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Part Manufacturer Description Datasheet Download Buy Part
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

transistor CB 308 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor BC 308

Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Text: statique VI - A The transistor BC 308 is grouped in three classes of OC gain VI - A - B Le transistor BC 308 ast subdivisé en trois classes da gain statique V! - A - B The transistor BC 309 is grouped in , 308 is grouped in three classes of small signal current gain VI - A - B La transistor BC 308ast , MPN SILICON TRANSISTOR , EPITAXIAL PLANAR rRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL * BC 307 BC 308 BC 309 % Preferred device Dispositif recommandé SC 309 and BC 308 transistors are intended or


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PDF BC307 CB-76 307ast 308ast transistor BC 308 transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
2003 - 2SD2012

Abstract: 2sd2012 transistor transistor 2SD2012
Text: 2SD2012 ® NPN SILICON POWER TRANSISTOR s s s HIGH DC CURRENT GAIN LOW SATURATION , PURPOSE SWITCHING s DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO , ) V CB = 60 V 100 µA I EBO Emitter Cut-off Current (I C = 0) V EB = 7 V 100 µA , Transition frequency V CE = 5 V Collector-Base Capacitance V CB = 10 V fT C CBO 2/5 0.4 , 15.67 16.07 0.617 0.633 L7 8.99 9.39 0.354 0.370 L8 Dia 4/5 3.30 3.08


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PDF 2SD2012 2SD2012 O-220F O-220F 2sd2012 transistor transistor 2SD2012
2003 - 2sd2012

Abstract: No abstract text available
Text: 2SD2012 ® NPN SILICON POWER TRANSISTOR I I I HIGH DC CURRENT GAIN LOW SATURATION , PURPOSE SWITCHING I DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO , ) V CB = 60 V 100 µA I EBO Emitter Cut-off Current (I C = 0) V EB = 7 V 100 µA , Transition frequency V CE = 5 V Collector-Base Capacitance V CB = 10 V fT C CBO 2/5 0.4 , Dia 4/5 3.30 3.08 0.130 3.28 0.121 0.129 2SD2012 Information furnished is


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PDF 2SD2012 2SD2012 O-220F O-220F
nec hf 324

Abstract: transistor NEC B 617 transistor NEC D 587 nec 2501 Le 629 341S NEC 2501 LE 737 2SC5338 transistor lc 7822 c
Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5338 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R , Order Interm odu ration Distortion Symbol ICBO I ebo V cb V eb = 2SC5338 Test Conditions 2 0 V , NF im 2 Vce Vce V cb V ce V ce = 5 V, lc 5 V, lc = 50 mAN ote2 50 mA = 50 6.0 , - Bese to Emitter Voltage - V hFE - lc Characteristics Cob - V cb C haracteristics hFE- D C Current Gain J CE = 10 V >Vr 0.1 1 10 100 1000 V cb lc -


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PDF 2SC5338 2SC5338 2SC4703 nec hf 324 transistor NEC B 617 transistor NEC D 587 nec 2501 Le 629 341S NEC 2501 LE 737 transistor lc 7822 c
Not Available

Abstract: No abstract text available
Text: TRANSISTOR N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast , €¢ gold-metallization ensures excellent reliability. The transistor has a Z )n 6-lead flange envelope with a ceramic , sparingly and evenly distributed. 308 August 1986 r b'lE t > N AMER PHILIPS/DISCRETE m bb53^3i oo a a 'isi a m IAPX BLV25 V.H.F. power transistor RATINGS Limiting values in , ; V CB = 25 V — IE = 20 A; V c b = 2 5 V typ. typ. 50 15 to 100 1,6 V typ. typ


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PDF BLV25
2000 - A64 marking amplifier

Abstract: MMIC A64 marking RF TRANSISTOR 1.5 GHZ A64 TRANSISTOR A64 marking A64 amplifier SGA-6489 MMIC RF 1.5 GHZ A64 transistor tl 187 RF TRANSISTOR A64
Text: Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high , 29.4 30.8 24.7 14.4 12.5 10.8 ORL Output Return Loss dB 18.2 15.8 20.6 , Frequency (Mhz) Reference Designator 1 uF 1000 pF 500 850 1950 2400 3500 CB , 68 nH 33 nH 22 nH 18 nH 15 nH CD LC 4 1 SGA-6489 3 RF in RF out CB 2 CB Recommended Bias Resistor Values for Id=75mA Supply Voltage(VS) RBIAS 7.5 V 8V 33


