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Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
HV110-SM02-Q HV110-SM02-Q ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for HVAC ±125 to ±2.5K Pa (±0.5 to ±10 inH2O) - Quarter Tape & Reel, SON-11, SM02 Datasheet
SP160-SM02-Q SP160-SM02-Q ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for Medical ±5K Pa to ±40K Pa - Quarter Tape & Reel, SON-11, SM02 Datasheet
ND015D-SM02-M ND015D-SM02-M ECAD Model Superior Sensor Technology Multi-Range Differential Pressure Sensor ±1 to ±15 psi (±0.1 to ±1 Bar) - Multi Tray, SON-11 Datasheet
ND060D-SM02-M ND060D-SM02-M ECAD Model Superior Sensor Technology Multi-Range Differential Pressure Sensor ±10 to ±60 psi (±0.7 to ±4.1 Bar) - Multi Tray, SON-11 Datasheet
ND150D-SM02-M ND150D-SM02-M ECAD Model Superior Sensor Technology Multi-Range Differential Pressure Sensor ±50 to ±150 psi (±3.4 to ±10.3 Bar) - Multi Tray, SON-11 Datasheet
ND030A-SM02-M ND030A-SM02-M ECAD Model Superior Sensor Technology Absolute Pressure Sensor 30 psia (2.1 Bar) - Multi Tray, SON-11 Datasheet

transistor IC 1557 b Datasheets Context Search

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transistor d 1557

Abstract: transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S
Text: transistor with passivated surface in low-capacitance 50 B 3 DIN 41867 plastic package similar to T0119. This transistor is particularly intended for use in mixer and oscillator circuits up to 900 MHz in diode tuned , 25C D ■fl235bQS 0DQ4Q81 5 ■SIEG PNP Germanium UHF Transistor AF 280 S - SIEMENS , = 25 °C) - Ic "'a IRE -VBE V mA HA Id h mV 10 2 80 25 (>8) 370 Collector cutoff current {-Vces , current ("Vebo = 0.3 V) <100 HA ^ 1557 F-12 2SC D ■fl23SbQS Q0D40fl£_7 mZlEG ^T-S/'Of SIEMENS


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PDF fl235bQS 0DQ4Q81 T0119. Q62701-F88 transistor d 1557 transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S
transistor D 1557

Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power
Text: Transistor -SIEMENS - fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is , iiA iiA 1557 F-12 127 2SC D fl23SbQS 0 0 MO W 7 « S I E f i AKTIENGESELLSCHAF -0 7 SIEMENS AF280S D yn a m ic c h a ra c te ris tic s (Tamb = 25 °C) Transition


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PDF fi235bOS GG04Q 2701-F88 transistor D 1557 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power
Not Available

Abstract: No abstract text available
Text: I Ordering number : ENN6578 NPN Epitaxial Planar Silicon Transistor EC3H07B UHF to S Band , Conditions Symbol Ratings min typ Unit max Collector Cutoff Current ICBO V c b =5V, I , Gain Noise Figure V C E -1 V , IC =5mA, f=2G H z 1S 2 1 e 122 8 V c e =3V, lc=15m A , f , Electric Co.,Ltd. Semiconductor Company T O K Y O O FF IC E Tokyo Bldg., 1-10. 1 C hôm e. U eno. Taito-ku , Collector-to-Emitter Voltage, V ( ^ e - V Collector Current, lç - mA Collector Current, Iç - mA Cre - V c b


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PDF ENN6578 EC3H07B E-CSP1006-3
1996 - 305 Power Mosfet MOTOROLA

Abstract: Transistor motorola 418 MGW30N60
Text: Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N­Channel Enhancement­Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme , Motorola, Inc. 1995 Power MOSFET Transistor Device Data 1 MGW30N60 ELECTRICAL CHARACTERISTICS , (VGE = 0 Vdc, IC = 250 µAdc) Temperature Coefficient (Positive) BVCES Emitter­to­Collector , ) Collector­to­Emitter On­State Voltage (VGE = 15 Vdc, IC = 15 Adc) (VGE = 15 Vdc, IC = 15 Adc, TJ = 125°C) (VGE = 15


