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Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
UJ3C065080T3S UJ3C065080T3S ECAD Model UnitedSiC Power Field-Effect Transistor
UF3C065080B7S UF3C065080B7S ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-7L
UF3C120150K4S UF3C120150K4S ECAD Model UnitedSiC 1200V-150mΩ SiC FET TO-247-4L
UF3SC120040B7S UF3SC120040B7S ECAD Model UnitedSiC 1200V-35mΩ SiC FET D2PAK-7L
UJ3C065080B3 UJ3C065080B3 ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-3L
UJ4C075023B7S UJ4C075023B7S ECAD Model UnitedSiC 750V-23mΩ SiC FET D2PAK-7L

transistor E 13005-2 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - TDA 16822

Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
Text: ICs: SMPS, CoolSET TM TM ­ D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com , Quasi-resonant switching 3 4 Contents SMPS ICs SMPS IC Overview 6 P W M C o n t ro l l e r 8 P F C a n d C o m b o C o n t ro l l e r 12 TM 14 S M P S To p o l o g i e s 16 CoolSET Di s c re t e s N - C h a n n e l M O S F E Ts , 4 0 0 t o 8 0 0 V ( C o o l M O S , St a n d


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PDF B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
2002 - Si3201

Abstract: Si321x AN47 ac proslic max 32Q1 0X0012 I321
Text: equation since they both represent the temperature of the transistor package. ( t ) = DC ( 1 ­ e , AN47 S i321 X L I N E F E E D P O W E R M O N I T O R I N G A N D P R O T E C T I O N , increases, so does the junction temperature of the transistor die. The maximum admissible junction temperature must not be exceeded because this could damage or destroy the transistor die. In the Si321x, the , corresponding indirect registers. If the power in any external transistor exceeds the programmed threshold


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1999 - TO-253-AA

Abstract: Small-outline integrated circuit SOT 143 transistor 143 46d1 308 transistor MDV 1-2 kv SOT-143 sot143 transistor transistor C 2240
Text: -Lead Small Outline Transistor [SOT-143] Rev. E | Page 8 of 12 Package Option RA-4 RA-4 RA-4 RA , . The ADM6315 is available in a cost- and space-efficient SOT-143 package. Rev. E Information , . E Changes to Absolute Maximum Ratings . 4 Updated Outline , 1999-Revision 0: Initial Version Rev. E | Page 2 of 12 ADM6315 SPECIFICATIONS VCC = full , Output Voltage Output Leakage Current 1 32 100 500 63 Rev. E | Page 3 of 12 ADM6315


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PDF OT-143 ADM6315 ADM811 OT-143 D00081-0-9/07 TO-253-AA Small-outline integrated circuit SOT 143 transistor 143 46d1 308 transistor MDV 1-2 kv SOT-143 sot143 transistor transistor C 2240
CIRCUIT DIAGRAM for LED TUBE LIGHT FOR HOME

Abstract: RP34-D100N RE-6152 N5 npn transistor RE-6041 D100P B-01 npn transistor t12 Diode Mark N7 RS34-L0300N-CY6P4UP
Text: output transistor B-5 P H O T O E L E C T R I C (+V) 1 S E N S O R S 4 (Sensing output) 3 , sensor which can sense reliably without being affected by the surroundings. B-1 P H O T O E L E C T R I C S E N S O R S US PHOTOELECTRIC SENSORS TYPE Narrow-view Retro reflective , open-collector transistor PNP open-collector transistor RS34-L0300P-CY6C4U2 NPN open-collector transistor RS34-L0500N-CY9C4U2 PNP open-collector transistor RS34-D0500P-CY9C4U2 NPN


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PDF SUS304) RP34-N0300N CIRCUIT DIAGRAM for LED TUBE LIGHT FOR HOME RP34-D100N RE-6152 N5 npn transistor RE-6041 D100P B-01 npn transistor t12 Diode Mark N7 RS34-L0300N-CY6P4UP
2009 - BFP640

