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LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor BD139 PH 71 Datasheets Context Search

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BD139

Abstract: BD140 BD139 application BD140 application circuits circuits BD139 NPN transistor BD136 TRANSISTOR NPN BD140 BD140 npn BD135 of ic BD140
Text: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are , and BD139 , and the complementary PNP types are the BD136 and BD140. Figure 1. Internal , BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139 -10 BD139 -10 BD139 -16 BD139 -16 BD140 BD140 BD140-10 BD140-10 BD140-16 Package Packaging SOT-32 Tube BD140-16 1/9 9 BD135 - BD136 - BD139 - BD140 1 Electrical ratings


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PDF BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD140 BD139 application BD140 application circuits circuits BD139 NPN transistor BD136 TRANSISTOR NPN BD140 BD140 npn of ic BD140
2013 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BD139 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS ï , MHz 2 of 3 QW-R204-007.C BD139 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS ï , -251 (3) refer to hFE (4) L: Lead Free, G: Halogen Free 1 of 3 QW-R204-007.C BD139  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER Collector-Base Voltage Collector-Emitter , CBO Emitter Cut-Off Current I EBO DC Current Gain h FE BD139 -10 DC Current Gain BD139


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PDF BD139 O-251 O-126 BD139L-xx-T60-K BD139G-xx-T60-K BD139L-xx-TM3-T BD139G-xx-TM3-T
2004 - BD139 application

Abstract: BD139 NPN transistor TRANSISTOR NPN BD139 BD139 BD139 NPN hFE-120 npn
Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current (max , BD139 -10 BD139 -16 Collector-emitter saturation voltage Base-emitter voltage Transition frequency VCE , UNISONIC TECHNOLOGIES CO. LTD 1 QW-R213-010,A UTC BD139 160 hFE 120 NPN EPITAXIAL SILICON TRANSISTOR VCE=2V 80 40 0 10-1 1 10 Fig.1 DC current gain;typical values. 102 IC(mA) 103 UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R213-010,A UTC BD139 NPN EPITAXIAL SILICON


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PDF BD139 O-251 QW-R213-010 BD139 application BD139 NPN transistor TRANSISTOR NPN BD139 BD139 BD139 NPN hFE-120 npn
1995 - BD139 MOTOROLA

Abstract: BD139 h parameters BD139 transistor BD135 BD 139 transistor BD135 transistor BD137 parameters U/25/20/TN26/15/850/power transistor bd135 bd139 pin out BD135-D
Text: SILICON 45, 60, 80 VOLTS 10 WATTS Plastic Medium Power Silicon NPN Transistor BD135 BD137 BD139 , © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 REV 7 , Transistor Device Data Figure 1. Active­Region Safe Operating Area 0.01 1 2 5 10 20 50 VCE, COLLECTOR­EMITTER VOLTAGE (VOLTS) 80 BD135 BD137 BD139 0.02 IC, COLLECTOR CURRENT (AMP) 0.05 0.1 , Symbol UnIt ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) BD135 BD137 BD139


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PDF BD135/D* BD135/D BD139 MOTOROLA BD139 h parameters BD139 transistor BD135 BD 139 transistor BD135 transistor BD137 parameters U/25/20/TN26/15/850/power transistor bd135 bd139 pin out BD135-D
2000 - QBD135

Abstract: bd139 bd135 to-126 BD13916S Cross-Reference DATE transistor cross reference TO-126 fairchild BD135 bd139 cross reference transistor A 1263
Text: Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD135 : BD137 : BD139 : BD135 : BD137 : BD139 Value 45 60 80 45 60 80 5 1.5 3.0 0.5 12.5 , Collector-Emitter Sustaining Voltage : BD135 : BD137 : BD139 Collector Cut-off Current Emitter Cut-off Current DC Current Gain : ALL DEVICE : ALL DEVICE : BD135 : BD137, BD139 Test Condition IC = 30mA, IB = 0 Min. 45 60 , 100us DC 0.1 BD139 BD137 BD135 10 100 IC[A], COLLECTOR CURRENT VCE [V