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PDF MGW30N60/D MGW30N60 MGW30N60/D* 305 Power Mosfet MOTOROLA Transistor motorola 418 MGW30N60
Transistor motorola 418

Abstract: 305 Power Mosfet MOTOROLA MGW30N60
Text: Transistor Device Data MGW30N60 PACKAGE DIMENSIONS 0.25 (0.010) M ­T­ ­Q­ T B M NOTES , Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N­Channel Enhancement­Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme , Motorola, Inc. 1995 Power MOSFET Transistor Device Data 1 MGW30N60 ELECTRICAL CHARACTERISTICS , (VGE = 0 Vdc, IC = 250 µAdc) Temperature Coefficient (Positive) BVCES Emitter­to­Collector


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PDF MGW30N60/D MGW30N60 MGW30N60/D* Transistor motorola 418 305 Power Mosfet MOTOROLA MGW30N60
1995 - TO247AE

Abstract: to-247AE MOTOROLA TRANSISTOR 726 MGW40N60U ADC 0803
Text: Data Sheet MGW40N60U Insulated Gate Bipolar Transistor N­Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an , , IC = 250 µAdc) Temperature Coefficient (Positive) BVCES Emitter­to­Collector Breakdown Voltage , Voltage (VGE = 15 Vdc, IC = 20 Adc) (VGE = 15 Vdc, IC = 20 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 40 Adc) VCE(on) Gate Threshold Voltage (VCE = VGE, IC = 1 mAdc) Threshold Temperature Coefficient


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PDF MGW40N60U/D MGW40N60U MGW40N60U/D* TO247AE to-247AE MOTOROLA TRANSISTOR 726 MGW40N60U ADC 0803
1995 - telefunken IC 121

Abstract: No abstract text available
Text: S 822 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low , Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 12 6 2 8 30 150 ­65 to +150 Unit V V V , VCB = 8 V, IE = 0 Emitter-base cut-off current VEB = 1 V, IC = 0 Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter saturation voltage IC = 5 mA, IB = 0.5 mA DC forward


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PDF D-74025 telefunken IC 121
2000 - EC3H07B

Abstract: TA-2555
Text: -71.4 VCE=3V, IC =5mA, ZO=50 Freq(MHz) S11 S21 11.400 73.0 S22 0.919 S22 155.7 , Ordering number : ENN6578 EC3H07B NPN Epitaxial Planar Silicon Transistor EC3H07B UHF to S , 9 V 4 V VEBO IC 2 V 30 mA PC Tj 100 mW Junction Temperature , µA Emitter Cutoff Current VEB=1V, IC =0 10 µA DC Current Gain hFE VCE=1V, IC =5mA VCE=1V, IC =5mA VCE=3V, I C=15mA Output Capacitance fT1 fT2 Cob VCB=1V, f=1MHz 0.55


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PDF ENN6578 EC3H07B EC3H07B] 10GHz S21e2 EC3H07B TA-2555
2008 - EC3H07B

Abstract: No abstract text available
Text: 0.200 35.3 0.635 -71.4 S11 VCE=3V, IC =5mA, ZO=50 Freq(MHz) S11 -27.6 S21 155.7 , Ordering number : ENN6578 EC3H07B NPN Epitaxial Planar Silicon Transistor EC3H07B UHF to S , V 30 mA Collector Dissipation IC PC 100 mW Junction Temperature Tj 150 , Cutoff Current ICBO VCB=5V, IE=0 1.0 A Emitter Cutoff Current IEBO hFE VEB=1V, IC , Transfer Capacitance Forward Transfer Gain Noise Figure VCE=1V, IC =5mA VCE=1V, IC =5mA 100 160


