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LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor NEC D 882 p Datasheets Context Search

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transistor NEC D 882 p

Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
Text: ; Electrostatic Sensitive Device. D o c u m e n i No. P 1 0 4 0 0 E J2 V 0 D S 0 0 (2nd e d itio n ) ( P re v io u s No. T D -2 4 1 2 ) D ale P u b lish e d J u ly 1995 P P rinted in J a p a n © NEC Corporation , DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES · · · · Small Package High Gain Bandwidth Product , support, etc. The quality grade of NEC devices in " Standard" unless otherw ise specified in NEC 's D


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PDF 2SC5012 2SC5012-T1 2SC5012-T2 transistor NEC D 882 p transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
transistor NEC D 882 p

Abstract: nec d 882 p transistor NEC b 882 p nec d 882 p transistor transistor NEC 882 p NEC 882 p nec d 882 p transistor transistor transistor NEC b 882 transistor nec d 882 nec d 882
Text: would not suffer from any damage due to those voltage or fields. D ocu m e n t No. P 1 0 5 8 6 E J3 V 0 D S 0 0 (3 rd e d itio n ) Date P u b lish e d Ju n e 1996 P P rinted in Ja pa n © N E , devices in " Standard" unless otherw ise specified in NEC 's D atasheets or Data Books. If custom ers , DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Low V dd Use Driving Battery Low


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PDF 3SK255 transistor NEC D 882 p nec d 882 p transistor NEC b 882 p nec d 882 p transistor transistor NEC 882 p NEC 882 p nec d 882 p transistor transistor transistor NEC b 882 transistor nec d 882 nec d 882
transistor NEC D 882 p

Abstract: transistor NEC 882 p nec d 882 p transistor NEC b 882 p transistor NEC b 882 transistor nec d 882 nec d 882 p transistor transistor TRANSISTOR b 882 p transistor NEC 882 2s D 882 p
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL , this device would not suffer from any damage due to those voltage or fields. D o c u m e n t No. P 1 0 5 8 6 E J3 V 0 D S 0 0 (3rd e ditio n ) D ate P u b lish ed J u n e 1 996 P P rinted in Ja pa n , 7.0 M arking I dsx ( m A ) 2 NEC TYPICAL CHARACTERISTICS (T a = 25 °C) T O T A L P O W E R D IS S IP A T IO N vs. A M B IE N T T E M P E R A T U R E - Total Power Dissipation - m W


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PDF 3SK255 transistor NEC D 882 p transistor NEC 882 p nec d 882 p transistor NEC b 882 p transistor NEC b 882 transistor nec d 882 nec d 882 p transistor transistor TRANSISTOR b 882 p transistor NEC 882 2s D 882 p
transistor NEC D 882 p

Abstract: a 1232 nec transistor NEC 882 p nec d 1590
Text: 120 T64 T64 100 to 200 D ocu m e n t No. P 11191 E J2 V 0 D S 0 0 (2 n d e d itio n ) Date Published February 1996 P Printed in Japan © NEC Corporation 1996 NEC TYPICAL CHARACTERISTICS (T a = , -71.7 -76.4 -83.2 - 88.2 -94.2 6 NEC [MEMO] 2SC4186 7 NEC 2SC4186 No part of this , DATA SHEET SILICON TRANSISTOR 2SC4186 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC4186 is an NPN silicon epitaxial transistor intended for use as a


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PDF 2SC4186 2SC4186 transistor NEC D 882 p a 1232 nec transistor NEC 882 p nec d 1590
1997 - nec 2412

Abstract: transistor NEC 882 p 2412 NEC TD-2412 NEC 2403 545 NEC 2403 106 2SC5012-T1 2SC5012-T2 2SC5012 nec 2702
Text: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS · Small Package · High Gain , . 0.3 0.9 ± 0.1 0.4 +0.1 ­0.05 * Please contact with responsible NEC person, if you require , -2412) Date Published July 1995 P Printed in Japan © 1993 2SC5012 ELECTRICAL CHARACTERISTICS (TA = , 18.0 .987 .971 .952 .918 . 882 .848 .823 .788 .757 .747 .720 .703 .682 .681 .655 .644


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PDF 2SC5012 2SC5012-T1 2SC5012-T2 nec 2412 transistor NEC 882 p 2412 NEC TD-2412 NEC 2403 545 NEC 2403 106 2SC5012-T1 2SC5012-T2 2SC5012 nec 2702
transistor NEC D 882 p circuit diagram

