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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor C715 Datasheets Context Search

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transistor C710

Abstract: C712 transistor diode C710 transistor C715 c714 C715 diode diode c716 c714 diode IRGPC30UD2 c710
Text: bitemational ^Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features · Switching-loss rating includes all "tail" losses · HEXFREDTM soft ultrafast diodes · Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve PD - 9.1112 IRGPC30UD2 UltraFast CoPack IGBT V c es = 600V VcE(sat) ^ 3.0V @VG E = 15V, lc = 12A Description , /dt C-715 IRGPC30UD2 TOR Fig. 18a - Test Circuit for Measurement of Il m . Eon. Eoff


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PDF IRGPC30UD2 C-715 O-247AC C-716 transistor C710 C712 transistor diode C710 transistor C715 c714 C715 diode diode c716 c714 diode IRGPC30UD2 c710
C713 diode

Abstract: c714 diode
Text: International ioriRectifier PD - 9.1112 IRGPC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED™ soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VcE(sat) ^ 3.0V @VGE = 15V , /dt Fig. 17 - Typical di(reC)M/dt vs. dif/dt C-715 4Û55452 DD2G5D5 TS1 IOR


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PDF IRGPC30UD2 C-715 O-247AC C-716 002050b C713 diode c714 diode
2003 - agilent pHEMT transistor

Abstract: transistor C715 ATF-531P8 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER GaAs pHEMT Low Noise 2x2 vhf fet lna AN-1222 BCV62C ATF-54143 ATF531P83
Text: excellent thermal dissipation as well as visual evidence of solder reflow. The transistor is qualified to , is stabilized, and therefore Ids and Vds are also kept stable. Transistor Q1 is configured with , emitter voltage (VE) of transistor Q1 equal to Vds, this circuit regulates the drain current similar to , Chip Capacitor C3, C7=15 pF Chip Capacitor C4, C5=0.1 µF Chip Capacitor C6=1 µF Chip , point (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice


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PDF ATF-531P8 ATF-531P8 5988-9545EN agilent pHEMT transistor transistor C715 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER GaAs pHEMT Low Noise 2x2 vhf fet lna AN-1222 BCV62C ATF-54143 ATF531P83
2006 - transistor C715

Abstract: ATF-531P8 ATF531 AN-1222 ATF531P83 ATF-54143 BCV62C fet curtice mesfet fet
Text: evidence of solder reflow. The transistor is qualified to the moisture sensitive level one (MSL , is stabilized, and therefore Ids and Vds are also kept stable. Transistor Q1 is configured with , emitter voltage (VE) of transistor Q1 equal to Vds, this circuit regulates the drain current similar to , C3, C7=15 pF Chip Capacitor C4, C5=0.1 µF Chip Capacitor C6=1 µF Chip Capacitor C8 , (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice[3].


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PDF ATF-531P8 AN-1281: ATF-54143 5988-9545EN transistor C715 ATF531 AN-1222 ATF531P83 BCV62C fet curtice mesfet fet
1996 - transistor C711

Abstract: C709 diode transistor C710 C711 TRANSISTOR diode C710 transistor C713 c709 transistor DIODE C709 transistor C715 C712 transistor
Text: Previous Datasheet Index Next Data Sheet PD - 9.1112 IRGPC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V · Switching-loss rating includes all "tail" losses TM · HEXFRED soft ultrafast diodes · Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 3.0V G @VGE = , . dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-715 To Order Previous Datasheet


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PDF IRGPC30UD2 O-247AC C-716 transistor C711 C709 diode transistor C710 C711 TRANSISTOR diode C710 transistor C713 c709 transistor DIODE C709 transistor C715 C712 transistor
1-450-358-11

Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
Text: side which enables seeing. · Indication of transistor . C Q B E Note: The components identified , INDUCTOR 10uH < TRANSISTOR > Q201 Q202 Q218 Q219 8-729-900-63 8-729-900-36 8-729-119-76 8-729-900-36 TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR DTA124ES DTC124ES 2SA1175-HFE DTC124ES , % 5% 50V 16V 50V 50V 50V C710 C711 C715 C718 C720 1-124-252-00 1-136-159-00 , . Description Remark Q760 Q761 Q850 8-729-202-67 FET 2SK246-GR3 8-729-141-30 TRANSISTOR 2SC3623A


