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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor D13003 X Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2014 - LED lighting

Abstract: transistor D13003 X D13003X 12v transformer winding formula 12V 1A Transformer specification 23/10V 3W LED DRIVER
Text: Resistor,1W,10ohm,KNP,5% TY-OHM Q1 Transistor ,HFE 15-25,NPN, D13003 ,TO-92 Huawai R1 Chip , Transistor ,HFE 15-25,NPN, D13003 ,TO-92 Huawai R1 Chip Resistor,300K ohm,0805,5% TY-OHM R2 , IC, ACT364US-T, SOT23-6 74 TY-OHM R8 Efficiency (%) Transistor ,HFE15-25,NPN, D13003 ,TO , FR1 Wire Round Resistor,1W,10ohm,KNP,5% Transistor ,HFE15-25,NPN, D13003 ,TO-92 Typical , , ¢5x7mm,Dip L2 I-shaped Inductor,680µH,0410,Dip Q1 Transistor , HFE 20-25 NPN, D13003


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PDF ACT364 350mA 700mA ACT364e 01uF/50V 100pF/25V LED lighting transistor D13003 X D13003X 12v transformer winding formula 12V 1A Transformer specification 23/10V 3W LED DRIVER
2012 - ic 6 pin smd for power supply led

Abstract: transistor D13003 X D13003
Text: Round Resistor,1W,10ohm,KNP,5% Transistor ,HFE 15-25,NPN, D13003 ,TO-92 Huawai R1 Chip Resistor , Wire Round Resistor,1W,10ohm,KNP,5% TY-OHM Q1 Transistor ,HFE 15-25,NPN, D13003 ,TO-92 Huawai , Round Resistor,1W,10ohm,KNP,5% TY-OHM Q1 Transistor ,HFE 15-25,NPN, D13003 ,TO-92 Huawai R1 , Efficiency (%) Transistor ,HFE15-25,NPN, D13003 ,TO-92 Efficiency vs. Input Voltage ACT364-001 Q1 , FR1 Wire Round Resistor,1W,10ohm,KNP,5% Transistor ,HFE15-25,NPN, D13003 ,TO-92 Typical


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PDF ACT364 ACT801 120VAC) 350mA 700mA G/16V, ic 6 pin smd for power supply led transistor D13003 X D13003
2012 - 230V ac to 5V dc usb charger circuit

Abstract: D13005 TRANSISTOR SMD p1 DIODE SMD d8 EE20 core Flyback transformer
Text: L1 Axial Inductor, 1.5mH, 0410, DIP Q1 Transistor , NPN, 700V,1.5A, D13003 , TO-251AB PCB1 , =45.8x33.3x1.6mm,Cem-1,Rev:A Jintong Q1 Transistor , NPN, 700V,1.5A, D13003 , TO-220 Huawei Typical , PCB, L*W*T=41.3x28.1x1.6mm,Cem-1,Rev:A Jintong Q1 Transistor , NPN, 700V,1.5A, D13003 , TO , =41.3x28.1x1.6mm,Cem-1,Rev:A Jintong Q1 Transistor , NPN, 700V,1.5A, D13003 , TO-251AB Huawei FR1 , drive for the NPN transistor . Pin 1 is the switching pin. Pin 5 is the feedback pin that senses the


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PDF ACT36X, ACT33X 2012-Octâ ACT365-02 EPC17) 85-264Vac 2200mA 230V ac to 5V dc usb charger circuit D13005 TRANSISTOR SMD p1 DIODE SMD d8 EE20 core Flyback transformer
2012 - transistor D13003

Abstract: D13003 transistor SMD 352 A5
Text: Amode Tech 11 Q1 Transistor , NPN, 700V,1.5A, D13003 , TO-126 1 Huawei 12 FR1 , . Innovative PowerTM DESCRIPTION Switch Drive. Switch node for the external NPN transistor . Connect this , . Ground. Base Drive. Base driver for the external NPN transistor . Power Supply. This pin provides bias , internal compensation network, modulates the external NPN transistor peak current at CS pin with current , emitter of an external high voltage NPN transistor . This baseemitter-drive method makes the drive circuit


