The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor F 585-34 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - w32 transistor

Abstract: w41 transistor w33 transistor transistor w32 transistor p31 transistor k33 34 ic 4559 transistor 4559 455a transistor k33
Text: ) f (HSOCO): 500KHz Typ. (Ta=25VDD=3V) f (RING): 250KHz Typ. (Ta=25VDD=3V) f (LSOCO): 50KHz Typ. (Ta , Frequency divided by 4 mode Frequency divided by 8 mode System clock f (HSOCO) f (XIN) f (XCIN) f (LSOCO) August 2008 (The same as 455A Group) 4559 Group R/W (The same as 455A Group) f (RING , on-chip oscillator ( f (LSOCO) oscillation available Clock control register RG Low-speed on-chip oscillator RG3 ( f (LSOCO) control bit at RESET: 0002 4559 Group at power down: state retained No


Original
PDF M3455AG8FP M3455AG8-XXXFP) M34559G6FP M34559G6-XXXFP) M3455AGCFP M3455AGC-XXXFP) REC05B0047-0200/Rev w32 transistor w41 transistor w33 transistor transistor w32 transistor p31 transistor k33 34 ic 4559 transistor 4559 455a transistor k33
1999 - ADM6315-31D4ARTZR7

Abstract: ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor
Text: . Rev. F Information furnished by Analog Devices is believed to be accurate and reliable. However, no , HISTORY 12/12-Rev. E to Rev. F Added Automotive Part , : Initial Version Rev. F | Page 2 of 12 Data Sheet SPECIFICATIONS VCC = full operating range, TA = , Rev. F | Page 3 of 12 ADM6315 ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted. Table 2 , conditions for extended periods may affect device reliability. Rev. F | Page 4 of 12 Data Sheet PIN


Original
PDF OT-143 ADM6315 ADM811 ADM6315 D00081-0-12/11 ADM6315-31D4ARTZR7 ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor
smd transistor marking 12W

Abstract: smd transistor 12W 3 pins SMD transistor Marking 13w transistor SMD 12W TRANSISTOR SMD 13W smd transistor 12W 98 transistor te 2305 smd transistor LY smd transistor 12W 12W smd transistor
Text: an outline drawing o f the Power Mold Transistor . The molded plastic por tion o f this unit , circuitboard, to significantly increase the collector power dissipation o f the collector. (4) NPM Transistor Figure 4 shows an outline drawing o f the Neo Power Mold Transistor NPM. The molded plastic portion o f , Outline Drawing o f the Power Mold Transistor 95 3_ Liirn. ? i *M * «ita « 1. ·*«( * C , ) Super Mini Transistor The collector power dissipation o f the Super Mini Transistor is lOOmW to 150mW


OCR Scan
PDF O-126 O-220 O-236 OT-23 O-220SM O-22QSM T0-220SM smd transistor marking 12W smd transistor 12W 3 pins SMD transistor Marking 13w transistor SMD 12W TRANSISTOR SMD 13W smd transistor 12W 98 transistor te 2305 smd transistor LY smd transistor 12W 12W smd transistor
1999 - Not Available

Abstract: No abstract text available
Text: . The ADM6315 is available in a cost- and space-efficient SOT-143 package. Rev. F Information , /12—Rev. E to Rev. F Added Automotive Part , 1999—Revision 0: Initial Version Rev. F | Page 2 of 12 Data Sheet ADM6315 SPECIFICATIONS , Resistance RESET OUTPUT Output Voltage Output Leakage Current 1 32 100 500 63 Rev. F , . F | Page 4 of 12 θJA 330 Unit °C/W Data Sheet ADM6315 PIN CONFIGURATION AND


Original
PDF OT-143 ADM6315 ADM811 OT-143 D00081-0-12/11
Not Available

Abstract: No abstract text available
Text: T h e rm a l Stability a n d R adia tion I Transistor C irc u ii One o f the characteristics o f , pera ture rises in a condition that certain voltage is applied to a transistor , the conductivity o f , b o and g m - A V b e to col lector current. (The g m o f the transistor is defined by g m - 3I c , dissipation (Pcmax) o f a transistor , if th e therm al stability of the bias circuit described in the previous , contact sta te betw een transistor case and heat sink, and is g rea tly influenced by plainness o f


