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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor M6 Datasheets Context Search

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2006 - AD8563

Abstract: MO-187-BA RM-10 AD8553 1200p100 AD8563ARMZ-REEL AD85631 transistor M6
Text: External Resistor R1, resulting in conversion of the input voltage to a signal current. Transistor M3 to Transistor M6 transfer twice this signal current to the inverting input of the op amp A1. Amplifier A1 and , (without correction). The circuit consists of a voltage-to-current amplifier (M1 to M6 ), followed by a , each supply pin to ground. VCC C2 I I M5 M6 R1 I ­ IR1 IR1 = I + IR1 (VINP ­


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PDF AD8563 10-Lead MO-187-BA RM-10) AD8563ARMZ-R21 AD8563ARMZ-REEL1 AD8563 MO-187-BA RM-10 AD8553 1200p100 AD8563ARMZ-REEL AD85631 transistor M6
2008 - transistor M6

Abstract: AD8293G160 AD8293G80 MO-178-BA footprint AD8293G80ARJZ-R2 AD8293Gxx
Text: input voltage to a signal current. Transistor M3 to Transistor M6 transfer twice this signal current to , voltage-to-current amplifier (M1 to M6 ), followed by a current-to-voltage amplifier (R2 and A1). Application of a , M5 M6 R1 I ­ IR1 IR1 = VINP M1 2I R2 I ­ IR1 R1 VBIAS M2 VINN M3 , MO-178-BA Figure 22. 8-Lead Small Outline Transistor Package [SOT-23] (RJ-8) Dimensions shown in


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PDF AD8293G80/AD8293G160 AD8293Gxx OT-23 transistor M6 AD8293G160 AD8293G80 MO-178-BA footprint AD8293G80ARJZ-R2 AD8293Gxx
2006 - Not Available

Abstract: No abstract text available
Text: voltage to a signal current. Transistor M3 to Transistor M6 transfer twice this signal current to the , voltage-to-current amplifier (M1 to M6 ), followed by a current-to-voltage amplifier (R2 and A1). Application of a , connected from each supply pin to ground. VCC C2 I I M5 M6 R1 I – IR1 IR1 = I +


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PDF AD8563 10-Lead MO-187-BA RM-10) AD8563ARMZ-R21 AD8563ARMZ-REEL1
2005 - AD8553

Abstract: AD8553ARMZ AD8553ARMZ-REEL MO-187-BA RM-10 1725VG transistor M6
Text: The circuit consists of a voltage-to-current amplifier (M1 to M6 ), followed by a current-to-voltage , Resistor R1, resulting in conversion of the input voltage to a signal current. Transistor M3 to Transistor M6 transfer twice this signal current to the inverting input of the op amp A1. Amplifier A1 and , . VCC C2 I I M5 M6 R1 I ­ IR1 IR1 = R1 2I VOUT = VREF + I + IR1 (VINP ­


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PDF AD8553 10-Lead AD8553 MO-187-BA 91709-A RM-10) AD8553ARMZ AD8553ARMZ-REEL AD8553ARMZ AD8553ARMZ-REEL MO-187-BA RM-10 1725VG transistor M6
2005 - accuracy of K type thermocouple

Abstract: bsc physics books 1200p100 RM-10 MO-187-BA AD8553ARMZ-REEL AD8553ARMZ AD8553 schematic weigh scale low cost schematic weigh scale
Text: The circuit consists of a voltage-to-current amplifier (M1 to M6 ), followed by a current-to-voltage , Resistor R1, resulting in conversion of the input voltage to a signal current. Transistor M3 to Transistor M6 transfer twice this signal current to the inverting input of the op amp A1. Amplifier A1 and , . VCC C2 I I M5 M6 R1 I ­ IR1 IR1 = R1 2I VOUT = VREF + I + IR1 (VINP ­


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PDF AD8553 10-Lead AD8553 amplif15 MO-187-BA 91709-A RM-10) AD8553ARMZ accuracy of K type thermocouple bsc physics books 1200p100 RM-10 MO-187-BA AD8553ARMZ-REEL AD8553ARMZ schematic weigh scale low cost schematic weigh scale
2005 - 1200p100

Abstract: AD8553 AD8553ARMZ-R2 MO-187-BA RM-10
Text: voltage to a signal current. Transistor M3 to Transistor M6 transfer twice this signal current to the , voltage-to-current amplifier (M1 to M6 ), followed by a current-to-voltage amplifier (R2 and A1). Application of a , capacitor should be connected from each supply pin to ground. VCC C2 I I M5 M6 R1 I ­ IR1


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PDF AD8553 10-Lead AD8553 MO-187-BA RM-10) AD8553ARMZ-R2 AD8553ARMZ-REEL1 1200p100 MO-187-BA RM-10
2008 - Not Available