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PDF SGA-6489 SGA-6489 DC-3500 EDS-100621 A64 marking amplifier MMIC A64 marking RF TRANSISTOR 1.5 GHZ A64 TRANSISTOR A64 marking A64 amplifier MMIC RF 1.5 GHZ A64 transistor tl 187 RF TRANSISTOR A64
TE1300

Abstract: Sprague 1C10C0G102J050B HY550 5HKP10 SPRAGUE 5GAP10 5GAP10
Text: 3.49 3.32 3.08 2.88 926-0187 TVA1310.1 50 120 7 /16 ¥ 1 9 /32 1.25 1.10 1.07 .99 .91 926-0306 , 1.10 1.07 .99 .91 926-0308 TVA1906 500 20 7 /8 ¥ 2 1 /8 3.64 3.25 3.08 2.86 2.67 926-0191 TVA1312 , , Performance Characteristics, Shelf Life, Construction, With Either Transistor or Modified Electron-Tube , Long Battery Life When Used in Battery Bypass Applications 926-0334 TE1207 25 CB 1.76 1.28 1.09 , TE1300 1 BA 1.63 1.15 .98 BA 0.260 0.536 CC 0.322 0.848 926-0350 TE1304.2 15 CB 1.82 1.30 1.09 BB 0.260


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PDF TST10 TSD10 TGS10 TGS50 TGP10 5TSD10 926-322um TE1207 TE1209 TE1211 TE1300 Sprague 1C10C0G102J050B HY550 5HKP10 SPRAGUE 5GAP10 5GAP10
SP8735B

Abstract: SP8630B SP8690A
Text: ±2) 28 ty p e No. Description SL1613 SL523B/C/ CB *# Dual successive deieclio i I3L531 , ) 126 4 Input Noise Voltage ; Page : Matched Transistor Arrays Type No LV CEO Mfn Typ , performance transistor arrays 6V 9V 12mA 5.0GHz 6 20 at 8mA 58 SL2365 Very high performance transistor array 6V 9V 8mA 5.0GHz 8 50 at 8mA 60 SL3145 NPN transistor arrays 15V 25V 20mA 1.6GHz 5 40 at 1 mA 75 SLS227 NPN transistor arrays 6V


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PDF SL3522 600MHz 80MHz 8L1615 5L2524A# 300MHz SL2524B/C# 1000MHz SL521A/B/C# SP8735B SP8630B SP8690A
1997 - BF 494 C

Abstract: ic sc 6200 AT-38043-TR1 transistor 2222a data sheet 5-04P SOT c5 87 L 146 CB AT-38043-BLK AT-38043-TR2 AT-38043
Text: NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features · Operates , Hewlett Packard's AT-38043 is a low cost, NPN silicon bipolar junction transistor housed in a miniature , Lb R = Rb L = La C = Cb C = Cb E1 L = La C = Ca Label Value 0.1 Ra 0.2 Rb 0.85 nH La 0.25 nH Lb 0.01 pF Ca 0.01 pF Cb R = Ra C = Ca C B R = Ra 10 , MJE RB RE RC 1 E2 L = Lb R = Rb L = Lb R = Rb C = Cb L = La C = Cb E R =


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PDF AT-38043 OT-343 SC-70) AT-38043 5966-1275E BF 494 C ic sc 6200 AT-38043-TR1 transistor 2222a data sheet 5-04P SOT c5 87 L 146 CB AT-38043-BLK AT-38043-TR2
2009 - SD500H-48

Abstract: SD-500H-12 SD-500L-12 SD500
Text: (DC) 30.8 ~35.2Volts(DC) 62~68Volts(DC) 16~19Volts(DC) 30.8 ~35.2Volts(DC) 62~68Volts(DC , Efficiency Isolation EMS (Note 4) series GENERAL SPECIFICATIONS IEC60950-1 CB approved by TUV 100M , heatsink of power transistor 80°C±5(L-48V,H-24V,H-48V), 85°C±5(L-24V) 90°C±5(L-12V), 95°C±5 (H


