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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
UJ3C065080T3S UJ3C065080T3S ECAD Model UnitedSiC Power Field-Effect Transistor
UF3C065080B7S UF3C065080B7S ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-7L
UF3C120150K4S UF3C120150K4S ECAD Model UnitedSiC 1200V-150mΩ SiC FET TO-247-4L
UF3SC120040B7S UF3SC120040B7S ECAD Model UnitedSiC 1200V-35mΩ SiC FET D2PAK-7L
UJ3C065080B3 UJ3C065080B3 ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-3L
UJ4C075023B7S UJ4C075023B7S ECAD Model UnitedSiC 750V-23mΩ SiC FET D2PAK-7L

transistor D 1710 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - DIODE d1d

Abstract: diode d3d 25C5250 B23G diode D2B
Text: 32 D2B 31 B2B 30 OutD 29 OutD Out D OutD 28 27 26 OutD 25 B23G 1 VP 2 Gnd 3 OutG 4 OutG 5 OutG 6 , Output Power Before and After Test VP 6 10 ­ V BW Pout PAE Pout 1710 33 35 31.5 ­ ­ ­ 34 43 32.4 , RF transistor gate, and in series with a current source, connected to VSS (Pin 32). An external , . Biasing circuit is made of an internal resistor connected to RF transistor gate, and in series with a , 2nd DCS stages. An opened drain transistor connected to this pin, with VSS as gate voltage, gives a


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PDF MRFIC1859 GSM900/DCS1800 MRFIC1859 AN1599 MRFIC0913 MC33169 AN1697 DIODE d1d diode d3d 25C5250 B23G diode D2B
2001 - transistor d 1710

Abstract: v5856 circuit 5 lo 265 MD59-0062
Text: Upconverter/Driver 1710 - 1910 MHz Pin Configuration GND LOA VDD 3 GND DC and RF ground 4 , CDMA Upconverter/Driver, 1710 - 1910 MHz MD59-0062 V 2.00 Electrical Specifications: VDD = 3.0V , Frequency = 1710 - 1910 MHz Noise Figure LO Power = -10 dBm VSWR (All Ports) 24 dBm 7 , 1710 - 1910 MHz dBm 0 Noise Figure LO Frequency = 1580 - 1780 MHz dB 10 IDD LO , additional data sheets and product information. 2 PCS CDMA Upconverter/Driver, 1710 - 1910 MHz MD59


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PDF MD59-0062 MO-220A MD59-0062 MD59-0062TR transistor d 1710 v5856 circuit 5 lo 265
Not Available

Abstract: No abstract text available
Text: transistor - November 1992 BFQ136 N AUER PHILIPS/DISCRETE 722 blE D , transistor - November 1992 BFQ136 N AUER PHILIPS/DISCRETE 723 blE D , transistor — — BFQ136 N AUER PHILIPS/DISCRETE b^E ] > PINNING DESCRIPTION NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. Ail leads are isolated from , output voltage lc = 500 mA; VC = 15 V; E dim= -6 0 d B ; Rl = 75 £2; W n = 793.25 MHz; T ^ = 25


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PDF 0031b73 BFQ136 OT122A
transistor 1548 b

Abstract: transistor a 1707 BFQ136 NPN/acsl 086 s
Text: transistor BFQ136 - N AMER PHILIPS/DISCRETE bRE D Fig.2 Intermodulation distortion MATV test circuit. 120 , specification NPN 4 GHz wideband transistor BFQ136 - N AMER PHILIPS/DISCRETE b^E D ISO0 lc = 500 mA; VCE = 15 , specification NPN 4 GHz wideband transistor BFQ136 - N ANER PHILIPS/DISCRETE blE D Table 1 Common emitter , wideband transistor BFQ136 ^^^^ N AHER PHILIPS/DISCRETE b^E J> DESCRIPTION NPN transistor in a four-lead , specification NPN 4 GHz wideband transistor BFQ136 N AMER PHILIPS/DISCRETE fc^E ]> LIMITING VALUES In


