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Part Manufacturer Description Datasheet Download Buy Part
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16

transistor HEMT GaS Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - FHR02FH

Abstract: fujitsu hemt
Text: HEMT NF & Gas vs. IDS 4 20 Gas 2 10 1 5 Noise Figure (dB) 15 3 3 , ) NF & Gas vs. FREQUENCY FHR02FH Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 , FHR02FH Super Low Noise HEMT FEATURES · · · · · Low Noise Figure: 1.2B (Typ.)@f=18GHz , Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 4-22GHz frequency


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PDF FHR02FH 18GHz FHR02FH 4-22GHz FCSI0598M200 fujitsu hemt
2004 - FHX13LG

Abstract: FHX13 FHX14LG
Text: (V) 2 4 FHX13LG, FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 , Gain (dB) NF & Gas vs. FREQUENCY FHX13LG FHX13LG, FHX14LG Super Low Noise HEMT TYPICAL NOISE , FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , Available DESCRIPTION The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor (SuperHEMT , =1mA Min. 10 35 -0.1 IGS = -10µA -3.0 Gas Rth Channel to Case AVAILABLE CASE


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz FHX13LG FHX13
2004 - FHX35LP

Abstract: FHX35LG WG 924 FHX35
Text: DESCRIPTION The FHX35LG is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, low noise , FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , Voltage Noise Figure Associated Gain IDSS gm Vp VGSO NF Gas Rth Thermal Resistance VDS = , Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200 LG 150 , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT


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PDF FHX35LG 12GHz FHX35LG 2-18GHz reliabili4888 FHX35LP WG 924 FHX35
1998 - low noise hemt

Abstract: lg s12 WG 924 FHX35LG PT 4304 a transistor fujitsu hemt
Text: DESCRIPTION The FHX35LG is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, low noise , FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , Voltage Noise Figure Associated Gain IDSS gm Vp VGSO NF Gas Rth Thermal Resistance VDS = , Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200 LG 150 , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT


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PDF FHX35LG 12GHz FHX35LG 2-18GHz FCSI0598M200 low noise hemt lg s12 WG 924 PT 4304 a transistor fujitsu hemt
2004 - FHX04

Abstract: FHX04LG FHX05LG FHX06LG Eudyna Packaging
Text: Available DESCRIPTION The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor ( HEMT , FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ.)@f=12GHz , VGSO NF Gas NF Gas NF Gas Rth Condition VDS = 2V, VGS = 0V VDS = 2V, IDS =10mA VDS = 2V , dB dB dB dB dB °C/W FHX04LG, 05LG, 06LG Super Low Noise HEMT POWER DERATING CURVE DRAIN , Drain-Source Voltage (V) NF & Gas vs. IDS FHX04LG NF & Gas vs. FREQUENCY FHX04LG 20 4 3 12


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PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FHX04 FHX04LG FHX05LG Eudyna Packaging
2004 - FHX04LG

Abstract: FHX04 FHX05LG FHX06LG low noise hemt 2-18G 12GAS
Text: Available DESCRIPTION The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor ( HEMT , FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ.)@f=12GHz , VGSO NF Gas NF Gas NF Gas Rth Condition VDS = 2V, VGS = 0V VDS = 2V, IDS =10mA VDS = 2V , dB dB dB dB dB °C/W FHX04LG, 05LG, 06LG Super Low Noise HEMT POWER DERATING CURVE DRAIN , Drain-Source Voltage (V) NF & Gas vs. IDS FHX04LG NF & Gas vs. FREQUENCY FHX04LG 20 4 3 12


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PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FHX04LG FHX04 FHX05LG low noise hemt 2-18G 12GAS
1998 - GaAs FET HEMT Chips

Abstract: No abstract text available
Text: DESCRIPTION The FHX02X is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, ultra-low , FHR02X GaAs FET & HEMT Chips NF & Gas vs. IDS 3 Noise Figure (dB) f=18GHz VDS=2V 2 NF 1 Gas 11 10 9 8 7 , FHR02X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.0dB (Typ.)@f=18GHz High , 10mA f = 18GHz Limit Typ. Max. 30 45 -0.7 1.0 60 -1.5 1.2 Unit mA mS V V dB Associated Gain Gas , 4 NF & Gas vs. Frequency 4 VDS=2V IDS=10mA Noise Figure (dB) 3 Gas 15 20 Associated Gain (dB


