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Part Manufacturer Description Datasheet Download Buy Part
LTC2941IDCB#TRPBF Linear Technology LTC2941 - Battery Gas Gauge with I2C Interface; Package: DFN; Pins: 6; Temperature Range: -40°C to 85°C
LTC2942CDCB#TRMPBF Linear Technology LTC2942 - Battery Gas Gauge with Temperature, Voltage Measurement; Package: DFN; Pins: 6; Temperature Range: 0°C to 70°C
LTC4150CMS Linear Technology LTC4150 - Coulomb Counter/Battery Gas Gauge; Package: MSOP; Pins: 10; Temperature Range: 0°C to 70°C
LTC2941CDCB#PBF Linear Technology LTC2941 - Battery Gas Gauge with I2C Interface; Package: DFN; Pins: 6; Temperature Range: 0°C to 70°C
LTC2942IDCB#TRMPBF Linear Technology LTC2942 - Battery Gas Gauge with Temperature, Voltage Measurement; Package: DFN; Pins: 6; Temperature Range: -40°C to 85°C
LTC4150CMS#PBF Linear Technology LTC4150 - Coulomb Counter/Battery Gas Gauge; Package: MSOP; Pins: 10; Temperature Range: 0°C to 70°C

transistor HEMT GaS Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - FHR02FH

Abstract: fujitsu hemt
Text: HEMT NF & Gas vs. IDS 4 20 Gas 2 10 1 5 Noise Figure (dB) 15 3 3 , ) NF & Gas vs. FREQUENCY FHR02FH Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 , FHR02FH Super Low Noise HEMT FEATURES · · · · · Low Noise Figure: 1.2B (Typ.)@f=18GHz , Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 4-22GHz frequency


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PDF FHR02FH 18GHz FHR02FH 4-22GHz FCSI0598M200 fujitsu hemt
2004 - FHX13LG

Abstract: FHX13 FHX14LG
Text: (V) 2 4 FHX13LG, FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 , Gain (dB) NF & Gas vs. FREQUENCY FHX13LG FHX13LG, FHX14LG Super Low Noise HEMT TYPICAL NOISE , FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , Available DESCRIPTION The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor (SuperHEMT , =1mA Min. 10 35 -0.1 IGS = -10µA -3.0 Gas Rth Channel to Case AVAILABLE CASE


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz FHX13LG FHX13
2004 - FHX35LP

Abstract: FHX35LG WG 924 FHX35
Text: DESCRIPTION The FHX35LG is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, low noise , FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , Voltage Noise Figure Associated Gain IDSS gm Vp VGSO NF Gas Rth Thermal Resistance VDS = , Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200 LG 150 , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT


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PDF FHX35LG 12GHz FHX35LG 2-18GHz reliabili4888 FHX35LP WG 924 FHX35
1998 - low noise hemt

Abstract: lg s12 WG 924 FHX35LG PT 4304 a transistor fujitsu hemt
Text: DESCRIPTION The FHX35LG is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, low noise , FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , Voltage Noise Figure Associated Gain IDSS gm Vp VGSO NF Gas Rth Thermal Resistance VDS = , Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200 LG 150 , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT


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PDF FHX35LG 12GHz FHX35LG 2-18GHz FCSI0598M200 low noise hemt lg s12 WG 924 PT 4304 a transistor fujitsu hemt
2004 - FHX04

Abstract: FHX04LG FHX05LG FHX06LG Eudyna Packaging
Text: Available DESCRIPTION The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor ( HEMT , FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ.)@f=12GHz , VGSO NF Gas NF Gas NF Gas Rth Condition VDS = 2V, VGS = 0V VDS = 2V, IDS =10mA VDS = 2V , dB dB dB dB dB °C/W FHX04LG, 05LG, 06LG Super Low Noise HEMT POWER DERATING CURVE DRAIN , Drain-Source Voltage (V) NF & Gas vs. IDS FHX04LG NF & Gas vs. FREQUENCY FHX04LG 20 4 3 12


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PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FHX04 FHX04LG FHX05LG Eudyna Packaging
2004 - FHX04LG

Abstract: FHX04 FHX05LG FHX06LG low noise hemt 2-18G 12GAS
Text: Available DESCRIPTION The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor ( HEMT , FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ.)@f=12GHz , VGSO NF Gas NF Gas NF Gas Rth Condition VDS = 2V, VGS = 0V VDS = 2V, IDS =10mA VDS = 2V , dB dB dB dB dB °C/W FHX04LG, 05LG, 06LG Super Low Noise HEMT POWER DERATING CURVE DRAIN , Drain-Source Voltage (V) NF & Gas vs. IDS FHX04LG NF & Gas vs. FREQUENCY FHX04LG 20 4 3 12