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PDF ttiS3T31 0031fci7c! BFQ136 OT122A transistor 1548 b transistor a 1707 BFQ136 NPN/acsl 086 s
2001 - Not Available

Abstract: No abstract text available
Text: 04JAN02 Freescale Semiconductor, Inc. this document by MRFIC1859/ D Order Freescale Semiconductor, Inc. MRFIC1859 VSS D2B B2B OutD 32 31 30 29 OutD Out D OutD 28 27 , 10 – V Frequency Range BW 1710 – 1785 MHz Output Power Pout 33 , RF transistor gate, and in series with a current source, connected to VSS (Pin 32). An external , buffer stage. Biasing circuit is made of an internal resistor connected to RF transistor gate, and in


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PDF MRFIC1859 MRFIC1859 GSM900/DCS1800 IP405, MRFIC1859/D 04JUL02 04JAN02
2000 - kt812

Abstract: TQFP-32EP transistor D 1710
Text: Order this document by MRFIC1859/ D Advance Information MRFIC1859 Dual-Band/GSM 3.6 V , MRFIC1859 PIN CONNECTIONS VSS 32 D2B 31 B2B 30 OutD 29 OutD Out D OutD 28 27 26 OutD 25 B23G 1 VP 2 Gnd , Output Power Before and After Test VP 6 10 ­ V BW Pout PAE Pout 1710 33 35 31.5 ­ ­ ­ 34 43 32.4 , VSS 13 12 Out 11 VP 10 InV 9 NinV LDO 8 14 MTSF3N02* S S S G C20 N.C. R6 10k D D D D C23 100 nF R7 , Frequency 36 35 34 Pout (dBm) 33 32 31 30 1710 3.0 V 42 TA = 25°C Pin = 5.0 dBm 1725 1740 1755 1770 1785 41


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PDF MRFIC1859/D MRFIC1859 MRFIC1859 GSM900/DCS1800 kt812 TQFP-32EP transistor D 1710
2001 - kt812

Abstract: No abstract text available
Text: Order this document by MRFIC1859/ D Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 , D1B 15 B1D 16 InD D2B 31 B2B 30 OutD 29 OutD Out D OutD 28 27 26 OutD 25 24 B23D 23 D2D 22 D2D 21 VSC , VD1D,D2D,D3D for specified power) |S11| Pon Poff NP VSS TS Pspur BW Pout PAE Pout 1710 33 35 31.5 ­ ­ ­ , stages. Biasing circuit is made of an internal resistor connected to RF transistor gate, and in series , internal resistor connected to RF transistor gate, and in series with a current source, connected to VSS


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PDF MRFIC1859/D MRFIC1859 GSM900/DCS1800 MRFIC1859 kt812
2000 - TQFP-32EP

Abstract: transistor D 1710 TRANSISTOR D 1785 MC33170 MRFIC1859 MRFIC1859R2 D3G 21 t8 ballast circuits T-4718 Angle dimension representation in tables as per ASME
Text: Order this document by MRFIC1859/ D MRFIC1859 Dual-Band/GSM 3.6 V Integrated Power Amplifier , CONNECTIONS VSS D2B B2B OutD 32 31 30 29 OutD Out D OutD 28 27 OutD 26 , V Frequency Range BW 1710 ­ 1785 MHz Output Power Pout 33 34 ­ , and third stages. Biasing circuit is made of an internal resistor connected to RF transistor gate , is made of an internal resistor connected to RF transistor gate, and in series with a current


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PDF MRFIC1859/D MRFIC1859 MRFIC1859 GSM900/DCS1800 TQFP-32EP transistor D 1710 TRANSISTOR D 1785 MC33170 MRFIC1859R2 D3G 21 t8 ballast circuits T-4718 Angle dimension representation in tables as per ASME
2001 - D3G 21

