The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor MW 882 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor MW 882

Abstract: 5v ZENER DIODE zener diode 5v Zener Diode SOT-, 5v, 200mA DFN1006-2 PDTA144E DFN1006 DFN1006-3 Zener Diode SOT-23, 6v, 200mA Zener diode with 9v
Text: times more power per area ( mW / mm2) compared to standard SOT-23 packages. Typical Power Density Package ( mW /mm2) 2 DFN (Dual Flat No Leads): Leadless package type: SOD-323 65mW/mm SOT , Pre-Biased PNP Transistors 47k 47k 250mW 100mA DFN1006-3 Bipolar Transistor Product , applications such as mobile phones, digital audio players and LCD modules Bipolar Transistor Product , NPN Bipolar Transistor 250mW 45V 100mA 200 450 5V 2mA DFN1006-3 BC857BLP


Original
PDF DFN1006 DFN1006 1N4448HLP BAS16LP BAS40LP BAT54LP BAT54LPS transistor MW 882 5v ZENER DIODE zener diode 5v Zener Diode SOT-, 5v, 200mA DFN1006-2 PDTA144E DFN1006-3 Zener Diode SOT-23, 6v, 200mA Zener diode with 9v
2010 - diode sot-23 marking AG

Abstract: 706 TRANSISTOR sot-23 transistor 702g CMPDM7002AG sot-23 Marking ag sot-23 MARKING CODE 54 sot23 material composition transistor MW 882
Text: versions of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor , manufactured by the N-Channel , 1.5 350 -65 to +150 357 UNITS V V V mA mA A A mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA , 0.586 0.568 0.018 0.176 0.135 0.035 0.17 (ppm) 27,059 2,471 149, 882 104,118 7,059 468,706 137, 882 68,941 6,941 6,941 530,824 68,941 66,824 2,118 20,706 15, 882 4,118 20,000 7439-89-6 14.99% 7440-02-0


Original
PDF CMPDM7002A CMPDM7002AG* CMPDM7002AG 2N7002 CMPDM7002A: C702A OT-23 diode sot-23 marking AG 706 TRANSISTOR sot-23 transistor 702g sot-23 Marking ag sot-23 MARKING CODE 54 sot23 material composition transistor MW 882
1996 - transistor MW 882

Abstract: ILD766 IL766 IL766-2
Text: ) .150 (3.81) 4° Typ. 18° Typ. .010 (.25) .014 (.35) .300 (7.62) .347 ( 8.82 ) .020 (.051 , °C Ambient (LED Plus Detector) Single Channel . 250 mW Dual Channel. 400 mW Derate Linearly from 25°C Single Channel . 3.3 mW /°C Dual Channel . 5.3 mW /°C Creepage , °C . 100 mW Derate Linearly from 25°C . 1.33 mW /°C 1 .248 (6.30) .256 (6.50


Original
PDF IL766 ILD766 IL/ILD766-1: IL/ILD766-2: E52744 IL/ILD766 transistor MW 882 ILD766 IL766 IL766-2
2002 - sled motor

Abstract: 4851-4 EN4851 2Sc3650 equivalent block diagram of VCD and its functions SB07-03C servo iai sanyo sled
Text: associated 5.0 V CD LSIs, including the DSP and microprocessor. (The drive transistor , L, Di and C are , PNP transistor , L, Di and C are external components: step-down circuit) · System start and stop can , ICD 150 mA Allowable power dissipation Pd max 800 mW Operating temperature , Operating output Unit V 150 mW Electrical Characteristics at Ta = 25°C, VCC = 2.4 V Parameter , Circuit] Output voltage VCD NPN transistor drive current Ino 4.75 3.0 V mA Load


Original
PDF EN4851 LB8107M LB8107M 3148-QFP44MA LB8107M] LB81se: sled motor 4851-4 EN4851 2Sc3650 equivalent block diagram of VCD and its functions SB07-03C servo iai sanyo sled
1998 - Not Available

Abstract: No abstract text available
Text: the associated 5.0 V CD LSIs, including the DSP and microprocessor. (The drive transistor , L, Di and , drive PNP transistor , L, Di and C are external components: step-down circuit) • System start and , circuit output current ICD 150 mA Allowable power dissipation Pd max 800 mW , 2.0 VCC 2.4 4.0 Operating output Unit V 150 mW Electrical Characteristics at , 27 mA 5.0 5.25 [Step-up Circuit] Output voltage VCD NPN transistor drive current


Original
PDF EN4851 LB8107M LB8107M 3148-QFP44MA LB8107M]
2008 - Not Available

Abstract: No abstract text available
Text: ZXTP03200BG 200V PNP Low VCE(sat) transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135m PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state losses making , 150 Unit V V V A A A W mW /°C W mW /°C W mW /°C W mW /°C W mW /°C °C Operating and Storage , Futian CBD, Shenzhen, China Tel: (+86) 755 882 849 88 Fax: (+86) 755 882 849 99 Korea 6 Floor