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PDF SD500 2000VAC SD500L-12 SD500L-24 SD500L-48 SD500H-12 SD500H-24 SD500H-48 40Amps 21Aission-critical SD500H-48 SD-500H-12 SD-500L-12 SD500
L1201

Abstract: 2N2060J 2N2060JTX small signal transistor
Text: -195001270 . J '11 ~1. .8:6 : qo ~ Dual NPN Silicon Smal14ignal Transistor .dasignedfor genera~urpose , °C Derste above 25°C @ Tc = 25°C Derate above 25°C 540 600 3.43 2.12 12.1 3.08 1.5 8.6 mW , ,~~;~~~~~, IE = O) Y, ~:~~,~~xe Bre*down Voltage t:$flk = 100 @de, ic = O) Collector Cutoff Current ~ CB = , AND MIMAERO SMALL SIGNAL TRANSISTOR DATA *I2 nAdc q 2N2060JTX,JANS e o . COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA >13 `2N2060JTX,JANS PACWGE DIMENSIONS m3


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PDF 2N2080JWD 2N2060JTX, MIL4-195001270 Smal14ignal 1PHW4101 2N20MJTND L1201 2N2060J 2N2060JTX small signal transistor
2013 - Not Available

Abstract: No abstract text available
Text: 2N3866(A)UB Compliant NPN Silicon High-Frequency Transistor Qualified per MIL-PRF-19500/398 , transistor is military qualified up to the JANS level for high-reliability applications. It is also , Notes: 1. Derated linearly 3.08 mW/°C for T A > +25 °C MSC – Lawrence 6 Lake Street, Lawrence , DEFINITIONS Definition Symbol IB IC V BE V CB Surface Mount package Base current: The value of , 200 MHz Output Capacitance V CB = 28 V, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz 2.5 4.0 C obo


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PDF 2N3866 MIL-PRF-19500/398 O-205AD T4-LDS-0175-1,
transistor NEC D 822 P

Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R , Feed-back C apacitance Insertion Pow er Gain Noise Figure Noise Figure Sym bol ICBO I ebo hFE V cb = Veb = V ce = V ce = V cb = V ce = V ce = V ce = T e st Conditions M IN . TYP. MAX. Unit /xA , perature - 'C V cb - Collector to Base Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENT V ce = 1 , .378 .317 . 308 .299 .297 .288 .274 .261 .255 .260 .243 .239 .245 .216 .235 .243 .233 .242 .249 .260


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PDF 2SC5336 2SC3357 transistor NEC D 822 P transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
1999 - ic sc 6200

Abstract: transistor 2222a data sheet AT-38043 AT-38043-BLK AT-38043-TR1 AT-38043-TR2 at38043blk 38043 sc 6200 ic diagram
Text: NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features · Operates , Agilent's AT-38043 is a low cost, NPN silicon bipolar junction transistor housed in a miniature SC , B L = La C = Ca C L = Lb R = Rb L = La C = Cb C = Cb E1 L = La C = Ca Label Value Ra 0.1 Rb 0.2 La 0.85 nH Lb 0.25 nH Ca 0.01 pF Cb 0.01 pF R = Ra C = Ca , ). Packaged Model R = Ra 9 Vcb (V) E2 L = Lb R = Rb L = Lb R = Rb C = Cb L


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PDF AT-38043 OT-343 SC-70) AT-38043 5966-1275E ic sc 6200 transistor 2222a data sheet AT-38043-BLK AT-38043-TR1 AT-38043-TR2 at38043blk 38043 sc 6200 ic diagram
SL6 TRANSISTOR

Abstract: No abstract text available
Text: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features · High gain bandwidth product fT= 13.5 GHz typ · High gain, low noise figure PG = 18 dB typ. NF = , conditions lc = 10 [lA, lE= 0 = 12 V, lE= 0 ^CBO ^CEO V Cb VC E = 9 V, Rbe = _ VE B= 1.5 V, lc = 0 , transistor . HITACHI 2 2SC5080 S Parameter (VOE= 5 V, Ic = 5 mA, Z0 = 50 Q.) Freq. (MHz) 200 400 600 , ANG. - 30.8 -60.8 - 83.0 -99.9 -114.5 -128.2 -139.6 -150.2 -160.5 -168.3 S21 MAG. 11.47 9.88 8.35 7.03


