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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

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2004 - PT 3195 rf power transistor

Abstract: 60Ghz 60GHz transistor EIC8596-8
Text: package. This amplifier features Excelics' unique MESFET transistor technology. Caution! ESD sensitive , -173.180 161.600 135.400 108.950 81.650 49.430 16.320 -16.260 - 45.080 Specifications are subject


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PDF EIC8596-8 EIC8596-8 PT 3195 rf power transistor 60Ghz 60GHz transistor
2008 - R3117

Abstract: tdb 0119 TDB 0084
Text: case of CMOS output voltage type, each drain of Nch transistor and Pch transistor is connected to the OUT pin. In the case of Nch Open drain output type, the drain of Nch transistor is connected to the , 4.4100 4.5900 4.5080 4.6920 4.6060 4.7940 4.7040 4.8960 4.8020 4.9980 4.9000 5.1000 Detector Threshold


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PDF R3117x EA-186-080328 R3117 R3117 tdb 0119 TDB 0084
2009 - XC6225

Abstract: 5l 0380 SSOT-24 A/EN132 45080
Text: reference voltage source, an error amplifier, a driver transistor , a current limiter, and a phase , 4.5080 4.5570 4.6060 4.6550 4.7040 4.7530 4.8020 4.8510 4.9000 3.0600 3.1110 3.1620 3.2130 , circuit to be turned off, is inputted via the N-channel transistor located between the VOUT pin and the , discharge via the N-channel transistor is calculated by the following formula. V= VOUT(E) ×e-t / or = lnV


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PDF XC6225 ETR0342-003 XC6225B 5l 0380 SSOT-24 A/EN132 45080
2009 - SSOT-24

Abstract: No abstract text available
Text: reference voltage source, an error amplifier, a driver transistor , a current limiter, and a phase , 4.3120 4.3610 4.4100 4.4590 4.5080 4.5570 4.6060 4.6550 4.7040 4.7530 4.8020 4.8510 4.9000 , pin, which enables the whole IC circuit to be turned off, is inputted via the N-channel transistor , RDCHG), the output voltage after discharge via the N-channel transistor is calculated by the following


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PDF XC6225 ETR0342-002 XC6225B SSOT-24
Not Available

Abstract: No abstract text available
Text: 4.2140 4.2630 4.3120 4.3610 4.4100 4.4590 4.5080 4.5570 4.6060 4.6550 4.7040 4.7530 4.8020 , transistor located between the VOUT pin and the VSS pin (cf. BLOCK DIAGRAM). The CL discharge resistance is , R), the output voltage after discharge via the N channel transistor is calculated by the following


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PDF XC6415 ETR0332-007
transistor bc 237c

Abstract: transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206
Text: O 'lb GOGTMM? T IAL66 BU 204 · BU 205 · bU ¿u6 r-2 3 ~ 0 7 Silicon NPN Power , range Maximum thermal resistance Junction case flthJC 2.5 K/W . BU 204 Vceo Kces *cav / a> 'CM ^ B M *^ BM 'W Pto. T1 BU 205 700 1500 2.5 3.0 2.5 1.5 0.1 10 115 - 6 5 .+ 1 1 5 BU 206 800 1700 V , , non repetitive: BU 204 max. 1430 V BU 205 max. 1650 V n ¡aa a ci BU 206 max. 1800 V T1.2/644.0484 El , 17E » a^SDO^b 000*1446 1 AL6G T - 3 3 - (^ Min. Typ. Max. I BU 204 · tsU 205 · BU 206


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PDF IAL66 15A3DIN transistor bc 237c transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206
g75p

Abstract: Baumer switch Transistor - NP 100 S35L Baumer electric switch 34M16 transistor bk 28
Text: features protection class IP 67 protection class IP 67 transistor output NPN / PNP protection class IP 50 transistor output NPN / PNP protection class IP 50 transistor output NPN / PNP protection class IP 67 BK +~ -~ +VS BU 2/4 3 0V output overrun 1,5 mm approx , ,5 SW 24 25 21 SW 10 * BK BU 0V PNP * 34 M16 x 0,5 M 8 x 0,5 BN , output BU +VS for connector base version add ./S35 * length with connector base S35