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PDF FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 GaAs FET HEMT Chips
1998 - FHX04LG

Abstract: FHX04 FHX05LG FHX06LG TVRO 4232 gm fujitsu hemt FHX*LG
Text: Available DESCRIPTION The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor ( HEMT , FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ.)@f=12GHz , VGSO NF Gas NF Gas NF Gas Rth Condition VDS = 2V, VGS = 0V VDS = 2V, IDS =10mA VDS = 2V , dB dB dB dB °C/W FHX04LG, 05LG, 06LG Super Low Noise HEMT POWER DERATING CURVE DRAIN , Drain-Source Voltage (V) NF & Gas vs. IDS FHX04LG NF & Gas vs. FREQUENCY FHX04LG 20 4 3 12


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PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FCSI0598M200 FHX04LG FHX04 FHX05LG TVRO 4232 gm fujitsu hemt FHX*LG
1998 - FHR02FH

Abstract: transistor hemt Low Noise HEMT
Text: HEMT NF & Gas vs. IDS 4 20 Gas 2 10 1 5 Noise Figure (dB) 15 3 3 , ) NF & Gas vs. FREQUENCY FHR02FH Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 , FHR02FH Super Low Noise HEMT FEATURES · · · · · Low Noise Figure: 1.2B (Typ.)@f=18GHz , Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 4-22GHz frequency


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PDF FHR02FH 18GHz FHR02FH 4-22GHz FCSI0598M200 transistor hemt Low Noise HEMT
2000 - low noise hemt

Abstract: transistor hemt FHX35LG transistor HEMT GaS rf transistor 3742
Text: FHX35LG is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, low noise and high gain , FHX35LG Super Low Noise HEMT NF & Gas vs. FREQUENCY 20 VDS=3V IDS=10mA Noise Figure (dB) Noise Figure , FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , ) (0,1) (1,2) (1,2) Symbol IDSS gm Vp VGSO NF Gas Rth Test Conditions VDS = 2V, VGS = 0V VDS = 2V , Low Noise HEMT POWER DERATING CURVE 300 Total Power Dissipation (mW) 250 200 150 100 50 0 0 50 100


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PDF FHX35LG 12GHz FHX35LG 2-18GHz low noise hemt transistor hemt transistor HEMT GaS rf transistor 3742
2004 - Not Available

Abstract: No abstract text available
Text: DESCRIPTION The FHX35LG is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, low noise , FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B (Typ.)@f=12GHz • High , Source Breakdown Voltage Noise Figure Associated Gain IDSS gm Vp VGSO NF Gas Rth Thermal , FHX35LG Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200 LG , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT NF


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PDF FHX35LG 12GHz FHX35LG 2-18GHz the88
2004 - Not Available

Abstract: No abstract text available
Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB (Typ.)@f=12GHz , Packaging Available DESCRIPTION The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency , Symbol IDSS gm Vp VGSO NF Gas NF Gas NF Gas Rth Condition VDS = 2V, VGS = 0V VDS = 2V , Unit mA mS V V dB dB dB dB dB dB °C/W FHX04LG, 05LG, 06LG Super Low Noise HEMT POWER


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PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz
1998 - transistor 1345

Abstract: FHR02X FHX02X GaAs FET HEMT Chips
Text: DESCRIPTION The FHX02X is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, ultra-low , & HEMT Chips NF & Gas vs. IDS DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 9 2 8 NF 7 1 6 0 10 Vgs =0V Drain Current (mA) 10 Gas Associated Gain (dB) 30 -0.4V , FHR02X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.0dB (Typ.)@f=18GHz High , Gas VDS = 2V IDS = 10mA f = 18GHz 8 9 - dB Rth Channel to Case - 220


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PDF FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 transistor 1345 FHR02X GaAs FET HEMT Chips
1998 - high power FET transistor s-parameters