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PDF ACT364 14-Nov-12 ACT364 85kHZ transistor D13003 D13003 transistor SMD 352 A5
2012 - d13003

Abstract: transistor D13003 TYOHM
Text: Transistor , NPN, 700V,1.5A, D13003 ,TO-220 Fuse:1A 250V 3.6*10mm With Pigtail, ceramic tube Chip Resistor , Switch Drive. Switch node for the external NPN transistor . Connect this pin to the external power NPNâ , for the external NPN transistor . Power Supply. This pin provides bias power for the IC during startup , internal compensation network, modulates the external NPN transistor peak current at CS pin with current , voltage NPN transistor . This baseemitter-drive method makes the drive circuit the most efficient


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PDF ACT366 14-Nov-12 ACT366 150mW d13003 transistor D13003 TYOHM
2012 - J3305-2 y transistor

Abstract: No abstract text available
Text: considering the three leads to the transistor as X , Y and Z. Connect the POS test wire to the X lead, and , www.elmelectronics.com 2 of 4 Application Note AN01 - Transistor Testing Leave X connected to POS for both tests Transistor Test Sheet part no.: X to POS Jumper from NEG Y to the Y lead, and leave Z open NEG , AN01 - Transistor Testing Transistor Test Sheet part no.: X to POS Y Z NEG - - , Application Note AN01 - Transistor Testing Over the past decade, Elm Electronics has helped many


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YG6260

Abstract: YG-6260 toshiba TO-3P AC701
Text: terminal AC501 Spring lock washer M3X2PCS AC401 Nut ' M3 x 0.5 x 2PCS " - 0+0 AC701A <#>4.2 Transistor , transistor to overvoltage b reak ¿ X down, when applying it to the transistor through its electrode. Although , Transistor U tilization Precautions When semiconductors are being used, caution must be exercised , heat sink and minimize transistor stress. (1) Silicone grease A thin, even layer of silicone grease should be applied between the transistor and heat sink to improve thermal resistance. Non-volatile


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2002 - TRANSISTOR SMD CODE PACKAGE SOT23

Abstract: TRANSISTOR BC337 SMD laptop inverter SCHEMATIC TRANSISTOR K 2915 MOSFET schematic diagram of laptop inverter laptop CCFL inverter SCHEMATIC power transistors table smd transistor BC547 datasheet catalog mosfet Transistor smd NPN Transistor smd code LY 83
Text: .9 2.3 Tips for BISS transistor selection , SOT490 (SC-89) measures only 1.6 x 0.8 x 0.7 mm³ compared to the still very popular SOT23 (2.9 x 1.3 x , impact shows that a transistor used in a TV-set needs more than 100 times more energy during operational , BISS transistor PBSS4350T in SOT23, · the 0.5 A BISS transistor PBSS2540F in SOT490 (SC-89), · the 3 A BISS transistor PBSS4350Z in the SOT223 (SC-73), · the 5 A BISS transistor PBSS4540Z in SOT223


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PDF AN10116-02 01/W97 OT457 SC-74) OT416 SC-75) OT490 SC-89) OT346 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337 SMD laptop inverter SCHEMATIC TRANSISTOR K 2915 MOSFET schematic diagram of laptop inverter laptop CCFL inverter SCHEMATIC power transistors table smd transistor BC547 datasheet catalog mosfet Transistor smd NPN Transistor smd code LY 83
CIRCUIT DIAGRAM for LED TUBE LIGHT FOR HOME

Abstract: RE-6152 RP34-D100N N5 npn transistor RE-6041 B-01 npn transistor t12 Diode Mark N7 RS34-L0300N-CY6P4UP N0300N
Text: open-collector transistor PNP open-collector transistor RS34-L0300P-CY6C4U2 NPN open-collector transistor RS34-L0500N-CY9C4U2 PNP open-collector transistor RS34-D0500P-CY9C4U2 NPN open-collector transistor RS34-D0100N-CY9C4U2 PNP open-collector transistor RS34-D0100P-CY9C4U2 NPN open-collector transistor RS34-L0300N-CY6P4UP PNP open-collector transistor RS34-L0300P-CY6P4UP NPN open-collector transistor RS34-L0500N-CY9P4UP PNP open-collector transistor


