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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor Ic 1A datasheet NPN Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - J13007-2

Abstract: j13007 J-13007-2 transistor j13007 FJPF13007 F J13007-2 transistor J13007-1
Text: this datasheet Design center NPN Silicon Transistor Contents ·Features ·Product status/pricing , FJPF13007 High Voltage Fast-Switching NPN Power Transistor FJPF13007 High Voltage Fast-Switching NPN Power Transistor · High Voltage Capability · High Switching Speed · Suitable for Electronic , Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Symbol BVCEO IEBO hFE1 hFE2 , = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB =


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PDF FJPF13007 FJPF13007 O-220F FJPF13007H2TTU FJPF13007TU J13007-2 j13007 J-13007-2 transistor j13007 F J13007-2 transistor J13007-1
2000 - transistor crossreference

Abstract: transistor cross reference TIP47TU TIP50TU crossreference transistor TIP50 application notes transistor 2203 transistor Ic 1A NPN NPN Transistor TO220 vcc 150V
Text: Voltage : VCEO(sus) = 250 - 400V · 1A Rated Collector Current NPN Silicon Transistor Absolute Maximum , = 5V, IC = 0 VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A IC = 1A , IB = 0.2A VCE = 10V, IC = 1A VCE =10V , - NPN Silicon Transistor SEARCH | Parametric | Cross Reference space Fairchild Semiconductor , Products groups NPN Silicon Transistor Analog and Mixed Signal Contents Discrete Features | Applications , Product Folder - Fairchild P/N TIP47 - NPN Silicon Transistor back to top space space Home | Find


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PDF TIP47/48/49/50 TIP47 TIP48 TIP49 TIP50 TIP50 transistor crossreference transistor cross reference TIP47TU TIP50TU crossreference transistor TIP50 application notes transistor 2203 transistor Ic 1A NPN NPN Transistor TO220 vcc 150V
2009 - 1A 300V TRANSISTOR

Abstract: No abstract text available
Text: KSC5402D/KSC5402DT NPN Silicon Transistor , Planar Silicon Transistor Features • • • â , /KSC5402DT Rev. C0 www.fairchildsemi.com 1 KSC5402D/KSC5402DT — NPN Silicon Transistor , Planar , =125°C VCE=1V, IC=1A Max. 4 6 Base-Emitter Saturation Voltage IC =0.4A, IB=0.04A 0.6 V 0.4 1.0 V TA=25°C 0.3 0.75 V TA=125°C VBE(sat) 0.25 TA=125°C IC=1A , IB=0.2A TA=25°C 0.65 1.2 V 0.78 1.0 V TA=125°C IC=1A , IB=0.2A TA=25°C 0.65


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PDF KSC5402D/KSC5402DT O-220 1A 300V TRANSISTOR
2009 - NPN Transistor 1.5A 300V

Abstract: QS 100 NPN Transistor 200H NPN Transistor VCEO 1000V
Text: KSC5402D/KSC5402DT NPN Silicon Transistor , Planar Silicon Transistor Features · · · · · · , www.fairchildsemi.com 1 KSC5402D/KSC5402DT - NPN Silicon Transistor , Planar Silicon Transistor December 2009 , Voltage A A A A TA=125°C VCE(sat) 100 Units 0.01 TA=125°C VCE=1V, IC=1A Max , =25°C 0.3 0.75 V TA=125°C VBE(sat) 0.25 TA=125°C IC=1A , IB=0.2A TA=25°C 0.65 1.2 V 0.78 1.0 V TA=125°C IC=1A , IB=0.2A TA=25°C 0.65 0.9 V TA=25°C 0.85


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PDF KSC5402D/KSC5402DT O-220 NPN Transistor 1.5A 300V QS 100 NPN Transistor 200H NPN Transistor VCEO 1000V
2004 - FJP13007

Abstract: electronic ballast with npn transistor
Text: FJP13007 NPN Silicon Transistor FJP13007 NPN Silicon Transistor High Voltage Switch Mode , , IB = 1A IC = 8A, IB = 2A 1 2 3 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A 1.2 1.6 V V fT Current Gain Bandwidth Product VCE , tSTG Storge Time tF Fall Time VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50 8 5 60 , Rev. C www.fairchildsemi.com FJP13007 NPN Silicon Transistor Electrical Characteristics


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PDF FJP13007 FJP13007 O-220 electronic ballast with npn transistor
2005 - FJP13007

Abstract: electronic ballast with npn transistor
Text: High Voltage Fast-Switching NPN Power Transistor · High Voltage Capability · High Switching Speed , High Voltage Fast-Switching NPN Power Transistor FJP13007 Symbol TC = 25°C unless otherwise , ) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A 1.0 2.0 3.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A 1.2 , 125V, IC = 5A IB1 = -IB2 = 1A RL = 25 8 5 60 30 4 MHz 110 pF 1.6 µs 3.0