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PDF TA-VE150 RM-U150) 1-450-358-11 SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
2002 - transistor r1012

Abstract: npn smd 2n2222 smd 2DG12 SMD d2b SMD D8B 2n2222 smd DG1 smd transistor SMD diode C715 AN7852 C2559
Text: % variation. This op amp then drives an emitter follower configured transistor Q1. If an offset is not , , VIN1-2 R1-2 R3 R4 C1-4, C7-15 C17 R40-41 R20-22 R9, R16,R31-33 R37-39, R42-44 R23-26 R29 R17 , Digi-Key National Digi-Key See Assembly note 1 EBC TO18 NPN Small Signal Transistor Transciever With


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PDF AN7852 10-Bit SPT7852 10-bit transistor r1012 npn smd 2n2222 smd 2DG12 SMD d2b SMD D8B 2n2222 smd DG1 smd transistor SMD diode C715 AN7852 C2559
2006 - pin configuration NPN transistor c458

Abstract: d331 npn transistor transistor C458 D331 transistor D330 NPN transistor d331 npn transistor pin configuration smd diode D450 c458 NPN transistor transistor D450 smd diode D451
Text: 5 2 C709 100nF C711 220uF GND C713 1nF C715 1nF 2 OUT_R OUT_GND


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PDF SLEA055 TAS5508-5142K7EVM TAS5508BPAG TAS5142DKD, 32-bit 24-bit 48-bit TIC-HSINK-015 pin configuration NPN transistor c458 d331 npn transistor transistor C458 D331 transistor D330 NPN transistor d331 npn transistor pin configuration smd diode D450 c458 NPN transistor transistor D450 smd diode D451
2006 - transistor C458

Abstract: d331 npn transistor pin configuration d331 npn transistor pin configuration NPN transistor c458 C458 datasheet c337 pnp transistor D331 PNP c458 NPN transistor smd diode D451 capacitor 100nf 50v 0805 datasheet
Text: JUNE 2006 Submit Documentation Feedback GND 2 5 2 C714 1nF C713 1nF C715 1nF


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PDF SLEA061 TAS5518-5152K8EVM TAS5518PAG TAS5152DKD, 32-bit 24-bit 48-bit transistor C458 d331 npn transistor pin configuration d331 npn transistor pin configuration NPN transistor c458 C458 datasheet c337 pnp transistor D331 PNP c458 NPN transistor smd diode D451 capacitor 100nf 50v 0805 datasheet
2004 - R747 diode

Abstract: lm339 pwm mosfet diode C725 transistor C711 C711 TRANSISTOR C745 TRANSISTOR R747 C756 TRANSISTOR C784 transistor BC717
Text: decrease efficiency, this resistor must be connected through a switch or a transistor . The bleeder , 0 R752 5k6 100k 12 VIN-RTN C715 47u R709 100k V+ C716 100n + LM339


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PDF SLEA038 R747 diode lm339 pwm mosfet diode C725 transistor C711 C711 TRANSISTOR C745 TRANSISTOR R747 C756 TRANSISTOR C784 transistor BC717
2007 - C709 diode

Abstract: R719 R727 diode transistor C711 R707 R728 diode DIODE C709 C712 ST STR912FAW44X6 marking P97 transistor
Text: 10K R723 3V3 1 2 DEF=1 3 10K C715 10nF MF3 MF2 10K R726 3V3 1 2 DEF=3 3 , : BC846A or compatible T1,T2 SOT23-3 NPN universal transistor 1-Base, 2-Emitter, 3


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PDF UM0282 STEVAL-IFD001V1 STEVAL-IFD001V2 STEVAL-IFD001V2) C709 diode R719 R727 diode transistor C711 R707 R728 diode DIODE C709 C712 ST STR912FAW44X6 marking P97 transistor
2008 - transistor C711