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PDF SUS304) RP34-N0300N CIRCUIT DIAGRAM for LED TUBE LIGHT FOR HOME RE-6152 RP34-D100N N5 npn transistor RE-6041 B-01 npn transistor t12 Diode Mark N7 RS34-L0300N-CY6P4UP N0300N
2002 - HAT1058C

Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF FU 3024 BB304M wba sot23
Text: Transistor Product Lineup (Package) Base Chip 2SC4807 UPAK CMPAK (2 x 1.25) SMPAK (1.6 x 0.8 , -8 process is planned. 2.1 x 2.0 4.5 0.49 0.80 HITACHI SMALL SIGNAL TRANSISTOR Next , HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 , , Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants , regarding this document or Hitachi semiconductor products. HITACHI SMALL SIGNAL TRANSISTOR


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PDF notic50 SON3024-8 HAT1062G ADE-A08-003Q HAT1058C HAT2106G HAT1068C Hitachi MOSFET HAT3016G H5P0201MF FU 3024 BB304M wba sot23
Not Available

Abstract: No abstract text available
Text: . Therefore, an alumi num heat sink w ith dimensions o f 1 4 0 X 1 4 0 X 2 mm is used. W ith transistor , am , T h e rm a l Stability a n d R adia tion I Transistor C irc u ii One o f the characteristics o f , pera ture rises in a condition that certain voltage is applied to a transistor , the conductivity o f the elem ent is raised and current increases, and thereby the transistor consumes more power and , phenomenon th at will cause the transistor to be destructed in the end. T herefore, a design considering


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PDF 2SC3626
2009 - 2AS1213

Abstract: sot-25 marking 2SA1213 XC62E XC62ER
Text: external transistor . Low power and high accuracy are achieved through CMOS process and laser trimming , (Performance depends on the Battery powered equipment external transistor characteristics.) Palmtops , are liable to vary depending on which transistor is used. Please use a transistor with a low , representing continuous output due to the limitations of the 2AS1213 transistor 's power dissipation. 4/12 , parameters are liable to vary depending on which transistor is used. Please use a transistor with a low


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PDF XC62E ETR0311 2AS1213 sot-25 marking 2SA1213 XC62ER
79LOO

Abstract: No abstract text available
Text: the transistor Q 7 is decreased. S O A C o n tra i C ir c u it Fig. 1 NJM7800/78M( X )/78L00 , transistor produces the heat mentioned following equation. Ploss- 2 =(Vin ~ V o u t) x Io u t (W) Therefore , extreme high (T j= 150~ 200'C )· The transistor Q 4 is biased o ff normally at room temperature. W hen the junction temperature in the chip goes high, the output pass transistor Q s and Q 7 become cut off because the decreased Vbe turns on the transistor Q 4 then the transistor Q 4 makes a bypass o f the base


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2001 - mosfet schematic solenoid driver

Abstract: AN-7515 RFP70N06 ronan
Text: PowerMOS transistor data sheets can be applied to a wide range of applications very easily and expanded , transistor users to determine if their application lies within the rated capability of a power transistor , the condition specified and the PowerMOS transistor user has no way to calculate whether the , line, first we must determine the junction temperature of the PowerMOS transistor at the start of the , , requires the user to determine only the peak current through the PowerMOS transistor (IAS), the junction


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749 MOSFET TRANSISTOR motorola

Abstract: 749PC GE DC 300 ADJUSTABLE SPEED DRIVE 4151d MAX749CA MAX749EA zetex 749 MAX749CPA
Text: voltage greater than V+ + |-Voutmax I, E x te rn a l S w itchin g Transistor The MAX749 can drive a , . TRANSISTOR COUNT: 521; SUBSTRATE CONNECTED TO GND. A 1>1 X IA ! 4-159 , external P-channel MOSFET or a PNP transistor . +2.0V to +6.0V Input Voltage Range Flexible Control of , M A X 749 ABSOLUTE MAXIMUM RATINGS V + , guaranteed by design to be 1,8V min for V+ = 2V to 6V for T a = T m in to T m a x - V il is guaranteed by