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PDF O-220 FJP13007 electronic ballast with npn transistor
2005 - FJPF13007

Abstract: electronic ballast with npn transistor
Text: High Voltage Fast-Switching NPN Power Transistor · High Voltage Capability · High Switching Speed , High Voltage Fast-Switching NPN Power Transistor FJPF13007 Symbol TC = 25°C unless otherwise , ) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A 1.0 2.0 3.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A 1.2 , 125V, IC = 5A IB1 = -IB2 = 1A RL = 25 8 5 60 30 4 MHz 110 pF 1.6 µs 3.0


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PDF O-220F FJPF13007 electronic ballast with npn transistor
2007 - Not Available

Abstract: No abstract text available
Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor · · · · · · High Voltage , =2.5V, IC=1A VCE(sat) Collector-Emitter Saturation Voltage IC =0.8A, IB=0.08A TC=25°C 18 25 , 0.5 V TC=125°C IC=1A , IB=0.2A TC=25°C TC=125°C 0.3 0.6 V IC =2A, IB=0.4A TC , =10V 11 VF Diode Forward Voltage IF = 1A , IC =1mA, IE=0 pF MHz 0.86 0.79 TC , (DSAT) Dynamic Saturation Voltage IC=1A , IB1=100mA VCC=300V at 1 ms TC=25°C 8 V TC


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PDF KSC5338D/KSC5338DW O-220 KSC5338D/KSC5338DW
2005 - Not Available

Abstract: No abstract text available
Text: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching , www.fairchildsemi.com FJPF13007 High Voltage Fast-Switching NPN Power Transistor FJPF13007 Symbol TC = 25 , Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A 1.0 2.0 3.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A 1.2 1.6 V , 8 5 60 30 4 MHz VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 25Ω 110 pF 1.6


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PDF O-220F FJPF13007
2007 - TIP50

Abstract: TIP48 TIP47 TIP49 300V transistor npn 2a vbe 10v, vce 500v NPN Transistor OF TRANSISTOR tip47 tip50 fairchild
Text: TIP47/TIP48/TIP49/TIP50 NPN Silicon Transistor · High Voltage and Switching Applications · High , /TIP50 - NPN Silicon Transistor November 2008 Symbol VCEX(sus) Parameter Collector-Emitter , = 1A VCE(sat) * Collector-Emitter Saturation Voltage IC = 1A , IB = 0.2A VBE(sat) * Base-Emitter Saturation Voltage VCE = 10V, IC = 1A fT Current Gain Bandwidth Product V CE =10V, IC , . 1.0.0 40 www.fairchildsemi.com 3 TIP47/TIP48/TIP49/TIP50 - NPN Silicon Transistor Typical


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PDF TIP47/TIP48/TIP49/TIP50 O-220 TIP47 TIP48 TIP49 TIP50 TIP50 TIP48 TIP47 TIP49 300V transistor npn 2a vbe 10v, vce 500v NPN Transistor OF TRANSISTOR tip47 tip50 fairchild
2005 - J13007-2

Abstract: J13007 J13007-1 transistor J13007-1 j13007-1 fairchild J-13007-2 transistor j13007 fjp13007tu F J13007-2 FJP13007H1TU
Text: FJP13007 High Voltage Fast-Switching NPN Power Transistor FJP13007 High Voltage Fast-Switching NPN Power Transistor · High Voltage Capability · High Switching Speed · Suitable for Electronic , = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCE = 10V, IC = 0.5A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL , FJP13007 Rev. D www.fairchildsemi.com FJP13007 High Voltage Fast-Switching NPN Power Transistor


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PDF FJP13007 FJP13007 O-220 FJP13007H1TU FJP13007H2TU FJP13007TU J13007-2 J13007 J13007-1 transistor J13007-1 j13007-1 fairchild J-13007-2 transistor j13007 F J13007-2
2005 - transistor 12v 1A NPN

Abstract: fje5
Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar , Parameter IC = 0.5A, IB = 0.1A IC = 1A , IB = 0.2A IC = 2.5A, IB = 0.5A Test Condition Min. Typ. 0.7 1.0 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A , IB , www.fairchildsemi.com FJE5304D NPN Triple Diffused Planar Silicon Transistor Electrical Characteristics (Continued , Silicon Transistor Typical Performance Characteristics FJE5304D NPN Triple Diffused Planar Silicon


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PDF FJE5304D FJE5304D O-126 transistor 12v 1A NPN fje5
2005 - FJE5304D