Abstract: FHR02X FHX02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip
Text: DESCRIPTION The FHX02X is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, ultra-low , & HEMT Chips NF & Gas vs. IDS DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 9 2 8 NF 7 1 6 0 10 Vgs =0V Drain Current (mA) 10 Gas Associated Gain (dB) 30 -0.4V , FHR02X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.0dB (Typ.)@f=18GHz High , Gas VDS = 2V IDS = 10mA f = 18GHz 8 9 - dB Rth Channel to Case - 220


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PDF FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 high power FET transistor s-parameters FHR02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip
2004 - FHR02X

Abstract: FHX02X GaAs FET HEMT Chips
Text: DESCRIPTION The FHX02X is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, ultra-low , FHR02X GaAs FET & HEMT Chips NF & Gas vs. IDS DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 9 2 8 NF 7 1 6 0 10 Vgs =0V Drain Current (mA) 10 Gas Associated Gain (dB) 30 , FHR02X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.0dB (Typ.)@f=18GHz High , 1.0 1.2 dB Gas VDS = 2V IDS = 10mA f = 18GHz 8 9 - dB Rth Channel to


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PDF FHR02X 18GHz FHX02X 4-22GHz FHR02X GaAs FET HEMT Chips
1998 - FHX13LG

Abstract: fujitsu hemt FHX13 FHX14LG
Text: (V) 2 4 FHX13LG, FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 , Gas vs. FREQUENCY FHX13LG FHX13LG, FHX14LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE , FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , Available DESCRIPTION TM The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor , =10mA VDS = 2V, IDS =1mA Min. 10 35 -0.1 IGS = -10µA -3.0 Gas Rth Channel to Case


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz FCSI0598M200 FHX13LG fujitsu hemt FHX13
15A03

Abstract: No abstract text available
Text: (V) 2 4 FHX13LG, FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 , Gas vs. FREQUENCY FHX13LG FHX13LG, FHX14LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE , FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB (Typ.)@f=12GHz , Transistor (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz , VDS = 2V, IDS =1mA IGS = -10µA NF Gas Rth Channel to Case Note: RF parameters for LG


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz 15A03
2004 - Eudyna Packaging

Abstract: No abstract text available
Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , DESCRIPTION The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor (SuperHEMT) intended for general , IDSS gm Vp VGSO NF Gas NF FHX14LG Gas Rth Condition VDS = 2V, VGS =0V VDS = 2V, IDS =10mA VDS = 2V , 1 FHX13LG, FHX14LG Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW , 0 1 2 4 Drain-Source Voltage (V) 2 FHX13LG, FHX14LG Super Low Noise HEMT NF &


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz Eudyna Packaging
2004 - FHX02X

Abstract: GaAs FET HEMT Chips FHR02X transistor hemt
Text: DESCRIPTION The FHX02X is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, ultra-low , FHR02X GaAs FET & HEMT Chips NF & Gas vs. IDS DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 9 2 8 NF 7 1 6 0 10 Vgs =0V Drain Current (mA) 10 Gas Associated Gain (dB) 30 , FHR02X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.0dB (Typ.)@f=18GHz High , 1.0 1.2 dB Gas VDS = 2V IDS = 10mA f = 18GHz 8 9 - dB Rth Channel to


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PDF FHR02X 18GHz FHX02X 4-22GHz GaAs FET HEMT Chips FHR02X transistor hemt
2000 - low noise hemt

Abstract: FHX13LG FHX*LG low noise hemt transistor FHX13 FHX14LG
Text: (V) 2 4 FHX13LG, FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 , Gas vs. FREQUENCY FHX13LG FHX13LG, FHX14LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE , FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , Available DESCRIPTION TM The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor , =10mA VDS = 2V, IDS =1mA Min. 10 35 -0.1 IGS = -10µA -3.0 Gas Rth Channel to Case


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz low noise hemt FHX13LG FHX*LG low noise hemt transistor FHX13
1998 - FHX35LP

Abstract: FHX35LG fujitsu hemt
Text: Mobility Transistor ( HEMT ) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz , Low Noise HEMT NF & Gas vs. IDS 20 Gas 2 10 NF 1 5 3 Noise Figure (dB) 15 , (dB) NF & Gas vs. FREQUENCY FHX35LG/LP Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 , FHX35LG/LP Super Low Noise HEMT FEATURES · · · · · Low Noise Figure: 1.2B (Typ.)@f=12GHz , Voltage Noise Figure Associated Gain IDSS gm Vp VGSO NF Gas Rth Thermal Resistance VDS =


