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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor DA 2688 Datasheets Context Search

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DA 2688

Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Text: SILICON POWER TRANSISTOR T - 3 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T , temperature at the rate of 28m W /°C. This rating is based on the capability of the transistor to operate , V. Energy = , T exas ^ In s t r u m e n t s ' 5-263 POST OFFICE BOX 225012 · DA LLAS , STR (OPTO) 62C 37005 TIP3055 N-P-N SILICON POWER TRANSISTOR T-33-/3 electrical , ; exact values vary slightly with transistor parameters. 5-264 , Tex a s In s t r u m e n t s POST


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PDF TIP3055 TIP2955 T0-218AA 7S265 DA 2688 transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
DA 2688

Abstract: transistor DA 2688 transistors TIP32 TIP32 PNP Transistor TIP32B texas
Text: /°C. This rating Is based on the capability of the transistor to operate safely in the circuit of Figure 2. ® CL H , Te x a s ^ In s t r u m e n t s POST O FFICE BOX 226012 · DA LLAS. TE X A S , temperature at the rate of 16 mW/°C. 4 . This rating is based on the capability of the transistor to operate , . 5-28 , Te x a s * In s t r u m e n t s POST O FFICE BOX 225012 · DA LLAS. TEXA S 75265 T E X A , Tex a s ^ In s t r u m e n t s POST O FFICE BOX 226012 · DA LLAS. TE X A S 7S265 5-29 T IP


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PDF TIP32, TIP32A, TIP32B, TIP32C, TIP32D, TIP32E, TIP32F TIP31 O-220AB 0Thl72b DA 2688 transistor DA 2688 transistors TIP32 TIP32 PNP Transistor TIP32B texas
DA 2688

Abstract: tip35c equivalent transistor DA 2688 C2688
Text: temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate , OFFICE BOX 225012 · DA LLAS. TEXA S 75265 . Te x a s ^ 5.51 TEXAS INSTR {OPTO> bâ , This rating is based on the capability of the transistor to operate safely in the circuit in Figure 2 , vary slightly with transistor parameters. Tex a s ^ In s t r u m e n t s 1283 POST O FFICE BOX 225012 · DA LLAS. TEXA S 75265 5.53 TIP Devices fiS TE X A S IN S T R -COPTO} ta b5


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PDF 0PT03- TIP35JIP35A TIP35C, TIP35D, TIP35E, TIP35F TIP36 T0-218AA TIP35, TIP35A, DA 2688 tip35c equivalent transistor DA 2688 C2688
C2688 li

Abstract: Texas Instruments TIP36C TIP36C EQUIVALENT TIP36 texas instruments tip36 transistor DA 2688 TIP36B TIP36E TIP36D TIP36A
Text: . This rating is based on the capability of the transistor to operate safely in the circuit in Figure 2. Texas ^ instruments POST OFFICE BOX 225012 • DALLAS. TEXAS 75265 5-59 TEXAS INSTR -COPTO} Ë2 , the rate of 28 mW/°C. 4. This rating is based on the capability of the transistor to operate safely , nominal; exact values vary slightly with transistor parameters. Texas ^ m1 Instruments POST OFFICE BOX , , Chicago Standard Transformer Corporation C- 2688 , or equivalent. B. Input puise duration is increased until


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PDF 003bflGD TIP35 TIP36, TIP36A, TIP36B, TIP36C, TIP36D, TIP36E, TIP36F T-33-/3 C2688 li Texas Instruments TIP36C TIP36C EQUIVALENT TIP36 texas instruments tip36 transistor DA 2688 TIP36B TIP36E TIP36D TIP36A
TIP42C EQUIVALENT

Abstract: c2688 TIP42C texas instruments TIP42 Texas Instruments TIP42C texas TIP42A equivalent TIP42A TEXAS TIP42D C-2688 tlp42c
Text: transistor to operate safely in the circuit in Figure 2. TIP42 TIP42A TIP42B TIP42C Collector-base voltage , /°C. 4. This rating is based on the capability of the transistor to operate safely in the circuit in , ^^ 5.~76 Instruments POST OFFICE BOX 225012 • DALLAS. TEXAS 75265 TEXAS INSTR -COPTO} wà , vary slightly with transistor parameters. (0 a) o > 0) Q Q. H , Texas ^ 5.77 Instruments POST , Transformer Corporation C- 2688 , or equivalent. B. Input pulse duration is increased until ICM = — 2.5 A. IC


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PDF 36T72^ TIP42, TIP42A, TIP42B, TIP42C, TIP42D, TIP42E, TIP42F TIP41 T0220AB TIP42C EQUIVALENT c2688 TIP42C texas instruments TIP42 Texas Instruments TIP42C texas TIP42A equivalent TIP42A TEXAS TIP42D C-2688 tlp42c
C2688