Original
PDF ZXTP03200BG OT223 -200V -160mV OT223 ZXTP03200BGTA ZXTP03200BG A1103-04, 522-ZXTP03200BGTA ZXTP03200BGTA
Silonex

Abstract: NSL-892 F394 NSL-710 transistor 3401A NSL-781 NSL-791 NSL-792 NSL-810 T-25
Text: stability, linearity, and compatibility with simple transistor amplifiers also well suit them for low light , >K Tungsten (25 mW /cm') - . Typ. Min. Typ. Dark Current „ (|i.A) » Capacitance (a- V = 1 V , 0.38 10 0.095 10.90 NSL- 882 0.44 0.58 0.28 0.3 2.5 5.0 0.55 10 0.148 7.50 NSL-891 0.65 0.80 0.28 0.3 , t 3 O OC O fe o X V) IRRAOIANCE ( mW /cm2) 10 16 20 100 200 300 ILLUMINATION (Ftc) 400 25 , current is extremely linear over wide ranges of illumination. Ui § § t O ÇÇ o IRRAOIANCE ( mW /cm2


OCR Scan
PDF SSSS71 Silonex NSL-892 F394 NSL-710 transistor 3401A NSL-781 NSL-791 NSL-792 NSL-810 T-25
2008 - PNP 200V 2A SOT89

Abstract: TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A
Text: ZXTP03200BZ 200V PNP Low VCE(sat) transistor in SOT89 Summary BVCEO > -200V BVECO > -2V IC , outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state losses , VEBO -7 V IC -2 A IB -1 A ICM -5 A PD 1.1 8.8 W mW /°C PD 1.8 14.4 W mW /°C PD 2.4 19.2 W mW /°C PD 4.46 35.7 W mW /°C PD 38.7 309.6 W mW /°C Tj, Tstg -55 to 150 °C Symbol Value Unit RJA 117 °C/W


Original
PDF ZXTP03200BZ -200V -160mV ZXTP03200BZTA D-81541 A1103-04, PNP 200V 2A SOT89 TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A
2008 - TS16949

Abstract: ZXTP03200BG ZXTP03200BGTA marking sot223 GY
Text: ZXTP03200BG 200V PNP Low VCE(sat) transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC , outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state losses , -5 A PD 1.25 10 W mW /°C PD 1.65 13.2 W mW /°C PD 3 24 W mW /°C PD 5.8 46.5 W mW /°C PD 11.9 95.2 W mW /°C Tj, Tstg -55 to 150 °C Symbol , , Shenzhen, China Tel: (+86) 755 882 849 88 Fax: (+86) 755 882 849 99 6 Floor, Changhwa B/D, 1005-5


Original
PDF ZXTP03200BG OT223 -200V -160mV OT223 ZXTP03200BGTA D-81541 A1103-04, TS16949 ZXTP03200BG ZXTP03200BGTA marking sot223 GY
2008 - Not Available

Abstract: No abstract text available
Text: ZXTP03200BG 200V PNP Low VCE(sat) transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC , outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state losses , -5 A PD 1.25 10 W mW /°C PD 1.65 13.2 W mW /°C PD 3 24 W mW /°C PD 5.8 46.5 W mW /°C PD 11.9 95.2 W mW /°C Tj, Tstg -55 to 150 °C , Road Futian CBD, Shenzhen, China Tel: (+86) 755 882 849 88 Fax: (+86) 755 882 849 99 6 Floor


Original
PDF ZXTP03200BG OT223 -200V -160mV OT223 D-81541 A1103-04,
SILONEX INC

Abstract: NSL-810 NSL-792 60N70
Text: cells' inherent stability, linearity, and compatibility with simple transistor amplifiers also well suit , No. 6( H = 500 Ftc, 2870°K Tungsten (25 mW /cm') Typ. D a rkC u rre n t Capacitance (l-A , I NSL-710 NSL-720 NSL-751 NSL-781 NSL-782 NSL-791 NSL-792 NSL-810 NSL-820 NSL-851 NSL-881 NSL- 882 , 22.7 27.3 2.28 11.40 7.45 5.40 2.83 I 1 19.40 26.40 2.30 10.90 7.50 5.45 2.90 IRRADIANCE ( mW /cm2) IRRADIANCE ( mW /cm2) U J t 3 O Ç Ç o z U J a. Î s O c / 100 200 300


OCR Scan
PDF 0G00310 SILONEX INC NSL-810 NSL-792 60N70
2008 - Not Available

Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V(BR)CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low , =25°C(*) PD 350 mW Operating and storage temperature Tj:Tstg 55 to +150 °C NOTES , , China Tel: (+86) 755 882 849 88 Fax: (+86) 755 882 849 99 6 Floor, Changhwa B/D, 1005-5


