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transistor C 639 W Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor BC 236

Abstract: bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
Text: 125 ° C Collector-base breakdown voltage B C 635 BC 637 BC 639 T1.2/508.0888 E B C 637 60 1 1.5 1 150 5 5 .+ 150 BC 639 80 V A A ·a W ° C ° C 45 ^ C M P .o , T\ ^thJA 156 125 55 Min , C 639 Emitter-base breakdown voltage /E= 1 (jA . Collector saturation voltage /0 = 500 mA, /B = 50 , 637, BC 639 hK matched pair ratio VCE«=1 V,/ c =1Q0mA Gain bandwidth product Vce = 5 V, lc = 50 mA, f , 000^30^ AL GG BC 635 · BC 637 · BC 639 r - a i -33 Silicon NPN Epitaxial Planar Transistors


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PDF BC635 15A3DIN transistor BC 236 bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
2001 - BC635 ECB

Abstract: BC638
Text: -1.5 -100 1 150 -65 ~ 150 V V V V A A mA W ° C ° C -45 -60 -100 V V V Value -45 -60 -100 Units V V V VCES Electrical Characteristics Ta=25° C unless otherwise noted Symbol BVCEO Parameter , BC636/638/640 BC636/638/640 Switching and Amplifier Applications · Complement to BC635/637/ 639 1 TO-92 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise noted Symbol VCER Parameter Collector-Emitter Voltage at RBE=1K : BC636


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PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC635 ECB BC638
2002 - NPN transistor ECB TO-92

Abstract: Bc637 BC635 ECB transistor C 639 W transistor BC637 complement
Text: 1 150 -65 ~ 150 V V V V A A mA W ° C ° C 45 60 100 V V V Value 45 60 100 Units V V V VCES · PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25° C unless otherwise noted Symbol BVCEO Parameter , BC635/637/ 639 BC635/637/ 639 Switching and Amplifier Applications · Complement to BC636/638/640 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise noted Symbol VCER Parameter Collector-Emitter Voltage at RBE=1K : BC635


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 NPN transistor ECB TO-92 Bc637 BC635 ECB transistor C 639 W transistor BC637 complement
2002 - bc639

Abstract: 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild
Text: 1 150 -65 ~ 150 V V V V A A mA W ° C ° C 45 60 100 V V V Value 45 60 100 Units V V V VCES · PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25° C unless otherwise noted Symbol BVCEO Parameter , BC635/637/ 639 BC635/637/ 639 Switching and Amplifier Applications · Complement to BC636/638/640 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise noted Symbol VCER Parameter Collector-Emitter Voltage at RBE=1K : BC635


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild
2002 - bc635

Abstract: transistor C 639 W
Text: 1 150 -65 ~ 150 V V V V A A mA W ° C ° C 45 60 100 V V V Value 45 60 100 Units V V V VCES · PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25° C unless otherwise noted Symbol BVCEO Parameter , BC635/637/ 639 BC635/637/ 639 Switching and Amplifier Applications · Complement to BC636/638/640 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise noted Symbol VCER Parameter Collector-Emitter Voltage at RBE=1K : BC635


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc635 transistor C 639 W
GSI510

Abstract: transistor C 639 W IGT5E10CS Bipolar Transistors
Text: . 75- W Derate Above 25° C . 0.6- W /° C OPERATING AND STORAGE JUNCTION TEMPERATURE RANGE. Tj, -55 to , on/oft m High current handling -10 A @ 100° C case a Current sensing pilot TERMINAL DIAGRAM s ek 92GS-44006R1 The GSI510 and/or IGT5E10CS Series IGT" Transistor (Insulated Gate Bipolar Transistor ) is a , characteristics of the IGT™ Transistor are also similar to power MOSFETs. An important difference is the


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PDF GSI510 1GT5E10CS 92GS-44006R1 IGT5E10CS GSI510, IGT5E10CS transistor C 639 W Bipolar Transistors
Not Available

Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB High Current Transistor , PD BC637 BC638 60 60 5.0 1.0 800 6.4 1.0 2.75 22 UNIT V V V A mW mW/ºC W W mW/ºC Tj, Tstg - 55 to +150 ºC Rth (j-c) Rth (j-a) 45 156 ºC/ W ºC/ W *Rth (j-a) 125 ºC/ W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION


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PDF BC635, BC636, 640Rev 030106E C-120
1999 - bc736