Abstract: c2688 transistor tRANSISTOR c2688 TIP308 TIP30A tip30c TEXAS INSTRUMENTS TIP29 TIP30D TIP30E TIP30F
Text: rate of 16mW/°C. 4. This rating is based on the capability of the transistor to operate safely in the , at therateof 16mW/°C. 4. This rating Is based on the capability of the transistor to operate safely , Instruments Â¥ 1 post office box 225012 • dallas. texas 75265 -jzTK^rTUTT^rropToy ts ‹~| tS , values vary slightly with transistor parameters. (A 0) O > 0) Q Q. I- Texas Instruments post office , , 0.11 O, Chicago Standard Transformer Corporation C- 2688 , or equivalent. B, Input pulse duration is


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PDF 003b7SE TIP30, TIP30A, TIP30B, TIP30C, TIP30D, TIP30E, TIP30F TIP29 T0-220AB C2688 c2688 transistor tRANSISTOR c2688 TIP308 TIP30A tip30c TEXAS INSTRUMENTS TIP29 TIP30D TIP30E
tip 31

Abstract: c2688 L transistor DA 2688 DA 2688 tip 120 TRANSISTOR equivalent
Text: /°C. This rating is based on the capability of the transistor to operate safely In the circuit in , This rating is based on the capability of the transistor to operate safely in the circuit in Figure 2 , shown are nominal; exact values vary slightly with transistor parameters'. In s t r u m e n t s POST , CURRENT WAVEFORMS NOTES: A . L1 and L2 aie 10 mH, 0.11 O, Chicago Standard Transformer Corporation C- 2688 , a clamped inductive load. 1k 5-24 In Texa s stru m en ts POST O FFICE BOX 225012 · DA


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PDF TIP31 T1P31D, TIP31F T0-22DAB tip 31 c2688 L transistor DA 2688 DA 2688 tip 120 TRANSISTOR equivalent
transistor tip 31c

Abstract: TIP 29 transistor TIP 31 Transistor tip 31 Texas Instruments TIP31C tip318 TIP 31 EQUIVALENT transistor DA 2688 TIP32 TIP31C
Text: /° C. 5. This rating is based on the capability of the transistor to operate safely in the circuit , values vary slightly with transistor parameters. 2-178 Texas Instruments TYPES Tim TIP31A, TIP31B , Transformer Corporation C- 2688 , or equivalent. B. Input pulse width is increased until I^m = 1,8 A. Texas , —^v Ì, tw = 1 ms, d = 0.1 = 10%-tm- 10 ms, « 0.1 = 10


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PDF TIP31. TIP31A. TIP31B. TIP31C TIP32, TIP32A, TIP32B, TIP32C TIP31 TIP31A transistor tip 31c TIP 29 transistor TIP 31 Transistor tip 31 Texas Instruments TIP31C tip318 TIP 31 EQUIVALENT transistor DA 2688 TIP32
TIP74C

Abstract: transistor DA 2688 TIP73 TIP73C TIP73A
Text: rating is based on the capability of the transistor to operate safely in the circuit of Figure 2. L = 2 0 , slightly with transistor parameters. IC = - 5 A , v BE(off) = 4 .2 V , T EST CONDITIONS^ lB1 = - 0 . 5 A , Transformer Corporation C- 2688 , or equivalent, B. Input pulse duration is increased until Ic m = - 3 A . , · DA LLAS, TEXA S 7S265 T E X A S I N S T R -COPTO} b2 dF | ÖTblTSfc. DOBbflSt. S 8 , 225012 · DA LLAS. TE X A S 75265 5-115 TE XA S IN ST R -COPTO} Ta de T | 0^172^ GOBbas


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PDF hfl52 TIP74, TIP74A, TIP74B, TIP74C TIP73, TIP73A, TIP73B, TIP73C 2N6489 transistor DA 2688 TIP73 TIP73A
2689* transistor

Abstract: MRF1035
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor Designed for 10 25-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. · Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak Gain = 9.0 dB Min 100% Tested , Transistor or a Pair of MRF10350 Transistors 70 W (PEAK) 1025-1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON , infrared measurement techniques. (Worst case 0 jc value measured @ 10 ps, 10%.) MRF10070 2-688


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PDF MRF10500 MRF10350 376C00 MRF10070 2689* transistor MRF1035
C2688