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PDF BD135/137/139 BD136, BD138 BD140 O-126 BD135 BD137 BD139 QBD135 bd139 bd135 to-126 BD13916S Cross-Reference DATE transistor cross reference TO-126 fairchild BD135 bd139 cross reference transistor A 1263
2013 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BD139 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS ï , -251 (3) refer to hFE (4) L: Lead Free, G: Halogen Free 1 of 3 QW-R204-007.D BD139  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER Collector-Base Voltage Collector-Emitter , Emitter Cut-Off Current IEBO DC Current Gain hFE BD139 -10 DC Current Gain BD139 , 63 25 63 100 250 160 250 0.5 1 190 V V MHz 2 of 3 QW-R204-007.D BD139 NPN


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PDF BD139 O-251 O-126 BD139L-xx-T60-K BD139G-xx-T60-K BD139L-xx-TM3-T BD139G-xx-TM3-T
2004 - bd139 application note

Abstract: BD139 NPN BD139 application
Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current (max.1.5A) *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 , UTC BD139 PARAMETER Collector cut-off current Emitter cut-off current DC current gain NPN EPITAXIAL SILICON TRANSISTOR SYMBOL ICBO IEBO hFE ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise , A nA 190 250 160 250 0.5 1 - DC current gain BD139 -10 BD139 -16 Collector-emitter saturation


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PDF BD139 O-126 Tmb70 QW-R204-007 bd139 application note BD139 NPN BD139 application
2007 - BD135

Abstract: No abstract text available
Text: BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and , -16 BD135-6 BD135-10 BD135-16 BD137-16 BD137-10 BD137-16 BD139 -16 BD139 -10 BD139 -16 BD139 -6 BD139 , / 139 — NPN Epitaxial Silicon Transistor August 2013 Stresses exceeding the absolute maximum , BD135 BD137 BD139 BD135 BD137 BD139 Emitter-Base Voltage Collector Current (DC) Collector , ) Parameter Test Condition BD135 BD137 BD139 Collector-Emitter Sustaining Voltage Collector Cut-off


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PDF BD135 BD136, BD138 BD140 O-126 BD13516S BD1356STU BD13510STU BD13516STU BD13716STU
2008 - BD135 CURVES

Abstract: BD140 application circuits circuits BD139 TRANSISTOR NPN BD140 BD139 application BD140 TRANSISTOR NPN BD139 BD136 transistor BD135 BD140 npn
Text: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are , and BD139 , and the complementary PNP types are the BD136 and BD140. Figure 1. Internal , BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139 -10 BD139 -10 BD139 -16 BD139 -16 BD140 BD140 BD140-10 BD140-10 BD140-16 BD140-16 Rev , BD135 - BD136 - BD139 - BD140 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . .


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PDF BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD135 CURVES BD140 application circuits circuits TRANSISTOR NPN BD140 BD139 application BD140 TRANSISTOR NPN BD139 BD136 transistor BD135 BD140 npn
2009 - BD139G

Abstract: BD139L BD139 NPN power transistor bd139 TRANSISTOR NPN BD139 BD139 BD139 NPN transistor MAX15A BD139 power transistor TRANSISTOR BD139
Text: UNISONIC TECHNOLOGIES CO., LTD BD139 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES 1 * High current (max.1.5A) * Low voltage (max.80V) TO-251 1 TO-126 Lead-free: BD139L , QW-R204-007.B BD139 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER Collector-Base , 2 of 3 QW-R204-007.B BD139 NPN SILICON TRANSISTOR DC Current Gain, hFE TYPICAL , Current ICBO Emitter Cut-Off Current IEBO DC Current Gain hFE BD139 -10 BD139


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PDF BD139 O-251 O-126 BD139L BD139G BD139-T60-K BD139-TM3-T BD139L-T60-K BD139L-TM3-T BD139G-T60-K BD139G BD139L BD139 NPN power transistor bd139 TRANSISTOR NPN BD139 BD139 BD139 NPN transistor MAX15A BD139 power transistor TRANSISTOR BD139
8D139

Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 transistor a110 TRANSISTOR BD 137-10 B0137 D106-V2 BD135
Text: ±D,2— « ■■■■' ■I 1 jso.1 t Appro*, weight 0.S g Dimensions in mm Transistor fixing , BD135, BD137, BD139 14 Permissible pulse load Jt. rthjc = f (t); v= parameter W BD136, BD137. BD139 , range . Ic = f(Vce);Tea« = 60°C;v = 0 A B D 135, BD137, BD139 Collector current Ic = f (VBE) VCE = 2 , , BD139 -10 Collector cutoff current versus temperature kaO ~ '(T'amh) nA BD135, BD137, BD139 ras 150 , configuration) mA BD135, BD137. BD139 10lr Base-emitter saturation voltage v0EMt=f(jy hn =10; ramb =