Abstract: RF Product Device Data t8 ballast circuits MC33170 MRFIC1859 MRFIC1859R2 B2B diode motorola ic inv buffer transistor d 1710
Text: Semiconductor, Inc. this document by MRFIC1859/ D Order Freescale Semiconductor, Inc. MRFIC1859 VSS D2B B2B OutD 32 31 30 29 OutD Out D OutD 28 27 OutD 26 25 B23G 1 , 10 ­ V Frequency Range BW 1710 ­ 1785 MHz Output Power Pout 33 34 , of an internal resistor connected to RF transistor gate, and in series with a current source , transistor gate, and in series with a current source, connected to VSS (Pin 32). An external resistor allows


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PDF MRFIC1859 MRFIC1859 GSM900/DCS1800 04JUL02 04JAN02 MRFIC1859/D D3G 21 RF Product Device Data t8 ballast circuits MC33170 MRFIC1859R2 B2B diode motorola ic inv buffer transistor d 1710
2003 - equivalent transistor c 243

Abstract: No abstract text available
Text: RD01MUS1 Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION 4.6MAX RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. 1.5 , Power Transistor 520MHz,1W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE *1:The , ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor , RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W EQUIVALENT CIRCUIT


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PDF RD01MUS1 520MHz RD01MUS1 520MHz 48MAX 53MAX equivalent transistor c 243
2002 - MD59-0062

Abstract: FQFP-N-20
Text: + IN MD59-0062 PCS CDMA Upconverter/Driver 1710 - 1910 MHz Pin Configuration LO in Power , RF Frequency = 1710 - 1910 MHz Noise Figure LO Frequency = 1580 - 1780 MHz IDD LO Power = , Conversion Gain V CTRL = Logic Low (0 Volts) CDMA Linear Output Power RF Frequency = 1710 - , Operating Instructions The MD59-0062 is a highly integrated MMIC upconverter / driver for the 1710 - 1910 , transistor in series with the self-bias resistor, you can dynamically switch the current draw in the driver


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PDF MD59-0062 MO-220A AM59-0062 AM59-0062TR FQFP-N-20
4G Signals

Abstract: No abstract text available
Text: - mobility-transistor (pHEMT) antenna switches, the size of the field-effect transistor (FET) used as the active , GSM Tx1 band from 824 to 915 MHz and typically 1.0 dB in the GSM Tx2 band from 1710 to 2179 MHz. It , band from 1710 to 2170 MHz was typically 0.75 dB, while the insertion loss in the GSM receive band , isolation from the Tx2 port to all other ports, from 1710 to 1910 MHz. The transmit/receiver- port-to-transmit/receive-port (TRxtoTRx-port) isolation from 1710 to 1980 MHz was typically better than 25 dB. The


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PDF SP10T 4G Signals
cd4522

Abstract: CD4522B RCA Solid State ICAN-6525
Text: Its Respective Manufacturer File No. 1710 CD4522B Types DIMENSIONAL OUTLINES ( D ) Suffix JEDEC , BCD format. The CD4522B types are supplied in 16-lead dual-in-line ceramic packages ( D and F suffixes , :.Derate Linearly at 12 mW/°C to 200 mW For Ta = -55 to +100°C (PACKAGE TYPES D , F, K). 500 mW For Ta = +100 to +125° C (PACKAGE TYPES D , F, K).Derate Linearly at 12 mW/°C to 200 mW DEVICE DISSIPATION PER OUTPUT TRANSISTOR For Ta = FULL


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PDF CD4522B 20-Volt 92cs-39i 15-Vparametric 92CS-I727IR3 cd4522 RCA Solid State ICAN-6525
BGY210