Abstract: r707 C706 diode 3V3 -ZENER DIODE R719 transistor C710 C709 diode C711 TRANSISTOR R721-R725 marking P55 transistor
Text: 10K R723 3V3 1 2 DEF=1 3 10K C715 10nF MF3 MF2 10K R726 3V3 1 2 DEF=3 3 , universal transistor 1-Base, 2-Emitter, 3-Collector 16/21 UM0282 STR9 dongle Table 12


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PDF UM0282 STEVAL-IFD001V1 STEVAL-IFD001V1) transistor C711 r707 C706 diode 3V3 -ZENER DIODE R719 transistor C710 C709 diode C711 TRANSISTOR R721-R725 marking P55 transistor
NEC Tokin oe 907

Abstract: inverter nec tokin Tablet PC R116 schematic MITSUBISHI E100 nec tokin oe 128 CN702 motorola transistor R711 DFHM9007ZA CPD0307024C1 toshiba l850
Text: No file text available


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PDF CPD0307024C1 CF-18 CF-18BHKZXDM BLM21P600SG CF-18 SW955 EVQPLDA15 SW954 NEC Tokin oe 907 inverter nec tokin Tablet PC R116 schematic MITSUBISHI E100 nec tokin oe 128 CN702 motorola transistor R711 DFHM9007ZA CPD0307024C1 toshiba l850
CIRCUIT DIAGRAM foxconn g31

Abstract: HS8108 BGA-701 foxconn circuit diagram hnv samsung NVIDIA schematics AL499 foxconn schematics foxconn foxconn g31
Text: 1 1 1 L42 1 10UH 2 2 +V1.5S_DPLLB B + C715 Place 470U/2V_7343/470U/2.5V_7343 Caps


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PDF CK-410M) NV44M) NV44M RN-050033 RN-050033 CIRCUIT DIAGRAM foxconn g31 HS8108 BGA-701 foxconn circuit diagram hnv samsung NVIDIA schematics AL499 foxconn schematics foxconn foxconn g31
1999 - TV horizontal Deflection Systems

Abstract: TRANSISTOR REPLACEMENT GUIDE an363 TV horizontal Deflection Systems 25 transistor horizontal section tv Horizontal Deflection Switching Transistors TV horizontal Deflection Systems mosfet horizontal section in crt television CRT TV electron gun TV flyback transformer
Text: of the paper is an introduction to the operation of the deflection transistor . The switching times , transistor technologies. The various options that a power transistor designer has are outlined. The transistor characteristics are divided into three areas: (i) edge termination, (ii) the emitter layout and , are mentioned in brief. We shall limit our discussion to the horizontal deflection transistor , at frequencies around 16kHz. The current requirements of the transistor switch varied between 2A


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PDF 16kHz 32kHz, 64kHz, 100kHz. TV horizontal Deflection Systems TRANSISTOR REPLACEMENT GUIDE an363 TV horizontal Deflection Systems 25 transistor horizontal section tv Horizontal Deflection Switching Transistors TV horizontal Deflection Systems mosfet horizontal section in crt television CRT TV electron gun TV flyback transformer
1999 - ADM6315-31D4ARTZR7

Abstract: ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor
Text: STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown , -40°C to +125°C -40°C to +125°C Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 ADM6315 D00081-0-12/11 ADM6315-31D4ARTZR7 ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor
2006 - transistor C 2240

Abstract: ADM6315-44D2ARTZR71 ADM6315-29D2ARTZR71 308 transistor sot143
Text: -Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown in millimeters ORDERING GUIDE , Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 ADM6315 C00081-0-4/06 transistor C 2240 ADM6315-44D2ARTZR71 ADM6315-29D2ARTZR71 308 transistor sot143
1999 - TO-253-AA

Abstract: Small-outline integrated circuit SOT 143 46d1 transistor 143 MDV 1-2 kv SOT-143 308 transistor sot143 ADM6315-46D1ARTRL7 transistor C 2240
Text: JEDEC STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA , 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 OT-143 D00081-0-9/07 TO-253-AA Small-outline integrated circuit SOT 143 46d1 transistor 143 MDV 1-2 kv SOT-143 308 transistor sot143 ADM6315-46D1ARTRL7 transistor C 2240
1999 - Not Available

