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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor CB 308 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor BC 308

Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Text: statique VI - A The transistor BC 308 is grouped in three classes of OC gain VI - A - B Le transistor BC 308 ast subdivisé en trois classes da gain statique V! - A - B The transistor BC 309 is grouped in , 308 is grouped in three classes of small signal current gain VI - A - B La transistor BC 308ast , MPN SILICON TRANSISTOR , EPITAXIAL PLANAR rRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL * BC 307 BC 308 BC 309 % Preferred device Dispositif recommandé SC 309 and BC 308 transistors are intended or


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PDF BC307 CB-76 307ast 308ast transistor BC 308 transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
2003 - 2SD2012

Abstract: 2sd2012 transistor transistor 2SD2012
Text: 2SD2012 ® NPN SILICON POWER TRANSISTOR s s s HIGH DC CURRENT GAIN LOW SATURATION , PURPOSE SWITCHING s DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO , ) V CB = 60 V 100 µA I EBO Emitter Cut-off Current (I C = 0) V EB = 7 V 100 µA , Transition frequency V CE = 5 V Collector-Base Capacitance V CB = 10 V fT C CBO 2/5 0.4 , 15.67 16.07 0.617 0.633 L7 8.99 9.39 0.354 0.370 L8 Dia 4/5 3.30 3.08


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PDF 2SD2012 2SD2012 O-220F O-220F 2sd2012 transistor transistor 2SD2012
2003 - 2sd2012

Abstract: No abstract text available
Text: 2SD2012 ® NPN SILICON POWER TRANSISTOR I I I HIGH DC CURRENT GAIN LOW SATURATION , PURPOSE SWITCHING I DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO , ) V CB = 60 V 100 µA I EBO Emitter Cut-off Current (I C = 0) V EB = 7 V 100 µA , Transition frequency V CE = 5 V Collector-Base Capacitance V CB = 10 V fT C CBO 2/5 0.4 , Dia 4/5 3.30 3.08 0.130 3.28 0.121 0.129 2SD2012 Information furnished is


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PDF 2SD2012 2SD2012 O-220F O-220F
nec hf 324

Abstract: transistor NEC B 617 transistor NEC D 587 nec 2501 Le 629 341S NEC 2501 LE 737 2SC5338 transistor lc 7822 c
Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5338 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R , Order Interm odu ration Distortion Symbol ICBO I ebo V cb V eb = 2SC5338 Test Conditions 2 0 V , NF im 2 Vce Vce V cb V ce V ce = 5 V, lc 5 V, lc = 50 mAN ote2 50 mA = 50 6.0 , - Bese to Emitter Voltage - V hFE - lc Characteristics Cob - V cb C haracteristics hFE- D C Current Gain J CE = 10 V >Vr 0.1 1 10 100 1000 V cb lc -


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PDF 2SC5338 2SC5338 2SC4703 nec hf 324 transistor NEC B 617 transistor NEC D 587 nec 2501 Le 629 341S NEC 2501 LE 737 transistor lc 7822 c
Not Available

Abstract: No abstract text available
Text: TRANSISTOR N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast , €¢ gold-metallization ensures excellent reliability. The transistor has a Z )n 6-lead flange envelope with a ceramic , sparingly and evenly distributed. 308 August 1986 r b'lE t > N AMER PHILIPS/DISCRETE m bb53^3i oo a a 'isi a m IAPX BLV25 V.H.F. power transistor RATINGS Limiting values in , ; V CB = 25 V — IE = 20 A; V c b = 2 5 V typ. typ. 50 15 to 100 1,6 V typ. typ


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PDF BLV25
2000 - A64 marking amplifier

Abstract: MMIC A64 marking RF TRANSISTOR 1.5 GHZ A64 TRANSISTOR A64 marking A64 amplifier SGA-6489 MMIC RF 1.5 GHZ A64 transistor tl 187 RF TRANSISTOR A64
Text: Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high , 29.4 30.8 24.7 14.4 12.5 10.8 ORL Output Return Loss dB 18.2 15.8 20.6 , Frequency (Mhz) Reference Designator 1 uF 1000 pF 500 850 1950 2400 3500 CB , 68 nH 33 nH 22 nH 18 nH 15 nH CD LC 4 1 SGA-6489 3 RF in RF out CB 2 CB Recommended Bias Resistor Values for Id=75mA Supply Voltage(VS) RBIAS 7.5 V 8V 33