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PDF 2SC5080 D-85622 SL6 TRANSISTOR
2006 - SBA-5086Z

Abstract: SBA-5086
Text: -86 Product Description RFMD's SBA5086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor , 1950MHz 17.2 34.0 19.5 13.0 19.0 23 4.4 2400MHz 15.8 33.7 18.7 12.9 19 23 - 3500MHz 13.7 30.8 , sales-support@rfmd.com. 3 of 6 SBA5086Z Basic Application Circuit VS R BIAS 1 uF 1000 pF CD LC RF in CB 1 4 SBA5086Z 3 CB RF out 2 Evaluation Board Layout VS RBIAS 1 uF 1000 pF LC CD CB BA4 CB Mounting Instructions: 1. Use a large ground pad area under device pins 2 and 4


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PDF SBA5086Z OT-86 SBA5086Z SBA5086ZSQ SBA5086ZSR SBA5086ZPCK1 850MHz, SBA-5086Z SBA-5086
2006 - Not Available

Abstract: No abstract text available
Text: Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology , dBm 36.4 36.2 36.9 34.0 33.7 30.8 Output Power at 1dB Compression dBm 19.8 , CB 2 CB Evaluation Board Layout VS 1 uF RBIAS BA4 CB LC 1000 pF CD CB , Reference Designator 500MHz 850MHz 1950MHz 2400MHz 3500MHz 39pF CB 220pF 100pF


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PDF SBA5086Z OT-86 SBA5086Z SBA5086ZSQ SBA5086ZPCK1 SBA5086ZSR 850MHz,
equivalent sd 48 41

Abstract: SD-1000 1000W boost converter 12v to 36 v dc dc converter circuit diagram
Text: . Re-power on to recover 16 ~ 19V 30.8 ~ 35.2V 62 ~ 68V 16 ~ 19V 30.8 ~ 35.2V 62 ~ 68V , transistor 85 5 (TSW2 ) detect on heatsink of O/P diode; 75 OVER TEMPERATURE Protection type : Shut down , ~ 50 ) 10 ~ 500Hz, 2G 10min./1cycle, 60min. each along X, Y, Z axes IEC60950-1 CB approved by TUV I


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PDF SD-1000 2000VAC SD-1000L SD-1000L-12 SD-1000L-24 SD-1000L-48 SD-1000H-12 SD-1000H-24 SD-1000H-48 SVR51 equivalent sd 48 41 SD-1000 1000W boost converter 12v to 36 v dc dc converter circuit diagram
SD-500H-12

Abstract: SD-500 SD-500L-12 SD-500L-24 L-48V SD500H-48 500w 12v circuit diagram
Text: ., re-power on to recover 30.8 ~ 35.2V 62 ~ 68V 16 ~ 19V Protection type : Shut down o/p voltage, re-power on to recover 80 5 (TSW1 ) detect on heatsink of power transistor 16 ~ 19V 30.8 ~ 35.2V 62 , , Y, Z axes IEC60950-1 CB approved by TUV (Note 4) OTHERS , 10 ~ 95% RH I/P-O/P:2KVAC


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PDF SD-500 72VDC, 144VDC) 2000VAC SD-500L-12 SD-500L-24 SD-500L-48 SD-500H-12 SD-500H-24 SD-500H-48 SD-500H-12 SD-500 SD-500L-12 SD-500L-24 L-48V SD500H-48 500w 12v circuit diagram
Not Available

Abstract: No abstract text available
Text: . Re-power on to recover 16 ~ 19V 30.8 ~ 35.2V 62 ~ 68V 16 ~ 19V 30.8 ~ 35.2V 62 ~ 68V 88% 90% 85% 11.6A , ) detect on heatsink of power transistor 85 5 (TSW2 ) detect on heatsink of O/P diode; 75 OVER TEMPERATURE , -1 CB approved by TUV I/P-O/P:2KVAC I/P-FG:1.5KVAC O/P-FG:0.5KVAC I/P-O/P, I/P-FG, O/P-FG:100M Ohms


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PDF SD-1000 2000VAC SD-1000L-12 SVR51 SVR51 SD-1000-SPEC
Not Available

