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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor E 13009 Datasheets Context Search

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transistor E 13009

Abstract:
Text: Rev. B FAIRCHILD S E M IC O N D U C T O R ^ 1 9 9 9 Fairchild S em iconductor Corporation KSE13008/ 13009 NPN SILICON TRANSISTOR BAS E EM ITTER S ATU R A TIO N V O LTA G E DC CURRENT GAIN , KSE13008/ 13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed , / 13009 NPN SILICON TRANSISTOR PU (W |. POWER DISSIPATION a so -no iso us ¿or , CHARACTERISTICS Characteristic (Tc =25°C) Symbol V ceo( sus) Iebo h FE VC E (sat) Test Conditions lc = 10mA


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PDF KSE13008/13009 KSE13008 KSE13009 transistor E 13009 all transistor 13009 transistor d 13009 transistor 13009 e 13009 f transistor EN 13009 13009 TRANSISTOR D 13009 13009 2 transistor E 13009 2
1999 - all transistor 13009

Abstract:
Text: KSE13008/ 13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13008 : KSE13009 Collector Emitter Voltage : KSE13008 : KSE13009 , , Duty cycle2% Rev. B ©1999 Fairchild Semiconductor Corporation µs µs µs KSE13008/ 13009 NPN SILICON TRANSISTOR KSE13008/ 13009 NPN SILICON TRANSISTOR TRADEMARKS The following are


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PDF KSE13008/13009 O-220 KSE13008 KSE13009 all transistor 13009 transistor 13009 13009 13009 TRANSISTOR equivalent 13009 TRANSISTOR transistor switch 13009 npn 13009 13009 NPN Transistor 13009 H 13009+TRANSISTOR
2001 - *E13009F

Abstract:
Text: KSE13008/ 13009 KSE13008/ 13009 High Voltage Switch Mode Application · High Speed Switching · , . A1, January 2001 KSE13008/ 13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/ 13009 Typical , Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/ 13009 Package Demensions TO , Rev. H2 Product Folder - Fairchild P/N KSE13009F - NPN Silicon Transistor Fairchild


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PDF KSE13008/13009 O-220 KSE13008 KSE13009 O-220F KSE13009FTU *E13009F tr 13009 all transistor 13009 transistor 13009 cross reference 13009 p 13009 13009 NPN Transistor 13009 kse13009 h2
2001 - transistor 13009

Abstract:
Text: KSE13008/ 13009 KSE13008/ 13009 High Voltage Switch Mode Application · High Speed Switching · , . A1, January 2001 KSE13008/ 13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/ 13009 Typical , Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/ 13009 Package Demensions TO , Home >> Find products >> KSE13008 NPN Silicon Transistor Contents Features | Applications | Product


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PDF KSE13008/13009 O-220 KSE13008 KSE13009 KSE13009H2 KSE13009H2TU transistor 13009 kse13009 h2 13009 NPN Transistor 13009 power transistor cross reference 13009 transistor switch 13009
2009 - transistor E 13009

Abstract:
Text: ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 3 1 2 Switch mode power supplies TO , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is , -220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q


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PDF ST13009 O-220 transistor E 13009 13009 H p 13009 13009 L transistor d 13009 e 13009 l all transistor 13009 ST13009 E 13009 13009L
2009 - transistor E 13009 l

Abstract:
Text: ST13009 High voltage fast-switching NPN power transistor Features I Low spread of dynamic parameters I High voltage capability I Minimum lot-to-lot spread for reliable operation I Very high switching speed Applications 1 I 2 3 Switch mode power supplies TO , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is , TO-220 mechanical data Dim A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q


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PDF ST13009 O-220 transistor E 13009 l
2007 - transistor E 13009

Abstract:
Text: ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 3 1 2 Switch mode power supplies TO , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is , data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L


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PDF ST13009 O-220 transistor E 13009 13009 H e 13009 f ST13009 ST-13009 13009 l E 13009 L 13009L transistor d 13009 p 13009
transistor d 13009

Abstract:
Text: (su s) M JE 1 3 00 8 M J E 13009 'C E V >E80 1 5 1 300 4 00 - Vdc m Adc mAdc *S/b - See , ?254 0GÛ54G5 7 | M JE 13008, M JE 13009 7 ~33 ~ / 3 -, -, F IG U R E 1 - F O R W A R D B IA S , temperature and second breakdown. Safe operating area curves indicate I q - V q e limits of the transistor , power transistor for S W IT C H M O D E applications are voltage and current ratings, switching speed , specifications which make this a " S W I T C H M O D E " transistor are the inductive switching speeds (tc and