Abstract: Philips DATA Handbook system UHF amplifier module DCS1800 SC09 2222 030 capacitor philips MSA489 MSA915 BGY21
Text: Division Multiple Access (TDMA) operation (DCS1800 systems) in the 1710 to 1785 MHz frequency range , SOT321B package. The module consists of three NPN silicon planar transistor chips mounted together with , : 8 1710 to 1785 6 4 2 27 35 50 1996 May 13 2 Philips Semiconductors , 6 V; VC 4 V; f = 1710 to 1785 MHz; Tmb = 25 °C; = 1 : 8; tp = 575 µs; unless otherwise specified , handbook, halfpage (dBm) 25 1710 MHz 1785 MHz 1710 MHz 15 20 1785 MHz 10 5 0


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PDF BGY210 OT321B DCS1800 BGY210 OT321B Philips DATA Handbook system UHF amplifier module SC09 2222 030 capacitor philips MSA489 MSA915 BGY21
2010 - RD07MUS2B

Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Text: RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor ,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE , Transistor ,175MHz,527MHz,7W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS , , Silicon MOSFET Power Transistor ,175MHz,527MHz,7W TYPICAL CHARACTERISTICS (These are only typical , DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor ,175MHz,527MHz,7W


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PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
16D 22 varistor

Abstract: ERZVA9D270 ERZVA9V220 ERZVA7D680 znr k 330 ERZV14V680 ERZVA9D470 ERZV14V470 ERZV14D470 ERZVA7V330
Text: ÒZNR®Ó Transient/Surge Absorbers, ÒSeries VÓ (Type D ) ÒZNR ®Ó Transient/Surge Absorbers (Low Voltage Rating) V D Series: Type: ÒZNR® Ó Transient/Surge Absorber, Series V is newly released , diode s Recommended Applications q Transistor , diode, IC, thyristor or triac semiconductor , for technical consultation. ÒZNR®Ó Transient/Surge Absorbers, ÒSeries VÓ (Type D ) s Reference Guide to Standard Products (Series V, Type D ) Maximum Allowable Voltage Varisto VoltageV ACrms


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PDF ERZV05V220CS ERZV07V220CS ERZV10V220CS ERZV14V220CS ERZV05V270CS ERZV07V270CS ERZV10V270CS ERZV14V270CS ERZV05V330CS ERZV07V330CS 16D 22 varistor ERZVA9D270 ERZVA9V220 ERZVA7D680 znr k 330 ERZV14V680 ERZVA9D470 ERZV14V470 ERZV14D470 ERZVA7V330
2008 - RD07MUS2B

Abstract: RD07MUS2
Text: RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor ,175MHz,527MHz,7W DESCRIPTION OUTLINE , FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. 2.0 , Power Transistor ,175MHz,527MHz,7W TYPICAL CHARACTERISTICS (These are only typical curves and devices , ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor , =0.3W Idq=250mA d Gp 10 8 60 40 80 6 60 d Ta=+25°C Vdd=7.2V Pin=0.3W Idq


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PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) RD07MUS2
2009 - RD07MUS2B

Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
Text: RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor ,175MHz,527MHz,7W DESCRIPTION OUTLINE , FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. 2.0 , Power Transistor ,175MHz,527MHz,7W TYPICAL CHARACTERISTICS (These are only typical curves and devices , ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor , =0.3W Idq=250mA d Gp 60 40 6 60 d Ta=+25°C Vdd=7.2V Pin=0.3W Idq=250mA 4 Idd


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PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
2009 - RD07MUS2B

Abstract: f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
Text: RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor ,175MHz,527MHz,7W DESCRIPTION OUTLINE , FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. 2.0 , Power Transistor ,175MHz,527MHz,7W TYPICAL CHARACTERISTICS (These are only typical curves and devices , ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor , =0.3W Idq=250mA d Gp 60 40 6 60 d Ta=+25°C Vdd=7.2V Pin=0.3W Idq=250mA 4 Idd


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PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
2003 - wirelesscommunication