OCR Scan
PDF 2SC3626
yg6260

Abstract: 2-10a1a AC701 2-16B1a 2-10R1A
Text: perature, th e following pre cautions should be observed to maximize the effect o f the heat sink and minim ize transistor stress. (1) Silicone grease A thin, even layer o f silicone grease should be applied , packages and thus shorten the life o f the transistor . The base oil o f Toshiba Silicone Grease YG6260 does n o t easily separate and thus does not adversely affect the life o f transistor . This does not , o f precau tions to be observed when handling these devices. Figure 4 (TO -3P(H )(IS), Toshiba


OCR Scan
PDF 2-16E2A) yg6260 2-10a1a AC701 2-16B1a 2-10R1A
2007 - details of ad 592

Abstract: M37549G2-XXXFP M37549G2FP M37549G1-XXXFP M37549G1FP M37548G3-XXXFP M37548G3FP M37548G2-XXXFP M37548G2FP M37548G1-XXXFP
Text: transistor is in the cut-off state) Vcc-Icc (STP) 3.5 10 f (XIN)=8MHz f (XIN)=6MHz f (XIN)=4MHz , (ceramic oscillation, Ta = 25 °C, output transistor is in the cut-off state) f (XIN)-Icc (A/D conversion , middle-speed mode (ceramic oscillation, Ta = 25 °C, output transistor is in the cut-off state) f (XIN)-Icc (A , 25 °C, output transistor is in the cut-off state) f (XIN)-Icc (A/D conversion not executed) 4.0 , transistor is in the cut-off state) f (XIN)-Icc (WIT) 2.5 Power Supply Current Icc [mA] Vcc=5.0V Vcc


Original
PDF M37548G1-XXXFP M37548G2-XXXFP M37548G3-XXXFP M37549G1-XXXFP M37549G2-XXXFP M37549G3-XXXFP M37548G1FP M37548G2FP M37548G3FP M37549G1FP details of ad 592 M37549G2FP
1999 - high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Abstract: Glossary of Microwave Transistor Terminology
Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types , transistor action. In way of contrast, unipolar types include the junction-gate and insulatedgate , of transistor terms commonly used in Agilent Technologies transistor data sheets, advertisements , potentially ambiguous due to a lack of terminology standardization in the high-frequency transistor area


Original
PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology
2009 - ultra low noise RF Transistor

Abstract: BFR740F BFP740F sdars application note no. 122 infineon b 58 468 11 A 122 transistor Low Noise R.F amplifier TRANSISTOR 12 GHZ sdars lna
Text: o . 1 2 2 I n f i n e on ' s B F P 7 4 0 F U l tr a L ow N o i s e R F T r a n s i s t o r i n 2 . 33 G H z S D A R S L o w N o i s e Amplifier Application R F & P r o t e c ti o n D e v i c e s , 's BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low 1 Infineon's BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low Noise Amplifier Application Applications · LNA stage for Satellite , Transistor in TSFP-4 package is shown in a +3.0 V 2.33 GHz LNA application. Amplifier draws 8.9 mA. +5 V


Original
PDF BFP740F ultra low noise RF Transistor BFR740F sdars application note no. 122 infineon b 58 468 11 A 122 transistor Low Noise R.F amplifier TRANSISTOR 12 GHZ sdars lna
transister

Abstract: 45 transister pnp transister symbol 2SA1362 S-8470 S-8470AFS S-8470BFS S-8470CFS types of transister
Text: = 60 mA Ta = 25°C PS ^ » 50 Cl(^ F ) 100 2.3 Vout3/ Vout4 (external transistor ) 100 , (^ F ) 100 50 CL(A/ F ) 100 2.5 VouT4 (internal transistor ) 100 Ringing amount 50 (mV) V|N 0—>10 V , transistor ) 100 Ringing amount 50 (mV) Cu= 10// F I0ut = 15 mA Ta = 25°C PS = "H" 4 6 8 10 AVIN(V) (0â , transistor ) 200 Ringing amount 100 (mA) I V|N = 0-»10V CL= 10^/ F ¡OUT = 15 mA PS = "H 0 1 , 60 mA Ta = 25°C PS = "H" \ \ X ^ X s — . 50 Cl(^ F ) 100 4.3 Vqut3. Vqut4 (external transistor