Abstract: gps schematic diagram transistor cross reference chart BFP640 noise figure schematic diagram DC amplifier Transistor Cross Reference low noise transistor table SiGe RF TRANSISTOR
Text: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 2 1 L o w N o i s e A m p l i f i e r f o r G P S A p p l i c at i o n s u s i ng B FP 6 40 S i G e T ra n s i s t o r R F & P r o t e c ti o n D e v i c e s Edition 2007-08-14 , for GPS Applications using BFP640 SiGe Transistor 1 Low Noise Amplifier for GPS Applications using BFP640 SiGe Transistor Overview · · · · · · · BFP640 used for 1575 MHz Global


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PDF BFP640 gps schematic diagram transistor cross reference chart BFP640 noise figure schematic diagram DC amplifier Transistor Cross Reference low noise transistor table SiGe RF TRANSISTOR
2009 - ultra low noise RF Transistor

Abstract: BFR740F BFP740F sdars application note no. 122 sdars lna amplifier TRANSISTOR 12 GHZ Low Noise R.F 11 A 122 transistor infineon b 58 468
Text: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 2 2 I n f i n e on ' s B F P 7 4 0 F U l tr a L ow N o i s e R F T r a n s i s t o r i n 2 . 33 G H z S D A R S L o w N o i s e Amplifier Application R F & P r o t e c ti o n D e v i c e s , 's BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low 1 Infineon's BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low Noise Amplifier Application Applications · LNA stage for Satellite


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PDF BFP740F ultra low noise RF Transistor BFR740F sdars application note no. 122 sdars lna amplifier TRANSISTOR 12 GHZ Low Noise R.F 11 A 122 transistor infineon b 58 468
1999 - ac voltage regulator using SCR circuit diagram

Abstract: UC1834 338 u
Text: threshold, then the pass transistor is totally controlled by the CS/A. The combined CS/A and E /A gains and , linear regulators is a shorted pass transistor . All critical loads, therefore, require over-voltage , programmable linear regulator control IC which, with an external pass transistor , forms a complete linear , error amplifier monitors the output voltage and provides appropriate bias to the pass transistor (Q1) through a driver stage. This high-gain error amplifier ( E /A) allows good dynamic regulation while


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PDF UC1834 ac voltage regulator using SCR circuit diagram 338 u
2009 - Not Available

Abstract: No abstract text available
Text: saturation voltage Q1 NPN transistor )(s Figure 5. Pr e Base-emitter saturation voltage Q1 NPN transistor let o bs O ct u od r let o P e Figure 6. bs O Switching time , du o Figure 11. Base-emitter saturation voltage Q2 PNP transistor Pr e let o )(s bs O ct u od r P e Figure 12. Switching time resistive load Q2 PNP transistor let , STS05DTP03 Dual NPN-PNP complementary bipolar transistor Features ■High gain ■Low


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PDF STS05DTP03 STS05DTP03
Not Available

Abstract: No abstract text available
Text: T h e rm a l Stability a n d R adia tion I Transistor C irc u ii One o f the characteristics o f , b o and g m - A V b e to col lector current. (The g m o f the transistor is defined by g m - 3I c , dissipation (Pcmax) o f a transistor , if th e therm al stability of the bias circuit described in the previous , pera ture rises in a condition that certain voltage is applied to a transistor , the conductivity o f the elem ent is raised and current increases, and thereby the transistor consumes more power and


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1998 - Philips high frequency bipolar transistor with Ft

Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout
Text: , halfpage L b R TRANSISTOR DIE c b C e MGM008 e e MGM009 Fig.1-13 Equivalent , amplifier fundamentals e c Transmitting transistor design e L handbook, halfpage c elevated emitter bridge R C transistor die e MGM010 integrated emitter bridge MOS capacitor e b Fig.1-16 Large-signal equivalent circuit of the output of an RF power transistor . L , transistor and its value varies according to the application. e MGM661 Fig.1-15 Position of the MOS