Abstract: No abstract text available
Text: voltage to a signal current. Transistor M3 to Transistor M6 transfer twice this signal current to the , amplifier (M1 to M6 ), followed by a current-to-voltage amplifier (R2 and A1). Application of a differential , near dc than standard low noise instrumentation amplifiers. VCC C2 I I M5 M6 R1 I â , COMPLIANT TO JEDEC STANDARDS MO-178-BA Figure 22. 8-Lead Small Outline Transistor Package [SOT-23] (RJ


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PDF AD8293G80/AD8293G160 AD8293Gxx OT-23
2005 - RM-10

Abstract: AD8553 AD8553ARMZ-R2 MO-187-BA
Text: The circuit consists of a voltage-to-current amplifier (M1 to M6 ), followed by a current-to-voltage , Resistor R1, resulting in conversion of the input voltage to a signal current. Transistor M3 to Transistor M6 transfer twice this signal current to the inverting input of the op amp A1. Amplifier A1 and , . VCC C2 I I M5 M6 R1 I ­ IR1 IR1 = I + IR1 (VINP ­ VINN ) R1 M1 2I 2IR1


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PDF AD8553 10-Lead MO-187-BA RM-10) AD8553ARMZ-R2 AD8553ARMZ-REEL1 RM-10 AD8553 MO-187-BA
2005 - Not Available

Abstract: No abstract text available
Text: voltage to a signal current. Transistor M3 to Transistor M6 transfer twice this signal current to the , voltage-to-current amplifier (M1 to M6 ), followed by a current-to-voltage amplifier (R2 and A1). Application of a , connected from each supply pin to ground. VCC C2 I I M5 M6 R1 I – IR1 IR1 = R1


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PDF AD8553 10-Lead AD8553 MO-187-BA 91709-A RM-10) AD8553ARMZ AD8553ARMZ-REEL
CSG3001-18A04

Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Text: 1. GTO-thyristors ( press-pack type) 2. Transistor modules 3. Thyristors (press-pack and module , (kN) 40 d * h (mm) 120 * 26 2. REPLACEMENT TABLE FOR TRANSISTOR MODULES On the following table are listed the transistor (GTR) modules, which are approved for SAMI STAR frequency converters , . 2.1 I = 75 A C V CE Dual transistor = 1000 V Standard spec. 5351 3492 Used in , Toshiba transistor MG75M2CK1 (code 0981 0005) was used. This transistor should not be used. * Note: -


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PDF 400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
KC224575

Abstract: KT224515 KT224510 KC224503 KC324510 KC-224575 pj 1339 KR224505 KR224503 ke721k03
Text: ) 41.14.14 Transistor Modules Powerex Darlington Transistor Modules are in wide use in inverter and , . Darlington Transistor Selector Table* Non Type W N yC E oM 15 isolated 300 200 Fast Single F or A 1000 600 , High Beta Darlington Transistor Selector Table* Type ' c< a \ vceo < v) Single S 600 1200 600 , 0.787 0.630 0.512 0.354 0.256 0.256 Dia. 0.157 0.118 M4 Metric M6 Metric 108.0 Max. 93.0 ± 0.3 62.0 Max. 48.0 ± 0.3 41.5 Max. 36.0 Max. 29.0 25.5 Max. 21.0 20.0 16.0 13.0 9.0 6.5 6.5 Dia. 4.0 3.0 M4 M6 inches


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PDF BP107, KET24505HB KE921205HB KET24575HB KET24510HB KC224575 KT224515 KT224510 KC224503 KC324510 KC-224575 pj 1339 KR224505 KR224503 ke721k03
KD621K20

Abstract: No abstract text available
Text: 0.256 Min. 6.5 Min. Q 0.256 dia. 6.5 Dia. R 0.236 6 S M6 Metric M6 T 0.039 1 Dual Darlington Transistor Module 200 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are , two Darlington Transistors with each transistor having a reverse parallel connected high-speed diode , , Pennsylvania 15697-1800 (412) 925-7272 KD621K20 Dual Darlington Transistor Module 200 Amperes/1000 Volts , Amperes Diode Surge Current •fsm 2000 Amperes Power Dissipation (Each Transistor ) Pt 1560 Watts


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PDF KD621K20 Amperes/1000 KD621K20
D-60

Abstract: KD421210A7 g0630
Text: R 0.118 3 S 0.276 7 T 0.256 Dia. 6.5 Dia. U M6 Metric M6 KD421210A7_ Dual Darlington Transistor Module 100 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high , Transistor ) Pt 800 Watts Max. Mounting Torque M6 Terminal Screws - 26 in.-lb. Max. Mounting Torque M6 , Darlington Transistors with each transistor having a reverse parallel connected high-speed diode. Features , Transistor Module 100 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified