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PDF MAX749 -100V 500kHz) 1178mm) 749 MOSFET TRANSISTOR motorola 749PC GE DC 300 ADJUSTABLE SPEED DRIVE 4151d MAX749CA MAX749EA zetex 749 MAX749CPA
2002 - RFP70N06

Abstract: AN75 AN-7515 AN9322
Text: transistor user has no way to calculate whether the particular application ysexceeds the device rating , the PowerMOS transistor (IAS), the emi- junction temperature at the start of the UIS pulse (TJ) and the time the transistor remains in avalanche (tAV). It allows onuctor, the easy determination of the , PowerMOS transistor (see Figure 1) is presented as a chart with a vertical axis of (IAS) maximum , junction temperature of the PowerMOS transistor at the start of the UIS pulse. If the UIS stress occurs


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2007 - XC62E

Abstract: sot-25 marking 2SA1213 XC62ER Transistor Catalog
Text: external transistor . Low power and high accuracy are achieved through CMOS process and laser trimming , (Performance depends on the Battery powered equipment external transistor characteristics.) Palmtops , for the parameters are liable to vary depending on which transistor is used. Please use a transistor , is not a value representing continuous output due to the limitations of the 2AS1213 transistor , transistor is used. Please use a transistor with a low saturation voltage level and hFE equal to 100 or more


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PDF XC62E ETR0311 sot-25 marking 2SA1213 XC62ER Transistor Catalog
2003 - Thermal Design

Abstract: transistor q7 BUT 11 Transistor transistor TA 78L 78l00 NJM7800 78M00 NJM79L00 NJU7211U NJU7212U
Text: (Tj=150~200°C). The transistor Q4 is biased off normally at room temperature. When the junction temperature in the chip goes high, the output pass transistor Q6 and Q7 become cut off because the decreased VBE turns on the transistor Q4 then the transistor Q4 makes a bypass of the base current of the transistor Q6. (1-2) Overcurrent Protection Circuit The overcurrent protection circuit limits the current to protect the output pass transistor against the overcurrent like as accidental short-circuit


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a1870

Abstract: a1873 A2762 A1887 A1873-002 A0881-L55 A1882 274 transistor A086-J HOA0880-P51
Text: . Transistor Darlington Transistor T ransistor D arlington Transistor 286 20 .100 346 .040 x .025 .050 , Transistor .125 278 ^ ^ ^ ' / T '' -_ I " -~ .060 X . 010 .060 X .050 .060 x .050 .060 X , x x x .010 .050 .050 .050 .010 .050 .050 .050 Transistor .125 278 <£>. T ransistor .125 278 : =~h W - , - .040 x .006 Transistor Darlington .070 282 H O , .010 T ransistor Transistor D arlington 0.3 1.8 4.0 20 .125 338 HOAO 88 X series em


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PDF A0825-001 A0825-002* A0825-003* A0825-004* 0-L51 0-L55 1-L55 2-L55 5-L51 5-L55 a1870 a1873 A2762 A1887 A1873-002 A0881-L55 A1882 274 transistor A086-J HOA0880-P51
2002 - AN75

Abstract: AN-7515 RFP70N06
Text: the PowerMOS transistor user has no way to calculate whether the particular application Sysexceeds , ration, the peak current through the PowerMOS transistor (I AS), the Semi- junction temperature at the start of the UIS pulse (TJ) and the time the transistor remains in avalanche (tAV). It allows , rating for a PowerMOS transistor (see Figure 1) is Pulse presented as a chart with a vertical axis of , temperature line, first we must determine the junction temperature of the PowerMOS transistor at the start of