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PDF MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout
yg6260

Abstract: 2-10a1a AC701 2-16B1a 2-10R1A
Text: transistor TO-220AB (2-10A1A) on a heat sink T r a n s is to r I n s u la tin g m ic a H e a t sink Fig , 4. T r a n s i s t o r U t i l i z a t i o n P r e c a u t i o n s When sem iconductors are being , perature, th e following pre cautions should be observed to maximize the effect o f the heat sink and minim ize transistor stress. (1) Silicone grease A thin, even layer o f silicone grease should be applied betw een the transistor and heat sink to improve therm al resistance. Non-volatile silicone grease is


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PDF 2-16E2A) yg6260 2-10a1a AC701 2-16B1a 2-10R1A
79LOO

Abstract: No abstract text available
Text: input-output differential voltage increases, the V b e of the transistor Q 5 increases and the base current of , the transistor Q 12 (output current) are limited. N w fa a m A a é b ( k ,M L 6-7 3 , b e of the transistor Q g increases and the base current of the transistor Q 9 and the collector , within the safe operating area because the power consumption of the transistor Q n is decreased. T h e , extreme high (T j= 150~ 200'C )· The transistor Q 4 is biased o ff normally at room temperature. W hen the


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1995 - lm314

Abstract: surface mount transistor A49 LM3146M lm3146n LM3146 10B4 diode KX 001 AN-450 C1995 DV10
Text: (15 seconds) Units Power Dissipation Each transistor TA e 25 C to 55 C 300 mW TA l 55 C Derate at 6 67 mW C Power Dissipation Total Package TA e 25 C 500 mW TA l 25 C Derate at 6 67 mW C , LM3146 High Voltage Transistor Array General Description Features The LM3146 consists of , current 2 mA max at IC e 1 mA Five general purpose monolithic transistors Operation from dc to 120 MHz , RRD-B30M115 Printed in U S A LM3146 High Voltage Transistor Array February 1995 Absolute Maximum


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PDF LM3146 14-lead lm314 surface mount transistor A49 LM3146M lm3146n 10B4 diode KX 001 AN-450 C1995 DV10
Not Available

Abstract: No abstract text available
Text: Philips Semiconductors Power Bipolar Transistors , Transistor Safe _Operating Area (SOAR) TRANSISTOR SAFE OPERATING AREA (SOAR) There are two main limiting factors which affect the power handling ability of a transistor ; the average junction temperature and the second , type and, for reliable operation of the transistor , the Ic/V ce limits shown by these curves must never , tio n Rth j-m b m oun tin g base mb ' mb Fig .6 Heat transport in a transistor with power


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2009 - RF remotecontrol schematic diagram

Abstract: TRANSISTOR 434 1 to 3 GHz bandpass filter wide band FSEM30 RF Transistor reference bpf 434 mhz 2 to 3 GHz bandpass filter wide band Miteq SMC-02 BFP460 circuit diagram of rf 434
Text: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 4 E S D - H a r d e n e d B F P 4 6 0 R F T r a n s i s t or i n a L o w C o s t 4 3 4 M H z L N A + B a n dp a s s F i lt e r A p p l i c a ti o n R F & P r o t e c ti o n D e v i c e s , Note No. 154 ESD-Hardened BFP460 RF Transistor in a Low Cost 434 MHz LNA + Bandpass 1 ESD-Hardened BFP460 RF Transistor in a Low Cost 434 MHz LNA + Bandpass Filter Application Applications LNA


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PDF BFP460 RF remotecontrol schematic diagram TRANSISTOR 434 1 to 3 GHz bandpass filter wide band FSEM30 RF Transistor reference bpf 434 mhz 2 to 3 GHz bandpass filter wide band Miteq SMC-02 circuit diagram of rf 434
2006 - Buck-Boost Converter advantages