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PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FHX04LG FHX04 FHX05LG low noise hemt 2-18G 12GAS
1998 - GaAs FET HEMT Chips

Abstract: No abstract text available
Text: DESCRIPTION The FHX02X is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, ultra-low , FHR02X GaAs FET & HEMT Chips NF & Gas vs. IDS 3 Noise Figure (dB) f=18GHz VDS=2V 2 NF 1 Gas 11 10 9 8 7 , FHR02X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.0dB (Typ.)@f=18GHz High , 10mA f = 18GHz Limit Typ. Max. 30 45 -0.7 1.0 60 -1.5 1.2 Unit mA mS V V dB Associated Gain Gas , 4 NF & Gas vs. Frequency 4 VDS=2V IDS=10mA Noise Figure (dB) 3 Gas 15 20 Associated Gain (dB


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PDF FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 GaAs FET HEMT Chips
1998 - FHX04LG

Abstract: FHX04 FHX05LG FHX06LG TVRO 4232 gm fujitsu hemt FHX*LG
Text: Available DESCRIPTION The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor ( HEMT , FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ.)@f=12GHz , VGSO NF Gas NF Gas NF Gas Rth Condition VDS = 2V, VGS = 0V VDS = 2V, IDS =10mA VDS = 2V , dB dB dB dB °C/W FHX04LG, 05LG, 06LG Super Low Noise HEMT POWER DERATING CURVE DRAIN , Drain-Source Voltage (V) NF & Gas vs. IDS FHX04LG NF & Gas vs. FREQUENCY FHX04LG 20 4 3 12


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PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FCSI0598M200 FHX04LG FHX04 FHX05LG TVRO 4232 gm fujitsu hemt FHX*LG
1998 - FHR02FH

Abstract: transistor hemt Low Noise HEMT
Text: HEMT NF & Gas vs. IDS 4 20 Gas 2 10 1 5 Noise Figure (dB) 15 3 3 , ) NF & Gas vs. FREQUENCY FHR02FH Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 , FHR02FH Super Low Noise HEMT FEATURES · · · · · Low Noise Figure: 1.2B (Typ.)@f=18GHz , Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 4-22GHz frequency


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PDF FHR02FH 18GHz FHR02FH 4-22GHz FCSI0598M200 transistor hemt Low Noise HEMT
2000 - low noise hemt

Abstract: transistor hemt FHX35LG transistor HEMT GaS rf transistor 3742
Text: FHX35LG is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, low noise and high gain , FHX35LG Super Low Noise HEMT NF & Gas vs. FREQUENCY 20 VDS=3V IDS=10mA Noise Figure (dB) Noise Figure , FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , ) (0,1) (1,2) (1,2) Symbol IDSS gm Vp VGSO NF Gas Rth Test Conditions VDS = 2V, VGS = 0V VDS = 2V , Low Noise HEMT POWER DERATING CURVE 300 Total Power Dissipation (mW) 250 200 150 100 50 0 0 50 100


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PDF FHX35LG 12GHz FHX35LG 2-18GHz low noise hemt transistor hemt transistor HEMT GaS rf transistor 3742
2004 - Not Available

Abstract: No abstract text available
Text: DESCRIPTION The FHX35LG is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, low noise , FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B (Typ.)@f=12GHz • High , Source Breakdown Voltage Noise Figure Associated Gain IDSS gm Vp VGSO NF Gas Rth Thermal , FHX35LG Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200 LG , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT NF


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PDF FHX35LG 12GHz FHX35LG 2-18GHz the88
2004 - Not Available

Abstract: No abstract text available
Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB (Typ.)@f=12GHz , Packaging Available DESCRIPTION The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency , Symbol IDSS gm Vp VGSO NF Gas NF Gas NF Gas Rth Condition VDS = 2V, VGS = 0V VDS = 2V , Unit mA mS V V dB dB dB dB dB dB °C/W FHX04LG, 05LG, 06LG Super Low Noise HEMT POWER


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PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz
1998 - transistor 1345

Abstract: FHR02X FHX02X GaAs FET HEMT Chips
Text: DESCRIPTION The FHX02X is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, ultra-low , & HEMT Chips NF & Gas vs. IDS DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 9 2 8 NF 7 1 6 0 10 Vgs =0V Drain Current (mA) 10 Gas Associated Gain (dB) 30 -0.4V , FHR02X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.0dB (Typ.)@f=18GHz High , Gas VDS = 2V IDS = 10mA f = 18GHz 8 9 - dB Rth Channel to Case - 220


