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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor GDV 65A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
3n84

Abstract: 2N4983 SCR nomenclature, General electric 2N4985 2N4987 2n4990 scr 6A 2N4984 n4148 GE 2N4992
Text: Transistor Characteristics 90.19 Unijunction Frequency Divider 90.72 Complementary Unijunction Transistors , Transistor 126 Silicon Controlled Switch 3N86 The General Electric Type 3N86 is a PLANAR PNPN silicon , worst case circuit design. The 3N86 can be considered an integrated PNP-NPN transistor pair in a , extremely sensitive SCR, as a complementary SCR, or as a " transistor " with "latching" capabilities. Type , transistor integrated pair All planar, completely oxide passivated Leads to all four semiconductor regions


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PDF 200fi? IN4I48 IN4I46 500PPS 3n84 2N4983 SCR nomenclature, General electric 2N4985 2N4987 2n4990 scr 6A 2N4984 n4148 GE 2N4992
2007 - 2399-050

Abstract: NJM2399 jrc 2399-050 NJM2399TLA2050 IC JRC 2399-050
Text: NJM2399 6.5A High Power DC/DC Converter Controller IC GENERAL DESCRIPTION PACKAGE OUTLINE The NJM2399 is a high power step down DC/DC converter IC. It incorporates 6.5A power transistor , ±2% , Switching Power Supply Control Internal High Power Transistor 6.5A (min.) Fixed Frequency Oscillator , front view). BLOCK DIAGRAM 6.5A Power Transistor 4 Current Sense Amplifier 2 Current Detection Transistor Thermal Shutdown Reference Voltage ON/OFF Oscillator S VREF Q R


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PDF NJM2399 NJM2399 NJM2399TLA2050 72kHz 2399-050 jrc 2399-050 NJM2399TLA2050 IC JRC 2399-050
Not Available

Abstract: No abstract text available
Text: applications Characterized as PNPN and also as transistor integrated pair All planar, completely oxide , . 3N8B V c K n a t -VPN @ 25°C <5> 150°C @ 25°C @ 150°C @25°C @ 25°C 25°C — 65 °C @ 25°C @ 25"C @ - 65 °C @ 25°C @ ~ 65 °C @ 25°C VCE. NPN @ 25°C 1.0 20 1.0 20 , max Vmax V max V max ma max ma max ma max ma max V max V max 25°C i - 65 °C CUTOFF CHARACTERISTICS Forward Blacking Current 1.0 50 Ma max Ma max @25°C @ 25° C @ - 65 °C @ 25°C @


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Not Available

Abstract: No abstract text available
Text: Features: • MIL-PRF-19500/486 Qualified • Base lead provided for conventional transistor biasing • High gain, high voltage transistor • Miniature package saves circuit board area • High voltage , .2V Input Diode Continuous Forward Current at (or below) 65 ° Free-Air Temperature (see note 1 , .1A Continuous Transistor Power Dissipation at (or below) 25° Free-Air Temperature (see Note 2 , .-55° to +125° C C Storage Temperature.- 65Â


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PDF 4N22U 4N23U 4N24U MIL-PRF-19500/486 4N22U, 4N23U 4N24U
3N81

Abstract: IN4148 anode cathode thyristor igc 2N4983 eto thyristor 3N84 TRANSISTOR BO 344 2N4987 thyristor eto IR SCR 16 RC 100A
Text: Transistor Characteristics 90.19 Unijunction Frequency Divider 90.72 Complementary Unijunction Transistors , Transistor 126 Silicon Control Switch 3N81.2 65 100 volts 65 100 volts 5 5 volts 200 200 ma 1.0 1.0 , worst-case circuit design. Types 3N81 and 3N82 can be considered an integrated PNP-NPN transistor pair in a , an extremely sensitive SCR, as a complementary SCR, or as a " transistor " with "latching" capabilities , also as transistor integrated pair • All planar, completely oxide passivated • Leads to all four


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Not Available

Abstract: No abstract text available
Text: A '21 03 SINGLE-TURN TRIMMERS oo MODEL 80 Description TO-9 Transistor Case , Non-Nutrient 1,000 Hours Commercial Solvents —55°Cto+125°C Commercial Solvents — 65 °C to +175°C 30g, 10 to 2000 Hz 10g, 6 ms 96 Hours Non-Nutrient 1,000 Hours — 65 °Cto+125°C T P&H , +125°C 20g 100g — 65 °Cto+150°C 30g, 10 to 2000 Hz 50g, 11 ms 96 Hours Non-Nutrient 1,000 Hours — 65 °Cto+125'C Commercial Solvents Commercial Solvents TERMINAL STYLES Side Adjust Top


