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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
UJ3C065080T3S UJ3C065080T3S ECAD Model UnitedSiC Power Field-Effect Transistor
UF3C065080B7S UF3C065080B7S ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-7L
UF3C120150K4S UF3C120150K4S ECAD Model UnitedSiC 1200V-150mΩ SiC FET TO-247-4L
UF3SC120040B7S UF3SC120040B7S ECAD Model UnitedSiC 1200V-35mΩ SiC FET D2PAK-7L
UJ3C065080B3 UJ3C065080B3 ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-3L
UJ4C075023B7S UJ4C075023B7S ECAD Model UnitedSiC 750V-23mΩ SiC FET D2PAK-7L

transistor BC188 npn Datasheets Context Search

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1998 - NPN general purpose silicon transistors

Abstract: Transistors General UMZ1N transistor 526 c114e 2SC411K transistors C124E dual npn 500ma 581 PNP
Text: dimensions (Units: mm) FStructure Epitaxial planar type NPN / PNP silicon transistor FAbsolute maximum , . FStructure Epitaxial planar type NPN / PNP silicon transistor (Built-in resistor type) The following , be cut in half. FStructure A PNP and a NPN digital transistor (each with a single built in resistor , area can be cut in half. FStructure NPN / PNP epitaxial planar silicon transistor FExternal dimensions , (94S-902-AC144T) (94S-904-AC114Y) 581 Transistors General purpose transistor (dual transistors


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PDF 94S-830-AC115E) 96-458-AC124T) IMD10A 96-555-IMD10) IMD16A 96-473-IMD16) 94S-902-AC144T) 94S-904-AC114Y) 2SA1036K 2SC411K NPN general purpose silicon transistors Transistors General UMZ1N transistor 526 c114e transistors C124E dual npn 500ma 581 PNP
schematic diagram 48 volt UPS

Abstract: 12 volt zener diode on pspice 74 Series IC Manual TM3J pnp npn dual emitter connected 750 ohm resistor pnp high emitter base voltage 15 volt design manual transistor schottky model spice 7.5 volt zener diode on pspice
Text: transistor in the 700 Series has three modes of operation, NPN transistor , lateral PNP transistor , and substrate PNP transistor . Pin Function 1. NPN Base, PNP Collector 2. NPN Emitter 3. NPN Collector, PNP , Emitter NPN Transistor As an NPN transistor there are two separate bases and three emitters which you , 24mA (8mA per emitter) The base emitter junction of the NPN transistor makes an excellent 5.9 volt , ) 3 E C I SEMICONDUCTOR MflE D 30267^7 DDDDDb? TMb «ECIS T-M-3J EEI NPN Transistor hFE vs Ic (1


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PDF 800MHz) schematic diagram 48 volt UPS 12 volt zener diode on pspice 74 Series IC Manual TM3J pnp npn dual emitter connected 750 ohm resistor pnp high emitter base voltage 15 volt design manual transistor schottky model spice 7.5 volt zener diode on pspice
73412

Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Text: . 3-35 NPN Medium Power Microwave Transistor . 3-39 NPN Medium Power Microwave Transistor . 3-39 NPN Silicon High Speed Switching Transistor . 3-43 NPN Silicon High Speed Switching Transistor . 3-43 NPN Silicon High Speed Switching Transistor


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PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
2014 - Not Available

Abstract: No abstract text available
Text: LFP AK 56 D PHPT610035NK NPN / NPN high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN / NPN high power double bipolar transistor in a SOT1205 , NPN / NPN high power double bipolar transistor 5. Pinning information Table 2. Pinning , NXP Semiconductors NPN / NPN high power double bipolar transistor 8. Limiting values Table 5 , Semiconductors NPN / NPN high power double bipolar transistor aaa-014341 4 Ptot (W) 3 (1) 2 1


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PDF PHPT610035NK OT1205 LFPAK56D) PHPT610030NK. PHPT610035PK. PHPT610035NPK. AEC-Q101
K3NC-PB1A

Abstract: RELAY SPDT rising edge EN61010-1 IEC1010-1 K31-L6 omron k31-c2 K3NC-NB1A K3NC-NB2C SU104 su101
Text: -422 K31-FLK3 Yes - BCD output + 5 transistor outputs ( NPN open collector) K31-B4 Yes Yes 4 to 20 mA + 5 transistor outputs ( NPN open collector) K31-L4 Yes Yes 1 to 5 V + 5 transistor outputs ( NPN open collector) K31-L5 Yes Yes 1 mV/10 digits + 5 transistor outputs ( NPN open collector) K31-L6 Yes Yes 0 to 5 VDC + 5 transistor outputs ( NPN open collector) K31-L9 Yes Yes 0 to 10 VDC + 5 transistor outputs ( NPN open collector) K31-L10 Yes Yes