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PDF ti3ti725M MJE13008 MJE13009 transistor d 13009 transistor E 13009 n752 E13009 E 13009 e 13009 p E 13009 TRANSISTOR motorola J 13009 - 2 D 13009 K transistor switch 13009
2005 - transistor MJ 13009

Abstract:
Text: . : 1/6 MICROELECTRONICS CORP. HMJE13009R 12 Ampere NPN Silicon Power Transistor Description , Page No. : 5/6 MICROELECTRONICS CORP. TO-247(TO-3P) Dimension G H A DIM A B C D E F G H I J K L M r1 Marking: Pb Free Mark Pb-Free: " . " (Note) Normal: None H MJ E 13009 D B r1 Date Code Control Code Note: Green label is used for pb-free packing 1 2 3 Pin Style: 1.Base 2.Collector 3.Emitter E M L C I Material: · Lead solder


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PDF HR200202 HMJE13009R HMJE13009R O-247 120ns Collector-Emitt120 183oC 217oC 260oC transistor MJ 13009 E13009 j 13009 to247 e 13009 d E 13009 D 13009 K mj 13009 13009 to-3p transistor E 13009 j 13009
2005 - E 13009

Abstract:
Text: Page No. : 5/6 MICROELECTRONICS CORP. TO-220AB Dimension DIM A B C D E F G H I J K L M N O P Marking: A F B Pb Free Mark Pb-Free: " . " (Note) Normal: None H E MJ E 13009 C D Date Code H M I K 3 G N 2 1 Tab O P , . : 1/6 MICROELECTRONICS CORP. HMJE13009 12 AMPERE NPN SILICON POWER TRANSISTOR Description , 3-Lead TO-220AB Plastic Package HSMC Package Code: E Important Notice: · All rights are


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PDF HE200206 HMJE13009 HMJE13009 O-220AB 120ns 183oC 217oC 260oC E 13009 transistor MJ 13009 e13009 transistor E 13009 mj 13009 D 13009 K transistor d 13009 tr 13009 J 13009 - 2 j 13009
ta 8268 ah

Abstract:
Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES · · · LOW NOISE: N F = 1.2 dB T Y P at f = 1 G H z, V c e = 3 V, Ic = 7 mA UPA821TF OUTLINE DIMENSIONS i«*- - , at f = 1 G H z, V c e = 3 V, Ic = 7 mA - * - 1 .2 5 ± 0 . 1 - * - SMALL PACKAGE STYLE: 2 N E 8 5 6 die in a 2 mm x 1.25 mm x 0 .6 mm package 0 .2 2 . 5 Ï "(ÀH Leads) DESCRIPTION T h e U , amplification in the V H F to U H F band. T h e two die are chosen from adjacent locations on the w afer. T h e


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PDF UPA821TF UPA821TF-T1 ta 8268 ah
NEC uPA 63 H

Abstract:
Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA821TF FEATURES · · · LOW NOISE: NF = 1.2 dB TYP at f = 1 GHz, V c e = 3 V, Ic = 7 mA OUTLINE DIMENSIONS (Units in mm) P ack age Outline T S 06 2.1 ± 0.1 - HIGH GAIN: |S 21 e |2 = 9.0 dB TYP at f = 1 GHz, V c e , CHARACTERISTICS (Ta = 25 c) P A R T NUM BER P A C K A G E OUTLINE SYM BO LS ICBO Ie b o hFE UPA 821 TF T S , 1.0 140 P A R A M E T E R S AND CONDITIONS Collector Cutoff Current at V c b = 1 0 V , I e = 0 Em


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PDF UPA821TF NE856 UPA821TF mirrored72 UPA821TF-T1 24-Hour NEC uPA 63 H NEC uPA 63 4017 ic operation CL 2183 ic E 13009 L NEC uPA 63 a transistor d 13009
2SC5743

Abstract:
Text: µPC2763TB 13.0@0.9 GHz 8.0@2.4 GHz High Frequency Wideband Amplifier TA = 25, VCC = 3.0 V, ZS = ZL , SAW Pamphlet P14469XJ4V0PF QAM DEMOD. &FEC General Purpose Discrete Transistor Silicon