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PDF fl23SbQS 135/BD 137/BD BD135, B0137, B0139 BD137, BD139 BD136. 8D139 bd139 B0139 TRANSISTOR BD 137 transistor BD 378 transistor a110 TRANSISTOR BD 137-10 B0137 D106-V2 BD135
2008 - BD139

Abstract: BD139-10 bd140-10
Text: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features I Products are , and BD139 , and the complementary PNP types are the BD136 and BD140. Figure 1. Internal , BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139 -10 BD139 -10 BD139 -16 BD139 -16 BD140 BD140 BD140-10 BD140-10 BD140-16 BD140 , BD135 - BD136 - BD139 - BD140 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . .


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PDF BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD139-10 bd140-10
BD139 PIN DIAGRAM

Abstract: BD135 PIN DIAGRAM to225aa BD137G BD139 BD139G TRANSISTOR bd 330 bd139 140 pin diagram of bd139 BD137
Text: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic , BD135 BD137 BD139 VCEO 45 60 80 Vdc BD135 BD137 BD139 VCBO 45 60 100 Vdc , °C/W TO-225AA 500 Units/Box BD137G TO-225AA (Pb-Free) 500 Units/Box BD139 TO , . 1 BD135, BD137, BD139 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted , ms 1.0 TJ = 125°C 0.5 dc 0.1 0.05 BD135 BD137 BD139 0.02 0.01 1 2 5 10


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PDF BD135, BD137, BD139 BD135 BD137 BD139 PIN DIAGRAM BD135 PIN DIAGRAM to225aa BD137G BD139 BD139G TRANSISTOR bd 330 bd139 140 pin diagram of bd139 BD137
1995 - transistor BD139 N

Abstract: TRANSISTOR NPN BD139 CIRCUIT DIAGRAM OF BD135 bd139 equivalent BD139 N transistor bd139 BD139 transistor TRANSISTOR NPN BD140 bd139 data sheet BD139 NPN transistor download datasheet
Text: BD135 BD137/ BD139 NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic , SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e BD135 BD137 Unit BD139 , -65 to 150 o C 150 o C 1/4 BD135/BD137/ BD139 THERMAL DATA R thj -ca se , for BD139 Unit µA µA 10 V EB = 5 V Max. 0.1 10 TC = 125 o C T yp. µA 45


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PDF BD135 BD137/BD139 BD135, BD137 BD139 OT-32 BD136 BD138 BD140. transistor BD139 N TRANSISTOR NPN BD139 CIRCUIT DIAGRAM OF BD135 bd139 equivalent BD139 N transistor bd139 BD139 transistor TRANSISTOR NPN BD140 bd139 data sheet BD139 NPN transistor download datasheet
2000 - BD139

Abstract: BD136 BD139 time bd140 Complement power transistor bd139 BD135 BD137 BD138 BD140
Text: Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD135 : BD137 : BD139 Value 45 60 80 Units V V V VCEO Collector-Emitter Voltage : BD135 : BD137 : BD139 45 60 80 V V V VEBO Emitter-Base Voltage 5 , ) Parameter Collector-Emitter Sustaining Voltage : BD135 : BD137 : BD139 Test Condition IC = 30mA, IB , : ALL DEVICE : ALL DEVICE : BD135 : BD137, BD139 VCE(sat) Collector-Emitter Saturation Voltage


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PDF BD135/137/139 BD136, BD138 BD140 O-126 BD135 BD137 BD139 BD139 BD136 BD139 time bd140 Complement power transistor bd139 BD135 BD137
transistor BD139 N

Abstract: bd139 Complement
Text: KSD135/137/139 MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS NPN EPITAXIAL SILICON TRANSISTOR · Complement to BD136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage : BD137 : BD139 Collector Emitter Voltage : BD135 : BD137 : BD139 Emitter Base Voltage , Sustaining Voltage : BD135 : BD137 : BD139 Collector Cutoff Current Emitter Cutoff Current DC Current Gain : ALL DEVICE : ALL DEVICE : BD135 : BD137, BD139 Collector Emitter Saturation Voltage Base Emitter On