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PDF ENN6578 EC3H07B EC3H07B] 10GHz S21e2 E-CSP1006-3 EC3H07B
2003 - EC4H07C

Abstract: IC 2272 IC 0116
Text: Ordering number : ENN7282 EC4H07C NPN Epitaxial Planar Silicon Transistor EC4H07C UHF to S , V Collector Current V 30 mA 100 mW Junction Temperature IC PC Tj 150 , Transfer Capacitance Cre VCB=5V, IE=0 VEB=1V, IC =0 VCE=1V, IC =5mA VCE=1V, IC =5mA VCE=3V, IC =15mA Ratings min typ S21e21 S21e22 VCE=1V, IC =5mA, f=2GHz VCE=3V, IC =15mA, f=2GHz max Unit , Forward Transfer Gain Noise Figure Conditions 0.55 GHz 0.7 pF 0.4 VCE=1V, IC =3mA, f


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PDF ENN7282 EC4H07C EC4H07C] 10GHz S21e2 E-CSP1008-4 EC4H07C IC 2272 IC 0116
2006 - EC4H07C

Abstract: ZO 607 MA
Text: Silicon Transistor EC4H07C UHF to S Band Low-Noise Amplifier and OSC Applications Features · · , 30 mA 100 mW Junction Temperature IC PC Tj 150 °C Storage Temperature , =0 VEB=1V, IC =0 VCE=1V, IC =5mA VCE=1V, IC =5mA VCE=3V, IC =15mA Ratings min typ S21e21 S21e22 VCE=1V, IC =5mA, f=2GHz VCE=3V, IC =15mA, f=2GHz VCE=1V, IC =3mA, f=2GHz max Unit 1.0 100 8 , susceptible to static electricity. IC - VCE 10 IC - VBE 30 6 0.03mA 4 0.02mA


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PDF ENN7282 EC4H07C 10GHz S21e2 EC4H07C ZO 607 MA
1998 - IC 7443

Abstract: 2SC5432 2SC5006
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR , V Collector Current IC 100 mA Total Power Dissipation PT 125 mW Junction , Current ICBO VCB = 10 V, IE = 0 1000 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = , Power Gain Noise Figure hFE VCE = 3 V, IC = 7 fT VCE = 3 V, IC = 7 mA, f = 1 GHz Cre |S21e| NF mANote 1 VCB = 3 V, IE = 0, f = 1 2 80 3.0 MHzNote 2 VCE = 3 V, IC = 7 mA, f


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PDF 2SC5432 IC 7443 2SC5432 2SC5006
2003 - IC 30427

Abstract: IC 30427 M RD06HHF1 transistor d 1557 1518 B FET TRANSISTOR 30427 25.ID5 mosfet HF amplifier Pch MOS FET mosfet vgs 5v
Text: PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING 3.2+/-0.4 12.3MIN , +/-0.7 12.3+/-0.6 RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power , OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W TYPICAL CHARACTERISTICS , ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor , Silicon MOSFET Power Transistor 30MHz,6W EQUIVALENT CIRCUIT(f=30MHz) V gg V dd C1 330uF,50V


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PDF RD06HHF1 30MHz 30MHz RD06HHF1 IC 30427 IC 30427 M transistor d 1557 1518 B FET TRANSISTOR 30427 25.ID5 mosfet HF amplifier Pch MOS FET mosfet vgs 5v
2001 - 2SC5600

Abstract: marking 603 npn transistor NEC 1093
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA891TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES · Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz · Built-in 2 , 1.5 V IC 100 mA 190 in 1 element 210 in 2 elements mW Collector Current Total , IEBO VBE = 1 V, IC = 0 mA - - 600 nA VCE = 1 V, IC = 5 mA 100 - 160 -


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PDF PA891TD S21e2 2SC5600) 2SC5600 PA891TD-T3 2SC5600 marking 603 npn transistor NEC 1093
2001 - 2SC5600