Abstract: No abstract text available
Text: ., re-power on to recover 30.8 ~ 35.2V 62 ~ 68V 16 ~ 19V Protection type : Shut down o/p voltage, re-power on to recover 80 5 (TSW1 ) detect on heatsink of power transistor 16 ~ 19V 30.8 ~ 35.2V 62 , . each along X, Y, Z axes IEC60950-1 CB approved by TUV EMC IMMUNITY MTBF OTHERS DIMENSION


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PDF SD-500 72VDC, 144VDC) 2000VAC SD-500L-24 SD-500L-48 SD-500H-12 SD-500H-24 SD-500H-48 SD-500-SPEC
500W dc/dc converter pwm

Abstract: sphd-002t-p0.5 500W dc/dc converter SPHD 001T PO.5 SD-500L-24 SD-500L-12 SD-500H-12 SD-500 500w 12v circuit diagram 500W TRANSISTOR
Text: ., re-power on to recover 30.8 ~ 35.2V 62 ~ 68V 16 ~ 19V Protection type : Shut down o/p voltage, re-power on to recover 80 5 (TSW1 ) detect on heatsink of power transistor 16 ~ 19V 30.8 ~ 35.2V 62 , , Y, Z axes IEC60950-1 CB approved by TUV (Note 4) OTHERS , 10 ~ 95% RH I/P-O/P:2KVAC


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PDF SD-500 72VDC, 144VDC) 2000VAC SD-500L-12 SD-500L-24 SD-500L-48 SD-500H-12 SD-500H-24 SD-500H-48 500W dc/dc converter pwm sphd-002t-p0.5 500W dc/dc converter SPHD 001T PO.5 SD-500L-24 SD-500L-12 SD-500H-12 SD-500 500w 12v circuit diagram 500W TRANSISTOR
1000W boost converter

Abstract: DIAGRAM in 12v 1000w sd-1000l-24 SD-1000 1000W TRANSISTOR dc to dc converter 12v to 19v
Text: ~ 19V 30.8 ~ 35.2V 62 ~ 68V 16 ~ 19V 30.8 ~ 35.2V 62 ~ 68V Protection type : Shut down o/p voltage, re-power on to recover 5 (TSW1 ) detect on heatsink of power transistor 85 5 (TSW2 , 10min./1cycle, 60min. each along X, Y, Z axes IEC60950-1 CB approved by TUV I/P-O/P:2KVAC I/P-FG


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PDF SD-1000 2000VAC SD-1000L-12 SD-1000L-24 SD-1000L-48 SD-1000H-12 SD-1000H-24 SD-1000H-48 720ing SVR51 1000W boost converter DIAGRAM in 12v 1000w sd-1000l-24 SD-1000 1000W TRANSISTOR dc to dc converter 12v to 19v
AVANTEK transistor

Abstract: No abstract text available
Text: Silicon Bipolar Transistor Avantek 70 mil Package Features • Q0Db472 • Low Noise , ance N PN silicon bipolar transistor housed in a hermetic, high reliability package. This device is , Cutoff Current: V c 8 = 8 V jiA lEBO Emitter Cutoff Current: V e b = 1 V HA C cB , AT-41470 Low Noise Silicon Bipolar Transistor Absolute Maximum R atings P a r a m e te r , -41470 Low Noise Silicon Bipolar Transistor _ Typical Scattering Parameters: Com m on


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PDF AT-41470 Q0Db472 000b474 AVANTEK transistor
500W dc/dc converter pwm

Abstract: SD-500L-24 500w 12v circuit diagram SPHD 001T PO.5 SD-500 SD-500L-12 352v SD500H-48 JST SPHD-002T-P0.5
Text: 16 ~ 19V 30.8 ~ 35.2V 62 ~ 68V Protection type : Shut down o/p voltage, re-power on to recover 80 5 (TSW1 ) detect on heatsink of power transistor 16 ~ 19V 30.8 ~ 35.2V 62 ~ 68V OVER , -1 CB approved by TUV (Note 4) OTHERS , 10 ~ 95% RH I/P-O/P:2KVAC I/P-FG:1.5KVAC O


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PDF D-63069 SD-500 72VDC, 144VDC) 2000VAC SD-500-SPEC 500W dc/dc converter pwm SD-500L-24 500w 12v circuit diagram SPHD 001T PO.5 SD-500 SD-500L-12 352v SD500H-48 JST SPHD-002T-P0.5
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