Abstract: No abstract text available
Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar , 0.5A, IB = 0.1A IC = 1A , IB = 0.2A IC = 2.5A, IB = 0.5A Test Condition Min. Typ. 0.7 1.0 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A , IB = 0.2A , 100 1 10 IC [A], COLLECTOR CURRENT 3 www.fairchildsemi.com FJE5304D NPN Triple , FJE5304D NPN Triple Diffused Planar Silicon Transistor Typical Performance Characteristics FJE5304D


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PDF FJE5304D FJE5304D O-126
2005 - FJP3305

Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Text: High Voltage Fast-Switching NPN Power Transistor · High Voltage Capability · High Switching Speed , High Voltage Fast-Switching NPN Power Transistor FJP3305 Symbol TC = 25°C unless otherwise , Current VEB = 9V, IC = 0 hFE1 hFE2 DC Current Gain * VCE = 5V, IC = 1A VCE = 5V, IC = 2A VCE(sat) Collector-Emitter Saturation Voltage IC = 1A , IB = 0.2A IC = 2A, IB = 0.5A IC = 4A, IB = 1A 0.5 0.6 1.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 1A , IB =


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PDF O-220 FJP3305 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
2004 - trace code TO-220

Abstract: J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D
Text: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features · Built-in Diode between Collector and Emitter · Suitable for , , IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A , (sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A ©2004 Fairchild , Switching NPN Power Transistor Electrical Characteristics Symbol VF Cob tSTG tF tSTG tF Diode Forward


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PDF FJP3307D FJP3307D O-220 FJP3307DH1 FJP3307DH1TU FJP3307DH2 FJP3307DH2TU FJP3307DTU trace code TO-220 J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D
2010 - Not Available

Abstract: No abstract text available
Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • â , =2.5V, IC=1A Ta=25°C 18 25 Ta=125°C Collector-Emitter Saturation Voltage 15 Ta , V Ta=25°C 0.22 0.5 V Ta=125°C IC=1A , IB=0.2A 0.3 0.6 V IC =0.8A, IB , Gain Bandwidth Product IC =0.5A,VCE=10V VF Diode Forward Voltage IF= 1A , IC =1mA, IE=0 Ta , Voltage IC=1A , IB1=100mA VCC=300V at 1 µs Ta=25°C 8 V Ta=125°C 15 V IC=1A , IB1


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PDF KSC5338D/KSC5338DW O-220 O-220
2005 - j3305

Abstract: j3305-1 TRANSISTOR J3305-1 j3305-2 J3305-2 y transistor transistor j3305-2 J3305-2 transistor transistor j3305 TO220 Semiconductor Packaging FJP3305H2TU
Text: reliability e-mail this datasheet Design center NPN Silicon Transistor Contents ·Features ·Product status , FJP3305 High Voltage Fast-Switching NPN Power Transistor FJP3305 High Voltage Fast-Switching NPN Power Transistor · High Voltage Capability · High Switching Speed · Suitable for Electronic , www.fairchildsemi.com FJP3305 Rev. B FJP3305 High Voltage Fast-Switching NPN Power Transistor Electrical , , IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 1A , IB = 0.2A IC = 2A, IB = 0.5A IC = 4A, IB = 1A IC


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PDF FJP3305 FJP3305 O-220 O-220-3 FJP3305H1TU FJP3305H2TU FJP3305TU j3305 j3305-1 TRANSISTOR J3305-1 j3305-2 J3305-2 y transistor transistor j3305-2 J3305-2 transistor transistor j3305 TO220 Semiconductor Packaging
2004 - FJP3307D

Abstract: electronic ballast with npn transistor
Text: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features · Built-in Diode between Collector and Emitter · Suitable for , = 5A, IB = 1A 2 V IC = 8A, IB = 2A 3 V VBE(sat) Base-Emitter Saturation Voltage 1 8 5 mA 40 30 FJP3307D Rev. 1.0.0 1.2 V IC = 5A, IB = 1A ©2004 Fairchild , Fall Time Max VCC = 125V, IC = 5A IB1 = -IB2 = 1A , RL = 50 tSTG Typ. IC = 3A Cob


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PDF FJP3307D FJP3307D O-220 electronic ballast with npn transistor
2001 - TIP110 equivalent

Abstract: No abstract text available
Text: · · · · Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A (Min.) Low , , IE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 4V, IC = 2A VCB = , Rev. H3 Product Folder - Fairchild P/N TIP111 - NPN Epitaxial Silicon Darlington Transistor , Cross-reference VCE=4V, IC=1A (Min.) search q Low Collector-Emitter Saturation Voltage technical information q , P/N TIP111 - NPN Epitaxial Silicon Darlington Transistor space space Home | Find products


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PDF TIP110/111/112 TIP115/116/117 O-220 TIP110 TIP111 TIP112 TIP110 equivalent
2005 - marking code transistor list