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PDF KD421210A7_ Amperes/1200 D-60 KD421210A7 g0630
KD621230

Abstract: D1220 300 volt 5 ampere transistor a 31 diode oas transistors d100
Text: . 6.5 Min. R 0.256 Min. 6.5 Min. S 0.236 6 T M6 Metric M6 U 0.216 5.5 V 0.039 1 Dual Darlington Transistor Module 300 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are , two Darlington Transistors with each transistor having a reverse parallel connected high-speed diode , , Pennsylvania 15697-1800 (412) 925-7272 KD621230 Dual Darlington Transistor Module 300 Amperes/1200 Volts , Diode Surge Current 'fsm 3000 Amperes Power Dissipation (Each Transistor ) Pt 1980 Watts Max


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PDF KD621230 Amperes/1200 D-100 KD621230 D1220 300 volt 5 ampere transistor a 31 diode oas transistors d100
D73 transistor

Abstract: D73 -Y KD421215A7 Transistor 3A
Text: 25 U M6 Metric M6 K 0.591 15 Description: The Powerex Dual Darlington Transistor Modules are , 1500 Amperes Power Dissipation (Each Transistor ) Pt 1000 Watts Max. Mounting Torque M6 Terminal , ) 925-7272 Dual Darlington Transistor Module 150 Amperes/1200 Volts OUTLINE DRAWING R — n n [ -— R , two Darlington Transistors with each transistor having a reverse parallel connected high-speed diode , Darlington Transistor Module 150 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise


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PDF KD421215A7 Amperes/1200 D73 transistor D73 -Y KD421215A7 Transistor 3A
transistor D94

Abstract: transistor D95 KD621K30 ST DARLINGTON TRANSISTOR 10-6327 300 volt 16 ampere transistor
Text: M6 Metric M6 U 0.216 5.5 Description: The Powerex Dual Darlington Transistor Modules are high , ) 925-7272 Dual Darlington Transistor Module 300 Amperes/1000 Volts Outline Drawing Dimensions Inches , Darlington Transistors with each transistor having a reverse parallel connected high-speed diode. Features , 15697-1800 (412) 925-7272 KD621K30 Dual Darlington Transistor Module 300 Amperes/1000 Volts Absolute , Surge Current 'fsm 3000 Amperes Power Dissipation (Each Transistor ) Pt 1980 Watts Max. Mounting


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PDF KD621K30 Amperes/1000 transistor D94 transistor D95 KD621K30 ST DARLINGTON TRANSISTOR 10-6327 300 volt 16 ampere transistor
diode dual d92

Abstract: KD621220
Text: Current 'fsm 2000 Amperes Power Dissipation (Each Transistor ) Pt 1560 Watts Max. Mounting Torque M6 , ) 925-7272 DUdl DarHngtOfl Transistor Module 200 Amperes/1200 Volts Dimensions Inches Millimeters , . 6.5 Min. F 0.984 25 Q 0.256 dia. 6.5 Dia. G 0.846 21.5 R 0.236 6 H 0.827 21 S M6 Metric M6 J 0.669 17 T 0.039 1 Description: The Powerex Dual Darlington Transistor Modules are high power devices , Transistors with each transistor having a reverse parallel connected high-speed diode. Features: â


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PDF KD621220 Amperes/1200 diode dual d92 KD621220
KD421K15

Abstract: No abstract text available
Text: Dissipation (Each Transistor ) Pt 1000 Watts Max. Mounting Torque M6 Terminal Screws - 26 in.-lb. Max , ) 925-7272 Dual Darlington Transistor Module 150 Amperes/1000 Volts OUTLINE DRAWING K m U - MG THD (3 , 0.669 17 Q 0.315 8 R 0.118 3 S 0.276 7 T 0.256 Dia. 6.5 Dia. U M6 Metric M6 Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use in switching applications. The modules are isolated, consisting of two Darlington Transistors with each transistor having a


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PDF KD421K15 Amperes/1000 EIC20- 276FORWARD KD421K15
Not Available

Abstract: No abstract text available
Text: 15697-1800 (412) 925-7272 Dual Darlington Transistor Module 200 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use in switching applications. The modules are isolated, consisting of two Darlington Transistors with each transistor having , 0.984 25 Q G 0.846 21.5 R 0.236 H 0.827 21 S M6 Metric J 0.669 , . 6 M6 1 Type KD62 vC E0(sus) Volts (1000) Current Rating Amperes (X10) 1K 20


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PDF KD621K20 Amperes/1000 72T4b51
transistor s49