Abstract: transistor C 639 W bc639 BC635 BC637
Text: BC635/637/ 639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 · Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS (TA=25° C ) ° Characteristic Collector , BC635/637/ 639 NPN EPITAXIAL SILICON TRANSISTOR TRADEMARKS The following are registered and , 80 5 1 1.5 100 1 150 -65 ~ 150 VCER Rating V V V V V V V V V V A A mA W ° C ° C 1. Emitter 2. Collector 3. Base · PW=5ms, Duty Cycle=10% ELECTRICAL CHARACTERISTICS


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PDF BC635/637/639 BC635/638/640 BC635 BC637 BC639 bc736 transistor C 639 W bc639 BC635 BC637
2006 - Not Available

Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB High Current Transistor , PD BC637 BC638 60 60 5.0 1.0 800 6.4 1.0 2.75 22 UNIT V V V A mW mW/ºC W W mW/ºC Tj, Tstg - 55 to +150 ºC Rth (j-c) Rth (j-a) 45 156 ºC/ W ºC/ W *Rth (j-a) 125 ºC/ W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION


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PDF BC635, BC636, 640Rev 180712E C-120
2006 - 639 TRANSISTOR PNP

Abstract: 638 transistor bc636 npn transistor bc640 transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 transistor bC640 OF CDIL BC636 BC639
Text: SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB High Current Transistor , BC637 BC638 60 60 5.0 1.0 800 6.4 1.0 2.75 22 UNIT V V V A mW mW/ºC W W mW/ºC Tj, Tstg - 55 to +150 ºC Rth (j-c) Rth (j-a) 45 156 ºC/ W ºC/ W *Rth (j-a) 125 ºC/ W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST


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PDF BC635, BC636, C-120 BC640Rev 030106E 639 TRANSISTOR PNP 638 transistor bc636 npn transistor bc640 transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 transistor bC640 OF CDIL BC636 BC639
NPN Silicon Epitaxial Planar Transistor to92

Abstract: BC639-BC640 Transistor BC637 or BC639 BC638 BC639 BC637 transistor C 639 W Transistor S 637 T transistor bC640 OF CDIL 639 TRANSISTOR PNP
Text: SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB High Current Transistor , BC637 BC638 60 60 5.0 1.0 800 6.4 1.0 2.75 22 UNIT V V V A mW mW/ºC W W mW/ºC Tj, Tstg - 55 to +150 ºC Rth (j-c) Rth (j-a) 45 156 ºC/ W ºC/ W *Rth (j-a) 125 ºC/ W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST


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PDF BC635, BC636, 640Rev 030106E C-120 NPN Silicon Epitaxial Planar Transistor to92 BC639-BC640 Transistor BC637 or BC639 BC638 BC639 BC637 transistor C 639 W Transistor S 637 T transistor bC640 OF CDIL 639 TRANSISTOR PNP
2002 - transistor C 639 W

Abstract: No abstract text available
Text: 1 150 -65 ~ 150 V V V V A A mA W ° C ° C 45 60 100 V V V Value 45 60 100 Units V V V VCES · PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25° C unless otherwise noted Symbol BVCEO Parameter , BC635/637/ 639 BC635/637/ 639 Switching and Amplifier Applications · Complement to BC636/638/640 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise noted Symbol VCER Parameter Collector-Emitter Voltage at RBE=1K : BC635


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 transistor C 639 W
2002 - NL6448BC26-03

Abstract: transistor C 639 W
Text: (638,479) 0) 1) C ( 639 , C ( 639 , · ··· · C ( 639 , Y) · · · C ( 639 ,478) C ( 639 ,479) 0) 1) (2) Scanning , (0,0) D (0,0) C ( 639 ,0) D ( 639 ,0) NEC C (0,479) D (0,479) C ( 639 ,479) D ( 639 ,479) Note1 Figure 1. Normal scan (DPSR: Low or Open) C (0,0) D ( 639 ,479) C ( 639 ,0) D (0,479) C (0,479) D ( 639 ,0) Figure 2. Reverse scan (DPSR: High) Note1: Meaning of C (X, Y) and D (X, Y) C (X, Y): The , for LCD panel signal processing board DATA SHEET DOD-M-1191 (1st edition) NEC C ( 639 ,479) D (0,0


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PDF NL6448BC26-03 DOD-M-1191 NL6448BC26-03 transistor C 639 W
RGAC