Abstract: transistor NEC b 882 p transistor NEC D 882 p
Text: ecem ber 1 995 P Printed in Japan © N EC Corporation 1 9 9 5 IO D O I- o o * D , transistor . FEATURES CONNECTION DIAGRAM • Built-in the saturaiton protection circuit of the output transistor . • The capability of output current is500 mA. • High accuracy of output , < 125 ’ C) • Low dropout voltage. V • d if < 1 V 1 (lo < 500 mA, T j , ,uPC24M12AHF 15 V ,uPC24M15AHF 18 V M P -45G (Isolated T 0 -2 2 0 ) ,uPC24M07AHF 8 V


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PDF fxPC24M00A PC24M00A is500 PC24M00AHF IEI-1212 l-1209 IEI-1207 IEI-1213 EI-1202 F-1134 transistor NEC D 882 p circuit diagram transistor NEC b 882 p transistor NEC D 882 p
transistor NEC D 882 p

Abstract: TP-2253 transistor NEC D 986 transistor 3504 nec transistor NEC D 587 TBB 747 nec d 882 p transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4184 UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4184 is designed for use as an oscillator or a , T44 T44 100 to 200 D ocu m e n t No. P 1 1 1 8 9 E J2 V 0 D S 0 0 (2 n d e d itio n ) (Previous No. TP-2253) Date Published February 1996 P . , n . r _ Printed in Japan ® NEC , Standard" unless otherw ise specified in NEC 's D atasheets or Data Books. If custom ers intend to use NEC


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PDF 2SC4184 2SC4184 transistor NEC D 882 p TP-2253 transistor NEC D 986 transistor 3504 nec transistor NEC D 587 TBB 747 nec d 882 p transistor
2001 - C10535E

Abstract: NE52418 NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN
Text: DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52418 L to S BAND LOW NOISE AND HIGH , Transistor ) developed for L to S band mobile communication equipment. FEATURES · Ideal for low noise and , minimold package employed (SOT-343 style) · Grounded emitter transistor APPLICATIONS · Mobile , /reel Remark To order evaluation samples, consult your NEC sales representative. Part number for , country. Please check with local NEC representative for availability and additional information


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PDF NE52418 NE52418 OT-343 NE52418-T1 C10535E NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN
transistor NEC D 882 p

Abstract: 33 nec 125 t2 transistor NEC D 587 nec d 882 p transistor transistor
Text: sem iconductor devices, the p o ssibility of defects cannot be elim in a te d entirely. To m inim ize risks of dam age or injury to persons or p roperty arising from a defect in an NEC se m ico n d u cto r , granted under any patents, co p yrig h ts or o ther inte llectual property rights of NEC C orporation or , " unless otherw ise sp e cifie d in NEC 's D ata S heets or Data Books. If custom ers intend to use NEC , contact an NEC sales re presentative in advance. A n ti-ra d io a ctive design is not im plem ented in th


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PDF 2SC5179 SC-70 2SC5179-T1 2SC5179-T2 transistor NEC D 882 p 33 nec 125 t2 transistor NEC D 587 nec d 882 p transistor transistor
1997 - transistor NEC 882 p

Abstract: 3SK255
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES (Unit: mm) (VDS = 3.5 V , . Document No. P10586EJ3V0DS00 (3rd edition) Date Published June 1996 P Printed in Japan © 1993 , ­39.1 700 0.948 800 0.934 S22 ANG MAG ANG 0.035 ­ 88.2 0.985 ­2.9 , prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors


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PDF 3SK255 transistor NEC 882 p 3SK255
nec 13772

Abstract: transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD , , including static electricity. D ocu m e n t No. P121 0 6 E J2 V 0 D S 0 0 (2nd e d itio n ) ( P re v io u s No. T C -2 4 7 9 ) D ate P u b lish e d N o ve m b e r 1996 N Printed in Japan © N E C , the reliability of its sem ico n d u cto r devices, the p o ssibility of defects cannot be elim inated , to use NEC devices for a pplications other than those sp e cifie d for S tandard quality grade, they


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PDF 2SC5182 SC-59 2SC5182-T1 2SC5182-T2 nec 13772 transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm
Not Available