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PDF 50-kHz IEC1010-1) EN61010-1 N089-E1-1A 0698-1M K3NC-PB1A RELAY SPDT rising edge EN61010-1 IEC1010-1 K31-L6 omron k31-c2 K3NC-NB1A K3NC-NB2C SU104 su101
2014 - Not Available

Abstract: No abstract text available
Text: LFP AK 56 D PHPT610030NK NPN / NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN / NPN high power double bipolar transistor in a SOT1205 , NXP Semiconductors NPN / NPN high power double bipolar transistor 5. Pinning information Table 2 , reserved 3 / 15 PHPT610030NK NXP Semiconductors NPN / NPN high power double bipolar transistor , reserved 5 / 15 PHPT610030NK NXP Semiconductors NPN / NPN high power double bipolar transistor


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PDF PHPT610030NK OT1205 LFPAK56D) PHPT610030PK. PHPT610030NPK. AEC-Q101
1999 - Darlington pair IC with 15 Amp

Abstract: disadvantages of capacitor 150 watt amplifier advantages and disadvantages PNP DARLINGTON SINK DRIVER 500ma darlington pair transistor 1A power Junction FET advantages and disadvantages sr004 amplifier advantages and disadvantages linear regulator application
Text: the sum of the VCE for the PNP transistor plus the VBE of each NPN transistor or 2VBE ( NPN ) + VCE(sat , the NPN darlington and PNP transistor composite or ILOAD/b3. The NPN darlington output stage is still , , a PNP transistor occupies more die area to pass the same amount of current as an NPN transistor . Due , power NPN transistor , driven by a PNP transistor . The total dropout voltage is VBE ( NPN ) + VCE(sat)(PNP , structure, the base drive of the NPN pass transistor flows into the load and only the smaller bias current


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2012 - NPN TRANSISTOR SMD MARKING CODE B2

Abstract: DFN2020-6
Text: PBSS4230PAN 14 December 2012 30 V, 2 A NPN / NPN low VCEsat (BISS) transistor Product data sheet 1. General description NPN / NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a , NXP Semiconductors PBSS4230PAN 30 V, 2 A NPN / NPN low VCEsat (BISS) transistor 5. Pinning , Semiconductors PBSS4230PAN 30 V, 2 A NPN / NPN low VCEsat (BISS) transistor Symbol Per device Rth(j-a , NXP Semiconductors PBSS4230PAN 30 V, 2 A NPN / NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W


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PDF PBSS4230PAN DFN2020-6 OT1118) PBSS4230PANP. PBSS5230PAP. AEC-Q101 NPN TRANSISTOR SMD MARKING CODE B2 DFN2020-6
2002 - TRANSISTOR SMD MARKING CODE

Abstract: TRANSISTOR SMD MARKING CODE A1 transistor data cd 100 smd code book B3 transistor MARKING SMD npn TRANSISTOR pulse to sinewave convertor smd transistor marking B3 TRANSISTOR SMD MARKING CODE UA schottky transistor npn PMEM4010PD
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMEM4010ND NPN transistor , specification NPN transistor /Schottky diode module PMEM4010ND PINNING FEATURES · 600 mW total power , : PMEM4010PD. 2002 Oct 28 2 Philips Semiconductors Product specification NPN transistor , System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor VCBO , NPN transistor /Schottky diode module PMEM4010ND CHARACTERISTICS Tamb = 25 °C unless otherwise


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PDF M3D302 PMEM4010ND SCA74 613514/01/pp12 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1 transistor data cd 100 smd code book B3 transistor MARKING SMD npn TRANSISTOR pulse to sinewave convertor smd transistor marking B3 TRANSISTOR SMD MARKING CODE UA schottky transistor npn PMEM4010PD
2010 - Not Available

Abstract: No abstract text available
Text: PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor Rev. 1 - 14 July 2010 Product data sheet , Semiconductors PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor Quick reference data .continued , PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 , Semiconductors PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor 102 Zth(j-a) (K/W) 10 006aac305 , PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor 7. Characteristics Table 8. Characteristics Tamb =