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PDF 10ftto2Mn 100ft 100ft 100to Wat50Â 000vac 5Wat70Â 000MO 1000ENR 20KIT
Not Available

Abstract: No abstract text available
Text: €¢ • High Reliability Base lead provided for conventional transistor biasing Very high gain, high voltage transistor Stability over wide temperature range. +1kVdc electrical isolation Screening , . 3V Input Diode Continuous Forward Current at (or below) 65 ° Free-Air Temperature (see note 2 , . 50mA Continuous Transistor Power Dissipation at (or below) 25° Free-Air Temperature (see Note 3 , . - 65 ° to +150° C C Operating Free-Air Temperature Range


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Not Available

Abstract: No abstract text available
Text: 66287 TRANSISTOR OUTPUT GULL WING DUAL CHANNEL OPTOCOUPLERS MICROPAC OPTOELECTRONIC , .6V Input Diode Continuous Forward Current at (or below) 65 ° Free-Air Temperature (see note 1 , .150mA Continuous Transistor Power Dissipation at (or below) 25° Free-Air Temperature (see Note 2 , . - 65 ° to +150° C C Operating Free-Air Temperature Range , .) .240° C Notes: 1. Derate linearly above + 65 ° free-air temperature at the rate of 1.15 mA/° C C


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Not Available

Abstract: No abstract text available
Text: ‚·      High Reliability Base lead provided for conventional transistor biasing Very high gain, high voltage transistor Stability over wide temperature range. +1kVdc , . 3 V Input Diode Continuous Forward Current at (or below) 65 ° Free-Air Temperature (see note 2 , . 50 mA Continuous Transistor Power Dissipation at (or below) 25° Free-Air Temperature (see Note 3 , . - 65 ° to +125° C C Operating Free-Air Temperature Range


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2013 - Not Available

Abstract: No abstract text available
Text: 66296 PROTON RADIATION TOLERANT QUAD CHANNEL, 20 PIN LCC, TRANSISTOR OUTPUT OPTOCOUPLER , ‚· High Reliability  Base lead provided for conventional transistor biasing  +1 kVdc electrical , . 50 mA Continuous Transistor Power Dissipation (Note 3 , . - 65 °C to +150°C Operating Free-Air Temperature Range , linearly at the rate of 0.67 mW/°C above 65 °C case. 3. Derate linearly at the rate of 2.3 mW/°C above


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1999 - optocoupler 4n24

Abstract: No abstract text available
Text: €¢ Overall current gain.1.5 typical (4N24) Base lead provided for conventional transistor biasing Rugged package High gain, high voltage transistor +1kV electrical isolation Eliminate ground loops Level , .2V Input Diode Continuous Forward Current at (or below) 65 °C Free-Air Temperature (see note 1 , .50mA Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2 , . - 65 °C to +125°C Operating Free-Air Temperature Range


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PDF MIL-PRF-19500 optocoupler 4n24
Not Available

Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 2N489-2N494, A, B NPN SILICON UNIJUNCTION TRANSISTOR Silicon , Reverse Voltage (TJ = 150°C) 60 V Operating Temperature Range - 65 ° to +140°C Operating Temperature Range (Stabilized) - 65 ° to +175°C Storage Temperature Range - 65 ° to +175°C , Street Kenilworth NJ 07033 USA NPN SILICON UNIJUNCTION TRANSISTOR phone +1.908.245-7200 fax , 2N489-2N494, A, B 144 Market Street Kenilworth NJ 07033 USA NPN SILICON UNIJUNCTION TRANSISTOR phone


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PDF 2N489-2N494, MIL-PRF-19500, 450mW 600mW
2004 - sot89 "NPN TRANSISTOR"

Abstract: MARKING 7A SOT89 NY TRANSISTOR MAKING ZX5T869Z ZX5T869ZTA
Text: ZX5T869Z 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 25V : RSAT = 25m ; IC = 6.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and , ; RSAT = 25m at 6.5A SOT89 · 6.5 amps continuous current · Up to 20 amps peak current · Very low , mV 160 200 mV I C = 2A, I B = 10mA* I C = 6.5A , I B = 150mA* I C = 6.5A , I B = 150mA