Abstract: No abstract text available
Text: fìjUeJc&gct - / PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4 , hole direction Remark To order evaluation samples, consult your NEC sales representative (available , -Ic mA mW °C °C p ./-" Ti Tstg Note Ta = + 2 5 °C (free air) THERMAL RESISTANCE Item , (1st edition) Date Published March 1999 N CP(K) Printed in Japan © NECCoronation 1999 NEC


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PDF 2SC5507 2SC5507 2SC5507-T2
transistor NEC D 882 p

Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Text: m e n i No. P 1 0 3 9 9 E J2 V 0 D S 0 0 (2nd e d itio n ) ( P re v io u s No. T D -2 4 1 1 ) D ale P u b lish e d J u ly 1995 P P rinted in J a p a n © NEC Corporation 1993 NEC ELECTRICAL , DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON , T A L P O W E R D IS S IP A T IO N vs. A M B IE N T T E M P E R A T U R E 50 P t - Total Power , Current - mA GAIN B AN D W ID TH P R O D U C T vs. IN S E R T IO N G A IN vs. COLLECTOR C U RREN T


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PDF 2SC5011 2SC5011-T1 transistor NEC D 882 p 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Text: tandard qu ality grade, they should con tact an NEC sales re p re se n ta tive in advance. A n ti-ra d io , DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF O S C /M IX . , B ase V oltage C o lle cto r C urrent T o ta l Pow er D issipation Jun ction T e m p e ra tu re S to , -70.6 -73.7 -76.9 -80.2 -83.5 -86.9 -90.2 -93.4 7 NEC 2SC4570 No part of th is d o cu m e n t may be cop ied o r rep ro d u ce d in any form o r by any m eans w ith o u t the p rio r w ritte n


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PDF 2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
2001 - C10535E

Abstract: NE52418 NE52418-T1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , . DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52418 L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT (Heterojunction Bipolar Transistor , employed (SOT-343 style) · Grounded emitter transistor APPLICATIONS · Mobile communication terminals , Remark To order evaluation samples, consult your NEC sales representative. Part number for sample order


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1997 - transistor NEC b 882

Abstract: transistor NEC b 882 p 2SC4186 NEC 2562 NPN SILICON EPITAXIAL TRANSISTOR
Text: DATA SHEET SILICON TRANSISTOR 2SC4186 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4186 is an NPN silicon epitaxial transistor intended for use in millimeters as a UHF oscillator and a mixer in a tuner of a TV receiver , (2nd edition) Date Published February 1996 P Printed in Japan © 1996 2SC4186 TYPICAL , ­55.0 ­57.4 ­59.8 ­62.2 ­64.8 ­67.8 ­71.7 ­76.4 ­83.2 ­ 88.2 ­94.2 2SC4186 [MEMO] 7


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PDF 2SC4186 2SC4186 transistor NEC b 882 transistor NEC b 882 p NEC 2562 NPN SILICON EPITAXIAL TRANSISTOR
transistor 2sc 1586

Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA , V V V V ebo Ic mA mW °C 0C Pt T, T s tg D o c u m e n i No. P 1 0 3 8 5 E J2 V 0 D S 0 0 (2nd e d itio n ) ( P re v io u s No. T D -2 3 9 9 ) D ale P u b lish e d J u ly 1995 P P rinted in J a p a n © N E CC o rp o ratio n 1993 NEC ELECTRICAL CHARACTERISTICS (T a = 25 C) C H A R , docum ent. NEC C orporation does not assum e any lia b ility fo r in frin g e m e n t of patents, c o p


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PDF 2SC5006 2SC5006 transistor 2sc 1586 B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
ac 51 0865 75 849

Abstract: 7082 B amplifier 7082 B ic audio amplifier
Text: continuous effort to e n h a n c e th e re lia b ility of its sem ico n d u cto r devices, the p o ssibility , roperty arising from a defect in an NEC sem ico n d u cto r device, custom ers m ust incorporate su fficie , for life support, etc. The quality grade of NEC devices is "S tandard" unless otherw ise sp e cifie d in NEC 's D ata S heets or Data Books. If custom ers intend to use NEC devices for a pplications o , DATA SHEET SILICON TRANSISTOR uPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL


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PDF uPA807T 2SC5179) PA807T uPA807T-T1 ac 51 0865 75 849 7082 B amplifier 7082 B ic audio amplifier
1997 - 2SC3585