Abstract: c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688 TIP2955
Text: P-N-P SILICON POWER TRANSISTOR a/ january 1972 - revised october 1984 • Designed for Complementary , capability of the transistor to operate safely in the circuit of Figure 2. L = 20 mH, RBB2 = 100 S, VBB2 = 0 , > 62c 36999 d 7-32-2V TIP2955 P-N-P SILICON POWER TRANSISTOR electrical characteristics at 25 , values vary slightly with transistor parameters. 5-258 Texas Instruments post office box 225012 â , 37000 TIP2955 P-N-P SILICON POWER TRANSISTOR PARAMETER MEASUREMENT INFORMATION -w- 1N914 INPUT


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PDF TIP2955 TIP3055 t0-218aa 22eoi2 D0370D3 TIP2955 C2688 c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688
equivalent transistor TIP3055

Abstract: 2N3055 transistor equivalent C2688 TIP3055 NPN power transistor TIP3055 equivalent transistor 2n3055 tip3055 equivalent C-2688 c2688 transistor 2N3055 equivalent transistor
Text: TRANSISTOR DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 90 W at 25° C , on the capability of the transistor to operate safely in the circuit of Figure 2. L * VbB2 = OV.Rg = , ÎNSTR (OPTO) 62C 37005 TIP3055 N-P-N SILICON POWER TRANSISTOR T-33-/3 electrical characteristics , slightly with transistor parameters. 5-264 Texas Instruments POST OFFICE BOX 225012 • DALLAS. TEXAS , N-P-N SILICON POWER TRANSISTOR -33-/3 77 PARAMETER MEASUREMENT INFORMATION 44- OUTPUT MONITOR


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PDF TIP3055 TIP2955 2N3055 T0-218AA 7S265 Ttil72ti 37D0C1 equivalent transistor TIP3055 2N3055 transistor equivalent C2688 TIP3055 NPN power transistor TIP3055 equivalent transistor 2n3055 tip3055 equivalent C-2688 c2688 transistor 2N3055 equivalent transistor
TIP36C EQUIVALENT

Abstract: transistor tip 36c C 2688 transistor 36c tip 36c transistor tip 35c tip 36c transistor 5100 npn tip TIP35C EQUIVALENT
Text: tor future use and best overall value. Motorola Bipolar Power Transistor Device Data 3-879 , Test Circuits Figure 3. Turn-On Time 3-880 Motorola Bipolar Power Transistor Device Data , transistor : average junction temperature and second break down. Safe operating area curves Indicate lc - V c e limits of the transistor that must be observed for reliable operation; i.e., the transistor must , Motorola Bipolar Power Transistor Device Data 3-881 TIP35A TIP35B TIP33C TIP36A TIP36B TIP36C TEST


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PDF TIP35A TIP35B TIP33C TIP36A TIP36B TIP36C TIP36C EQUIVALENT transistor tip 36c C 2688 transistor 36c tip 36c transistor tip 35c tip 36c transistor 5100 npn tip TIP35C EQUIVALENT
transistor BF 164

Abstract: buv 47 i L61A
Text: BUV 47 · BUV 4/A T-33-13 - 2688 c- 09 167 TELEFUNKEN ELECTRONIC 17E J > ÔTSOQTb , transistor on tape1 1 Additional marking for specials5 1 *i 06 * View on flat side of transistor , view on gummed tape 05 = View on round side of transistor , view on gummed tape s) Additional marking " 0 , orientation of transistor not necessary, because box can be opened on top or botton. Example for order No , standard taping, the transistor orienta tion on the tape is shown in Fig. 7.4 and Fig. 7.5. DU 06 !Z Fig


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PDF 15A3DIN transistor BF 164 buv 47 i L61A
2004 - bd249c equivalent

Abstract: c2688 c2688 transistor tRANSISTOR c2688 BD249C
Text: BD249C NPN High-Power Transistor . . . for general-purpose power amplifier and switching , TRANSISTOR TO-218 CASE 340D STYLE 1 2 3 MARKING DIAGRAM Maximum ratings are those values beyond , are two limitations on the power handling ability of a transistor : average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the


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PDF BD249C O-218 BD249C MJE180 C-2688, bd249c equivalent c2688 c2688 transistor tRANSISTOR c2688
2005 - bd249c equivalent

Abstract: C2688 free transistor and ic equivalent data BD249C MJE180 20 L2
Text: BD249C NPN High-Power Transistor NPN high-power transistors are for general-purpose power , ://onsemi.com 25 AMP, 100 VOLT, 125 WATT NPN SILICON POWER TRANSISTOR MAXIMUM RATINGS Rating Symbol , a transistor : average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is


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PDF BD249C BD249C/D bd249c equivalent C2688 free transistor and ic equivalent data BD249C MJE180 20 L2
2004 - bd249c equivalent