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PDF SGA-6489 SGA-6489 DC-3500 EDS-100621 A64 marking amplifier MMIC A64 marking RF TRANSISTOR 1.5 GHZ A64 TRANSISTOR A64 marking A64 amplifier MMIC RF 1.5 GHZ A64 transistor tl 187 RF TRANSISTOR A64
TE1300

Abstract: Sprague 1C10C0G102J050B HY550 5HKP10 SPRAGUE 5GAP10 5GAP10
Text: 3.49 3.32 3.08 2.88 926-0187 TVA1310.1 50 120 7 /16 ¥ 1 9 /32 1.25 1.10 1.07 .99 .91 926-0306 , 1.10 1.07 .99 .91 926-0308 TVA1906 500 20 7 /8 ¥ 2 1 /8 3.64 3.25 3.08 2.86 2.67 926-0191 TVA1312 , , Performance Characteristics, Shelf Life, Construction, With Either Transistor or Modified Electron-Tube , Long Battery Life When Used in Battery Bypass Applications 926-0334 TE1207 25 CB 1.76 1.28 1.09 , TE1300 1 BA 1.63 1.15 .98 BA 0.260 0.536 CC 0.322 0.848 926-0350 TE1304.2 15 CB 1.82 1.30 1.09 BB 0.260


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PDF TST10 TSD10 TGS10 TGS50 TGP10 5TSD10 926-322um TE1207 TE1209 TE1211 TE1300 Sprague 1C10C0G102J050B HY550 5HKP10 SPRAGUE 5GAP10 5GAP10
SP8735B

Abstract: SP8630B SP8690A
Text: ±2) 28 ty p e No. Description SL1613 SL523B/C/ CB *# Dual successive deieclio i I3L531 , ) 126 4 Input Noise Voltage ; Page : Matched Transistor Arrays Type No LV CEO Mfn Typ , performance transistor arrays 6V 9V 12mA 5.0GHz 6 20 at 8mA 58 SL2365 Very high performance transistor array 6V 9V 8mA 5.0GHz 8 50 at 8mA 60 SL3145 NPN transistor arrays 15V 25V 20mA 1.6GHz 5 40 at 1 mA 75 SLS227 NPN transistor arrays 6V


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PDF SL3522 600MHz 80MHz 8L1615 5L2524A# 300MHz SL2524B/C# 1000MHz SL521A/B/C# SP8735B SP8630B SP8690A
1997 - BF 494 C

Abstract: ic sc 6200 AT-38043-TR1 transistor 2222a data sheet 5-04P SOT c5 87 L 146 CB AT-38043-BLK AT-38043-TR2 AT-38043
Text: NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features · Operates , Hewlett Packard's AT-38043 is a low cost, NPN silicon bipolar junction transistor housed in a miniature , Lb R = Rb L = La C = Cb C = Cb E1 L = La C = Ca Label Value 0.1 Ra 0.2 Rb 0.85 nH La 0.25 nH Lb 0.01 pF Ca 0.01 pF Cb R = Ra C = Ca C B R = Ra 10 , MJE RB RE RC 1 E2 L = Lb R = Rb L = Lb R = Rb C = Cb L = La C = Cb E R =


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PDF AT-38043 OT-343 SC-70) AT-38043 5966-1275E BF 494 C ic sc 6200 AT-38043-TR1 transistor 2222a data sheet 5-04P SOT c5 87 L 146 CB AT-38043-BLK AT-38043-TR2
2009 - SD500H-48

Abstract: SD-500H-12 SD-500L-12 SD500
Text: (DC) 30.8 ~35.2Volts(DC) 62~68Volts(DC) 16~19Volts(DC) 30.8 ~35.2Volts(DC) 62~68Volts(DC , Efficiency Isolation EMS (Note 4) series GENERAL SPECIFICATIONS IEC60950-1 CB approved by TUV 100M , heatsink of power transistor 80°C±5(L-48V,H-24V,H-48V), 85°C±5(L-24V) 90°C±5(L-12V), 95°C±5 (H