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PDF FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 transistor 1345 FHR02X GaAs FET HEMT Chips
1998 - high power FET transistor s-parameters

Abstract: FHR02X FHX02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip
Text: DESCRIPTION The FHX02X is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, ultra-low , & HEMT Chips NF & Gas vs. IDS DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 9 2 8 NF 7 1 6 0 10 Vgs =0V Drain Current (mA) 10 Gas Associated Gain (dB) 30 -0.4V , FHR02X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.0dB (Typ.)@f=18GHz High , Gas VDS = 2V IDS = 10mA f = 18GHz 8 9 - dB Rth Channel to Case - 220


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PDF FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 high power FET transistor s-parameters FHR02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip
2004 - FHR02X

Abstract: FHX02X GaAs FET HEMT Chips
Text: DESCRIPTION The FHX02X is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, ultra-low , FHR02X GaAs FET & HEMT Chips NF & Gas vs. IDS DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 9 2 8 NF 7 1 6 0 10 Vgs =0V Drain Current (mA) 10 Gas Associated Gain (dB) 30 , FHR02X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.0dB (Typ.)@f=18GHz High , 1.0 1.2 dB Gas VDS = 2V IDS = 10mA f = 18GHz 8 9 - dB Rth Channel to


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PDF FHR02X 18GHz FHX02X 4-22GHz FHR02X GaAs FET HEMT Chips
1998 - FHX13LG

Abstract: fujitsu hemt FHX13 FHX14LG
Text: (V) 2 4 FHX13LG, FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 , Gas vs. FREQUENCY FHX13LG FHX13LG, FHX14LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE , FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , Available DESCRIPTION TM The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor , =10mA VDS = 2V, IDS =1mA Min. 10 35 -0.1 IGS = -10µA -3.0 Gas Rth Channel to Case


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz FCSI0598M200 FHX13LG fujitsu hemt FHX13
15A03

Abstract: No abstract text available
Text: (V) 2 4 FHX13LG, FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 , Gas vs. FREQUENCY FHX13LG FHX13LG, FHX14LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE , FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB (Typ.)@f=12GHz , Transistor (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz , VDS = 2V, IDS =1mA IGS = -10µA NF Gas Rth Channel to Case Note: RF parameters for LG


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz 15A03
2004 - Eudyna Packaging

Abstract: No abstract text available
Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , DESCRIPTION The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor (SuperHEMT) intended for general , IDSS gm Vp VGSO NF Gas NF FHX14LG Gas Rth Condition VDS = 2V, VGS =0V VDS = 2V, IDS =10mA VDS = 2V , 1 FHX13LG, FHX14LG Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW , 0 1 2 4 Drain-Source Voltage (V) 2 FHX13LG, FHX14LG Super Low Noise HEMT NF &


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz Eudyna Packaging
2004 - FHX02X

Abstract: GaAs FET HEMT Chips FHR02X transistor hemt
Text: DESCRIPTION The FHX02X is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, ultra-low , FHR02X GaAs FET & HEMT Chips NF & Gas vs. IDS DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 9 2 8 NF 7 1 6 0 10 Vgs =0V Drain Current (mA) 10 Gas Associated Gain (dB) 30 , FHR02X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.0dB (Typ.)@f=18GHz High , 1.0 1.2 dB Gas VDS = 2V IDS = 10mA f = 18GHz 8 9 - dB Rth Channel to


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PDF FHR02X 18GHz FHX02X 4-22GHz GaAs FET HEMT Chips FHR02X transistor hemt
2000 - low noise hemt

Abstract: FHX13LG FHX*LG low noise hemt transistor FHX13 FHX14LG
Text: (V) 2 4 FHX13LG, FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 , Gas vs. FREQUENCY FHX13LG FHX13LG, FHX14LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE , FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , Available DESCRIPTION TM The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor , =10mA VDS = 2V, IDS =1mA Min. 10 35 -0.1 IGS = -10µA -3.0 Gas Rth Channel to Case


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz low noise hemt FHX13LG FHX*LG low noise hemt transistor FHX13
1998 - FHX35LP