Abstract: MGP175 philips catalog resistors Q 371 Transistor RF Transistor s-parameter vhf BLF245 iec 947 156-1
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF245 VHF power MOS transistor Product , VHF power MOS transistor FEATURES BLF245 PIN CONFIGURATION · High power gain · Low noise figure · Easy power control lfpage 1 4 · Good thermal stability d · Withstands full load mismatch. g MBB072 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is


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PDF M3D065 BLF245 MBB072 OT123A SCA75 613524/04/pp16 wirelesscommunication MGP175 philips catalog resistors Q 371 Transistor RF Transistor s-parameter vhf BLF245 iec 947 156-1
smd JSs diode

Abstract: smd JSs transistor smd JSs smd JSs 13
Text: 1710 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor , Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor , interface to C-MOS, TTL, etc. PHP1025 PINNING - SOT96-1 (S08) PIN 1 2 3 4 5 6 7 8 SYMBOL s s s g d d d d source source source gate drain drain drain drain DESCRIPTION APPLICATIONS · Power , transistor in an 8-pin SOT96-1 (S08) SMD plastic package. CAUTION The device is supplied in an antistatic


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PDF PHP1025 OT96-1 b--25 smd JSs diode smd JSs transistor smd JSs smd JSs 13
Not Available

Abstract: No abstract text available
Text: MHz — 1st IF: 130 to 300 MHz — 2nd IF: 26 to 60 MHz TX: — RF: 1710 to 1785 MHz — IF: 120 , (Vcc = 3 V) RX mode: 42.5 mA Typ (including IFVCO current (2.5 mA Typ) + LNA transistor current (5.6 , collector type output of LNA. The collector of LNA transistor . 4 VCCLNA Vcc VCC of LNA block , RF signal JNput Input of LNA. The base of LNA transistor 7 POONTX Input POwer ON for , block 23 IFVCOO Output IFVCO Output Emitter of IFVCO transistor 24 IFVCOI Input


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PDF HD155111F ADE-207-257 48-pin 1747MHz, 1735MHz FP-48
transistor c1213

Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 1606 mosfet
Text: ERICSSON í PTE 10036* 85 Watts, 8 6 0 - 9 0 0 MHz L D M O S Field Effect Transistor Description , reliability. 100% lot traceability is standard. · · Input IN T E R N A L L Y M A T C H E D for ease of circuit , Efficiency 60 a > S o - " 40 40 c a > ~ S* it. W W W - '. V . D = vD 1 ID Q - , = 0 V, ID = 5 m A V d S = 28 V, V qs = 0 V V D S= 10 V, Id = 75 mA V d s = 10 V, Id = 3 A Symbol , a d M i s m a tc h T o le ra n c e ( V d d = 28 V, Pout = 85 W (PEP), I d q = 600 mA, f = 867


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PDF
2003 - blf245

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D065 BLF245 VHF power MOS transistor Product , VHF power MOS transistor BLF245 PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control lfpage 1 4 • Good thermal stability d â , transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is , VHF power MOS transistor BLF245 LIMITING VALUES In accordance with the Absolute Maximum System


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PDF M3D065 BLF245 MBB072 OT123A SCA75 613524/04/pp16 blf245
2000 - MO-187

Abstract: ZXT12P12DX ZXT12P12DXTA ZXT12P12DXTC t12p12dx DSA0037452
Text: ZXT12P12DX SuperSOT4TM DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 47m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the , Dissipation at TA=25°C (a)( d ) Linear Derating Factor PD 0.87 6.9 W mW/°C Power Dissipation at , =25°C (b)( d ) Linear Derating Factor PD 1.25 10 W mW/°C Operating and Storage Temperature , Junction to Ambient (a)( d ) R JA 143 °C/W Junction to Ambient (b)( d ) R JA 100 °C/W


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PDF ZXT12P12DX MO-187 ZXT12P12DX ZXT12P12DXTA ZXT12P12DXTC t12p12dx DSA0037452
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