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2007 - Not Available

Abstract: No abstract text available
Text: an external transistor . Low power and high accuracy are achieved through CMOS process and laser , external transistor characteristics.) ●Palmtops ●Reference voltage sources Maximum Output , on which transistor is used. Please use a transistor with a low saturation voltage level and hFE , output due to the limitations of the 2AS1213 transistor 's power dissipation. 4/12 XC62E Series , characteristics for the parameters are liable to vary depending on which transistor is used. Please use a


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PDF XC62E ETR0311
1999 - irf840 pwm ac motor

Abstract: transistor irf840 frequency range irf840 mosfet TRANSISTOR mosfet IRF840 inverter irf840 pwm for dc to dc chopper using igbt 200v dc motor igbt switched reluctance motor IGBT pwm ac chopper control of single phase induction STGP10N50
Text: . Maurice, G. Izzo, T. Castagnet 1. INTRODUCTION 3.1 Single Transistor Chopper The increase of the , the intrinsic transistor characteristics and the requirements of the application. These main , . 3. COMPARISON OF DRIVE TOPOLOGIES A single transistor chopper application was tested using two , transistor . It can be seen that the MOSFET has the lower losses below 5A peak current, and the IGBT above , asymmetric half bridge topology. Figure 1. Single Transistor Chopper +VCC The comparison involves


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schematic diagram 48 volt UPS

Abstract: 12 volt zener diode on pspice 74 Series IC Manual TM3J 750 ohm resistor pnp npn dual emitter connected pnp high emitter base voltage 15 volt transistor schottky model spice 7.5 volt zener diode on pspice design manual
Text: Series 710 712 713 723 724 734 736 747 Die Size mils 33 x 33 47 x 53 53 x 66 70x66 74 x 79 98 x 79 98 x 105 118 x 119 Die Size square mils 1089 2491 3498 4620 5846 7742 10290 14042 Pads 4 17 22 25 30 30 , transistor in the 700 Series has three modes of operation, NPN transistor , lateral PNP transistor , and substrate PNP transistor . Pin Function 1. NPN Base, PNP Collector 2. NPN Emitter 3. NPN Collector, PNP , Emitter NPN Transistor As an NPN transistor there are two separate bases and three emitters which you


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PDF 800MHz) schematic diagram 48 volt UPS 12 volt zener diode on pspice 74 Series IC Manual TM3J 750 ohm resistor pnp npn dual emitter connected pnp high emitter base voltage 15 volt transistor schottky model spice 7.5 volt zener diode on pspice design manual
EM7164SU16

Abstract: EM7164SU16W DIE 8INCH T&R
Text: Preliminary EM7164SU16W Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 , Series 1Mx16 Single Transistor RAM MEMORY FUNCTION GUIDE EM X XX X X X XX X X - XX XX 1. EMLSI , 1Mx16 Single Transistor RAM 1M x16 bit Single Transistor RAM GENERAL DESCRIPTION The EM7164SU16 is 16,777,216 bits of Single Transistor RAM which uses DRAM type memory cells, but this device has


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PDF EM7164SU16W 1Mx16 100ns 120ns EM7164SU16 DIE 8INCH T&R
2003 - C 13 PH Zener diode

Abstract: C 11 PH Zener diode C 12 PH Zener diode C 15 PH Zener diode ISOmodem CMPZ4707 MJD2955 Si322x DPak Package size
Text: transistor with its minimum specified PCB pad is rated at 1.75 W ­ 0.014 W/°C x (85 °C ­ 25 °C) = 0.91 W , ­ 36V) x (0.020625A + 0.004A) = 0.985W The nominal operating point for the transistor (VCE = 20 V , estimated as: Tj = ja x Pd + Ta, which yields: However, PQ exceeds the transistor 's derated Pd(max) of , length is zero, the Rw x Lw term in Equation 2 vanishes resulting in Equation 3 . Units ja , transistor used in the linear regulator is obtained using Equation 9 (with both channels simultaneously


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PDF Si3200 C 13 PH Zener diode C 11 PH Zener diode C 12 PH Zener diode C 15 PH Zener diode ISOmodem CMPZ4707 MJD2955 Si322x DPak Package size
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