Abstract: No abstract text available
Text: DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON , silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band , nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication , 0.147 S11 23.1 40.6 51.1 58.9 65.6 73.1 82.2 84.9 88.2 2.726 70.5 0.188 58.7 , any form or by any means without the prior written consent of NEC Corporation. NEC Corporation


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PDF 2SC3585 2SC3585
M 9639 transistor

Abstract: application IC 7411 SiS 486
Text: 10 P in - Input Power - dB f - Frequency - GHz P out - Output Power - d B P in - Input Power , PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD , subject to change without notice. Document No. P I 3 0 8 t EJ1VO0SOO (1 st edition) Date Published February 1998 N CP(K) Printed in Japan © NEC Corporation 1998 NEC H fe 2SC5455 , 0.5 Ic - 1 2 5 10 20 Collector Current - mA 50 100 2 Preliminary Data Sheet NEC GAIN


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PDF
1997 - Not Available

Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES · Low VDD Use · , . Document No. P10586EJ3V0DS00 (3rd edition) Date Published June 1996 P Printed in Japan 0 to 0.1 , 0.005 0.002 0.002 0.003 0.011 0.010 S12 ANG ­ 88.2 ­121.6 67.0 71.3 117.8 ­23.3 ­162.4 37.8 ­146.3 ­144.3


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1997 - transistor NEC D 882 p

Abstract: nec d 882 p transistor 2SC4186
Text: ­57.4 ­59.8 ­62.2 ­64.8 ­67.8 ­71.7 ­76.4 ­83.2 ­ 88.2 ­94.2 d in ue nt co is , To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , . DATA SHEET SILICON TRANSISTOR 2SC4186 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD uc t DESCRIPTION PACKAGE DIMENSIONS The 2SC4186 is an NPN silicon epitaxial transistor intended for use in millimeters as a UHF oscillator and a mixer in a tuner of a


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PDF
1997 - TD-2411

Abstract: NEC 3552 2SC5011 2SC5011-T1 2SC5011-T2 702 mini transistor P1039 1357 transistor NEC
Text: DATA SHEET SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS · Small Package · High Gain , responsible NEC person, if you require evaluation sample. It is available for 50 pcs. one unit sample lot , (2nd edition) (Previous No. TD-2411) Date Published July 1995 P Printed in Japan © 1993 , MAG S11 .957 .921 . 882 .853 .809 .805 .787 .776 .775 .769 .763 .760 .760 .759 .758


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PDF 2SC5011 2SC5011-T1 2SC5011-T2 TD-2411 NEC 3552 2SC5011 2SC5011-T1 2SC5011-T2 702 mini transistor P1039 1357 transistor NEC
1997 - NEC JAPAN 237 521 02

Abstract: 3563 1231 2SC5014 2SC5015 2SC5015-T1 2SC5015-T2 t83 230 02 TD-7938
Text: DATA SHEET SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters · Small , 0.1 0.4 +0.1 ­0.05 0.15 +0.1 ­0.05 0 to 0.1 * Please contact with responsible NEC person , ) (Previous No. TD-7938) Date Published August 1995 P Printed in Japan © 1993 2SC5015 ELECTRICAL , ­13.5 ­19.7 ­26.2 ­32.8 ­39.1 ­45.9 ­51.7 ­58.0 ­64.0 ­70.1 ­76.4 ­82.4 ­ 88.2 ­94.1 ­100.2


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PDF 2SC5015 2SC5015-T1 2SC5015-T2 05Special: NEC JAPAN 237 521 02 3563 1231 2SC5014 2SC5015 2SC5015-T1 2SC5015-T2 t83 230 02 TD-7938
2001 - Transistor NEC K 3654

Abstract: transistor on 4409 3019 Transistor NEC k 3654
Text: excellent buffer transistor , featuring low noise and high gain. NEC 's new ultra small TD package is ideal , PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR UPA861TD FEATURES · · · · LOW , (Top View) 0.15±0.05 1 6 0.4 TWO DIFFERENT DIE TYPES: Q1 - Ideal buffer amplifier transistor Q2 - Ideal oscillator transistor 0.8 C1 1 Q1 6 B1 vX 2 5 E1 4 0.4 2 , transistor chip is independently mounted and easily configured for oscillator/ buffer amplifier and other


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PDF UPA861TD UPA861TD NE894 NE687 Transistor NEC K 3654 transistor on 4409 3019 Transistor NEC k 3654
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