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PDF D250/80 H75/80 G75N80/L G75P80/L G75N/S35L G75P/S35L L75N80/L L75P80/L g75p Baumer switch Transistor - NP 100 S35L Baumer electric switch 34M16 transistor bk 28
TRANSISTOR BC 208

Abstract: transistor bc 207 npn transistor bc 209 npn transistor bc 209 b transistor Bu 208 transistor D 2588 transistor BC 209 TRANSISTOR BC 208 B transistor bc 207 3100U
Text: 0001451 1 BU 207 * BU 208 • BU 209 Silicon NPN Power Transistors Applications: Horizontal deflection , DIN 41 872 JEDEC TO 3 Weight rrtax. 20 g BU 207 600 1300 5 Base peak current 'bm Negative base peak current "'bm Flash-over voltage, non repetitive BU 207 max. 1430 V BU 208 max. 1650 V BU 209 max. 1800 V a| Flash-over current, non repetitive BU 207 max. 10 A BU 208 max. 10 A BU 209 max. 9 A TI .2/646.0888 E 2588 C-Ö7 BU 208 700 1500 5 7.5 4.0 2.5 BU 209 800 1700 4 V V A A A


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PDF r-33-07 T0126 15A3DIN TRANSISTOR BC 208 transistor bc 207 npn transistor bc 209 npn transistor bc 209 b transistor Bu 208 transistor D 2588 transistor BC 209 TRANSISTOR BC 208 B transistor bc 207 3100U
PPCP

Abstract: transistor BU 210 SS TRANSISTOR namur npn transistors,pnp transistors transistor DJ marking transistor BU 110 NPCP dj bk
Text: Sensing distance: 40 mm · Power supply: 8.2 VDC (NAMUR) 24 VDC · Output: Namur (DIN 19234) Transistor , transistor NPN, Type Housing Rated operating dist. (mm) Output type PNP or made in accordance with , Rated operating dist. (Sn) Ordering no. NAMUR Ordering no. Transistor NPN Make switching Ordering no. Transistor NPN Break switching Ordering no. Transistor PNP Make switching Ordering no. Transistor PNP Break switching Ø 77 mm 40 mm 1) DJ 40 EI 8040 NPOP EI 8040 NPCP


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PDF DJ40/EI PPCP transistor BU 210 SS TRANSISTOR namur npn transistors,pnp transistors transistor DJ marking transistor BU 110 NPCP dj bk
TIP 41 transistor

Abstract: ir transmitter receiver transistor AC Switch free transistor pnp phototransistor PVC Pipe TYPE VP ir water level sensor PT 100 sensor installation VP04E IR Proximity Sensor Switch
Text: amplifier, Ga-As diode Output: Transistor NPN/PNP or SCR, NO or NC High chemical resistance to most acids , material Ordering no. Transistor NPN Make switching VP 02 E VP 04 E Ordering no. Transistor NPN Break switching VP 01 E VP 03 E Ordering no. Transistor PNP Make switching VP 02 EP VP 04 EP Ordering no. Transistor PNP Break switching VP 01 EP VP 03 EP Polysulphone Polyamide 12 Type Selection - AC Types , Polysulphone Specifications Transistor NPN/PNP Rated operational voltage Rated operational current


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PDF VP01/03: VP02/04: VP01/02 are228/1-G VP01-. VP02-. TIP 41 transistor ir transmitter receiver transistor AC Switch free transistor pnp phototransistor PVC Pipe TYPE VP ir water level sensor PT 100 sensor installation VP04E IR Proximity Sensor Switch
TIP 41 transistor

Abstract: transistor BU 110 ir water level sensor pnp phototransistor transistor ac 176 VP04EP ir transmitter receiver VP03EP TIP 121 transistor VP01E
Text: : Transistor NPN/PNP or SCR, make or break switching · High chemical resistance to most acids and bases · , Types (Ex-approved) Housing material Ordering no. Transistor NPN Make switching Ordering no. Transistor NPN Break switching Ordering no. Transistor PNP Make switching Ordering no. Transistor , 01-230TB Specifications Transistor NPN/PNP Rated operational voltage Rated operational current , (05.11.99) 1 VP, unmodulated Specifications (cont.) Transistor NPN/PNP SCR output AC types