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PDF ZX5T869Z sot89 "NPN TRANSISTOR" MARKING 7A SOT89 NY TRANSISTOR MAKING ZX5T869Z ZX5T869ZTA
2010 - TRANSISTOR 1300

Abstract: No abstract text available
Text: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar , ) BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 1.3 Applications ̈ L-band , LDMOS L-band radar power transistor 5. Thermal characteristics Table 5. Thermal characteristics , Semiconductors LDMOS L-band radar power transistor 7. Application information 7.1 Impedance information


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PDF BLL6H1214-500 BLL6H1214-500 TRANSISTOR 1300
Not Available

Abstract: No abstract text available
Text: -8O OSeries oscillators O use a silicon transistor chip as a negative resistance oscillator. The , milliseconds. The VTO-8850 combines a bipolar transistor oscillator with a GaAs FET buffer stage. This GaAs , in TO-8 transistor cans for simple installation in a conventional 50-ohm microstripline PC board , Electrical and Performance Specifications Guaranteed Specifications @ 25°C Case Temperature (0° to + 65 , ±1.5 dB 0° to + 65 °C 8 MHz 800-1400 MHz 20 mW/+13 dBm ±1.5 dB 0° to + 65 °C 10 MHz 900-1600


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PDF TF-801 TF-802 D014442
1999 - Not Available

Abstract: No abstract text available
Text: 61084 Mii SURFACE MOUNT (NPN) GENERAL PURPOSE TRANSISTOR (2N2222AUA) OPTOELECTRONIC , DESCRIPTION The 61084 is a hermetically sealed ceramic surface mount general purpose switching transistor , ) . - 65 °C to +200°C Storage Temperature . - 65 °C to +200°C Lead Soldering Temperature (vapor phase reflow for 30 seconds , : OPTOSALES @ MICROPAC.COM 61084 SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2222AUA


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PDF 2N2222AUA) MIL-PRF-19500 MIL-PRF-19500. 2N2222AUA
2010 - 6R280C6

Abstract: 6r280 to262 pcb footprint Diode SMD SJ 19 IPA60R280C6 TRANSISTOR SMD MARKING CODE IPI60R280C6 IPP60R280C6 IPW60R280C6 SMD mosfet MARKING code C6
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOSTM C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOSTM C6 Power Transistor 1 IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 IPW60R280C6 , . 2.1, 2010-02-09 600V CoolMOSTM C6 Power Transistor IPx60R280C6 Table of Contents Table of , Rev. 2.1, 2010-02-09 600V CoolMOSTM C6 Power Transistor IPx60R280C6 Maximum ratings 2


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PDF IPx60R280C6 IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 IPW60R280C6 6R280C6 6r280 to262 pcb footprint Diode SMD SJ 19 IPA60R280C6 TRANSISTOR SMD MARKING CODE IPI60R280C6 IPP60R280C6 IPW60R280C6 SMD mosfet MARKING code C6
2009 - 6R280C6

Abstract: Diode SMD SJ 65a
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS™ C6 Power Transistor IPx60R280C6 Data Sheet Rev. 0.9, 2009-09-07 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R280C6, IPB60R280C6 IPI60R280C6 , 600V CoolMOS™ C6 Power Transistor IPx60R280C6 Table of Contents Table of Contents 1 , Preliminary Data Sheet 3 Rev. 0.9, 2009-09-07 600V CoolMOS™ C6 Power Transistor IPx60R280C6


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PDF IPx60R280C6 IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 IPW60R280C6 6R280C6 Diode SMD SJ 65a
1999 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR (2N2222AUB) OPTOELECTRONIC PRODUCTS DIVISION Applications: Hermetically sealed , a hermetically sealed ceramic surface mount general purpose switching transistor . This miniature , ) . - 65 °C to +200°C Storage Temperature . - 65 °C to +200°C Lead Soldering Temperature (vapor phase reflow for 30 seconds , SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2222AUB) ELECTRICAL CHARACTERISTICS TA = 25Â


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PDF 2N2222AUB) OT-23 MIL-PRF-19500 2N2222AUB
2004 - automotive ignition tip162