Abstract: SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
Text: Selection Guide www.infineon.com/power May 2006 Introduction T O D A Y ' S M O D E R N L I F E S T Y L E leads to a fast-growing energy requirement as more and more people are able to afford , rise as a result of ever-increasing functions. E N E R G Y G E N E R A T I O N F R E Q U E N T L Y , H M O D E P O W E R S U P P L I E S (SMPS) represent today's most efficient energy conversion , the equipment's operational time. S O M E E L E C T R O N I C D E V I C E S operate only for a few


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PDF B152-H8202-G4-X-7600 Buck-Boost Converter advantages SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
1995 - 74als power consumption

Abstract: 74AS Characteristics Introduction about 74ls 74AS ALS TTL family characteristics 74LS ALS74 AN-476 C1995 DM54
Text: Corporation TL F 9158 device speed The Schottky transistor adds a Schottky clamp diode between the base and collector of the transistor The Schottky clamp diode has a lower forward voltage (about 0 4V) than the base-collector junction diode (about 0 5V) When the transistor is turned on the base current drives the transistor toward saturation and the collector voltage drops This causes the Schottky clamp diode to conduct and divert some of the base current from the base-collector junction of the transistor


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2000 - siliconix vmp4

Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
Text: that transistors must be used in pairs, versus the single Class-E transistor . Class E is preferable to , N. O. Sokal, " Transistor Power Losses in the Class E Tuned Power Amplifier," IEEE Journal of , and Cbc.) 15. S. R. Mazumder, A. Azizi, and F. E . Gardiol, "Improvement of a Class-C Transistor , IEEE International Microwave Symposium , June 1998, Baltimore; and "Class- E Switching-Mode , the transistor operates as an on/off switch and the load network shapes the voltage and current


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PDF 99CH36282C. KE67VWU, siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
"MARKING TE" US6

Abstract: 2301 mini transistor
Text: include V ( b r )C BO and V (B R )C E O that are associated w ith transistor inherent characteristics, and , Features (1) (2) (3) (4) (5) (6) The B R T is a value-added product comprising a transistor plus , ias Resistor Transistor . Package R eferene No. TO-92 (SC-43) M INI 1201 -1 2 9 9 2201 -2 2 9 , cansafely flow in a transistor , the voltage that can be applied to a transistor w ithout damaging it and the powerdissipated are a ll defined as maximum ratings. W hen designing your transistor circuits it is very im


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PDF TE12L. TE12H. "MARKING TE" US6 2301 mini transistor
ac voltage regulator using SCR circuit diagram

Abstract: crowbar SCR Phase Control IC dc voltage regulator circuit using SCR dc voltage regulator using scr UC1834 338 u regulator 337
Text: threshold, then the pass transistor is totally controlled by the CS/A. The combined CS/A and E /A gains and , linear regulators is a shorted pass transistor . All critical loads, therefore, require over-voltage , programmable linear regulator control IC which, with an external pass transistor , forms a complete linear , error amplifier monitors the output voltage and provides appropriate bias to the pass transistor (Q1) through a driver stage. This high-gain error amplifier ( E /A) allows good dynamic regulation while


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PDF UC1834 500kHz, ac voltage regulator using SCR circuit diagram crowbar SCR Phase Control IC dc voltage regulator circuit using SCR dc voltage regulator using scr 338 u regulator 337
2009 - ultra low noise transistor

Abstract: amplifier TRANSISTOR 12 GHZ transistor cross reference chart BFR740L3 transistor cross reference transistor amplifier 3 ghz C 114 transistor SiGe Infineon
Text: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 1 4 I n v e s t i ga t i o n o f B F R 7 4 0 L 3 U l tr a L ow N oi s e S i G e :C T r a n s i s t o r a s 1. 7 - 2 . 3 G H z " i B U R S T " L ow Noise Amplifier R F & P r o t e c ti o n D e v i c e s Edition 2007-08-22 Published by Infineon Technologies AG 81726 München, Germany , Transistor as 1.7 - 2.3 GHz 1 Investigation of BFR740L3 Ultra Low Noise SiGe:C Transistor as 1.7 - 2.3