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PDF VP01/03: VP02/04: VP01E, VP03E VP01EP, VP03EP VP02E, VP04E VP01-. 228/1-G TIP 41 transistor transistor BU 110 ir water level sensor pnp phototransistor transistor ac 176 VP04EP ir transmitter receiver VP03EP TIP 121 transistor VP01E
TIP 41 transistor

Abstract: ir water level sensor transistor BU 110 TIP 110 transistor ir receiver transistor VP03EP VP01E optical sensor with an amplifier VP03E beam break
Text: : Transistor NPN/PNP or SCR, make or break switching · High chemical resistance to most acids and bases · , (Ex-approved) Housing material Ordering no. Transistor NPN Make switching Ordering no. Transistor NPN Break switching Ordering no. Transistor PNP Make switching Ordering no. Transistor PNP Break , Specifications Transistor NPN/PNP Rated operational voltage Rated operational current Continuous Voltage , , unmodulated Specifications (cont.) Transistor NPN/PNP SCR output AC types IP 67 -20 to +80ºC (-4 to


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PDF VP01/03: VP02/04: VP01E, VP03E VP01EP, VP03EP VP02E, VP04E VP01-. 228/1-G TIP 41 transistor ir water level sensor transistor BU 110 TIP 110 transistor ir receiver transistor VP03EP VP01E optical sensor with an amplifier VP03E beam break
transistor BU 426 A

Abstract: BU426 transistor bc 237c transistor the 6 MHz transistor BF 375
Text: TELEFUNKEN ELECTRONIC üHLÜtFMKIK] electronic CreativeTetfinok>Q *i 17E $ sssDoib oooma & BU 426 - BU 426 A I T - 33-/3 IAL66 Silicon NPN Power Transistors Applications: Switching mode , Standard plastic case 15 A 3 DIN 41 869 TOP 3 Weight max. 5.5 g BU 426 800 800 375 10 8 ^BM "*BM BU , AL66 * t BU 426 · BU 426 A Total power dissipation T-33-13 " 70 Junction temperature Storage , W °C «C 150 ·ttfl - 6 5 .+ 1 5 0 1.1 Min. Typ. Max. K /W 3 BU 426 BU 426 A BU 426


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PDF IAL66 15A3DIN E--07 transistor BU 426 A BU426 transistor bc 237c transistor the 6 MHz transistor BF 375
2008 - R3117

Abstract: No abstract text available
Text: voltage type, each drain of Nch transistor and Pch transistor is connected to the OUT pin. In the case of Nch Open drain output type, the drain of Nch transistor is connected to the OUT pin. (OUT pin should , 3.4300 3.5280 3.6260 3.7240 3.8220 3.9200 4.0180 4.1160 4.2140 4.3120 4.4100 4.5080 4.6060 4.7040 4.8020


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PDF R3117x EA-186-080425 R3117 R3117X R3117. R3117x50xA/C R3117x07xA/C
BU 508 transistor

Abstract: transistor bu Bu608A bu508 transistor BU 608 bu 508 sot-23 2603 transistor bc 488 BU608
Text: fl^EOO^b DOQTMbS IALG6 BU 508 · * BU 508 A T -32-/3 Silicon NPN Power Transistors Applications , IALGG BU 508 - BU 508 A Total power dissipation Tcase S 2 5 ° C Junction temperature Storage , Emitter-base breakdown voltage /E = » 100 mA Collector-emitter saturation voltage /c = 4 .5 A ,/a = 2 A BU 508 BU 608 A Base-emitter saturation voltage /c = 4 .5 A, /B = 2 A Gain bandwidth product vce = 5 v - > c , 8 I TELEFUNKEN ELECTRONIC 17E D fi^SQO^b O Q t m b ? 5 AL66 BU 508 · BU 508 A _