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PDF KSD135/137/139 BD136 BD140 BD137 BD139 BD135 transistor BD139 N bd139 Complement
1997 - bd139 application note

Abstract: power transistor bd139 to 220 BD135 philips philips power transistor bd139 BD139 philips BD139 Philips Bd139 BD139 application TRANSISTOR NPN BD139 BD137
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power , BD135; BD137; BD139 FEATURES PINNING · High current (max. 1.5 A) PIN · Low voltage (max , handbook, halfpage NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136 , V BD139 - - 100 V BD135 - - 45 V BD137 - - 60 V BD139 VCEO - - - 80 V collector-emitter voltage open base ICM peak


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PDF M3D100 BD135; BD137; BD139 O-126; BD136, BD138 bd139 application note power transistor bd139 to 220 BD135 philips philips power transistor bd139 BD139 philips BD139 Philips Bd139 BD139 application TRANSISTOR NPN BD139 BD137
transistor BD139 N

Abstract: BD135-BD137-BD139
Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS , ris tic C ollector Base Voltage : BD137 : BD139 C ollector Em itter V o lta g e : BD 135 : BD137 : BD139 E m itter Base Voltage C ollector C urrent (DC) C ollector C urrent (Pulse) Base Current C , CHARACTERISTICS (T c=25°C) C h a ra c te ris tic C ollector E m itter Sustaining Voltage : BD135 : BD137 : BD139 C ollector C utoff Current E m itter Cutoff C urrent DC Current G ain : BD135 : BD137, BD139 C


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PDF BD135/137/139 BD136, BD138 BD140 BD137 BD139 BD135 transistor BD139 N BD135-BD137-BD139
BDI35

Abstract: BDI37 LB 137 transistor transistor BD 139 transistor BD139 N BD 139 N BD139 BD 139 transistor bd 135 Transistor Bd 140
Text: Transistor Device Data BD135 BD137 BD139 PACKAGE DIMENSIONS N OTES: 1. 2. D IM E N S IO N IN G A N D , Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or , complementary with BD 136, 138, 140 BD135 BD137 BD139 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 , © M otorola, Inc. 1995 ($J M O T O R O L A BDI35 BDI37 BD139 ELECTRICAL CHARACTERISTICS (T q = , ISSUE V Motorola Bipolar Power Transistor Device Data 3


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PDF BD135/D BD135 BD137 BD139 O-225AA BDI35 BDI37 LB 137 transistor transistor BD 139 transistor BD139 N BD 139 N BD139 BD 139 transistor bd 135 Transistor Bd 140
2001 - BD137 parameters

Abstract: TRANSISTOR BD 136 BD139 h parameters BD139 power transistor bd137 BD 139 & 140 BD139 circuits BD137 BD135 TRANSISTOR BD139
Text: complementary circuits. BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor ON , BD139 0.02 0.05 0.1 0.5 dc TJ = 125°C 1.0 2.0 0.5 ms 5 ms 0.1 ms 5.0 10.0 , Characteristic THERMAL CHARACTERISTICS BD135 BD137 BD139 BD135 BD137 BD139 PACKAGE DIMENSIONS TO , _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 - BD135 BD137 BD139 ON


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PDF BD135/D r14525 BD137 parameters TRANSISTOR BD 136 BD139 h parameters BD139 power transistor bd137 BD 139 & 140 BD139 circuits BD137 BD135 TRANSISTOR BD139
2004 - transistor BD 141

Abstract: BD139G bd139 140 BD139-25 BD139 NPN transistor Bd139 operation of BD 139 bd135 diagram
Text: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic , BD139 BD135 BD137 BD139 Collector-Base Voltage VCBO 45 60 100 5.0 1.5 0.5 Vdc Emitter-Base Voltage , Week ORDERING INFORMATION Device BD135 BD137 BD139 BD139G Package TO-225AA TO-225AA TO-225AA TO , ) 5.0 2.0 1.0 0.5 TJ = 125°C dc 5 ms 0.1 ms 0.5 ms BD135, BD137, BD139 0.1 0.05 0.02 0.01 1 BD135 BD137 BD139 2 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 80 Figure 1. Active-Region Safe


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PDF BD135, BD137, BD139 BD139 BD135 BD137 transistor BD 141 BD139G bd139 140 BD139-25 BD139 NPN transistor operation of BD 139 bd135 diagram
1999 - BD135