Abstract: FJC690 FJC790
Text: FJC690 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application · Complement to FJC790 , 100mA VCE = 2V, IC = 1A VCE = 2V, IC = 2A VCE(sat) Collector-Emitter Saturation Voltage IC = 0.1A, IB = 0.5mA IC = 1A , IB = 5mA 80 300 mV mV VBE(sat) Base-Emitter Saturation Voltage IC = 1A , IB = 10mA 0.9 V VBE(on) Base-Emitter On Voltage VCE = 2V, IC = 1A COB , FJC690 NPN Epitaxial Silicon Transistor Package Marking and Ordering Information FJC690 NPN


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PDF FJC690 FJC790 OT-89 FJC690 marking code transistor list FJC790
2005 - j5304d

Abstract: j5304 transistor j5304d FJE5304DTU NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o
Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar , Condition IC = 0.5A, IB = 0.1A IC = 1A , IB = 0.2A IC = 2.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1A , IB = , NPN Triple Diffused Planar Silicon Transistor Typical Performance Characteristics Figure 1. Static , NPN Triple Diffused Planar Silicon Transistor Typical Performance Characteristics Figure 7 , IC [A], COLLECTOR CURRENT 10 IC [A], COLLECTOR CURRENT Vcc=50V, IB1= 1A , IB2 = - 1A L = 1mH 10


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PDF FJE5304D FJE5304D O-126 FJE5304DTU j5304d j5304 transistor j5304d NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o
2007 - j13009 2

Abstract: j13009 j13009-2 j13009 TRANSISTOR
Text: FJPF13009 NPN Silicon Transistor High Voltage Switch Mode Application • High Voltage , Corporation FJPF13009 Rev. B www.fairchildsemi.com 1 FJPF13009 — NPN Silicon Transistor December , 5V, IC = 8A 1 mA VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 1A IC , Voltage IC = 5A, IB = 1A IC = 8A, IB = 1.6A 1.2 1.6 V V Cob Output Capacitance VCB = , FJPF13009 Rev. B www.fairchildsemi.com 2 FJPF13009 — NPN Silicon Transistor Electrical


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PDF FJPF13009 O-220F FJPF13009 j13009 2 j13009 j13009-2 j13009 TRANSISTOR
2010 - Not Available

Abstract: No abstract text available
Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features · · · · · · , /KSC5338DW - NPN Triple Diffused Planar Silicon Transistor May 2010 Symbol Ta=25°C unless , Ta=125°C 4 6 VCE=2.5V, IC=1A Ta=25°C 18 25 Ta=125°C Collector-Emitter , Saturation Voltage 1.8 2.5 V Ta=25°C 0.22 0.5 V Ta=125°C IC=1A , IB=0.2A 0.3 , IF= 1A , IC =1mA, IE=0 Ta=25°C 0.86 Ta=125°C 0.79 IF=2A Ta=25°C 0.95 Ta


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PDF KSC5338D/KSC5338DW O-220 O-220
2007 - J13009

Abstract: J130092 j13009-2 j13009 TRANSISTOR F J13009 FJPF13009TU FJPF13009TTU FJPF13009H2TU FJPF13009 US Global Sat
Text: FJPF13009 NPN Silicon Transistor High Voltage Switch Mode Application · High Voltage Capability , Rev. B www.fairchildsemi.com 1 FJPF13009 - NPN Silicon Transistor December 2007 Symbol , VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 12A, IB = 3A 1 1.5 3 V V V VBE (sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 1A , www.fairchildsemi.com 2 FJPF13009 - NPN Silicon Transistor Electrical Characteristics VBE(sat), VCE(sat)[V


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PDF FJPF13009 O-220F FJPF13009 J13009 J130092 j13009-2 j13009 TRANSISTOR F J13009 FJPF13009TU FJPF13009TTU FJPF13009H2TU US Global Sat
2007 - marking E3 sot89

Abstract: my marking code sot 89 sot89 E3
Text: reliability e-mail this datasheet Design center NPN Epitaxial Silicon Transistor Contents ·Features , FJC690 NPN Epitaxial Silicon Transistor July 2007 FJC690 NPN Epitaxial Silicon Transistor , 0.5mA IC = 1A , IB = 5mA IC = 1A , IB = 10mA VCE = 2V, IC = 1A VCB = 10V, IE = 0, f = 1MHz Min. 45 45 , www.fairchildsemi.com FJC690 Rev. D FJC690 NPN Epitaxial Silicon Transistor Package Marking and Ordering , Quantity 4,000 2 FJC690 Rev. D www.fairchildsemi.com FJC690 NPN Epitaxial Silicon Transistor


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PDF FJC690 FJC690 FJC790 OT-89 FJC690TF marking E3 sot89 my marking code sot 89 sot89 E3
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