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PDF DIN41859 15A3DIN BU 508 transistor transistor bu Bu608A bu508 transistor BU 608 bu 508 sot-23 2603 transistor bc 488 BU608
cnc wiring

Abstract: inductive proximity sensor npn PROXIMITY inductive ic "inductive Proximity Sensor" transistor npn 150 volt npn transistor 70 volt 800 volt PNP transistor
Text: ) Output: IC 17: Transistor , NPN/PNP, make or break switching ID 25: Transistor , NPN/PNP, make switching , ] Ordering no. Transistor , NPN Make switching 4 mm Cable 17.5 x 17 x 28.5 IC 17 CNC 04 NO-K 2 mm 2 mm Cable Plug 40 x 26 x 12 40 x 26 x 12 Ordering no. Transistor , NPN Break switching Ordering no. Transistor , PNP Make switching IC 17 CNC 04 NC-K IC 17 CNC 04 PO-K ID 25 CNC 20 NO-K ID 25 CNC 20 NO M5-K Ordering no. Transistor , PNP Break switching IC 17 CNC 04 PC-K


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PROXIMITY inductive ic

Abstract: inductive sensor IC
Text: Output: IC 08: Transistor , NPN/PNP, make switching ID 25: Transistor , NPN/PNP, make switching or change , Dimensions [mm] Ordering no. Transistor , NPN Make switching 1.5 mm 1.5 mm Cable Plug 8 x 8 x , NO-K Ordering no. Transistor , NPN Change over Ordering no. Transistor , PNP Make switching Ordering no. Transistor , PNP Change over IC 08 ANC 15 PO-K IC 08 ANC 15 PO M5-K ID 25 ANC 05 NA-K , 2 WH 4 BK 3 BU 3 BU - NPN - Make switching - NPN - Break switching 3 BU 3


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K582-100A

Abstract: K582
Text: Semiconductors Product Specification PowerM O S transistor Logic level FET BU K582-100A 12 11 10 , Philips Semi c on du ct or s Pr oduct Specification P o w e rM O S transistor L o g i c level , field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is , 1998 1 Rev 1.100 Philips Semiconductors Product Specification PowerM O S transistor , PARAMETER CONDITIONS MI N. BU K582-100A T YP. MAX. UNIT V(BR )D SS V gS (T O ) I dss ^D S S


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PDF BUK582-1 OT223 K582-100A K582
IA06BSF10NO

Abstract: inductive proximity M8 IA06BSN20NOM5 IA06BSN20NO IA06BSN20NCM5 IA06BSN20NC IA06BSF10POM5 IA06BSF10PO IA06BSF10NOM5 IA06BSF10NCM5
Text: Output: Transistor NPN/PNP, make or break switching · Protection: Short-circuit, reverse polarity and , . Transistor NPN Make switching Ordering no. Transistor NPN Break switching Ordering no. Transistor PNP Make switching Ordering no. Transistor PNP Break switching 1.0 mm 1) 1.0 mm 1) 2.0 mm , 2 BK 4 BK 3 BU - NPN - Make switching 2 3 BU - NPN - Break switching 3 BU 3 BU PNP - Make switching PNP - Break switching Specifications are subject to change


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diode m5p

Abstract: switch transistor pnp or npn NPN switching power transistor npn transistor 70 volt IA 05 IA05BSF m5x0.5 DIMENSIONS transistor BSF
Text: distance: 1.0 mm · Power supply: 10 to 30 VDC · Output: Transistor NPN/PNP, make or break switching · , Conn. operating type dist. (Sn) Ordering no. Transistor NPN Make switching Ordering no. Transistor NPN Break switching Ordering no. Transistor PNP Make switching Ordering no. Transistor , + 4 BK 2 BK 2 BK 4 BK 3 BU 3 BU - NPN - Make switching - NPN - Break switching 3 BU 3 BU - PNP - Make switching PNP - Break switching Installation Hints To