Abstract: BD139 BD136 BD137 bd139 Complement BD140 power transistor bd139 transistor BD140 TRANSISTOR NPN BD139
Text: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING , Characteristic Symbol Collector Base Voltage : BD135 : BD137 : BD139 Collector Emitter Voltage : BD135 : BD137 : BD139 Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current , Sustaining Voltage : BD135 : BD137 : BD139 Collector Cutoff Current Emitter Cutoff Current DC Current Gain : ALL DEVICE : ALL DEVICE : BD135 : BD137, BD139 Collector Emitter Saturation Voltage Base


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PDF KSD135/137/139 O-126 BD136 BD140 BD135 BD137 BD139 BD135 BD139 BD137 bd139 Complement power transistor bd139 transistor BD140 TRANSISTOR NPN BD139
2005 - BD139 PIN DIAGRAM

Abstract: CIRCUIT DIAGRAM OF BD139 140 CIRCUIT DIAGRAM OF BD135 bd139 pin out CIRCUIT DIAGRAM OF BD139 BD139 h parameters BD137 parameters BD137G BD139 transistor circuit diagram BD139G
Text: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic , Symbol Value BD135 BD137 BD139 VCEO 45 60 80 Vdc BD135 BD137 BD139 VCBO 45 , /Box BD139 TO-225AA 500 Units/Box BD139G TO-225AA (Pb-Free) 500 Units/Box For , - Rev. 12 1 Publication Order Number: BD135/D BD135, BD137, BD139 ELECTRICAL , dc 0.1 0.05 BD135 BD137 BD139 0.02 0.01 1 2 5 10 20 50 VCE, COLLECTOR-EMITTER


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PDF BD135, BD137, BD139 BD135 BD137 BD135/D BD139 PIN DIAGRAM CIRCUIT DIAGRAM OF BD139 140 CIRCUIT DIAGRAM OF BD135 bd139 pin out CIRCUIT DIAGRAM OF BD139 BD139 h parameters BD137 parameters BD137G BD139 transistor circuit diagram BD139G
2004 - BD139 h parameters

Abstract: BD139 PIN DIAGRAM BD139 transistor circuit diagram CIRCUIT DIAGRAM OF BD135 BD135-BD137-BD139 BD139 PIN DATA transistor BD139 N BD137 parameters BD139-25 bd139 140
Text: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic , BD139 BD135 BD137 BD139 Collector-Base Voltage VCBO 45 60 100 5.0 1.5 0.5 Vdc Emitter-Base Voltage , Week ORDERING INFORMATION Device BD135 BD137 BD139 BD139G Package TO-225AA TO-225AA TO-225AA TO , ms 0.1 ms 0.5 ms dc BD135, BD137, BD139 0.1 0.05 0.02 0.01 1 BD135 BD137 BD139 2 5 10 20 50 VCE , BD135, BD137, BD139 PACKAGE DIMENSIONS TO-225AA CASE 77-09 ISSUE Z NOTES: 1. DIMENSIONING AND


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PDF BD135, BD137, BD139 BD135/D BD139 h parameters BD139 PIN DIAGRAM BD139 transistor circuit diagram CIRCUIT DIAGRAM OF BD135 BD135-BD137-BD139 BD139 PIN DATA transistor BD139 N BD137 parameters BD139-25 bd139 140
AGP 9805

Abstract: transistor SMD FLO 14 2222 031 capacitor philips transistor smd bh smd transistor GY transistor bd139 smd transistor GY 740 PH smd transistor PH PH BD139 358 SMD
Text: transistor BD139 9330 912 20112 15 nF 47 x 1.8 mm 2 x 5 mm 4 x 6 mm 4 x 8 mm 8.1 x 10 mm 1 5 x 2 mm 5 x 1 0 , DISCRETE SEMICONDUCTORS BITÂ S y i I T BLV862 UHF linear push-pull power transistor Product , power transistor FEATURES · Double stage internal input and output matching networks for an optimum , planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a , iconductors Product specification UHF linear push-pull power transistor LIMITING VALUES In accordance


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PDF BLV862 SC08a 127047/00/04/pp12 AGP 9805 transistor SMD FLO 14 2222 031 capacitor philips transistor smd bh smd transistor GY transistor bd139 smd transistor GY 740 PH smd transistor PH PH BD139 358 SMD
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