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PDF SD500 2000VAC SD500L-12 SD500L-24 SD500L-48 SD500H-12 SD500H-24 SD500H-48 40Amps 21Aission-critical SD500H-48 SD-500H-12 SD-500L-12 SD500
L1201

Abstract: 2N2060J 2N2060JTX small signal transistor
Text: -195001270 . J '11 ~1. .8:6 : qo ~ Dual NPN Silicon Smal14ignal Transistor .dasignedfor genera~urpose , °C Derste above 25°C @ Tc = 25°C Derate above 25°C 540 600 3.43 2.12 12.1 3.08 1.5 8.6 mW , ,~~;~~~~~, IE = O) Y, ~:~~,~~xe Bre*down Voltage t:$flk = 100 @de, ic = O) Collector Cutoff Current ~ CB = , AND MIMAERO SMALL SIGNAL TRANSISTOR DATA *I2 nAdc q 2N2060JTX,JANS e o . COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA >13 `2N2060JTX,JANS PACWGE DIMENSIONS m3


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PDF 2N2080JWD 2N2060JTX, MIL4-195001270 Smal14ignal 1PHW4101 2N20MJTND L1201 2N2060J 2N2060JTX small signal transistor
2013 - Not Available

Abstract: No abstract text available
Text: 2N3866(A)UB Compliant NPN Silicon High-Frequency Transistor Qualified per MIL-PRF-19500/398 , transistor is military qualified up to the JANS level for high-reliability applications. It is also , Notes: 1. Derated linearly 3.08 mW/°C for T A > +25 °C MSC – Lawrence 6 Lake Street, Lawrence , DEFINITIONS Definition Symbol IB IC V BE V CB Surface Mount package Base current: The value of , 200 MHz Output Capacitance V CB = 28 V, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz 2.5 4.0 C obo


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PDF 2N3866 MIL-PRF-19500/398 O-205AD T4-LDS-0175-1,
transistor NEC D 822 P

Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R , Feed-back C apacitance Insertion Pow er Gain Noise Figure Noise Figure Sym bol ICBO I ebo hFE V cb = Veb = V ce = V ce = V cb = V ce = V ce = V ce = T e st Conditions M IN . TYP. MAX. Unit /xA , perature - 'C V cb - Collector to Base Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENT V ce = 1 , .378 .317 . 308 .299 .297 .288 .274 .261 .255 .260 .243 .239 .245 .216 .235 .243 .233 .242 .249 .260


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PDF 2SC5336 2SC3357 transistor NEC D 822 P transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
1999 - ic sc 6200

Abstract: transistor 2222a data sheet AT-38043 AT-38043-BLK AT-38043-TR1 AT-38043-TR2 at38043blk 38043 sc 6200 ic diagram
Text: NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features · Operates , Agilent's AT-38043 is a low cost, NPN silicon bipolar junction transistor housed in a miniature SC , B L = La C = Ca C L = Lb R = Rb L = La C = Cb C = Cb E1 L = La C = Ca Label Value Ra 0.1 Rb 0.2 La 0.85 nH Lb 0.25 nH Ca 0.01 pF Cb 0.01 pF R = Ra C = Ca , ). Packaged Model R = Ra 9 Vcb (V) E2 L = Lb R = Rb L = Lb R = Rb C = Cb L


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PDF AT-38043 OT-343 SC-70) AT-38043 5966-1275E ic sc 6200 transistor 2222a data sheet AT-38043-BLK AT-38043-TR1 AT-38043-TR2 at38043blk 38043 sc 6200 ic diagram
SL6 TRANSISTOR

Abstract: No abstract text available
Text: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features · High gain bandwidth product fT= 13.5 GHz typ · High gain, low noise figure PG = 18 dB typ. NF = , conditions lc = 10 [lA, lE= 0 = 12 V, lE= 0 ^CBO ^CEO V Cb VC E = 9 V, Rbe = _ VE B= 1.5 V, lc = 0 , transistor . HITACHI 2 2SC5080 S Parameter (VOE= 5 V, Ic = 5 mA, Z0 = 50 Q.) Freq. (MHz) 200 400 600 , ANG. - 30.8 -60.8 - 83.0 -99.9 -114.5 -128.2 -139.6 -150.2 -160.5 -168.3 S21 MAG. 11.47 9.88 8.35 7.03