Original
PDF ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541
2008 - Not Available

Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V(BR)CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation , VCEO VEBO ICM IC IBM PD Tj:Tstg Limit 80 80 60 5.0 2 1 1 350 55 to +150 Unit V V V V A A A mW °C , ) 755 882 849 88 Fax: (+86) 755 882 849 99 Korea 6 Floor, Changhwa B/D, 1005-5 Yeongtong-dong


Original
PDF ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA ZXTN2038FTC D-81541
2010 - CMPDM7002AG

Abstract: SOT-23 marking HG
Text: versions of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor , manufactured by the N-Channel , 1.5 350 -65 to +150 357 UNITS V V V mA mA A A mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA , 0.586 0.568 0.018 0.176 0.135 0.035 0.17 (ppm) 27,059 2,471 149, 882 104,118 7,059 468,706 137, 882 68,941 6,941 6,941 530,824 68,941 66,824 2,118 20,706 15, 882 4,118 20,000 7439-89-6 14.99% 7440-02-0


Original
PDF CMPDM7002A CMPDM7002AG* CMPDM7002AG 2N7002 CMPDM7002A: C702A OT-23 /\\blrsndf001\data\production\PARM\Common SOT-23 marking HG
2008 - 4018 datasheet

Abstract: ic 4018 4891 TRANSISTOR TS16949 ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC marking 312 SOT23 zetex
Text: A Product Line of Diodes Incorporated ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V(BR)CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation , -1 A Peak base current IBM -1 A Power dissipation @ TA=25°C(*) PD 350 mW , , China Tel: (+86) 755 882 849 88 Fax: (+86) 755 882 849 99 6 Floor, Changhwa B/D, 1005-5


Original
PDF ZXTP2041F -500mV ZXTN2040F ZXTP2041FTA ZXTP2041FTC D-81541 4018 datasheet ic 4018 4891 TRANSISTOR TS16949 ZXTN2040F ZXTP2041F ZXTP2041FTA marking 312 SOT23 zetex
2008 - TS16949

Abstract: ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813
Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V(BR)CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low , A Peak base current IBM 1 A Power dissipation @ TA=25°C(*) PD 350 mW , , Shenzhen, China Tel: (+86) 755 882 849 88 Fax: (+86) 755 882 849 99 6 Floor, Changhwa B/D, 1005-5


Original
PDF ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541 TS16949 ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813
1998 - MP4T243

Abstract: Bipolar Transistor ma4t24335 Transistor 35 MICRO-X S21E MP4T24335 Silicon Bipolar Transistor MICRO-X low noise transistors microwave ic chip ic 4410 GHZ micro-X Package
Text: .00 Features ·Low Phase Noise Oscillator Transistor ·200 mW Driv er Amplifier Transistor ·Operation to 8 GHz , Chip This industry standard transistor is av ailable as a chip for hybrid oscillator circuits or in , MP4T243 transistor is emitter ballasted using ion implanted polysilicon resistors to prev ent emitter , -65 to +200 PT mW 1000 400 T CP ° C 150 150 Parameter 1 Collector-Base , Moderate Power High fT NPN Silicon Transistor MP4T243 Series V2.00 Electrical Specifications @ 25


Original
PDF MP4T243 MP4T24300 MP4T24335 Bipolar Transistor ma4t24335 Transistor 35 MICRO-X S21E MP4T24335 Silicon Bipolar Transistor MICRO-X low noise transistors microwave ic chip ic 4410 GHZ micro-X Package
Not Available

Abstract: No abstract text available
Text: .00 Features • Low Phase Noise Oscillator Transistor • 200 mW Driver Amplifier Transistor • Operation , Styles Chip This industry standard transistor is available as a chip for hybrid oscillator , metalization process. The MP4T243 transistor is emitter ballasted using ion implanted polysilicon resistors to , -65 to +200 -65 to +200 PT mW 1000 400 TCP °C 150 150 Parameter 1 , Moderate Power High fT NPN Silicon Transistor MP4T243 Series V2.00 Electrical Specifications @ 25Â


Original
PDF MP4T243 MP4T24300 MP4T24335
Not Available

Abstract: No abstract text available
Text: M4N26 6-Pin DIP Optoisolators Transistor Output STYLE 1 PLASTIC The M4N26 device consists of a , 3D - D5 Vr mW mW /°C PIN 1. LED ANODE 2. LED CATHODE 3. N.C. 4. EMITTER 5. COLLECTOR 6. BASE OUTPUT TRANSISTOR Collector-Emitter Voltage , 1.76 Volts Volts Volts mA mW mW /°C - TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage , Vac(pk) PD 250 2.94 - 5 5 t o +100 - 5 5 t o +150 260 mW mW /°C °C °C °C ta Tstg 1