Abstract: FHX35LG fujitsu hemt
Text: Mobility Transistor ( HEMT ) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz , Low Noise HEMT NF & Gas vs. IDS 20 Gas 2 10 NF 1 5 3 Noise Figure (dB) 15 , (dB) NF & Gas vs. FREQUENCY FHX35LG/LP Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 , FHX35LG/LP Super Low Noise HEMT FEATURES · · · · · Low Noise Figure: 1.2B (Typ.)@f=12GHz , Voltage Noise Figure Associated Gain IDSS gm Vp VGSO NF Gas Rth Thermal Resistance VDS =


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PDF FHX35LG/LP 12GHz FHX35LG/LP 2-18GHz FCSI0598M200 FHX35LP FHX35LG fujitsu hemt
fujitsu hemt

Abstract: FHX04 FHX04LG 4232 gm CQ 527
Text: Available DESCRIPTION The FHX04LG/LP, FHX05LG/LP, FHX06LG/LP is a High Electron Mobility Transistor ( HEMT , . Super Low Noise HEMT ABSOLUTE MAXIMUM RATING (Ambienl Temperature Ta=25°C) Item Symbol Rating , FHX04LG/LP NF - 0.75 0.85 dB Associated Gain Gas vds = 2V, Ids = 10mA, f = 12GHz 9.5 10.5 - dB Noise Figure FHX05LG/LP NF - 0.9 0.11 dB Associated Gain Gas 9.5 10.5 - dB Noise Figure FHX06LG/LP NF - 1.1 1.35 dB Associated Gain Gas 9.5 10.5 - dB Thermal Resistance Rth Channel to Case - 300 400


OCR Scan
PDF FHX04LG/LP, 05LG/LP, 06LG/LP 12GHz FHX04) FHX05LG/LP, FHX06LG/LP 2-18GHz fujitsu hemt FHX04 FHX04LG 4232 gm CQ 527
1998 - FHX13LP

Abstract: FHX14lp FHX13LG
Text: Noise HEMT NF & Gas vs. FREQUENCY FHX13LG 3.0 VDS=2V IDS=10mA Noise Figure (dB) Gas 2 10 Noise Figure , FHX13LG/LP, 14LG/LP Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz , Available DESCRIPTION The FHX13LG/LP, FHX14LG/LP is a Super High Electron Mobility TM Transistor , ) Symbol IDSS gm Vp VGSO NF Gas NF FHX14LG/LP Gas Rth Condition VDS = 2V, VGS =0V VDS = 2V, IDS =10mA , 1999 1 FHX13LG/LP, 14LG/LP Super Low Noise HEMT POWER DERATING CURVE 200 Total Power


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PDF FHX13LG/LP, 14LG/LP 12GHz FHX13) FHX14LG/LP 2-18GHz FCSI0598M200 FHX13LP FHX14lp FHX13LG
1998 - fujitsu hemt

Abstract: No abstract text available
Text: Available DESCRIPTION The FHX04LG/LP, FHX05LG/LP, FHX06LG/LP is a High Electron Mobility Transistor ( HEMT , FHX04LG/LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ , : LG/LP Symbol IDSS gm Vp VGSO NF Gas NF Gas NF Gas Rth Condition VDS = 2V, VGS =0V VDS = 2V, IDS =10mA , , 06LG/LP Super Low Noise HEMT POWER DERATING CURVE 200 Total Power Dissipation (mW) DRAIN CURRENT vs , ) NF & Gas vs. FREQUENCY FHX04LG/LP 4 VDS=2V IDS=10mA Noise Figure (dB) Gas 2 10 Noise Figure (dB) 3 15


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PDF FHX04LG/LP, 05LG/LP, 06LG/LP 12GHz FHX04) FHX05LG/LP, FHX06LG/LP 2-18GHz fujitsu hemt
FHX35LG

Abstract: FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
Text: Transistor ( HEMT ) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency , Voltage (V) Fujfrsu FHX35LG/LP Super Low Noise HEMT NF & Gas vs. FREQUENCY 4 6 8 1012 1820 Frequency , performance. FHX35LG/LP Super Low Noise HEMT ABSOLUTE MAXIMUM RATING (Ambienl Temperature Ta , =12GHz - 1.2 1.6 dB Associated Gain Gas 8.5 10.0 - dB Thermal Resistance Rth Channel to Case - 220 300 , Super Low Noise HEMT _ POWER DERATING CURVE 300 | 250 ■| 200 ctf Q_ 150 Q CD 5 100 o CL £ 50


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PDF 12GHz FHX35LG/LP 2-18GHz FHX35LG/LP FCSI0598M200 FHX35LG FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
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