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PDF 2SC5080 D-85622 SL6 TRANSISTOR
2006 - SBA-5086Z

Abstract: SBA-5086
Text: -86 Product Description RFMD's SBA5086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor , 1950MHz 17.2 34.0 19.5 13.0 19.0 23 4.4 2400MHz 15.8 33.7 18.7 12.9 19 23 - 3500MHz 13.7 30.8 , sales-support@rfmd.com. 3 of 6 SBA5086Z Basic Application Circuit VS R BIAS 1 uF 1000 pF CD LC RF in CB 1 4 SBA5086Z 3 CB RF out 2 Evaluation Board Layout VS RBIAS 1 uF 1000 pF LC CD CB BA4 CB Mounting Instructions: 1. Use a large ground pad area under device pins 2 and 4


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PDF SBA5086Z OT-86 SBA5086Z SBA5086ZSQ SBA5086ZSR SBA5086ZPCK1 850MHz, SBA-5086Z SBA-5086
2006 - Not Available

Abstract: No abstract text available
Text: Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology , dBm 36.4 36.2 36.9 34.0 33.7 30.8 Output Power at 1dB Compression dBm 19.8 , CB 2 CB Evaluation Board Layout VS 1 uF RBIAS BA4 CB LC 1000 pF CD CB , Reference Designator 500MHz 850MHz 1950MHz 2400MHz 3500MHz 39pF CB 220pF 100pF


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PDF SBA5086Z OT-86 SBA5086Z SBA5086ZSQ SBA5086ZPCK1 SBA5086ZSR 850MHz,
equivalent sd 48 41

Abstract: SD-1000 1000W boost converter 12v to 36 v dc dc converter circuit diagram
Text: . Re-power on to recover 16 ~ 19V 30.8 ~ 35.2V 62 ~ 68V 16 ~ 19V 30.8 ~ 35.2V 62 ~ 68V , transistor 85 5 (TSW2 ) detect on heatsink of O/P diode; 75 OVER TEMPERATURE Protection type : Shut down , ~ 50 ) 10 ~ 500Hz, 2G 10min./1cycle, 60min. each along X, Y, Z axes IEC60950-1 CB approved by TUV I


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PDF SD-1000 2000VAC SD-1000L SD-1000L-12 SD-1000L-24 SD-1000L-48 SD-1000H-12 SD-1000H-24 SD-1000H-48 SVR51 equivalent sd 48 41 SD-1000 1000W boost converter 12v to 36 v dc dc converter circuit diagram
SD-500H-12

Abstract: SD-500 SD-500L-12 SD-500L-24 L-48V SD500H-48 500w 12v circuit diagram
Text: ., re-power on to recover 30.8 ~ 35.2V 62 ~ 68V 16 ~ 19V Protection type : Shut down o/p voltage, re-power on to recover 80 5 (TSW1 ) detect on heatsink of power transistor 16 ~ 19V 30.8 ~ 35.2V 62 , , Y, Z axes IEC60950-1 CB approved by TUV (Note 4) OTHERS , 10 ~ 95% RH I/P-O/P:2KVAC


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PDF SD-500 72VDC, 144VDC) 2000VAC SD-500L-12 SD-500L-24 SD-500L-48 SD-500H-12 SD-500H-24 SD-500H-48 SD-500H-12 SD-500 SD-500L-12 SD-500L-24 L-48V SD500H-48 500w 12v circuit diagram
Not Available

Abstract: No abstract text available
Text: . Re-power on to recover 16 ~ 19V 30.8 ~ 35.2V 62 ~ 68V 16 ~ 19V 30.8 ~ 35.2V 62 ~ 68V 88% 90% 85% 11.6A , ) detect on heatsink of power transistor 85 5 (TSW2 ) detect on heatsink of O/P diode; 75 OVER TEMPERATURE , -1 CB approved by TUV I/P-O/P:2KVAC I/P-FG:1.5KVAC O/P-FG:0.5KVAC I/P-O/P, I/P-FG, O/P-FG:100M Ohms


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PDF SD-1000 2000VAC SD-1000L-12 SVR51 SVR51 SD-1000-SPEC
Not Available