Abstract: KS624530 powerex ks62
Text: ) 925-7272 Single Darlington Transistor Module 300 Amperes/600 Volts OUTLINE DRAWING Q - DIA. (4 TYP.) T - , . 6.5 Q 0.256 Dia. 6.5 Dia. R 0.157 4 S 0.118 3 T M4 Metric M4 U M6 Metric M6 Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in switching applications. The modules are isolated, consisting of one Darlington Transistor with a reverse parallel , , Youngwood, Pennsylvania 15697-1800 (412) 925-7272 KS624530 Single Darlington Transistor Module 300


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PDF KS624530 Amperes/600 transistor s49 KS624530 powerex ks62
transistor S59

Abstract: KS621230A7 transistor b 1417 S-60 transistor S57 powerex ks62
Text: ) 925-7272 Single DSfHngtOfi Transistor Module 300 Amperes/1200 Volts OUTLINE DRAWING CONNECTION DIAGRAM , 29 S 0.118 3 H 1.004 25.5 T M4 Metric M4 J 0.827 21 U M6 Metric M6 K 0.787 20 Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in switching applications. The modules are isolated, consisting of one Darlington Transistor with a reverse parallel , Single Darlington Transistor Module 300 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless


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PDF KS621230A7_ Amperes/1200 transistor S59 KS621230A7 transistor b 1417 S-60 transistor S57 powerex ks62
KS621K30

Abstract: transistor S56 transistor s55 lem lc 300 KS621 powerex ks62 transistor VCEO 1000V
Text: SitlQlG DdfHngtOn Transistor Module 300 Amperes/1000 Volts OUTLINE DRAWING Outline Drawing Dimensions , . 6.5 Dia. R 0.157 4 S 0.118 3 T M4 Metric M4 U M6 Metric M6 Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in switching applications. The modules are isolated, consisting of one Darlington Transistor with a reverse parallel connected highspeed , 15697-1800 (412) 925-7272 KS621K30 Single Darlington Transistor Module 300 Amperes/1000 Volts Absolute


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PDF KS621K30 Amperes/1000 KS621K30 transistor S56 transistor s55 lem lc 300 KS621 powerex ks62 transistor VCEO 1000V
kd424520

Abstract: d79 motor i3003 a 103 m Transistor
Text: Dia. U M6 Metric M6 Description: The Powerex Dual Darlington Transistor Modules are high power , Power Dissipation (Each Transistor ) Pt 1250 Watts Max. Mounting Torque M6 Terminal Screws - 26 , DUSl DSfHngtOn Transistor Module 200 Amperes/600 Volts OUTLINE DRAWING C2EI U - MG THD I3 TYP , Transistors with each transistor having a reverse parallel connected high-speed diode. Features: â , (412) 925-7272 KD424520 Dual Darlington Transistor Module 200 Amperes/600 Volts Absolute Maximum


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PDF KD424520 Amperes/600 EIC20- kd424520 d79 motor i3003 a 103 m Transistor
1995 - DC solid state relay 12vdc

Abstract: opto-switch 307913 rs 306-061 Optical proximity sensor through beam 307-913 solid state variable relay 5A Solid State RELAY IC 306-061 proximity sensor interface optoswitch
Text: system q Photoheads available in M6 and M12 sizes as well as diffuse and through scan q Compatible , M6 or M12 diffuse, or through beam photoheads all connect in the same way as shown in Figures 3a , _8mA (typ.) Input sensor _Phototransistor M6 photoheads Body length _25mm Body thread _ M6 1.0 Lead length , /pulse selector should be inserted in the delay position. The NPN relay drive transistor collector is


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PDF 12Vdc 100mA DC solid state relay 12vdc opto-switch 307913 rs 306-061 Optical proximity sensor through beam 307-913 solid state variable relay 5A Solid State RELAY IC 306-061 proximity sensor interface optoswitch
2000 - fairchild marking codes sot-23

Abstract: marking of m7 diodes diode M7 KST812M6 marking M3 KST812M4 KST812M3 M7 component mark M7 M7 marking codes
Text: KST812M3/M4/M5/ M6 /M7 KST812M3/M4/M5/ M6 /M7 General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -50 Units V VCEO VEBO , Type KST812M3 KST812M 4 KST812M5 KST812M6 KST812M7 Mark M3 M4 M5 M6 M7 , / M6 /M7 Package Demensions ±0.10 ±0.10 1.30 0.40 ±0.03 2.40 0.45~0.60 0.20 MIN


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PDF KST812M3/M4/M5/M6/M7 OT-23 KST5088 fairchild marking codes sot-23 marking of m7 diodes diode M7 KST812M6 marking M3 KST812M4 KST812M3 M7 component mark M7 M7 marking codes
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