Abstract: No abstract text available
Text: BD249C NPN High-Power Transistor . . . for general-purpose power amplifier and switching , TRANSISTOR TO-218 CASE 340D STYLE 1 2 3 MARKING DIAGRAM Maximum ratings are those values beyond , LIMIT BONDING WIRE LIMIT There are two limitations on the power handling ability of a transistor , the transistor that must be observed for reliable operation; i.e., the transistor must not be , Transformer Corporation C- 2688 , or equivalent. B. Input pulse width is increased until I CM = - 3.0 A. C. For


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PDF BD249C O-218 BD249C/D bd249c equivalent
2006 - transistor pnp a110

Abstract: free transistor and ic equivalent data transistor pnp a110 EQUIVALENT
Text: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power , ://onsemi.com 25 AMP, 100 VOLT, 125 WATT NPN SILICON POWER TRANSISTOR MAXIMUM RATINGS Symbol Value , ) There are two limitations on the power handling ability of a transistor : average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater


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PDF BD249C BD249C/D transistor pnp a110 free transistor and ic equivalent data transistor pnp a110 EQUIVALENT
TIP 2n3055

Abstract: transistor tip 5530 tip 147 TRANSISTOR equivalent TIP 41 transistor TIP 122 transistor transistor tip 3055 TIP 122 transistor APPLICATION NOTES transistor TIP 42 tip 127 TRANSISTOR equivalent TRANSISTOR tip 127
Text: TYPE TIP30S5 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR FOR POWER AMPLIFIER AND , rate of 28 mW/°C. 4. This retino is based on the capability of the transistor to operate safely in , |_/2. Texas Instruments 2-281 TYPE TIP3055 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR , current values shown are nominal; exact values vary slightly with transistor parameters. 2-280 Texas Instruments TYPE TIP30S5 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR PARAMETER MEASUREMENT


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PDF TIP30S5 2N3055 TIP 2n3055 transistor tip 5530 tip 147 TRANSISTOR equivalent TIP 41 transistor TIP 122 transistor transistor tip 3055 TIP 122 transistor APPLICATION NOTES transistor TIP 42 tip 127 TRANSISTOR equivalent TRANSISTOR tip 127
2006 - BD249C equivalent

Abstract: 400 watts amplifier circuit diagram 10 amp npn power transistors NPN 1.5 AMPS POWER TRANSISTOR AMP contact assembly TO-218 1000 watt amplifier pulse transformer 218 C 2688 free transistor and ic equivalent data
Text: BD249C NPN High-Power Transistor NPN high-power transistors are for general-purpose power , ://onsemi.com 25 AMP, 100 VOLT, 125 WATT NPN SILICON POWER TRANSISTOR MAXIMUM RATINGS Rating Symbol , power handling ability of a transistor : average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The


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PDF BD249C BD249C/D BD249C equivalent 400 watts amplifier circuit diagram 10 amp npn power transistors NPN 1.5 AMPS POWER TRANSISTOR AMP contact assembly TO-218 1000 watt amplifier pulse transformer 218 C 2688 free transistor and ic equivalent data
2005 - Not Available

Abstract: No abstract text available
Text: 1.8 1.872 S5225M 2.4 2.5 2.6 S5228M 2.688 2.8 2.912 S5230M 2.88 3 , pass transistor base current. The total current drawn from the supply is the sum of the load current


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PDF S52xxM S52xxM 150mA OT-25 150mA
2007 - Not Available

Abstract: No abstract text available
Text: 2.688 2.8 2.912 V S5230M - 2.880 3.0 3.120 V S5233M - 3.168 3.3 , : Quiescent current is the regulator standby current plus pass transistor base current. The total current


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PDF S52xxM S52xxM 150mA OT-25 150mA KSD-I5O005-000
2005 - Not Available

Abstract: No abstract text available
Text: +1V), IO=100 ㎂ 2.400 2.5 2.600 S5228M VI=(VO+1V), IO=100 ㎂ 2.688 2.8 2.912 , Žƒ to 150 ㎃. Note 4 : Quiescent current is the regulator standby current plus pass transistor base


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PDF S52xxM S52xxM 150mA OT-25 KSI-2064-000
2010 - S5225

Abstract: S5215M S5218M S5225M S5228M S5230M S5233M S5250M
Text: 2.600 V S5228M - 2.688 2.8 2.912 V S5230M - 2.880 3.0 3.120 V , regulator standby current plus pass transistor base current. The total current drawn from the supply is the


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PDF S52xxM S52xxM 150mA OT-25 150mA KSD-I5O005-003 S5225 S5215M S5218M S5225M S5228M S5230M S5233M S5250M
2006 - Not Available

Abstract: No abstract text available
Text: 1.560 S5218M 1.728 1.800 1.872 S5225M 2.400 2.500 2.600 S5228M 2.688 , is the regulator standby current plus pass transistor base current. The total current drawn from the


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PDF S52xxM S52xxM 150mA OT-25 150mA
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