OCR Scan
PDF S-8470CFS 14through17: S-8470 transister 45 transister pnp transister symbol 2SA1362 S-8470AFS S-8470BFS S-8470CFS types of transister
2000 - siliconix vmp4

Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ VMP4 IRF540 mosfet with maximum VDS 30 V Class E amplifier IRF510 SEC mosfet
Text: , where V is the capacitor's initial voltage at transistor turn-on and f is the operating frequency , transistor turn-off, T =1/ f is the period of the operating frequency, f , and "0.01" allocates about 1% loss , and Cbc.) 15. S. R. Mazumder, A. Azizi, and F . E. Gardiol, "Improvement of a Class-C Transistor , the transistor operates as an on/off switch and the load network shapes the voltage and current waveforms to prevent simultaneous high voltage and high current in the transistor ; that minimizes power


Original
PDF 99CH36282C. KE67VWU, siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ VMP4 IRF540 mosfet with maximum VDS 30 V Class E amplifier IRF510 SEC mosfet
2008 - transistor s 1014

Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200
Text: HVV1214-025 HVV1214-025 L-Band Radar L-Band Radar Pulsed Power Transistor HVV1214-075 Pulsed Power Transistor 1200-1400 HVV1214-025 MHz, 200!s Pulse, 10% Duty The innovative Semiconductor Company! Pulsed Power Transistor 1200-1400 MHz, 200!s Pulse, 10% Duty L-Band Radar HVV1214-025 L-Band RadarMHz, 200µs Pulse, 10% Duty 1200-1400 Pulsed Power Transistor L-Band Radar Pulsed Power Transistor , L-Band Radar Pulsed Power Transistor PACKAGE PACKAGE 1200-1400 MHz, 200µs Pulse, 10% Duty DESCRIPTION


Original
PDF HVV1214-025 HVV1214-075 HVV1214-025 EG-01-PO05X5 429-HVVi EG-01-PO05X1 transistor s 1014 L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200
1998 - sot123 package

Abstract: SOT123 philips Trimmer 60 pf BLV12 philips 561
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV12 VHF power transistor Product specification September 1991 Philips Semiconductors Product specification VHF power transistor FEATURES · , Tmb = 25 °C in a common emitter test circuit. · Withstands full load mismatch. f (MHz) c.w , epitaxial transistor encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap. It is designed , specification VHF power transistor BLV12 LIMITING VALUES In accordance with the Absolute Maximum


Original
PDF BLV12 OT123 sot123 package SOT123 philips Trimmer 60 pf BLV12 philips 561
79LOO

Abstract: No abstract text available
Text: the decreased Vbe turns on the transistor Q 4 then the transistor Q 4 makes a bypass o f the base , transistor Q 5 turns on because the Vbe increases. Then the base current o f the transistor Q 6 and the , the output pass transistor operates within the safe operating area because the power consumption o f , increases, the voltage drop of the R i 6 increases, the transistor Qg and Q 7 turn on because the VBe o f , 3-TERMINAL VOLTAGE REGULATOR 1.Protection Circuit (1) Positive Voltage 3-Tenninal Regulator ( F


OCR Scan
PDF
transistor tip 35c

Abstract: photo transistor terminal transistor TIP 350 TIP 122 transistor APPLICATION circuit transistor TIP 662 transistor TIP 320 PCB PHOTO SENSOR TIP 29 transistor TIP 122 transistor AHF22
Text: : Tube 50 pcs. CONTACT TYPE BASIC CHARACTERISTICS Normally closed type (The photo transistor is ON when the sensor is being used.) For Ta = 25°C 77° F and applicable circuit conditions 1 , (VO) characteristics (The sphere must be stationary.) · VOL (photo transistor ON): Max. 1.0 V (horizontal) · VOH (photo transistor OFF): Min. 4.0 V (inclined at an angle of at least 60 degrees , ) Three times from height of 100 cm Leave for 500 hours at 85°C 185° F and 85% RH (No freezing at low