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PDF PBSS4032SPN OT96-1 PBSS4032SPN OT96-1 PBSS4032SN PBSS4032SP
2003 - smd TRANSISTOR code b6

Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 smd diode code B6 TRANSISTOR SMD MARKING CODE smd code marking BM MARKING SMD npn TRANSISTOR R TRANSISTOR SMD MARKING CODE A1 smd TRANSISTOR code marking AV smd TRANSISTOR marking b6 B6 DIODE schottky
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 PMEM4020ND NPN transistor , NPN transistor /Schottky-diode module PMEM4020ND PINNING FEATURES · 600 mW total power , (SOT457) and symbol. DESCRIPTION Combination of an NPN transistor with low VCEsat and high current , 2 VERSION SOT457 Philips Semiconductors Product specification NPN transistor , ). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor VCBO


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PDF M3D302 PMEM4020ND SCA75 R76/01/pp11 smd TRANSISTOR code b6 MOSFET TRANSISTOR SMD MARKING CODE A1 smd diode code B6 TRANSISTOR SMD MARKING CODE smd code marking BM MARKING SMD npn TRANSISTOR R TRANSISTOR SMD MARKING CODE A1 smd TRANSISTOR code marking AV smd TRANSISTOR marking b6 B6 DIODE schottky
2009 - marking code E5 SMD ic

Abstract: smd transistor marking e5 TRANSISTOR SMD CODE PACKAGE SOT363 marking code e5 sot363 MARKING CODE E5 NXP BC846BPN E5 SMD Transistor TRANSISTOR SMD MARKING CODES transistor SMD MARKING CODE MARKING CODE SMD IC
Text: BC846BS 65 V, 100 mA NPN / NPN general-purpose transistor Rev. 01 - 24 August 2009 Product data sheet 1. Product profile 1.1 General description NPN / NPN general-purpose transistor pair in a very , 65 V, 100 mA NPN / NPN general-purpose transistor 006aab619 103 Zth(j-a) (K/W) =1 0.75 , BC846BS NXP Semiconductors 65 V, 100 mA NPN / NPN general-purpose transistor Table 8 , NXP Semiconductors 65 V, 100 mA NPN / NPN general-purpose transistor 11. Soldering 2.65 solder


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PDF BC846BS OT363 SC-88 BC856BS BC846BPN AEC-Q101 BC846BS marking code E5 SMD ic smd transistor marking e5 TRANSISTOR SMD CODE PACKAGE SOT363 marking code e5 sot363 MARKING CODE E5 NXP BC846BPN E5 SMD Transistor TRANSISTOR SMD MARKING CODES transistor SMD MARKING CODE MARKING CODE SMD IC
2013 - Not Available

Abstract: No abstract text available
Text: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN / NPN low VCEsat (BISS) transistor 11 January 2013 , ) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN , product PBSS4130PAN NXP Semiconductors 30 V, 1 A NPN / NPN low VCEsat (BISS) transistor 5 , A NPN / NPN low VCEsat (BISS) transistor 1.5 006aad165 (1) Ptot (W) 1.0 (2) (3) (4) (5 , reserved 4 / 17 PBSS4130PAN NXP Semiconductors 30 V, 1 A NPN / NPN low VCEsat (BISS) transistor


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PDF PBSS4130PAN DFN2020-6 OT1118) PBSS4130PANP. PBSS5130PAP. AEC-Q101
1998 - PNP DARLINGTON SINK DRIVER 500ma

Abstract: 150 watt amplifier advantages and disadvantages power Junction FET advantages and disadvantages Darlington pair IC with 15 Amp disadvantages of capacitor darlington pair transistor 1A npn darlington transistor 150 watts PNP DARLINGTON SINK DRIVER CS8121 LM109
Text: transistor plus the VBE of each NPN transistor or to rise. In response, the voltage at the non inverting , is the load current divided by the gain of the NPN darlington and PNP transistor composite or ILOAD , . The pass device is a single power NPN transistor , driven by a PNP transistor . The total dropout , counterpart. In the composite structure, the base drive of the NPN pass transistor flows into the load and , current as an NPN transistor . Due to the fact that bipolar processes are optimized around the NPN device


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pnp germanium transistor

Abstract: germanium transistors PNP Germanium Transistors
Text: METER SCALES GOOD NPN or PNP Ge or Si , Base or Gate for good transistor or FET’s Readable , leakage limits Does not apply NPN or PNP Ge or Si , Base or Gate for good transistor or FET’s , 520C Specifications Model 520C Industrial Transistor Tester IN-CIRCUIT TEST The B+K Precision model 520C Transistor Tester is designed for in-circuit and out-of circuit transistor testing , devices. ■Front Panel socket for out-of –circuit transistor testing. Model 510A Portable