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PDF PC8190/8191KRX-IF PC8194/8195KRX-IF PG2124TH 10TSSOP 10-pin FAX044435-9608 2SC5743 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC5937 2SC4091 2sc5747 2SC5599
ic pe 5571

Abstract:
Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA821TF OUTLINE DIMENSIONS (Units in mm) LOW NOISE: NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA · HIGH GAIN: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA · SMALL PACKAGE STYLE: 2 NE856 die in a 2 mm x 1.25 mm x 0.6 mm package Package Outline TS06 2.1 ± 0.1 1.25 ± 0.1 1 0.65 2.0 ± 0.2 , -161.35 -170.46 -178.60 167.50 150.72 141.52 130.09 114.27 102.28 MAG 6.73 6.15 5.66 5.08


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PDF UPA821TF NE856 UPA821TF UPA821TF-T1 24-Hour ic pe 5571 pe 5571 ic 7483 pin configuration 7402 ic configuration ic 3994 ic 4017 pin configuration IC 7449 on 5295 transistor UPA821TF-T1 FT 4013
2004 - 13009 TRANSISTOR equivalent

Abstract:
Text: Line Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35030R5 Designed for WLL , 138.36 136.24 134.10 132.02 130.09 127.98 125.90 123.85 121.74 119.56 117.39 115.36 113.49 111.97 111.53 , .030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H J K M N Q R S aaa bbb INCHES MIN MAX 0.948 , T A M B M F C E H A A (FLANGE) T SEATING PLANE R (LID) bbb M T , Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature


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PDF MRFG35030R5/D MRFG35030R5 MRFG35030R5 MRFG35030R5/D 13009 TRANSISTOR equivalent transistor d 13009
ic 5219 8mm

Abstract:
Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6 , gain Q1 : |S21e|z = 9.0 dB TYP. @f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2 : |S21 e |z = 8.5 dB TYP. @f = 2 , on-chip (2SC 4226,2SC 4959) o' o o - CM C\J 1= 1 GHz, V c e = 3 V , Ic = 7 mA ! = 2 GHz, V ce = , Current Gain vs. Collector Current ¿100 e 'm O ) 1 50 o o 20 10 0.5 1 5 10 50 , -161.35 -170.46 -178.60 174.04 167.50 161.38 156.04 150.72 146.09 141.52 137.65 133.69 130.09 126.52


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PDF
sem 5025

Abstract:
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA821TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 x 2SC4226) THIN-TYPE SMALL MINI MOLD The , ) 4. Base 6. Base (Q2) (Q1 ) 5. E m itter (Q2) Note 110 mW must not be exceeded for 1 element. Caution is required concerning excess input, such as from static electricity, due to th e high-precision fabrication processes used fo r this device. T h e in f o r m a tio n in I h is d o c u m e n t is s u b je


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PDF uPA821TF 2SC4226) //PA821TF /xPA821TF /XPA821TF-T1 sem 5025 NEC JAPAN 2415 on 5297 transistor transistor d 13009 9622 transistor LA 7687 a La 7833 la 7687 t 3866
2005 - MC13892

Abstract:
Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from , 132.02 2.10 0.90 67.33 1.54 -87.14 0.02 -127.45 0.68 130.09 2.15 0.89 , . M N (LID) bbb M T A M B M C E H A A (FLANGE) T SEATING PLANE DIM A B C D E F G H J K M N Q R S aaa bbb INCHES MIN MAX 0.948 0.958 0.680


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PDF MRFG35030R5 MC13892 MC13892 transistor d 13009 transistor z4 30 FET GAAS marking a H 9832 MRFG35030R5 MRFG35030 mc13892 schematic MARKING Z7 fet 6679
2005 - 13009 TRANSISTOR equivalent

Abstract:
Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from , -87.14 0.02 -127.45 0.68 130.09 2.15 0.89 61.07 1.62 -94.66 0.02 -135.04 , PACKAGE BODY. M N (LID) bbb M T A M B M C E H A A (FLANGE) T SEATING PLANE DIM A B C D E F G H J K M N Q R S aaa bbb INCHES MIN MAX 0.948 0.958


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PDF MRFG35030R5 13009 TRANSISTOR equivalent transistor d 13009 136.21 200B393KP50X CDR33BX104AKWS MRFG35030 MRFG35030R5 RO4350
1998 - p12724