Original
PDF
1998 - high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Abstract: S11A1 Glossary of Microwave Transistor Terminology
Text: , f 5 > max > 1 foper For accurate analysis of transistor gain and stability, a complete set of , High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents Transistor Structure Types . A , is a short glossary and brief explanation of transistor terms commonly used in HewlettPackard transistor data sheets, advertisements and other technical communications. Some of these terms are simple


Original
PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology
2007 - InP transistor HEMT

Abstract: Class E amplifier GaN amplifier inp hemt power amplifier pHEMT transistor visitor Gan hemt transistor varian NONLINEAR MODEL LDMOS
Text: using the same transistor [4]. This paper demonstrates a successful Class F amplifier design using a , amplifier [8], several papers have stated its superiority to the Class F amplifier for a given transistor , 2130 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 42, NO. 10, OCTOBER 2007 A GaN HEMT Class F , , IEEE Abstract-A Class F amplifier has been designed, fabricated, and tested using a GaN HEMT transistor and hybrid printed circuit board (PCB) packaging. The amplifier has a peak power-added


Original
PDF
transistor K52

Abstract: germanium transistor pnp pnp germanium transistor GERMANIUM SMALL SIGNAL PNP TRANSISTORS mullard germanium mullard 160 germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS mazda 3 germanium Power Transistor
Text: VALVE & CRT DIVISION Issue I /4 SIEMENS EDISON SWAN LIMITED MAZDA XBI03 F . TRANSISTOR Germanium PNP , XCIOI AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type E D I S W A N MAZDA TENTATIVE GENERAL The XCIOI is a germanium pnp junction type transistor suitable for use in Audio Output stages. The element of the transistor is hermetically sealed in a small can. RATINGS—Absolute Values for 4S°C. Ambient , f Provided that the collector dissipation with sine wave input of 30% of full drive voltage does not


OCR Scan
PDF
rt 108 power transistor

Abstract: phonograph preamplifiers transistor j 108 transistor outline X packing transistor arrays 5v pa3046 low noise Darlington Transistor UA3026HM MA3036 jA3018
Text: €¢ |jA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS GENERAL DESCRIPTION — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed on a , maximum flexibility in circuit design for applications from dc to 120 MHz. Excellent transistor and diode , FAIRCHILD LIC TRANSISTOR AND DIODE ARRAYS • juA30XX SERIES MA3036 • MATCHED TRANSISTOR , Transistor ) Power Dissipation Any One Transistor Total For Array Temperature Range Operating Temperature


OCR Scan
PDF jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 rt 108 power transistor phonograph preamplifiers transistor j 108 transistor outline X packing transistor arrays 5v pa3046 low noise Darlington Transistor UA3026HM jA3018
2009 - BFP640

Abstract: gps schematic diagram transistor cross reference chart BFP640 noise figure schematic diagram DC amplifier Transistor Cross Reference low noise transistor table SiGe RF TRANSISTOR
Text: o . 1 2 1 L o w N o i s e A m p l i f i e r f o r G P S A p p l i c at i o n s u s i ng B FP 6 40 S i G e T ra n s i s t o r R F & P r o t e c ti o n D e v i c e s Edition 2007-08-14 , for GPS Applications using BFP640 SiGe Transistor 1 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Overview · · · · · · · BFP640 used for 1575 MHz Global , BFP640 transistor , is 12. Achieved 17 dB gain, 0.92 dB Noise Figure at 1575 MHz from 3.0 V supply


Original
PDF BFP640 gps schematic diagram transistor cross reference chart BFP640 noise figure schematic diagram DC amplifier Transistor Cross Reference low noise transistor table SiGe RF TRANSISTOR
2009 - RF remotecontrol schematic diagram

Abstract: TRANSISTOR 434 1 to 3 GHz bandpass filter wide band FSEM30 RF Transistor reference 2 to 3 GHz bandpass filter wide band bpf 434 mhz circuit diagram of rf 434 Miteq SMC-02 BFP460
Text: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 4 E S D - H a r d e n e d B F P 4 6 0 R F T r a n s i s t or i n a L o w C o s t 4 3 4 M H z L N A + B a n dp a s s F i lt e r A p p l i c a ti o n R F & P r o t e c ti o n D e v i c e s , Note No. 154 ESD-Hardened BFP460 RF Transistor in a Low Cost 434 MHz LNA + Bandpass 1 ESD-Hardened BFP460 RF Transistor in a Low Cost 434 MHz LNA + Bandpass Filter Application Applications LNA