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2012 - marking code 2R

Abstract: No abstract text available
Text: PBSS4112PAN 29 November 2012 120 V, 1 A NPN / NPN low VCEsat (BISS) transistor Product data , PBSS4112PAN 120 V, 1 A NPN / NPN low VCEsat (BISS) transistor Symbol IBM Ptot Parameter peak base current , 4 / 17 NXP Semiconductors PBSS4112PAN 120 V, 1 A NPN / NPN low VCEsat (BISS) transistor , PBSS4112PAN 120 V, 1 A NPN / NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102 006aad167 duty , Semiconductors PBSS4112PAN 120 V, 1 A NPN / NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102


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PDF PBSS4112PAN DFN2020-6 OT1118) PBSS4112PANP. PBSS5112PAP. AEC-Q101 marking code 2R
2013 - Not Available

Abstract: No abstract text available
Text: DF N2 020 -6 PBSS4160PAN 60 V, 1 A NPN / NPN low VCEsat (BISS) transistor 14 January 2013 , ) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN , product PBSS4160PAN NXP Semiconductors 60 V, 1 A NPN / NPN low VCEsat (BISS) transistor 5 , A NPN / NPN low VCEsat (BISS) transistor 1.5 006aad165 (1) Ptot (W) 1.0 (2) (3) (4) (5 , reserved 4 / 17 PBSS4160PAN NXP Semiconductors 60 V, 1 A NPN / NPN low VCEsat (BISS) transistor


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PDF PBSS4160PAN DFN2020-6 OT1118) PBSS4160PANP. PBSS5160PAP. AEC-Q101
2001 - IC DATE CODE

Abstract: complementary npn-pnp BC847BVN
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC847BVN NPN /PNP general purpose transistor , specification NPN /PNP general purpose transistor FEATURES BC847BVN PINNING · 300 mW total power , 3 2 3 MAM443 Top view NPN /PNP transistor pair in a SOT666 plastic package. MARKING , 07 2 Philips Semiconductors Product specification NPN /PNP general purpose transistor , nA NPN transistor VBE base-emitter turn-on voltage VCE = 5 V; IC = 2 mA Cc collector


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PDF M3D744 BC847BVN SC-75/SC-89 SCA73 613514/02/pp8 IC DATE CODE complementary npn-pnp BC847BVN
k31c2

Abstract: XM2A-2501 XM2A-3701 XM2S-2511 XM2D-0901 EN61010-1 IEC1010-1 K31-L1 K31FLK6 K31-FLK3
Text: - RS-422 K31-FLK3 Yes - BCD output + 5 transistor outputs ( NPN open collector) K31-B4 Yes Yes 4 to 20 mA + 5 transistor outputs ( NPN open collector) K31-L4 Yes Yes 1 to 5 V + 5 transistor outputs ( NPN open collector) K31-L5 Yes Yes 1 mV/10 digits + 5 transistor outputs ( NPN open collector) K31-L6 Yes Yes 0 to 5 VDC + 5 transistor outputs ( NPN open collector) K31-L9 Yes Yes 0 to 10 VDC + 5 transistor outputs ( NPN open collector


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PDF 50-kHz N088-E1-1A 0698-1M k31c2 XM2A-2501 XM2A-3701 XM2S-2511 XM2D-0901 EN61010-1 IEC1010-1 K31-L1 K31FLK6 K31-FLK3
2009 - PBSS2515YPN

Abstract: No abstract text available
Text: Product data sheet 15 V low VCE(sat) NPN /PNP transistor FEATURES PBSS2515YPN QUICK REFERENCE DATA , TR2 DESCRIPTION TR1 NPN /PNP low VCEsat transistor pair in a SC-88 plastic package. 1 2 , Semiconductors Product data sheet 15 V low VCE(sat) NPN /PNP transistor PBSS2515YPN LIMITING VALUES , VCE(sat) NPN /PNP transistor PBSS2515YPN CHARACTERISTICS Tamb = 25 °C unless otherwise , voltage VCE = 2 V; IC = 100 mA; note 1 − − 0.9 V NPN transistor fT transition


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PDF MBD128 PBSS2515YPN SC-70 R75/03/pp11 PBSS2515YPN
2001 - NPN/PNP transistor