Abstract:
Text: PRELIMINARY DATA SHEET Silicon Transistor µPA832TF NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE PACKAGE DRAWINGS (Unit:mm) The µPA832TF has two different built-in transistors (Q1 2.10±0.1 and Q2) for low noise amplification in the VHF band to UHF 1.25±0.1 4 3 · High gain Q1 : |S21e|2 = 9.0 dB TYP. @f = 1 GHz, VCE = , 137.65 133.69 130.09 126.52 123.26 120.27 117.15 114.27 111.71 109.21 106.70 104.47 102.28


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PDF PA832TF PA832TF 2SC4226 p12724 transistor 9527 ic 5219 8mm 2SC4226 2SC4959 IC 4822 ic 8720
2004 - 13009 TRANSISTOR equivalent

Abstract:
Text: Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies , 127.45 0.68 130.09 2.15 0.89 61.07 1.62 - 94.66 0.02 - 135.04 0.65 , (INSULATOR) M F C E H A A (FLANGE) T SEATING PLANE R (LID) bbb M DIM A B C D E F G H J K M N Q R S aaa bbb INCHES MIN MAX 0.948 0.958 0.680 0.690 , Action Employer. E Motorola Inc. 2004 HOW TO REACH US: JAPAN: Motorola Japan Ltd.; SPS, Technical


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PDF MRFG35030R5/D MRFG35030R5 13009 TRANSISTOR equivalent D 13009 K transistor M 9718 transistor E 13009 4221 motorola transistor transistor d 13009 MRFG35030 transistor E 13009 equivalent D55342M07B10J0R MRFG35030R5
1998 - D5611 A/B

Abstract:
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA821TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 u 2SC4226) THIN-TYPE SMALL MINI MOLD The PPA821TF has 2 built-in low-voltage transistors which are PACKAGE DRAWINGS (Unit: mm) designed for low-noise amplification in the VHF to UHF band. 2.10±0.1 FEATURES 1.25±0.1 · Low-noise Built-in 2 , .96 1.90 .65 133.69 1.45 38.35 .15 38.91 .32 ð80.43 2.00 .66 130.09


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PDF PPA821TF 2SC4226) PPA821TF PPA821TF-T1 D5611 A/B ic 4440 for audio amplification d5611 pe 5571 d5023 TRANSISTOR NEC D73 d5972 D4013 D1276
transistor sr 13009

Abstract:
Text: PRELIMINARY DATA SH EET Silicon Transistor NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT , Gain Bandwidth Product vs. Collector Current 10 V ce = 3 V f = 1 GHz ` N , -a 1 E to <3 , 141.52 137.65 133.69 130.09 126.52 123.26 120.27 117.15 114.27 111.71 109.21 106.70 104.47 102.28 MAG , orporation does not assum e any lia b ility for infringem ent o f patents, copyrights o r o th e r , liability arising from use of such de vice . No license, e ith e r express, im plied o r oth erw ise, is


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PDF uPA831TF 2SC4226, 2SC4227) 2SC4226 2SC4227 transistor sr 13009 sr 13009 transistor d 13009 1997N apa831 ic 5219 8mm on 5297 transistor transistors W 5753
2005 - 13009 TRANSISTOR equivalent

Abstract:
Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to , 149.03 147.80 146.32 144.63 142.65 140.48 138.36 136.24 134.10 132.02 130.09 127.98 125.90 123.85 121.74 , PACKAGE BODY. DIM A B C D E F G H J K M N Q R S aaa bbb INCHES MIN MAX 0.948 0.958 0.680 0.720 0.147 0.182 , 17.22 17.58 17.27 17.23 0.10 0.38 B M C E H A A (FLANGE) T SEATING PLANE STYLE 1


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PDF MRFG35030R5 13009 TRANSISTOR equivalent MRFG35030 transistor d 13009
2010 - transistor d 13009

Abstract:
Text: 0.137 0.137 0.140 0.160 0.168 S11 (Ang) -147.39 - 130.09 -118.57 -120.38 -124.74 -129.24 , single transistor or a low power operational amplifier, with a low value resistor in series with the


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PDF P1015-BD 22-Jan-10 MIL-STD-883 XP1015-BD-EV1 XP1015 transistor d 13009 DM6030HK XP1015-BD XP1015-BD-000V XP1015-BD-EV1
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