OCR Scan
PDF M4N26/D M4N26 M4N26
til117 motorola

Abstract: No abstract text available
Text: BABT M TIL117 6-Pin DIP Optoisolator Transistor Output STYLE 1 PLASTIC The MTIL117 device , °C Symbol Value Unit VR If PD 6 60 100 1.41 Volts mA mW mW /°C PIN 1. 2. 3. 4. 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE OUTPUT TRANSISTOR Collector-Emitter Voltage , Volts mA mW mW /°C 'c PD TOTAL DEVICE ím m ííM ím é ím m ííi R^M W I i Isolation Surge , mW mW /°C °C °C °C ta Tstg tl i n 1. Isolation surge voltage is an Internal device


OCR Scan
PDF MTIL117/D TIL117 MTIL117 MTIL117 til117 motorola
ISO220

Abstract: No abstract text available
Text: ! BABT M4N25 6-Pin DIP Optoisolators Transistor Output STYLE 1 PLASTIC The M4N25 device consists , Output Detector Derate above 25°C OUTPUT TRANSISTOR Collector-Emitter Voltage Emitter-Collector Voltage , 2D-^ X|_k > 3.J,. D5 CM Vr ^ ;í:íff; . Volts mA mW mW /°C 3D - PIN 1. LED ANODE ' , 50 150 1.76 Volts Volts Volts mA mW mW /°C v CBO ic PD v ISO PD ta 7500 250 2.94 -5 5 to +100 -5 5 to +150 260 Vac(pk) mW mW /°C °C °C °C Tstg tl Soldering Temperature (10 sec, 1/16


OCR Scan
PDF M4N25/D M4N25 M4N25 ISO220
transistor MW 882

Abstract: 8 channel optocouplers
Text: Power Dissipation at 25°C Single Channel. 200 mW Dual Channel. . 90 mW Derate Linearly from 25°C 2.6 mW /°C Single Channel. 1.2 mW /°C Dual Channel. Detector (Each Channel) Collector-Emitter , . 70 V Power Dissipation at 25°C . 100 mW Derate Linearly from 25°C. 1.33 mW /°C Package Isolation Test Voltage (t= 1 sec ) .7500 VACpk/5300


OCR Scan
PDF IL/1LD766-1: IL/ILD766-2: E52744 IL766 ILD766 JL/ILD766 ILVILD766 IL/ILD766 transistor MW 882 8 channel optocouplers
882 transistor

Abstract: omni spectra sma transistor power rating 5w transistor 882 ATC100A mallory 25 uF capacitor data sheet PH2323-5 omni spectra fixture
Text: PH2323-5 CW Power Transistor 5W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features · NPN silicon microwave power transistor · Common base configuration · Class C , information contained herein without notice. PH2323-5 CW Power Transistor 5W, 2.3 GHz M/A-COM , 2.024" 1.964" 1.040" 1.727" 1.250" 1.000" .965" .944" . 882 " .886" .488" , " .950" .869" . 882 " .900" 1.500" 1.083" .987" 1.665" 1.535" 1.475" 1.013" 2.250


Original
PDF PH2323-5 882 transistor omni spectra sma transistor power rating 5w transistor 882 ATC100A mallory 25 uF capacitor data sheet PH2323-5 omni spectra fixture
C 5241

Abstract: H11D1 SFH640 SFH640-1 SFH640-2 SFH640-3
Text: .114(290) .130(3.30) is'iyp-^y -.010 (.25) typ, _.3Q0(7.62)_ .347 ( 8.82 ) Maximum Ratings (TA , Dissipation. 100 mW Detector Collector-Emitter , Power Dissipation. 300 mW Package . , IO-1 5 «■5 10' 5mAI0! l;/:nA—> Figure 5. Transistor capacitances (typ.) Ta=25«C, f-1 MHz , leakage current (typ.) IF=0, RBE-1 MW , l0ER=f(VCE) 123 139 173 vCE/v-> Figure 7. Permissible power


OCR Scan
PDF SFH640-1, SFH640-2, SFH640-3* E52744 C 5241 H11D1 SFH640 SFH640-1 SFH640-2 SFH640-3
2001 - C10535E

Abstract: NE52418 NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN
Text: DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52418 L to S BAND LOW NOISE AND HIGH , Transistor ) developed for L to S band mobile communication equipment. FEATURES · Ideal for low noise and , minimold package employed (SOT-343 style) · Grounded emitter transistor APPLICATIONS · Mobile , 0.3 mA Ptot 150 mW Junction Temperature Tj +125 °C Storage Temperature , Dissipation Ptot ( mW ) 250 25 50 100 75 125 6 4 2 150 0.5 0 1.0


Original
PDF NE52418 NE52418 OT-343 NE52418-T1 C10535E NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN
Supplyframe Tracking Pixel