Abstract: No abstract text available
Text: distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA , DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA871TD NPN SILICON RF TRANSISTOR (WITH 2 , Base Voltage VEBO 1.5 V IC 100 mA 190 in 1 element 210 in 2 elements mW , Cut-off Current IEBO VBE = 1 V, IC = 0 mA - - 600 nA VCE = 1 V, IC = 5 mA 100 - 160 - VCE = 1 V, IC = 5 mA, f = 2 GHz 3.5 5.0 - GHz VCE = 1 V, IC = 15 mA, f = 2


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PDF PA871TD S21e2 2SC5600) 2SC5600 PA871TD-T3 2SC5600
transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Text: e re lia b ility of its s e m ic o n d u c to rd e v ic e s , th e p o ssib ility of d e fe c ts , DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in , current capability achieve a very w ide dynam ic range and excellent linearity. This is achieved by direct , dB TYP. : PACKAGE DIMENSIONS = 3V , Ic = 10 mA, f = 2 GHz) in m ilimeters -4 - (@ V c


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PDF 2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568
2003 - transistor D 1557

Abstract: RD15HVF1 RD15HV D 1413 transistor MOSFET RF POWER TRANSISTOR VHF 703 MOSFET TRANSISTOR Semiconductor 1346 transistor transistor 45 f 123 UHF POWER mosfet 3w transistor d1 391
Text: Note: B oard m aterial-Teflon s ubs trate M ic ro s trip line width= 4.2m m /50OHM ,er:2.7,t= 1.6m m Dim , Note: B oard m aterial-Teflon s ubs trate M ic ro s trip line width= 4.2m m /50OHM ,er:2.7,t= 1.6m m Dim , RD15HVF1 9.1+/-0.7 1.3+/-0.4 3.6+/-0.2 Silicon MOSFET Power Transistor , 175MHz15W 520MHz,15W DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers , RD15HVF1 Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0 Ta=+25°C Vds=10V Silicon MOSFET Power Transistor


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PDF RD15HVF1 175MHz15W 520MHz RD15HVF1 175MHz 520MHz transistor D 1557 RD15HV D 1413 transistor MOSFET RF POWER TRANSISTOR VHF 703 MOSFET TRANSISTOR Semiconductor 1346 transistor transistor 45 f 123 UHF POWER mosfet 3w transistor d1 391
transistor IC 1557 b

Abstract: MGW20N60D 1557 b transistor 305 Power Mosfet MOTOROLA
Text: Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW20N60D Motorola Preferred , °C 600 VOLTS SHORT CIRCUIT RATED This Insulated Gate Bipolar Transistor (IGBT) is co­packaged with a , Transistor Device Data 1 MGW20N60D ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted , Collector­to­Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 µAdc) Temperature Coefficient (Positive) BVCES , ) Vdc nAdc ON CHARACTERISTICS (1) Collector­to­Emitter On­State Voltage (VGE = 15 Vdc, IC = 10


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PDF MGW20N60D/D MGW20N60D MGW20N60D/D* transistor IC 1557 b MGW20N60D 1557 b transistor 305 Power Mosfet MOTOROLA
1996 - transistor IC 1557 b

Abstract: MGW20N60D motorola 803 transistor
Text: Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW20N60D Motorola Preferred , °C 600 VOLTS SHORT CIRCUIT RATED This Insulated Gate Bipolar Transistor (IGBT) is co­packaged with a , Transistor Device Data 1 MGW20N60D ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted , Collector­to­Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 µAdc) Temperature Coefficient (Positive) BVCES , ) Vdc nAdc ON CHARACTERISTICS (1) Collector­to­Emitter On­State Voltage (VGE = 15 Vdc, IC = 10


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PDF MGW20N60D/D MGW20N60D MGW20N60D/D* transistor IC 1557 b MGW20N60D motorola 803 transistor
1996 - Transistor motorola 418

