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LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor BD245 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BD245C

Abstract:
Text: BD245 , BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Copyright © 1997. Power Innovations , otherwise noted) RATING 8D245 Colleclor-em itter voltage {Rgg = 100 12} BD245A BD245B BD245C BD245 C , is based on the capability o f the transistor to operate safely in a circuit of: L = 20 mH, lB{or>i = , of alt parameters. P 2-35 BD245 , BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS JUNE , Coltector-emitter ,-g a ^ y y r , voltage TEST CONDfTIONS BD245 (BRjceo MIN 45 60 80 100 BD245A BD245B 8D245C


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PDF BD245, BD245A, BD245B, BD245C BD246 OT-93 8D245 BD245A BD245B bd245 b0245c transistor BD245
1973 - transistor BD245

Abstract:
Text: BD245 , BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary , noted) RATING BD245 Collector-emitter voltage (RBE = 100 ) BD245A BD245B BD245C BD245 Collector-emitter , at the rate of 24 mW/°C. This rating is based on the capability of the transistor to operate safely , without notice. BD245 , BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD245 V(BR


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PDF BD245, BD245A, BD245B, BD245C BD246 global/pdfs/TSP1203 OT-93 BD245 BD245A BD245B transistor BD245
1973 - BD245

Abstract:
Text: BD245 , BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary , °C case temperature (unless otherwise noted) RATING BD245 Collector-emitter voltage (RBE = 100 ) BD245A , 24 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of , BD245C BD245 BD245A BD245B V CEO BD245C VEBO IC IB ICM Ptot Ptot Tj ½LIC2 Tstg TL PRODUCT , . BD245 , BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case


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PDF BD245, BD245A, BD245B, BD245C BD246 OT-93 BD245 BD245A BD245B
1973 - transistor BD245

Abstract:
Text: BD245 , BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary Use , temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor to operate , . NOITAMROFNI NOTES: 1. 2. 3. 4. V 115 BD245 Collector-emitter voltage (IC = 30 mA) UNIT 55 BD245 BD245A VALUE TCUDORP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD245 , BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS


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PDF BD245, BD245A, BD245B, BD245C BD246 OT-93 BD245B BD245A transistor BD245 BD245 BD245B BD245C BD245A
1973 - transistor BD245

Abstract:
Text: BD245 , BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary Use , temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor to operate , . NOITAMROFNI NOTES: 1. 2. 3. 4. V 115 BD245 Collector-emitter voltage (IC = 30 mA) UNIT 55 BD245 BD245A VALUE TCUDORP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD245 , BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS


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PDF BD245, BD245A, BD245B, BD245C BD246 OT-93 BD245B BD245A transistor BD245 BD245A BD245 BD245 transistor BD245B BD245C
bd245c

Abstract:
Text: slightly with transistor parameters. PRODUCT INFORMATION 2 BD245 , BD245A, BD245B, BD245C NPN , BD245 , BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Copyright© 1997, Power Innovations , mounting base. absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD245 Collector-emitter voltage (RBE = 100 £2) BD245A BD245B BD245C BD245 Collector-emitter voltage (lc = 30 mA) BD245A , °C free air temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor


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PDF BD245, BD245A, BD245B, BD245C BD246 OT-93 BD245 BD245A BD245B transistor BD245 lc 245a Y parameters of transistors
1973 - transistor BD245

Abstract:
Text: BD245 , BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD245 Collector-emitter voltage (RBE = 100 ) BD245A BD245B VALUE VCER 70 90 BD245C V 115 BD245 , °C free air temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor , processing does not necessarily include testing of all parameters. 1 BD245 , BD245A, BD245B, BD245C


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PDF BD245, BD245A, BD245B, BD245C BD246 OT-93 BD245 BD245A BD245B transistor BD245 bd245c BD245 BD245A BD245B
tip 420 transistor