Original
PDF BFP460 RF remotecontrol schematic diagram TRANSISTOR 434 1 to 3 GHz bandpass filter wide band FSEM30 RF Transistor reference 2 to 3 GHz bandpass filter wide band bpf 434 mhz circuit diagram of rf 434 Miteq SMC-02
Snubber circuit Design

Abstract: MG20G6EL1 MG15G6EL1 TOSHIBA MG15G4GM1 what is fast IGBT transistor MG400G1UL1 calculation of IGBT snubber IGBT snubber for inductive load MG50N2YS1 160U2G43 equivalent
Text: transistor , such a vicious cycle is caused as conductivity o f the device increases and current flowing , temperature o f a transistor requiring the guarantee o f long service life is determined corresponding to its , breakdown (S/B) phenomenon o f a transistor . Since the finding o f this phenomenon in 1958 by Mr. C.G , (_j-c): thermal resistance of transistor Rth (c - F y. contact thermal resistance b et ween transistor , types o f devices; bipolar Darlington transistor , MOS FET + bipolar transis tor and MOS FET are


OCR Scan
PDF 30U6P42 50U6P43 75U6P43 100U6P43 Snubber circuit Design MG20G6EL1 MG15G6EL1 TOSHIBA MG15G4GM1 what is fast IGBT transistor MG400G1UL1 calculation of IGBT snubber IGBT snubber for inductive load MG50N2YS1 160U2G43 equivalent
2004 - TIP 40c transistor

Abstract: transistor tip 35c transistor TIP 662 transistor TIP 350 TIP 122 transistor APPLICATION circuit photo transistor terminal transistor equivalent of tip 50 transistor tip 360 tip 145 transistor
Text: Normally closed type (The photo transistor is ON when the sensor is being used.) BASIC CHARACTERISTICS For Ta = 25°C 77° F and applicable circuit conditions 1) Operation characteristics (Operation speed 6 , VOL (photo transistor ON): Max. 1.0 V (horizontal) · VOH (photo transistor OFF): Min. 4.0 V (inclined , directions Min. 9.8 N (each direction) Three times from height of 100 cm Leave for 500 hours at 85°C 185° F and 85% RH (No freezing at low temperature) Leave for 500 hours at 85°C 185° F Leave for 500 hours at


Original
PDF
2010 - 5R380CE

Abstract: IPA50R380CE 5R38 IPI50R380CE IPP50R380CE ID032 5r380
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOSTM CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOSTM CE Power Transistor IPP50R380CE, IPA50R380CE IPI50R380CE 1 Description CoolMOSTM is a , 2 Rev. 2.0, 2010-08-27 500V CoolMOSTM CE Power Transistor IPx50R380CE Table of Contents , CoolMOSTM CE Power Transistor IPx50R380CE Maximum ratings 2 Maximum ratings at Tj = 25 °C, unless


Original
PDF IPx50R380CE IPP50R380CE, IPA50R380CE IPI50R380CE 5R380CE 5R38 IPI50R380CE IPP50R380CE ID032 5r380
2007 - cmos 4553

Abstract: ic 4553 pin of ic 4553 4559 transistor p13 4559Group w41 transistor P32 transistor transistor p31 4553
Text: System clock Selection bits MR0 f (XCIN) control bit RG1 f (XIN) control bit RG0 f (RING , 0 0 f (RING) 0 1 f (XIN) 1 0 f (XCIN) 1 1 Not used Clock control register RG RG2 At , /W 4553 group W At POFretained At RESET0002 0 f (XCIN) available, Port D6,D7 not selected 1 f (XCIN) stop, Port D6,D7 selected 0 f (XIN) available 1 f (XIN) stop 0 f (RING) available 1 f (RING) stop , PU03 Pull-up transistor control bit PU02 Pull-up transistor control bit PU01 Pull-up transistor


Original
PDF 4553H 4553group REC05B0046-0100/Rev cmos 4553 ic 4553 pin of ic 4553 4559 transistor p13 4559Group w41 transistor P32 transistor transistor p31 4553
Supplyframe Tracking Pixel