text: . 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR · Specified 26 Volts, 2.0 GHz, Class AB , ) Transistor , NPN Motorola (MJD47) 30 Mil Glass Teflon®, Arlon GX­0300­55­22, r = 2.55 Figure 1. Class AB , C9 Transistor , NPN , Motorola (BD135) Transistor , PNP, Motorola (BD136) 250 W, Chip Resistor, 1/8 , , 1/8 Watt , Rohm 75 W, Chip Resistor, 1/8 Watt , Rohm 30 Mil Glass Teflon®, Arlon GX­0300­55­22, r = , Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial


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PDF MRF20030/D MRF20030 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ MOTOROLA TRANSISTOR 935 bd136 transistor BD136 937 motorola MRF20030 MJD47 BD135 transistor NPN 30 watt AN 933 motorola
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