Abstract:
Text: are nominal; exact values vary slightly with transistor parameters. 2-48 Texas Instruments BD245 ,  BD245 , BD245A, BD245B, BD245C FOR POWER AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS , (unless otherwise noted) BD245 Collector-Emitter Voltage (FIbe = 100 fi).55 V , based on the capability of the transistor to operate safely in the cir VBB2 = 0 V, Rs = 0.1 Vcc = 10 V , published at a later date. Texas Instruments 2-47 BD245 , BD245A, BD245B, BD245C electrical


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PDF BD245, BD245A, BD245B, BD245C BD246A-C BD245 40PEP 80PEP OT-32 OT-32 tip 420 transistor BD245C TEXAS INSTRUMENTS transistor tip 420 BD245 transistor BD245 transistor BD 246 BD245C transistor tip 3055 tip 420 transistor bd 202
B0246

Abstract:
Text: BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Copyright © 19&7. Power Innovations Limited, UK JUNE 1973 - REVISED M ARCH 1997 · · · · · Designed for Complementary Use with the BD245 Series 80 W at 25°C Case Temperature B C SOT-93 PA C K A G E (TOP VIEW) 10 A Continuous Collector , temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor to operate , Voltage and current values shown are nominal; exact values vary slightly with transistor parameters


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PDF BD246, BD246A, BD246B, BD246C BD245 OT-93 BD246 BD246A BD246B B0246 B0-246 BD2468
1973 - BD246c

Abstract:
Text: BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD245 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available C B SOT-93 PACKAGE (TOP VIEW) 1 2 E 3 , 24 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of , values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2


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PDF BD246, BD246A, BD246B, BD246C BD245 OT-93 BD246 BD246A BD246B C246C
BD246

Abstract:
Text: TRANSYS ELECTRONICS LIMITED BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS • Designed for Complementary Use with the BD245 Series • 80 W at 25°C Case Temperature • 10 A Continuous Collector Current • 15 A Peak Collector Current • Customer-Specified Selections Available B , temperature at the rate of 24 mW/°C. 4. This rating is based on the capability of the transistor to operate , current values shown are nominal; exact values vary slightly with transistor parameters. BD246, BD246A


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PDF BD246, BD246A, BD246B, BD246C BD245 OT-93 BD246 BD246A BD246B BD246C transistor BD245 b0246
1973 - BD246

Abstract:
Text: BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD245 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available SOT-93 PACKAGE (TOP , the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 , VBE(off) = , slightly with transistor parameters. TCUDORP 2 IC = -1 A Turn-off time NOITAMROFNI


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PDF BD246, BD246A, BD246B, BD246C BD245 OT-93 BD246B BD246A BD246 transistor BD245 BD246A BD246B BD246C
1973 - bd246c

Abstract:
Text: BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD245 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available This model is currently available, but not , temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor to operate , values vary slightly with transistor parameters. PRODUCT 2 INFORMATION JUNE 1973 - REVISED


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PDF BD246, BD246A, BD246B, BD246C BD245 global/pdfs/TSP1203 OT-93 BD246 BD246A BD246B
1973 - BD246C

Abstract:
Text: BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD245 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available SOT-93 PACKAGE (TOP , the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 , VBE(off) = , slightly with transistor parameters. TCUDORP 2 IC = -1 A Turn-off time NOITAMROFNI


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PDF BD246, BD246A, BD246B, BD246C BD245 OT-93 BD246B BD246A BD246C BD246 BD246A transistor BD245 BD246B transistor bd246a
BD246C

Abstract:
Text: BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 · · · · · Designed for Complementary Use with the BD245 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current , based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, le(on) = -0.4 A , t Voltage and current values shown are nominal; exact values vary slightly with transistor


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PDF BD246, BD246A, BD246B, BD246C BD245 OT-93 BD246 BD246A BD246B transistor BD245
1973 - BD245

Abstract:
Text: BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK q JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD245 Series q 80 W at 25°C Case Temperature q 10 A Continuous Collector Current q 15 A Peak , capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 , VBE , transistor parameters. PRODUCT 2 INFORMATION BD246, BD246A, BD246B, BD246C PNP SILICON POWER


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PDF BD246, BD246A, BD246B, BD246C BD245 OT-93 BD246 BD246A BD246B transistor BD245 BD246 BD246A BD246B BD246C
2008 - TIC106D equivalent