Abstract: GSI525 801 LCM IGT7E20CS G2GS gee transistor R relays
Text: . . 125 _ W Derate Above 25" C . . .1 _ W /°C , , JUNCTION TO CASE.Rgac _1 _" C / W MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES , turn on/ott m High current handling -25 A @ 85° C case ■Current sensing pilot TERMINAL DIAGRAM s ek 92GS-44006R' The GSI525 and/or IGT7E20CS IGT™ Transistor (Insulated-Gate Bipolar Transistor , '" Transistor are similar to power MOSFETs but its equivalent ras(on) drain resistance is ten times lower and


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PDF GSI525, IGT7E20CS 92GS-44006R' GSI525 IGT7E20CS 92gs-44013 10-PULSE 92gs44017 RGAC 801 LCM G2GS gee transistor R relays
1994 - UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Text: 6-39 1N4751A 6-24 1N5261B 6-11 1N5334B 6-39 1N4752A 6-24 1N5262B 6-11 1N5335B 6-39 1N4753A 6-24 1N5263B 6-11 1N5336B 6-39 1N4754A 6-24 1N5264B 6-11 1N5337B 6-39 1N4755A 6-24 1N5265B 6-11 1N5338B 6-39 1N4756A 6-24 1N5266B 6-12 1N5339B 6-39 1N4757A 6-24 1N5267B 6-12 1N5340B 6-39 1N4758A 6-24 1N5268B 6-12 1N5341B 6-39 1N4759A 6-24 1N5269B 6-12 1N5342B 6-39


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PDF
1999 - RESISTOR 47 K OHM

Abstract: ic sc 4145 NL6448CC33-30 IL-Z-10S-S125C3 IL-Z-11S-S125C3 lcd driving gamma compensation RGB transmittance
Text: 25° C Notes 1, 5, 6 Gamma resistor R 3 k Max W Should not be used by "Open" Notes 1 , (Thin Film Transistor ) active matrix color liquid crystal display (LCD) comprising amorphous silicon , © NEC Electronics Inc,1999 NL6448CC33-30 STRUCTURE AND FUNCTIONS A color TFT (thin film transistor , consumption 1.0 W (TYP. at 3.3V) Note: Measuring light conditions Lamp Chromaticity coordinates , VI ­0.3 to 6.5 V Storage temp. TST ­30 to 85 ° C Note 4 TOP1 -25 to 85


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PDF NL6448CC33-30 NL6448CC33-30 RESISTOR 47 K OHM ic sc 4145 IL-Z-10S-S125C3 IL-Z-11S-S125C3 lcd driving gamma compensation RGB transmittance
2001 - bc736

Abstract: BC635 BC637 BC639
Text: Collector Power Dissipation TJ TSTG 1 W Junction Temperature 150 ° C Storage Temperature -65 ~ 150 ° C · PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25° C unless , BC635/637/ 639 BC635/637/ 639 Switching and Amplifier Applications · Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise noted Symbol VCER Units 45 60 100 V V V 45 60 100


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc736 BC635 BC637 BC639
2000 - bc736

Abstract: bc635 BC637 BC639
Text: Collector Dissipation TJ TSTG 1 W Junction Temperature 150 ° C Storage Temperature -65 ~ 150 ° C · PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25° C unless otherwise , BC635/637/ 639 BC635/637/ 639 Switching and Amplifier Applications · Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise noted Symbol VCER Units 45 60 100 V V V 45 60 100


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc736 bc635 BC637 BC639
2002 - NL6448CC33-30W

Abstract: NL6448CC33-30 C-639 NL6448CC33 IL-Z-10S-S125C3 IL-Z-13S-S125C3 transistor C 639 W
Text: C ( X, 0) ··· C (638, 0) C ( 639 , 0) C ( 0, 1) C ( 1, 1) ··· C ( X, 1) ··· C (638, 1) C ( 639 , 1) · · · · · · · ··· · · · · · ··· · · · · · ··· · C ( 0, Y) C ( 1, Y) ··· C ( X, Y) ··· C (638, Y) C ( 639 , Y , ( 1,478) ··· C ( X,478) ··· C (638,478) C ( 639 ,478) C ( 0,479) C ( 1,479) ··· C ( X,479) ··· C (638,479) C ( 639 ,479) 4.8 SCANNING DIRECTIONS The following