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VPN 15 V low VCEsat NPN /PNP transistor , specification 15 V low VCEsat NPN /PNP transistor FEATURES PBSS2515VPN QUICK REFERENCE DATA · 300 mW , turn-on voltage VCE = 2 V; IC = 100 mA; note 1 - - 0.9 V NPN transistor fT , specification 15 V low VCEsat NPN /PNP transistor PBSS2515VPN MLD648 102 handbook, halfpage , 15 V low VCEsat NPN /PNP transistor PBSS2515VPN MLD649 600 MLD651 -1200 VBE


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PDF M3D744 PBSS2515VPN SCA73 613514/02/pp12 NPN/PNP transistor
2008 - transistor marking DG

Abstract: TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor
Text: PUML1/DG 50 V, 200 mA NPN general-purpose transistor / 100 mA NPN resistor-equipped transistor , general-purpose transistor and NPN Resistor-Equipped Transistor (RET) in one SOT363 (SC-88) very small , 50 V, 200 mA NPN general-purpose transistor /100 mA NPN RET 2. Pinning information Table 2 , NPN general-purpose transistor /100 mA NPN RET Table 5. Limiting values .continued In accordance , NXP Semiconductors 50 V, 200 mA NPN general-purpose transistor /100 mA NPN RET 6. Thermal


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PDF OT363 SC-88) AEC-Q101 transistor marking DG TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor
2009 - NXP SMD MARKING CODE ZK

Abstract: npn transistor footprint SC74 marking 345 TRANSISTOR SMD MARKING CODE ce marking code ZK NXP SMD TRANSISTOR MARKING CODE zk smd transistor marking code 24 transistor 102 aec
Text: BC846DS 65 V, 100 mA NPN / NPN general-purpose transistor Rev. 01 - 17 July 2009 Product data sheet 1. Product profile 1.1 General description NPN / NPN general-purpose transistor pair in a small , Semiconductors BC846DS 65 V, 100 mA NPN / NPN general-purpose transistor 2. Pinning information Table 2 , of 12 NXP Semiconductors BC846DS 65 V, 100 mA NPN / NPN general-purpose transistor Table 5 , of 12 NXP Semiconductors BC846DS 65 V, 100 mA NPN / NPN general-purpose transistor Table 7


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PDF BC846DS OT457 SC-74) AEC-Q101 BC846DS 771-BC846DS115 NXP SMD MARKING CODE ZK npn transistor footprint SC74 marking 345 TRANSISTOR SMD MARKING CODE ce marking code ZK NXP SMD TRANSISTOR MARKING CODE zk smd transistor marking code 24 transistor 102 aec
2007 - 4350SS

Abstract: 4350S PBSS4350SPN PBSS4350SS PBSS5350SS
Text: PBSS4350SS 50 V, 2.7 A NPN / NPN low VCEsat (BISS) transistor Rev. 01 - 3 April 2007 Product , ] PBSS4350SS NXP Semiconductors 50 V, 2.7 A NPN / NPN low VCEsat (BISS) transistor 2. Pinning , NXP Semiconductors 50 V, 2.7 A NPN / NPN low VCEsat (BISS) transistor Table 6. Limiting values , NXP Semiconductors 50 V, 2.7 A NPN / NPN low VCEsat (BISS) transistor 6. Thermal characteristics , 50 V, 2.7 A NPN / NPN low VCEsat (BISS) transistor 006aaa810 103 duty cycle = Zth(j-a) (K/W


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PDF PBSS4350SS OT96-1 PBSS4350SPN PBSS5350SS PBSS4350SS 4350SS 4350S PBSS4350SPN PBSS5350SS
2012 - npn transistor footprint

Abstract: No abstract text available
Text: PBSS4260PAN 12 December 2012 60 V, 2 A NPN / NPN low VCEsat (BISS) transistor Product data sheet 1. General description NPN / NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a , product NXP Semiconductors PBSS4260PAN 60 V, 2 A NPN / NPN low VCEsat (BISS) transistor 5 , Semiconductors PBSS4260PAN 60 V, 2 A NPN / NPN low VCEsat (BISS) transistor Symbol Per device Rth(j-a , NXP Semiconductors PBSS4260PAN 60 V, 2 A NPN / NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W


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PDF PBSS4260PAN DFN2020-6 OT1118) PBSS4260PANP. PBSS5260PAP. AEC-Q101 npn transistor footprint
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