Abstract:
Text: -220 Transistor & Darlington Cross Reference Industry Part No. Recommended Bourns Equivalent BD239 , BD244A BD244B BD244C BD245 BD245A BD245B BD245C BD246 BD246A BD246B BD246C BD249 BD249A


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PDF O-220, OT-93 2M/TSP0711 TIC106D equivalent TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
2009 - TIC106M SCR

Abstract:
Text: -220 Transistor & Darlington Cross Reference Industry Part No. Recommended Bourns Equivalent BD239 , BD244A BD244B BD244C BD245 BD245A BD245B BD245C BD246 BD246A BD246B BD246C BD249 BD249A


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PDF O-220, OT-93 2M/TSP0904 TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC116D equivalent TIC126D equivalent
ESM 740

Abstract:
Text: in the fS6 package · Mini-MOS Family · One-gate CMOS (L-MOS) · Transistor Array series (S-Driver , Interface Drivers Bipolar Transistor Arrays/DMOS Transistor Arrays S-Driver/Multi-Chip Transistor Arrays , high-density mounting. Elimination of individual components by use of bias resistor built-in transistor , 2.5-V gate drive (Vth = 1.5 V max) Ron = 20 (typ.) PNP low-saturation transistor ­400 Suitable , low-saturation transistor ­400 Suitable for power supply switches 100 Built-in 1-M gate-source resistor


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PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin transistor t04 smd 2fu smd transistor pnp Octal Darlington Transistor Arrays DIP 8ch pnp DARLINGTON TRANSISTOR ARRAY
1999 - TV horizontal Deflection Systems

Abstract:
Text: of the paper is an introduction to the operation of the deflection transistor . The switching times , transistor technologies. The various options that a power transistor designer has are outlined. The transistor characteristics are divided into three areas: (i) edge termination, (ii) the emitter layout and , are mentioned in brief. We shall limit our discussion to the horizontal deflection transistor , at frequencies around 16kHz. The current requirements of the transistor switch varied between 2A


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PDF 16kHz 32kHz, 64kHz, 100kHz. TV horizontal Deflection Systems TRANSISTOR REPLACEMENT GUIDE an363 TV horizontal Deflection Systems 25 transistor horizontal section tv Horizontal Deflection Switching Transistors TV horizontal Deflection Systems mosfet horizontal section in crt television TV flyback transformer CRT TV electron gun
1999 - ADM6315-31D4ARTZR7

Abstract:
Text: STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown , -40°C to +125°C -40°C to +125°C Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 ADM6315 D00081-0-12/11 ADM6315-31D4ARTZR7 ADM6315-29D4ART-RL7 ADM6315-46D3ART branding llv transistor F 463 V/65e9 transistor
2006 - ADM6315-44D2ARTZR71

Abstract:
Text: -Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown in millimeters ORDERING GUIDE , Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 ADM6315 C00081-0-4/06 ADM6315-44D2ARTZR71 transistor C 2240 308 transistor ADM6315-29D2ARTZR71 sot143
1999 - TO-253-AA

Abstract:
Text: JEDEC STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA , 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 OT-143 D00081-0-9/07 TO-253-AA Small-outline integrated circuit SOT 143 46d1 transistor 143 308 transistor MDV 1-2 kv sot143 SOT-143 ADM6315-44D1ARTRL7 ADM6315-44D1ART-RL
1999 - Not Available

Abstract:
Text: TO JEDEC STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA , -Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4


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PDF OT-143 ADM6315 ADM811 OT-143 D00081-0-12/11
YG6260

Abstract:
Text: Transistor U tilization Precautions When semiconductors are being used, caution must be exercised , heat sink and minimize transistor stress. (1) Silicone grease A thin, even layer of silicone grease should be applied between the transistor and heat sink to improve thermal resistance. Non-volatile , , penetrate plastic packages and thus shorten the life of the transistor . The base oil of Toshiba Silicone Grease YG6260 does not easily separate and thus does not adversely affect the life of transistor . This


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