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PDF NL6448CC33-30W EN0527EJ3V0DS00 NL6448CC33-30W NL6448CC33-30 C-639 NL6448CC33 IL-Z-10S-S125C3 IL-Z-13S-S125C3 transistor C 639 W
2002 - Not Available

Abstract: No abstract text available
Text: BC635/637/ 639 BC635/637/ 639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise noted Symbol VCER Units 45 60 100 V V V 45 60 , Collector Power Dissipation TJ TSTG 1 W Junction Temperature 150 °C Storage Temperature -65 ~ 150 °C • PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25° C unless


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639
2000 - NL6448BC33-31D

Abstract: No abstract text available
Text: direction and viewing direction. C 2 D (0, 0) D (0, 0) D ( 639 , 0) D ( 639 , 0) C N 1 C N 1 D (0, 479) D (0, 479) D ( 639 , 479) down side view D ( 639 , 479) C N 2 up side view , NL6448BC33-31D is a TFT (thin film transistor ) active matrix color liquid crystal display( LCD) comprising , -31D STRUCTURE AND FUNCTIONS A color TFT (thin film transistor ) LCD module is comprised of a TFT liquid crystal , consumption Edge light type, two cold cathode fluorescent lamp 6.8 W (TYP., 3.3 V, with recommended


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PDF NL6448BC33-31D NL6448BC33-31D
1999 - Not Available

Abstract: No abstract text available
Text: and viewing direction C N 2 D (0, 0) D (0, 0) D ( 639 , 0) D ( 639 , 0) C N 1 C N 1 D (0, 479) D (0, 479) D ( 639 , 479) down side view D ( 639 , 479) C N 2 up side view , DESCRIPTION NL6448AC33-27G is a TFT (thin film transistor ) active matrix color liquid crystal display (LCD , FUNCTIONS A color TFT (thin film transistor ) LCD module comprises a TFT liquid crystal panel structure , Backlight Edge-light type, two cold cathode fluorescent lamps Power consumption 6.8 W (typ., 3.3 V


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PDF NL6448AC33-27G NL6448AC33-27G
GSI550

Abstract: IGT7E50CS
Text: bipolar transistors. The gate characteristics of the IGT™ Transistor are similar to power MOSFETs but its equivalent rda(on) drain resistance is ten times lower and varies only moderately between 25° C and 150° C , thus offering extended power handling capability. The IGT™ Transistor is ideal for many , on/off ■High currant handling - 50 A @ 60° C case ■Current sensing pilot The GSI550 and/or IGT7E50CS IGT*" Transistor (Insulated-Gate Bipolar Transistor ) is a MOS-Gated power-switching device


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PDF GSI550, IGT7E50CS GSI550 IGT7E50CS 60Msec 92GS-44017
2002 - BC635

Abstract: bc639 BC637
Text: Collector Power Dissipation TJ TSTG 1 W Junction Temperature 150 ° C Storage Temperature -65 ~ 150 ° C · PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25° C unless , BC635/637/ 639 BC635/637/ 639 Switching and Amplifier Applications · Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise noted Symbol VCER Units 45 60 100 V V V 45 60 100


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 BC635 bc639 BC637
1999 - "LCD timing controller"

Abstract: 104LHS31 r 639 r 640 photodetector nec 104lhs NL6448AC33 NL6448AC33-29 104PWBR1 10.4-inch lcd Color active matrix tft lcd panel NEC lcd backlight inverter
Text: ­ 2.55 ­ W Lamp turn on voltage Vs 840 ­ ­ mA Ta = 25° C 1265 ­ , D (0, 0) D (0, 0) D ( 639 , 0) D ( 639 , 0) C N 1 C N 1 D (0, 479) D (0, 479) D ( 639 , 479) D ( 639 , 479) C N 2 2. When DPS is open, or Low, the scan direction is set up by , NL6448AC33-29 is a TFT (thin film transistor ) active matrix color liquid crystal display (LCD) comprising , © 1999 NL6448AC33-29 STRUCTURE AND FUNCTIONS A color TFT (thin film transistor ) LCD module is


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PDF NL6448AC33-29 NL6448AC33-29 "LCD timing controller" 104LHS31 r 639 r 640 photodetector nec 104lhs NL6448AC33 104PWBR1 10.4-inch lcd Color active matrix tft lcd panel NEC lcd backlight inverter
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