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PDF FHX35LG/LP 12GHz FHX35LG/LP 2-18GHz FCSI0598M200 FHX35LP FHX35LG fujitsu hemt
fujitsu hemt

Abstract: FHX04 FHX04LG 4232 gm CQ 527
Text: Available DESCRIPTION The FHX04LG/LP, FHX05LG/LP, FHX06LG/LP is a High Electron Mobility Transistor ( HEMT , . Super Low Noise HEMT ABSOLUTE MAXIMUM RATING (Ambienl Temperature Ta=25°C) Item Symbol Rating , FHX04LG/LP NF - 0.75 0.85 dB Associated Gain Gas vds = 2V, Ids = 10mA, f = 12GHz 9.5 10.5 - dB Noise Figure FHX05LG/LP NF - 0.9 0.11 dB Associated Gain Gas 9.5 10.5 - dB Noise Figure FHX06LG/LP NF - 1.1 1.35 dB Associated Gain Gas 9.5 10.5 - dB Thermal Resistance Rth Channel to Case - 300 400


OCR Scan
PDF FHX04LG/LP, 05LG/LP, 06LG/LP 12GHz FHX04) FHX05LG/LP, FHX06LG/LP 2-18GHz fujitsu hemt FHX04 FHX04LG 4232 gm CQ 527
1998 - FHX13LP

Abstract: FHX14lp FHX13LG
Text: Noise HEMT NF & Gas vs. FREQUENCY FHX13LG 3.0 VDS=2V IDS=10mA Noise Figure (dB) Gas 2 10 Noise Figure , FHX13LG/LP, 14LG/LP Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz , Available DESCRIPTION The FHX13LG/LP, FHX14LG/LP is a Super High Electron Mobility TM Transistor , ) Symbol IDSS gm Vp VGSO NF Gas NF FHX14LG/LP Gas Rth Condition VDS = 2V, VGS =0V VDS = 2V, IDS =10mA , 1999 1 FHX13LG/LP, 14LG/LP Super Low Noise HEMT POWER DERATING CURVE 200 Total Power


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PDF FHX13LG/LP, 14LG/LP 12GHz FHX13) FHX14LG/LP 2-18GHz FCSI0598M200 FHX13LP FHX14lp FHX13LG
1998 - fujitsu hemt

Abstract: No abstract text available
Text: Available DESCRIPTION The FHX04LG/LP, FHX05LG/LP, FHX06LG/LP is a High Electron Mobility Transistor ( HEMT , FHX04LG/LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ , : LG/LP Symbol IDSS gm Vp VGSO NF Gas NF Gas NF Gas Rth Condition VDS = 2V, VGS =0V VDS = 2V, IDS =10mA , , 06LG/LP Super Low Noise HEMT POWER DERATING CURVE 200 Total Power Dissipation (mW) DRAIN CURRENT vs , ) NF & Gas vs. FREQUENCY FHX04LG/LP 4 VDS=2V IDS=10mA Noise Figure (dB) Gas 2 10 Noise Figure (dB) 3 15


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PDF FHX04LG/LP, 05LG/LP, 06LG/LP 12GHz FHX04) FHX05LG/LP, FHX06LG/LP 2-18GHz fujitsu hemt
FHX35LG

Abstract: FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
Text: Transistor ( HEMT ) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency , Voltage (V) Fujfrsu FHX35LG/LP Super Low Noise HEMT NF & Gas vs. FREQUENCY 4 6 8 1012 1820 Frequency , performance. FHX35LG/LP Super Low Noise HEMT ABSOLUTE MAXIMUM RATING (Ambienl Temperature Ta , =12GHz - 1.2 1.6 dB Associated Gain Gas 8.5 10.0 - dB Thermal Resistance Rth Channel to Case - 220 300 , Super Low Noise HEMT _ POWER DERATING CURVE 300 | 250 ■| 200 ctf Q_ 150 Q CD 5 100 o CL £ 50


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PDF 12GHz FHX35LG/LP 2-18GHz FHX35LG/LP FCSI0598M200 FHX35LG FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
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