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TRANSISTOR BDX

Abstract: transistor BDX 62 A transistor BU 184 transistor BU 109 bdx 330 BU800 darlington NPN 1000V 8a transistor transistor BDX 65 h21e BU 208 ESM855
Text: SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande , A ESM 4017 power transistor and darlington for TV applications selector guide guide de sà , 900V 130CIV 1500V 1700V Case 10 A BU 109 BU 109 D TO-3 BU 109 P BU 109DP TO-220 8A BU 189 BU 184 TO-220 BU 926 BU 926A TOP-3 7A BU 104 BU 104D TO-3 BU 407 BU 407 D BU 104P BU 104DP BU 406 BU 406 D TO-220 6 A BU 326 BU 326A TO-3 ESM 326 ESM 326A TO


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PDF 130CIV 109DP O-220 104DP BUX37 CB-159) BUV54 CB-19 TRANSISTOR BDX transistor BDX 62 A transistor BU 184 transistor BU 109 bdx 330 BU800 darlington NPN 1000V 8a transistor transistor BDX 65 h21e BU 208 ESM855
TRANSISTOR M5

Abstract: Transistor npn BSF 70
Text: supply: 10 to 30 VDC · Output: Transistor NPN/PNP, make or break switching · Protection: Transient and , 10 NO M5 Type Selection Rated Conn. operating type dist. (Sn) Ordering no. Transistor NPN Make switching Ordering no. Transistor NPN Break switching Ordering no. Transistor PNP Make switching Ordering no. Transistor PNP Break switching 1.2 mm 1) 1.2 mm 1) IA 05 BSF 10 NO IA 05 , 4 BK 3 BU 3 BU - NPN - Make switching - NPN - Break switching 3 BU 3 BU PNP


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Transistor npn

Abstract: BSN25PO
Text: Power supply: 10 to 30 VDC · Output: Transistor NPN/PNP, make or break switching · Protection , Rated Conn. operating type dist. (Sn) Ordering no. Transistor NPN Make switching Ordering no. Transistor NPN Break switching Ordering no. Transistor PNP Make switching Ordering no. Transistor , + 4 BK 2 WH 2 WH 4 BK 3 BU 3 BU - NPN - Make switching - NPN - Break switching 3 BU 3 BU PNP - Make switching PNP - Break switching Installation Hints To avoid


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75n80

Abstract: torque for M16 brass nut Baumer switch ip transistor transistor ip
Text: protection class IP 67 transistor output NPN / PNP protection class IP 50 transistor output NPN / PNP protection class IP 50 transistor output NPN / PNP protection class IP 67 BN 47k +~ -~ NPN , mm approx. M 8 x 0,5 M 8 x 0,5 ø1 56 26 49,5 12,5 SW 10 ø1 * BK BU , M16 x 0,5 M 8 x 0,5 47k +VS Z output BU +VS 2/4 3 Z 0V BK NPN , ) / break function BU BK BU 1 2/4 BN normally closed (NC) / break function 47k


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PDF D250/80 G75N80/L G75P80/L L75N80/L L75P80/L 75n80 torque for M16 brass nut Baumer switch ip transistor transistor ip
TDA 4600-2

Abstract: Q63100-P2462-J29 siemens PTC thermistor j29 2501 optocoupler smps control ic with 6 pin sip TDA 4601 Self Oscillating Flyback Converters P2462-J29 Self-Oscillating Flyback Converters Q63100
Text: Characteristics Turn-on is the same as for circuit 3. To make the price more attractive, switching transistor BU , control of the switching transistor • Low start-up current • Reversing linear overload , , controlling and protecting the switching transistor in self-oscillating flyback converter power supplies as , the switching transistor in flyback converter power supplies during start-up, normal and overload , transistor is inhibited and a secondary voltage rise is prevented. I. Start-Up The start-up procedures


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PDF Q67000-A2379 4601-D Q67000-A2390 P-DIP-18 4601/D /125V TDA 4600-2 Q63100-P2462-J29 siemens PTC thermistor j29 2501 optocoupler smps control ic with 6 pin sip TDA 4601 Self Oscillating Flyback Converters P2462-J29 Self-Oscillating Flyback Converters Q63100
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