Abstract: No abstract text available
Text: ., re-power on to recover 30.8 ~ 35.2V 62 ~ 68V 16 ~ 19V Protection type : Shut down o/p voltage, re-power on to recover 80 5 (TSW1 ) detect on heatsink of power transistor 16 ~ 19V 30.8 ~ 35.2V 62 , . each along X, Y, Z axes IEC60950-1 CB approved by TUV EMC IMMUNITY MTBF OTHERS DIMENSION


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PDF SD-500 72VDC, 144VDC) 2000VAC SD-500L-24 SD-500L-48 SD-500H-12 SD-500H-24 SD-500H-48 SD-500-SPEC
500W dc/dc converter pwm

Abstract: sphd-002t-p0.5 500W dc/dc converter SPHD 001T PO.5 SD-500L-24 SD-500L-12 SD-500H-12 SD-500 500w 12v circuit diagram 500W TRANSISTOR
Text: ., re-power on to recover 30.8 ~ 35.2V 62 ~ 68V 16 ~ 19V Protection type : Shut down o/p voltage, re-power on to recover 80 5 (TSW1 ) detect on heatsink of power transistor 16 ~ 19V 30.8 ~ 35.2V 62 , , Y, Z axes IEC60950-1 CB approved by TUV (Note 4) OTHERS , 10 ~ 95% RH I/P-O/P:2KVAC


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PDF SD-500 72VDC, 144VDC) 2000VAC SD-500L-12 SD-500L-24 SD-500L-48 SD-500H-12 SD-500H-24 SD-500H-48 500W dc/dc converter pwm sphd-002t-p0.5 500W dc/dc converter SPHD 001T PO.5 SD-500L-24 SD-500L-12 SD-500H-12 SD-500 500w 12v circuit diagram 500W TRANSISTOR
1000W boost converter

Abstract: DIAGRAM in 12v 1000w sd-1000l-24 SD-1000 1000W TRANSISTOR dc to dc converter 12v to 19v
Text: ~ 19V 30.8 ~ 35.2V 62 ~ 68V 16 ~ 19V 30.8 ~ 35.2V 62 ~ 68V Protection type : Shut down o/p voltage, re-power on to recover 5 (TSW1 ) detect on heatsink of power transistor 85 5 (TSW2 , 10min./1cycle, 60min. each along X, Y, Z axes IEC60950-1 CB approved by TUV I/P-O/P:2KVAC I/P-FG


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PDF SD-1000 2000VAC SD-1000L-12 SD-1000L-24 SD-1000L-48 SD-1000H-12 SD-1000H-24 SD-1000H-48 720ing SVR51 1000W boost converter DIAGRAM in 12v 1000w sd-1000l-24 SD-1000 1000W TRANSISTOR dc to dc converter 12v to 19v
AVANTEK transistor

Abstract: No abstract text available
Text: Silicon Bipolar Transistor Avantek 70 mil Package Features • Q0Db472 • Low Noise , ance N PN silicon bipolar transistor housed in a hermetic, high reliability package. This device is , Cutoff Current: V c 8 = 8 V jiA lEBO Emitter Cutoff Current: V e b = 1 V HA C cB , AT-41470 Low Noise Silicon Bipolar Transistor Absolute Maximum R atings P a r a m e te r , -41470 Low Noise Silicon Bipolar Transistor _ Typical Scattering Parameters: Com m on


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PDF AT-41470 Q0Db472 000b474 AVANTEK transistor
500W dc/dc converter pwm

Abstract: SD-500L-24 500w 12v circuit diagram SPHD 001T PO.5 SD-500 SD-500L-12 352v SD500H-48 JST SPHD-002T-P0.5
Text: 16 ~ 19V 30.8 ~ 35.2V 62 ~ 68V Protection type : Shut down o/p voltage, re-power on to recover 80 5 (TSW1 ) detect on heatsink of power transistor 16 ~ 19V 30.8 ~ 35.2V 62 ~ 68V OVER , -1 CB approved by TUV (Note 4) OTHERS , 10 ~ 95% RH I/P-O/P:2KVAC I/P-FG:1.5KVAC O


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PDF D-63069 SD-500 72VDC, 144VDC) 2000VAC SD-500-SPEC 500W dc/dc converter pwm SD-500L-24 500w 12v circuit diagram SPHD 001T PO.5 SD-500 SD-500L-12 352v SD500H-48 JST SPHD-002T-P0.5
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