Abstract: mosfet amp ic MGW12N120D 305 Power Mosfet MOTOROLA 305 Mosfet MOTOROLA Motorola 720 transistor
Text: Motorola TMOS Power MOSFET Transistor Device Data 25 IC , COLLECTOR­TO­EMITTER CURRENT (A) I , Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred , °C 1200 VOLTS SHORT CIRCUIT RATED This Insulated Gate Bipolar Transistor (IGBT) is co­packaged with a , MOSFET Transistor Device Data 1 MGW12N120D ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise , Collector­to­Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 µAdc) Temperature Coefficient (Positive) BVCES


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PDF MGW12N120D/D MGW12N120D MGW12N120D/D* Transistor motorola 418 mosfet amp ic MGW12N120D 305 Power Mosfet MOTOROLA 305 Mosfet MOTOROLA Motorola 720 transistor
1997 - "marking E1"

Abstract: BFS17 BFS17R sot 23 transistor 70.2
Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz , 60°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg , Emitter-base cut-off current VEB = 2.5 V, IC = 0 Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector saturation voltage VCE = 1 V, IC = 20 mA DC forward current transfer ratio VCE = 1 V, IC = 2 mA VCE = 1 V, IC = 25 mA Symbol Max. Unit ICES 100 mA ICBO 100 nA IEBO


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PDF BFS17/BFS17R BFS17 BFS17R D-74025 17-Apr-96 "marking E1" sot 23 transistor 70.2
1997 - ic 3845

Abstract: transistor IC 1557 b S822T 601 644 k 547 c 945 3268
Text: S822T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for , VEBO IC Ptot Tj Tstg Value 12 6 2 8 30 150 ­65 to +150 Unit V V V mA mW °C °C , VCB = 8 V, IE = 0 Emitter-base cut-off current VEB = 1 V, IC = 0 Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter saturation voltage IC = 5 mA, IB = 0.5 mA DC forward current transfer ratio VCE = 3 V, IC = 1 mA Symbol Max. Unit ICES 100 mA ICBO 100


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PDF S822T 12the D-74025 18-Apr-96 ic 3845 transistor IC 1557 b S822T 601 644 k 547 c 945 3268
1996 - transistor d 1557

Abstract: MGW12N120
Text: MOSFET Transistor Device Data MGW12N120 TYPICAL ELECTRICAL CHARACTERISTICS 40 TJ = 125°C IC , Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N­Channel Enhancement­Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme , overall value. REV 1 © Motorola TMOS Motorola, Inc. 1996 Power MOSFET Transistor Device Data , Collector­to­Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 µAdc) Temperature Coefficient (Positive) BVCES


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PDF MGW12N120/D MGW12N120 MGW12N120/D* TransistorMGW12N120/D transistor d 1557 MGW12N120
1996 - MGW20N120

Abstract: transistor d 1557 305 Power Mosfet MOTOROLA
Text: Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N­Channel Enhancement­Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme , Transistor Device Data 1 MGW20N120 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted , CHARACTERISTICS Collector­to­Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 µAdc) Temperature Coefficient , CHARACTERISTICS (1) Collector­to­Emitter On­State Voltage (VGE = 15 Vdc, IC = 10 Adc) (VGE = 15 Vdc, IC = 10


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PDF MGW20N120/D MGW20N120 MGW20N120/D* TransistorMGW20N120/D MGW20N120 transistor d 1557 305 Power Mosfet MOTOROLA
BF775

Abstract: No abstract text available
Text: BF775 Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide , 60°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg , V, IE = 0 Emitter-base cut-off current VEB = 2 V, IC = 0 Collector-emitter breakdown voltage IC = 1 mA, IB = 0 DC forward current transfer ratio VCE = 6 V, IC = 5 mA VCE = 6 V, IC = 20 mA , . Electrical AC Characteristics Tamb = 25°C Parameters / Test Conditions Transition frequency VCE = 6 V, IC


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PDF BF775 BF775 D-74025 15-Apr-96
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