Abstract: TIP162 npn darlington transistor 150 watts F 9016 transistor TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON TIP162A tip16
Text: TIP162 Darlington Power Transistor NPN Silicon Power Darlington Transistors are designed for use , Power Transistor E 14.81 15.22 380 Volts 125 Watts F 2.92 3.23 J 0.89 , Temperature Range Page 1 380 V A 31/05/05 V1.0 TIP162 Darlington Power Transistor Thermal , , IC = 0) IEBO - 100 hFE 200 - Collector-Emitter Saturation Voltage (IC = 6.5A , IB = 0.1A) (IC = 10A, IB = 1.0A) VCE(sat) - Base-Emitter Saturation Voltage (IC = 6.5A , IB


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PDF TIP162 automotive ignition tip162 TIP162 npn darlington transistor 150 watts F 9016 transistor TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON TIP162A tip16
2009 - 6R280C6

Abstract: TRANSISTOR SMD MARKING CODE IPB60R280C6 IPW60R280C6 6r280 IPA60R280C6 IPI60R280C6 IPx60R280C6 SMD TRANSISTOR MARKING code TC PG-TO263
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOSTM C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.0, 2009-09-21 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOSTM C6 Power Transistor 1 IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 , . 2.0, 2009-09-21 600V CoolMOSTM C6 Power Transistor IPx60R280C6 Table of Contents Table of , Rev. 2.0, 2009-09-21 600V CoolMOSTM C6 Power Transistor IPx60R280C6 Maximum ratings 2


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PDF IPx60R280C6 IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 IPW60R280C6 6R280C6 TRANSISTOR SMD MARKING CODE IPB60R280C6 IPW60R280C6 6r280 IPA60R280C6 IPI60R280C6 IPx60R280C6 SMD TRANSISTOR MARKING code TC PG-TO263
2010 - 6R280C6

Abstract: 6r280 Diode SMD SJ 028 IPA60R280C6 IPB60R280C6 IPI60R280C6 Diode SMD SJ 24 IPx60R280C6 IPW60R280C6 IPP60R280C6
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOSTM C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOSTM C6 Power Transistor 1 IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 , . 2.1, 2010-02-09 600V CoolMOSTM C6 Power Transistor IPx60R280C6 Table of Contents Table of , Rev. 2.1, 2010-02-09 600V CoolMOSTM C6 Power Transistor IPx60R280C6 Maximum ratings 2


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PDF IPx60R280C6 IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 IPW60R280C6 6R280C6 6r280 Diode SMD SJ 028 IPA60R280C6 IPB60R280C6 IPI60R280C6 Diode SMD SJ 24 IPx60R280C6 IPW60R280C6 IPP60R280C6
VTO-8090

Abstract: No abstract text available
Text: fixture out­ lines. Avantek® VTO-8000 Series oscillators use a silicon transistor chip as a , GHz tuning range, com­ bines a bipolar transistor oscillator with a GaAs FET buffer stage. This , in TO-8 transistor cans for simple installation in a conventional 50-ohm microstripline PC board , Guaranteed Specifications @ 25°C Case Temperature (0° to + 65 °C Operating Temperature) VTO-8030 VTO-8040 VTO-8060 VTO-8080 VTO-8090 300-450 MHz 10 mW/+10 dBm ±1.5dB 0° to + 65 °C 8 MHz


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PDF VTO-8000 VTO-8090
Not Available

Abstract: No abstract text available
Text: lead provided for conventional transistor biasing • Rugged package • High gain, high voltage transistor • ±1 kV electrical isolation • • • • • Eliminate ground loops Level , collector of the transistor is isolated from the case. The 4N22A, 4N23A and 4N24A can be tested to customer , . 50 mA Continuous Transistor Power Dissipation at (or below) 25° Free-Air Temperature (see Note 2 , .- 65 ° to +125° C C Operating Free-Air Temperature Range


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PDF 4N22A 4N23A 4N24A MIL-PRF-19500/486 4N24A) 4N22A,
Not Available

Abstract: No abstract text available
Text: FAX: (973) 376-8960 TIP161 Silicon NPN Darlington Power Transistor DESCRIPTION 1 â , Darlington Power Transistor TIP161 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified , lc= 6.5A ,lB=0.1A 2.8 V Collector-Emitter Saturation Voltage lc=10A, I B =1A 2.9 V Base-Emitter Saturation Voltage I C = 6.5A ,I B =0.1A 2.2 V ICEO Collector Cutoff current VCE , Storage Time Fall Time 0.3 us Vcc = 33V, lc = 6.5A , 1.5 us tp= 20 u s; Duty Cycle=S2


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PDF TIP161
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