Abstract: No abstract text available
Text: TO JEDEC STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA , -Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4


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PDF OT-143 ADM6315 ADM811 OT-143 D00081-0-12/11
YG6260

Abstract: YG-6260 toshiba TO-3P AC701
Text: Transistor U tilization Precautions When semiconductors are being used, caution must be exercised , heat sink and minimize transistor stress. (1) Silicone grease A thin, even layer of silicone grease should be applied between the transistor and heat sink to improve thermal resistance. Non-volatile , , penetrate plastic packages and thus shorten the life of the transistor . The base oil of Toshiba Silicone Grease YG6260 does not easily separate and thus does not adversely affect the life of transistor . This


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1999 - transistor TO Outline Dimensions

Abstract: transistor d 140 g
Text: -253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown in millimeters , -40°C to +125°C Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4


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PDF OT-143 ADM6315 ADM811 ADM6315 D00081-0-9/13 transistor TO Outline Dimensions transistor d 140 g
2001 - "Phase Discriminator"

Abstract: AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study
Text: power microwave transistor . RF power, phase and DC parameters are measured and recorded. Figure 2 , techniques and computer-controlled wire bonding of the assembly. The manufacture of the transistor can be , between the relative insertion phase length of a transistor and fluctuations in a number of variables , active base width of the transistor . - Emitter Ballast Resistance: Sheet resistance of the doped , transistor dice (as many as six single-packaged transistor ) and the accompanying matched MOS capacitors


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PDF AN569 "Phase Discriminator" AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study
1999 - TV horizontal Deflection Systems mosfet

Abstract: flyback smps planar TRANSISTOR REPLACEMENT GUIDE dtv32f15 an363 electron gun CRT transistor de 1200v 5a horizontal transistor CRT TV electron gun DTV32F1500A
Text: of the paper is an introduction to the operation of the deflection transistor . The switching times , transistor technologies. The various options that a power transistor designer has are outlined. The transistor characteristics are divided into three areas: (i) edge termination, (ii) the emitter layout and , are mentioned in brief. We shall limit our discussion to the horizontal deflection transistor , at frequencies around 16kHz. The current requirements of the transistor switch varied between 2A


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PDF 16kHz 32kHz, 64kHz, 100kHz. TV horizontal Deflection Systems mosfet flyback smps planar TRANSISTOR REPLACEMENT GUIDE dtv32f15 an363 electron gun CRT transistor de 1200v 5a horizontal transistor CRT TV electron gun DTV32F1500A
bonitron

Abstract: m3775rk M3575T transistor product line manuals VFD for motors resistor bank braking in ac motors vfd motor Application Manual Power Modules "variable frequency drive" circuit
Text: M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · M3775RK Resistive , Modules · M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · M3775RK , · M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · M3775RK , Braking Modules · M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · , 67hp / 50kW and Above Braking Modules · M3452 Heavy Duty Braking Transistor · M3575T Standard


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2008 - w32 transistor

Abstract: w41 transistor w33 transistor transistor w32 transistor p31 transistor k33 34 ic 4559 transistor 4559 455a transistor k33
Text: Pull-up transistor control bit PU02 Pull-up transistor control bit PU01 Pull-up transistor control bit PU00 Pull-up transistor control bit PU12 Pull-up transistor control bit PU11 Pull-up transistor control bit PU10 Pull-up transistor control bit PU22 Pull-up transistor control bit PU21 Pull-up transistor control bit PU20 Pull-up transistor control bit REC05B0047-0200/Rev.2.00 455A Group at , retained 00002 P23 pull-up transistor OFF P23 pull-up transistor ON P22 pull-up transistor OFF P22


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PDF M3455AG8FP M3455AG8-XXXFP) M34559G6FP M34559G6-XXXFP) M3455AGCFP M3455AGC-XXXFP) REC05B0047-0200/Rev w32 transistor w41 transistor w33 transistor transistor w32 transistor p31 transistor k33 34 ic 4559 transistor 4559 455a transistor k33
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