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PDF BFR740L3 ultra low noise transistor amplifier TRANSISTOR 12 GHZ transistor cross reference chart transistor cross reference transistor amplifier 3 ghz C 114 transistor SiGe Infineon
2002 - 433MHZ amplifier 1w

Abstract: rfc 433mhz circuit IS-54 RF transistors with s-parameters
Text: MAX2601 1, 8 2, 3, 6, 7, Slug MAX2602 1, 8 2, 6, 7, Slug C E Transistor Collector Transistor Emitter Anode , 19-1185; Rev 2; 5/97 KIT ATION EVALU E L B AVAILA 3.6V, 1W RF Power Transistors for 900MHz , transistor . The MAX2602 includes a highperformance silicon bipolar RF power transistor , and a biasing diode that matches the thermal and process characteristics of the power transistor . This diode is used to create a bias network that accurately controls the power transistor 's collector current as the


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PDF 900MHz 900MHz MAX2602) MAX2601/MAX2602 MAX2601/MAX2602 101mm 004in. 1-0041A 433MHZ amplifier 1w rfc 433mhz circuit IS-54 RF transistors with s-parameters
transistor AL P11

Abstract: FR20 transistor FR03 FR10 FR13 FR20 FR21 PU22 PU23 pu10
Text: , whereas the pull-up transistor function can be switched On/Off also by setting register PU0. Further , pull-up transistor control bit 0 Pull-up transistor Off Port P01 pull-up transistor control bit 0 Pull-up transistor Off Port P00 pull-up transistor control bit R/W TAPU0/TPU0A 0 Pull-up transistor Off Port P02 pull-up transistor control bit at RAM back-up: state retained 0 Pull-up transistor Off Note 1: 1 Pull-up transistor On 1 Pull-up transistor On 1 Pull-up


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PDF REJ05B0900-0100/Rev transistor AL P11 FR20 transistor FR03 FR10 FR13 FR20 FR21 PU22 PU23 pu10
1995 - smd schottky diode 82x

Abstract: In5819 smd LM1578 SMD IN5819 transistor flasher circuit 5A current smd diode 82x 1N5818 smd 1n5819 smd bf TRANSISTOR smd PE-64287
Text: transistor V is the current limit sense voltage Bf is the forced current gain of transistor Q1 (Bf e 30 , transistor is off Thus Vo e Vin a Vin(ton toff) D1 is a Schottky type diode such as a IN5818 or IN5819 , LM1578A output transistor Vsat1 is the saturation voltage of transistor Q1 R3 e (lVol a 1V) 54 2 mA e , LM1578 offering higher maximum ratings for the total supply voltage and output transistor emitter and , CT e 3900 pF and 25% s duty cycle s 75% unless otherwise specified Values in standard typeface are


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PDF LM1578A LM2578A LM3578A LM1578A smd schottky diode 82x In5819 smd LM1578 SMD IN5819 transistor flasher circuit 5A current smd diode 82x 1N5818 smd 1n5819 smd bf TRANSISTOR smd PE-64287
transistor K52

Abstract: germanium transistor pnp GERMANIUM SMALL SIGNAL PNP TRANSISTORS mullard germanium pnp germanium transistor mullard 160 germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS power ac audio transistor small signal transistor
Text: XCIOI AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type E D I S W A N MAZDA TENTATIVE GENERAL The XCIOI is a germanium pnp junction type transistor suitable for use in Audio Output stages. The element of the transistor is hermetically sealed in a small can. RATINGS—Absolute Values for 4S°C. Ambient , EDISON SWAN LIMITED E D I S W A N MAZDA XCIOI AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type , exceed 100 mW per transistor , it is permissible for the collector dissipation to reach 120 mW at the peak


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